WO2012132473A1 - Glass substrate production method - Google Patents

Glass substrate production method Download PDF

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Publication number
WO2012132473A1
WO2012132473A1 PCT/JP2012/002252 JP2012002252W WO2012132473A1 WO 2012132473 A1 WO2012132473 A1 WO 2012132473A1 JP 2012002252 W JP2012002252 W JP 2012002252W WO 2012132473 A1 WO2012132473 A1 WO 2012132473A1
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WO
WIPO (PCT)
Prior art keywords
molten glass
glass
temperature
specific resistance
glass substrate
Prior art date
Application number
PCT/JP2012/002252
Other languages
French (fr)
Japanese (ja)
Inventor
次伸 村上
哲郎 君嶋
宣之 日沖
慎吾 藤本
Original Assignee
AvanStrate株式会社
アヴァンストレート コリア インコーポレイテッド
安瀚視特股▲分▼有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AvanStrate株式会社, アヴァンストレート コリア インコーポレイテッド, 安瀚視特股▲分▼有限公司 filed Critical AvanStrate株式会社
Priority to KR1020127031388A priority Critical patent/KR101300980B1/en
Priority to JP2012549036A priority patent/JP5192100B2/en
Priority to CN201280002624.6A priority patent/CN103080025B/en
Publication of WO2012132473A1 publication Critical patent/WO2012132473A1/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/02Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
    • C03B5/027Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by passing an electric current between electrodes immersed in the glass bath, i.e. by direct resistance heating
    • C03B5/03Tank furnaces
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/16Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
    • C03B5/235Heating the glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B18/00Shaping glass in contact with the surface of a liquid
    • C03B18/02Forming sheets
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B18/00Shaping glass in contact with the surface of a liquid
    • C03B18/02Forming sheets
    • C03B18/18Controlling or regulating the temperature of the float bath; Composition or purification of the float bath
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/02Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
    • C03B5/027Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating by passing an electric current between electrodes immersed in the glass bath, i.e. by direct resistance heating
    • C03B5/03Tank furnaces
    • C03B5/031Cold top tank furnaces

Definitions

  • the present invention relates to a method for manufacturing a glass substrate.
  • glass substrates used for flat panel displays are mainly 0.5 to 0.7 mm in thickness and 300 to 400 to 2850 to 3050 mm in size. is there.
  • An overflow down draw method is known as a method for manufacturing a glass substrate for FPD.
  • the overflow downdraw method in a forming furnace, the molten glass is made to overflow from the upper part of the molded body of the molten glass, whereby the sheet glass is formed from the molten glass, and the formed sheet glass is gradually cooled and cut. Thereafter, the cut sheet glass is further cut into a predetermined size according to customer specifications, subjected to cleaning, end face polishing, etc., and shipped as a glass substrate for FDP.
  • the glass substrate for liquid crystal display devices has a semiconductor element formed on the surface thereof, and therefore does not contain an alkali metal component at all or even if it is contained, the semiconductor element is affected. It is preferable that the amount is as small as possible.
  • bubbles are present in the glass substrate, it causes a display defect. Therefore, a glass substrate in which bubbles are present cannot be used as a glass substrate for FPD. For this reason, it is calculated
  • the electrically heated heating with respect to a molten glass is performed conventionally.
  • high-frequency energization heating of a glass melting furnace using a plurality of electrode pairs is known.
  • Japanese Patent Laid-Open No. 04-367519 discloses a technique in which a plurality of electrodes are controlled for each electrode pair by connecting each electrode pair to a separate power source and controlling each power source individually. Has been.
  • thermocouple In such a melting tank using electric heating, in order to bring the viscosity and convection of the molten glass into a desired state, conventionally, as described in JP-A-03-103328, for example, via a thermocouple The temperature of the molten glass was measured.
  • thermocouple Since the thermocouple is exposed to a high temperature in, for example, a melting tank, the thermocouple may deteriorate in a relatively short time and an accurate temperature may not be measured. Moreover, since the location where the thermocouple can be installed is limited due to the structure of the apparatus for melting the glass raw material, the location where the temperature can be measured by the thermocouple is limited. Then, this invention solves said subject in the electrical heating of molten glass, and provides the manufacturing method of the glass substrate which can maintain the viscosity and convection of molten glass in a desired state.
  • the manufacturing method of the glass substrate which is 1 aspect of this invention includes the melting process which melt
  • the melting step includes: placing the molten glass between a pair of electrodes and applying a voltage; passing a current through the molten glass to generate Joule heat; measuring the current value and the voltage value; And calculating the specific resistance of the molten glass; and controlling the Joule heat based on the calculated specific resistance.
  • the step of controlling the Joule heat may include the following steps. (1) When the viscosity and convection of the molten glass are in a desired state, the current value and the voltage value are measured to calculate the specific resistance of the molten glass, and the calculated specific resistance is The process of setting as a target value of specific resistance. (2) A step of comparing the calculated specific resistance with a target value of the specific resistance. (3) A step of maintaining or increasing or decreasing the value of the current so that a difference between the calculated specific resistance and a target value of the specific resistance is a value within a predetermined range.
  • the temperature of the molten glass may be measured using temperature measuring means such as a thermocouple, and the viscosity and convection of the molten glass may be set to a desired state.
  • the viscosity and convection of the molten glass can be maintained in a desired state.
  • the problem in the case of using temperature measuring means such as a thermocouple can be solved.
  • FIG. 1 is a diagram showing an example of steps of a method for producing a glass substrate according to the present invention.
  • the glass substrate manufacturing method includes a melting step (ST1), a clarification step (ST2), a homogenization step (ST3), a supply step (ST4), a forming step (ST5), and a slow cooling step (ST6). And a cutting step (ST7).
  • a plurality of glass substrates that have a grinding process, a polishing process, a cleaning process, an inspection process, a packing process, and the like and are stacked in the packing process are transported to a supplier.
  • the melting step (ST1) is performed in a melting tank.
  • the glass raw material is intermittently dispersed and introduced into a plurality of positions on the liquid surface of the molten glass stored in the melting tank, thereby producing a molten glass having a uniform surface temperature including the liquid surface.
  • molten glass is poured from the outflow port provided in one bottom part of the inner wall which opposes in the longitudinal direction of a rectangular melting tank by planar view among the inner walls of a melting tank toward a post process.
  • the temperature of the molten glass in the lower layer located below the surface layer is made uniform in the longitudinal direction of the melting tank, and the temperature difference of the molten glass in the longitudinal direction of the melting tank is made as small as possible. Therefore, the amount of heat for heating the lower layer of the molten glass is set to be larger at both ends in the longitudinal direction of the melting tank than in the central part in the longitudinal direction of the melting tank. The reason for this is that the heat of the molten glass is more easily taken away at the both ends in the longitudinal direction of the melting tank than at the center.
  • the “surface layer” of the molten glass represents a region including the liquid surface within a range of 5% or less of the depth from the liquid surface toward the bottom of the melting tank, and the “lower layer” of the molten glass is Represents an area other than the surface layer.
  • the “bottom part” where the outflow port is provided is a part of the lower layer and represents a region close to the bottom surface of the melting tank.
  • the “bottom part” refers to a region where the depth from the bottom surface in the depth direction of the melting tank is 1 ⁇ 2 or less of the depth between the liquid surface and the bottom part of the melting tank.
  • the glass raw material is charged entirely over 80% of the liquid surface of the molten glass in the melting tank.
  • a method for charging the glass raw material a method may be used in which the bucket containing the glass raw material is inverted and the glass raw material is dispersedly charged into the molten glass. Further, the glass raw material may be charged by a method in which the glass raw material is conveyed and distributed using a belt conveyor, or a method in which the glass raw material is charged all over at once. Further, the glass raw material may be charged by a method in which the glass raw material is dispersedly supplied by a screw feeder or a method in which the glass raw material is supplied to the entire surface at once. In an embodiment described later, the glass raw material is charged by a charging method using a bucket.
  • the molten glass When a voltage is applied between the electrodes of the melting tank to pass a current through the molten glass, the molten glass generates Joule heat. If the Joule heat is increased, the temperature of the molten glass increases, and if it is decreased, the temperature of the molten glass can decrease. In addition to heating the molten glass by energization, the glass raw material can be melted by using the heat from the burner flame as an auxiliary.
  • a fining agent is added to the glass raw material.
  • SnO 2 , As 2 O 3 , Sb 2 O 3 and the like are known as fining agents, but are not particularly limited. However, it is preferable to use SnO 2 (tin oxide) as a clarifying agent from the viewpoint of reducing environmental burden.
  • the clarification step (ST2) is performed at least in the clarification tank.
  • the temperature of the molten glass in the clarification tank is raised.
  • the fining agent releases oxygen by a reduction reaction, and becomes a substance that later acts as a reducing agent.
  • Bubbles containing O 2 , CO 2 or SO 2 contained in the molten glass grow by absorbing O 2 generated by the reductive reaction of the clarifying agent, and float on the liquid surface of the molten glass and disappear.
  • the clarification step is performed inside a platinum or platinum alloy container.
  • the temperature of the molten glass is lowered.
  • the reducing agent obtained by the reductive reaction of the clarifying agent undergoes an oxidation reaction.
  • gas components such as O 2 in the foam remaining in the molten glass are reabsorbed in the molten glass, and the foam disappears.
  • the oxidation reaction and the reduction reaction by the fining agent are performed by controlling the temperature of the molten glass.
  • a reduced pressure defoaming method can be used in which a reduced pressure atmosphere is created in a clarification tank, and bubbles present in the molten glass are grown in a reduced pressure atmosphere and defoamed. In this case, it is effective in that no clarifier is used.
  • tin oxide is used as a fining agent.
  • the glass components are homogenized by stirring the molten glass in the stirring tank supplied through the pipe extending from the clarification tank using a stirrer. Thereby, the composition unevenness of the glass which is a cause of striae or the like can be reduced.
  • One stirring tank or two stirring tanks may be provided.
  • the molten glass is supplied to the molding apparatus through a pipe extending from the stirring tank.
  • a molding step (ST5) and a slow cooling step (ST6) are performed.
  • the molten glass is formed into a sheet glass to make a flow of the sheet glass.
  • an overflow down draw method or a float method can be used. In this embodiment to be described later, an over download method is used.
  • the slow cooling step (ST6) the sheet glass that has been formed and flowed is cooled to a desired thickness, so that internal distortion does not occur and warpage does not occur.
  • the sheet glass supplied from the forming device is cut into a predetermined length to obtain a plate-like glass plate.
  • the cut glass plate is further cut into a predetermined size to produce a glass substrate of a target size.
  • the end surface of the glass substrate is ground and polished, the glass substrate is cleaned, and further, the presence of abnormal defects such as bubbles and striae is inspected. Will be packed as.
  • FIG. 2 is a diagram schematically showing an example of an apparatus for performing the melting step (ST1) to the cutting step (ST7) in the present embodiment.
  • the apparatus mainly includes a melting apparatus 100, a forming apparatus 200, and a cutting apparatus 300.
  • the melting apparatus 100 includes a melting tank 101, a clarification tank 102, a stirring tank 103, and glass supply pipes 104, 105, and 106.
  • the glass raw material is charged using a bucket 101d.
  • the temperature of the molten glass MG is adjusted, and the clarification of the molten glass MG is performed using the oxidation-reduction reaction of the clarifier.
  • the stirring vessel 103 the molten glass MG is stirred and homogenized by the stirrer 103a.
  • the sheet glass SG is formed from the molten glass MG by the overflow down draw method using the formed body 210.
  • FIG. 3 is a perspective view illustrating a schematic configuration of the melting tank 101 of the present embodiment.
  • the melting tank 101 is designed to make a molten glass in which the temperature of the surface layer including the liquid surface is uniform.
  • the glass raw material is entirely charged into the liquid surface 101c of the molten glass MG stored in the melting tank 101.
  • An outflow port 104a is provided at the bottom of one of the pair of inner walls facing each other in the longitudinal direction of the rectangular melting tank 101 in plan view.
  • the melting tank 101 flows the molten glass MG from the outlet 104a toward the subsequent process.
  • the melting tank 101 has an inner wall 110 made of a refractory material such as a refractory brick.
  • the melting tank 101 has an internal space surrounded by an inner wall 110.
  • the internal space of the melting tank 101 is divided into a liquid tank 101a and an upper space 101b.
  • the liquid tank 101a accommodates the molten glass MG formed by melting the glass raw material charged into the internal space while heating.
  • the upper space 101b is formed on the molten glass MG and is a gas phase into which a glass raw material is charged.
  • the inner wall 110 of the upper space 101b parallel to the longitudinal direction of the melting tank 101 is provided with a burner 112 that emits a flame by burning combustion gas mixed with fuel and oxygen.
  • the burner 112 heats the refractory in the upper space 101b with a flame to heat the inner wall 110 high.
  • the glass raw material is heated by the radiant heat of the inner wall 110 that has become high temperature and the gas phase atmosphere that has become high temperature.
  • a raw material charging window 101f leading to the upper space 101b is provided on the inner wall 110 opposite to the inner wall 110 where the outflow port 104a of the melting tank 101 is provided.
  • the bucket 101d containing the glass raw material shown in FIG. 4 enters and exits the upper space 101b.
  • the bucket 101d moves back and forth and right and left on the liquid surface 101c of the molten glass MG in accordance with instructions from the computer 118.
  • the computer 118 sends an instruction to a bucket operating mechanism (not shown) to operate the bucket 101d through the control unit 116.
  • FIG. 4 is a plan view for explaining the introduction of the glass raw material in the melting tank 101. As shown in FIG. 4, the glass raw material is entirely charged with respect to the liquid surface of the molten glass MG stored in the melting tank 101. Thereby, molten glass MG in which the temperature of the surface layer including the liquid surface is made uniform is produced.
  • the melting tank 101 includes a bucket operation mechanism.
  • the bucket operation mechanism moves the bucket 101d to a target area in a state where the glass raw material is stored in the bucket 101d, and flips the bucket 101d upside down.
  • the area where the glass material is charged by the bucket 101d and the time interval for charging are determined in advance so that the glass material does not disappear on the liquid surface 101c of the molten glass MG. Therefore, in the melting tank 101, since it is poured into substantially the entire liquid surface of the molten glass MG, the glass raw material always covers the liquid surface 101c of the molten glass MG.
  • one of the reasons for introducing the glass raw material into the melting tank 101 so that the glass raw material always covers the liquid surface 101c is that the heat of the molten glass MG is not radiated to the upper space 101b which is a gas phase through the liquid surface 101c. It is for doing so. Thereby, the temperature of the surface layer including the liquid surface of the molten glass MG is made uniform, the temperature is kept constant, and the temperature distribution in the horizontal direction is flattened. Another reason is to efficiently melt a raw material having a low melting property (high melting temperature) such as SiO 2 (silica) among the glass raw materials, thereby preventing unmelted raw materials such as SiO 2 .
  • a raw material having a low melting property such as SiO 2 (silica) among the glass raw materials
  • a raw material with a high melting temperature such as SiO 2 is melted at a temperature lower than the melting temperature when it is melted alone when mixed with other components such as a raw material such as B 2 O 3 (boron oxide). obtain.
  • the glass raw material is intermittently dispersed and charged so that the glass raw material always exists on the liquid surface 101c of the molten glass MG and covers the liquid surface 101c. Accordingly, B 2 O 3 or the like of the raw material, since the melting together melted hard such as SiO 2 raw material, it is possible to prevent the remaining melted ingredients such as SiO 2.
  • the glass raw material when the glass raw material is thrown into only a partial region of the liquid surface of the molten glass, raw material components such as SiO 2 that are difficult to melt remain unmelted, and the glass raw material is convected from the pouring position of the glass raw material by convection. It may float as a heterogeneous substrate on a liquid surface that is far away. Depending on the convection state of the molten glass, such a heterogeneous substrate moves to the lower layer of the molten glass and flows out from the outlet of the melting tank, and may flow to the subsequent process. Prone to cause.
  • the glass raw material in the melting tank 101, the glass raw material is entirely charged with respect to the liquid surface of the molten glass MG. Therefore, the temperature in the surface layer including the liquid level of the molten glass MG is made uniform. It is also possible to prevent the remaining melted raw material components such as SiO 2.
  • the inner walls 110a and 110b of the liquid tank 101a that extend in the longitudinal direction of the melting tank 101 and that are made of a heat-resistant conductive material such as tin oxide or molybdenum are provided with three pairs of electrodes 114 that face each other. Is provided.
  • the melting tank 101 includes three pairs of electrodes 114, but only a pair of electrodes 114 may be used depending on the size of the melting tank. When a plurality of pairs of electrodes 114 are used, two pairs or four or more pairs of electrodes 114 may be used.
  • the three pairs of electrodes 114 are provided in regions corresponding to the lower layer of the molten glass MG in the inner walls 110a and 110b. All three pairs of electrodes 114 extend through the inner walls 110a and 110b from the outer side to the inner side of the inner walls 110a and 110b. In FIG. 3, each pair of electrodes 114 shows the front electrode 114, and the back electrode 114 is not shown. Each pair of electrodes 114 is provided on the inner side walls 110a and 110b so as to face each other across the molten glass MG disposed between each pair of electrodes 114.
  • Each pair of electrodes 114 applies a voltage to the molten glass MG disposed between each pair of electrodes 114 to cause a current to flow.
  • Joule heat is generated in the molten glass MG, and the molten glass MG is heated.
  • the molten glass MG is heated to, for example, 1500 ° C. or higher.
  • the heated molten glass MG is sent to the clarification tank 102 through the glass supply pipe 104.
  • the burner 112 is provided in the upper space 101b, but the burner 112 is not essential.
  • the glass raw material can be efficiently melted by using the burner 112 as an auxiliary.
  • the glass raw material When the glass raw material is continuously melted to produce the molten glass MG, the glass raw material can be melted without using the burner 112. For example, by covering the liquid surface 101c of the molten glass MG entirely with the glass raw material, heat radiation from the liquid surface 101c of the molten glass MG is prevented, the temperature drop of the molten glass MG is suppressed, and the lower molten glass MG The glass raw material can be melted by the generated Joule heat.
  • Each pair of electrodes 114 is connected to a control unit 116, respectively.
  • the control unit 116 is configured to be able to control the power supplied to each of the electrodes 114 for each pair of electrodes 114 facing each other.
  • a single-layer AC voltage is applied to each pair of electrodes 114 by the control unit 116.
  • the control unit 116 is further connected to a computer 118.
  • the control unit 116 measures the magnitude of the voltage applied to the molten glass MG between each pair of electrodes 114 and the value of the current flowing through the molten glass MG between each pair of electrodes 114.
  • the control unit 116 outputs information on the measured voltage and current values.
  • the computer 118 receives these pieces of information output from the control unit 116.
  • the computer 118 calculates the specific resistance of the molten glass MG between each pair of electrodes 114 from the information on the voltage and current values.
  • the computer 118 calculates the specific resistance ⁇ ( ⁇ ⁇ m) of the molten glass MG between each pair of electrodes 114 based on, for example, the following equation (2).
  • E is a voltage (V) applied to the molten glass MG between each pair of electrodes 114
  • I is a current (A) flowing through the molten glass MG between each pair of electrodes 114
  • S is each pair of electrodes 114.
  • L is the distance (m) between each pair of electrodes 114.
  • the cross-sectional area S and the length L are specific values determined by the melting tank 101.
  • FIGS. 5A and 5B are plan views for explaining a method for obtaining the cross-sectional area S of the molten glass MG through which a current flows between each pair of electrodes 114.
  • each pair of electrodes 114 is disposed on the inner walls 110 a and 110 b disposed on both sides of the molten glass MG so as to face each other so as to cross the flow direction F of the molten glass MG.
  • the electrode 114 of the three opposed pairs are spaced W 1 from each other in the flow direction F of the molten glass MG.
  • the interval W 1 is the distance between the mutually facing edges of adjacent electrodes 114.
  • the flow direction F indicates the flow direction from the upstream to the downstream of the molten glass MG as a whole in the melting tank 101 for convenience, and is a direction parallel to the inner walls 110a and 110b and toward the outlet 104a.
  • the flow direction F is a direction along the longitudinal direction of the melting tank 101.
  • an area EA through which a current flows is set for each pair of electrodes 114 facing each other.
  • the boundary m of the energization region EA is set so as to pass through the intermediate point C between the two electrodes 114 adjacent in the flow direction F.
  • the middle point C is the center of a heat-resistant brick sandwiched between two adjacent electrodes 114.
  • the intermediate point C is a point where the distances from the opposite edges of two adjacent electrodes are equal. That is, the boundary m is a plane parallel to the vertical direction passing through the intermediate point C between the two electrodes 114 adjacent on the inner wall 110a and the intermediate point C between the two electrodes 114 adjacent on the inner wall 110b. Due to the boundary m, the molten glass MG is virtually separated into a plurality of quadrangular columnar areas EA corresponding to the pairs of electrodes 114.
  • the cross-sectional area S of the energized area EA of the molten glass MG is an area of a cross section parallel to the flow direction F and the vertical direction of the area EA, as shown in FIG. Accordingly, the sectional area S is determined by the product of the D (depth of the molten glass MG) height from the bottom surface 110e of the melting vessel 101 to the liquid surface 101c, and the width W 2 of the region EA.
  • the specific resistance ⁇ of the molten glass MG between each pair of electrodes 114 can be obtained by the above equation (2) using the sectional area S thus obtained.
  • the area S1 of the electrode 114 with respect to the cross-sectional area S of the energization region EA is preferably as large as possible as shown in FIG.
  • the ratio between the cross-sectional area S of the energization region EA and the area S1 of the electrode 114 is not particularly limited.
  • S1 / S is, for example, in the range of 1/3 or more and 1/2 or less due to the strength of the melting tank 101 or structural restrictions.
  • the specific resistance ⁇ of the molten glass MG can be calculated more accurately by increasing the area S1 of the electrode with respect to the cross-sectional area S of the energization area EA of the molten glass MG.
  • FIG. 6 is a diagram for explaining an example of a process for controlling the Joule heat generated in the molten glass MG based on the specific resistance ⁇ of the molten glass MG.
  • the computer 118 In the calculation of the specific resistance shown in FIG. 6 (ST12), the computer 118, based on the stored information on the voltage E, current I, cross-sectional area S and distance L of each area EA, and the above equation (2), The specific resistance ⁇ of the molten glass MG in each area EA is calculated.
  • the specific resistance ⁇ of each area EA when the molten glass MG in the melting tank 101 is in a desired melting state is calculated in advance, and the value is stored in the computer 118 as a target value of the specific resistance ⁇ . be able to.
  • a desired melting state of the molten glass MG is created by using a temperature measuring means such as a thermocouple as in the prior art, and in this state, the specific resistance is obtained by the computer 118 as described above. ⁇ may be calculated.
  • a glass substrate manufactured from molten glass MG is collected in advance and melted in a crucible or the like, and a specific resistance corresponding to the molten glass MG having a target viscosity and temperature may be obtained to obtain a target value of specific resistance ⁇ . .
  • the computer 118 compares the target value of the specific resistance ⁇ in each area EA with the calculated specific resistance ⁇ in each area EA. In the determination of the control amount shown in FIG. 6 (ST14), the computer 118 determines the control amount to be sent to the control unit 116 based on the result of the specific resistance comparison (ST13).
  • the computer 118 when the calculated specific resistance ⁇ is larger than the target value or larger than the allowable range, the computer 118 generates Joule heat generated in the molten glass MG in the area EA, Give instructions to decrease by a predetermined amount.
  • the computer 118 issues an instruction to maintain the Joule heat generated in the molten glass MG in the area EA.
  • the computer 118 increases the Joule heat generated in the molten glass MG in the area EA by a predetermined amount. Give instructions.
  • control unit 116 controls the Joule heat generated in the molten glass MG in each area EA based on the control amount instruction sent from the computer 118.
  • the control unit 116 when the control unit 116 receives an instruction to reduce Joule heat generated in the molten glass MG in a certain area EA, the control unit 116 flows into the molten glass MG between the pair of electrodes 114 corresponding to the area EA.
  • the target current value is set so that the current value becomes a constant value smaller than the original value by a predetermined value.
  • the control unit 116 determines the value or source of the current flowing in the molten glass MG between the pair of electrodes 114 corresponding to the area EA. Is set to the target current value.
  • the value of the current flowing in the molten glass MG between the pair of electrodes 114 corresponding to the area EA is:
  • the target current value is set so as to be a constant value larger by a predetermined value than the original value.
  • the control unit 116 further controls the voltage applied to the molten glass MG between each pair of electrodes 114 so as to maintain the value of the current flowing through the molten glass MG at the target current value.
  • the viscosity and temperature of the molten glass MG in each region EA are maintained in a desired state without using a temperature measuring means such as a conventional thermocouple, and the convection and melting of the molten glass MG in the melting tank 101 are maintained.
  • the state can be maintained in a desired state.
  • FIG. 7 is a diagram for explaining a process of determining the temperature of the molten glass MG from the calculated specific resistance ⁇ and controlling the Joule heat generated in the molten glass in each region EA.
  • the relationship between the temperature and the specific resistance of the molten glass having the same composition as the molten glass MG produced in the melting tank 101 is obtained in advance and recorded in the computer 118.
  • the temperature of the molten glass MG may be measured in the melting tank 101 using a temperature measuring means such as a thermocouple as in the prior art.
  • the specific resistance ⁇ with the computer 118 as described above, the relationship between the temperature of the molten glass MG and the specific resistance can be obtained.
  • these correlations may be obtained by collecting a glass substrate manufactured from the molten glass MG in advance and melting it with a crucible or the like, and measuring the temperature and specific resistance of the molten glass MG at that time.
  • the temperature of the molten glass MG can be expressed as a function of the specific resistance ⁇ , for example, F ( ⁇ ). That is, the specific resistance ⁇ of the molten glass MG and the temperature T (° C.) of the molten glass MG have a correlation represented by the following formula (1).
  • T (° C.) A / (log ( ⁇ ) + b) -273.15 (1)
  • a and b are constants depending on the glass composition.
  • the values of the constants a and b are specified by the preliminary process (ST21).
  • the values of the constants a and b are stored in the computer 118 together with the above equation (1).
  • the target temperature of the molten glass MG in each area EA is set in advance, and the value is stored in the computer 118.
  • the sampling (ST21) and specific resistance calculation (ST23) shown in FIG. 7 are the same as the sampling (ST11) and specific resistance calculation (ST12) shown in FIG.
  • the computer 118 calculates each resistance ⁇ of each area EA, constants a and b stored in advance, and the above equation (1).
  • the temperature T of the molten glass MG in the area EA is calculated.
  • the temperature T of each area EA when the molten glass MG of the melting tank 101 is in a desired melting state is calculated in advance, and the value is stored in the computer 118 as a target value of the temperature T. it can.
  • a desired melting state is created in the molten glass MG using a temperature measuring means such as a thermocouple as in the prior art, and in this state, the temperature T is set by the computer 118 as described above. It may be calculated.
  • the computer 118 compares the stored target value of the temperature T of each area EA with the calculated temperature T of each area EA.
  • the control amount determination (ST26) shown in FIG. 7 the control amount to be sent to the control unit 116 is determined based on the result of the temperature comparison (ST25).
  • the computer 118 when the calculated temperature T is higher than the target value or higher than the allowable range, the computer 118 generates Joule heat generated in the molten glass MG in the area EA by a predetermined value. Give instructions to reduce the amount of.
  • the computer 118 issues an instruction to maintain the Joule heat generated in the molten glass MG in the area EA.
  • the computer 118 instructs to increase the Joule heat generated in the molten glass MG in the area EA by a predetermined amount. Put out.
  • the Joule heat control (ST27) shown in FIG. 7 is the same as the Joule heat control (ST15) shown in FIG.
  • the viscosity and temperature of the molten glass MG in each region EA are set to a desired state without using a conventional temperature measuring device such as a thermocouple, and the molten state of the molten glass MG in the melting tank 101 is set to a desired state. Can be.
  • the molten glass MG in the vicinity of the inner walls 110c and 110d facing each other in the flow direction F is likely to become low temperature due to heat radiation from the inner walls 110c and 110d to the outside.
  • heat amount generated in the molten glass MG in the both ends of the flow direction F of the melting tank 101 is made larger than the calorie
  • FIG. 8 is a diagram for explaining the convection of the molten glass inside the melting tank 101 in the present embodiment.
  • the glass raw material is entirely introduced into the liquid surface of the molten glass MG stored in the melting tank 101, thereby producing a molten glass MG having a uniform surface temperature including the liquid surface 101c. .
  • the heating amount of the molten glass MG at both ends in the longitudinal direction of the melting tank 101 is made larger than that in the central portion is that heat is easily released from the inner walls 110c and 110d facing each other in the longitudinal direction. If such a heating amount is not adjusted, the temperature of the molten glass MG at the both end portions tends to be lower than that at the central portion. For this reason, the electric power supplied to the three pairs of electrodes 114 is greater for the electrodes 114 closer to both ends in the longitudinal direction of the melting tank 101 than for the electrodes 114 in the longitudinal center of the melting tank 101. It is preferable to set. This is the same when four or more pairs of electrodes 114 are provided in the melting tank.
  • the Joule heat generated in the molten glass MG in each region EA is controlled based on the calculated specific resistance ⁇ of the molten glass MG in each region EA. Therefore, even if the amount of heat released to the outside in each area EA is different, Joule heat generated in the molten glass MG in each area EA so as to maintain the target value of specific resistance ⁇ or the target value of temperature T. The amount of is adjusted.
  • the molten glass MG is pulled by the outflow from the outlet 104a of the molten glass MG without causing convection due to the temperature distribution of the molten glass MG in the lower layer.
  • the molten glass MG flows toward the outlet 104 a along the bottom surface of the melting tank 101 in a portion close to the bottom surface of the lower melting tank 101.
  • the influence of the flow along the bottom surface of the melting tank 101 decreases, and the molten glass MG flows so as to sink from the surface layer toward the bottom surface of the melting tank 101.
  • FIG. 9 is a view for explaining convection of molten glass inside a conventional melting tank.
  • the molten glass in the conventional melting tank, in the region A, the molten glass is partially heated so that a pot spring is formed, and convection is promoted.
  • the silica-rich heterogeneous substrate 120 is separated from the glass raw material introduction position. It is easy to collect in.
  • the opportunity for this heterogeneous substrate 120 to flow out of the outlet along the convection increases, which tends to cause unevenness in the glass composition such as striae.
  • the temperature at 10 2.5 poise of molten glass having high viscosity for example, molten glass is 1300 ° C. or higher (for example, 1300 ° C. or higher and 1650 ° C. or lower), more preferably 1500 ° C. It can be applied even to molten glass that is above (for example, 1500 ° C. or more and 1650 ° C. or less), and has an advantage that unevenness of glass composition such as striae can be suppressed as compared with the conventional manufacturing method. Is big.
  • the glass substrate manufacturing method of the present embodiment does not require an excessive voltage to emphasize the hot spring even in a molten glass having a large specific resistance of 1500 ⁇ ⁇ cm or more at 1500 ° C. It is possible to prevent current from flowing through the object. For this reason, it is possible to suppress unevenness of the glass composition while preventing ZrO 2 (zirconia), which is likely to cause devitrification of the glass, from being eluted from the inner wall of the melting tank 101 in contact with the molten glass MG. About such a molten glass with a large specific resistance, you may use the heating by a burner in the melting tank 101 together.
  • each pair of electrodes 114 are opposed to each other, the temperature in the lower layer along the first direction of the molten glass MG can be effectively equalized.
  • the electric power supplied to each pair of electrodes 114 is such that both ends are larger than the central portion in the longitudinal direction of the melting tank 101 in consideration of the release of heat from the melting tank 101. Since it is supplied, it is easy to make the temperature distribution in the flow direction F of the molten glass MG in the lower layer uniform.
  • the temperature in the lower layer of the molten glass MG is made uniform so as not to draw convection due to the temperature distribution of the molten glass. Therefore, in order to promote the convection due to the temperature distribution of the molten glass as in the past, it is not necessary to partially heat the molten glass to an excessively high temperature at the expense of elution of the refractory constituting the melting tank 101. . Thus, easy ZrO 2 cause devitrification of the glass is hardly eluted from the inner wall in contact with the molten glass MG of melting tank 101. Therefore, the manufacturing method of this embodiment is suitable for a case where the inner wall of the melting vessel 101 is constituted by a refractory material comprising ZrO 2 having excellent corrosion resistance to components.
  • the composition of the glass substrate produced in the present embodiment is composed of aluminosilicate glass, and can contain 50% by mass or more of SiO 2 (silica).
  • SiO 2 silicon
  • the composition of the glass substrate manufactured in this embodiment the SiO 2 can comprise more than 55 wt%, can further comprise SiO 2 60% by mass or more.
  • the manufacturing method of this embodiment By applying the manufacturing method of this embodiment to the aluminosilicate glass which has these compositions, glass composition nonuniformity can be suppressed more effectively compared with the past. Even if the glass composition contains 50% by mass or more of SiO 2 and easily forms a silica-rich heterogeneous substrate, the molten glass MG is melted so that convection due to the temperature distribution does not occur. Outflow from the outlet 104a can be prevented.
  • the glass raw material is always added to the liquid surface 101c so as to have a certain thickness, SiO 2 is prevented from remaining melted, and the heterogeneous substrate 120 due to SiO 2 as shown in FIG.
  • this embodiment makes the temperature distribution of the molten glass MG in the lower layer uniform so as not to cause convection due to the temperature distribution of the molten glass MG, it is necessary to heat the molten glass to an excessively high temperature as in the prior art. There is no. For this reason, elution of ZrO 2 (zirconia) from the refractory in the melting tank 101 can be prevented.
  • the upper limit of the content in the glass composition of SiO 2 is 70 wt% for example.
  • the manufacturing method of this embodiment to which aluminosilicate glass having a total of 60% by mass of SiO 2 and Al 2 O 3 and having this glass composition is applied can be compared with the conventional glass composition. Can be suppressed. Furthermore, SiO 2 and Al 2 O 3 can be contained in a total of 65% by mass or more, and SiO 2 and Al 2 O 3 can be contained in a total of 70% by mass or more.
  • the glass composition contains SiO 2 and Al 2 O 3 in a total of 60% by mass or more and easily forms a silica-rich heterogeneous substrate 120, the molten glass MG is melted so that convection due to the temperature distribution does not occur. Therefore, the silica-rich heterogeneous substrate can be prevented from flowing out from the outlet 104a.
  • the glass raw material is always added to the liquid surface 101c so as to have a certain thickness, SiO 2 is prevented from remaining melted, and the heterogeneous substrate 120 due to SiO 2 as shown in FIG.
  • the refractory constituting the melting tank ZrO 2 (zirconia) contained in the product may elute into the molten glass and cause devitrification of the glass.
  • the temperature distribution of the molten glass MG in the lower layer is made uniform so as not to cause convection due to the temperature distribution of the molten glass MG. There is no need to heat. For this reason, elution of ZrO 2 (zirconia) from the refractory in the melting tank 101 can be prevented.
  • the upper limit of the total content of SiO 2 and Al 2 O 3 is, for example, 95% by mass.
  • the glass substrate is preferably composed of aluminoborosilicate glass.
  • B 2 O 3 boron oxide
  • SiO 2 aluminoborosilicate glass
  • the glass composition of the glass substrate for example, the following can be applied.
  • the content rate display of the composition shown below is mass%. SiO 2 : 50 to 70%, B 2 O 3 : 5 to 18%, Al 2 O 3 : 0 to 25%, MgO: 0 to 10%, CaO: 0-20%, SrO: 0 to 20%, BaO: 0 to 10%, RO: 5 to 20% (where R is at least one selected from Mg, Ca, Sr and Ba, and the glass substrate contains), It is preferable that it is an alkali free glass containing.
  • compositions are applicable as a composition of a glass substrate.
  • SiO 2 50 to 70%
  • B 2 O 3 1-10%
  • Al 2 O 3 0 to 25%
  • SrO 0 to 20%
  • BaO 0 to 10%
  • RO 5-30%
  • R is the total amount of Mg, Ca, Sr and Ba
  • the glass be an alkali-free glass.
  • the glass substrate may be a glass containing a trace amount of alkali containing a trace amount of alkali metal.
  • the total of R ′ 2 O is 0.10% or more and 0.5% or less, preferably 0.20% or more and 0.5% or less (where R ′ is selected from Li, Na, and K)
  • R ′ is selected from Li, Na, and K
  • the glass substrate contains at least one kind.
  • the content of iron oxide in the glass is more preferably 0.01 to 0.2% from the viewpoint of reducing the specific resistance. Further, it is preferred not to include As 2 O 3, Sb 2 O 3 and PbO substantially.
  • the manufacturing method of this embodiment can be effectively applied to the glass substrate for liquid crystal display devices.
  • the glass substrate for a liquid crystal display device suppresses the thermal expansion of the glass substrate and does not deteriorate the characteristics of the TFT (Thin Film Transistor) formed on the glass substrate.
  • TFT Thin Film Transistor
  • Alkali metal components Li, Na and K
  • the high temperature viscosity of the molten glass MG is increased. Need to be partially heated to high temperatures.
  • the glass raw material is charged over substantially the entire liquid surface 101c of the molten glass MG, and the temperature of the molten glass MG is adjusted so that convection of the molten glass MG does not occur. Therefore, unlike the prior art, it is not necessary to partially heat the molten glass MG to a high temperature in order to create a temperature distribution of the molten glass. Therefore, the manufacturing method of this embodiment can be suitably applied to a glass substrate for a liquid crystal display device in that the temperature of the molten glass is not partially excessively increased as in the prior art.
  • the glass raw material contains SnO 2 (tin oxide) in an amount of 0.01 to 0.5% by mass as a fining agent from the viewpoint of reducing the environmental load and exhibiting an efficient fining effect.
  • SnO 2 is used as a clarifier from the viewpoint of reducing the environmental load.
  • the melting temperature is not set too high.
  • the temperature of the molten glass MG does not need to be partially heated excessively in order to emphasize the hot spring as in the conventional known manufacturing method. Therefore, elution of ZrO 2 (zirconia) from the refractory in the melting tank 101 can be prevented, and the clarification action of SnO 2 can be effectively functioned.
  • ZrO 2 zirconia
  • a heat retaining member is provided around the portion where the electrode 114 is provided on the outer side wall of the melting tank 101.
  • the heat insulating material for example, a plate member in which a heat insulating material such as glass wool or ceramic fiber is hardened in a plate shape is used.
  • the said embodiment contains the following content.
  • the temperature of the lower layer of the molten glass located below the surface layer in the depth direction of the molten glass is set such that the convection due to the temperature distribution of the molten glass does not occur in the lower layer.
  • the melting Glass is allowed to flow from the outlet to the subsequent step.
  • a plurality of pairs of electrodes are provided in the depth direction portion to flow an electric current in a direction parallel to the liquid surface to energize and heat the molten glass located in the lower layer.
  • Each pair of the plurality of pairs of electrodes faces each other in a direction orthogonal to the first direction.
  • the power supplied to the plurality of pairs of electrodes is larger than that of an electrode located at a central portion in the first direction of the melting tank in the first direction. The electrodes located on both sides of the melting tank in the first direction are higher.
  • an inner side wall of the melting tank that is in contact with the molten glass is made of a refractory containing zirconia as a component.
  • the temperature of the molten glass at 10 2.5 poise is 1300 ° C. or higher.
  • the glass substrate to be manufactured is made of aluminosilicate glass and contains 50% by mass or more of SiO 2 .
  • the glass substrate to be manufactured is made of aluminosilicate glass, and includes 60% by mass or more of SiO 2 and Al 2 O 3 in total.
  • the glass substrate to be manufactured is made of alkali-free glass or glass containing a trace amount of alkali.
  • the molten glass has a specific resistance at 1500 ° C. of 180 ⁇ ⁇ cm or more.
  • tin oxide is added as a fining agent to the glass raw material.
  • a heat retaining member is provided on the outer side wall of the melting tank around a portion where the plurality of pairs of electrodes are provided.

Abstract

A glass substrate production method that solves the problem of degradation, etc., of conventional temperature measurement means during conduction heating of molten glass and maintains at a desired state the viscosity and convection of the molten glass. The glass substrate production method includes: a step in which the molten glass is arranged between a pair of electrodes and voltage is applied thereto, and current is supplied to the molten glass and Joule heat is generated; a step in which the current value and the voltage value are measured and the specific resistance of the molten glass is calculated; and a step in which the Joule heat is controlled on the basis of the calculated specific resistance.

Description

ガラス基板の製造方法Manufacturing method of glass substrate
 本発明は、ガラス基板の製造方法に関する。 The present invention relates to a method for manufacturing a glass substrate.
 液晶ディスプレイやプラズマディスプレイなどのフラットパネルディスプレイ(以下FPDという)に用いるガラス基板は、例えば、厚さが0.5~0.7mmで、サイズが300×400mm~2850~×3050mmのものが主流である。 For example, glass substrates used for flat panel displays (hereinafter referred to as FPD) such as liquid crystal displays and plasma displays are mainly 0.5 to 0.7 mm in thickness and 300 to 400 to 2850 to 3050 mm in size. is there.
 FPD用ガラス基板の製造方法として、オーバーフローダウンドロー法が知られている。オーバーフローダウンドロー法では、成形炉において、熔融ガラスの成形体の上部から熔融ガラスを溢れさせることにより熔融ガラスからシートガラスが成形され、成形されたシートガラスが徐冷され、切断される。その後、切断されたシートガラスは、さらに、顧客の仕様に合わせて所定のサイズに切断され、洗浄、端面研磨などが行われ、FDP用ガラス基板として出荷される。 An overflow down draw method is known as a method for manufacturing a glass substrate for FPD. In the overflow downdraw method, in a forming furnace, the molten glass is made to overflow from the upper part of the molded body of the molten glass, whereby the sheet glass is formed from the molten glass, and the formed sheet glass is gradually cooled and cut. Thereafter, the cut sheet glass is further cut into a predetermined size according to customer specifications, subjected to cleaning, end face polishing, etc., and shipped as a glass substrate for FDP.
 FPD用ガラス基板のうち、特に液晶表示装置用ガラス基板は、その表面に半導体素子が形成されるため、アルカリ金属成分を全く含有しないか、または、含まれていても半導体素子等に影響を及ぼさない程度の微量であることが好ましい。
 また、ガラス基板中に泡が存在すると表示欠点の原因となるため、泡が存在するガラス基板は、FPD用ガラス基板として用いることはできない。このため、泡がガラス基板に残存しないことが求められている。
Among the glass substrates for FPD, in particular, the glass substrate for liquid crystal display devices has a semiconductor element formed on the surface thereof, and therefore does not contain an alkali metal component at all or even if it is contained, the semiconductor element is affected. It is preferable that the amount is as small as possible.
In addition, if bubbles are present in the glass substrate, it causes a display defect. Therefore, a glass substrate in which bubbles are present cannot be used as a glass substrate for FPD. For this reason, it is calculated | required that a bubble does not remain | survive in a glass substrate.
 また、ガラス基板にガラス組成のムラ(ガラス組成が均一でないこと)が存在すると、例えば脈理と呼ばれるスジ状の欠陥が発生する。この脈理は、ガラス組成の不均質に起因する熔融ガラスの粘度の違いから、成形時の熔融ガラスの表面に微細な表面凹凸を形成し、この表面凹凸がガラス基板にも残存する。このため、このガラス基板を液晶パネル用のガラス基板として、液晶パネルに組み込んだとき、セルギャップに誤差が生じ、あるいは、表示ムラを起こす原因となる。このため、ガラス基板の製造段階で脈理等のガラス組成のムラを引き起こさないようにする必要がある。 Further, when there is uneven glass composition (non-uniform glass composition) on the glass substrate, for example, streak-like defects called striae occur. This striae forms fine surface irregularities on the surface of the molten glass at the time of molding due to the difference in viscosity of the molten glass due to the inhomogeneity of the glass composition, and these surface irregularities remain on the glass substrate. For this reason, when this glass substrate is incorporated into a liquid crystal panel as a glass substrate for a liquid crystal panel, an error occurs in the cell gap or it causes display unevenness. For this reason, it is necessary not to cause unevenness of the glass composition such as striae in the manufacturing stage of the glass substrate.
 上記のようなガラス基板を製造する際に、従来から熔融ガラスに対する通電加熱が行われている。
 このような通電加熱の一例として、複数の電極対を使用するガラス熔融炉の高周波通電加熱が知られている。例えば、特開平04-367519号公報では、各電極対がそれぞれ別々の電源に接続され、且つ各電源が個別に制御されることにより、複数対の電極が電極対毎に制御される技術が開示されている。このような通電加熱を用いた熔解槽において、熔融ガラスの粘度や対流を所望の状態にするために、例えば特開平03-103328号公報に記載されているように、従来は熱電対を介して熔融ガラスの温度を測定していた。
When manufacturing the above glass substrate, the electrically heated heating with respect to a molten glass is performed conventionally.
As an example of such energization heating, high-frequency energization heating of a glass melting furnace using a plurality of electrode pairs is known. For example, Japanese Patent Laid-Open No. 04-367519 discloses a technique in which a plurality of electrodes are controlled for each electrode pair by connecting each electrode pair to a separate power source and controlling each power source individually. Has been. In such a melting tank using electric heating, in order to bring the viscosity and convection of the molten glass into a desired state, conventionally, as described in JP-A-03-103328, for example, via a thermocouple The temperature of the molten glass was measured.
特開平04-367519号公報Japanese Patent Laid-Open No. 04-367519 特開平03-103328号公報Japanese Patent Laid-Open No. 03-103328
 熱電対は例えば熔解槽内において高温にさらされるため、比較的に短時間で劣化し、正確な温度を測定できないことがある。また、ガラス原料を熔解させる装置の構造上、熱電対の設置が可能な箇所が制限されるため、熱電対により温度を測定することができる箇所は限られる。
 そこで、本発明は、熔融ガラスの通電加熱における上記の課題を解決して、熔融ガラスの粘度や対流を所望の状態に維持することができるガラス基板の製造方法を提供する。
Since the thermocouple is exposed to a high temperature in, for example, a melting tank, the thermocouple may deteriorate in a relatively short time and an accurate temperature may not be measured. Moreover, since the location where the thermocouple can be installed is limited due to the structure of the apparatus for melting the glass raw material, the location where the temperature can be measured by the thermocouple is limited.
Then, this invention solves said subject in the electrical heating of molten glass, and provides the manufacturing method of the glass substrate which can maintain the viscosity and convection of molten glass in a desired state.
 本発明の一態様であるガラス基板の製造方法は、ガラスの原料を熔解して熔融ガラスを生成する熔解工程を含む。前記熔解工程は;一対の電極間に前記熔融ガラスを配置して電圧をかけ、前記熔融ガラスに電流を流してジュール熱を発生させる工程と;前記電流の値と前記電圧の値とを測定して前記熔融ガラスの比抵抗を算出する工程と;前記算出した比抵抗に基づいて、前記ジュール熱を制御する工程と;を含む。 The manufacturing method of the glass substrate which is 1 aspect of this invention includes the melting process which melt | dissolves the raw material of glass and produces | generates molten glass. The melting step includes: placing the molten glass between a pair of electrodes and applying a voltage; passing a current through the molten glass to generate Joule heat; measuring the current value and the voltage value; And calculating the specific resistance of the molten glass; and controlling the Joule heat based on the calculated specific resistance.
 上記のジュール熱を制御する工程は、次の工程を含んでいても良い。
(1)前記熔融ガラスの粘度や対流が所望の状態になっているときに、前記電流の値と前記電圧の値とを測定して前記熔融ガラスの比抵抗を算出し、算出した比抵抗を比抵抗の目標値として設定する工程。
(2)前記算出した比抵抗と前記比抵抗の目標値とを比較する工程。
(3)前記算出した比抵抗と前記比抵抗の目標値との差が、所定の範囲内の値になるように、前記電流の値を維持又は増減させる工程。
上記(1)の工程においては、熱電対等の温度測定手段を用いて前記熔融ガラスの温度を測定し、熔融ガラスの粘度や対流を所望の状態にしてもよい。
The step of controlling the Joule heat may include the following steps.
(1) When the viscosity and convection of the molten glass are in a desired state, the current value and the voltage value are measured to calculate the specific resistance of the molten glass, and the calculated specific resistance is The process of setting as a target value of specific resistance.
(2) A step of comparing the calculated specific resistance with a target value of the specific resistance.
(3) A step of maintaining or increasing or decreasing the value of the current so that a difference between the calculated specific resistance and a target value of the specific resistance is a value within a predetermined range.
In the step (1), the temperature of the molten glass may be measured using temperature measuring means such as a thermocouple, and the viscosity and convection of the molten glass may be set to a desired state.
 熔融ガラスの比抵抗の値を算出し、その比抵抗の値に基づいて熔融ガラスに発生させるジュール熱を制御することで、熔融ガラスの粘度や対流を所望の状態に維持することができ、従来の熱電対等の温度測定手段を用いる場合の問題を解決することができる。 By calculating the specific resistance value of the molten glass and controlling the Joule heat generated in the molten glass based on the specific resistance value, the viscosity and convection of the molten glass can be maintained in a desired state. The problem in the case of using temperature measuring means such as a thermocouple can be solved.
本実施形態のガラス基板の製造方法の工程の一例を示す図である。It is a figure which shows an example of the process of the manufacturing method of the glass substrate of this embodiment. 熔解から切断までの工程を行う装置の一例を模式的に示す断面図である。It is sectional drawing which shows typically an example of the apparatus which performs the process from melting to cutting | disconnection. 熔解工程で用いる熔解槽の一例を説明する斜視図である。It is a perspective view explaining an example of the melting tank used at a melting process. 熔解槽におけるガラス原料の投入を説明する平面図である。It is a top view explaining injection | throwing-in of the glass raw material in a melting tank. (a)及び(b)は各電極対間の電流が流れる領域の説明図である。(A) And (b) is explanatory drawing of the area | region where the electric current between each electrode pair flows. 比抵抗を算出してジュール熱を制御する工程の一例を示す図である。It is a figure which shows an example of the process of calculating specific resistance and controlling Joule heat. 比抵抗から温度を算出してジュール熱を制御する工程の一例を示す図である。It is a figure which shows an example of the process of calculating temperature from specific resistance and controlling Joule heat. 熔解槽内部の熔融ガラスの対流を説明する模式的な断面図である。It is typical sectional drawing explaining the convection of the molten glass inside a melting tank. 従来の熔解槽内部の熔融ガラスの対流を説明する図である。It is a figure explaining the convection of the molten glass inside the conventional melting tank.
 以下、本実施形態のガラス基板の製造方法について説明する。図1は、本発明のガラス基板の製造方法の工程の一例を示す図である。 Hereinafter, the manufacturing method of the glass substrate of this embodiment is demonstrated. FIG. 1 is a diagram showing an example of steps of a method for producing a glass substrate according to the present invention.
 ガラス基板の製造方法は、熔解工程(ST1)と、清澄工程(ST2)と、均質化工程(ST3)と、供給工程(ST4)と、成形工程(ST5)と、徐冷工程(ST6)と、切断工程(ST7)と、を主に有する。この他に、研削工程、研磨工程、洗浄工程、検査工程、梱包工程等を有し、梱包工程で積層された複数のガラス基板は、納入先の業者に搬送される。 The glass substrate manufacturing method includes a melting step (ST1), a clarification step (ST2), a homogenization step (ST3), a supply step (ST4), a forming step (ST5), and a slow cooling step (ST6). And a cutting step (ST7). In addition, a plurality of glass substrates that have a grinding process, a polishing process, a cleaning process, an inspection process, a packing process, and the like and are stacked in the packing process are transported to a supplier.
 熔解工程(ST1)は熔解槽で行われる。熔解工程では、熔解槽に蓄えられた熔融ガラスの液面の複数の箇所にガラス原料を間欠的に分散させて投入することにより、液面を含む表層の温度が均一化した熔融ガラスを作る。さらに、熔解槽の内壁のうち、平面視で長方形の熔解槽の長手方向において対向する内壁の一方の底部に設けられた流出口から後工程に向けて熔融ガラスを流す。 The melting step (ST1) is performed in a melting tank. In the melting step, the glass raw material is intermittently dispersed and introduced into a plurality of positions on the liquid surface of the molten glass stored in the melting tank, thereby producing a molten glass having a uniform surface temperature including the liquid surface. Furthermore, molten glass is poured from the outflow port provided in one bottom part of the inner wall which opposes in the longitudinal direction of a rectangular melting tank by planar view among the inner walls of a melting tank toward a post process.
 ここで、表層の下方に位置する下層の熔融ガラスの温度を熔解槽の長手方向において均一にして、熔解槽の長手方向における熔融ガラスの温度差を可能な限り小さくする。そのために、熔融ガラスの下層を加熱するための熱量は、熔解槽の長手方向の中央部よりも熔解槽の長手方向の両端部の方が多くなるようにする。その理由は、熔融ガラスの熱が、熔解槽の長手方向の両端部において、中央部よりも奪われやすいためである。これにより、熔解槽の長手方向の熔融ガラスの温度分布に起因した対流が、下層の熔融ガラスにおいて生じないようにして、熔融ガラスの下層における温度分布を均一化させながら、熔融ガラスを流出口から後工程に流す。 Here, the temperature of the molten glass in the lower layer located below the surface layer is made uniform in the longitudinal direction of the melting tank, and the temperature difference of the molten glass in the longitudinal direction of the melting tank is made as small as possible. Therefore, the amount of heat for heating the lower layer of the molten glass is set to be larger at both ends in the longitudinal direction of the melting tank than in the central part in the longitudinal direction of the melting tank. The reason for this is that the heat of the molten glass is more easily taken away at the both ends in the longitudinal direction of the melting tank than at the center. This prevents the convection due to the temperature distribution of the molten glass in the longitudinal direction of the melting tank from occurring in the molten glass in the lower layer, and makes the molten glass from the outlet while making the temperature distribution in the lower layer of the molten glass uniform. It flows to the subsequent process.
 本実施形態において、熔融ガラスの「表層」とは、液面から熔解槽の底部に向かった深さの5%以下の範囲内の液面を含む領域を表し、熔融ガラスの「下層」とは、表層以外の領域を表す。また、流出口が設けられる「底部」とは、上記下層の一部であって、熔解槽の底面に近い領域を表す。本実施形態において、「底部」とは、熔解槽の深さ方向において底面からの深さが、液面と熔解槽の底部との間の深さの1/2以下である領域をいう。 In the present embodiment, the “surface layer” of the molten glass represents a region including the liquid surface within a range of 5% or less of the depth from the liquid surface toward the bottom of the melting tank, and the “lower layer” of the molten glass is Represents an area other than the surface layer. Moreover, the “bottom part” where the outflow port is provided is a part of the lower layer and represents a region close to the bottom surface of the melting tank. In the present embodiment, the “bottom part” refers to a region where the depth from the bottom surface in the depth direction of the melting tank is ½ or less of the depth between the liquid surface and the bottom part of the melting tank.
 ガラス原料は、熔解槽の熔融ガラスの液面の80%以上に亘って全面的に投入する。ガラス原料の投入方法は、ガラス原料を収めたバケットを反転して熔融ガラスにガラス原料を分散投入する方式を用いても良い。また、ガラス原料の投入方法は、ベルトコンベアを用いてガラス原料を搬送して分散投入する方式、あるいは略全面に一時に投入する方式でも良い。また、ガラス原料の投入方法は、スクリューフィーダによりガラス原料を分散投入する方式、あるいは略全面に一時に投入する方式でもよい。後述する実施形態では、ガラス原料はバケットを用いる投入方法によって投入される。 The glass raw material is charged entirely over 80% of the liquid surface of the molten glass in the melting tank. As a method for charging the glass raw material, a method may be used in which the bucket containing the glass raw material is inverted and the glass raw material is dispersedly charged into the molten glass. Further, the glass raw material may be charged by a method in which the glass raw material is conveyed and distributed using a belt conveyor, or a method in which the glass raw material is charged all over at once. Further, the glass raw material may be charged by a method in which the glass raw material is dispersedly supplied by a screw feeder or a method in which the glass raw material is supplied to the entire surface at once. In an embodiment described later, the glass raw material is charged by a charging method using a bucket.
 熔解槽の電極間に電圧をかけて熔融ガラスに電流を流すと、熔融ガラスはジュール熱を発生する。このジュール熱を増加させれば熔融ガラスの温度は上昇し、減少させれば熔融ガラスの温度は下降し得る。この熔融ガラスの通電による加熱のほかに、バーナーの火焔による熱を補助的に用いてガラス原料を熔解することもできる。 When a voltage is applied between the electrodes of the melting tank to pass a current through the molten glass, the molten glass generates Joule heat. If the Joule heat is increased, the temperature of the molten glass increases, and if it is decreased, the temperature of the molten glass can decrease. In addition to heating the molten glass by energization, the glass raw material can be melted by using the heat from the burner flame as an auxiliary.
 ガラス原料には清澄剤が添加される。清澄剤として、SnO,As,Sb等が知られているが、特に制限されない。しかし、環境負荷低減の点から、清澄剤としてSnO(酸化錫)を用いることが好ましい。 A fining agent is added to the glass raw material. SnO 2 , As 2 O 3 , Sb 2 O 3 and the like are known as fining agents, but are not particularly limited. However, it is preferable to use SnO 2 (tin oxide) as a clarifying agent from the viewpoint of reducing environmental burden.
 清澄工程(ST2)は、少なくとも清澄槽において行われる。清澄工程では、清澄槽内の熔融ガラスが昇温される。この過程で、清澄剤は、還元反応により酸素を放出し、後に還元剤として作用する物質となる。熔融ガラス中に含まれるO、COあるいはSOを含んだ泡は、清澄剤の還元反応により生じたOを吸収して成長し、熔融ガラスの液面に浮上して消滅する。清澄工程は、白金又は白金合金製の容器の内部で行う。 The clarification step (ST2) is performed at least in the clarification tank. In the clarification step, the temperature of the molten glass in the clarification tank is raised. In this process, the fining agent releases oxygen by a reduction reaction, and becomes a substance that later acts as a reducing agent. Bubbles containing O 2 , CO 2 or SO 2 contained in the molten glass grow by absorbing O 2 generated by the reductive reaction of the clarifying agent, and float on the liquid surface of the molten glass and disappear. The clarification step is performed inside a platinum or platinum alloy container.
 その後、清澄工程では、熔融ガラスの温度を低下させる。この過程で、清澄剤の還元反応により得られた還元剤が酸化反応をする。これにより、熔融ガラスに残存する泡中のO等のガス成分が熔融ガラス中に再吸収されて、泡が消滅する。 Thereafter, in the clarification step, the temperature of the molten glass is lowered. In this process, the reducing agent obtained by the reductive reaction of the clarifying agent undergoes an oxidation reaction. Thereby, gas components such as O 2 in the foam remaining in the molten glass are reabsorbed in the molten glass, and the foam disappears.
 清澄剤による酸化反応及び還元反応は、熔融ガラスの温度を制御することにより行われる。清澄工程は、減圧雰囲気を清澄槽につくり、熔融ガラスに存在する泡を減圧雰囲気で成長させて脱泡させる減圧脱泡方式を用いることもできる。この場合、清澄剤を用いない点で有効である。後述する実施形態では、酸化錫を清澄剤として用いる。 The oxidation reaction and the reduction reaction by the fining agent are performed by controlling the temperature of the molten glass. In the clarification step, a reduced pressure defoaming method can be used in which a reduced pressure atmosphere is created in a clarification tank, and bubbles present in the molten glass are grown in a reduced pressure atmosphere and defoamed. In this case, it is effective in that no clarifier is used. In an embodiment described later, tin oxide is used as a fining agent.
 均質化工程(ST3)では、清澄槽から延びる配管を通って供給された攪拌槽内の熔融ガラスを、スターラを用いて攪拌することにより、ガラス成分の均質化を行う。これにより、脈理等の原因であるガラスの組成ムラを低減することができる。なお、攪拌槽は1つ設けても、2つ設けてもよい。
 供給工程(ST4)では、攪拌槽から延びる配管を通して熔融ガラスが成形装置に供給される。
In the homogenization step (ST3), the glass components are homogenized by stirring the molten glass in the stirring tank supplied through the pipe extending from the clarification tank using a stirrer. Thereby, the composition unevenness of the glass which is a cause of striae or the like can be reduced. One stirring tank or two stirring tanks may be provided.
In the supply step (ST4), the molten glass is supplied to the molding apparatus through a pipe extending from the stirring tank.
 成形装置では、成形工程(ST5)及び徐冷工程(ST6)が行われる。
 成形工程(ST5)では、熔融ガラスをシートガラスに成形し、シートガラスの流れを作る。成形は、オーバーフローダウンドロー法あるいはフロート法を用いることができる。後述する本実施形態では、オーバダウンロード法が用いられる。
 徐冷工程(ST6)では、成形されて流れるシートガラスが所望の厚さになり、内部歪が生じないように、さらに、反りが生じないように冷却される。
In the molding apparatus, a molding step (ST5) and a slow cooling step (ST6) are performed.
In the forming step (ST5), the molten glass is formed into a sheet glass to make a flow of the sheet glass. For forming, an overflow down draw method or a float method can be used. In this embodiment to be described later, an over download method is used.
In the slow cooling step (ST6), the sheet glass that has been formed and flowed is cooled to a desired thickness, so that internal distortion does not occur and warpage does not occur.
 切断工程(ST7)では、切断装置において、成形装置から供給されたシートガラスを所定の長さに切断することで、板状のガラス板を得る。切断されたガラス板はさらに、所定のサイズに切断され、目標サイズのガラス基板が作られる。この後、ガラス基板の端面の研削、研磨が行われ、ガラス基板の洗浄が行われ、さらに、気泡や脈理等の異常欠陥の有無が検査された後、検査合格品のガラス板が最終製品として梱包される。 In the cutting step (ST7), in the cutting device, the sheet glass supplied from the forming device is cut into a predetermined length to obtain a plate-like glass plate. The cut glass plate is further cut into a predetermined size to produce a glass substrate of a target size. After this, the end surface of the glass substrate is ground and polished, the glass substrate is cleaned, and further, the presence of abnormal defects such as bubbles and striae is inspected. Will be packed as.
 図2は、本実施形態における熔解工程(ST1)~切断工程(ST7)を行う装置の一例を模式的に示す図である。当該装置は、図2に示すように、主に熔解装置100と、成形装置200と、切断装置300と、を有する。熔解装置100は、熔解槽101と、清澄槽102と、攪拌槽103と、ガラス供給管104,105,106と、を有する。 FIG. 2 is a diagram schematically showing an example of an apparatus for performing the melting step (ST1) to the cutting step (ST7) in the present embodiment. As shown in FIG. 2, the apparatus mainly includes a melting apparatus 100, a forming apparatus 200, and a cutting apparatus 300. The melting apparatus 100 includes a melting tank 101, a clarification tank 102, a stirring tank 103, and glass supply pipes 104, 105, and 106.
 図2に示す例の熔解装置101では、ガラス原料の投入がバケット101dを用いて行われる。清澄槽102では、熔融ガラスMGの温度を調整して、清澄剤の酸化還元反応を利用して熔融ガラスMGの清澄が行われる。さらに、攪拌槽103では、スターラ103aによって熔融ガラスMGが攪拌されて均質化される。成形装置200では、成形体210を用いたオーバーフローダウンドロー法により、熔融ガラスMGからシートガラスSGが成形される。 In the melting apparatus 101 of the example shown in FIG. 2, the glass raw material is charged using a bucket 101d. In the clarification tank 102, the temperature of the molten glass MG is adjusted, and the clarification of the molten glass MG is performed using the oxidation-reduction reaction of the clarifier. Further, in the stirring vessel 103, the molten glass MG is stirred and homogenized by the stirrer 103a. In the forming apparatus 200, the sheet glass SG is formed from the molten glass MG by the overflow down draw method using the formed body 210.
 図3は、本実施形態の熔解槽101の概略構成を説明する斜視図である。
 本実施形態において、熔解槽101は液面を含む表層の温度が均一化した熔融ガラスを作るように設計されている。ガラス原料は、熔解槽101に蓄えられた熔融ガラスMGの液面101cに対して全面的に投入される。平面視で長方形の熔解槽101の長手方向において対向する一対の内壁のうちの一方の内壁の底部に、流出口104aが設けられている。熔解槽101は、流出口104aから後工程に向けて熔融ガラスMGを流す。
FIG. 3 is a perspective view illustrating a schematic configuration of the melting tank 101 of the present embodiment.
In the present embodiment, the melting tank 101 is designed to make a molten glass in which the temperature of the surface layer including the liquid surface is uniform. The glass raw material is entirely charged into the liquid surface 101c of the molten glass MG stored in the melting tank 101. An outflow port 104a is provided at the bottom of one of the pair of inner walls facing each other in the longitudinal direction of the rectangular melting tank 101 in plan view. The melting tank 101 flows the molten glass MG from the outlet 104a toward the subsequent process.
 熔解槽101は、耐火レンガ等の耐火物により構成された内壁110を有する。熔解槽101は、内壁110で囲まれた内部空間を有する。熔解槽101の内部空間は、液槽101aと、上部空間101bとに分けられる。液槽101aは、内部空間に投入されたガラス原料が熔解してできた熔融ガラスMGを、加熱しながら収容する。上部空間101bは、熔融ガラスMGの上に形成され、ガラス原料が投入される気相である。 The melting tank 101 has an inner wall 110 made of a refractory material such as a refractory brick. The melting tank 101 has an internal space surrounded by an inner wall 110. The internal space of the melting tank 101 is divided into a liquid tank 101a and an upper space 101b. The liquid tank 101a accommodates the molten glass MG formed by melting the glass raw material charged into the internal space while heating. The upper space 101b is formed on the molten glass MG and is a gas phase into which a glass raw material is charged.
 熔解槽101の長手方向に平行な上部空間101bの内壁110には、燃料と酸素等を混合した燃焼ガスが燃焼して火炎を発するバーナー112が設けられる。バーナー112は火炎によって上部空間101bの耐火物を加熱して内壁110を高温にする。ガラス原料は、高温になった内壁110の輻射熱および高温となった気相の雰囲気によって加熱される。 The inner wall 110 of the upper space 101b parallel to the longitudinal direction of the melting tank 101 is provided with a burner 112 that emits a flame by burning combustion gas mixed with fuel and oxygen. The burner 112 heats the refractory in the upper space 101b with a flame to heat the inner wall 110 high. The glass raw material is heated by the radiant heat of the inner wall 110 that has become high temperature and the gas phase atmosphere that has become high temperature.
 熔解槽101の流出口104aが設けられた内壁110と反対側の内壁110には、上部空間101bに通じる原料投入窓101fが設けられている。この原料投入窓101fを通して、図4に示すガラス原料を収めたバケット101dが上部空間101bに出入りする。バケット101dは、コンピュータ118からの指示に従って熔融ガラスMGの液面101c上を前後左右に移動する。コンピュータ118は、制御ユニット116を通してバケット101dを作動させるように、図示されないバケット動作機構に指示を送る。 On the inner wall 110 opposite to the inner wall 110 where the outflow port 104a of the melting tank 101 is provided, a raw material charging window 101f leading to the upper space 101b is provided. Through the raw material charging window 101f, the bucket 101d containing the glass raw material shown in FIG. 4 enters and exits the upper space 101b. The bucket 101d moves back and forth and right and left on the liquid surface 101c of the molten glass MG in accordance with instructions from the computer 118. The computer 118 sends an instruction to a bucket operating mechanism (not shown) to operate the bucket 101d through the control unit 116.
 図4は、熔解槽101におけるガラス原料の投入を説明する平面図である。
 図4に示すように、ガラス原料は、熔解槽101に蓄えられた熔融ガラスMGの液面に対して全面的に投入される。これにより、液面を含む表層の温度が均一化した熔融ガラスMGが作られる。
FIG. 4 is a plan view for explaining the introduction of the glass raw material in the melting tank 101.
As shown in FIG. 4, the glass raw material is entirely charged with respect to the liquid surface of the molten glass MG stored in the melting tank 101. Thereby, molten glass MG in which the temperature of the surface layer including the liquid surface is made uniform is produced.
 熔解槽101は、バケット動作機構を備える。バケット動作機構は、コンピュータ118の指示によって、バケット101dがガラス原料を収めた状態で、バケット101dを目標とする区域に移動させ、バケット101dの上下を反転させる。バケット101dがガラス原料を投入する区域および投入する時間間隔は、熔融ガラスMGの液面101cにガラス原料が無くならないように、予め定められている。したがって、熔解槽101内部では、熔融ガラスMGの液面の略全面に投入されるので、常に熔融ガラスMGの液面101cをガラス原料が覆っている。 The melting tank 101 includes a bucket operation mechanism. In response to an instruction from the computer 118, the bucket operation mechanism moves the bucket 101d to a target area in a state where the glass raw material is stored in the bucket 101d, and flips the bucket 101d upside down. The area where the glass material is charged by the bucket 101d and the time interval for charging are determined in advance so that the glass material does not disappear on the liquid surface 101c of the molten glass MG. Therefore, in the melting tank 101, since it is poured into substantially the entire liquid surface of the molten glass MG, the glass raw material always covers the liquid surface 101c of the molten glass MG.
 このように、ガラス原料が常時液面101cを覆うようにガラス原料を熔解槽101に投入する理由の一つは、熔融ガラスMGの熱が液面101cを通して気相である上部空間101bに放射されないようにするためである。これにより、熔融ガラスMGの液面を含む表層の温度を均一化し、その温度を一定に維持し、その水平方向の温度分布を平坦化する。もう一つの理由は、ガラス原料のうち、SiO(シリカ)等の熔解性の低い(熔解温度が高い)原料を効率よく熔解させ、SiO等の原料の熔け残りを防止するためである。 As described above, one of the reasons for introducing the glass raw material into the melting tank 101 so that the glass raw material always covers the liquid surface 101c is that the heat of the molten glass MG is not radiated to the upper space 101b which is a gas phase through the liquid surface 101c. It is for doing so. Thereby, the temperature of the surface layer including the liquid surface of the molten glass MG is made uniform, the temperature is kept constant, and the temperature distribution in the horizontal direction is flattened. Another reason is to efficiently melt a raw material having a low melting property (high melting temperature) such as SiO 2 (silica) among the glass raw materials, thereby preventing unmelted raw materials such as SiO 2 .
 SiO等の熔解温度の高い原料は、他の成分、例えばB(酸化ホウ素)等の原料と混合された状態では、単独で熔解させた場合の熔解温度よりも低い温度で熔解され得る。このような原料の性質を生かすために、熔融ガラスMGの液面101c上にガラス原料が常に存在して液面101cを覆うように、ガラス原料を間欠的に分散させて投入する。これにより、B等の原料が、熔けにくいSiO等の原料とともに熔解するので、SiO等の原料の熔け残りを防止することができる。 A raw material with a high melting temperature such as SiO 2 is melted at a temperature lower than the melting temperature when it is melted alone when mixed with other components such as a raw material such as B 2 O 3 (boron oxide). obtain. In order to make use of such properties of the raw material, the glass raw material is intermittently dispersed and charged so that the glass raw material always exists on the liquid surface 101c of the molten glass MG and covers the liquid surface 101c. Accordingly, B 2 O 3 or the like of the raw material, since the melting together melted hard such as SiO 2 raw material, it is possible to prevent the remaining melted ingredients such as SiO 2.
 これに対して、ガラス原料が、熔融ガラスの液面の一部の領域のみに投入される場合、熔け難いSiO等の原料成分が熔け残り、熔融ガラスの対流によって、ガラス原料の投入位置から遠くに離れた液面に異質素地として浮遊する場合がある。このような異質素地は、熔融ガラスの対流の状態によって、熔融ガラスの下層に移動して熔解槽の流出口から流出し、後の工程に流れる場合があり、脈理等のガラス組成のムラの原因となりやすい。 On the other hand, when the glass raw material is thrown into only a partial region of the liquid surface of the molten glass, raw material components such as SiO 2 that are difficult to melt remain unmelted, and the glass raw material is convected from the pouring position of the glass raw material by convection. It may float as a heterogeneous substrate on a liquid surface that is far away. Depending on the convection state of the molten glass, such a heterogeneous substrate moves to the lower layer of the molten glass and flows out from the outlet of the melting tank, and may flow to the subsequent process. Prone to cause.
 本実施形態では、熔解槽101において、ガラス原料を、熔融ガラスMGの液面に対して全面的に投入する。したがって、熔融ガラスMGの液面を含む表層における温度が均一化される。また、SiO等の原料成分の熔け残りを防止することもできる。 In the present embodiment, in the melting tank 101, the glass raw material is entirely charged with respect to the liquid surface of the molten glass MG. Therefore, the temperature in the surface layer including the liquid level of the molten glass MG is made uniform. It is also possible to prevent the remaining melted raw material components such as SiO 2.
 熔解槽101の長手方向に延び、互いに対向する液槽101aの内壁110a,110bに、酸化錫あるいはモリブデン等の耐熱性を有する導電性材料で構成され、互いに対向する一対の電極114が、三対設けられている。本実施形態において、熔解槽101は三対の電極114を備えているが、熔解槽の大きさによっては一対の電極114のみを用いてもよい。複数対の電極114を用いる場合は、二対又は四対以上の電極114を用いても良い。 The inner walls 110a and 110b of the liquid tank 101a that extend in the longitudinal direction of the melting tank 101 and that are made of a heat-resistant conductive material such as tin oxide or molybdenum are provided with three pairs of electrodes 114 that face each other. Is provided. In the present embodiment, the melting tank 101 includes three pairs of electrodes 114, but only a pair of electrodes 114 may be used depending on the size of the melting tank. When a plurality of pairs of electrodes 114 are used, two pairs or four or more pairs of electrodes 114 may be used.
 三対の電極114は、内壁110a,110bのうち、熔融ガラスMGの下層に対応する領域に設けられている。三対の電極114はいずれも、内壁110a,110bの外側から内側まで、内壁110a,110bを貫通して延びている。図3において、各対の電極114は、手前側の電極114が図示され、奥側の電極114は図示されていない。各対の電極114は、各対の電極114間に配置された熔融ガラスMGを挟んでお互いに対向するように、内側壁110a,110bに設けられている。 The three pairs of electrodes 114 are provided in regions corresponding to the lower layer of the molten glass MG in the inner walls 110a and 110b. All three pairs of electrodes 114 extend through the inner walls 110a and 110b from the outer side to the inner side of the inner walls 110a and 110b. In FIG. 3, each pair of electrodes 114 shows the front electrode 114, and the back electrode 114 is not shown. Each pair of electrodes 114 is provided on the inner side walls 110a and 110b so as to face each other across the molten glass MG disposed between each pair of electrodes 114.
各対の電極114は、各対の電極114間に配置された熔融ガラスMGに電圧をかけて電流を流す。熔融ガラスMGに電流を流すことで、熔融ガラスMGにジュール熱を発生させ、熔融ガラスMGを加熱する。熔解槽101では、熔融ガラスMGは例えば1500℃以上に加熱される。加熱された熔融ガラスMGは、ガラス供給管104を通して清澄槽102へ送られる。 Each pair of electrodes 114 applies a voltage to the molten glass MG disposed between each pair of electrodes 114 to cause a current to flow. By passing an electric current through the molten glass MG, Joule heat is generated in the molten glass MG, and the molten glass MG is heated. In the melting tank 101, the molten glass MG is heated to, for example, 1500 ° C. or higher. The heated molten glass MG is sent to the clarification tank 102 through the glass supply pipe 104.
 図3に示す熔解槽101では、バーナー112が上部空間101bに設けられているが、バーナー112は必須ではない。例えば、1500℃における比抵抗が180Ω・cm以上の、比抵抗が比較的大きい熔融ガラスにおいて、バーナー112を補助的に用いることで、ガラス原料を効率よく熔解させることができる。 In the melting tank 101 shown in FIG. 3, the burner 112 is provided in the upper space 101b, but the burner 112 is not essential. For example, in a molten glass having a specific resistance at 1500 ° C. of 180 Ω · cm or more and a relatively large specific resistance, the glass raw material can be efficiently melted by using the burner 112 as an auxiliary.
 ガラス原料を連続的に熔解させて熔融ガラスMGを作るときには、バーナー112を用いることなくガラス原料を熔解させることも可能である。例えば、熔融ガラスMGの液面101cを全面的にガラス原料で覆うことにより、熔融ガラスMGの液面101cからの熱放射を防ぎ、熔融ガラスMGの温度の低下を抑え、下層の熔融ガラスMGの発するジュール熱によりガラス原料を熔解させることができる。 When the glass raw material is continuously melted to produce the molten glass MG, the glass raw material can be melted without using the burner 112. For example, by covering the liquid surface 101c of the molten glass MG entirely with the glass raw material, heat radiation from the liquid surface 101c of the molten glass MG is prevented, the temperature drop of the molten glass MG is suppressed, and the lower molten glass MG The glass raw material can be melted by the generated Joule heat.
 各対の電極114は、それぞれ制御ユニット116に接続されている。下層における熔融ガラスMGの温度分布を均一化するために、制御ユニット116は、電極114のそれぞれに供給する電力を、対向する一対の電極114毎に制御できるように構成されている。各対の電極114には、制御ユニット116によって単層の交流電圧が加えられる。 Each pair of electrodes 114 is connected to a control unit 116, respectively. In order to make the temperature distribution of the molten glass MG in the lower layer uniform, the control unit 116 is configured to be able to control the power supplied to each of the electrodes 114 for each pair of electrodes 114 facing each other. A single-layer AC voltage is applied to each pair of electrodes 114 by the control unit 116.
 制御ユニット116は、さらにコンピュータ118と接続されている。制御ユニット116は、各対の電極114間の熔融ガラスMGにかかる電圧の大きさと、各対の電極114間の熔融ガラスMGに流れる電流の値とを測定する。制御ユニット116は、測定した電圧と電流の値の情報を出力する。コンピュータ118は、制御ユニット116から出力されたこれらの情報を受け取る。コンピュータ118は、この電圧と電流の値の情報から、各対の電極114間の熔融ガラスMGの比抵抗を算出する。 The control unit 116 is further connected to a computer 118. The control unit 116 measures the magnitude of the voltage applied to the molten glass MG between each pair of electrodes 114 and the value of the current flowing through the molten glass MG between each pair of electrodes 114. The control unit 116 outputs information on the measured voltage and current values. The computer 118 receives these pieces of information output from the control unit 116. The computer 118 calculates the specific resistance of the molten glass MG between each pair of electrodes 114 from the information on the voltage and current values.
 コンピュータ118は、例えば、以下の式(2)に基づいて、各対の電極114間の熔融ガラスMGの比抵抗ρ(Ω・m)を算出する。 The computer 118 calculates the specific resistance ρ (Ω · m) of the molten glass MG between each pair of electrodes 114 based on, for example, the following equation (2).
 ρ=E/I×S/L …(2) Ρ = E / I × S / L (2)
 式(2)において、Eは各対の電極114間の熔融ガラスMGにかかる電圧(V)、Iは、各対の電極114間の熔融ガラスMGに流れる電流(A)、Sは各対の電極114間において電流が流れる熔融ガラスMGの断面積(m)、Lは各対の電極114の間の距離(m)である。断面積S及び長さLは、熔解槽101によって定まる固有の値である。 In the formula (2), E is a voltage (V) applied to the molten glass MG between each pair of electrodes 114, I is a current (A) flowing through the molten glass MG between each pair of electrodes 114, and S is each pair of electrodes 114. The cross-sectional area (m 2 ) of the molten glass MG through which current flows between the electrodes 114, and L is the distance (m) between each pair of electrodes 114. The cross-sectional area S and the length L are specific values determined by the melting tank 101.
 図5(a)および(b)は、各対の電極114間において電流が流れる熔融ガラスMGの断面積Sを求める方法を説明する平面図である。
 図5に示すように、各対の電極114は、熔融ガラスMGの両側に配置された内壁110a,110bに、熔融ガラスMGの流れ方向Fを横切るように、互いに対向して配置されている。また、対向する三対の電極114は、熔融ガラスMGの流れ方向Fに互いに間隔Wをあけて配置されている。ここで、間隔Wは隣接する電極114の互いに向かい合う端縁間の距離である。流れ方向Fは、熔解槽101における熔融ガラスMGの全体としての上流から下流へ向かう流れの方向を便宜的に示すものであり、内壁110a、110bと平行で流出口104aに向かう方向である。また、流れ方向Fは熔解槽101の長手方向に沿う方向である。
FIGS. 5A and 5B are plan views for explaining a method for obtaining the cross-sectional area S of the molten glass MG through which a current flows between each pair of electrodes 114.
As shown in FIG. 5, each pair of electrodes 114 is disposed on the inner walls 110 a and 110 b disposed on both sides of the molten glass MG so as to face each other so as to cross the flow direction F of the molten glass MG. The electrode 114 of the three opposed pairs are spaced W 1 from each other in the flow direction F of the molten glass MG. Here, the interval W 1 is the distance between the mutually facing edges of adjacent electrodes 114. The flow direction F indicates the flow direction from the upstream to the downstream of the molten glass MG as a whole in the melting tank 101 for convenience, and is a direction parallel to the inner walls 110a and 110b and toward the outlet 104a. The flow direction F is a direction along the longitudinal direction of the melting tank 101.
 まず、対向する一対の電極114ごとに電流が流れる領域EAを設定する。通電領域EAの境界mは、流れ方向Fにおいて隣接する二つの電極114の中間点Cを通るように設定する。中間点Cは、隣接する二つの電極114に挟まれた耐熱レンガの中心である。換言すると、中間点Cは、隣り合う二つの電極の互いに向かい合う端縁からの距離が等しい点である。すなわち、境界mは、内壁110a上で隣接する二つの電極114の間の中間点Cと、内壁110b上で隣接する二つの電極114の中間点Cとを通る鉛直方向に平行な面である。この境界mにより、熔融ガラスMGは、各対の電極114に対応する複数の四角柱状の領域EAに仮想的に分離される。 First, an area EA through which a current flows is set for each pair of electrodes 114 facing each other. The boundary m of the energization region EA is set so as to pass through the intermediate point C between the two electrodes 114 adjacent in the flow direction F. The middle point C is the center of a heat-resistant brick sandwiched between two adjacent electrodes 114. In other words, the intermediate point C is a point where the distances from the opposite edges of two adjacent electrodes are equal. That is, the boundary m is a plane parallel to the vertical direction passing through the intermediate point C between the two electrodes 114 adjacent on the inner wall 110a and the intermediate point C between the two electrodes 114 adjacent on the inner wall 110b. Due to the boundary m, the molten glass MG is virtually separated into a plurality of quadrangular columnar areas EA corresponding to the pairs of electrodes 114.
 すなわち、熔融ガラスMGの通電領域EAの断面積Sは、図5(b)に示すように、領域EAの流れ方向F及び鉛直方向に平行な断面の面積である。したがって、断面積Sは、熔解槽101の底面110eから液面101cまでの高さ(熔融ガラスMGの深さ)Dと、領域EAの幅Wとの積により求められる。このように求めた断面積Sを用いて上記の式(2)により各対の電極114間の熔融ガラスMGの比抵抗ρを求めることができる。 That is, the cross-sectional area S of the energized area EA of the molten glass MG is an area of a cross section parallel to the flow direction F and the vertical direction of the area EA, as shown in FIG. Accordingly, the sectional area S is determined by the product of the D (depth of the molten glass MG) height from the bottom surface 110e of the melting vessel 101 to the liquid surface 101c, and the width W 2 of the region EA. The specific resistance ρ of the molten glass MG between each pair of electrodes 114 can be obtained by the above equation (2) using the sectional area S thus obtained.
 上記の方法によって熔融ガラスMGの比抵抗ρを求める場合には、図5(b)に示すように、通電領域EAの断面積Sに対する電極114の面積S1はできるだけ大きいことが好ましい。通電領域EAの断面積Sと電極114の面積S1との比は、特に限定されない。本実施形態においては、熔解槽101の強度や構造上の制約から、S1/Sは、例えば1/3以上1/2以下の範囲になっている。このように、熔融ガラスMGの通電領域EAの断面積Sに対する電極の面積S1を従来よりも大きくすることで、より正確に熔融ガラスMGの比抵抗ρを算出することが可能になる。 When the specific resistance ρ of the molten glass MG is obtained by the above method, the area S1 of the electrode 114 with respect to the cross-sectional area S of the energization region EA is preferably as large as possible as shown in FIG. The ratio between the cross-sectional area S of the energization region EA and the area S1 of the electrode 114 is not particularly limited. In the present embodiment, S1 / S is, for example, in the range of 1/3 or more and 1/2 or less due to the strength of the melting tank 101 or structural restrictions. As described above, the specific resistance ρ of the molten glass MG can be calculated more accurately by increasing the area S1 of the electrode with respect to the cross-sectional area S of the energization area EA of the molten glass MG.
 上記の方法によって求めた熔融ガラスMGの比抵抗ρに基づいて、各対の電極114に対応する各領域EAの熔融ガラスMGに発生させるジュール熱を制御することができる。
 図6は熔融ガラスMGの比抵抗ρに基づいて、熔融ガラスMGに発生させるジュール熱を制御する工程の一例を説明する図である。
Based on the specific resistance ρ of the molten glass MG obtained by the above method, the Joule heat generated in the molten glass MG in each region EA corresponding to each pair of electrodes 114 can be controlled.
FIG. 6 is a diagram for explaining an example of a process for controlling the Joule heat generated in the molten glass MG based on the specific resistance ρ of the molten glass MG.
 図6に示すサンプリング(ST11)では、図5に示す各対の電極114に対応する各領域EAの電極114間の熔融ガラスMGにかかる電圧Eの情報と、各領域EAの熔融ガラスMGに流れる電流の値Iの情報が、制御ユニット116からコンピュータ118に送られる。コンピュータ118は、制御ユニット116から送られた各領域EAの電圧Eと電流Iの情報を保存する。コンピュータ118には、予め、各領域EAにおける、断面積S、電極114間の距離Lおよび、後述する熔融ガラスMGの比抵抗の目標値を保存しておく。 In the sampling (ST11) shown in FIG. 6, information on the voltage E applied to the molten glass MG between the electrodes 114 in each region EA corresponding to each pair of electrodes 114 shown in FIG. 5 and the flow to the molten glass MG in each region EA. Information on the current value I is sent from the control unit 116 to the computer 118. The computer 118 stores the voltage E and current I information of each area EA sent from the control unit 116. The computer 118 stores in advance the cross-sectional area S, the distance L between the electrodes 114, and the target value of the specific resistance of the molten glass MG described later in each area EA.
 図6に示す比抵抗の算出(ST12)では、コンピュータ118は、保存した各領域EAの電圧E、電流I、断面積Sおよび距離Lの情報と、上記の式(2)とに基づいて、各領域EAにおける熔融ガラスMGの比抵抗ρを算出する。 In the calculation of the specific resistance shown in FIG. 6 (ST12), the computer 118, based on the stored information on the voltage E, current I, cross-sectional area S and distance L of each area EA, and the above equation (2), The specific resistance ρ of the molten glass MG in each area EA is calculated.
 なお、予め、熔解槽101の熔融ガラスMGが所望の熔解状態にあるときの各領域EAの比抵抗ρを算出しておき、その値を比抵抗ρの目標値としてコンピュータ118に保存しておくことができる。比抵抗ρの目標値を決定する段階では、例えば従来のように熱電対などの温度測定手段を用いて熔融ガラスMGの所望の熔解状態を作り出し、その状態で上記のようにコンピュータ118により比抵抗ρを算出しても良い。また、予め、熔融ガラスMGから製造したガラス基板を採取して坩堝などで熔解させ、目標とする粘度および温度の熔解ガラスMGに対応する比抵抗を求めて、比抵抗ρの目標値としても良い。 In addition, the specific resistance ρ of each area EA when the molten glass MG in the melting tank 101 is in a desired melting state is calculated in advance, and the value is stored in the computer 118 as a target value of the specific resistance ρ. be able to. In the step of determining the target value of the specific resistance ρ, for example, a desired melting state of the molten glass MG is created by using a temperature measuring means such as a thermocouple as in the prior art, and in this state, the specific resistance is obtained by the computer 118 as described above. ρ may be calculated. In addition, a glass substrate manufactured from molten glass MG is collected in advance and melted in a crucible or the like, and a specific resistance corresponding to the molten glass MG having a target viscosity and temperature may be obtained to obtain a target value of specific resistance ρ. .
 図6に示す比抵抗の比較(ST13)では、コンピュータ118は、各領域EAの比抵抗ρの目標値と、算出した各領域EAの比抵抗ρとを比較する。
 図6に示す制御量の決定(ST14)では、コンピュータ118は、上記の比抵抗の比較(ST13)の結果に基づいて、制御ユニット116に送る制御量を決定する。
In the comparison of the specific resistance shown in FIG. 6 (ST13), the computer 118 compares the target value of the specific resistance ρ in each area EA with the calculated specific resistance ρ in each area EA.
In the determination of the control amount shown in FIG. 6 (ST14), the computer 118 determines the control amount to be sent to the control unit 116 based on the result of the specific resistance comparison (ST13).
 具体的には、ある領域EAにおいて、算出した比抵抗ρが目標値よりも大きいか又は許容できる範囲よりも大きい場合には、コンピュータ118はその領域EAにおいて熔融ガラスMGに発生させるジュール熱を、所定の量、減少させる指示を出す。
 ある領域EAにおいて、算出した比抵抗ρが目標値と等しいか又は許容できる範囲内である場合には、コンピュータ118はその領域EAにおいて熔融ガラスMGに発生させるジュール熱を維持する指示を出す。
 ある領域において、算出した比抵抗ρが目標値よりも小さいか又は許容できる範囲よりも小さい場合には、コンピュータ118はその領域EAにおいて熔融ガラスMGに発生させるジュール熱を、所定の量、増加させる指示を出す。
Specifically, in a certain area EA, when the calculated specific resistance ρ is larger than the target value or larger than the allowable range, the computer 118 generates Joule heat generated in the molten glass MG in the area EA, Give instructions to decrease by a predetermined amount.
In a certain area EA, when the calculated specific resistance ρ is equal to or within an allowable range, the computer 118 issues an instruction to maintain the Joule heat generated in the molten glass MG in the area EA.
In a certain area, when the calculated specific resistance ρ is smaller than the target value or smaller than the allowable range, the computer 118 increases the Joule heat generated in the molten glass MG in the area EA by a predetermined amount. Give instructions.
 図6に示すジュール熱の制御(ST15)では、制御ユニット116は、コンピュータ118から送られた制御量の指示に基づいて、各領域EAの熔融ガラスMGに発生させるジュール熱を制御する。 In the control of Joule heat shown in FIG. 6 (ST15), the control unit 116 controls the Joule heat generated in the molten glass MG in each area EA based on the control amount instruction sent from the computer 118.
 具体的には、制御ユニット116は、ある領域EAの熔融ガラスMGに発生させるジュール熱を減少させる指示を受けた場合には、その領域EAに対応する一対の電極114間の熔融ガラスMGに流れる電流の値が、元の値よりも所定の値だけ小さい一定の値になるように目標電流値を設定する。
 制御ユニット116は、ある領域EAの熔融ガラスMGに発生させるジュール熱を維持する指示を受けた場合には、その領域EAに対応する一対の電極114間の熔融ガラスMGに流れる電流の値または元の目標値を、目標電流値に設定する。
 制御ユニット116は、ある領域EAの熔融ガラスMGに発生させるジュール熱を増加させる指示を受けた場合には、その領域EAに対応する一対の電極114間の熔融ガラスMGに流れる電流の値が、元の値よりも所定の値だけ大きい一定の値になるように、目標電流値を設定する。
 制御ユニット116は、さらに、熔融ガラスMGに流れる電流の値を目標電流値に維持するように、各対の電極114間の熔融ガラスMGにかかる電圧を制御する。
Specifically, when the control unit 116 receives an instruction to reduce Joule heat generated in the molten glass MG in a certain area EA, the control unit 116 flows into the molten glass MG between the pair of electrodes 114 corresponding to the area EA. The target current value is set so that the current value becomes a constant value smaller than the original value by a predetermined value.
When the control unit 116 receives an instruction to maintain the Joule heat generated in the molten glass MG in a certain area EA, the control unit 116 determines the value or source of the current flowing in the molten glass MG between the pair of electrodes 114 corresponding to the area EA. Is set to the target current value.
When the control unit 116 receives an instruction to increase the Joule heat generated in the molten glass MG in a certain area EA, the value of the current flowing in the molten glass MG between the pair of electrodes 114 corresponding to the area EA is: The target current value is set so as to be a constant value larger by a predetermined value than the original value.
The control unit 116 further controls the voltage applied to the molten glass MG between each pair of electrodes 114 so as to maintain the value of the current flowing through the molten glass MG at the target current value.
 上記の制御により、従来の熱電対等の温度測定手段を用いることなく、各領域EAの熔融ガラスMGの粘度および温度を所望の状態に維持して、熔解槽101の熔融ガラスMGの対流および熔解の状態を所望の状態に維持することができる。 By the above control, the viscosity and temperature of the molten glass MG in each region EA are maintained in a desired state without using a temperature measuring means such as a conventional thermocouple, and the convection and melting of the molten glass MG in the melting tank 101 are maintained. The state can be maintained in a desired state.
 次に、上記の算出した比抵抗ρに基づいて各領域EAの熔融ガラスMGに発生させるジュール熱を制御する方法のひとつとして、算出した各領域EAの比抵抗ρからさらに各領域EAの熔融ガラスMGの温度を算出する方法について説明する。
 図7は、算出した比抵抗ρから熔融ガラスMGの温度を求めて、各領域EAの熔融ガラスに発生させるジュール熱を制御する工程を説明する図である。
Next, as one method for controlling the Joule heat generated in the molten glass MG in each area EA based on the calculated specific resistance ρ, the molten glass in each area EA is further calculated from the calculated specific resistance ρ in each area EA. A method of calculating the MG temperature will be described.
FIG. 7 is a diagram for explaining a process of determining the temperature of the molten glass MG from the calculated specific resistance ρ and controlling the Joule heat generated in the molten glass in each region EA.
 この方法では、まず、予備工程(ST21)として、予め、熔解槽101でつくる熔融ガラスMGと同じ成分の熔融ガラスの温度と比抵抗との関係を求め、コンピュータ118に記録しておく。熔融ガラスMGの温度と比抵抗との関係を求める段階では、熔解槽101において、例えば従来のように熱電対などの温度測定手段を用いて熔融ガラスMGの温度を測定しても良い。その上で、上記のようにコンピュータ118により比抵抗ρを算出することで、熔融ガラスMGの温度と比抵抗との関係を求めることができる。また、予め、熔解ガラスMGから製造したガラス基板を採取して坩堝などで熔解させ、その際の熔融ガラスMGの温度と比抵抗とを測定することで、これらの相関関係を得ても良い。 In this method, first, as a preliminary step (ST21), the relationship between the temperature and the specific resistance of the molten glass having the same composition as the molten glass MG produced in the melting tank 101 is obtained in advance and recorded in the computer 118. In the stage of obtaining the relationship between the temperature of the molten glass MG and the specific resistance, the temperature of the molten glass MG may be measured in the melting tank 101 using a temperature measuring means such as a thermocouple as in the prior art. Then, by calculating the specific resistance ρ with the computer 118 as described above, the relationship between the temperature of the molten glass MG and the specific resistance can be obtained. Moreover, these correlations may be obtained by collecting a glass substrate manufactured from the molten glass MG in advance and melting it with a crucible or the like, and measuring the temperature and specific resistance of the molten glass MG at that time.
 熔融ガラスMGの温度は、例えば、F(ρ)のように、比抵抗ρの関数として表すことができる。すなわち、熔融ガラスMGの比抵抗ρと熔融ガラスMGの温度T(℃)とは、下記の式(1)により表される相関関係を有している。 The temperature of the molten glass MG can be expressed as a function of the specific resistance ρ, for example, F (ρ). That is, the specific resistance ρ of the molten glass MG and the temperature T (° C.) of the molten glass MG have a correlation represented by the following formula (1).
 T(℃)= a/(log(ρ)+b)-273.15 …(1) T (° C.) = A / (log (ρ) + b) -273.15 (1)
 式(1)において、aおよびbはガラス組成に依存する定数である。
 予備工程(ST21)により、上記定数aおよびbの値が特定される。上記定数aおよびbの値は、上記の式(1)と共にコンピュータ118に保存される。また、予備工程(ST21)においては、予め、各領域EAの熔融ガラスMGの目標温度を設定し、その値をコンピュータ118に保存しておく。
In the formula (1), a and b are constants depending on the glass composition.
The values of the constants a and b are specified by the preliminary process (ST21). The values of the constants a and b are stored in the computer 118 together with the above equation (1). In the preliminary step (ST21), the target temperature of the molten glass MG in each area EA is set in advance, and the value is stored in the computer 118.
 図7に示すサンプリング(ST21)および比抵抗の算出(ST23)は、図6に示すサンプリング(ST11)および比抵抗の算出(ST12)と同様であるので、説明は省略する。
 図7に示す温度の算出(ST24)では、コンピュータ118は、算出した各領域EAの比抵抗ρと、予め保存しておいた定数aおよびbと、上記式(1)とに基づいて、各領域EAにおける熔融ガラスMGの温度Tを算出する。
The sampling (ST21) and specific resistance calculation (ST23) shown in FIG. 7 are the same as the sampling (ST11) and specific resistance calculation (ST12) shown in FIG.
In the temperature calculation (ST24) shown in FIG. 7, the computer 118 calculates each resistance ρ of each area EA, constants a and b stored in advance, and the above equation (1). The temperature T of the molten glass MG in the area EA is calculated.
 なお、予め、熔解槽101の熔融ガラスMGが所望の熔解状態にあるときの各領域EAの温度Tを算出しておき、その値を温度Tの目標値としてコンピュータ118に保存しておくことができる。温度Tの目標値を設定する段階では、例えば従来のように熱電対などの温度測定手段を用いて熔融ガラスMGに所望の熔解状態を作り出し、その状態で上記のようにコンピュータ118により温度Tを算出しても良い。 In addition, the temperature T of each area EA when the molten glass MG of the melting tank 101 is in a desired melting state is calculated in advance, and the value is stored in the computer 118 as a target value of the temperature T. it can. At the stage of setting the target value of the temperature T, for example, a desired melting state is created in the molten glass MG using a temperature measuring means such as a thermocouple as in the prior art, and in this state, the temperature T is set by the computer 118 as described above. It may be calculated.
 図7に示す温度の比較(ST25)では、コンピュータ118は、保存した各領域EAの温度Tの目標値と、算出した各領域EAの温度Tとを比較する。
 図7に示す制御量の決定(ST26)では、上記の温度の比較(ST25)の結果に基づいて、制御ユニット116に送る制御量を決定する。
In the temperature comparison shown in FIG. 7 (ST25), the computer 118 compares the stored target value of the temperature T of each area EA with the calculated temperature T of each area EA.
In the control amount determination (ST26) shown in FIG. 7, the control amount to be sent to the control unit 116 is determined based on the result of the temperature comparison (ST25).
 具体的には、ある領域EAにおいて、算出した温度Tが目標値よりも高いか又は許容できる範囲よりも高い場合には、コンピュータ118はその領域EAにおいて熔融ガラスMGに発生させるジュール熱を、所定の量、減少させる指示を出す。
 ある領域EAにおいて、算出した温度Tが目標値と等しいか又は許容できる範囲内である場合には、コンピュータ118はその領域EAにおいて熔融ガラスMGに発生させるジュール熱を維持する指示を出す。
 ある領域において、算出した温度Tが目標値よりも低いか又は許容できる範囲よりも低い場合には、コンピュータ118はその領域EAにおいて熔融ガラスMGに発生させるジュール熱を、所定の量、増加させる指示を出す。
Specifically, in a certain area EA, when the calculated temperature T is higher than the target value or higher than the allowable range, the computer 118 generates Joule heat generated in the molten glass MG in the area EA by a predetermined value. Give instructions to reduce the amount of.
In a certain area EA, when the calculated temperature T is equal to or within an allowable range, the computer 118 issues an instruction to maintain the Joule heat generated in the molten glass MG in the area EA.
In a certain area, when the calculated temperature T is lower than the target value or lower than the allowable range, the computer 118 instructs to increase the Joule heat generated in the molten glass MG in the area EA by a predetermined amount. Put out.
 図7に示すジュール熱の制御(ST27)は、図6に示すジュール熱の制御(ST15)と同様なので、説明は省略する。
 上記の制御により、従来の熱電対等の温度測定装置を用いることなく、各領域EAの熔融ガラスMGの粘度および温度を所望の状態にして、熔解槽101の熔融ガラスMGの熔解状態を所望の状態にすることができる。
The Joule heat control (ST27) shown in FIG. 7 is the same as the Joule heat control (ST15) shown in FIG.
By the above control, the viscosity and temperature of the molten glass MG in each region EA are set to a desired state without using a conventional temperature measuring device such as a thermocouple, and the molten state of the molten glass MG in the melting tank 101 is set to a desired state. Can be.
 一般に、流れ方向Fにおいて対向する内壁110c,110dの近傍の熔融ガラスMGは、内壁110c,110dから外部への熱放射により低温になり易い。このため、本実施形態では、熔解槽101の流れ方向Fの両端部において熔融ガラスMGに発生させる熱量を、中央部において熔融ガラスMGに発生させる熱量よりも多くする。これにより、下層における熔融ガラスMGの温度差を可能な限り小さくして熔融ガラスMGの温度を均一化させ、熔融ガラスMGの下層の温度分布を平坦化する。 Generally, the molten glass MG in the vicinity of the inner walls 110c and 110d facing each other in the flow direction F is likely to become low temperature due to heat radiation from the inner walls 110c and 110d to the outside. For this reason, in this embodiment, the calorie | heat amount generated in the molten glass MG in the both ends of the flow direction F of the melting tank 101 is made larger than the calorie | heat amount generated in the molten glass MG in a center part. Thereby, the temperature difference of the molten glass MG in the lower layer is made as small as possible to make the temperature of the molten glass MG uniform, and the temperature distribution of the lower layer of the molten glass MG is flattened.
 図8は、本実施形態における熔解槽101内部の熔融ガラスの対流を説明する図である。本実施形態では、ガラス原料を、熔解槽101に蓄えられた熔融ガラスMGの液面に対して全面的に投入することにより、液面101cを含む表層の温度が均一化した熔融ガラスMGを作る。 FIG. 8 is a diagram for explaining the convection of the molten glass inside the melting tank 101 in the present embodiment. In the present embodiment, the glass raw material is entirely introduced into the liquid surface of the molten glass MG stored in the melting tank 101, thereby producing a molten glass MG having a uniform surface temperature including the liquid surface 101c. .
 この熔融ガラスMGを流出口104aから後工程に向けて流すとき、下層の熔融ガラスMGにおいて、図3における熔解槽104aの長手方向(第1の方向)に沿った温度分布に起因する対流が生じないようにする。すなわち、下層の熔融ガラスMGの第1の方向に沿った温度が均一になるように、下層の熔融ガラスMGを加熱する。具体的には、熔解槽101の第1の方向の両端部において熔融ガラスMGを加熱するための熱量を、熔解槽101の第1の方向の中央部において熔融ガラスMGを加熱するための熱量よりも多くするように調整する。 When this molten glass MG is flowed from the outlet 104a toward the subsequent step, convection due to the temperature distribution along the longitudinal direction (first direction) of the melting tank 104a in FIG. 3 occurs in the lower molten glass MG. Do not. That is, the lower molten glass MG is heated so that the temperature along the first direction of the lower molten glass MG becomes uniform. Specifically, the amount of heat for heating the molten glass MG at both ends of the melting tank 101 in the first direction is greater than the amount of heat for heating the molten glass MG at the center of the melting tank 101 in the first direction. Adjust as much as possible.
 熔解槽101の長手方向において、両端部の熔融ガラスMGの加熱量を中央部のそれよりも多くするのは、長手方向において対向する内壁110c,110dから外部に熱が放出され易いためである。このような加熱量の調整を行わないと、上記両端部における熔融ガラスMGの温度は中央部に比べて低くなる傾向がある。このため、三対の電極114に供給する電力は、熔解槽101の長手方向の中央部の電極114に比べて、熔解槽101の長手方向の両端部に近い電極114の方が多くなるように設定することが好ましい。これは、熔解槽に4対以上の電極114が設けられている場合も同様である。 The reason why the heating amount of the molten glass MG at both ends in the longitudinal direction of the melting tank 101 is made larger than that in the central portion is that heat is easily released from the inner walls 110c and 110d facing each other in the longitudinal direction. If such a heating amount is not adjusted, the temperature of the molten glass MG at the both end portions tends to be lower than that at the central portion. For this reason, the electric power supplied to the three pairs of electrodes 114 is greater for the electrodes 114 closer to both ends in the longitudinal direction of the melting tank 101 than for the electrodes 114 in the longitudinal center of the melting tank 101. It is preferable to set. This is the same when four or more pairs of electrodes 114 are provided in the melting tank.
 上記のように、本実施形態では、算出した各領域EAの熔融ガラスMGの比抵抗ρに基づいて、各領域EAの熔融ガラスMGに発生させるジュール熱を制御する。そのため、各領域EAにおいて外部に放出される熱量が異なる場合であっても、比抵抗ρの目標値又は温度Tの目標値を維持するように、各領域EAの熔融ガラスMGに発生させるジュール熱の量が調整される。 As described above, in this embodiment, the Joule heat generated in the molten glass MG in each region EA is controlled based on the calculated specific resistance ρ of the molten glass MG in each region EA. Therefore, even if the amount of heat released to the outside in each area EA is different, Joule heat generated in the molten glass MG in each area EA so as to maintain the target value of specific resistance ρ or the target value of temperature T. The amount of is adjusted.
 これにより、熔融ガラスMGは、下層における熔融ガラスMGの温度分布に起因した対流を起こすことなく、熔融ガラスMGの流出口104aからの流出に引っ張られる。図8に示す矢印のように、熔融ガラスMGは、下層の熔解槽101の底面に近い部分では、熔解槽101の底面に沿って流出口104aに向かって流れる。熔解槽101の底面から離れるにしたがって、熔解槽101の底面に沿う流れの影響が小さくなり、熔融ガラスMGは表層から熔解槽101の底面に向けて沈み込むように流れる。 Thereby, the molten glass MG is pulled by the outflow from the outlet 104a of the molten glass MG without causing convection due to the temperature distribution of the molten glass MG in the lower layer. As shown by the arrows in FIG. 8, the molten glass MG flows toward the outlet 104 a along the bottom surface of the melting tank 101 in a portion close to the bottom surface of the lower melting tank 101. As the distance from the bottom surface of the melting tank 101 increases, the influence of the flow along the bottom surface of the melting tank 101 decreases, and the molten glass MG flows so as to sink from the surface layer toward the bottom surface of the melting tank 101.
 このように、本実施形態では、下層において熔融ガラスMGの温度分布に起因した対流が生じないので、異質素地等に起因したガラス組成のムラを抑制することができる。これに対して、下層において熔融ガラスMGの温度分布が均一でない場合、下層と温度が均一化した表層との間には温度差の分布が生じるので、従来のようなホットスプリングの対流ができ易い。 Thus, in this embodiment, since convection due to the temperature distribution of the molten glass MG does not occur in the lower layer, it is possible to suppress unevenness in the glass composition due to the heterogeneous substrate. On the other hand, when the temperature distribution of the molten glass MG is not uniform in the lower layer, a temperature difference distribution is generated between the lower layer and the surface layer where the temperature is uniformed, so that conventional hot spring convection can be easily performed. .
 図9は、従来の熔解槽内部の熔融ガラスの対流を説明する図である。図9に示すように、従来の熔解槽では、領域Aにおいて、ポットスプリングが形成されるように熔融ガラスは部分的に強く加熱されて対流が促進される。このため、熔融ガラスの液面の一部に投入したガラス原料のうち、SiO等の熔けにくい原料成分が対流によって移動し、例えばシリカリッチの異質素地120がガラス原料の投入位置から離れたところに溜まり易い。また、この異質素地120が対流に沿って流出口から流出する機会が増え、脈理等のガラス組成のムラの原因となりやすい。 FIG. 9 is a view for explaining convection of molten glass inside a conventional melting tank. As shown in FIG. 9, in the conventional melting tank, in the region A, the molten glass is partially heated so that a pot spring is formed, and convection is promoted. For this reason, among the glass raw materials introduced into a part of the liquid surface of the molten glass, raw material components such as SiO 2 that are not easily melted move by convection, and for example, the silica-rich heterogeneous substrate 120 is separated from the glass raw material introduction position. It is easy to collect in. In addition, the opportunity for this heterogeneous substrate 120 to flow out of the outlet along the convection increases, which tends to cause unevenness in the glass composition such as striae.
 本実施形態のガラス基板の製造方法は、粘性の高い熔融ガラス、例えば、熔融ガラスの102.5 poiseにおける温度が1300℃以上(例えば、1300℃以上1650℃以下)、より好ましくは、1500℃以上(例えば、1500℃以上1650℃以下)である熔融ガラスであっても適用することができ、従来の製造方法の場合に比べて、脈理等のガラス組成のムラを抑制することができる利点が大きい。 In the manufacturing method of the glass substrate of the present embodiment, the temperature at 10 2.5 poise of molten glass having high viscosity, for example, molten glass is 1300 ° C. or higher (for example, 1300 ° C. or higher and 1650 ° C. or lower), more preferably 1500 ° C. It can be applied even to molten glass that is above (for example, 1500 ° C. or more and 1650 ° C. or less), and has an advantage that unevenness of glass composition such as striae can be suppressed as compared with the conventional manufacturing method. Is big.
 本実施形態のガラス基板の製造方法は、1500℃における比抵抗が180Ω・cm以上である比抵抗が大きい熔融ガラスにおいても、ホットスプリングを強調するために過度な電圧をかける必要がないため、耐火物に電流が流れることを防ぐことができる。このため、ガラスの失透の原因になり易いZrO(ジルコニア)が熔解槽101の熔融ガラスMGと接する内壁から溶出することを防止しつつガラス組成のムラを抑制することができる。このような比抵抗が大きい熔融ガラスについては、熔解槽101においてバーナーによる加熱を併用してもよい。 The glass substrate manufacturing method of the present embodiment does not require an excessive voltage to emphasize the hot spring even in a molten glass having a large specific resistance of 1500 Ω · cm or more at 1500 ° C. It is possible to prevent current from flowing through the object. For this reason, it is possible to suppress unevenness of the glass composition while preventing ZrO 2 (zirconia), which is likely to cause devitrification of the glass, from being eluted from the inner wall of the melting tank 101 in contact with the molten glass MG. About such a molten glass with a large specific resistance, you may use the heating by a burner in the melting tank 101 together.
 本実施形態では、各対の電極114が互いに対向しているので、熔融ガラスMGの第1の方向に沿った下層における温度を効果的に均一化させることができる。
 本実施形態では、各対の電極114に供給する電力が、熔解槽101の熱の放出を考慮して、熔解槽101の長手方向の中央部に比べて、両端部の方が多くなるように供給されるので、下層における熔融ガラスMGの流れ方向Fにおける温度分布を均一化し易い。
In this embodiment, since each pair of electrodes 114 are opposed to each other, the temperature in the lower layer along the first direction of the molten glass MG can be effectively equalized.
In the present embodiment, the electric power supplied to each pair of electrodes 114 is such that both ends are larger than the central portion in the longitudinal direction of the melting tank 101 in consideration of the release of heat from the melting tank 101. Since it is supplied, it is easy to make the temperature distribution in the flow direction F of the molten glass MG in the lower layer uniform.
 本実施形態では、熔融ガラスの温度分布に起因する対流を引きこさないように熔融ガラスMGの下層における温度が均一化される。そのため、従来のように熔融ガラスの温度分布に起因した対流を促進させるために、熔解槽101を構成する耐火物の溶出を犠牲にして熔融ガラスを部分的に過度に高温に加熱する必要がなくなる。これにより、ガラスの失透の原因になり易いZrOが熔解槽101の熔融ガラスMGと接する内壁から溶出し難くなる。したがって、本実施形態の製造方法は、耐蝕性に優れたZrOを成分に含む耐火物によって熔解槽101の内壁が構成されている場合に適している。 In this embodiment, the temperature in the lower layer of the molten glass MG is made uniform so as not to draw convection due to the temperature distribution of the molten glass. Therefore, in order to promote the convection due to the temperature distribution of the molten glass as in the past, it is not necessary to partially heat the molten glass to an excessively high temperature at the expense of elution of the refractory constituting the melting tank 101. . Thus, easy ZrO 2 cause devitrification of the glass is hardly eluted from the inner wall in contact with the molten glass MG of melting tank 101. Therefore, the manufacturing method of this embodiment is suitable for a case where the inner wall of the melting vessel 101 is constituted by a refractory material comprising ZrO 2 having excellent corrosion resistance to components.
 以下、ガラス組成の観点から、本実施形態の効果を説明する。
 本実施形態において製造するガラス基板の組成は、アルミノシリケートガラスによって構成され、SiO(シリカ)を50質量%以上含むことができる。この組成を有するアルミノシリケートガラスに、本実施形態の製造方法を適用することで、従来に比べて効果的にガラス組成のムラを抑制することができる。 本実施形態において製造するガラス基板の組成は、SiOを55質量%以上含むことができ、さらに、SiOを60質量%以上含むことができる。
Hereinafter, the effect of the present embodiment will be described from the viewpoint of the glass composition.
The composition of the glass substrate produced in the present embodiment is composed of aluminosilicate glass, and can contain 50% by mass or more of SiO 2 (silica). By applying the manufacturing method of this embodiment to an aluminosilicate glass having this composition, unevenness of the glass composition can be effectively suppressed as compared with the conventional case. The composition of the glass substrate manufactured in this embodiment, the SiO 2 can comprise more than 55 wt%, can further comprise SiO 2 60% by mass or more.
 これらの組成を有するアルミノシリケートガラスに本実施形態の製造方法を適用することで、従来に比べてより効果的にガラス組成ムラを抑制することができる。SiOを50質量%以上含み、シリカリッチの異質素地ができ易いガラス組成であっても、熔融ガラスMGが温度分布に起因した対流が発生しないように熔解されるので、シリカリッチの異質素地が流出口104aから流出することを防止することができる。 By applying the manufacturing method of this embodiment to the aluminosilicate glass which has these compositions, glass composition nonuniformity can be suppressed more effectively compared with the past. Even if the glass composition contains 50% by mass or more of SiO 2 and easily forms a silica-rich heterogeneous substrate, the molten glass MG is melted so that convection due to the temperature distribution does not occur. Outflow from the outlet 104a can be prevented.
 また、ガラス原料が液面101cに常に一定の厚さ分存在するように投入されるので、SiOの熔け残りが防止され、図9に示すようなSiOによる異質素地120が生じ難い。 Further, since the glass raw material is always added to the liquid surface 101c so as to have a certain thickness, SiO 2 is prevented from remaining melted, and the heterogeneous substrate 120 due to SiO 2 as shown in FIG.
 SiOを50質量%以上含み熔融ガラスMGの粘性が高いガラス組成をガラス基板に用い、従来のように熔融ガラスの対流を促進した場合、熔解槽を構成する耐火物に含有するZrO(ジルコニア)が熔融ガラスに溶出し、ガラスの失透の原因になる場合がある。 When a glass composition containing 50% by mass or more of SiO 2 and having a high viscosity of the molten glass MG is used for the glass substrate and convection of the molten glass is promoted as in the prior art, ZrO 2 (zirconia) contained in the refractory constituting the melting tank ) May elute into the molten glass and cause devitrification of the glass.
 しかし、本実施形態は、熔融ガラスMGの温度分布に起因する対流を引き起こさないように下層における熔融ガラスMGの温度分布を均一化するので、従来のように熔融ガラスを過度に高温に加熱する必要がない。このため、熔解槽101の耐火物からZrO(ジルコニア)の溶出を防ぐことができる。なお、SiOのガラス組成における含有率の上限は例えば70質量%である。 However, since this embodiment makes the temperature distribution of the molten glass MG in the lower layer uniform so as not to cause convection due to the temperature distribution of the molten glass MG, it is necessary to heat the molten glass to an excessively high temperature as in the prior art. There is no. For this reason, elution of ZrO 2 (zirconia) from the refractory in the melting tank 101 can be prevented. The upper limit of the content in the glass composition of SiO 2 is 70 wt% for example.
 また、SiOとAlとを合計で60質量%以上含むことができ、このガラス組成を有するアルミノシリケートガラスを適用した本実施形態の製造方法は、従来に比べて
果的にガラス組成のムラを抑制することができる。さらに、SiOとAlとを合計で65質量%以上含むことができ、さらに、SiOとAlとを、合計で70質量%以上含むことができる。
Moreover, the manufacturing method of this embodiment to which aluminosilicate glass having a total of 60% by mass of SiO 2 and Al 2 O 3 and having this glass composition is applied can be compared with the conventional glass composition. Can be suppressed. Furthermore, SiO 2 and Al 2 O 3 can be contained in a total of 65% by mass or more, and SiO 2 and Al 2 O 3 can be contained in a total of 70% by mass or more.
 SiOとAlとを合計で60質量%以上含みシリカリッチの異質素地120ができ易いガラス組成であっても、熔融ガラスMGが温度分布に起因した対流が発生しないように熔解されるので、シリカリッチの異質素地が流出口104aから流出することを防止することができる。 Even if the glass composition contains SiO 2 and Al 2 O 3 in a total of 60% by mass or more and easily forms a silica-rich heterogeneous substrate 120, the molten glass MG is melted so that convection due to the temperature distribution does not occur. Therefore, the silica-rich heterogeneous substrate can be prevented from flowing out from the outlet 104a.
 また、ガラス原料が液面101cに常に一定の厚さ分存在するように投入されるので、SiOの熔け残りが防止され、図9に示すようなSiOによる異質素地120が生じ難い。 Further, since the glass raw material is always added to the liquid surface 101c so as to have a certain thickness, SiO 2 is prevented from remaining melted, and the heterogeneous substrate 120 due to SiO 2 as shown in FIG.
 SiOとAlとを合計で60質量%以上含み熔融ガラスMGの粘性が高いガラス組成をガラス基板に用い、従来のように熔融ガラスの対流を促進した場合、熔解槽を構成する耐火物に含有するZrO(ジルコニア)が熔融ガラスに溶出し、ガラスの失透の原因になる場合がある。 When a glass composition containing 60 mass% or more of SiO 2 and Al 2 O 3 in total and having a high viscosity of the molten glass MG is used for the glass substrate, and convection of the molten glass is promoted as in the conventional case, the refractory constituting the melting tank ZrO 2 (zirconia) contained in the product may elute into the molten glass and cause devitrification of the glass.
 しかし、本実施形態は、熔融ガラスMGの温度分布に起因する対流を引き起こさないように下層における熔融ガラスMGの温度分布を均一化するので、従来のように熔融ガラスを部分的に過度に高温に加熱する必要がない。このため、熔解槽101の耐火物からZrO(ジルコニア)の溶出を防ぐことができる。なお、ガラス組成において、SiOとAlとの合計の含有率の上限は、例えば95質量%である。 However, in the present embodiment, the temperature distribution of the molten glass MG in the lower layer is made uniform so as not to cause convection due to the temperature distribution of the molten glass MG. There is no need to heat. For this reason, elution of ZrO 2 (zirconia) from the refractory in the melting tank 101 can be prevented. In the glass composition, the upper limit of the total content of SiO 2 and Al 2 O 3 is, for example, 95% by mass.
 また、ガラス基板は、アルミノボロシリケートガラスで構成されることが好ましい。B(酸化ホウ素)は、SiOに比べて低温で熔解し、しかも、SiOの熔解温度を低下させる。したがって、SiOの含有率が高いガラス組成においては、Bを含有させることは、異質素地120(図9参照)を生じさせ難い点で有効である。 The glass substrate is preferably composed of aluminoborosilicate glass. B 2 O 3 (boron oxide) were melted at a low temperature as compared with SiO 2, moreover, to lower the melting temperature of the SiO 2. Therefore, in a glass composition having a high SiO 2 content, it is effective to contain B 2 O 3 because it is difficult to produce the heterogeneous substrate 120 (see FIG. 9).
 ガラス基板のガラス組成は例えば以下のものを適用することができる。以下示す組成の含有率表示は、質量%である。
SiO:50~70%、
:5~18%、
Al:0~25%、
MgO:0~10%、
CaO:0~20%、
SrO:0~20%、
BaO:0~10%、
RO:5~20%(ただし、RはMg、Ca、Sr及びBaから選ばれる少なくとも1種であり、ガラス基板が含有するものである)、
を含有する無アルカリガラスであることが好ましい。
As the glass composition of the glass substrate, for example, the following can be applied. The content rate display of the composition shown below is mass%.
SiO 2 : 50 to 70%,
B 2 O 3 : 5 to 18%,
Al 2 O 3 : 0 to 25%,
MgO: 0 to 10%,
CaO: 0-20%,
SrO: 0 to 20%,
BaO: 0 to 10%,
RO: 5 to 20% (where R is at least one selected from Mg, Ca, Sr and Ba, and the glass substrate contains),
It is preferable that it is an alkali free glass containing.
 また、ガラス基板の組成として、以下の組成を適用することができる。
SiO:50~70%、
:1~10%、
Al:0~25%、
MgO:0~10%、
CaO:0~20%、
SrO:0~20%、
BaO:0~10%、
RO:5~30%(ただし、RはMg、Ca、Sr及びBaの合量)、
を含有する無アルカリガラスであることも、同様に好ましい。
Moreover, the following compositions are applicable as a composition of a glass substrate.
SiO 2 : 50 to 70%,
B 2 O 3 : 1-10%,
Al 2 O 3 : 0 to 25%,
MgO: 0 to 10%,
CaO: 0-20%,
SrO: 0 to 20%,
BaO: 0 to 10%,
RO: 5-30% (where R is the total amount of Mg, Ca, Sr and Ba),
Similarly, it is also preferable that the glass be an alkali-free glass.
 なお、本実施形態では無アルカリガラスとしたが、ガラス基板はアルカリ金属を微量含んだアルカリ微量含有ガラスであってもよい。アルカリ金属を含有させる場合、R’Oの合計が0.10%以上0.5%以下、好ましくは0.20%以上0.5%以下(ただし、R’はLi、Na及びKから選ばれる少なくとも1種であり、ガラス基板が含有するものである)含むことが好ましい。また、ガラスの熔解を容易にするために、比抵抗を低下させるという観点から、ガラス中の酸化鉄の含有量が0.01~0.2%であることがさらに好ましい。また、As、SbおよびPbOを実質的に含まないことが好ましい。 Although the alkali-free glass is used in this embodiment, the glass substrate may be a glass containing a trace amount of alkali containing a trace amount of alkali metal. When an alkali metal is contained, the total of R ′ 2 O is 0.10% or more and 0.5% or less, preferably 0.20% or more and 0.5% or less (where R ′ is selected from Li, Na, and K) It is preferable that the glass substrate contains at least one kind. In order to facilitate melting of the glass, the content of iron oxide in the glass is more preferably 0.01 to 0.2% from the viewpoint of reducing the specific resistance. Further, it is preferred not to include As 2 O 3, Sb 2 O 3 and PbO substantially.
 本実施形態の製造方法は、液晶表示装置用ガラス基板に効果的に適用できる。液晶表示装置用ガラス基板は、ガラス基板における熱膨張を抑制し、かつ、ガラス基板に形成されるTFT(Thin Film Transistor)の特性を低下させないために、上述したように、ガラス組成にアルカリ金属成分(Li、Na及びK)を含ませないか、含ませても微量であることが好ましい。
 しかし、アルカリ金属成分(Li、Na及びK)を含ませないか、含ませても微量である場合、熔融ガラスMGの高温粘性が高くなるため、強いホットスプリングを作るためには、熔融ガラスMGを部分的に高温に加熱する必要がある。
The manufacturing method of this embodiment can be effectively applied to the glass substrate for liquid crystal display devices. As described above, the glass substrate for a liquid crystal display device suppresses the thermal expansion of the glass substrate and does not deteriorate the characteristics of the TFT (Thin Film Transistor) formed on the glass substrate. (Li, Na, and K) are not included, or even if included, a trace amount is preferable.
However, when alkali metal components (Li, Na and K) are not contained or are contained in a very small amount, the high temperature viscosity of the molten glass MG is increased. Need to be partially heated to high temperatures.
 これに対して、本実施形態では、熔融ガラスMGの液面101cの略全面にガラス原料は投入され、しかも、熔融ガラスMGの対流が生じないように熔融ガラスMGの温度は調整される。そのため、従来のように、熔融ガラスの温度分布を作るために熔融ガラスMGを部分的に高温に加熱する必要がなくなる。したがって、本実施形態の製造方法は、従来のように熔融ガラスの温度を部分的に過度に高くしない点で、液晶表示装置用ガラス基板に好適に適用できる。 On the other hand, in the present embodiment, the glass raw material is charged over substantially the entire liquid surface 101c of the molten glass MG, and the temperature of the molten glass MG is adjusted so that convection of the molten glass MG does not occur. Therefore, unlike the prior art, it is not necessary to partially heat the molten glass MG to a high temperature in order to create a temperature distribution of the molten glass. Therefore, the manufacturing method of this embodiment can be suitably applied to a glass substrate for a liquid crystal display device in that the temperature of the molten glass is not partially excessively increased as in the prior art.
 この他に、ガラス原料は、清澄剤として、SnO(酸化錫)を0.01~0.5質量%含むことが、環境負荷を低減する一方、効率よい清澄効果を発揮させる点で、好ましい。本実施形態では、環境負荷低減の点から、清澄剤としてSnOを用いるが、SnOの清澄作用を効果的に機能させるためには、熔解温度を高くしすぎないことが好ましい。 In addition to this, it is preferable that the glass raw material contains SnO 2 (tin oxide) in an amount of 0.01 to 0.5% by mass as a fining agent from the viewpoint of reducing the environmental load and exhibiting an efficient fining effect. . In this embodiment, SnO 2 is used as a clarifier from the viewpoint of reducing the environmental load. However, in order to effectively function the clarification action of SnO 2 , it is preferable that the melting temperature is not set too high.
 本実施形態では、熔融ガラスMGの温度を従来の公知の製造方法のように、ホットスプリングを強調するために熔融ガラスを部分的に過度に加熱する必要がない。そのため、熔解槽101の耐火物からZrO(ジルコニア)の溶出を防ぐことができる他、SnOの清澄作用を効果的に機能させることができる。 In the present embodiment, the temperature of the molten glass MG does not need to be partially heated excessively in order to emphasize the hot spring as in the conventional known manufacturing method. Therefore, elution of ZrO 2 (zirconia) from the refractory in the melting tank 101 can be prevented, and the clarification action of SnO 2 can be effectively functioned.
 また、本実施形態では、熔融ガラスMGの下層における温度を熔解槽101内でより効果的に均一化するために、熔解槽101の外側側壁には、電極114が設けられる部分の周りに保温部材が設けられることが好ましい。保温材として、例えば、グラスウールやセラミックファイバ等の断熱材を板状に固めた板部材等が用いられる。これにより、熔解槽101の外側側壁からの放熱を防ぐことができ、熔融ガラスMGの温度を熔解槽101内でより効果的に均一にし、熔融ガラスMGの対流をより一層低減することができる。 Moreover, in this embodiment, in order to equalize the temperature in the lower layer of the molten glass MG more effectively in the melting tank 101, a heat retaining member is provided around the portion where the electrode 114 is provided on the outer side wall of the melting tank 101. Is preferably provided. As the heat insulating material, for example, a plate member in which a heat insulating material such as glass wool or ceramic fiber is hardened in a plate shape is used. Thereby, the heat radiation from the outer side wall of the melting tank 101 can be prevented, the temperature of the molten glass MG can be made more uniform in the melting tank 101, and the convection of the molten glass MG can be further reduced.
 以上、本発明の好ましい実施形態を説明したが、本発明は上記の実施形態に限定されることはない。本発明の趣旨を逸脱しない範囲で、構成の付加、省略、置換、およびその他の変更が可能である。本発明は前述した説明によって限定されることはなく、添付のクレームの範囲によってのみ限定される。 The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. Additions, omissions, substitutions, and other modifications can be made without departing from the spirit of the present invention. The present invention is not limited by the above description, but only by the scope of the appended claims.
 また、上記実施形態は、以下の内容を含んでいる。
(1)ガラス基板の製造方法であって、ガラス原料を熔解槽で熔解する熔解工程を含む。前記熔解工程では、ガラス原料を、熔解槽に蓄えられた熔融ガラスの液面の略全面に投入することにより、液面を含む表層の温度が均一化した熔融ガラスを作る。前記熔解槽の内側側壁のうち、第1の方向に向く内側側壁の底部に設けられた流出口から後工程に向けて前記熔融ガラスを流す。前記熔融ガラスを流すとき、熔融ガラスの深さ方向において前記表層より下方に位置する前記熔融ガラスの下層の温度を、前記下層において前記熔融ガラスの温度分布に起因した対流が生じないように、前記熔解槽の前記第1の方向の両端部に位置する熔融ガラスに与える熱量を少なくとも調整することにより、前記下層の熔融ガラスの前記第1の方向に沿った温度分布を均一化させながら、前記熔融ガラスを前記流出口から前記後工程に流す。
(2)(1)のガラス基板の製造方法において、前記下層における前記温度分布を均一化させるために、前記熔解槽の前記第1の方向に平行な内側側壁のうち、前記下層に対応する前記深さ方向の部分に、前記液面に平行な方向に電流を流して前記下層に位置する熔融ガラスを通電加熱する複数対の電極が設けられる。前記複数対の電極のそれぞれの対は、前記第1の方向に直交する方向に向いてお互いに対向している。
(3)(2)のガラス基板の製造方法において、前記複数対の電極に供給する電力は、前記第1の方向の前記熔解槽の前記第1の方向の中央部に位置する電極に比べて、前記第1の方向の前記熔解槽の両側に位置する電極の方が高い。
(4)(1)~(3)のいずれかのガラス基板の製造方法において、前記熔解槽の前記熔融ガラスと接する内側側壁は、ジルコニアを成分に含む耐火物によって構成されている。
(5)(1)~(3)のいずれかのガラス基板の製造方法において、前記熔融ガラスの102.5poiseにおける温度は、1300℃以上である。
(6)(1)~(3)のいずれかのガラス基板の製造方法において、前記製造されるガラス基板は、アルミノシリケートガラスで構成され、SiOを50質量%以上含む。
(7)(6)のガラス基板の製造方法において、前記製造されるガラス基板は、アルミノシリケートガラスで構成され、SiOとAlとを合計で60質量%以上含む。
(8)(1)~(7)のいずれかのガラス基板の製造方法において、前記製造されるガラス基板は、無アルカリガラスあるいはアルカリ微量含有ガラスで構成される。
(9)(1)~(8)のいずれかのガラス基板の製造方法において、前記熔融ガラスの1500℃における比抵抗は、180Ω・cm以上である。
(10)(1)~(9)のいずれかのガラス基板の製造方法において、前記ガラス原料には、酸化錫が清澄剤として添加されている。
(11)(2)のガラス基板の製造方法において、前記熔解槽の外側側壁には、前記複数対の電極が設けられる部分の周りに保温部材が設けられる。
Moreover, the said embodiment contains the following content.
(1) It is a manufacturing method of a glass substrate, Comprising: The melting process of melting a glass raw material with a melting tank is included. In the melting step, a glass raw material is introduced into substantially the entire liquid surface of the molten glass stored in the melting tank, thereby producing a molten glass having a uniform surface layer temperature including the liquid surface. Of the inner side wall of the melting tank, the molten glass is caused to flow from the outlet provided at the bottom of the inner side wall facing the first direction toward the subsequent step. When flowing the molten glass, the temperature of the lower layer of the molten glass located below the surface layer in the depth direction of the molten glass is set such that the convection due to the temperature distribution of the molten glass does not occur in the lower layer. While making the temperature distribution along the first direction of the lower molten glass uniform by adjusting at least the amount of heat given to the molten glass located at both ends in the first direction of the melting tank, the melting Glass is allowed to flow from the outlet to the subsequent step.
(2) In the manufacturing method of the glass substrate of (1), in order to make the temperature distribution in the lower layer uniform, the inner side wall parallel to the first direction of the melting tank corresponds to the lower layer. A plurality of pairs of electrodes are provided in the depth direction portion to flow an electric current in a direction parallel to the liquid surface to energize and heat the molten glass located in the lower layer. Each pair of the plurality of pairs of electrodes faces each other in a direction orthogonal to the first direction.
(3) In the method for manufacturing a glass substrate according to (2), the power supplied to the plurality of pairs of electrodes is larger than that of an electrode located at a central portion in the first direction of the melting tank in the first direction. The electrodes located on both sides of the melting tank in the first direction are higher.
(4) In the method for manufacturing a glass substrate according to any one of (1) to (3), an inner side wall of the melting tank that is in contact with the molten glass is made of a refractory containing zirconia as a component.
(5) In the method for producing a glass substrate according to any one of (1) to (3), the temperature of the molten glass at 10 2.5 poise is 1300 ° C. or higher.
(6) In the method for manufacturing a glass substrate according to any one of (1) to (3), the glass substrate to be manufactured is made of aluminosilicate glass and contains 50% by mass or more of SiO 2 .
(7) In the method for manufacturing a glass substrate according to (6), the glass substrate to be manufactured is made of aluminosilicate glass, and includes 60% by mass or more of SiO 2 and Al 2 O 3 in total.
(8) In the method for manufacturing a glass substrate according to any one of (1) to (7), the glass substrate to be manufactured is made of alkali-free glass or glass containing a trace amount of alkali.
(9) In the method for producing a glass substrate according to any one of (1) to (8), the molten glass has a specific resistance at 1500 ° C. of 180 Ω · cm or more.
(10) In the method for producing a glass substrate according to any one of (1) to (9), tin oxide is added as a fining agent to the glass raw material.
(11) In the method for manufacturing a glass substrate according to (2), a heat retaining member is provided on the outer side wall of the melting tank around a portion where the plurality of pairs of electrodes are provided.
100 熔解装置
101 熔解槽
101a 液槽
101b 上部空間
101c 液面
101d バケット
101f 原料投入窓
102 清澄槽
103 攪拌槽
103a スターラ
104,105,106 ガラス供給管
110 内壁
110a,110b,110c,110d 内壁
110e 底面
112 バーナー
114 電極
116 制御ユニット
118 コンピュータ
120 異質素地
200 成形装置
210 成形体
300 切断装置
DESCRIPTION OF SYMBOLS 100 Melting apparatus 101 Melting tank 101a Liquid tank 101b Upper space 101c Liquid surface 101d Bucket 101f Raw material injection | throwing-in window 102 Clarification tank 103 Stirrer tank 103a Stirrer 104,105,106 Glass supply pipe 110 Inner wall 110a, 110b, 110c, 110d Inner wall 110e Bottom 112 Burner 114 Electrode 116 Control unit 118 Computer 120 Heterogeneous substrate 200 Molding device 210 Molded body 300 Cutting device

Claims (12)

  1.  ガラスの原料を熔解して熔融ガラスを生成する熔解工程を含み、
     前記熔解工程は、
     一対の電極間に前記熔融ガラスを配置して電圧をかけ、前記熔融ガラスに電流を流してジュール熱を発生させる工程と、
     前記電流の値と前記電圧の値とを測定して前記熔融ガラスの比抵抗を算出する工程と、
     前記算出した比抵抗に基づいて、前記ジュール熱を制御する工程と、を含む
     ガラス基板の製造方法。
    Including a melting step of melting glass raw material to produce molten glass,
    The melting step
    Placing the molten glass between a pair of electrodes, applying a voltage, and passing a current through the molten glass to generate Joule heat;
    Calculating the specific resistance of the molten glass by measuring the value of the current and the value of the voltage;
    And a step of controlling the Joule heat based on the calculated specific resistance.
  2.  前記熔解工程において、前記一対の電極を複数対用い、前記一対の電極ごとに前記電流が流れる領域を設定し、
     前記比抵抗を算出する工程において、前記領域ごとに前記比抵抗を算出し、
     前記ジュール熱を制御する工程において、前記領域ごとに前記ジュール熱を制御する、
     請求項1に記載のガラス基板の製造方法。
    In the melting step, using a plurality of pairs of the pair of electrodes, setting a region where the current flows for each pair of electrodes,
    In the step of calculating the specific resistance, the specific resistance is calculated for each region,
    In the step of controlling the Joule heat, the Joule heat is controlled for each region.
    The manufacturing method of the glass substrate of Claim 1.
  3.  前記熔解工程は、
     前記熔融ガラスの温度と前記熔融ガラスの比抵抗との相関関係を得る予備工程を有し、
     前記ジュール熱を制御する工程は、
     前記熔融ガラスの目標温度を設定する工程と、
     前記相関関係と、前記算出した比抵抗とに基づいて前記熔融ガラスの温度を算出する工程と、
     前記算出した温度と前記目標温度とを比較した結果に基づいて、前記熔融ガラスに発生させるジュール熱を制御する工程と、を含む
     請求項1に記載のガラス基板の製造方法。
    The melting step
    A preliminary step of obtaining a correlation between the temperature of the molten glass and the specific resistance of the molten glass;
    The step of controlling the Joule heat includes
    Setting a target temperature of the molten glass;
    Calculating the temperature of the molten glass based on the correlation and the calculated resistivity;
    The method for manufacturing a glass substrate according to claim 1, further comprising: controlling Joule heat generated in the molten glass based on a result of comparing the calculated temperature and the target temperature.
  4.  前記熔解工程において、前記一対の電極を複数対用い、前記一対の電極ごとに前記電流が流れる領域を設定し、
     前記比抵抗を算出する工程において、前記領域ごとに前記比抵抗を算出すると共に、
     前記温度を算出する工程において、前記領域ごとに前記温度を算出し、
     前記ジュール熱を制御する工程において、前記領域ごとに前記ジュール熱を制御する、
     請求項3に記載のガラス基板の製造方法。
    In the melting step, using a plurality of pairs of the pair of electrodes, setting a region where the current flows for each pair of electrodes,
    In the step of calculating the specific resistance, the specific resistance is calculated for each region,
    In the step of calculating the temperature, the temperature is calculated for each region,
    In the step of controlling the Joule heat, the Joule heat is controlled for each region.
    The manufacturing method of the glass substrate of Claim 3.
  5.  前記ジュール熱を制御する工程は、
     前記算出した温度を前記目標温度に維持するように前記熔融ガラスにジュール熱を発生させる前記電流値を求め、その電流値を目標電流値に設定する工程と
     前記電流値を前記目標電流値に維持するように、前記電圧を制御する工程と、を含む
     請求項3または4に記載のガラス基板の製造方法。
    The step of controlling the Joule heat includes
    Obtaining the current value for generating Joule heat in the molten glass so as to maintain the calculated temperature at the target temperature, and setting the current value to the target current value; and maintaining the current value at the target current value The method for manufacturing the glass substrate according to claim 3, further comprising: controlling the voltage.
  6.  前記予備工程において、
     前記温度をTとし、前記比抵抗をρとし、前記相関関係を表す式:
     T(℃)=a/(log(ρ)+b)-273.15 …(1)
     における定数a及びbを求め、
     前記温度を算出する工程において、
     前記式(1)に前記比抵抗ρを代入して前記温度Tを算出する、
     請求項3から5のいずれか一項に記載のガラス基板の製造方法。
    In the preliminary step,
    The temperature is T, the specific resistance is ρ, and the equation expressing the correlation:
    T (° C.) = A / (log (ρ) + b) −273.15 (1)
    Find the constants a and b in
    In the step of calculating the temperature,
    The temperature T is calculated by substituting the specific resistance ρ into the equation (1).
    The manufacturing method of the glass substrate as described in any one of Claim 3 to 5.
  7.  前記一対の電極は、前記熔融ガラスの両側に、前記熔融ガラスの上流から下流への流れ方向を横切るように互いに対向して配置され、
     前記複数対の電極が、前記流れ方向に互いに間隔をあけて配置され、
     前記領域の境界を、前記流れ方向において隣接する前記電極の中間点を通るように設定する、
     請求項2または4に記載のガラス基板の製造方法。
    The pair of electrodes are arranged on both sides of the molten glass so as to face each other so as to cross the flow direction from the upstream to the downstream of the molten glass,
    The plurality of pairs of electrodes are spaced apart from each other in the flow direction;
    The boundary of the region is set to pass through the midpoint of the electrodes adjacent in the flow direction;
    The manufacturing method of the glass substrate of Claim 2 or 4.
  8.  前記比抵抗を算出する工程において、
     前記電流値をIとし、前記電圧をEとし、前記電流が流れる前記熔融ガラスの断面積をSとし、前記一対の電極の間の距離Lとし、前記比抵抗をρとして、これらの関係を表す式: ρ=E/I×S/L …(2)
     に基づいて、前記比抵抗ρを算出する、
     請求項1から7のいずれかに記載のガラス基板の製造方法。
    In the step of calculating the specific resistance,
    The current value is I, the voltage is E, the sectional area of the molten glass through which the current flows is S, the distance L between the pair of electrodes, the specific resistance is ρ, and these relations are expressed. Formula: ρ = E / I × S / L (2)
    The specific resistance ρ is calculated based on
    The manufacturing method of the glass substrate in any one of Claim 1 to 7.
  9.  前記熔解工程において、
     前記原料を、前記熔融ガラスの液面を覆うように分散して投入する、
     請求項1から8のいずれかに記載のガラス基板の製造方法。
    In the melting step,
    The raw material is dispersed and introduced so as to cover the liquid surface of the molten glass,
    The manufacturing method of the glass substrate in any one of Claim 1 to 8.
  10.  前記電極は、酸化錫電極である、
     請求項1から9のいずれかに記載のガラス基板の製造方法。
    The electrode is a tin oxide electrode;
    The manufacturing method of the glass substrate in any one of Claim 1 to 9.
  11.  前記熔解工程の後に、
     前記熔融ガラスを清澄する工程と、
     前記熔融ガラスをガラス基板に成形する工程と、
     を有し、
     前記熔融ガラスを清澄する工程を白金又は白金合金製の容器の内部で行う、
     請求項1から10のいずれかに記載のガラス基板の製造方法。
    After the melting process,
    Clarifying the molten glass;
    Forming the molten glass into a glass substrate;
    Have
    The step of clarifying the molten glass is performed inside a container made of platinum or a platinum alloy.
    The manufacturing method of the glass substrate in any one of Claim 1 to 10.
  12.  前記ガラス基板は、フラットパネルディスプレイ用のガラス基板である、
     請求項1から11のいずれかに記載のガラス基板の製造方法。  
    The glass substrate is a glass substrate for a flat panel display,
    The manufacturing method of the glass substrate in any one of Claims 1-11.
PCT/JP2012/002252 2011-03-31 2012-03-30 Glass substrate production method WO2012132473A1 (en)

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