WO2012145872A1 - 防止积留水液的热氧化系统和方法 - Google Patents

防止积留水液的热氧化系统和方法 Download PDF

Info

Publication number
WO2012145872A1
WO2012145872A1 PCT/CN2011/001316 CN2011001316W WO2012145872A1 WO 2012145872 A1 WO2012145872 A1 WO 2012145872A1 CN 2011001316 W CN2011001316 W CN 2011001316W WO 2012145872 A1 WO2012145872 A1 WO 2012145872A1
Authority
WO
WIPO (PCT)
Prior art keywords
thermal oxidation
carrier gas
water vapor
raw material
oxidation system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2011/001316
Other languages
English (en)
French (fr)
Inventor
李春龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to US13/380,930 priority Critical patent/US20120269710A1/en
Publication of WO2012145872A1 publication Critical patent/WO2012145872A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Definitions

  • the present invention relates to a method of fabricating a semiconductor device, and more particularly to a thermal oxidation system and method for preventing accumulation of water in a reaction system for heating a semiconductor process.
  • Insulating materials having good insulating properties and chemical stability are generally required in semiconductor devices and corresponding processes, particularly electrical insulating materials which can be tightly bonded to a substrate such as silicon and have few interface defects. Due to the above-mentioned good properties, silicon dioxide is widely used in gate oxide layers, device protective layers, electrical isolation layers, etch stop layers, anti-diffusion layers, liner layers, interlayer insulating layers, and dielectric dielectric films of MOSFETs.
  • SiO 2 there are many methods for preparing SiO 2 , including thermal decomposition deposition, sputtering, vacuum evaporation, anodization, CVD, thermal oxidation, etc., wherein the SiO 2 prepared by thermal oxidation has high repeatability and chemical stability, It can reduce the dangling bonds on the silicon surface, so that the surface state density is reduced and the interface trap and fixed charge can be well controlled, thus becoming the main technical means or process for preparing Si0 2 .
  • the thermal oxidation method for preparing Si0 2 is to use a silicon and an oxygen-containing oxidant to chemically react at a high temperature to form silicon oxide.
  • the thermal oxidation method using pure oxygen 0 2 is called dry oxygen oxidation, and the product structure is dense, dry, uniform and reproducible, and generally a high quality silicon oxide film is basically used in this process.
  • the dry oxygen oxidation growth rate is slow, and it is also applicable to a thin gate oxide layer, but it is uneconomical for a thick interlayer oxide layer or separator.
  • the method for preparing thick film SiO 2 is wet oxidation, as shown in Fig. 1A, which is an existing oxidation system for preparing SiO 2 by wet oxidation.
  • the reaction furnace 1 has an intake port 2 for a reaction gas (others such as a furnace door, a furnace heating device, and the like are not shown), and the intake port 2 and the water vapor generation chamber 5 pass.
  • the pipe 3 is connected, and the pipe 3 is also connected to the inlet pipe 6 of the planting or dilution gas through the three-way valve 4 thereon, and the intake pipe 6 is connected to an external gas tank or an external line (not shown) for conveying
  • the inert gas of N 2 or Ar, the water vapor generating chamber 5 is connected to the intake duct 7 of the raw material gas, wherein the intake duct 7 has a header 8 for inputting pure 0 2 from an external gas tank or an external line (not shown), respectively.
  • the pure H 2 the intake duct 7 is also coupled (connected, surrounded or placed in the vicinity) with a heater 9, and the heater 9 is a non-combustion heater such as a resistive type or a solenoid type.
  • the pressure of the water vapor H 2 0 as an oxidant can be adjusted by the pressure, flow rate, and the like of the input pure oxygen and pure hydrogen, and in addition, the presence of an inert gas such as N 2 as a carrier gas can also be slowed down.
  • the rate of reaction of the silicon oxide thus controls the quality of the film.
  • the carrier gas is typically loaded using commercially available gas cylinders or transfer lines.
  • the temperature of the carrier gas is typically the same or similar to room temperature, about 23 °C.
  • the low temperature carrier gas and the high temperature water vapor meet at the valve 4 and share a section of the pipeline 3 until it enters the reaction furnace 1, at which time a part of the high temperature water vapor condenses into liquid water under the cooling of the low temperature carrier gas.
  • Fig. 1B is a partial enlarged view of Fig. 1A, wherein the shaded portion represents liquid water. The water vapor condenses before entering the furnace tube cavity, causing a reduction in the amount of water vapor in the main oxidation step.
  • the existing thermal oxidation system has the above drawbacks, and it is necessary to improve the thermal oxidation system to avoid accumulation of liquid water in the reaction system. Summary of the invention
  • the invention provides a thermal oxidation system, comprising: a reaction furnace for preparing a silicon oxide by wet oxidation; a water vapor generation chamber, wherein a raw material gas reacts to generate water vapor in the water vapor generation chamber, and is transported into the reaction furnace through a pipeline; a gas intake duct for supplying the raw material gas to the water vapor generating chamber; a carrier gas intake duct for supplying the carrier gas to the reaction furnace; and a heater coupled to the raw material gas intake duct And heating the raw material gas to cause it to react to form water vapor; and characterized by further comprising a heating device coupled to the carrier gas inlet conduit.
  • the invention also provides a thermal oxidation method for preparing a silicon oxide by wet oxidation, comprising: conveying a carrier gas into a reaction furnace; conveying a heated raw material gas to a water vapor generation chamber to generate high temperature water vapor; heating the load Gas; the raw material gas and the carrier gas are simultaneously delivered into the reaction furnace.
  • the raw material gases are oxygen and hydrogen.
  • the heater heats the raw material gas to 700 °C.
  • the heating device is the heater.
  • the heating device is a heat exchange mechanism formed by the raw material gas intake pipe and the carrier gas intake pipe.
  • the heater is a non-combustion heater.
  • the carrier gas is nitrogen.
  • the heating device heats the carrier gas to above 100 °C.
  • Figure 1A is a schematic view of a prior art thermal oxidation system
  • Figure 1B is a partial enlarged view of a prior art thermal oxidation system
  • FIG. 2A is a schematic illustration of a thermal oxidation system in accordance with the present invention
  • Figure 2B is a partial enlarged view of a thermal oxidation system in accordance with the present invention. detailed description
  • FIG. 2A A thermal oxidation system for the preparation of SiO 2 by wet oxidation in accordance with the present invention is shown in Figure 2A.
  • the reaction furnace 1 has an intake port 2 for a reaction gas (others such as a furnace door, a furnace heating device, and the like are not shown), and the intake port 2 is connected to the water vapor generation chamber 5 through a pipe 3 through which the pipe 3 is also passed, for example
  • the valve 4 of the three-way valve is connected to an intake duct 6 of a carrier gas or a diluent gas, and the intake duct 6 is connected to an external gas tank or an external line (not shown) for transporting an inert gas, usually N 2 or Ar.
  • the water vapor generating chamber 5 is connected to the intake duct 7 of the material gas, wherein the intake duct 7 has a header 8 for inputting pure 0 2 and pure H 2 from an external gas tank or an external line (not shown), respectively, and the intake duct 7 Also coupled (connected, enclosed or placed in the vicinity) with a heater 9, heater 9 (using a non-combustion heater such as a resistive or electromagnetic coil type) is heated outside the intake duct 7 to about 700 ° C, so that The high temperature pure 0 2 and pure H 2 chemically react in the water vapor generating chamber 5 to generate water vapor, and the generated water vapor is pushed into the reaction furnace 1 through the pipeline 3 under the push and introduction of the inert gas in the carrier gas inlet duct 6 in the reactor 1 the reaction of water vapor H 2 0 Si wafer with a Si0 2 generated H 2 (Si + H 2 0-- > Si0 2 + H 2).
  • the pressure of the water vapor H 2 0 as an oxidant can be adjusted by the pressure, flow rate, and the like of the input pure oxygen and pure hydrogen, and in addition, the presence of an inert gas such as N 2 as a carrier gas can also be slowed down.
  • the rate of reaction of the silicon oxide thus controls the quality of the film.
  • the heater 9 is not only thermally coupled to the intake duct 7 of the source gas, but also thermally coupled to the planting gas or
  • the intake duct 6 of the dilution gas that is, the heater 9 is inside the duct outside the intake duct 6
  • the pure oxygen as the raw material gas, the pure hydrogen, and the inert gas as the carrier gas are simultaneously heated to ensure that the carrier gas does not cool the raw material gas at the pipe 3 to form liquid water.
  • the heater 9 is heated to about 100 ° C above the intake conduit 6, i.e., heated above the boiling point of the water to ensure that liquid water is not retained.
  • the temperature at which the carrier gas is heated may be, for example, 60, 70, 80, 95 ° C or the like as long as the cooling effect of the carrier gas on the raw material gas is insufficient to cause the liquid water to remain in the pipe 3.
  • the distribution of the heater 9 between the intake ducts 6 and 7 is determined in accordance with the intake duct layout and the heating needs, for example, the heater 9 is closer to the intake duct 7 to provide more heat to ensure the water vapor generation reaction, and the distance from the intake air.
  • the duct 6 is far away.
  • the intake duct 6 can be surrounded around the heater 9, and waste heat and heat radiation are used to heat the inert gas as a carrier gas to make full use of the heat energy.
  • the intake duct 6 may be heated by other heating means or heating means.
  • the intake duct 6 is separately heated to more than 100° using a separate second heater (not shown). It is also possible to use only one heater 9, to surround the intake duct 6 by forming the intake duct 7, or to The gas duct 6 passes through or surrounds the water vapor generating chamber 5 in such a manner that it is heated to use a water vapor of about 700 ° C to heat the carrier gas to over 100 ° C, so that thermal energy can be fully utilized.
  • thermal coupling is not completely limited to the direct contact between the heater or the heating device and the component to be heated, but also the way to transfer heat energy by heat exchange or heat radiation at a certain distance. Or it may also include applying high frequency electromagnetic waves to the heating member to cause eddy current heating for indirect heating.
  • FIG. 2B is a partially enlarged schematic view of the pipe 3 from the valve 4 to the intake port 2 of the reaction furnace 1, wherein, unlike the prior art shown in FIG. 1B, due to the extra for the intake duct 6.
  • the pipe 3 When heated, no liquid water is accumulated in the pipe 3, and the problem that the liquid water is carried into the reaction furnace by the planting gas causes the pollution to no longer occur.
  • the hydrogen generated after the chemical reaction in the reaction furnace 1 can be reused, for example, the hydrogen in the reaction furnace 1 is extracted, purified and dried, and replenished to the header 8 to realize the reuse of pure hydrogen, thereby saving costs.
  • the structure of the thermal oxidation system in accordance with the present invention has been described above.
  • the method of using the above thermal oxidation system is specifically as follows. First, an inert gas such as nitrogen, argon, helium, or the like is supplied to the reaction furnace 1 through the carrier gas intake pipe 6, the valve 4, the pipe 3, and the intake port 2 in order to control and maintain the inside of the reaction furnace 1. Air pressure.
  • an inert gas such as nitrogen, argon, helium, or the like is supplied to the reaction furnace 1 through the carrier gas intake pipe 6, the valve 4, the pipe 3, and the intake port 2 in order to control and maintain the inside of the reaction furnace 1. Air pressure.
  • the heater 9 is turned on to heat the material gas including the pure oxygen and the pure hydrogen passing through the header 8 and the raw material gas inlet pipe 7 to a high temperature, for example, about 700 °C.
  • the inert gas in the carrier gas inlet pipe 6 is heated by the heater 9 or the other heating mechanism described above so that the temperature of the inert gas exceeds the boiling point of water, that is, exceeds 100 °C.
  • the material gas is sent into the water vapor generation chamber 5, and the reaction generates high temperature water vapor.
  • the valve 4 is opened, and the raw material gas and the carrier gas are sent to the reaction furnace, and the raw material gas is reacted with silicon on the wafer in the reaction furnace to thermally oxidize to form a silicon dioxide film.
  • the thermal oxidation system and method of the present invention since the carrier gas is heated, liquid water is prevented from remaining in the intake duct, thereby preventing liquid water from being carried into the reactor, controlling the quality of the film growth, and improving the semiconductor. Device reliability.

Landscapes

  • Formation Of Insulating Films (AREA)

Description

防止积留水液的热氧化系统和方法 本申请要求了 2011年 4月 25日提交的、申请号为 201110109430.3、 发明名称为"防止积留水液的热氧化系统和方法"的中国专利申请的优 先权， 其全部内容通过引用结合在本申请中。 技术领域
本发明涉及一种半导体器件制造方法， 特别是涉及一种防止在半 导体工艺加热用反应系统内积留水液的热氧化系统和方法。
背景技术
半导体器件以及相应工艺中通常需要使用绝缘性质良好且具备化 学稳定性的绝缘材料， 特别是能与例如硅的衬底紧密结合且界面缺陷 少的电绝缘材料。 二氧化硅由于具有上述良好性质， 被广泛应用在 MOSFETs的栅氧化层、 器件保护层、 电隔离层、 蚀刻停止层、 防扩散 层、 衬垫层、 层间绝缘层和电容介质膜等等。
制备 Si02的方法有很多， 包括热分解淀积、 溅射、 真空蒸发、 阳 极氧化、 CVD、 热氧化法等等， 其中热氧化法制备的 Si02具有很高的 重复性和化学稳定性、 能降低硅表面悬挂键从而使得表面态密度减小 并且还能很好控制界面陷阱和固定电荷，因此成为制备 Si02的主要技术 手段或工艺。
热氧化法制备 Si02是利用硅与含氧元素的氧化剂在高温下化学反 应生成氧化硅。 使用纯氧气 02的热氧化法被称为干氧氧化， 产品结构 致密、 干燥、 均勾性和重复性好， 通常高质量的氧化硅薄膜基本使用 这种工艺。 但是干氧氧化生长速率慢， 对于薄层的栅氧化层还能适用， 但是对于较厚的层间氧化层或隔离膜就显得不经济实用了。
目前制备厚膜 Si02的方法是采用湿法氧化， 如图 1 A所示为现有的 湿法氧化制备 Si02的氧化系统。反应炉 1具有反应气体的进气口 2 (其他 例如炉门、 炉体加热装置等均未显示） ， 进气口 2与水汽产生室 5通过 管道 3相连， 管道 3还通过其上的三通阀 4与栽气或稀释气的进气管道 6 相连， 进气管道 6连接外部储气罐或外部管线（未示出） 以用于输送通 常为 N2或 Ar的惰性气体， 水汽产生室 5连接原料气体的进气管道 7， 其 中进气管道 7具有集管 8以从外部储气罐或外部管线 （未示出） 分别输 入纯 02和纯 H2, 进气管道 7上还耦合（连接、 包围或设置在附近）有加 热器 9, 加热器 9采用电阻式、 电磁线圈式等非燃烧式加热器。 在进气 管道 7外部进行加热到约 700 °C，使得高温的纯 02和纯 H2在水汽产生室 5 内化学反应产生水汽， 所产生的水汽在载气进气管道 6中惰性气体的推 动和带入下通过管道 3进入反应炉 1中， 在反应炉 1中水汽 H20与晶片中 的 Si反应生成 Si02和 H2 ( Si+H20—— >Si02+H2 ) 。 这种氧化系统中， 作为氧化剂的水汽 H20的压力可以由输入的纯氧和纯氢的压力、流速等 等来调节， 此外， 作为载气的惰性气体例如 N2的存在也能减緩氧化硅 反应速度从而控制薄膜质量。
但是， 载气通常是使用商业购买的气罐或输送管线来载入的， 载 气的温度通常与室温相同或相近， 约 23 °C。 在整个氧化系统工作过程 中， 低温的载气与高温的水汽在阀门 4相遇并共用一段管道 3直至进去 反应炉 1中， 此时一部分高温的水汽在低温载气的冷却下会凝结成液体 水， 聚集在阀门 4至进气口 2之间， 如图 1B所示为图 1A的局部放大图， 其中阴影部分代表液态水。 水蒸汽在进入炉管腔体之前凝结， 造成主 氧化步骤的水汽量减少。 相当于减少了菜单（Recipe )中 H2和 02的气体 流量。这势必改变了薄膜盾量和厚度，这对热氧化 Si02要求非常高的半 导体行业而言， 是不愿意发生的。 此外， 液态水长期聚集在阀门 4到进 气口 2的管道 3部分， 会造成管道 3的腐蚀， 腐蚀穿孔之后外部空气或杂 质进入管道并带入反应炉内， 污染炉内环境， 造成晶片质量严重下降， 甚至是全部产品报废。
总而言之， 现有的热氧化系统存在上述缺陷， 需要改进热氧化系 统以避免反应系统内积聚液态水。 发明内容
由上所述，本发明的目的在于提供一种改进热氧化系统及其方法， 以避免反应炉内积聚液态水。
本发明提供了一种热氧化系统， 包括： 反应炉， 用于湿法氧化制 备氧化硅； 水汽产生室， 原料气体在所述水汽产生室内反应生成水汽， 通过管道输送进入所述反应炉； 原料气体进气管道， 用于向所述水汽 产生室提供所述原料气体； 载气进气管道， 用于向所述反应炉提供所 述载气； 加热器， 耦合至所述原料气体进气管道， 用于加热所述原料 气体以促使其反应生成水汽； 其特征在于， 还包括加热装置， 耦合至 所述载气进气管道。
本发明还提供了一种热氧化方法， 用于湿法氧化制备氧化硅， 包 括： 向反应炉内输送载气； 向水汽产生室输送经过加热的原料气体， 反应生成高温水汽； 加热所述载气； 向所述反应炉内同时输送所述原 料气体和所述载气。
其中， 所述原料气体为氧气和氢气。 其中， 所述加热器将所述原 料气体加热至 700°C。 其中， 所述加热装置为所述加热器。 其中， 所述 加热装置为所述原料气体进气管道与所述载气进气管道构成的热交换 机制。 其中， 所述加热器为非燃烧式加热器。 其中， 所述载气为氮气。 其中， 所述加热装置将所述载气加热至 100°C以上。
依照本发明的热氧化系统以及方法， 由于对载气进行了加热， 避 免了液态水存留在进气管道中， 进而防止了液态水被带入反应炉内， 控制了薄膜生长质量， 提高了半导体器件的可靠性。 附图说明
以下参照附图来详细说明本发明的技术方案， 其中：
图 1A为现有的热氧化系统的示意图；
图 1 B为现有的热氧化系统的局部放大图；
图 2A为依照本发明的热氧化系统的示意图； 以及 图 2 B为依照本发明的热氧化系统的局部放大图。 具体实施方式
以下参照附图并结合示意性的实施例来详细说明本发明技术方案 的特征及其技术效果， 公开了改进热氧化系统及其方法， 以避免反应 炉内积聚液态水。 需要指出的是， 类似的附图标记表示类似的结构， 本申请中所用的术语 "第一" 、 "第二，， 、 "上" 、 "下" 等等可用 于修饰各种系统构件和制造工序。 这些修饰除非特别说明并非暗示所 修饰系统构件和制造工序的空间、 次序或层级关系。
如图 2 A所示为依照本发明的湿法氧化制备 Si02的热氧化系统。 反 应炉 1具有反应气体的进气口 2 (其他例如炉门、 炉体加热装置等均未 显示） ， 进气口 2与水汽产生室 5通过管道 3相连， 管道 3还通过其上的 例如为三通阀的阀门 4与载气或稀释气的进气管道 6相连， 进气管道 6连 接外部储气罐或外部管线 （未示出） 以用于输送通常为 N2或 Ar的惰性 气体， 水汽产生室 5连接原料气体的进气管道 7， 其中进气管道 7具有集 管 8以从外部储气罐或外部管线（未示出）分别输入纯 02和纯 H2, 进气 管道 7上还耦合（连接、 包围或设置在附近）有加热器 9， 加热器 9 (采 用电阻式、 电磁线圈式等非燃烧式加热器）在进气管道 7外部进行加热 到约 700 °C , 使得高温的纯 02和纯 H2在水汽产生室 5内化学反应产生水 汽， 所产生的水汽在载气进气管道 6中惰性气体的推动和带入下通过管 道 3进入反应炉 1中， 在反应炉 1中水汽 H20与晶片中的 Si反应生成 Si02 和 H2 ( Si+H20—— >Si02+H2 ) 。 这种氧化系统中， 作为氧化剂的水汽 H20的压力可以由输入的纯氧和纯氢的压力、 流速等等来调节， 此外， 作为载气的惰性气体例如 N2的存在也能减緩氧化硅反应速度从而控制 薄膜质量。
与图 1 A所示系统不同的是， 图 2 A所示的依照本发明的热氧化系统 中， 加热器 9不仅仅热耦合至原料气体的进气管道 7, 还同时热耦合到 栽气或稀释气体的进气管道 6， 也即加热器 9在进气管道 6外部对管道内 作为原料气的纯氧、 纯氢以及作为载气的惰性气体同时加热， 确保载 气不会在管道 3处冷却原料气以形成液态水。 优选地， 加热器 9对于进 气管道 6加热至约 100°C以上， 也即加热至水沸点以上， 确保不会存留 液态水。 除此之外， 加热载气的温度也可以是例如 60、 70、 80、 95 °C 等， 只要使得载气对于原料气的冷却效果不足以使得液态水残留在管 道 3中。 加热器 9在进气管道 6和 7之间的分布依照进气管道布局以及加 热需要而确定， 例如加热器 9距离进气管道 7较近以提供较多热量确保 水汽生成反应， 而距离进气管道 6较远， 特别地， 进气管道 6可以环绕 在加热器 9周围， 利用余热、 热辐射来加热作为载气的惰性气体， 以充 分利用热能。
此外， 也可以采用其他加热装置或加热方法对进气管道 6进行加 热。 例如， 采用分离的第二加热器（未示出）对进气管道 6单独加热至 超过 100° ( 。 也可以仅用一个加热器 9， 通过形成进气管道 7环绕进气管 道 6、 或者进气管道 6穿过或环绕水汽产生室 5这样构成的热交换机制， 以利用约 700°C的水汽来加热载气至超过 100°C， 如此可充分利用热能。
以上所述的 "热耦合" 所指代的意义并非完全限于加热器或加热 装置与待加热的部件之间的直接接触， 也包括相距一定距离而以热交 换或热辐射方式来输送热能的方式， 或者还可包括对待加热部件施加 高频电磁波使其发生涡流发热以间接加热。
图 2B显示的是从阀门 4至反应炉 1的进气口 2之间的管道 3的局部放 大示意图， 其中， 与图 1B所示的现有技术不同的是， 由于对于进气管 道 6的额外加热， 管道 3内不再积存液态水， 液态水被栽气带入反应炉 中导致污染的问题不再出现。
此外， 还可以重复利用反应炉 1内发生化学反应过后产生的氢气， 例如将反应炉 1内的氢气抽出， 经过提纯和干燥， 重新补充至集管 8， 以实现纯氢的重复利用， 节省成本。
以上描述了依照本发明的热氧化系统的结构。 使用上述热氧化系 统的方法具体如下。 首先， 依次通过载气进气管道 6、 阀门 4、 管道 3、 进气口 2向反应 炉 1内输送惰性气体， 例如氮气、 氩气、 氦气等等， 用于控制和保持反 应炉 1内气压。
其次， 开启加热器 9 , 对通过集管 8、 原料气进气管道 7的包括纯氧 和纯氢的原料气体进行加热至高温， 例如约 700°C。 与此同时， 通过加 热器 9或上述其他加热机制对于载气进气管道 6内的惰性气体一同加 热， 使得惰性气体温度超过水沸点， 也即超过 100°C。
然后， 将原料气体送入水汽产生室 5内， 反应生成高温水汽。 接着， 开启阀门 4, 同时将原料气体和载气送至反应炉内， 原料气 与反应炉内晶片上的硅反应， 热氧化生成二氧化硅薄膜。
依照本发明的热氧化系统以及方法， 由于对载气进行了加热， 避 免了液态水存留在进气管道中， 进而防止了液态水被带入反应炉内， 控制了薄膜生长质量， 提高了半导体器件的可靠性。
尽管已参照一个或多个示例性实施例说明本发明， 本领域技术人 员可以知晓无需脱离本发明范围而对加热系统或方法做出各种合适的 改变和等价方式。 此外， 由所公开的教导可做出许多可能适于特定情 形或材料的修改而不脱离本发明范围。 因此， 本发明的目的不在于限 定在作为用于实现本发明的最佳实施方式而公开的特定实施例， 而所 公开的加热系统或方法将包括落入本发明范围内的所有实施例。

Claims

权 利 要 求
1. 一种热氧化系统， 包括：
反应炉， 用于湿法氧化制备氧化硅；
水汽产生室， 原料气体在所述水汽产生室内反应生成水汽， 通过 管道输送进入所述反应炉；
原料气体进气管道， 用于向所述水汽产生室提供所述原料气体； 载气进气管道， 用于向所述反应炉提供所述载气；
加热器， 耦合至所述原料气体进气管道， 用于加热所述原料气体 以促使其反应生成水汽；
其特征在于， 还包括加热装置， 耦合至所述载气进气管道。
2. 如权利要求 1所述的热氧化系统， 其中， 所述原料气体为氧气 和氢气。
3. 如权利要求 1所述的热氧化系统， 其中， 所述加热器将所述原 料气体加热至 700 °C。
4. 如权利要求 1所述的热氧化系统， 其中， 所述加热装置为所述 加热器。
5. 如权利要求 1所述的热氧化系统， 其中， 所述加热装置为所述 原料气体进气管道与所述载气进气管道构成的热交换机制。
6. 如权利要求 1所述的热氧化系统， 其中， 所述加热器为非燃烧 式加热器。
7. 如权利要求 1所述的热氧化系统， 其中， 所述载气为氮气。
8. 如权利要求 1所述的热氧化系统， 其中， 所述加热装置将所述 载气加热至 10CTC以上。
9. 一种热氧化方法， 用于湿法氧化制备氧化硅， 包括：
向反应炉内输送载气；
向水汽产生室输送经过加热的原料气体， 反应生成高温水汽； 加热所述载气； 向所述反应炉内同时输送所述原料气体和所述载气。
10. 如权利要求 9所述的方法， 其中， 加热所述载气至 100°C以上。
PCT/CN2011/001316 2011-04-25 2011-08-09 防止积留水液的热氧化系统和方法 Ceased WO2012145872A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/380,930 US20120269710A1 (en) 2011-04-25 2011-08-09 Thermal oxidation system and method for preventing water from accumulation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110109430.3A CN102760640B (zh) 2011-04-25 2011-04-25 防止积留水液的热氧化系统和方法
CN201110109430.3 2011-04-25

Publications (1)

Publication Number Publication Date
WO2012145872A1 true WO2012145872A1 (zh) 2012-11-01

Family

ID=47055048

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2011/001316 Ceased WO2012145872A1 (zh) 2011-04-25 2011-08-09 防止积留水液的热氧化系统和方法

Country Status (2)

Country Link
CN (1) CN102760640B (zh)
WO (1) WO2012145872A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114182354A (zh) * 2021-11-08 2022-03-15 深圳市捷佳伟创新能源装备股份有限公司 反应室气体增湿装置及扩散设备

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109193340B (zh) * 2018-08-22 2019-06-28 深亮智能技术（中山）有限公司 一种垂直腔面发射激光器的湿法氧化工艺及装置
CN115193277A (zh) * 2022-06-17 2022-10-18 深圳市德明利光电有限公司 一种用于氧化制程的气体混合装置及处理设备
CN119890069A (zh) * 2023-10-24 2025-04-25 北京北方华创微电子装备有限公司 半导体工艺设备的点火腔室、半导体工艺设备和控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010049080A1 (en) * 2000-05-31 2001-12-06 Takanobu Asano Heat treatment system and method
CN2663439Y (zh) * 2002-08-13 2004-12-15 台湾积体电路制造股份有限公司 改善薄氧化层均一性的炉管装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6255231B1 (en) * 1998-10-02 2001-07-03 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a gate oxide layer
CN100511602C (zh) * 2006-09-20 2009-07-08 大日本网目版制造株式会社 基板处理装置
CN101523593B (zh) * 2006-09-29 2012-05-23 瑞萨电子株式会社 半导体装置制造方法以及半导体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010049080A1 (en) * 2000-05-31 2001-12-06 Takanobu Asano Heat treatment system and method
CN2663439Y (zh) * 2002-08-13 2004-12-15 台湾积体电路制造股份有限公司 改善薄氧化层均一性的炉管装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114182354A (zh) * 2021-11-08 2022-03-15 深圳市捷佳伟创新能源装备股份有限公司 反应室气体增湿装置及扩散设备

Also Published As

Publication number Publication date
CN102760640B (zh) 2015-06-17
CN102760640A (zh) 2012-10-31

Similar Documents

Publication Publication Date Title
TW480245B (en) Method of annealing large area glass substrates
CN104520975B (zh) 衬底处理装置及半导体器件的制造方法
US10943806B2 (en) Substrate processing apparatus, method of manufacturing semiconductor device, and non- transitory computer-readable recording medium
JP6944990B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
JP7011033B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
JP2009536459A5 (zh)
US6221791B1 (en) Apparatus and method for oxidizing silicon substrates
JP5542560B2 (ja) 半導体製造装置およびサセプタのクリーニング方法
CN103320762A (zh) 碳化硅的成膜装置及成膜方法
WO2007010887A1 (ja) ガス処理装置
CN107924825A (zh) 半导体器件的制造方法、衬底处理装置及程序
CN102760640B (zh) 防止积留水液的热氧化系统和方法
WO1991013461A1 (fr) Procede de traitement de surface de substrats de semi-conducteurs et dispositif s'y rapportant
TW201843733A (zh) 蝕刻方法及蝕刻裝置
CN100437937C (zh) 金属硅酸盐膜的成膜方法及其装置、半导体装置的制造方法
WO2020184284A1 (ja) 成膜方法および成膜装置
CN109244010A (zh) 一种高温热氧化机台结构
TW201133560A (en) Method of manufacturing semiconductor device and substrate processing apparatus
JP2010212335A (ja) 基板処理装置
US20120269710A1 (en) Thermal oxidation system and method for preventing water from accumulation
CN118280912A (zh) 形成间隙填充材料的方法及相关装置和结构
CN100543935C (zh) 成膜和清洁方法
CN110408911B (zh) 一种大面积薄膜的可控制备装置及方法
WO2019053805A1 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
JPH0521867Y2 (zh)

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 13380930

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11864539

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11864539

Country of ref document: EP

Kind code of ref document: A1