201248695 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種將II-VI族或III-V族半導體層沉積 於一或多個基板上的裝置，包含反應器殼體及混氣/供氣裝 置，該反應器殼體具有佈置於該反應器殼體内的處理室、佈 置於該處理室内用於承載該基板的基座、用於將該基座加熱 至基座溫度的加熱裝置、分配給該處理室的進氣機構以及將 反應產物與運載氣體排出該處理室的排氣裝置，該進氣機構 用於將形式為V族或VI族成分(特別是氫化物）、金屬有機 II族或III族成分以及鹵素成分之處理氣體視情況分別連同 一運載氣體送入該處理室，該混氣/供氣裝置具有用於該金 屬有機成分之氣體源、用於該V族或VI族成分(特別是氫 化物）之氣體源及用於該鹵素成分之氣體源，其中，該等氣 體源透過具有控制閥及質量流量控制器的輸送管與該進氣 機構相連，以便將該金屬有機成分、該V族或VI族成分(特 別是氫化物）及該i素成分以彼此隔開的氣體流量並視情況 分別連同該運載氣體送入該經加熱的處理室，其中，利用對 該等閥門及質量流量控制器實施控制的控制裝置以前後相 繼的處理步驟將不同成分的處理氣體送入該處理室。 本發明亦有關於一種將II-VI族或III-V族層沉積於一或 多個基板上的方法，其中，在混氣/供氣裝置中提供形式為 金屬有機II族或III族成分、V族或VI族成分(特別是氫化 3 101113426 201248695 物)以及齒素成分之處理氣體，將該至少一基板放置到處理 室内的基座上，將該基座及至少一處理室壁加熱至基座溫度 或壁溫度，利用進氣機構將該等處理氣體視情況連同運載氣 體以彼此隔開的氣體流量送入該處理室，該金屬有機成分與 該V族或VI族成分(特別是氫化物)在該處理室内的基板表 面上發生熱解反應，從而在該基板上沉積一層，該函素成分 減弱或抑制氣相巾的寄生粒子形成，經由排氣裝置將反應產 物視情況連同該運載氣體排出該處理室，其中，利用對閥門 及質1流量控制器實施控制的控制裝置以前後相繼的處理 步驟將不同成分的處理氣體送入該處理室。 【先前技術】 US 7,585,769 B2描述類似裝置與方法。其將族半導 體層 >儿積於反應器殼體内之基板上。送入反應器殼體之處理 室的處理氣體含有氫化物(如氨氣）、金屬有機成分(如三曱基 鎵)及函素成分(如氯化氫）。此裝置具有位於基座垂直上方的 喷淋式進氣機構，該基座水平延伸並承載被相應加熱裝置加 熱至處理溫度的基板。ii素成分單獨或與其他處理氣體一同 被送入處理室並在處理室内阻止或抑制在氣相中形成粒子。 DE 10 2007 009 145 A1描述一種採用MOCVD法沉積晶 體層的裝置’經由三個上下疊置的進氣區送入不同處理氣 體。其中，鄰接基座的進氣區輸送NH3，鄰接處理室頂部的 進氣區輸送鹽酸，處於二者之間的進氣區輸送金屬有機成 101113426 4 201248695 分。各處理氣體皆連同運載氣體一起輸入。 US 4,961，399 A描述一種將ΙΠ_ν族層沉積於多個基板上 的裝置，此等基板圍繞旋轉對稱式處理室之中央佈置。處理 室中央設有一進氣機構，其用於輸送ΝΗ3、ASH3或ΡΗ3等 氫化物。此進氣機構亦將金屬有機化合物（例如，TMGa、 TMIn或TMA1)送入處理室。連同上述處理氣體一同進入處 • 理室的還有運載氣體，特別是氫氣。自下而上加熱基座。可 採用熱輻射、高頻耦合或其他手段實施加熱。DE 102 47 921 A1描述一種佈置於基座下方的可用加熱器。此種CVD反應 器上的處理室水平延伸’此反應器下方被基座限制，上方被 頂板限制。 US 7,560,364揭露一種將金屬有機基本材料連同氩化物 送入處理室的MOCVD法。透過送入鹽酸來減少晶格缺陷。 即減少在層生長過程中在垂直於表面的方向上穿過層線狀 擴散的位錯缺陷。添加鹽酸後會產生逐漸變尖的小蝕刻坑。 位錯線狀物便會朝此等蝕刻坑的傾斜稜面垂直擴散，從而發 生彎曲。 DE 10 2004 009 130 A1描述一種M0CVD反應器，包含 圍繞中央進氣機構對稱佈置的處理室。三甲基鎵及氨氣連同 氫氣被送入處理至。該公開案亦對生長過程進行過理論上的 敍述。在某個進人溫度（室溫或低於1G(rc)條件下將處理氣 體送入處理室。將處理室頂部的溫度保持在低於5()〇<t之頂 101113426 5 201248695 部溫度條件下。基板溫度約為looot：。上述溫度可上下浮 動5叱至1G(rc：，具體視處理氣體或期望達到的處理效 果而定。在緊挨進氣機構的前置區内對送人處理室的處理氣 體及運載氣體進行加熱。主要透過熱傳導實施加熱。透過讓 運載氣體接觸處理室頂部或基座來將熱量輸人氣相。基座溫 度尚於頂部溫度，故而冷流動氣體形成沿流動方向進入處理 室的所謂“冷指，，，即處理㈣對運载氣體特狀處理氣體 進行加熱的空間區域。採用受熱後會分解為相應分解產物的 處理氣體為處理氣n ;因此，金屬有機化合物逐步經中間產 品分解為金屬元素，例如，TMGa經DMGa及MMGa分解 為Ga。氫化物的分解程度極低，故而需要在處理過程中過 量提供氫化物。m此在採用GaN時，基板表面上⑽的生 長率取決於TMGa的供應量。 DE 10 163 394 Al、DE 10 2006 018 515 A1 及 US 2008/0132040 A1描述一種鹽酸的應用，用於在塗層步驟完 畢後對處理室進行餘刻以及在HVpE處理過程中將鹽酸用 作輪送鎵或銦的輪送氣體。 根據現有s忍識，連接前置區之生長區係處理室内讓至少 ΠΙ族成分幾乎完全分解的區域 ，亦即’該區域内基本上僅 存，刀解產物即氣相中的金屬原子。此等分解產物自位於生 長區内基板上方的體積流量朝絲表面擴散並就地完全分 解且氣化物發生化學計量分解。現有理論係利用邊界層擴 101113426 6 201248695 散模型來描述生長。採用某種供應量（即分壓）的m族成分， 使得分解產物以在基板表面形成晶體的方式發生熱沉積。此 時之基板表面亦呈單晶態。 P. Fini et al. Japanese Journal of applied physics 37 (1998) 4460 抑或 D. D. Koleske Journal of Chrystal Growth 242 (2002) 55表明，與處理室總壓較高（例如，高於400 mbar) 的情況相比’總壓較低(例如，低於2〇〇 mbar)時所沉積的層 中的晶體缺陷更多。具體而言，後者的位錯密度更小且不會 嵌入雜質。因此，看上去可透過增大總壓來提高晶體品質。 但研究結果表明，總壓升高會大幅降低生長率。此外，增大 總壓還會引起寄生過程(特別是寄生生長），故而迄今為止的 生產過程僅採用低壓進行操作。 US 2008/0050889提出用於測定相應處理參數之模擬運算 法，其目的在於抑制喷淋式反應器中的寄生粒子形成。 DE 10 2004 009 130 A1藉其圖2表明，生長區内的生長 率隨流動方向遞減。可採用相應處理過程實現生長率的直線 型下降。生長率下降之原因在於氣相因生長過程而持續耗 竭。若用旋轉式基板座來旋轉基板，則可對生長率因此耗竭 效應而發生的橫向不均勻性加以補償。 前述在總壓較高的條件下所進行的實驗中無法實現生長 率的直線型下降。確切而言，此時會在氣相下游區域内形成 無助於生長且隨氣體流直接輸入排氣機構的粒子。因此，先 101113426 7 201248695 前技術中增大龍僅能在生產雜中產生無法使用的結果。 根據-種氣相反應模型，在處理室之位於真正意義上。的^ 長區前的前置區内形成金屬有機成分與氫化物的加合物。此 等加合物形成可在氣相中產生粒子的成核晶種，此等粗子無 助於層生長並被運載氣體帶出處理室。採用氫氣味運辦 時’粒子形成會因氫氣的#刻作用而減弱。此外還可遷過咸 ^句停留時間(即提高流速)來在-定範圍内削弱教子形 在金屬有機成分(特別是TMGs)之分壓較低的情死下，生 長率與該有機成分的流率線性相關。但τ廳分壓過高會、止 成飽和現象’進—步增大分壓甚至會降低生長率。生長= 超過某個邊界分壓後隨分壓變化而呈亞線性變化，該邊 麗與處理室内處理氣體之總壓及停留時間以及與稀釋程= 相關。造成飽和即生長率下降的原因為寄生損失，例如，二 合物形成、成核及氣相縮合。 提高半導體層的生長率可提高其產量，故對工業生產而古 具有重大意義。 σ 广在處=室圍繞中央進氣機構旋轉對稱的情況下，延長處理 氣體之前置區’即延長處理氣體在排出進氣機構後到達基板· 前所覆蓋的距離會導致處理室基面的超比例增大。因此，適· 用於大面積基板之處理室内的停留時間之增長速度比小處 理室更⑨Jl述寄生損失會在其他相當條件下出現，但在相 101113426 8 β⑤ 201248695 應較小的處理室内不會出現。寄生損失通常出現在生長區的 後部下游區域。此時，原本呈直線的生長分佈便會彎曲形成 所謂“耗竭曲線”。即使讓基板進行旋轉亦無法形成均勻生 長。遂使基板上出現層厚及層成分不均勻分佈的現象。 "High growth rate process in a SiC horizontal CVD reactor using HC1” , Microelectronic Engineering 83 (2006) 48 - 50 一文的作者描述了鹽酸在抑制矽成核方面的作用。201248695 VI. Description of the Invention: [Technical Field] The present invention relates to a device for depositing a II-VI or III-V semiconductor layer on one or more substrates, including a reactor housing and a gas mixture a gas supply device having a processing chamber disposed within the reactor housing, a susceptor disposed within the processing chamber for carrying the substrate, and heating for heating the susceptor to a temperature of the susceptor a device, an air intake mechanism assigned to the processing chamber, and an exhaust device for discharging reaction products and carrier gases out of the processing chamber, the air intake mechanism for use in a form of a Group V or Group VI component (particularly a hydride), a metal The processing gas of the organic Group II or Group III component and the halogen component is respectively fed into the processing chamber via the same carrier gas, and the gas mixing/gas supply device has a gas source for the metal organic component, for the V group or a gas source of a Group VI component (particularly a hydride) and a gas source for the halogen component, wherein the gas source is connected to the gas inlet mechanism through a transfer pipe having a control valve and a mass flow controller so that The metal organic component, the Group V or Group VI component (particularly a hydride) and the i component are separated from each other by a gas flow rate and, if appropriate, respectively, together with the carrier gas, into the heated processing chamber, wherein The control means for controlling the valves and the mass flow controller are used to deliver process gases of different compositions to the process chamber in a subsequent process step. The invention also relates to a method of depositing a Group II-VI or Group III-V layer on one or more substrates, wherein a metal-organic Group II or Group III component is provided in the gas mixture/air supply device, a Group V or Group VI component (particularly hydrogenation 3 101113426 201248695) and a processing gas for the dentate component, the at least one substrate is placed on a susceptor in the processing chamber, and the susceptor and the at least one processing chamber wall are heated to a base a seat temperature or a wall temperature, which is fed into the process chamber by means of an air intake mechanism, together with the carrier gas, at a gas flow rate separated from each other by a carrier gas, the metal organic component and the group V or group VI component (particularly a hydride) a pyrolysis reaction occurs on the surface of the substrate in the processing chamber to deposit a layer on the substrate, the element component weakening or suppressing the formation of parasitic particles of the gas phase towel, and reacting the reaction product together with the carrier gas via an exhaust device The processing chamber is discharged, wherein the processing gases of different compositions are fed into the processing chamber by successive control steps using a control device that controls the valve and the mass flow controller. [Prior Art] US 7,585,769 B2 describes similar devices and methods. It incorporates a family of semiconductor layers > on the substrate within the reactor housing. The process gas fed to the process chamber of the reactor housing contains a hydride (e.g., ammonia), a metal organic component (e.g., tris-gallium), and a functional component (e.g., hydrogen chloride). The apparatus has a spray-type air intake mechanism located vertically above the base, the base extending horizontally and carrying a substrate that is heated to a processing temperature by a corresponding heating device. The ii component is fed into the processing chamber alone or in combination with other process gases and prevents or inhibits the formation of particles in the gas phase within the processing chamber. DE 10 2007 009 145 A1 describes a device for depositing a crystal layer by MOCVD to deliver different process gases via three upper and lower stacked gas inlet zones. Wherein, the inlet zone adjacent to the susceptor conveys NH3, and the inlet zone adjacent to the top of the processing chamber conveys hydrochloric acid, and the metal in the inlet zone between the two conveys metal organic 101113426 4 201248695 points. Each process gas is supplied together with the carrier gas. No. 4,961,399 A describes a device for depositing a ΙΠ_ν family layer on a plurality of substrates arranged around the center of a rotationally symmetric processing chamber. An air intake mechanism is provided in the center of the processing chamber for transporting hydrides such as ΝΗ3, ASH3 or ΡΗ3. The air intake mechanism also feeds metal organic compounds (eg, TMGa, TMIn, or TMA1) into the processing chamber. Along with the above-mentioned process gas, there is also a carrier gas, in particular hydrogen, which enters the chamber. The base is heated from the bottom up. Heating can be carried out using thermal radiation, high frequency coupling or other means. DE 102 47 921 A1 describes an available heater arranged below the base. The processing chamber on such a CVD reactor extends horizontally. The lower portion of the reactor is limited by the susceptor and the upper portion is confined by the top plate. US 7,560,364 discloses an MOCVD process for feeding a metal organic base material together with an hydride to a processing chamber. Reduce lattice defects by feeding hydrochloric acid. That is, the dislocation defects which are linearly diffused through the layer in the direction perpendicular to the surface during the layer growth process are reduced. The addition of hydrochloric acid produces a small etch pit that gradually becomes sharp. The dislocation lines are vertically diffused toward the inclined facets of the etching pits, causing bending. DE 10 2004 009 130 A1 describes a M0CVD reactor comprising a processing chamber arranged symmetrically around a central air intake mechanism. Trimethylgallium and ammonia are fed together with hydrogen. The publication also provides a theoretical description of the growth process. The process gas is sent to the process chamber at a certain inlet temperature (at room temperature or below 1 G (rc). The temperature at the top of the process chamber is maintained below 5 () 〇 <t top 101113426 5 201248695 temperature Under the condition, the substrate temperature is about looot: The above temperature can be floated up and down 5叱 to 1G (rc: depending on the processing gas or the desired treatment effect. In the front area close to the air intake mechanism The processing gas and the carrier gas of the processing chamber are heated. The heating is mainly performed by heat conduction. The heat is sent to the gas phase by contacting the carrier gas with the top of the processing chamber or the susceptor. The temperature of the susceptor is still at the top temperature, so the cold flowing gas is formed along the flow. The so-called "cold finger," that is, the treatment (4), which enters the processing chamber, is a space region for heating the carrier gas processing gas. The processing gas which is decomposed into the corresponding decomposition product after being heated is treated gas n; therefore, metal organic The compound is gradually decomposed into metal elements by intermediate products. For example, TMGa is decomposed into Ga by DMGa and MMGa. The degree of decomposition of the hydride is extremely low, so it needs to be processed during the process. Providing a hydride. The growth rate of (10) on the surface of the substrate is dependent on the amount of TMGa supplied. DEL 10 163 394 Al, DE 10 2006 018 515 A1 and US 2008/0132040 A1 describe the use of hydrochloric acid. After the coating step is completed, the processing chamber is re-etched and hydrochloric acid is used as a polling gas for transferring gallium or indium during the HVpE process. According to the existing s, the growth zone connecting the front zone is treated indoors. At least the region in which the steroid component is almost completely decomposed, that is, 'there is essentially only the cleavage product, that is, the metal atom in the gas phase. The decomposition products are diffused from the volume flow above the substrate in the growth zone toward the surface of the wire. And the site is completely decomposed and the stoichiometry of the gasification occurs. The existing theory uses the boundary layer to expand the 101113426 6 201248695 dispersion model to describe the growth. Using a certain supply (ie, partial pressure) of the m-group component, the decomposition products are on the substrate. The surface is crystallized by thermal deposition. The surface of the substrate is also in a single crystal state. P. Fini et al. Japanese Journal of applied physics 37 (1998) 4460 or D. D. Koleske Journal of Chrystal Growth 242 (2002) 55 shows that when the total pressure is lower (for example, above 400 mbar), the total pressure is lower (for example, below 2 mbar). The deposited layer has more crystal defects. Specifically, the latter has a smaller dislocation density and does not embed impurities. Therefore, it seems that the total pressure can be increased to increase the crystal quality. However, the results of the study indicate that an increase in total pressure will significantly reduce the growth rate. In addition, increasing the total pressure also causes parasitic processes (especially parasitic growth), so the production process to date has only operated with low pressure. US 2008/0050889 proposes a simulation algorithm for determining corresponding processing parameters with the aim of suppressing the formation of parasitic particles in a shower reactor. DE 10 2004 009 130 A1, by means of its Fig. 2, shows that the growth rate in the growth zone decreases with the flow direction. A linear reduction in growth rate can be achieved with a corresponding process. The reason for the decrease in the growth rate is that the gas phase is continuously depleted due to the growth process. When the substrate is rotated by the rotary substrate holder, the lateral unevenness which occurs due to the depletion effect of the growth rate can be compensated for. The above-described experiment conducted under conditions of high total pressure could not achieve a linear decrease in the growth rate. Specifically, particles that do not contribute to growth and are directly input to the exhaust mechanism with the gas flow are formed in the downstream region of the gas phase. Therefore, the first 101113426 7 201248695 pre-technical increase in the dragon can only produce unusable results in the production of miscellaneous. According to the gas phase reaction model, it is in the true sense of the processing chamber. The adduct of the metal organic component and the hydride is formed in the front region of the long region. These adducts form nucleating seeds that produce particles in the gas phase that do not contribute to layer growth and are carried out of the processing chamber by the carrier gas. When using a hydrogen odor, the particle formation is attenuated by the hydrogen enrichment. In addition, the retention time of the salty sentence (ie, increasing the flow rate) can be used to weaken the growth rate of the teacher shape in the metal component (especially TMGs), the growth rate and the organic component. The flow rate is linearly related. However, if the partial pressure of the τ hall is too high, the saturation phenomenon will be stopped. The step-by-step increase of the partial pressure will even lower the growth rate. Growth = sub-linear change with partial pressure after partial pressure separation, which is related to the total pressure and residence time of the process gas in the treatment chamber and to the dilution process. The cause of the decrease in saturation, i.e., the growth rate, is parasitic loss, for example, dimer formation, nucleation, and gas phase condensation. Increasing the growth rate of the semiconductor layer can increase its yield, which is of great significance for industrial production. Where σ is wide = the chamber is rotationally symmetrical around the central air intake mechanism, the prolonged process gas pre-zone 'i.e., prolonging the distance that the process gas covers the substrate after exiting the air intake mechanism will cause the base of the process chamber The over-proportion increases. Therefore, the growth time of the residence time in the processing chamber for large-area substrates is 9 Jl. The parasitic loss will occur under other equivalent conditions, but it will not be in the processing room of the phase 101113426 8 β5 201248695. appear. Parasitic losses usually occur in the lower downstream region of the growth zone. At this point, the original linear growth distribution bends to form a so-called "depletion curve." Even if the substrate is rotated, uniform growth cannot be achieved. The phenomenon that the layer thickness and the layer composition are unevenly distributed appears on the substrate. "High growth rate process in a SiC horizontal CVD reactor using HC1", Microelectronic Engineering 83 (2006) 48 - 50 The authors describe the role of hydrochloric acid in inhibiting nucleation of ruthenium.
Effect of HC1 addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperaturesEffect of HC1 addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures
Journal of applied physics 104,053517 (2008) —文的作者同 樣描述了添加鹽酸流量對沉積含石夕層的作用。 "Prevention of In droplets formation by HC1 addition during metal organic vapor phase epitaxy of InN”，Applied physics letters 90, 161126 (2007)” 一文的作者描述了 ci(特 別是鹽酸)在採用NH3及TMIn為處理氣體的晶體沉積過程 中的作用。 【發明内容】 本發明之目的在於採取措施以加大基座之承载基板的有 效面積。 本發明用以達成上述目的之解決方案為本發明的申請專 利範圍’其巾’魏氣機構具有至少三個彼此隔開的進氣 區’其中，在一連接V族或VI族成分的氣體源之V族或 101113426 9 201248695 νι族進氣區與-連接該*素成分源之_素成分進氣區之間 設=一隔離氣體進氣區，其在輸送鹵素成分的過程中即不被 V私或VI族成分的氣體源供氣也不被齒素成分源供氣。此 外’經由該隔離氣體進氣區輪送該金屬有機成分或僅輸送一 種f月性氣體(如運載氣體）。為此，該隔離氣體進氣區連接或 可連接該金屬有機成分的氣體源。此時，該裝置共具有至少 三個彼此隔開的進氣區，其中，無法經由相鄰進氣區或相鄰 通道同時將氫化物及函素成分送入處理室。較佳該三進氣區 中的每個僅能將該三氣體成分中的唯—個送人處理室。作 為可選方案，亦可增設其他進氣區。_對該_及該等質 量流量控制器實施控制的控制襄置以前後相繼的處理步驟 將不同成分的處理賴“顯理室。該 冷卻裝置，該冷《置可對 ㈣H有 實施样為此，該等_的壁可m紐所有進氣區 “MW可將處理氣體輸人該處理室，該等處理 氣體在不存在函素成分的情 且…… ㈣况下會相互反應並例如在該生 ==面上形成堆積。該自素成分進氣區可以對寄 生生長加以抑制的方式鄰接該處理室之經加熱表面區段並 位於其上游。利用該冷卻裝置將該進氣機構冷卻至低於該等 處理—之分解溫度的進氣溫度。藉由流經該等冷卻通道的 冷卻液來實施冷卻。轉縣_㈣㈣置的各進氣區進 入該較佳在水平方向上受到穿流的處理室。其中，該處理氣 101113426 201248695 體流經一可混合該等處理氣體之前置區。該v族或％族成 分較佳採用氫化物，如砷化氫、磷化氫或（較佳）氨。因此， 該V族成分較佳採用沉積GaN用氮化合物。該_素成分採 用鹵化物’例如鹽酸等氫_化物，亦可採用特別是離子化的 純鹵素’例如Cl2。下面將以氫化物、TMGa以及鹽酸為例 對本發明進行闡述：在垂直間隔一定距離的不同平面上將氫 化物及鹽酸送入處理室，故而鹵素成分與鹽酸唯有在前置區 内與該進氣區間m平距離的地點方能接觸。該等氣體 在此接觸地點上已經過加熱，使得氣體溫度高於氫化物(例 如氨)與齒素成分(如妓)進行反應並產生縮合物（即氣化錄 等固體）的反應,皿度。_素成分與氫化物初次接觸的地點亦 可處於加合物形成區域内，即位於該處理室内的某個區域 内’其乳體溫度處於加合物形成溫度範圍内，上述處理氣體 採用TMGa及丽3時，該加合物形成溫度範圍為刚。。至 500 C。較佳利用最下方的平面將_素成分送入處理室。藉 此便可對該處理室之直接&於㈣素成分進氣區下游之區 域（即基板座d域)施加最大^素成分濃度。該基座之分配給 該前置區㈣加熱的壁在不存在时成分的情況下直接位 於生長區上游且生長率最高，該壁較佳連接該齒素成分進氣 區。因此’该基座之前置區在不存在函素成分的情況下會出 現堆積現象。送人該i素成分後便可防止在基座直接上方發 生寄生生長。根據該裝置的一種較佳實施方案，該氫化物進 101113426 11 201248695 氣區直接位於該處理室頂部下方。該處理室頂部及該基座皆 與該受冷卻之進氣機構熱絕緣。該處理室頂部可受到主動加 熱，為此，該處理室頂部設有專門加熱裝置。該處理室頂部 亦可僅受到被動加熱。此時，用一加熱裝置(例如水冷式射 頻線圈）加熱該基座，同時輻射出熱量從而加熱該處理室頂 部。該進氣機構可佈置於採用旋轉對稱結構之行星式反應器 的中央。該基座設有多個行星狀圍繞該進氣機構的圓盤狀基 板座，該等基板座承載一或多個基板並在生長過程中圍繞其 軸線旋轉。該自上而下供氣的進氣機構位於該處理室中央。 該進氣機構被亦可採用旋轉驅動的基座環形圍繞。該基座具 有多個凹槽，每個凹槽内嵌有一基板座，該基板座以承載於 一氣墊上的方式進行旋轉。由一專門氣體流實施旋轉驅動。 該基板座可承載一或多個基板。 不僅可沿水平方向經由彼此隔開進氣區送入處理氣體。亦 可經處理室頂部垂直將處理氣體送入處理室。為此，該進氣 機構呈喷淋頭(811〇〜61：1^&(1)狀。此實施方案中的處理室頂部 具有多個篩狀均勻分佈的排氣口。在有序排列的情況下’氫 化物進氣區、隔離氣體進氣區及鹵素成分進氣區分別以一排 氣口的形式佈置。其中一進氣區亦可分配有多個排氣口。在 此情況下，一組排氣口構成一進氣區。此時，任一鹵素成分 進氣區被由多個排氣口構成的一隔離氣體進氣區包圍。同 樣，每個氫化物進氣區皆被由多個排氣口構成的一隔離氣體 10Π13426 12 ⑤ 201248695 進氣區包圍。該進氣機構可具有多個 絕的腔室。每讎室”衫㈣定言^置且彼^氣密隔 與由該處理室頂㈣柄氣 〜祕官的通道 :冷卻腔至以便對該處理室頂部實施冷卻。該等處理 的方式從各排氣°進人該處理室，其中，該 該錢成分被隔離氣體隔開。該隔離氣體可指惰性 =了_族成分連同該隔離氣體送入該處理室。亦 Μ II域分連同該_素成分送人該處理室。 對性地將該㈣成分送人該加合物形賴積、即該 至内形成加合物的區段來減弱粒子形成。藉此可將生長 耗竭剖面均勾化。可對耗竭剖面進行調節，使得氣相 Mnu域分金狀纽錢μ魏g體呈直線 降。该等處理氣體停留於該處理室内的平均停留時間可達 到u秒以上。該生長區在流動方向上的長度可大於15〇 職。氣相耗竭在此距離内的走向呈直線，故而生長率亦隨 與該進氣機㈣直線下降。可透過旋轉該等基板座來 對此氣相耗竭即生長率的不均勻走向加以補償。將鹽酸氣相 摻入加合物形成體積可減弱加合物形成、成核以及粒子形 成。其中，可根據在不存在鹽酸的情況下將會形成的加合物 量來對氣相摻入加合物形成體積的鹽醆進行調整。在此情況 下’僅需將總氣體量低於250 ppm或含量為金屬有機成分之 以下的氣相鹵素成分實施摻雜即可。本發明意外發現， 101113426 13 201248695 早，時間内需要添加的鹽酸量最大僅為單位時間内送入處 =之族或ΙΠ族成分量的十分之—。該金屬有機成分較 Λ 曱基鎵、二甲基鋁或三甲基銦。該氫化物較佳採用 ΝΗ3 ' AsHt ^ PR ,r 一二 又叫3。採用TMG、NH3或鹽酸為處理氣體時， 經由遠隔離氣料氣區流人該處理室且*含氫化物及齒素 成分的隔離氣體流量防止縮合形成氣相中的氣化銨 。確切而 P氨與氣化氫唯有在氣體溫度高於與總壓相關之氣化銨形 成溫度的地點方能接觸。該方法除用於沉積GaN外亦可用 於/儿積AIN、inP或混合晶體。其基板溫度亦高於削〇。。。 /儿積含In化合物時的基板溫度低於麵。c。將錢成分懷 佳鹽酸)射人加合物形成體積對氣相中加合物的產生過程發 揮姓刻作用，故而所形成的奈米粒子大大少於未添加鹽酸的 It况，如此便可延長處理氣體在處理室内的停留時間，因 此送入鹽酸可達到延長流動距離及實現線性耗竭剖面的目 的。透過上述方式便可增大基座之可用來承載待塗佈基板的 有效面積。除鹽酸或其他氫鹵化物外亦可採用純鹵素，例如 ci2 〇 送入鹵素成分（特別是鹽酸）亦可改良所沉積晶體之形 態。可提向晶體内的載子移動率。 行星式反應器中設有多個環形圍繞一中央進氣機構佈置 的旋轉驅動基板座，先前技術中的行星式反應器中，必須將 氣體混合物内相對較大流量（即相對較大密度）的氫化物（如 ^1113426 201248695 nh3)送入處理室。基板座必須與進氣機構間隔相對較大距 離。在生長過程中採用該鹵素成分(特別是鹽酸)便可減少總 流量從而減少運載氣體流量，且延長停留時間不會引起迄今 為止所出現的寄生過程故而不會影響層品質。因此，可在處 理室内僅對六個或六個以下緊鄰佈置且直徑皆為200 mm的 圓形基板以相同形式實施塗層。 透過縮短處理氣體在處理室内的停留時間並減少總流量 亦可對處理室的高度施加影響，例如，可增大處理室高度以 方便基板的放置與取出。 【實施方式】 下面參照附圖對本發明進行詳細說明。 圖1所示混氣/供氣裝置34具有氫化物源30,其在本實施 例中係指氨源。該混氣/供氣裝置另具金屬有機成分源31， 本實施例中的金屬有機成分係指三曱基鎵。另設i素成分之 鹵素成分源32，本實施例中的鹵素成分係指鹽酸。混氣/供 氣裝置34還具有運載氣體源33,此處之運載氣體係指氫氣。 氣體源30、31、32、33皆實施為貯氣槽。亦可為貯氣瓶 或起泡器。每個氣體源30、31、32皆連接一可被閥門26、 27、28、29關閉的排氣管，該等閥門皆可被未繪示控制裝 置通斷。閥門26、27、28、29下游設有用以對運載氣體流 以及對氫化物、金屬有機成分或_素成分的流動進行調節的 質量流量控制器22、23、24、25。質量流量控制器24用於 101113426 15 201248695 對鹵素成分氣體流進行調節，用該運載氣體流稀釋該鹵素成 分氣體流，經由進氣機構7之ii素成分進氣區10之鹵素成 分進氣管21送入該鹵素成分氣體流。質量流量控制器23 用於對（例如）被源於起泡器的運載氣體所輸送的金屬有機 成分的質量流量進行調節。質量流量控制器25用於對上述 氣體流進行稀釋並經金屬有機成分進氣管20通向金屬有機 成分進氣區9。金屬有機成分進氣區9構成隔離氣體進氣區。 質量流量控制器22用於對氫化物質量流量進行調節，同 樣用運載氣體流量稀釋該質量流量並可經氫化物進氣區8 之氫化物進氣管19送入該質量流量。 就流動方向而言位於金屬有機成分進氣區9上游的金屬 有機成分進氣管20上以某種方式設置閥門27及質量流量控 制器23，使得在經由鹵素成分進氣區10輸送鹵素成分過程 中，源於鹵素成分源32的鹵素成分或源於氫化物源30的氫 化物無法穿過金屬有機成分進氣區9。位於氣化物進氣區8 上游之氫化物進氣管19及位於鹵素成分進氣區1〇上游之幽 素成分進氣管21採用某種方案，使得源於氣體源3〇的氮化 物及源於氣體源32的鹵素成分皆無法進入隔離氣體進氣區 9,唯有隔離氣體方可流經隔離氣體進氣區9,該隔離氣體 為惰性氣體，即運載氣體以及金屬有機成分。 上述進氣區8、9、10皆屬於一進氣機構且垂直叠置（炎閱 DE 10 2004 009 130 A1) 〇該進氣機構7經過冷卻處理上 。吕亥 101113426 16 201248695 進氣機構7具有隔壁12、13、上壁l4 11之下壁。亦可使所有隔壁12、η、l4 ^施為冷卻液通心 具有冷卻液通道。較佳僅在錢機構< 騎·冷方案且 體通道，亦即，除液體通道U外亦在ρ•反及頂板上設置液 體通道。藉此便可使其他隔壁具有最低4區域ΰ又置液 m、、 , *錢―厚度。進氣機構 7構成進氣區E。可利用冷卻水將進氣 250Ϊ或3G(TC的溫度水平上。較佳將進〃 7保持在低於 α“。 平又佳將進軋機構7的溫度保 持在150 C以下以防止金屬有機成分發生分解。 該等垂直層狀疊置的進氣區8、9、1〇:水平延伸度上連 接有處理室1，該處理室之底部由基座2構成，頂部6平行 於基座2。在此情況下，該三疊置進氣區8、9、⑺皆在〆 理室1的整個高度上延伸，其中，i素成分進氣區H)緊= 處理室底部’ &化物進氣區8緊挨處理室1頂部6，隔離氣 體進氣區9則位於其間。該等疊置進氣區8、9、H)的高度 值可以相同。亦可不同。處理室高度约為20 mm時，氫: 物進氣區8、隔離氣體進氣區9及函素成分進氣區1〇之高 度比可為1:2:卜亦可採用1:3:1的高度比。 進氣區E沿流動方向連接前置區v ^前置區v在基座2 之經加熱的壁區段15上延伸。利用射頻加熱器18加熱基座 2 亥射頻加熱ϋ實施為佈置於基座2下方之水冷式加熱盤 官。藉此來在由石墨或另―傳導材料製成的基座2中產生渴 Μ而為基座2加熱。根據具體處理步驟將基座2加熱至不 101113426 17 201248695 同溫度，舉例而言，沉積晶種層GaN/AIN時加熱至550°C， 沉積η型GaN層時加熱至1050°C，沉積p型GaN層時加熱 至900°C，沉積InGaN層時加熱至750°C，沉積AlGaN層時 加熱至1050°C，沉積光電子用途（紫外LED)的層時加熱至 1400°C。位於基座2對面之頂壁6在未受主動加熱情況下的 溫度約低200°C。頂壁6經主動加熱後，溫差有所減小。亦 可為零。亦可將處理室頂部6加熱至高於基座2的溫度。 前置區V下游設有生長區G’生長區内設有一或多個基 板座3。圖1之剖視圖僅顯示一圓盤狀基板座3，該基板座 嵌在基座2的凹槽5内並承載於一氣墊上，該基板座在實施 該方法的過程中進行旋轉。基板座3承載一待塗佈基板4， 其基板溫度Ts通常可設置於900°C至1100°C之間。該高溫 基板座2將處理室1加熱至溫度Tc。處理室1中央的氣體 溫度TB介於處理室頂部溫度Tc與基板溫度Ts之間。 生長區G連接有排氣區A，該排氣區内設有排氣裝置16, 該排氣裝置連接真空泵17以便將處理室内的總氣壓調節至 數毫巴與大氣壓力之間。 圖1所示處理室具有圓形基座2,其以同心的方式包圍同 樣呈圓對稱的進氣機構7。 隔壁12、13間的垂直距離規定了金屬有機成分進氣區9 的高度，採用相應垂直距離以便產生圖1中虛線所示的擴散 邊界層D。擴散邊界層D表示前置區V内源於鹵素成分進 101113426 18 201248695 氣區ίο之鹵素成分向上朝氫化物流量進行擴散以及經由氫 化物進氣區8所輸入的氫化物向下朝鹵素成分進行擴散所 達到的邊界。其中’該等氫化物及_素成分擴散進入隔離氣 體流量並經由隔離氣體進氣區9進入處理室。因此’佈置於 氫化物進氣區8與素成分進氣區10之間的進氣區9構成 隔離氣體進氣區’亦有金屬有機成分及運載氣體經該隔離氣 體進氣區進入處理室。 僅予定性顯示的上擴散邊界層D與下擴散邊界層D在前 置區V的某個區域Μ相遇，其中，大氣壓力下的氣體溫度 ΤΒ大於338。(： ’且ΝΗ3與鹽酸不再反應形成氯化銨。該處 理室内的總壓有所下降時，該氣體溫度亦會下降，例如當總 壓降至10 mbar時，氣體溫度降至22〇°C。 圖2為基座溫度Ts、大致處於處理室蚕直中心之氣體的 溫度TB以及處理室頂部溫度心各自在處理氣體流動方向上 的溫度走向◎顯然，該氣體溫度在前置區V内最低。故而 在該前置區之大致中央位置 形成冷指。冷指末端（㈣f成 分與氫化物接觸的區域）在不存在鹵素成分立採用氨氣/、 TMGa的情況下形成加合物，等加合物形成H生粒子的 成核晶種，該等成核晶種在不存在_素成分的情況下結° = 1 III族金屬原子從而影響層生長。鹵素成勿以與虱 、 間隔開的方式進入，故而㈣成分就义藝技術而言射入位於 區域Μ内的加合物形成體積。用鹵素成分對該加合物形成 101113426 19 201248695 體積進行摻雜’其中，使㈣的總氣體量達到最大25〇卯爪 抑或使進人處理室的鹽酸流量低於金屬有機成分氣體流量 的10%即可。 如圖2所示’基座2的溫度ts在前置區乂的區域内直線 上升、在生長區G的區軸大致怪定並在純區的區域内 重新下降。輻射加熱之處理室頂部6的溫度Tc同樣在前置 區V的區域内持續上升、在生長區G的區域内保持怪定並 在排氣區A的區域内重新下降。氣體溫度&的走向與溫度Journal of applied physics 104, 053517 (2008) - The authors of the paper also describe the effect of the addition of hydrochloric acid flow on the deposition of the tarpaulin. "Prevention of In droplets formation by HC1 addition during metal organic vapor phase epitaxy of InN", Applied physics letters 90, 161126 (2007)" The authors describe that ci (especially hydrochloric acid) is treated with NH3 and TMIn as a process gas. The role of crystal deposition. SUMMARY OF THE INVENTION It is an object of the present invention to take measures to increase the effective area of a carrier substrate of a susceptor. The solution to achieve the above object of the present invention is the patent application scope of the present invention, the 'air towel' Wei gas mechanism has at least three air inlet regions spaced apart from each other, wherein a gas source connected to a group V or group VI component V group or 101113426 9 201248695 νι family air intake zone and - connected to the source component of the _ element component between the gas inlet zone = an isolation gas inlet zone, which is not V in the process of transporting halogen components The gas source of the private or Group VI component is not supplied by the source of the dentate component. Further, the metal organic component is polled or only a f-month gas (e.g., carrier gas) is delivered via the isolated gas inlet region. To this end, the isolation gas inlet region is connected to or can be connected to a source of gas of the metal organic component. At this time, the apparatus has a total of at least three air intake regions spaced apart from each other, wherein the hydride and element components cannot be simultaneously fed into the processing chamber via the adjacent air inlet regions or adjacent channels. Preferably, each of the three gas inlet zones is capable of delivering only one of the three gas components to the processing chamber. As an option, additional air intake areas can be added. _ The control of the _ and the mass flow controllers is controlled by successive processing steps to treat the different components in the "sensing room. The cooling device, the cold "can be used" (four) H has been implemented for this purpose The wall of the wall can be used to input the processing gas into the processing chamber, and the processing gases react with each other in the absence of a functional component and, for example, in the case Raw == formed on the surface. The self-priming component inlet zone may abut the upstream of the heated surface section of the processing chamber in a manner that inhibits the growth of the growth chamber. The air intake mechanism is cooled by the cooling device to an intake air temperature lower than a decomposition temperature of the process. Cooling is carried out by means of a coolant flowing through the cooling channels. Each of the intake areas of the county _ (four) (four) enters the processing chamber which is preferably subjected to the flow in the horizontal direction. Wherein, the process gas 101113426 201248695 flows through a pre-zone where the process gases can be mixed. Preferably, the v or % component is a hydride such as arsine, phosphine or (preferably) ammonia. Therefore, the group V component is preferably a nitrogen compound for depositing GaN. The elemental component is a halide such as a hydrogen compound such as hydrochloric acid, and a particularly halogenated pure halogen such as Cl2 can also be used. In the following, the invention will be exemplified by hydride, TMGa and hydrochloric acid: the hydride and hydrochloric acid are fed into the treatment chamber on different planes vertically spaced apart by a certain distance, so that the halogen component and the hydrochloric acid are only in the pre-zone and the The location of the gas interval m is close to the location. The gases have been heated at the point of contact such that the gas temperature is higher than the reaction of the hydride (eg, ammonia) with the dentate component (eg, hydrazine) and produces a condensate (ie, a solid such as a gasification record). . The location where the _ element component is in initial contact with the hydride may also be in the adduct formation region, that is, in a certain region of the treatment chamber, whose milk temperature is within the adduct formation temperature range, and the treatment gas is TMGa and At 3 o'clock, the adduct formation temperature range is just. . Up to 500 C. Preferably, the _ element component is fed into the processing chamber using the lowermost plane. Thereby, the maximum concentration of the constituents of the processing chamber directly/amplitude to the region downstream of the (four) component inlet region (i.e., the substrate holder d domain) can be applied. The susceptor is assigned to the pre-zone (4) heated wall which is directly upstream of the growth zone and has the highest growth rate in the absence of composition, the wall preferably connecting the dentate component inlet zone. Therefore, the front region of the susceptor will accumulate in the absence of a functional component. By sending the ingredients, it is possible to prevent parasitic growth directly above the susceptor. According to a preferred embodiment of the apparatus, the hydride enters the 101113426 11 201248695 gas zone directly below the top of the processing chamber. The top of the processing chamber and the base are both thermally insulated from the cooled intake mechanism. The top of the chamber can be actively heated, for which purpose a special heating device is placed on top of the chamber. The top of the chamber can also be only passively heated. At this time, the susceptor is heated by a heating means (e.g., a water-cooled RF coil) while radiating heat to heat the top of the processing chamber. The air intake mechanism can be disposed in the center of a planetary reactor employing a rotationally symmetrical structure. The base is provided with a plurality of disk-shaped substrate holders that are orbiting around the air intake mechanism, the substrate holders carrying one or more substrates and rotating about their axes during growth. The top-down air supply air intake mechanism is located in the center of the processing chamber. The air intake mechanism is also annularly surrounded by a base that is rotationally driven. The pedestal has a plurality of recesses, each of which is embedded with a substrate holder that is rotated to be carried on an air cushion. The rotary drive is carried out by a special gas flow. The substrate holder can carry one or more substrates. The process gas can be fed not only in the horizontal direction but also through the air intake regions spaced apart from each other. The process gas can also be fed vertically into the processing chamber through the top of the processing chamber. To this end, the air intake mechanism is in the form of a shower head (811〇~61:1^&(1). The top of the processing chamber in this embodiment has a plurality of sieve-like uniformly distributed exhaust ports. The hydride inlet region, the isolation gas inlet region, and the halogen component inlet region are respectively arranged in the form of an exhaust port. One of the inlet regions may also be assigned a plurality of exhaust ports. In this case, A group of exhaust ports constitute an intake region. At this time, any halogen component intake region is surrounded by an isolation gas inlet region composed of a plurality of exhaust ports. Similarly, each hydride inlet region is An isolation gas consisting of a plurality of exhaust ports 10Π13426 12 5 201248695 is surrounded by an air intake zone. The air intake mechanism can have a plurality of permanent chambers. Each of the chambers (4) is fixed and the air is separated. From the top of the processing chamber (four) handle gas to the channel of the secret officer: cooling chamber to cool the top of the processing chamber. The manner of processing is from the respective exhaust gas into the processing chamber, wherein the money component is isolated The gas is separated. The insulating gas may refer to inertia = the group component is sent together with the insulating gas. And the II domain is sent to the processing chamber together with the _ element component. The component (4) is sexually sent to the adduct, ie, the segment forming the adduct to weaken the particle formation. In this way, the growth depletion profile can be forked. The depletion profile can be adjusted so that the gas phase Mnu domain is linearly descended. The average residence time of the treatment gases staying in the treatment chamber It can reach more than u seconds. The length of the growth zone in the flow direction can be greater than 15 。. The trend of gas phase depletion in this distance is straight, so the growth rate also decreases linearly with the air intake (4). The substrate holder compensates for the gas phase depletion, that is, the uneven growth rate. The gas phase incorporation into the adduct to form a volume can weaken the formation, nucleation and particle formation of the adduct. The amount of adduct that will form in the presence of hydrochloric acid to adjust the volume of the salt formed by adducting the gas phase into the adduct. In this case, 'only need to reduce the total gas amount to less than 250 ppm or the content of the metal organic component. Lower gas phase The composition of the element can be doped. The invention unexpectedly finds that 101113426 13 201248695 is needed in the early time, and the amount of hydrochloric acid to be added is only a fraction of the amount of the group or the steroid component per unit time. The composition is more than 曱 镓 gallium, dimethyl aluminum or trimethyl indium. The hydride is preferably ΝΗ 3 ' AsHt ^ PR , r 1-2 is also called 3. When using TMG, NH3 or hydrochloric acid as the processing gas, by far isolation The gas-gas zone flows into the treatment chamber and the flow rate of the isolating gas containing the hydride and dentate components prevents condensation from forming vaporized ammonium in the gas phase. Specifically, P ammonia and gasification hydrogen are only higher in the gas temperature than in the total The pressure-related vaporized ammonium formation temperature can only be contacted. This method can be used for AIN, inP or mixed crystals in addition to GaN. The substrate temperature is also higher than the cut. . . The substrate temperature when the In compound is contained is lower than the surface. c. The formation of the volume of the adduct by the money component Huaikai hydrochloric acid plays a role in the production process of the adduct in the gas phase, so the formed nanoparticles are much smaller than the It without the addition of hydrochloric acid, so that the length can be prolonged. The residence time of the treatment gas in the treatment chamber, so the introduction of hydrochloric acid can achieve the purpose of extending the flow distance and achieving a linear depletion profile. In this way, the effective area of the susceptor that can be used to carry the substrate to be coated can be increased. Pure halogen can be used in addition to hydrochloric acid or other hydrohalides. For example, ci2 送 can be added to a halogen component (especially hydrochloric acid) to improve the morphology of the deposited crystal. The carrier mobility can be raised into the crystal. The planetary reactor is provided with a plurality of rotary drive substrate holders arranged annularly around a central air intake mechanism. In the prior art planetary reactors, a relatively large flow rate (i.e., relatively large density) in the gas mixture must be The hydride (eg, ^1113426 201248695 nh3) is sent to the processing chamber. The substrate holder must be spaced a relatively large distance from the air intake mechanism. The use of the halogen component (especially hydrochloric acid) during the growth process reduces the total flow rate and reduces the carrier gas flow rate, and the extended residence time does not cause the parasitic process that has occurred so far without affecting the layer quality. Therefore, the coating can be applied in the same form to only six or six of the circular substrates immediately adjacent to each other and having a diameter of 200 mm in the treatment chamber. By reducing the residence time of the process gas in the process chamber and reducing the total flow rate, the height of the process chamber can also be affected. For example, the height of the process chamber can be increased to facilitate placement and removal of the substrate. [Embodiment] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. The aeration/gas supply unit 34 shown in Fig. 1 has a hydride source 30, which in this embodiment refers to an ammonia source. The gas mixture/air supply device additionally has a metal organic component source 31, and the metal organic component in the present embodiment means trimethyl gallium. Further, a halogen component source 32 of the i component is used, and the halogen component in the present embodiment means hydrochloric acid. The aeration/gas supply unit 34 also has a carrier gas source 33, where the carrier gas system refers to hydrogen. The gas sources 30, 31, 32, 33 are all implemented as a gas storage tank. It can also be a gas cylinder or a bubbler. Each of the gas sources 30, 31, 32 is connected to an exhaust pipe that can be closed by valves 26, 27, 28, 29, all of which can be switched on and off by means not shown. Downstream of the valves 26, 27, 28, 29 are mass flow controllers 22, 23, 24, 25 for regulating the flow of the carrier gas and the flow of hydride, metal organic components or components. The mass flow controller 24 is used for 101113426 15 201248695 to adjust the flow of the halogen component gas, and the halogen component gas stream is diluted with the carrier gas stream, and the halogen component intake pipe 21 of the intake region 10 via the ii component of the intake mechanism 7 The halogen component gas stream is fed. The mass flow controller 23 is used to regulate, for example, the mass flow rate of the metal organic components delivered by the carrier gas from the bubbler. The mass flow controller 25 is for diluting the above gas stream and passing it through the metal organic component intake pipe 20 to the metal organic component inlet region 9. The metal organic component inlet region 9 constitutes an isolated gas inlet region. The mass flow controller 22 is operative to regulate the hydride mass flow, and the mass flow is also diluted with the carrier gas flow and can be fed to the mass flow through the hydride inlet tube 19 of the hydride inlet zone 8. The valve 27 and the mass flow controller 23 are disposed in some manner on the metal organic component intake pipe 20 upstream of the metal organic component inlet region 9 in terms of flow direction, so that the halogen component is transported through the halogen component inlet region 10. Among them, the halogen component derived from the halogen component source 32 or the hydride derived from the hydride source 30 cannot pass through the metal organic component inlet region 9. The hydride gas inlet pipe 19 located upstream of the vapor gas inlet region 8 and the gas phase component inlet pipe 21 located upstream of the halogen component gas inlet region 1 have a scheme such that the nitride source and source originating from the gas source 3〇 The halogen component of the gas source 32 cannot enter the isolation gas inlet region 9, and only the isolation gas can flow through the isolation gas inlet region 9, which is an inert gas, that is, a carrier gas and a metal organic component. The above-mentioned intake areas 8, 9, 10 belong to an air intake mechanism and are vertically stacked (Yan DE 10 2004 009 130 A1). The air intake mechanism 7 is subjected to a cooling process. Lu Hai 101113426 16 201248695 The air intake mechanism 7 has partition walls 12, 13 and a lower wall of the upper wall l4 11 . It is also possible to apply all of the partition walls 12, η, l4^ as a coolant core having a coolant passage. Preferably, only in the money mechanism < riding and cooling scheme and body passage, that is, in addition to the liquid passage U, a liquid passage is also provided on the ρ·reverse and top plate. In this way, the other partition walls have the lowest 4 zones and the liquid m, , , * money - thickness. The intake mechanism 7 constitutes an intake area E. The cooling water can be used to bring the intake air to 250 Ϊ or 3 G (the temperature level of the TC. It is preferable to keep the enthalpy 7 below α". The temperature of the rolling mechanism 7 is kept below 150 C to prevent the metal organic component. Decomposition occurs. The vertically stacked air inlet regions 8, 9, 1 are connected to the processing chamber 1 in a horizontal extent, the bottom of the processing chamber being constituted by the base 2, and the top portion 6 being parallel to the base 2. In this case, the three stacked intake regions 8, 9, and (7) all extend over the entire height of the processing chamber 1, wherein the i-component intake region H) is tight = the bottom of the processing chamber & The zone 8 is next to the top 6 of the processing chamber 1 and the isolated gas inlet zone 9 is located therebetween. The height values of the stacked inlet zones 8, 9, H) may be the same or different. The height of the process chamber is about 20 mm. At the time, the height ratio of the hydrogen inlet region 8, the isolation gas inlet region 9 and the elemental component inlet region may be 1:2: a height ratio of 1:3:1 may also be used. E is connected in the flow direction to the front region v ^ the front region v extends over the heated wall section 15 of the susceptor 2. The radiant heater 18 is used to heat the susceptor 2 A water-cooled heating plate placed under the susceptor 2, thereby generating a thirst in the susceptor 2 made of graphite or another conductive material to heat the susceptor 2. The susceptor 2 is heated according to specific processing steps. To 101113426 17 201248695 The same temperature, for example, is heated to 550 ° C when depositing the seed layer GaN / AIN, heated to 1050 ° C when depositing the n-type GaN layer, and heated to 900 ° C when depositing the p-type GaN layer, The InGaN layer is heated to 750 ° C, the AlGaN layer is heated to 1050 ° C, and the photoelectron (UV LED) layer is heated to 1400 ° C. The top wall 6 opposite the susceptor 2 is not actively heated. The temperature in the case is about 200 ° C. After the active heating of the top wall 6 , the temperature difference is reduced. It can also be zero. The top of the treatment chamber 6 can also be heated to a temperature higher than the temperature of the susceptor 2 . One or more substrate holders 3 are provided in the growth zone G's growth zone. The cross-sectional view of Fig. 1 shows only a disk-shaped substrate holder 3 embedded in the recess 5 of the base 2 and carried on an air cushion. The substrate holder is rotated during the implementation of the method. The substrate holder 3 carries a substrate 4 to be coated, The plate temperature Ts can generally be set between 900 ° C and 1100 ° C. The high temperature substrate holder 2 heats the process chamber 1 to a temperature Tc. The gas temperature TB in the center of the process chamber 1 is between the process chamber top temperature Tc and the substrate temperature Ts The growth zone G is connected to an exhaust zone A in which an exhaust device 16 is provided, which is connected to a vacuum pump 17 to adjust the total gas pressure in the process chamber to between a few millibars and atmospheric pressure. The processing chamber shown in Fig. 1 has a circular base 2 which encloses the equally circularly symmetrical inlet means 7 in a concentric manner. The vertical distance between the partitions 12, 13 defines the height of the metal-organic component inlet region 9, The respective vertical distances are such as to produce the diffusion boundary layer D shown by the dashed line in FIG. The diffusion boundary layer D indicates that the halogen component of the front region V is derived from the halogen component into the 101113426 18 201248695 gas region, and the halogen component is diffused upward toward the hydride flow rate and the hydride input through the hydride gas inlet region 8 is directed downward toward the halogen component. The boundary reached by diffusion. Where the hydride and _ element components diffuse into the isolated gas flow and enter the processing chamber via the isolating gas inlet region 9. Therefore, the intake region 9 disposed between the hydride inlet region 8 and the prime component inlet region 10 constitutes an isolating gas inlet region. The metal organic component and the carrier gas enter the processing chamber through the separator gas inlet region. The upper diffusion boundary layer D and the lower diffusion boundary layer D, which are only preliminarily shown, meet in a certain region of the front region V, wherein the gas temperature 大气 at atmospheric pressure is greater than 338. (: 'And ΝΗ3 and hydrochloric acid no longer react to form ammonium chloride. When the total pressure in the treatment chamber decreases, the temperature of the gas also decreases. For example, when the total pressure drops to 10 mbar, the gas temperature drops to 22 〇. C. Figure 2 is the susceptor temperature Ts, the temperature TB of the gas substantially at the center of the processing chamber, and the temperature trend of the temperature at the top of the processing chamber in the flow direction of the processing gas. Obviously, the gas temperature is in the pre-region V. The cold finger is formed at a substantially central position of the front region. The end of the cold finger (the region where the (f) f component is in contact with the hydride) forms an adduct in the absence of a halogen component and ammonia gas, TMGa, etc. The adduct forms a nucleating seed of the H-forming particles, and the nucleating seed crystals form a metal atom of the group III in the absence of a _ element component to affect the layer growth. The halogen is not separated from the ruthenium. The way of entering, therefore, the component (4) is injected into the volume formed by the adduct in the region 就. The composition of the adduct is 101113426 19 201248695 with a halogen component, wherein the total gas amount is (4) A maximum of 25 jaws is reached or the flow rate of hydrochloric acid entering the treatment chamber is less than 10% of the flow rate of the metal organic component gas. As shown in Fig. 2, the temperature ts of the susceptor 2 rises linearly in the region of the front region 乂The zone axis of the growth zone G is substantially strange and falls again in the zone of the pure zone. The temperature Tc of the top portion 6 of the radiant heating process chamber also continues to rise in the region of the pre-zone V, in the region of the growth zone G. Keep strange and fall again in the area of exhaust zone A. Gas temperature & direction and temperature
Ts及Tc大致相同。但其在前置區乂内的斜度大於處理室頂 部6的溫度Tc。該氣體溫度自區域M開始方超過處理室頂 部溫度Tc。 圖3為生長率在流動方向上的定性走向，其中，實線表示 未添加鹽酸，虛線表示添加了鹽酸，生長率曲線的走向與氣 相中II族或III族成分金屬之分壓的走向大體一致。如圖所 示’未添加鹽酸時生長率Γ的最大值位於前置區^^之直接位 於生長區G上游的區域（即混氣區Μ)内。未添加鹽酸時生長 率r或金屬成分之耗竭曲線在生長區G内並非呈直線，當基 板在沉積過程中旋轉時，此點導致不均勻生長現象。基板邊 緣區域的層厚大於基板中央。 送入鹵素成分後，基座2之高溫壁區段15之上表面上方 會形成相對較高的_素成分濃度。該齒素成分(如鹽酸)可發 揮表面蝕刻的作用，從而減弱高溫前置區15中的寄生生 101113426 201248695 長。生長率的最大值沿流動方向向下位移。同時也使耗竭曲 線呈直線。此種直線走向亦與添加鹽酸對加合物形成之抑制 作用有關。 ® 4為基座2的俯視圖’其中，多個基板座3環形圍繞該 中央式進氣機構7佈置。基板座3亦可採用更大直徑以便該 等基板座3以近乎接觸的方式佈置。元件㈣v表示環形 圍繞進氣機構7的刚置區V ’言亥前置區内的生長率朝徑向外 部遞增。元件符號C表不某個環形區域，基座2表面在此 區域内可能發生寄生生長。經由進氣區10送入鹽酸後便可 將表示區域C之起點的點劃線徑向向外推移。該點劃線在 不送入鹽酸的情況下直接處於進氣機構7下游，利用送入鹽 酸將點劃線所示之區域C起點推移至圖4所示間距上。 往加合物形成區域送入低量齒素成分(如鹽酸)後，反應器 便可用相對較小的氣體流量工作，如此便可使處理氣體停留 於處理室1内的平均停留時間達到1.5秒以上。同時，生長 區G在流動方向上的長度亦可大於150 mm以上。特別是 ΠΙ族成分之氣相耗竭在生長區G之上述長度範圍内直線下 降，於是便可利用基板4的旋轉沉積均勻層厚的層。 由於粒子形成受到削弱，前置區V下游之生長率亦得以 提 ifj。 圖5為另一實施例的結構圖’其中，處理室1在承載一或 多個基板4的基座2上方延伸，處理室的頂部6由進氣機構 101113426 21 201248695 7構成’ EP 0 687 749 B1曾描述過該進氣機構。 該進氣機構在基座2的整個延伸面上延伸且具有多個朝 向處理室1的排氣σ，以便將各種處理氣體送人該處理室。 進氣機構7具有多個上下疊置的腔室。直接位於處理室頂 部6上方的腔室11充有冷卻液。多個由插管構成的氣體通 道穿過該腔室11。元件符號9所示排氣口與充有惰性氣體 (特別是氮氣或氫氣）的腔室35相連。該腔室35同樣藉由相 應插管與排氣平面（即與處理室頂部6)相連，該腔室35上方 設有充有氫化物（特別是氨）的腔室36。該腔室36同樣藉由 既與腔室11亦與腔室35相交的插管與用元件符號8表示的 排氣口相連。佈置於腔室36上的腔室37同樣藉由相應插管 與排氣面相連，該腔室37内充有惰性氣體、該_素成分及 該金屬有機成分。該腔室37藉由與腔室11、35、36相交的 插管與用元件符號10表示的排氣口相連。 圖7及圖8為上述排氣口的橫向佈置方案。 如圖所示，每個排氣口 8、1〇皆構成一進氣區。經由進氣 區8將氫化物(本實施例中為氨)送入該處理室◊每個氫化物 進氣區8皆被多個用於將隔離氣體(本實施例中為氮氣或氫 氣)送入處理室的排氣口包圍。該等隔離氣體進氣區9包圍 各排氣口 8、10。用元件符號9表示的排氣口用以將隔離氣 體送入處理室，該等排氣口包圍分別構成氫化物進氣區及鹵 素成分進氣區的排氣口 8及1〇。 101113426 22 ⑤ 201248695 經由鹵素成分進氣區10將金屬有機成分連同鹽酸及惰性 氣體送入該處理室。該等ii素成分進氣區亦皆被隔離氣體進 氣區9包圍。隔離氣體進氣區9由多個排氣口構成。 如圖7及圖8所示，沒有任何氫化物進氣區8及i|素進氣 區10採取緊挨佈置方案。任一氫化物進氣區8與任一鹵素 成分進氣區10之間皆設有至少兩隔離氣體進氣區9*故而 圍繞任一氫化物進氣區8及任一鹵素成分進氣區]0皆形成 惰性氣體氣幕。 圖9所示實施方式同樣具有喷淋頭7,該喷淋頭具有多個 上下疊置的腔室，其中，位於處理室頂部直接上方的腔室 11受到冷卻介質的冷卻。惰性氣體連同鹵素成分送入位於 該腔室直接上方的腔室37。任一鹵素成分進氣區10配屬相 應排氣口 10。 再往上的腔室用於輸送氨，即氫化物。該腔室藉由多個插 管與排氣面相連。每個插管的出口皆配屬於一氫化物進氣區 8 ° 最上面的腔室35用於輸送惰性氣體(例如氫氣或氮氣)及 III族金屬有機成分。該腔室藉由多個插管與處理室頂部6 相連。每個插管的出口皆配屬於一隔離氣體進氣區9，該隔 離氣體進氣區除惰性成分外亦將III族成分送入處理室。 圖10為上述排氣口的橫向佈置方案。從中亦可看出，每 個鹵素成分進氣區10皆被六個隔離氣體進氣口 9包圍，每 101113426 23 201248695 個氫化物進氣區8皆被六個隔離氣體進氣口 9包圍’故而圍 繞每個氫化物進氣區8及每個鹵素成分進氣區10皆形成用 以將惰性氣體及III族成分送入處理室的氣體幕。 在圖11所示實施例中，每個氫化物進氣區8及每個鹵素 成分進氣區10皆被一可用以將隔離氣體送入處理室的環形 排氣口 9包圍。圖6、7、9、10中構成氫化物進氣區的排氣 口 8皆為黑片。用於將鹵素成分送入處理室的排氣口 1〇上 打有叉。構成隔離氣體進氣區9的排氣口則為圓周。上述排 氣口的直徑、彼此間距及佈置方案可具有一定浮動性。舉例 而言’整個孔面積可小於排氣面總面積的、3%或5〇/0。 在此情況下選擇某種流動狀態及空間佈置方案，使得v 族成分（即氫化物）與鹵素唯有在氣體溫度高於氯化銨之形 成溫度的某個區域内方能接觸。 第一實驗係在基板溫度1為1050〇c、處理室頂部溫度Tc 為90(TC且在相同的氫氣運載氣體量條件下沉減化鎵。停 留時間分別為〇.58秒、、1.01秒及1.52秒、。藉由4英对藍寶 石基板上的生長率來量測#向_ q添加㈣且停留時間 較長時’耗竭曲線的走向極其不規則且在生長區G中央^ 下降至一刀之卩下^添加僅2 s_鹽酸後，所有三個 留時間下的耗竭曲線大體吻合。因此，鹽酸几耻之莫耳 比為2%時便足以將耗竭曲線線性化。鹽酸與TMGa的莫耳 比約為5°/。至7%時效果最^ 取住大於此莫耳比時，上述對寄 10U13426 ⑧ 24 201248695 生生長的抑制作用出現在前置區v内。 第二實驗係沉積氮化鋁而非氮化鎵。採用TMA1為III族 成分。TMA1針對NH3的反應性遠高於TMGa。且其加合物 非常穩定。此處同樣用4英吋藍寶石基板來沉積氮化鋁，但 採用的基板溫度為1200°C，處理室頂部溫度約為1100°C， 且在相同的氫氣運載氣體量條件下實施沉積。處理氣體在處 理室内的停留時間分別為0.08秒及0.33秒。從第二實驗亦 可看出，不添加鹽酸且停留時間較長時，耗竭曲線驟然下 降。添加鹽酸且生長時間較長時，耗竭曲線呈直線。 根據一種實施方案，氫化物進氣區之高度為5 mm，隔離 氣體進氣區9之高度為10 mm，鹵素成分進氣區10之高度 為5 mm，經由上進氣區8輸入16.6 slm的ΝΗ3，經由中進 氣區9輸入31 slm的Η2及6 slm的Ν2，經由下進氣區10 輸入16.8 slm的Η2。其中，出於流量穩定性考慮，氣體流 量分配狀況大體對應於該等進氣區8、9、10之高度分佈， 從而將各進氣平面間的氣體流速保持於大體相等的水平 上。各氣體流速、各脈衝流密度（rho*v)或各雷諾數 (Γΐιο*ν*Η/μ)的最大失配例如可為1:1.5、1:2或1:3。下進氣 區10還可輸入鹽酸，其中，鹽酸流量最大約為另經由中進 氣區9輸入之純金屬有機成分之流量的十分之一。調整處理 室大小時需要將常數^•保持恆定，其中，U表示相同壓 力條件下所有三個進氣區内的平均氣體流速，Η表示中進氣 101113426 25 201248695 區的高度’ R表示進氣機構7半徑，D表示氣體混合物中處 理氣體的擴散係數。藉此可產生以下應用實例：若中進氣區 的南度Η提局一倍’則可將氣體流速增矣四倍。若進氣機 構7的直徑提高一倍，則必須將中進氣區的高度Η增至1.4 倍。亦可將流動速度增至四倍。 亦可將齒素成分（特別鹽酸）連同金屬有機成分一起經由 · 共用進氣區送入該處理室。亦可將金屬有機成分與氫化物混 . 合在一起並經由共用進氣區送入該處理室。亦可採用其他結 構的進氣機構將處理氣體送入處理室。 該處理室的直徑可為365 mm，高度可為20 mm。進氣區 8、9、10的平均高度為1〇 mm，抑或在上限範圍内決定其 比例。進氣區E的半徑不高於約22 mm。該前置區位於22 mm至75 1111!1的徑向區域内。生長區（}位於75111111至175111111 的徑向區域内。排氣區A位於生長區G徑向外部。穿過該 處理室的總氣體流量介於70 slm及9〇 slm之間。在5〇 mbar 至900 mbar壓力範圍内實施生長過程。總壓例如為4〇〇 時’氨氣分壓可為95 mbai^TMGa分壓為〇 〇73 mbar至 0.76 mbar。生長率在不添加鹽酸且頂以分壓約為〇255 mbar的情況下達到飽和。添加鹽酸後生長率可升至i〇gm/h . 以上。在5%莫耳比的鹽酸:TMGa且TMGa分壓為。％咖 . 的情況下’生長率為13.8 pm/h’TMGa分壓為⑽伽的 情況下，生長率為26.5 μιη/h。 101113426 26 ⑤ 201248695 此外，採用以下參數集取得了比先前技術更佳的結果： 總壓=600 mbar，ρ(ΝΗ3)=142·5 mbar，TMGa 分壓為 〇.〇4 mbar 至 0.82 mbar(相當於 2.13E-4 至 4.3E-3 mol/min)。 總壓=800 mbar ’ p(NH3)=190 mbar，TMGa 分壓為 0.054 mbar 至 1.09 mbar(相當於 2.13E-4 至 4.3E-3 mol/min)。 總壓=900 mbar ’ p(NH3)=214 mbar，TMGa 分壓為 〇.〇6 mbar 至 1.23 mbar(相當於 2.13E-4 至 4.3E-3 mol/min) 〇 所有已揭示特徵（自身即）為發明本質所在。故本申請之揭 示内容亦包含相關/所附優先權檔案（在先申請副本）所揭示 之全部内谷’該等檔案所述特徵亦一併納入本申請之申請專 利範圍。附屬項採用可選並列措辭對本發明針對先前技術之 改良方案的賴說明，其目駐要在於在料請求項基 礎上進行分案申請。 土 【圖式簡單說明】 圖1為佈置於未繪示反應器殼體内之處理室的剖視圖，處 理乳體沿水平方向穿過該處理室，殺-混氣/供氣袋置， 5亥混氣/供氣裝置中僅顯示祕祕本發明的主要元件； 圖2為處理室内就流動方向而言三個不同位置上的溫产 剖面； ·'里又 圖3中的實線絲未在流動方向上添加鹽料的生長率 走向，虛線則表示添加了鹽酸； 圖4為—基板座的俯視圖，其中，虛線表示前置區V的 101113426 27 201248695 外緣，點劃線表示可能在基座表面上發生寄生生長的區域c 的起點； 圖5為進氣機構7實施為喷淋頭時的另一實施例的剖視 圖； 圖6為圖5中的局部V; 圖7為圖5所示進氣機構7之排氣面的一分區的底視圖， 其排氣口採用第一佈置方案； 圖8為類似於圖7的示意圖，但各排氣口採用第二佈置方 案； 圖9為類似於圖6的另一實施例之示意圖； 圖10為圖9所示進氣機構之類似於圖7的示意圖；及 圖11為排氣面上的各排氣口採用另一佈置方案。 【主要元件符號說明】 1 處理室 2 基座 3 基板座 4 基板 5 凹槽 6 處理室頂部 7 進氣機構/喷淋頭 8 氫化物進氣區/上進氣區/排氣口 9 隔離氣體進氣區（金屬有機成分)/中進氣區/排氣口 101113426 28 201248695 10 鹵素成分進氣區/下進氣區/排氣口 11 冷卻液通道/腔室 12 隔壁 13 隔壁 14 上壁 15 壁區段 16 排氣裝置 17 真空泵 18 射頻加熱器 19 氫化物進氣管 20 金屬有機成分進氣管 21 鹵素成分進氣管 22 氫化物質量流量控制器 23 金屬有機成分質量流量控制器 24 鹵素成分質量流量控制器 25 運載氣體質量流量控制器 26 閥門-氫化物 27 閥門-金屬有機成分 28 閥門-_素成分 29 閥門-運載氣體 30 氫化物源/氣體源 31 金屬有機成分源/氣體源 101113426 29 201248695 32 鹵素成分源/氣體源 33 運載氣體源/氣體源 34 混氣/供氣裝置 35 腔室 36 腔室 37 腔室 A 排氣區 D 擴散邊界層 E 進氣區 G 生長區 M 混氣區 V 前置區 101113426 30 ⑤Ts and Tc are approximately the same. However, its slope in the front region 乂 is greater than the temperature Tc of the top portion 6 of the processing chamber. The gas temperature exceeds the processing chamber top temperature Tc from the beginning of the region M. Figure 3 is a qualitative trend of the growth rate in the flow direction, wherein the solid line indicates that no hydrochloric acid is added, and the broken line indicates that hydrochloric acid is added, the trend of the growth rate curve and the partial pressure of the Group II or III component metals in the gas phase are generally Consistent. As shown in the figure, the maximum value of the growth rate Γ when no hydrochloric acid is added is located in the region of the pre-zone immediately upstream of the growth zone G (i.e., the aeration zone). The growth rate r or the depletion curve of the metal component in the absence of hydrochloric acid is not straight in the growth zone G, which causes uneven growth when the substrate is rotated during the deposition process. The layer thickness of the edge region of the substrate is larger than the center of the substrate. After the halogen component is supplied, a relatively high concentration of the γ component is formed above the upper surface of the high temperature wall section 15 of the susceptor 2. The dentate component (e.g., hydrochloric acid) acts as a surface etch to attenuate the parasitic 101113426 201248695 length in the high temperature front region 15. The maximum growth rate is displaced downward in the flow direction. At the same time, the exhaustion curve is also in a straight line. This straight line is also related to the inhibition of the formation of the adduct by the addition of hydrochloric acid. The ® 4 is a plan view of the susceptor 2 in which a plurality of substrate holders 3 are annularly arranged around the central intake mechanism 7. The substrate holder 3 can also be of a larger diameter so that the substrate holders 3 are arranged in a nearly contact manner. Element (4) v denotes an annular shape around the fresh-keeping region V of the air intake mechanism 7 and the growth rate in the front-end region is increased radially outward. The component symbol C does not indicate an annular region, and the surface of the susceptor 2 may be parasitic in this region. By feeding hydrochloric acid through the intake region 10, the dot line indicating the starting point of the region C can be radially outwardly displaced. This dotted line is directly below the intake mechanism 7 without feeding hydrochloric acid, and the starting point of the region C indicated by the chain line is pushed to the pitch shown in Fig. 4 by feeding hydrochloric acid. After feeding a low amount of dentate component (such as hydrochloric acid) into the adduct formation zone, the reactor can be operated with a relatively small gas flow rate, so that the average residence time of the process gas in the treatment chamber 1 is 1.5 seconds. the above. At the same time, the length of the growth zone G in the flow direction can also be greater than 150 mm. In particular, the gas phase depletion of the steroid component decreases linearly within the above-described length range of the growth zone G, so that a uniform layer thickness layer can be deposited by the rotation of the substrate 4. Since the particle formation is weakened, the growth rate downstream of the pre-zone V is also improved. Figure 5 is a structural view of another embodiment in which the processing chamber 1 extends over a susceptor 2 carrying one or more substrates 4, and the top 6 of the processing chamber is constituted by an air intake mechanism 101113426 21 201248695 7 'EP 0 687 749 This air intake mechanism has been described in B1. The air intake mechanism extends over the entire extended surface of the base 2 and has a plurality of exhaust gases σ directed toward the process chamber 1 to deliver various process gases to the process chamber. The intake mechanism 7 has a plurality of chambers stacked one on top of the other. The chamber 11 directly above the top 6 of the processing chamber is filled with coolant. A plurality of gas passages formed by the cannula pass through the chamber 11. The exhaust port shown by reference numeral 9 is connected to a chamber 35 filled with an inert gas (particularly nitrogen or hydrogen). The chamber 35 is also connected to the venting plane (i.e., to the top 6 of the processing chamber) by a corresponding cannula, and a chamber 36 filled with a hydride (particularly ammonia) is disposed above the chamber 35. The chamber 36 is also connected to the exhaust port indicated by the symbol 8 by means of a cannula that intersects both the chamber 11 and the chamber 35. The chamber 37 disposed on the chamber 36 is also connected to the exhaust surface by a corresponding cannula, which is filled with an inert gas, the elemental component and the metal organic component. The chamber 37 is connected to the exhaust port indicated by the symbol 10 by a cannula that intersects the chambers 11, 35, 36. 7 and 8 show the lateral arrangement of the above-mentioned exhaust port. As shown, each of the exhaust ports 8, 1 is an intake region. The hydride (ammonia in this embodiment) is fed into the processing chamber via the inlet region 8 and each of the hydride inlet regions 8 is used to deliver a separator gas (nitrogen or hydrogen in this embodiment). Surrounded by the exhaust port of the processing chamber. The isolated gas inlet regions 9 surround the exhaust ports 8, 10. The exhaust port indicated by the reference numeral 9 is for supplying the insulating gas to the processing chamber, and the exhaust ports surround the exhaust ports 8 and 1 which respectively constitute the hydride inlet region and the halogen component inlet region. 101113426 22 5 201248695 The metal organic component is fed into the processing chamber along with the hydrochloric acid and inert gas via the halogen component inlet zone 10. The ii component air intake regions are also surrounded by the isolated gas inlet zone 9. The isolated gas inlet region 9 is composed of a plurality of exhaust ports. As shown in Figures 7 and 8, no hydride inlet region 8 and i-intake region 10 are arranged in close proximity. Between any of the hydride inlet regions 8 and any of the halogen component inlet regions 10, at least two isolated gas inlet regions 9* are provided so as to surround any of the hydride inlet regions 8 and any of the halogen component inlet regions. 0 forms an inert gas curtain. The embodiment shown in Fig. 9 also has a showerhead 7 having a plurality of chambers stacked one on top of the other, wherein the chamber 11 located directly above the top of the processing chamber is cooled by the cooling medium. The inert gas, along with the halogen component, is fed into a chamber 37 located directly above the chamber. Any halogen component inlet zone 10 is associated with a corresponding exhaust port 10. The further chamber is used to transport ammonia, ie hydride. The chamber is connected to the venting surface by a plurality of cannulas. The outlet of each cannula is assigned to a hydride inlet zone. 8 ° The uppermost chamber 35 is used to deliver inert gases (such as hydrogen or nitrogen) and Group III metal organic components. The chamber is connected to the top 6 of the processing chamber by a plurality of cannulas. The outlet of each cannula is associated with an isolating gas inlet region 9, which in addition to the inert component also feeds the Group III component into the processing chamber. Figure 10 is a plan view of the lateral arrangement of the above-mentioned exhaust ports. It can also be seen that each halogen component inlet zone 10 is surrounded by six isolating gas inlets 9, each of which is surrounded by six isolating gas inlets 9 per 101113426 23 201248695 hydride inlets 8 A gas curtain for feeding inert gas and a group III component into the processing chamber is formed around each of the hydride inlet region 8 and each of the halogen component inlet regions 10. In the embodiment of Figure 11, each of the hydride inlet zone 8 and each of the halogen component inlet zones 10 is surrounded by an annular vent 9 which is used to feed the barrier gases into the process chamber. The exhaust ports 8 constituting the hydride inlet region in Figs. 6, 7, 9, and 10 are all black sheets. A fork is used to feed the halogen component into the processing chamber. The exhaust port constituting the isolated gas intake region 9 is a circumference. The diameters, spacings and arrangement of the above-mentioned exhaust ports may have a certain degree of floating. For example, the entire aperture area may be less than 3% or 5 〇/0 of the total area of the exhaust surface. In this case, a certain flow state and spatial arrangement is selected such that the v-group component (i.e., hydride) and the halogen are only in contact in a region where the gas temperature is higher than the formation temperature of ammonium chloride. The first experiment was performed at a substrate temperature of 1100 〇c and a treatment chamber top temperature Tc of 90 (TC and sinking gallium under the same hydrogen carrier gas amount. The residence time was 〇.58 sec, 1.01 sec and 1.52 sec.. Measured by the growth rate on the 4 s sapphire substrate. # Add to the _q (4) and the residence time is long. The trend of the depletion curve is extremely irregular and falls to the root of the G in the growth zone. After adding only 2 s_hydrochloric acid, the depletion curves of all three residence times are generally consistent. Therefore, it is sufficient to linearize the depletion curve when the molar ratio of hydrochloric acid is 2%. The molar ratio of hydrochloric acid to TMGa When the effect is about 5°/. to 7%, the above-mentioned inhibition effect on the growth of 10U13426 8 24 201248695 occurs in the pre-region v. The second experimental system deposits aluminum nitride. Instead of gallium nitride, TMA1 is used as a group III component. TMA1 is much more reactive with NH3 than TMGa, and its adduct is very stable. Here also a 4 inch sapphire substrate is used to deposit aluminum nitride, but The substrate temperature is 1200 ° C, the processing chamber top temperature is about 1100 ° C, and The deposition was carried out under the same conditions of hydrogen carrier gas. The residence time of the treatment gas in the treatment chamber was 0.08 seconds and 0.33 seconds, respectively. It can also be seen from the second experiment that when the hydrochloric acid is not added and the residence time is long, the depletion curve suddenly When the hydrochloric acid is added and the growth time is long, the depletion curve is straight. According to one embodiment, the height of the hydride inlet region is 5 mm, the height of the isolation gas inlet region 9 is 10 mm, and the halogen component is 10 The height is 5 mm, the ΝΗ3 of 16.6 slm is input via the upper air inlet area 8, the Η2 of 6 slm and the Ν2 of 6 slm are input via the middle air inlet area 9, and the Η2 of 16.8 slm is input via the lower air inlet area 10. For flow stability considerations, the gas flow distribution condition generally corresponds to the height distribution of the inlet zones 8, 9, 10, thereby maintaining the gas flow rates between the inlet planes at substantially equal levels. The maximum mismatch of the pulse current density (rho*v) or each Reynolds number (Γΐιο*ν*Η/μ) can be, for example, 1:1.5, 1:2 or 1:3. The lower gas inlet zone 10 can also be fed with hydrochloric acid. Among them, the maximum flow rate of hydrochloric acid is about another The gas zone 9 inputs one tenth of the flow rate of the pure metal organic component. The constant constant is required to adjust the size of the process chamber, where U represents the average gas flow rate in all three gas inlet zones under the same pressure condition. Η indicates the height of the intake air 101113426 25 201248695 zone 'R represents the radius of the intake mechanism 7, D represents the diffusion coefficient of the process gas in the gas mixture. This can produce the following application examples: If the middle intake of the middle intake zone Double's can increase the gas flow rate by a factor of four. If the diameter of the intake mechanism 7 is doubled, the height of the middle intake zone must be increased to 1.4 times. It can also increase the flow rate by a factor of four. It is also possible to feed the dentate component (particularly hydrochloric acid) together with the metallic organic component into the processing chamber via the common inlet zone. The metal organic component may also be mixed with the hydride and fed into the processing chamber via a common intake region. Other configurations of the intake mechanism may also be used to deliver process gases to the process chamber. The chamber can have a diameter of 365 mm and a height of 20 mm. The average height of the inlet zones 8, 9, 10 is 1〇 mm, or the ratio is determined within the upper limit. The radius of the inlet zone E is not higher than about 22 mm. The front zone is located in the radial area of 22 mm to 75 1111!1. The growth zone (} is located in the radial region of 75111111 to 175111111. The exhaust zone A is located radially outside the growth zone G. The total gas flow through the process chamber is between 70 slm and 9 〇slm. The growth process is carried out in a pressure range of up to 900 mbar. When the total pressure is, for example, 4 ', the partial pressure of ammonia can be 95 mbai^TMGa partial pressure is 〇〇73 mbar to 0.76 mbar. The growth rate is not added with hydrochloric acid and the top is divided into points. The saturation is reached at a pressure of about 255 mbar. The growth rate can be increased to i〇gm/h after adding hydrochloric acid. In the case of 5% molar ratio of hydrochloric acid: TMGa and TMGa partial pressure is .% coffee. In the case where the growth rate is 13.8 pm/h and the TMGa partial pressure is (10) gamma, the growth rate is 26.5 μηη/h. 101113426 26 5 201248695 Furthermore, the following parameter sets are used to obtain better results than the prior art: Total pressure = 600 mbar, ρ(ΝΗ3)=142·5 mbar, TMGa partial pressure is 〇.〇4 mbar to 0.82 mbar (equivalent to 2.13E-4 to 4.3E-3 mol/min). Total pressure = 800 mbar 'p( NH3) = 190 mbar, TMGa partial pressure is 0.054 mbar to 1.09 mbar (equivalent to 2.13E-4 to 4.3E-3 mol/min). Total pressure = 900 mbar ' p(NH3) = 2 14 mbar, TMGa partial pressure is 〇.〇6 mbar to 1.23 mbar (equivalent to 2.13E-4 to 4.3E-3 mol/min) 〇All disclosed features (self) are the essence of the invention. The content also contains all the relevant valleys disclosed in the relevant/attached priority file (copy of the prior application). The features described in these files are also included in the scope of the patent application of the present application. The subsidiary item is optional and side-by-side. According to the prior art improvement scheme, the purpose of the invention is to make a divisional application based on the request of the material. [Simplified description of the drawings] Fig. 1 is a cross-sectional view of a processing chamber disposed in a reactor housing not shown. The treated milk body passes through the processing chamber in a horizontal direction, and the killing/mixing gas/air supply bag is disposed. The main components of the invention are only shown in the 5H mixing/air supply device; FIG. 2 is the flow direction in the processing chamber. For the temperature profiles in three different locations; · The solid wire in Figure 3 does not add the growth rate of the salt in the flow direction, and the dotted line indicates the addition of hydrochloric acid; Figure 4 is the substrate holder Top view, where the dotted line 101113426 27 201248695 outer edge of the front zone V, the dotted line indicates the starting point of the region c where parasitic growth may occur on the surface of the base; FIG. 5 is a cross-sectional view of another embodiment when the air intake mechanism 7 is implemented as a shower head Figure 6 is a partial view V of Figure 5; Figure 7 is a bottom view of a section of the exhaust surface of the air intake mechanism 7 of Figure 5, the exhaust port of which adopts a first arrangement; Figure 8 is similar to Figure 7 Figure 2 is a schematic view of another embodiment similar to Figure 6; Figure 10 is a schematic view similar to Figure 7 of the air intake mechanism of Figure 9; and Figure 11 Another arrangement is used for each vent on the venting surface. [Main component symbol description] 1 Processing chamber 2 Base 3 Base plate 4 Substrate 5 Groove 6 Processing chamber top 7 Intake mechanism/sprinkler 8 Hydride inlet/upper inlet/exhaust 9 Isolation gas Intake zone (metal organic component) / medium intake / exhaust port 101113426 28 201248695 10 Halogen component intake zone / lower intake zone / exhaust port 11 coolant channel / chamber 12 partition 13 partition 14 upper wall 15 Wall section 16 Exhaust system 17 Vacuum pump 18 Radio frequency heater 19 Hydride gas inlet pipe 20 Metal organic component Intake pipe 21 Halogen component Intake pipe 22 Hydride mass flow controller 23 Metal organic component mass flow controller 24 Halogen component Mass flow controller 25 Carrier gas mass flow controller 26 Valve - hydride 27 Valve - metal organic component 28 Valve - _ component 29 Valve - carrier gas 30 hydride source / gas source 31 Metal organic component source / gas source 101113426 29 201248695 32 Halogen source/gas source 33 Carrier gas source/gas source 34 Mixing/supplying unit 35 Chamber 36 Chamber 37 Chamber A Exhaust zone D Diffusion boundary layer E Intake zone G Growth zone M Mixed zone V Pre-zone 101113426 30 5