WO2012129459A1 - Solutions autonettoyantes pour implantation de carbone - Google Patents

Solutions autonettoyantes pour implantation de carbone Download PDF

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Publication number
WO2012129459A1
WO2012129459A1 PCT/US2012/030228 US2012030228W WO2012129459A1 WO 2012129459 A1 WO2012129459 A1 WO 2012129459A1 US 2012030228 W US2012030228 W US 2012030228W WO 2012129459 A1 WO2012129459 A1 WO 2012129459A1
Authority
WO
WIPO (PCT)
Prior art keywords
solution
benzyl
ion source
cleaning agent
torr
Prior art date
Application number
PCT/US2012/030228
Other languages
English (en)
Inventor
Ce Ma
Kee-Chan Kim
Original Assignee
Linde Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Linde Aktiengesellschaft filed Critical Linde Aktiengesellschaft
Publication of WO2012129459A1 publication Critical patent/WO2012129459A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain

Definitions

  • the present invention relates to self cleaning compounds for use as carbon implantation sources.
  • US J ultra-shallow junctions
  • Aromatic Carbon implant technology is also available from Axcelis Technologies. Those heavy carbon-based PAI methods have displayed advantages in performance and cost. They are also useful in making source and drain stressor materials. However, formation of hydrocarbon film residue in ion source chambers is a critical issue in this technology.
  • the present invention provides improved methods and formulas for use in the PAI of substrates used in semiconductor manufacturing.
  • the present invention relates to methods and formulas for providing implantation ions to accomplish PAI of substrates, particularly for the formation of ultra-shallow junctions.
  • This source may be provided in a liquid sub-atmospheric pressure package, such as the Genii technology available from the Linde Group.
  • the compound liquid vapor pressure should be greater than 1 Torr at temperatures below 100°C, and the preferable vapor pressure is greater than 5 Torr and less than lOOTorr at temperatures between 10°C and 100°C.
  • the C7 ions upon ionization, the C7 ions are highly concentrated in mass spectra with the C7 ion (with a mass about 91 amu, C 7 H 7 + ) being the most abundant ion peak in the mass spectra.
  • the cleaning agent(s) dissociates from the parent molecule upon ionization and produces highly concentrated and reactive neutral or charged radicals. These radicals then react with hydrocarbon residue to form volatile gas produces, such as, C0 2 , CO, H 2 0, H 2 S, CH 4 , NH 3 , CC14, or the like.
  • the cleaning agent compound could contain reactive oxygen function groups but it is not a source for C7 ion.
  • the cleaning agent produces volatile products that help to avoid the formation of hydrocarbon film residue inside of the chamber.
  • the cleaning agent may also produce oxygen, chlorine, nitrogen, or fluorine radicals to remove the hydrocarbon residue.
  • the cleaning capacity of the cleaning agent may be reduced, leading to the need for downtime cleaning of the chamber.
  • a number of cleaning agents having comparable vapor pressures may be used in the present invention.
  • the vapor pressures of 1-chloropentane, cyclo entylamine, isopropyl butyl ether, ethyl isobutyrate, peracetic acid, 3-methyl-2-butanol and 2- methyl- l-propanol have vapor pressures near enough to that of toluene to be useful according to the present invention.
  • Examples of single self-cleaning compounds useful as PAI sources according to the present invention include compounds having a C7 ion source portion with a composition of C7 or C7Hx, selected from benzyl chloride (C6H5CH2CI), benzyl acetate (C 9 Hio0 2 ), benzyl ethyl ether (C 9 Hi 2 0), benzyl formate (C 6 H 5 CH 2 OOCH), or benzyl mercaptan (C 6 HsCH 2 SH). These compounds may also be useful as carbon sources for other carbon implantation purposes.
  • benzyl chloride C6H5CH2CI
  • benzyl acetate C 9 Hio0 2
  • benzyl ethyl ether C 9 Hi 2 0
  • benzyl formate C 6 H 5 CH 2 OOCH
  • benzyl mercaptan C 6 HsCH 2 SH
  • the compounds according to the present invention may be packaged for use in several different ways.
  • the Genii technology from the Linde Group provides the compounds as standard sub-atmospheric pressure ion implantation sources in a cylinder with a membrane separator and with temperature control on the cylinder wall and delivery line up to 100°C.
  • an inert carrier gas may be used, wherein the inert gas flows through the source liquid in a bubbler configuration at room temperature.
  • the source compound may be delivered by direct liquid injection with a bubbler and liquid mass flow controller at room temperature.
  • the compounds of the present invention will require heating between 50°C and 100°C if the pure vapor phase of liquid is delivered.
  • the present invention provides many advantages.
  • the compounds of the present invention are self-cleaning C7 implantation sources that provide high C7H7 ion beam intensity as well as self-cleaning radicals with high concentration.
  • component separation is not necessary making processing simpler and less expensive.
  • the single molecule liquid compounds of the present invention exhibit a single vapor pressure curve, reducing operation parameters and simplifying processing.
  • the compounds of the present invention provide self- cleaning properties and therefore, longer ion chamber life can be achieved and the need for shutdown for cleaning can be reduced or eliminated. Consequently, manufacturing and operation costs are reduced.
  • the compounds of the present invention may be useful for implantation of semiconductor devices, for implantation of structural engineered materials, or for implantation of photovoltaic materials.
  • the variations of the present invention also include other carbon-based molecules other than C7.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne des procédés et des composés à utiliser comme matériaux sources pour une implantation de pré-amorphisation dans la formation de jonctions ultrasuperficielles. Certains composés présentent des propriétés de sources d'ions autonettoyants Cn (n = 5 - 30), chaque molécule du composé comprenant une partie de source d'ions Cn (n = 5 - 30) et une partie d'agent de nettoyage. D'autres composés comprennent des solutions binaires qui présentent des propriétés de sources autonettoyantes Cn (n = 5 - 30), la solution contenant une composante source d'ions Cn (n = 5 - 30) et une composante agent de nettoyage.
PCT/US2012/030228 2011-03-24 2012-03-23 Solutions autonettoyantes pour implantation de carbone WO2012129459A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161467042P 2011-03-24 2011-03-24
US201161467038P 2011-03-24 2011-03-24
US61/467,042 2011-03-24
US61/467,038 2011-03-24

Publications (1)

Publication Number Publication Date
WO2012129459A1 true WO2012129459A1 (fr) 2012-09-27

Family

ID=46879752

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/030228 WO2012129459A1 (fr) 2011-03-24 2012-03-23 Solutions autonettoyantes pour implantation de carbone

Country Status (2)

Country Link
TW (1) TW201245112A (fr)
WO (1) WO2012129459A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020070672A1 (en) * 1999-12-13 2002-06-13 Horsky Thomas N. Electron beam ion source with integral low-temperature vaporizer
US20050233529A1 (en) * 2001-02-12 2005-10-20 Pomarede Christophe F Integration of high k gate dielectric
US20090081874A1 (en) * 2007-09-21 2009-03-26 Cook Kevin S Method for extending equipment uptime in ion implantation
US20090206281A1 (en) * 2006-06-12 2009-08-20 Dror Oved Vapor delivery system useful with ion sources and vaporizers for use in such system
US20090252887A1 (en) * 2008-04-02 2009-10-08 Raytheon Company System and method for growing nanotubes with a specified isotope composition via ion implantation using a catalytic transmembrane

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020070672A1 (en) * 1999-12-13 2002-06-13 Horsky Thomas N. Electron beam ion source with integral low-temperature vaporizer
US20050233529A1 (en) * 2001-02-12 2005-10-20 Pomarede Christophe F Integration of high k gate dielectric
US20090206281A1 (en) * 2006-06-12 2009-08-20 Dror Oved Vapor delivery system useful with ion sources and vaporizers for use in such system
US20090081874A1 (en) * 2007-09-21 2009-03-26 Cook Kevin S Method for extending equipment uptime in ion implantation
US20090252887A1 (en) * 2008-04-02 2009-10-08 Raytheon Company System and method for growing nanotubes with a specified isotope composition via ion implantation using a catalytic transmembrane

Also Published As

Publication number Publication date
TW201245112A (en) 2012-11-16

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