WO2012143262A1

WO2012143262A1 - Device and method for large-scale deposition of semi-conductor layers with gas-separated hcl-feeding

Info

Publication number: WO2012143262A1
Application number: PCT/EP2012/056457
Authority: WO
Inventors: Daniel Brien; Martin Dauelsberg; Gerhard Karl Strauch; Dirk Fahle
Original assignee: Aixtron Se
Priority date: 2011-04-18
Filing date: 2012-04-10
Publication date: 2012-10-26
Also published as: DE102011002145B4; TW201248695A; DE102011002145A1

Abstract

The invention relates to a device and method for depositing II-VI- or III-V-semi-conductor layers on one or more substrates (4). Said device comprises a reactor housing, a treatment chamber (1), a susceptor (2) which is arranged in the treatment chamber (1) and which receives the substrate (4), a heating device (18) for heating the susceptors (2), a gas inlet element (7) for introducing, into the treatment chamber (1), treatment gases in the form of a hybrid, an organometallic component and a halogen component. Treatment gases which form adducts in the absence of the halogen components in the adduct forming area (M) in which the gas temperature (TB) is in an adduct formation temperature range are used. The halogen component is introduced into the treatment chamber (1) separately from the V- or VI-components, in particular from the hybrid in the treatment chamber (1) such that the V- or VI-components, in particular the hybrid, first comes into contact with the halogen components in the adduct formation area.

Description

Device and method for the large-area deposition of semiconductor layers with gas-separated HCl feed

The invention relates to a device for depositing II-VI or III-V semiconductor layers on one or more substrates, comprising a reactor housing having a process chamber arranged in the reactor housing, a susceptor arranged in the process chamber for receiving the substrate, a heating device for heating the susceptor a Suszeptortempe- temperature, a gas inlet member, which is associated with the process chamber to optionally together with in each case a carrier gas process gases in the form of a V or VI component, in particular a hydride, an organometallic II or III component and a halogen component in to introduce the process chamber, and a gas outlet device for the exit of reaction products and possibly the carrier gas from the process chamber, with a gas mixing / supply device comprising a source of the organometallic II or II component, a source for the V or VI Component, in particular the hydride and a source for the halogen component, wherein the sources via supply lines, the control valves and mass flow controller, are connected to the gas inlet member to the organometallic component, the V or VI component, in particular the hydride and the halogen component in separate gas flows optionally together with the Carrier gas to bring into the heated process chamber, wherein in successive process steps by means of a control valves controlling the valves and the mass flow controller process gases are fed in a different composition in the process chamber.

The invention further relates to a method for depositing II-VI or III-V layers on one or more substrates, wherein process gases in Form of an organometallic II or III component, a V or VI component, in particular a hydride and a halogen component in a gas mixing / supply means are provided, the at least one substrate is applied to a susceptor in a process chamber, the susceptor and at least a process chamber wall are heated to a susceptible or wall temperature, the process gases are optionally introduced together with a carrier gas in separate gas flows by means of a gas inlet member into the process chamber, where the organometallic component and the V or VI component, in particular the hydride pyrolytically react with each other at the substrate surface, so that a layer is deposited on the substrate, and the halogen component reduces or suppresses parasitic particle formation in the gas phase and the carrier gas, together with reaction products, leaves the process chamber through a gas outlet device et, wherein in successive process steps by means of a control valves and mass flow controller controlling process gases are fed into the process chamber in different composition.

Such a device or such a method describes the US 7,585,769 B2. Described there is a device or a method for depositing III-V semiconductor layers on a substrate in a reactor housing. The process gases introduced into the process chamber of the reactor housing contain a hydride, for example ammonia, an organometallic component, for example trimethylgallium, and a halogen component, for example hydrogen chloride. The apparatus has a showerhead type gas inlet member disposed vertically above a susceptor which extends horizontally and carries a substrate which is heated to a process temperature using heaters. The halogen component should either be introduced together with the other process gases or separately into the process chamber and there should prevent or suppress the formation of particles in the gas phase. DE 10 2007 009 145 A1 describes an apparatus for depositing crystalline layers by means of the MOCVD method in which different process gases are introduced into the process chamber by means of three gas inlet zones arranged one above the other. NH3 is introduced through a gas inlet zone adjoining the susceptor, an organometallic component is introduced through a gas inlet zone HCl adjacent to the process chamber ceiling, and an intervening gas inlet zone. The introduction of the process gases takes place together with a carrier gas.

US 4,961,399 A describes an apparatus for depositing III-V layers on a plurality of substrates arranged around a center of a rotationally symmetrical process chamber. A gas inlet member is arranged in the center of the process chamber and serves to introduce a hydride, for example NH3, ASH3 or PH3. In addition, organometallic compounds, which may be, for example, TMGa, TMIn or TMA1, are introduced into the process chamber through the gas inlet element. Together with these process gases, a carrier gas, in particular in the form of hydrogen, is introduced into the process chamber. The susceptor is heated from below. This can be done by means of thermal radiation, by means of high-frequency coupling or otherwise. A useful heater, which is arranged below the susceptor is described in DE 102 47921 AI. In such a CVD reactor, the process chamber extends in the horizontal direction, is bounded below by a susceptor and at the top by a ceiling plate. US 7,560,364 discloses an MOCVD process in which a metal-organic precursor is introduced into a process chamber along with a hydride. By additional introduction of HCl lattice defects should be reduced. These are dislocation defects that propagate through the layer as the layer grows perpendicular to the surface. The addition of HCl produces small tapered etching pits. The dislocation threads then extend perpendicular to the inclined facets of the etch pits so that they are bent.

DE 10 2004 009 130 A1 describes a MOCVD reactor with a process chamber arranged symmetrically about a central gas inlet member. Trimethylgallium and ammonia are introduced into the process chamber together with hydrogen. This paper also deals with theoretical considerations of the growth process. The process gases are introduced into the process chamber at an inlet temperature that is at room temperature or below 100 ° Celsius. The ceiling of the process chamber is kept at a ceiling temperature of less than 500 ° Celsius. The substrate temperature is in the range of about 1000 ° Celsius. Depending on the process gas used or the desired process success, these temperatures vary by 50 ° to 100 ° Celsius. In a flow zone, which adjoins directly to the gas inlet member, the process gases introduced into the process chamber and the carrier gas are heated. This is done essentially via heat conduction. The heat is introduced via the contact of the carrier gas with the process chamber ceiling or the susceptor in the gas phase. Since the susceptor temperature is higher than the top temperature, a so-called cold finger protruding in the direction of flow into the process chamber is formed as a result of the cold inflowing gas, ie a spatial zone within the process chamber. chamber within which the carrier gas and in particular the process gases are heated. As process gases, those are used which decompose when heated in decomposition products; For example, the organometallic compounds gradually decompose via intermediate products into elemental metals, for example, TMGa decomposes via DMGa and MMGa into Ga. The hydrides decompose to a much lesser extent and are therefore offered in excess in process control. The growth rate of GaN on the substrate surface in this example is thus determined by the offer of TMGa.

DE 10 163 394 A1, DE 10 2006 018 515 A1 and US 2008/0132040 Al describe the use of HCl for etching the process chamber after a coating process or the use of HCl as a transport gas for gallium or indium in an HVPE process ,

The growth zone adjoining the flow zone is - according to previous knowledge - the area within the process chamber, within which at least the III component is almost completely decomposed, that is essentially only decomposition products or only metal atoms in the gas phase are present. These diffuse from the volumetric flow above the substrates arranged in the growth zone towards the substrate surface, where the decomposition products are completely decomposed and the hydride decomposes stoichiometrically. Growth is described in previous theories of a boundary-layer diffusion model. The offer, that is, the partial pressure of the III component is chosen so that the decomposition products are deposited crystal-forming on the substrate surface pyrolytically. The surface of the substrate is therefore also monocrystalline. P. Fini et al. Japanese Journal of Applied Physics 37 (1998) 4460 or DD Kosleske Journal of Chrystal Growth 242 (2002) 55 show that with a low total pressure in the process chamber, for example less than 200 mbar, more crystal defects occur in the deposited layer than at higher total pressures, especially at total pressures of more than 400 mbar. In detail, the dislocation density is reduced there and the incorporation of impurities is reduced. At first sight, therefore, the increase in total pressure appears to be a suitable means of increasing crystal quality. However, the research also shows that an increase in total pressure leads to a drastic reduction in the growth rate. In addition, an increase in the process pressure also leads to the onset of parasitic processes and in particular parasitic growth, so that only low pressures are used in the previous production. US 2008/0050889 deals with simulation calculations to determine suitable process parameters in order to suppress parasitic particle formation in a showerhead reactor.

With reference to FIG. 2, DE 10 2004 009 130 A1 shows that the growth rate within the growth zone decreases in the direction of flow. By means of suitable process management, a straight-line course of the decrease in the growth rate can be set. The reason for the decline in the growth rate is the steady depletion of the gas phase due to the actual growth process. If the substrates are rotated by rotating substrate holders, the lateral inhomogeneity of the growth rate due to this depletion effect can be compensated. In the above-mentioned experiment with increased total pressures, however, has shown that no such linear course of the decrease in the growth rate is adjustable. Rather, in the downstream region in the gas phase particles that do not contribute to growth, but are transported with the gas flow directly into the Gasauslassorgan. An increase in the total pressure has thus far led to unusable results for the production only.

According to a model of the gas phase reactions form in the process chamber in a flow zone before the actual growth zone

Adducts between the organometallic component and the hydride. These adducts nucleate nuclei for themselves in the gas phase forming particles which, without contributing to the growth of the layer, are transported by the carrier gas out of the process chamber. If hydrogen is used as the carrier gas, this particle formation is reduced as a consequence of a corrosive effect of the hydrogen. A reduction in the average residence time, ie an increase in the flow rate, can also reduce particle formation within certain limits. The growth rate depends linearly on its flow rate at low partial pressures of the organometallic component and in particular of the TMG. At higher TMG partial pressures, however, a saturation is observed and at even higher partial pressures even a decrease in the growth rate. This limiting partial pressure, at which the growth rate changes sub-linearly with the partial pressure, depends on the total pressure, the residence time of the process gases in the process chamber and the degree of dilution. As a cause for the saturation or the decrease of the growth rates parasitic losses such as adduct formation, nucleation and gas phase condensations are considered. In the industrial manufacturing of semiconductor layers, there is a high interest in high growth rates in order to increase throughput in production.

The extension of the flow zone of the process gas, ie the path that travels the process gas after exiting the gas inlet member to the substrate, leads in rotationally symmetrical about a central gas inlet member arranged process chamber to a disproportionate increase in the base area of the process chamber. As a result, in a process chamber that is suitable for larger-area substrates, the residence time increases compared to a small chamber. Under otherwise comparable conditions, said parasitic losses occur, although they do not occur in a corresponding small process chamber. They often take place in the rear, downstream area of the growth zone. As a result, the otherwise linear growth rate distribution, the so-called depletion curve, breaks down. This has the consequence that even a rotation of the substrate does not lead to a homogeneous growth. Not only the layer thickness but also the layer composition does not run evenly on the substrate.

In "High growth rate process in a SiC horizontal CVD reactor using HCl", Microelectronic Engineering 83 (2006) 48 - 50, the authors describe the effect of HCl with respect to suppression of silicon nucleation. The authors also describe the effect of additional HCI flow in the deposition of silicon-containing layers, in the case of homoepi- rate growth of SiC at low temperatures ", Journal of Applied Physics 104, 053517 (2008). In "Prevention of In-droplet formation by HCl addition during metal vapor phase epitaxy of InN", Applied Physics Letters 90, 161126 (2007) ", the authors describe the effect of Cl, particularly in the form of HCl in a crystal deposition process, in which process gases NH3 and TMIn is used.

The invention has for its object to provide measures by which the occupied with substrates useful surface of the susceptor can be increased.

The object is achieved by the invention specified in the claims. First and substantially, it is provided that the inlet member has at least three separate gas inlet zones, wherein a separating gas inlet zone is arranged between a V or VI inlet zone connected to the source of the V or VI component and a halogen component source zone connected to the halogen component source which is fed during the feeding of the halogen component neither from the source of the V or VI component nor from the halogen component source. It is further provided that the organometallic component or merely an inert gas, for example the carrier gas, is fed through the separation gas inlet zone. For this purpose, the separation gas inlet zone is connected or connectable to the source of the organometallic component. The device then has a total of at least three separate gas inlet zones, whereby the hydride and the halogen component do not enter the process chamber simultaneously through adjacent gas inlet zones or through adjacent channels.

Preferably, only one of the three gas components is introduced into the process chamber through each of the three inlet zones. But it can optionally be provided more gas inlet zones. In successive process steps By means of a control device controlling the valves and the mass flow controllers, process gases having a different composition are fed into the process chamber. The gas inlet member is preferably equipped with a cooling device, with which at least one, preferably all gas inlet zones can be cooled. For this purpose, the walls of the gas inlet zones can have coolant channels through which a coolant flows. Through the gas inlet member process gases can be introduced into the process chamber, which react without the presence of a halogen component to an occupancy eg. The susceptor surface before the growth zone with each other. The halogen component inlet zone may be located adjacent and upstream of a heated surface portion of the process chamber such that parasitic growth is suppressed there. The gas inlet member is cooled with the cooling device to an inlet temperature which is below the decomposition temperature of the process gases. This is done with the cooling liquid flowing through the cooling channels. In the preferably horizontally flowed through the process chamber, the process gas enters through vertically stacked gas inlet zones. The process gas passes through a flow zone, within which the process gases can mix. As the V or VI component, it is preferable to use a hydride which is arsine, phosphine or, preferably, ammonia. As the V component, it is thus preferable to use a nitrogen compound for depositing GaN. As halide component is a halide into consideration, for example. A hydrogen halide compound such as HCl but also the pure halogen, eg. Cl ₂ , especially in ionized form. In the following, the invention is explained using the example of the use of a hydride and TMGa and HCl: Since the hydride and the HCl are introduced into the process chamber vertically spaced at different levels, the halogen component and hydride meet only at a horizontal distance downstream of the inlet zone. half of the flow zone each other. At the place of the meeting, the gases have already been heated in such a way that the gas temperature is above a reaction temperature at which the hydride, for example ammonia and the halogen component, for example HCl, react with one another to form a condensate, namely a solid, for example ammonium chloride. The location at which the halogen component and the hydride first come into contact with each other may also lie within an adduct formation zone, ie in a region of the process chamber in which the gas temperature lies within an adduct formation temperature range, which is in the range for the process gas pairing TMGa and NH3 between 100 ° C to 500 ° C. The halogen component is preferably introduced into the process chamber in the lowest level. This has the consequence that the zone of the process chamber, ie the substrate holder zone, which lies immediately downstream of the halogen component inlet zone, is subjected to the greatest halogen component concentration. The halogen component inlet zone is preferably followed by the heated wall of the susceptor associated with the precursor zone, in which the growth rate is greatest in the absence of a halogen component immediately before the growth zone. In the absence of the halogen component, an occupancy of the precursor zone of the susceptor thus takes place. This parasitic growth can be avoided by introducing the halogen component just above the susceptor. In a preferred embodiment of the device, the hydride inlet zone is located directly below the process chamber ceiling. The process chamber ceiling, like the susceptor, is thermally insulated from the cooled gas inlet member. The process chamber ceiling can be actively heated, to which the process chamber ceiling is assigned a separate heating device. But it is also possible that the process chamber ceiling is only passively heated. The susceptor is provided with a heater, such as a water-cooled RF coil heats and radiates heat that heats the process chamber ceiling. The gas inlet member may be located in the center of a rotationally symmetrical planetary reactor. The susceptor forms a plurality of substrate holders surrounding the gas inlet organ in a planetary manner, which carry one or more substrains and which are rotated about their axis during growth. The gas inlet element fed from above lies in the center of the process chamber. It is ring-shaped surrounded by the susceptor, which can also be rotated. The susceptor has a plurality of depressions, wherein in each depression a circular disk-shaped substrate holder rests, which is rotated resting on a gas cushion. The rotary drive is formed by a directed gas flow. One or more substrates may rest on the substrate holder.

The feed of the process gases through separate gas inlet zones can not only take place in the horizontal direction. It is also provided that the process gases are introduced through the process chamber ceiling in the vertical direction in the process chamber. For this purpose, the gas inlet member is designed in the form of a shower head (showerhead). The process chamber ceiling in this variant has a plurality of sieve-like arranged gas outlet openings, which are arranged in a uniform distribution. In a regular arrangement, there are arranged hydride inlet zones, separating gas inlet zones and halogen component inlet zones each in the form of a single gas outlet opening. However, one of these gas inlet zones may also include a plurality of gas outlet openings. It is then a group of gas outlet openings which forms a gas inlet zone. A halogen component inlet zone is surrounded by a separating gas inlet zone, which is formed by a plurality of gas outlet openings. Likewise, each hydride inlet zone is surrounded by a separation gas inlet zone separated from a plurality of gas outlet zones. Openings is formed. The gas inlet member may have a plurality of superimposed chambers, which are sealed to each other gas-tight. Each of the chambers is connected to a plurality of channels, in particular in the form of tubes with the gas outlet surface, which is formed by the process chamber cover. Immediately adjacent to the process chamber ceiling, a cooling chamber may be arranged so that the process chamber ceiling is cooled. The process gases separate from the individual gas outlet openings into the process chamber, the hydride being separated from the halogen component by a separating gas. The separation gas may be an inert gas. With the separation gas, the III component can be introduced into the process chamber. However, it is also envisaged that the III component is introduced into the process chamber together with the halogen component. The targeted introduction of the halogen component into the adduct formation volume, ie the section of the process chamber in which the adducts form, reduces the particle formation. This has the consequence that the depletion profile is homogeneously adjustable within the growth zone. The depletion profile can be adjusted so that the concentration of the metal of the II or III component in the gas phase drops substantially linearly over the entire growth zone. The mean residence time of the process gases within the process chamber may be more than 1.5 seconds. The length of the growth zone in the flow direction may be greater than 150 mm. Over this distance, the gas phase depletion has a linear course, so that the growth rate decreases linearly with the distance from the gas inlet member. By turning the substrate holder, this gas phase depletion or this inhomogeneous course of the growth rate can be compensated. The HC1 doping of the gas phase into the adduct formation volume leads to a Reduction of adduct formation, nucleation and particle formation. The HCl doping of the gas phase in the adduct formation volume can be adapted to the amount of adduct which would form if HCl was not present. It is sufficient that the gas phase is doped with a quantity of halogen component which is less than 250 ppm of the total amount of gas or less than 10% of the organometallic component. It has surprisingly been found that the amount of HCl to be added per unit time must be at most only one tenth of the amount of II or III component, which is introduced per unit time in the process chamber. The organometallic component used is preferably trimethylgallium, trimethylaluminum or trimethylindium. The hydride used is preferably NH.sub.3, ASH.sub.3 or PH.sub.3. If the process gases TMG, NH3 and HCl are used, the separation gas flow, which flows through the separation gas inlet zone into the process chamber and contains neither the hydride nor the halogen component, causes no ammonium chloride to condense in the gas phase. Ammonia and

Instead, hydrogen chloride only comes into contact where the gas temperature is above the formation pressure of solid ammonium chloride which is dependent on the total pressure. The method is used not only for the deposition of GaN but also for the deposition of AlN or InP or mixed crystals. The substrate temperatures are also above 1000 ° C. For depositing compounds containing in compounds, the substrate temperatures are below 800 ° C. Since the injection of the halogen component, preferably in the form of HCl, into the adduct formation volume etches the adducts in the gas phase as they form, significantly fewer nanoparticles form than in the absence of HCl, which can increase the residence time of the process gases within the process chamber, resulting in longer flow paths with a linear depletion profile due to HCl initiation. This makes it possible to assign the substrates to be coated Increase effective area of the susceptor. Instead of HCl or other Hydrogenhalide but also a pure halogen, for example. Cl ₂ can be used.

By introducing the halogen component, in particular HCl, the morphology of the deposited crystal is also improved. The charge carrier mobility within the crystal is increased.

In prior art planetary reactors in which a plurality of rotationally driven substrate holders are arranged in a circle around a central gas inlet member, the hydrides, eg, NH3, must be supplied at relatively high flow rates, i. be introduced into the process chamber with relatively high density within the gas mixture. The substrate holders must have a relatively large distance to the gas inlet member. The use of the halogen component and in particular of the HCl during the growth process makes it possible to reduce the total amount of flux and thereby to reduce the carrier gas flow, without the increased residence time resulting in the previously observed parasitic processes which bring about losses in the layer quality. It is thus possible uniformly to coat in a process chamber only six or less closely adjacent arranged circular substrates, each having a diameter of 200 mm.

The possibility of reducing the residence time of the process gases within the process chamber and thus reducing the overall flow also makes it possible to influence the height of the process chamber, to increase it, for example, in order to simplify the loading and unloading of the substrates.

The invention will be explained with reference to the accompanying drawings. Show it: schematically a sectional view of a process chamber arranged in a reactor housing, not shown, which is traversed in the horizontal direction of the process gas together with a gas mixing / supply device, in which only the essential elements for explaining the invention are shown, the temperature profile in the flow direction at three different positions in the Process chamber, as a solid line schematically shows the progression of the growth rate over the flow direction without HCl feed and as a dashed line with HCl feed, schematically the top view of a substrate holder, wherein the dashed line the outer edge of a flow zone V and the dotted line of Beginning of a zone C is shown, in which on the susceptor surface parasitic growth can take place. 5 is a sectional view of the gas outlet surface of the gas inlet member 7 with a first arrangement of the gas outlet openings, according to FIG. 5 seen from below, FIG. 5 is a section through a further exemplary embodiment in which the gas inlet member 7 is designed as a showerhead. 8 shows a representation according to FIG. 7, but with a second arrangement of the gas outlet openings, FIG.

9 shows a representation according to FIG. 6 of a further exemplary embodiment, a representation according to FIG. 7 relating to the gas inlet element shown in FIG. 9, and a further arrangement of the gas outlet openings on a gas outlet surface.

The gas mixing / supply device 34 shown in FIG. 1 has a hydride source 30, which in the exemplary embodiment is an ammonia source. It also has a source of an organometallic component 31, which in the exemplary embodiment is trimethylgallium. Furthermore, a halogen component source 32 of a halogen component is provided, which in the exemplary embodiment is HCl. Finally, the gas mixing / supply device 34 also has a carrier gas source 33, wherein the carrier gas is hydrogen.

The sources 30, 31, 32, 33 are shown as gas tanks. It may be a gas cylinder or a bubbler. Each gas source 30, 31, 32 is connected to a gas outlet, which is closable via a valve 26, 27, 28, 29, which valves 26, 27, 28, 29 are switchable by a control device, not shown. Downstream of the valves 26, 27, 28, 29 are mass flow controllers 22, 23, 24, 25, with which a carrier gas stream or a stream of the hydride, the organometallic component or the halogen component is adjustable. With the mass flow controller 24, a halogen component regulated gas stream, which is diluted with the carrier gas stream and which is fed through a halogen component feed line 21 of a halogen component inlet zone 10 of a gas inlet member 7. With the mass flow controller 23, the mass flow of an organometallic component, which can be promoted for example with a carrier gas from a bubbler, regulated. With a mass flow controller 25, this gas stream is diluted and passed through a MO feed line 20 to an MO inlet zone 9. The MO inlet zone 9 forms a separation gas inlet zone. The mass flow controller 22 regulates the mass flow of the hydride, which can also be diluted with a carrier gas flow and which is fed through the hydride feed line 19 to a hydride inlet zone 8.

The MO inlet 20 upstream of the MO inlet zone 9 is provided with valves 27 and mass flow controllers 23 such that it is not possible during the feeding of the halogen component through the halogen component inlet zone 10, a halogen component from the halogen component source 32 or a hydride from the Hydride source 30 through the MO inlet zone 9 pass. The hydride inlet line 19 and the halogen component inlet line 21 upstream of the hydride inlet zone 8 and the halogen component inlet zone 10 are designed so that neither the source 30 derived hydride nor the source 32 derived halogen component can enter the separation gas inlet zone 9, so that through the separation gas inlet zone 9 exclusively one Separation gas can flow, which is an inert gas, namely the carrier gas and the MO component.

The said gas inlet zones 8, 9, 10 are associated with a gas inlet member and, as is generally known from DE 10 2004 009 130 A1, are known. tikal arranged one above the other. The gas inlet member 7 is cooled. It has partitions 12, 13, an upper wall 14 and a lower wall, in which a cooling liquid channel 11 is shown. All partitions 12, 13, 14 can be liquid-cooled and, for this purpose, can have cooling-fluid channels. Preferably, however, only the bottom and the top plate of the gas inlet member, so in addition to the liquid channel 11 still provide a further fluid channel in the region of the partition wall 14. As a result, the other partitions may have a minimum material thickness. The gas inlet member 7 forms the gas inlet zone E. By means of cooling water, the gas inlet member 7 can be maintained at temperatures in the range below 250 ° C or 300 ° C. Preferably, however, the temperature of the gas inlet member 7 is kept at temperatures below 150 ° to avoid MO decomposition.

In a horizontal extent, the process chamber 1, whose bottom is formed by a susceptor 2 and whose ceiling 6 extends parallel to the susceptor 2, adjoins the gas inlet zones 8, 9, 10 lying vertically above one another like a floor. The three gas inlet zones 8, 9, 10 arranged one above the other extend over the entire height of the process chamber 1, the halogen component inlet zone 10 directly adjoining the bottom of the process chamber and the hydride inlet zone 8 directly adjoining the ceiling 6 of the process chamber 1 and the separation gas inlet zone 9 is interposed. The individual superimposed gas inlet zones 8, 9, 10 may have identical heights. But it is also envisaged that the gas inlet zones 8, 9, 10 have different heights. At a process chamber height of about 20 mm, the heights of the hydride inlet zone 8, the separation gas inlet zone 9, and the halogen component inlet zone 10 may have a height ratio of 1: 2: 1. In one variant, the height ratio 1: 3: 1 is provided. In the direction of flow, a feed zone V connects to the inlet zone E. The flow zone V extends over a heated wall portion 15 of the susceptor 2. The heating of the susceptor 2 via an RF heater 18 in the form of a water-cooled heating coil, which is arranged below the susceptor 2. In the susceptor 2 made of graphite or other conductive material thereby eddy currents are generated, which leads to a heating of the susceptor 2. Depending on the process step, the susceptor 2 is heated to different temperatures, for example for depositing a seed layer GaN / AlN at 550 ° C., an n-GaN layer at 1050 ° C., a p-type GaN layer at 900 ° C., an InGaN Layer to 750 ° C of an AlGaN layer

1050 ° C and for deposition of AlGaN layers for optoelectronic applications (UV LEDs) up to 1400 ° C. The susceptor 2 opposite ceiling wall 6 has a by about 200 ° C (or more) lower temperature when it is not actively heated. With an actively heated ceiling wall 6, however, the temperature difference is lower. It can also be zero. It is also possible to heat the process chamber ceiling 6 to a higher temperature than the susceptor 2.

Downstream of the flow zone V extends the growth zone G, in which one or more substrate holders 3 are arranged. In the sectional view of Figure 1, only a circular disk-shaped substrate holder 3 is shown, which rests in a recess 5 of the susceptor 2 and which is rotated on a gas cushion during the implementation of the method. On the substrate holder 3 there is a substrate 4 to be coated whose substrate temperature T _s can be regulated to a value typically between 900 and 1100 ° C. The hot susceptor 2 heats the process chamber 1 to a temperature T _c . In the middle of the process chamber 1, a gas temperature TB sets in, which is between the process chamber ceiling temperature T _c and the substrate temperature T _s .

The growth zone G is adjoined by an outlet zone A, in which a gas outlet device 16 is arranged, which is connected to a vacuum pump 17, so that the total gas pressure within the process chamber can be set to values between a few millibars and atmospheric pressure.

The process chamber shown schematically in FIG. 1 has a circular susceptor 2, which concentrically surrounds the likewise gas-symmetrical gas inlet member 7.

The vertical spacing of the partitions 12, 13, which defines the height of the MO inlet zone 9, is chosen such that the diffusion boundary layer D shown in dashed lines in FIG. 1 is formed. The diffusion boundary layer D symbolizes the boundary until the hydrides introduced within the precursor zone V halogen component from the halogen component inlet zone 10 in the upward direction to the hydrogen flow and introduced through the hydride inlet zone 8 diffuse downwards in the direction of the halogen component. The hydrides or halogen component thereby diffuse into a separation gas flow which enters the process chamber through the separation gas inlet zone 9. The inlet zone 9 located between the hydride inlet zone 8 and the halogen component inlet zone 10 therefore forms a separating gas inlet zone through which, together with a carrier gas, the organometallic component is introduced into the process chamber.

The upper and lower diffusion boundary layers D, which are only shown qualitatively, meet at the beginning of a region M of the lead zone V in which the gas temperature TB has reached a value above 338 ° C. at atmospheric pressure, at which NH 3 and HCl no longer react to form a ammonium chloride powder. At reduced total pressure in the process chamber, this gas temperature drops to, for example, 220 ° C at 10 mbar.

FIG. 2 schematically shows the profile of the temperature T _{s of} the susceptor, the temperature TB of the gas approximately in the vertical center of the process chamber, and the temperature T _{c of} the process chamber ceiling, in each case along the flow direction of the process gas. It can be seen that in the region of the preliminary zone V, the gas temperature has the lowest values. Thus, a cold finger forms approximately in the middle of the flow zone. At the end of the cold finger, where the halogen component comes into contact with the hydride, adducts are formed in the absence of the halogen component, inter alia, with the use of ammonia and TMGa. These form the nucleation nuclei for particles, which, in the absence of the halogen component, bind a large number of the ΠΙ-metal atoms, which are thus removed from the layer growth. The spatially separate inlet of the halogen component of the hydride leads process technology to an injection of the halogen component in an adduct formation volume, which lies in the zone M. This adduct formation volume is doped with the halogen component, it being sufficient if a maximum of 250 ppm of the total amount of gas HCl or the HCl flow in the process chamber is below 10% of the MO gas flow.

It can be seen from FIG. 2 that the temperature T _{s of} the susceptor 2 increases linearly in the region of the flow zone V and then proceeds substantially constantly in the region of the growth zone G and decreases again in the region of the outlet zone. The temperature T _{c of} the radiant-heated reactor ceiling 6 also increases continuously in the region of the flow zone V and runs in the Area of the growth zone G constant, and then drop off again in the region of the outlet zone A. The gas temperature TB has substantially the same course as the temperatures T _s and T _c . However, it rises steeply in the feed zone V than the temperature T _c of the process chamber cover 6. exceeds only in the zone M, the temperature T _c of the process chamber ceiling.

FIG. 3 qualitatively shows the progression of the growth rate in the direction of flow as a solid line without HCl feed and as a dashed line with HCl feed, the course of the growth rate curve substantially corresponds to the profile of the partial pressure of the metal of the II or III component in the gas phase. It can be seen that without HCl feed, the maximum of the growth rate r is in the feed zone V, immediately upstream of the growth zone G, ie in the gas mixing zone M. Without HCl feed, the growth rate r or the depletion curve of the Metal component in the growth zone G non-linear, so that it comes to inhomogeneous growth on the rotated during the deposition process substrates. The edge regions of the substrates have a higher layer thickness than the center of the substrates. As a result of the halogen component feed directly above the hot wall section 15 of the susceptor 2 there prevails at the surface a relatively high halogen component concentration. The halogen component, for example HCl, can develop there a surface-etching effect, so that in the hot flow zone 15 parasitic growth can be suppressed. The maximum of the growth rate shifts towards the downstream. At the same time the depletion curve is linear. The latter can be attributed in particular to the reduced adduct formation due to the HCl feed. FIG. 4 shows schematically the plan view of a susceptor 2, in which a multiplicity of substrate holders 3 are arranged in a ring around the gas inlet element 7 arranged in the center. The diameters of the substrate holders 3 can also be larger, so that the substrate holders 3 almost touch each other. The reference numeral V, the precursor zone V surrounding the gas inlet member 7 is circular, within which the growth rate in the radially outward direction increases steadily. The reference numeral C designates an annular region in which parasitic growth can take place on the surface of the susceptor 2. By introducing HCl through the inlet zone 10, the dot-dash line marking the beginning of the zone C can be displaced in a radially outward direction. Without additional introduction of HCl dash-dotted line is immediately downstream of the gas inlet member 7, the shift of indicated by the dashed line beginning of the zone C is changed by introducing HCl to the distance position shown in Figure 4.

By introducing small amounts of a halogen component, for example HCl into the adduct formation zone, the reactor can be operated with relatively low gas flows, so that the average residence time of the process gas within the process chamber 1 is greater than 1.5 seconds. However, the length of the growth zone G in the flow direction may be more than 150 mm. Within this length of the growth zone G, the gas phase depletion, in particular the III component, decreases linearly, so that layers of homogeneous layer thickness can be deposited by rotating the substrate 4.

Due to the reduction of particle formation, the growth rate downstream of the flow zone V is also increased at the same time. 5 shows schematically the structure of a further embodiment in which above the susceptor 2, on which one or more substrates 4 are arranged, the process chamber 1 extends, the cover 6 is formed by a gas inlet member 7, as for example. In EP 0 687 749 B1 is described.

The gas inlet member extends over the entire extension surface of the susceptor 2 and has a plurality to the process chamber 1 facing out gas outlet openings through which the various process gases can flow into the process chamber.

The gas inlet member 7 has a plurality of superimposed chambers. In a directly above the process chamber ceiling 6 arranged chamber 11 is a cooling liquid. Through this chamber 11 pass through a plurality of gas channels formed by tubes. The gas outlet openings designated 9 are connected to a chamber 35, in which an inert gas, in particular nitrogen or hydrogen, is fed. Above this chamber 35, which is also connected to tubes with the gas outlet level, ie with the process chamber ceiling 6, there is a chamber 36, into which a hydride, in particular ammonia, is fed. This chamber 36 is also connected via a tube, which now also in addition to the chamber 11 and the chamber 35, connected to the gas outlet opening, which is designated by the reference numeral 8. In an overlying chamber 37, which is also connected to tubes with the gas outlet surface, an inert gas, the halogen component and the organometallic component is fed. This chamber 37 is one with the chambers 11, 35, 36th crossing tube with the designated by the reference numeral 10 opening.

The lateral arrangement of the openings is shown in FIGS. 7 and 8, respectively.

It can be seen that each gas outlet opening 8, 10 forms a gas inlet zone. Through the gas inlet zones 8, the hydride, in this case ammonia, is introduced into the process chamber. The hydride inlet zones 8 are each surrounded by a multiplicity of gas outlet openings, through which the separating gas, in the present case nitrogen or hydrogen, is introduced into the process chamber. These separating gas inlet zones 9 surround the individual gas outlet openings 8, 10. The gas outlet openings, designated by the reference numeral 9, through which the separating gas flows into the process chamber surround the gas outlet openings, designated by the reference numbers 8 and 10, respectively, which respectively contain gas inlet zones for the hydride and the gas inlet zones form the halogen component.

Through the halogen component inlet zone 10, the organometallic component is introduced into the process chamber together with HCl and an inert gas. The halogen component inlet zones are each surrounded by a separating gas inlet zone 9. The separation gas inlet zone 9 is formed by a plurality of gas outlet openings. It can be seen from FIGS. 7 and 8 that neither the hydride inlet zone 8 nor a halogen inlet zone 10 are arranged directly adjacent to one another. There are always at least two separation gas inlet zones 9 between the hydride inlet zone 8 and the halogen component inlet zone 10 arranged that an inert gas curtain forms around a hydride inlet zone 8 and an inert gas curtain around a halogen component inlet zone 10.

The further embodiment shown in FIG. 9 likewise has a showerhead 7 which has a multiplicity of chambers arranged one above the other, the chamber 11 arranged immediately above the process chamber ceiling being cooled with coolant. In the immediately above chamber 37, an inert gas is fed together with the halogen component. The associated gas outlet belongs to a halogen component inlet zone 10.

In the chamber above it ammonia, so the hydride, fed. This chamber is connected to a plurality of tubes with the gas outlet surface. The mouth of each tube belongs to a hydride inlet zone 8.

In the uppermost chamber 35, an inert gas, for example. Hydrogen or nitrogen, and the III-MO component is fed. This chamber is connected to the process chamber ceiling 6 with a plurality of tubes. The mouth of each tube belongs to a separation gas inlet zone 9 through which not only the inert component but also the III component is introduced into the process chamber.

FIG. 10 shows the lateral arrangement of the individual gas outlet openings. Again, it will be appreciated that each halogen component inlet zone 10 is surrounded by six separation gas inlet openings 9 and each hydride inlet zone 8 is also surrounded by six separation gas inlet openings 9 so that around each hydride inlet zone 8 and halogen component inlet zone 10, respectively Gas curtain forms through which the inert gas or the III component is introduced into the process chamber.

In the exemplary embodiment illustrated in FIG. 11, each hydride inlet zone 8 or each halogen component inlet zone 10 is surrounded by an annular gas outlet opening 9, through which a separating gas can be introduced into the process chamber. In FIGS. 6, 7, 9 and 10, the gas outlet openings 8, which each form a hydride inlet zone, are shown as black slices. The gas outlet openings 10, through which the halogen component are introduced into the process chamber, are provided with a cross. The gas outlet openings forming the separation gas inlet zones 9 are shown as circles. The values for the diameters of the gas outlet openings and their distances and arrangements may vary. For example, the entire hole area may be less than 1%, less than 3% or less than 5% of the total area of the gas outlet surface.

Here again, the flow conditions and the spatial arrangement are chosen so that the V component, ie the hydride, only comes into contact with the halogen in a region of the process chamber in which the gas temperature is above a temperature at which ammonium chloride forms.

In the first experiments gallium nitrite was deposited at a substrate temperature Ts of 1050 ° C and at a process chamber ceiling temperature T _c of 900 ° C at a respective same hydrogen carrier gas amount. This was done at residence times of 0.58 seconds, 1.01 seconds and 1.52 seconds. Radial depletion was measured by growth rates on a 4-inch sapphire substrate. Without the addition of HCl, the depletion curve is very inhomogeneous with high residence times and drops already in the middle of the growth period. zone G to less than a third. Due to the addition of only 2 sccm HCl, the depletion curves are essentially congruent for all three residence times. It has been found that a molar ratio of 2% HCl / TMGa is sufficient to linearize the depletion curve. Optimal results are achieved when the molar ratio between HCl and TMGa is approximately in the range of 5% to 7%. At higher molar ratios, the above-described suppression of parasitic growth in the precursor zone V takes place. In second experiments, aluminum nitrite was deposited instead of gallium nitrite. The III component used was TMAl. TMAl is far more reactive to NH3 than TMGa. In addition, the adducts are considered very stable. Aluminum nitrite was also deposited here on 4-inch sapphire substrates, but at a substrate temperature of 1200 ° C at a process chamber ceiling temperature of about 1100 ° C and each hydrogen carrier gas amount. The residence times of the process gases within the process chamber were 0.08 seconds and 0.33 seconds, respectively. Again, without the addition of HCl, a significant dip in the depletion curve was observed for the long residence time. The addition of HCl also led to a linearization of the depletion curve with longer growth times.

In a variant in which the height of the hydride inlet zone is 5 mm, the separating gas inlet zone 9 is 10 mm and the halogen component inlet zone 10 is 5 mm, 16.6 slm NH3 are produced through the upper gas inlet zone 8 and 31 31 slm H through the central gas inlet zone ₂ + 6 slm N ₂ and fed through the lower gas inlet zone 10 16.8 slm H ₂ . For reasons of flow stability, the gas flow distribution is roughly oriented to the height distribution of the gas inlet zones 8, 9, 10 so that the gas velocity from the inlet level to the inlet level is not determined. remains the same. The maximum mismatch of the gas velocities, the pulse current densities (rho * v) or the Reynolds numbers (rho * v * H / μ) can be for example 1: 1.5 or 1: 2 or 1: 3. In addition, HCl is fed through the lower gas inlet zone 10, the HCl flow corresponding to a maximum of about one tenth of the flow of the pure organometallic component, which is additionally fed through the central inlet zone 9. In a scale

U ^■ H ² tion of the process chamber is taken to ensure that the index remains constant, where U is the average gas velocity in all three inlet levels at the same pressure, H is the height of the central inlet, R is the radius of the gas inlet member 7 and D is the diffusion coefficient of the process gas in the gas mixture. This results in the following application examples: If the height H of the central inlet is doubled, then the gas velocities can be quartered. If the diameter of the gas inlet member 7 is doubled, the height H of the central inlet must be increased by the factor of 1.4. Alternatively, the flow rates can be quadrupled.

It is also envisaged to feed the halogen component, in particular HCl, together with the organometallic component through a common gas inlet zone into the process chamber. Furthermore, the organometallic component mixed with the hydride can also be fed into the process chamber through a common gas inlet zone. The process gases can also be introduced into the process chamber with the help of differently designed gas inlet members.

The process chamber may have a diameter of 365 mm and a height of 20 mm. The height of the inlet zones 8, 9, 10 is on average 10 mm or obeys the above scaling rule. The inlet zone E extends to a radius of about 22 mm. The flow zone runs in a radial range between 22 mm and 75 mm. The growth zone G extends in a radial range between 75 and 175 mm. Radially outside the growth zone G is the outlet zone A. The total gas flow through the process chamber is between 70 and 90 slm. The growth processes are carried out in a pressure range between 50 and 900 mbar. At a total pressure of, for example, 400 mbar, the ammonia partial pressure may correspond to 95 mbar, the TMG partial pressure to 0.073 mbar to 0.76 mbar. Without the addition of HCl, the growth rate saturates at a TMGa partial pressure of about 0.255 mbar. With the addition of HCl, the growth rate can be increased to values above 10 μιη / h. With a 5% molar ratio of HCl: TMGa were at a TMGa partial pressure of 0.35 mbar 13.8 μιη / h and at a TMGa partial pressure of 0.76 mbar 26.5 μιη / h achieved as a growth rate.

Among other things, the following parameter sets lead to improved results compared to the prior art:

Total pressure = 600 mbar, p (NH3) = 142.5 mbar, TMGa partial pressures of 0.04 mbar to 0.82 mbar (corresponding to 2.13E-4 to 4.3E-3 mol / min).

Total pressure = 800 mbar, p (NH3) = 190 mbar, TMGa partial pressures of 0.054 mbar to 1.09 mbar (corresponding to 2.13E-4 to 4.3E-3 mol / min). Total pressure = 900 mbar, p (NH3) = 214 mbar, TMGa partial pressures of 0.06 mbar to 1.23 mbar (corresponding to 2.13E-4 to 4.3E-3 mol / min). All disclosed features are essential to the invention. The disclosure of the associated / attached priority documents (copy of the prior application) is hereby also incorporated in full in the disclosure of the application, also for the purpose of including features of these documents in claims of the present application. The subclaims characterize in their optional sibling version independent inventive development of the prior art, in particular to make on the basis of these claims divisional applications.

LIST OF REFERENCE NUMBERS

1 process chamber 27 valve - MO

2 susceptor 28 valve - halogen component

3 substrate holder 29 valve - carrier gas

4 Substrate 30 Source - hydride

5 recess 31 Source - MO

6 Process chamber ceiling 32 Source - halogen component

7 Gas inlet element 33 Source - carrier gas

8 Hydrideinlasszone 34 Gasmisch / - Versorgungs¬

9 Separating gas inlet zone (MO) device

10 halogen component inlet zone 35 chamber

11 coolant channel 36 chamber

12 partition 37 chamber

13 partition

14 upper wall E inlet zone

15 Wall section V Supply zone

16 Outlet device G Growth zone

17 Vacuum pump A Outlet zone

18 RF heating D Diffusion boundary layer

19 hydride inlet M mixing zone

20 MO supply line

21 Halogen component feed

22 MFC hydride

23 MFC MO

24 MFC halogen component

25 MsFC carrier gas

26 valve hydride

Claims

A method for depositing II-VI or III-V layers on one or more substrates (4), wherein process gases in the form of an organometallic II or III component, a V or VI component, in particular a hydride and a halogen component in a gas mixing / supply device (34), the at least one substrate (4) being applied to a susceptor (2) in a process chamber (1), the susceptor (2) and at least one process chamber wall (6) a susceptor temperature (T _s ) or wall temperature (T _c ) are heated, the process gases are optionally introduced together with a carrier gas in separate gas flows by means of a gas inlet member (9) in the process chamber (1) where the organometallic component and the V - or VI component, in particular the hydride pyrolytically react with each other at the substrate surface, so that on the substrate (4) a layer is deposited, and the halogen component is a parasite Reduced particle formation in the gas phase or suppressed and the reaction products optionally together with the carrier gas through a gas outlet (16) leave the process chamber, characterized in that process gases are used, which in the absence of the halogen component in an adduct formation zone (M) in the Gas temperature (TB) is in an adducting temperature range, form adducts, and that the halogen component is introduced separately from the V or VI component, in particular from the hydride in the process chamber (1) that the V or VI component, in particular the Hydride only in the adduct formation zone in contact with the halogen component occurs. A method for depositing II-VI or III-V layers on one or more substrates (4), wherein process gases in the form of an organometallic II or III component, a V or VI component, in particular a hydride and a halogen component in a gas mixing / supply device (34), the at least one substrate (4) is applied to a susceptor (2) in a process chamber (1), the susceptor (2) and at least one process chamber wall (6) to a susceptor temperature ( T _s ) or wall temperature (T _c ) are heated, the process gases are optionally introduced together with a carrier gas in separate gas flows by means of a gas inlet member (9) in the process chamber (1), where the organometallic component and the V or VI -Component, in particular the hydride pyrolytically react with each other at the substrate surface, so that on the substrate (4) a layer is deposited, and the halogen component is a parasitic Par reduced or suppressed tikelbildung in the gas phase and reaction products optionally together with the carrier gas through a gas outlet (16) leave the process chamber, the process gases by spatially separated gas inlet zones (8, 9, 10) of the cooled gas inlet member (7) in the process chamber (1), wherein spatially between a V or VI inlet zone (8), through which the V or VI component, in particular the hydride enters the process chamber (1) and a Halogenkomponenteneinlasszo- ne (10), by which the halogen component enters the process chamber (1), a separation gas is fed through a separation gas inlet zone (9) into the process chamber (1) containing neither the halogen component nor the V or VI component, especially the hydride. A method according to claim 2 or in particular according thereto, characterized in that the separating gas contains the organometallic component.

Method according to one of claims 2 or 3 or in particular according thereto, characterized in that a V or V component and a halogen component are used, which react below a reaction limit temperature to form a condensate, in particular a solid with each other and the gas flow through V or VI inlet zone (8), the halogen component inlet zone (10) and the separation gas inlet zone (9) and the distance between V or VI inlet zone (8) and halogen component inlet zone (10) is selected such that the halogen component and the V- or VI- Component only in a section (M) of the process chamber (1) come into contact with each other, in which the gas temperature is higher than the reaction limit temperature.

Method according to one of claims 1 to 4 or in particular according thereto, characterized in that a linear depletion profile of the metal of the organometallic component in the gas phase in the flow direction over the entire growth zone (G) is adjustable by a variation of the halogen component flow in the process chamber (1).

Method according to one of claims 1 to 5 or in particular according thereto, characterized in that at residence times of the process gas of more than 1.5 seconds in the process chamber homogeneous layers on rotating substrates (4) are deposited and / or that the length of the growth zone ( G) within which homogeneous layer growth takes place is at least 150 mm. Method according to one of claims 1 to 6 or in particular according thereto, characterized in that the halogen component is HCl and the HCl gas flow in moles / second is less than 250 ppm of the total gas flow or less than 10% of the flow of the organometallic component in the process chamber.

Method according to one of claims 1 to 7 or in particular according thereto, characterized in that the gas inlet member (7) and in particular one or more walls of the gas inlet zones (8, 9, 10) are cooled in particular by means of a coolant.

Apparatus for carrying out the method according to one or more of the preceding claims, comprising a reactor housing having a process chamber (1) arranged in the reactor housing, a susceptor (2) arranged in the process chamber (1) for receiving the substrate (4), a heating device (18 ) for heating the susceptor (2) to a susceptor temperature (T _s ), a gas inlet member (7) associated with the process chamber (1), optionally together with process gases in the form of a V or VI component in a carrier gas , in particular a hydride, an organometallic II or III component and a halogen component in the process chamber (1) to initiate, and a gas outlet device (16) for the exit of reaction products and possibly the carrier gas from the process chamber (1), with a gas mixture / - Supply means (34) comprising a source (31) for the organometallic component, a source (30) for the V or VI component, in particular for the H ydrid, and a source (32) for the halogen com- component, wherein the sources (30, 31, 32) via delivery lines (19, 20, 21), the controlled by a control device valves (26, 27, 28) and mass flow regulator (22, 23, 24), with the Gas inlet member (7) are connected to bring the organometallic component, the V or VI component, in particular the hydride and the halogen component in separate gas flows optionally together with the carrier gas in the heated process chamber (1), characterized in that the gas inlet member (7) has at least three separate gas inlet zones (8, 9, 10), between a V or VI inlet zone (8) connected to the V or VI source, in particular the hydride source (30) a halogen gas inlet zone (9) is arranged with the halogen component source (32), and the control device or the gas mixing / supply device (34) is configured such that in the case of a halogen component fed through the halogen component inlet zone (10) through the separation gas inlet zone (9), a separation gas containing neither the V or VI component nor the halogen component flows into the process chamber (1). 10. The device according to claim 9 or in particular according thereto, characterized in that the gas inlet member (7) has a cooling device (11) and at least the wall of a gas inlet zone (8, 9, 10) but preferably all gas inlet zones (8, 9, 10) cools become. 11. Device according to one of claims 9 or 10 or in particular according thereto, characterized in that the halogen component inlet zone (10) is arranged adjacent to and upstream of a heated surface portion (15) of the process chamber (1) that there as As a result of the halogen component feed parasitic growth is suppressed.

12. Device according to one of claims 9 to 11 or in particular according thereto, characterized in that the distance between the hydride inlet zone (8) and halogen component inlet zone (10) is selected so that by selecting suitable gas flow parameters, the halogen component and the V or VI Component, in particular the hydride only in a flow section (M) come into contact with each other, in which the gas temperature (TB) is in an adducting temperature range in which in the absence of the halogen component, the V or VI component, in particular the hydride with the organometallic component forms adducts. 13. Device according to one of claims 9 to 12 or in particular according thereto, characterized in that the distance between the hydride inlet zone (8) and halogen component inlet zone (10) is selected so that by selecting suitable gas flow parameters, the halogen component and the V or VI component, in particular, the hydride only come into contact with each other in a flow section (M) in which the gas temperature (TB) is higher than a reaction temperature at which the V or VI component, in particular the hydride reacts with the halogen component to form a solid. 14. Device according to one of claims 9 to 13 or in particular according thereto, characterized in that the susceptor (2) extends in the horizontal direction, carries one or more rotationally driven substrate holder (3) on which at least one substrate (4) can be arranged, Where- above the susceptor (2), a process chamber ceiling (6) delimiting the process chamber (1) is provided, and wherein the gas inlet zones (8, 9, 10) of the gas inlet element (7) are vertically stacked between susceptor (2) and process chamber ceiling (6) are arranged so that within the process chamber (1) a horizontal gas flow to

Gas outlet (16) forms.

15. Device according to one of claims 9 to 14 or in particular according thereto, characterized in that the gas inlet member (7) the process chamber ceiling (6) and forms a plurality of closely juxtaposed gas outlet openings which are arranged so that a plurality of hydride inlet zones (8) and a plurality of halogen component inlet zones (10).