WO2012129431A1 - Couches de liaison pour des substrats céramiques ou en composite à matrice céramique - Google Patents
Couches de liaison pour des substrats céramiques ou en composite à matrice céramique Download PDFInfo
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- WO2012129431A1 WO2012129431A1 PCT/US2012/030174 US2012030174W WO2012129431A1 WO 2012129431 A1 WO2012129431 A1 WO 2012129431A1 US 2012030174 W US2012030174 W US 2012030174W WO 2012129431 A1 WO2012129431 A1 WO 2012129431A1
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- WIPO (PCT)
- Prior art keywords
- bond layer
- metal oxide
- layer
- substrate
- oxide
- Prior art date
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Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01D—NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAM TURBINES
- F01D25/00—Component parts, details, or accessories, not provided for in, or of interest apart from, other groups
- F01D25/005—Selecting particular materials
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
Definitions
- the disclosure relates to bond layers for ceramic or ceramic matrix composite substrates.
- Components of high-temperature mechanical systems must operate in severe environments.
- the high-pressure turbine blades and vanes exposed to hot gases in commercial aeronautical engines typically experience metal surface temperatures of about 1000°C, with short-term peaks as high as 1100 °C.
- Typical components of high- temperature mechanical systems include a Ni or Co-based superalloy substrate.
- Some components of high- temperature mechanical systems include a ceramic or ceramic matrix composite (CMC)-based substrate, which may allow an increased operating temperature compared to a component with a superalloy substrate.
- the CMC-based substrate can be coated with an environmental barrier coating (EBC) to reduce exposure of a surface of the substrate to environmental species, such as water vapor or oxygen.
- EBC also may provide some thermal insulation to the CMC-based substrate.
- the EBC may include a ceramic topcoat, and may be bonded to the substrate by a bond layer.
- the disclosure is directed to a bond layer for a ceramic or CMC- based substrate and articles including a substrate and a bond layer.
- the bond layer may be capable of use at temperatures above the upper use temperature of a silicon (Si) bond layer, which may be about 1350°C.
- Si silicon
- a bond layer formed in accordance with aspects of this disclosure may facilitate use of an article including such a bond layer at higher temperatures than an article that includes a Si bond layer.
- the bond layer may include a substantially homogenous mixture of Si and at least one of silica (Si0 2 ), alumina (AI 2 O 3 ), zirconia (Zr0 2 ), a rare earth oxide (RE 2 O 3 , where RE is a rare earth element: La, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, or Sc), zirconium silicate (ZrSi0 4 ), titanium oxide (Ti0 2 ), tantalum oxide (Ta 2 0 5 ), boron oxide (B 2 0 3 ), an alkali metal oxide (Li 2 0, Na 2 0, K 2 0, Rb 2 0, Cs 2 0, or Fr 2 0), or an alkali earth metal oxide (BeO, MgO, CaO, SrO, BaO, or RaO).
- Si0 2 silica
- alumina AI 2 O 3
- Zr0 2 zirconia
- the bond layer may include Si, an alkali metal oxide, and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , hafnia (Hf0 2 ), a rare earth oxide, ZrSi0 4 , hafnium silicate (HfSi0 4 ), Ti0 2 , Ta 2 0 5 , B 2 0 3 , or an alkali earth metal oxide.
- the bond layer may include B 2 0 3 .
- the disclosure is directed to an article that includes a substrate comprising a ceramic, a CMC, or a metal alloy including Si, and a bond layer formed on the substrate.
- the bond layer includes a substantially homogeneous mixture of Si and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , a rare earth oxide, ZrSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , an alkali metal oxide, or an alkali earth metal oxide.
- the article also may include at least one of a thermal barrier coating (TBC), an environmental barrier coating (EBC), or a calcia- magnesia-alumina-silicate (CMAS)-resistant layer formed on the bond layer, wherein the bond layer is configured to increase adhesion between the substrate and the at least one of the TBC, the EBC, or the CMAS-resistant layer.
- TBC thermal barrier coating
- EBC environmental barrier coating
- CMAS calcia- magnesia-alumina-silicate
- the disclosure is directed to an article that includes a substrate comprising a ceramic, a CMC, or a metal alloy including Si, and a bond layer formed on the substrate.
- the bond layer includes Si; an alkali metal oxide; and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , a rare earth oxide, ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , or an alkali earth metal oxide.
- the article also may include at least one of a TBC, an EBC, or a CMAS-resistant layer formed on the bond layer, wherein the bond layer is configured to increase adhesion between the substrate and the at least one of the TBC, the EBC, or the CMAS-resistant layer.
- the disclosure is directed to an article that includes a substrate comprising a ceramic, a CMC, or a metal alloy including Si, and a bond layer formed on the substrate.
- the bond layer includes B 2 0 3 .
- the article also may include at least one of a TBC, an EBC, or a CM AS -resistant layer formed on the bond layer, wherein the bond layer is configured to increase adhesion between the substrate and the at least one of the TBC, the EBC, or the CM AS -resistant layer.
- the disclosure is directed to a method that includes forming a bond layer on a substrate comprising a ceramic, a CMC, or a metal alloy including Si.
- the bond layer includes a substantially homogeneous mixture of Si and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , a rare earth oxide, ZrSi0 4 , Ti0 2 , Ta 2 Os, B 2 0 3 , an alkali metal oxide, or an alkali earth metal oxide.
- the disclosure is directed to a method that includes forming a bond layer on a substrate comprising a ceramic, a CMC or a metal alloy including Si.
- the bond layer includes Si; an alkali metal oxide; and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , a rare earth oxide, ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , or an alkali earth metal oxide.
- the disclosure is directed to a method that includes forming a bond layer on a substrate comprising a ceramic, a CMC, or a metal alloy including Si.
- the bond layer includes B 2 0 3 .
- FIG. 1 is a conceptual cross-sectional diagram that illustrates an example of an article that includes a bond layer formed on a substrate and an EBC formed on the bond layer.
- FIG. 2 is a conceptual cross-sectional diagram that illustrates an example of an article that includes a bond layer formed on a substrate and a TBC formed on the bond layer.
- FIG. 3 is a conceptual cross-sectional diagram that illustrates an example of an article that includes a bond layer formed on a substrate and a calcia-magnesia- alumina-silicate (CMAS)-resistant layer formed on the bond layer.
- CMAS calcia-magnesia- alumina-silicate
- FIG. 4 is a conceptual cross-sectional diagram that illustrates an example of an article that includes a bond layer formed on a substrate, an EBC formed on the bond layer, a TBC formed on the EBC, and a CMAS-resistant layer formed on the
- FIG. 5 is a cross-sectional micrograph of an example article that includes a bond layer formed in accordance with the aspects of the disclosure.
- FIG. 6 is a cross-sectional micrograph of an example article 50 that includes a bond layer formed in accordance with the aspects of the disclosure.
- the disclosure is directed to a bond layer for a ceramic or CMC- based substrate and articles including a substrate and a bond layer.
- the bond layer may be capable of use at temperatures above the upper use temperature of a Si bond layer.
- the melting point of pure Si is about 1410°C, the melting temperature may decrease as Si is contaminated by impurities.
- impurities may enter the Si bond layer during formation or use of the article. Because of the lower melting temperature, an upper use temperature of an article that includes a Si bond layer may be limited to about 1350°C in some examples.
- the ceramic or CMC substrate may be able to withstand use temperatures of greater than 1350°C or even greater than 1410°C.
- some advanced CMCs such as those in which silicon is not included in the matrix material, may be able to withstand use temperatures of up to about 1482°C (about 2700°F).
- the bond layer may limit the upper use temperature to below a temperature which the substrate is capable of withstanding.
- the bond layer compositions of the present disclosure may be able to withstand temperatures greater than about 1350°C or greater than about 1410°C.
- the bond layer compositions of the present disclosure may thus facilitate use of an article including the bond layer compositions at temperatures greater than about 1350°C or greater than about 1410°C.
- the bond layer compositions of the present disclosure may also provide adherence between the substrate, the bond layer, and a layer formed on the bond layer.
- FIG. 1 is a conceptual cross-sectional diagram that illustrates an example of an article 10 that includes a bond layer 14 formed on a substrate 12 and an EBC 16 formed on bond layer 14.
- Article 10 is a component of a high temperature mechanical system, such as, for example, a gas turbine engine or the like.
- article 10 may be a turbine blade, a turbine vane, a turbine blade track, or a combustor liner.
- Substrate 12 may include a metal alloy that includes silicon, a ceramic, or a CMC.
- the ceramic may be substantially homogeneous.
- a substrate 12 that includes a ceramic includes, for example, a Si-containing ceramic, such Si0 2 , silicon carbide (SiC) or silicon nitride (Si 3 N 4 ); A1 2 0 3 ; aluminosilicate (e.g., Al 2 Si0 5 ); or the like.
- substrate 12 includes a metal alloy that includes Si, such as a molybdenum-silicon alloy (e.g., MoSi 2 ) or a niobium-silicon alloy (e.g., NbSi 2 ).
- a metal alloy that includes Si such as a molybdenum-silicon alloy (e.g., MoSi 2 ) or a niobium-silicon alloy (e.g., NbSi 2 ).
- substrate 12 includes a matrix material and a reinforcement material.
- the matrix material includes a ceramic material, such as, for example, SiC, Si 3 N 4 , A1 2 0 3 , aluminosilicate, Si0 2 , or the like.
- the CMC further includes a continuous or discontinuous reinforcement material.
- the reinforcement material may include discontinuous whiskers, platelets, or particulates.
- the reinforcement material may include a continuous monofilament or multifilament weave.
- the composition, shape, size, and the like of the reinforcement material may be selected to provide the desired properties to the substrate 12 including the CMC.
- the reinforcement material is chosen to increase the toughness of a brittle matrix material.
- the reinforcement material may
- a substrate 12 including a CMC additionally or alternatively be chosen to modify a thermal conductivity, electrical conductivity, thermal expansion coefficient, hardness, or the like of a substrate 12 including a CMC.
- the composition of the reinforcement material is the same as the composition of the matrix material.
- a matrix material comprising SiC may surround a reinforcement material comprising SiC whiskers.
- the reinforcement material includes a different composition than the composition of the matrix material, such as aluminosilicate fibers in an ⁇ 1 2 0 3 matrix, or the like.
- One composition of a substrate 12 that comprises a CMC includes a reinforcement material comprising SiC continuous fibers embedded in a matrix material comprising SiC.
- CMCs used for substrate 12 include composites of SiC or S1 3 N 4 and silicon oxynitride (S1 2 N 2 O) or silicon aluminum oxynitride, and oxide- oxide ceramics, such as a matrix material of AI 2 O 3 or aluminosilicate and a reinforcement material comprising NEXTELTM Ceramic Oxide Fiber 720
- Bond layer 14 is formed directly on substrate 12, and includes a composition that provides adherence between substrate 12 and a layer formed on bond layer 14, such as EBC 16. In some examples, the adherence provided by bond layer 14 between substrate 12 and EBC 16 may be greater than the adherence between substrate 12 and EBC 16, without bond layer 14.
- bond layer 14 may include a composition that may be stable at temperatures above 1350°C and/or above about 1410°C. In this way, bond layer 14 may allow use of article 10 at temperatures which lead to temperatures of bond layer 14 above 1350°C and/or above about 1410°C.
- article 10 may be used in a environment in which ambient temperature is greater than the temperature at which bond layer 14 is stable, e.g., because bond layer 14 may be coated with at least one layer, such as EBC 16 and/or TBC 22 (FIG. 2), that provides thermal insulation to bond layer 14 and reduces the temperature experienced by bond layer 14 compared to the ambient temperature or the surface temperature of the layer(s) formed on bond layer 14, e.g., EBC 16.
- bond layer 14 may include or consist essentially of a substantially homogeneous mixture of Si and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , a rare earth oxide, ZrSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , an alkali metal oxide, or an alkali earth metal oxide.
- substantially homogenous mixture includes a mixture that consists of substantially a single phase, i.e., discrete phases of distinct composition are substantially not present in the mixture or in a layer formed by the mixture.
- a layer including a substantially homogenous mixture may include a second phase that is present in an amount of less than 1 volume percent (vol. %).
- “consist essentially of means that the composition includes the listed components, may include additional components that do not materially affect the basic properties of the composition, and may not include additional components that materially affect the basic properties of the composition.
- the presence of Si in bond layer 14 may promote adherence between bond layer 14 and substrate 12, such as, for example, when substrate 12 includes Si or a compound containing Si.
- the addition of an oxide or silicate to bond layer 14 may contribute to bond layer 14 being stable at temperatures above 1350°C and/or about 1410°C.
- bond layer 14 may include or consist essentially of up to 99 weight percent (wt. %) Si and a balance of the at least one of Si0 2 , A1 2 0 3 , Zr0 2 , a rare earth oxide, ZrSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , an alkali metal oxide, or an alkali earth metal oxide, with a total of 100 wt. %.
- bond layer 14 may include or consist essentially of up to about 50 wt.
- Si % Si and a balance of the at least one of Si0 2 , A1 2 0 3 , Zr0 2 , a rare earth oxide, ZrSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , an alkali metal oxide, or an alkali earth metal oxide, with a total of 100 wt. %.
- bond layer 14 may include or consist essentially of a substantially homogenous mixture of silicon, at least one of Si0 2 , A1 2 0 3 , Zr0 2 , or a rare earth oxide, and at least one of ZrSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , an alkali metal oxide, or an alkali earth metal oxide.
- bond layer 14 may include or consist essentially of up to about 99 wt. % Si, up to about 99 wt. % of the at least one of Si0 2 , A1 2 0 3 , Zr0 2 , or a rare earth oxide, and up to about 50 wt.
- bond layer 14 may include or consist essentially of up to about 50 wt. % Si, up to about 99 wt. % of the at least one of Si0 2 , A1 2 0 3 , Zr0 2 , or a rare earth oxide, and up to about 20 wt. % of the at least one of ZrSi0 4 , Ti0 2 , Ta 2 Os, B 2 0 3 , an alkali metal oxide, or an alkali earth metal oxide, with a total of 100 wt. %.
- bond layer 14 may include or consist essentially of Si, an alkali metal oxide, and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , a rare earth oxide, ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 Os, B 2 0 3 , or an alkali earth metal oxide.
- bond layer 14 may include or consist essentially of a substantially homogeneous mixture.
- bond layer 14 may include two or more discrete phases, e.g., a Si phase and an oxide phase.
- bond layer 14 includes or consists essentially of Si, an alkali metal oxide, and at least one of Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , a rare earth oxide, ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 Os, B 2 0 3 , or an alkali earth metal oxide
- bond layer 14 may include or consist essentially of up to about 99 wt. % Si, up to about 50 wt. % of the alkali metal oxide, and up to about 99 wt.
- bond layer 14 may include or consist essentially of up to about 50 wt. % Si, up to about 20 wt. % of the alkali metal oxide, and up to about 99 wt.
- bond layer 14 may include or consist essentially of Si, an alkali metal oxide, at least one of Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , or a rare earth oxide, and at least one of ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , or an alkali earth metal oxide.
- bond layer 14 may include or consist essentially of up to about 99 wt. % Si, up to about 50 wt. % of the alkali metal oxide, and up to about 99 wt.
- bond layer 14 may include or consist essentially of up to about 50 wt. % Si, up to about 20 wt. % of the alkali metal oxide, and up to about 99 wt. % of the at least one of Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , or a rare earth oxide, and up to about 20 wt. % of the at least one of ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 0 5 , B 2 0 3 , or an alkali earth metal oxide, with a total of 100 wt. %.
- bond layer 14 may include or consist essentially of B 2 0 3 .
- bond layer 14 may include or consist essentially of at least one of Si, Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , a rare earth oxide, ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 0 5 , an alkali metal oxide, or an alkali earth metal oxide.
- bond layer 14 may include or consist essentially of up to about 50 wt.
- bond layer 14 may include or consist essentially of up to about 20 wt.
- bond layer 14 may include or consist essentially of B 2 0 3 , Si, at least one of Si0 2 , A1 2 0 3 , Zr0 2 , Hf0 2 , or a rare earth oxide, and at least one of ZrSi0 4 , HfSi0 4 , Ti0 2 , Ta 2 Os, an alkali metal oxide, or an alkali earth metal oxide.
- bond layer 14 may include or consist essentially of up to about 50 wt. % B 2 0 3 , up to about 99 wt. % Si, up to about 99 wt.
- bond layer 14 may include or consist essentially of up to about 20 wt. % B 2 0 3 , up to about 50 wt. % Si, up to about 99 wt.
- bond layer 14 may have a thickness of less than about 200 micrometers ( ⁇ ; about 0.007874 inch).
- bond layer 14 may include a thickness of up to about 50 ⁇ (about 0.001969 inch), up to about 25 ⁇ (about 0.0009843 inch), or between about 1 ⁇ (about 0.00003937 inch) and about 25 ⁇ (about 0.0009843 inch). In some examples, a bond layer 14 may be thinner when bond layer 14 includes a greater amount of Si and thicker when bond layer 14 includes a lesser amount of Si.
- Bond layer 14 may be formed on substrate 12 using, for example, plasma spraying, physical vapor deposition (PVD), electron beam physical vapor deposition (EB-PVD), directed vapor deposition (DVD), chemical vapor deposition (CVD), cathodic arc deposition slurry process deposition, sol-gel process deposition, or electrophoretic deposition.
- PVD physical vapor deposition
- EB-PVD electron beam physical vapor deposition
- DVD directed vapor deposition
- CVD chemical vapor deposition
- cathodic arc deposition slurry process deposition sol-gel process deposition
- sol-gel process deposition sol-gel process deposition
- electrophoretic deposition electrophoretic deposition
- bond layer 14 includes at least two components (e.g., Si and at least one other component)
- the at least two components may be co- deposited.
- at least one of the at least two components may be deposited in a separate layer from at least one other of the at least two components.
- Si may be deposited in a separate layer from the oxide.
- Si and oxide may be deposited on substrate 12 in the following orders: Si/O; O/Si; Si/O/Si/O; O/Si/O/Si.
- the deposition process is not limited to two or fewer Si layers and/or two or fewer oxide layers, and as many alternating layers of Si and oxide may be deposited as desired.
- bond layer 14 includes at least two oxides (and/or ZrSi0 4 )
- at least one of the at least two oxides may be deposited in a separate layer from at least one other of the at least two oxides.
- at least one of the at least two oxides may be co-deposited with Si, while at least one other oxide may be deposited in a separate layer.
- Si, at least one of the at least two oxides, and at least another of the at least two oxides may be deposited in three or more separate layers.
- the components of bond layer 14 may be deposited in any combination of separately deposited layers and/or co-deposited layers.
- bond layer 14 may include or consist essentially of a substantially homogenous mixture.
- bond layer 14 is deposited as a substantially homogeneous layer, e.g., when bond layer 14 includes at least two components, the at least two components may be co- deposited as a substantially homogenous layer.
- bond layer 14 may undergo a post-deposition heat treatment to form the substantially homogenous layer.
- bond layer 14 may be exposed to a post-deposition heat treatment at a temperature up to the temperature capability of substrate 12, which may be, for example, up to about 1500°C for some substrates 12 that include a CMC.
- the post-deposition heat treatment temperature may be between about 1350°C and about the temperature capability of substrate 12 (e.g., about 1500°C).
- Bond layer 14 may be exposed to the heat treatment for up to about 10 hours, such as between about 10 minutes and about 1 hour.
- the heat treatment may be performed in an oxidizing atmosphere, such as air; a reducing atmosphere, such as hydrogen; or an inert atmosphere, such as argon, helium, or nitrogen.
- bond layer 14 may undergo the heat treatment after deposition of bond layer 14 on substrate 12 and before deposition of an overlay er such as EBC 16. In other examples, bond layer 14 may undergo the heat treatment after deposition of bond layer 14 on substrate 12 and after deposition of an overlay er such as EBC 16.
- post-deposition heat treatment may in some implementations be used to create a substantially homogenous mixture in bond layer 14
- post- deposition heat treatment may also cause chemical reactions among components of bond layer 14 and/or between components of bond layer 14 and components of substrate 12 and/or between components of bond layer 14 and components of an overlay er, such as EBC 16. This may contribute to adherence between substrate 12 and bond layer 14 and/or between bond layer 14 and an overlay er, such as EBC 16.
- bond layer 14 may or may not undergo heat treatment in examples in which bond layer 14 does not include a substantially homogenous mixture and/or in examples in which bond layer 14 is deposited as a substantially homogenous mixture.
- layer 14 may or may not be exposed to a post-deposition heat treatment.
- EBC 16 is formed on bond layer 14.
- EBC 16 may reduce or substantially prevent attack of bond layer 14 and/or substrate 12 by chemical species present in the environment in which article 10 is utilized, e.g., in the intake gas or exhaust gas of a gas turbine engine.
- EBC 16 may include a material that is resistant to oxidation or water vapor attack.
- Exemplary materials for use in EBC 16 include mullite; glass ceramics such as barium strontium aluminosilicate (BaO- SrO-Al 2 03-2Si02; BSAS), calcium aluminosilicate (CaAl 2 Si 2 08; CAS), cordierite (magnesium aluminosilicate), and lithium aluminosilicate; and rare earth silicates (silicates of Lu, Yb, Tm, Er, Ho, Dy, Tb, Gd, Eu, Sm, Pm, Nd, Pr, Ce, La, Y, or Sc).
- barium strontium aluminosilicate BaO- SrO-Al 2 03-2Si02
- BSAS barium strontium aluminosilicate
- CaAl 2 Si 2 08 calcium aluminosilicate
- cordierite magnesium aluminosilicate
- lithium aluminosilicate and rare earth silicates (silicates of Lu
- the rare earth silicate may be a rare earth mono-silicate (RE 2 Si0 5 , where RE stands for “rare earth”) or a rare earth di-silicate (RE 2 S1 2 O 7 , where RE stands for "rare earth”).
- EBC 16 is formed as a substantially non-porous layer, while in other examples, EBC 16 is formed as a layer that includes a plurality of cracks. EBC 16 may be formed using, for example, CVD; PVD, including EB-PVD and DVD; plasma spraying or another thermal spraying process, or the like. In some examples, EBC 16 may comprise a thickness between about 0.001 inch and about 0.1 inch.
- EBC 16 may be formed on bond layer 14 prior to exposing bond layer 14 to a heat treatment or after exposing bond layer 14 to a heat treatment, as described above. In some examples, EBC 16 may comprise a thickness between about 0.003 inch (about 76.2 ⁇ ) and about 0.05 inch (about 1270 ⁇ ).
- an article may include a layer other than EBC 16 formed on bond layer 14.
- FIG. 2 is a conceptual cross-sectional diagram that illustrates an example of an article 20 that includes bond layer 14 formed on substrate 12 and a TBC 22 formed on bond layer 14.
- TBC 22 includes a thermally insulative material.
- Common TBCs include ceramic layers comprising Zr0 2 or Hf0 2 .
- a TBC 22 that includes Zr0 2 or Hf0 2 optionally may include one or more other elements or compounds to modify a desired characteristic of the TBC 22, such as, for example, phase stability, thermal conductivity, or the like.
- Exemplary additive elements or compounds include rare earth oxides (oxides of Lu, Yb, Tm, Er, Ho, Dy, Tb, Gd, Eu, Sm, Pm, Nd, Pr, Ce, La, Y, or Sc).
- rare earth oxides oxides of Lu, Yb, Tm, Er, Ho, Dy, Tb, Gd, Eu, Sm, Pm, Nd, Pr, Ce, La, Y, or Sc.
- Particular examples of materials from which TBC 22 may be formed include Zr0 2 stabilized with between 7 weight percent (wt. %) and 8 wt.
- Zr0 2 stabilized with Yb 2 0 3 , Sm 2 0 3 , and at least one of Lu 2 0 3 , Sc 2 0 3 , Ce 2 0 3 , Gd 2 0 3 , Nd 2 0 3 , or Eu 2 0 3 ; or Hf0 2 stabilized with Yb 2 0 3 , Sm 2 0 3 , and at least one of Lu 2 0 3 , Sc 2 0 3 , Ce 2 0 3 , Gd 2 0 3 , Nd 2 0 3 , or Eu 2 0 3 .
- TBC 22 may include Zr0 2 and/or Hf0 2 in combination with additive elements or compounds such that at least some of the stabilized Zr0 2 and/or Hf0 2 forms a metastable tetragonal-prime crystalline phase, a cubic crystalline phase, or a compound phase (RE 2 Zr 2 0 7 or RE 2 Hf 2 0 7 , where RE is a rare earth element).
- TBC 22 includes Zr0 2 and/or Hf0 2 , a primary dopant, a first co-dopant, and a second co-dopant.
- the primary dopant is preferably present in a greater amount than either the first or second co-dopants, and may be present in an amount less than, equal to, or greater than the total amount of the first and second co-dopants.
- the primary dopant includes Yb 2 0 3
- the first co-dopant includes Sm 2 0 3
- the second co-dopant includes at least one of Lu 2 0 3 , Sc 2 0 3 , Ce 2 0 3 , Gd 2 0 3 , Nd 2 0 3 , or Eu 2 0 3 .
- TBC 22 includes between about 2 mol. % and about 40 mol. % of the primary dopant. In other examples, TBC 22 includes between approximately 2 mol. % and approximately 20 mol. % of the primary dopant or between approximately 2 mol. % and approximately 10 mol. % of the primary dopant.
- TBC 22 includes between about 0.1 mol. % and about 20 mol. % of the first co-dopant. In other examples, TBC 22 includes between about 0.5 mol. % and about 10 mol. % of the first co-dopant or between about 0.5 mol. % and about 5 mol. % of the first co-dopant.
- TBC 22 includes between about 0.1 mol. % and about 20 mol. % of the second co-dopant. In other examples, TBC 22 includes between about 0.5 mol. % and about 10 mol. % of the second co-dopant or between about 0.5 mol. % and about 5 mol. % of the second co-dopant. [0052] In some examples, the composition of TBC 22 provides a desired phase constitution.
- a primary dopant, a first co-dopant, and a second co-dopant, accessible phase constitutions include metastable tetragonal-prime, cubic, and compound (RE 2 Zr 2 0 7 and RE 2 Hf 2 0 7 , where RE is a rare earth element).
- TBC 22 includes between about 20 mol. % and about 40 mol. % primary dopant, between about 10 mol. % and about 20 mol. % first co-dopant, between about 10 mol. % and about 20 mol.
- TBC 22 includes between about 5 mol. % and about 20 mol. % primary dopant, between about 2 mol. % and about 10 mol. % first co-dopant, between about 2 mol. % and about 10 mol. % second co-dopant, and a balance base oxide (Zr0 2 and/or Hf0 2 ) and any impurities present.
- TBC 22 includes between about 2 mol. % and about 5 mol.
- % primary dopant between about 0.5 mol. % and about 3 mol. % first co-dopant, between about 0.5 mol. % and about 3 mol. % second co-dopant, and a balance base oxide and any impurities present.
- TBC 22 may be formed on bond layer 14 as a porous layer or a columnar layer, and may be formed using, for example, CVD; PVD, including EB-PVD and DVD; plasma spraying or another thermal spraying process, or the like.
- an article may include a layer other than EBC 16 or TBC 22 formed on bond layer 14.
- FIG. 3 is a conceptual cross-sectional diagram that illustrates an example of an article 30 that includes bond layer 14 formed on substrate 12 and a CMAS -resistant layer 32 formed on bond layer 14.
- CMAS- resistant layer 32 includes an element or compound that reacts with CMAS to form a solid or a highly-viscous reaction product (i.e., a reaction product that is a solid or highly viscous at the temperatures experienced by article 30).
- CMAS-resistant layer 32 includes A1 2 0 3 and at least one rare earth oxide, such as, for example, an oxide of at least one of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and combinations thereof.
- the combination of A1 2 0 3 and at least one rare earth oxide may allow tailoring of one or more properties of CMAS-resistant layer 32, such as, for example, the chemical reactivity of CMAS-resistant layer 32 with CMAS, the viscosity of the reaction products, the coefficient of thermal expansion (CTE) of CMAS-resistant layer 32, the chemical compatibility of CMAS-resistant layer 32 with bond layer 14, or the like.
- CMAS-resistant layer 32 is essentially free of Zr0 2 and/or Hf0 2 . That is, in these examples, CMAS-resistant layer 32 includes at most trace amounts of Zr0 2 and/or Hf0 2 , such as, for example, the amounts present in commercially-available rare earth oxides.
- CMAS-resistant layer 32 includes Si0 2 in addition to the A1 2 0 3 and at least one rare earth oxide.
- Si0 2 can be added to CMAS-resistant layer 32 to allow further manipulation of the properties of CMAS-resistant layer 32, such as, for example, the chemical reactivity, viscosity of the reaction products, the CTE, the chemical compatibility of CMAS-resistant layer 32 with bond layer 14, or the like.
- CMAS-resistant layer 32 optionally includes other additive components, such as, for example, Ti0 2 , Ta 2 0 5 , HfSi0 4 , alkali metal oxides, alkali earth metal oxides, or mixtures thereof.
- the additive components may be added to CMAS-resistant layer 32 to modify one or more desired properties of CMAS-resistant layer 32.
- the additive components may increase or decrease the reaction rate of CMAS-resistant layer 32 with CMAS, may modify the viscosity of the reaction product from the reaction of CMAS and CMAS-resistant layer 32, may increase adhesion of the CMAS-resistant layer 32 to bond layer 14, may increase or decrease the chemical stability of CMAS-resistant layer 32, or the like.
- CMAS-resistant layer 32 may include up to about 99 mol. % of the at least one rare earth oxide, ⁇ 1 mol. %, and up to about 90 mol. % of A1 2 0 3 , with a total of 100 mol. %. In some examples, CMAS-resistant layer 32 may also include up to about 90 mol. % of Si0 2 . In some examples, CMAS-resistant layer 32 may additionally include up to about 50 mol. % of at least one of Ti0 2 , Ta 2 0 5 , HfSi0 4 , an alkali oxide, or an alkali earth oxide. [0059] In some examples, CMAS-resistant layer 32 includes between about 20 mol. % and about 80 mol.
- CMAS-resistant layer 32 may additionally include between about 0.1 mol. % and about 30 mol. % of at least one of Ti0 2 , Ta 2 0 5 , HfSi0 4 , an alkali oxide, or an alkali earth oxide.
- CMAS-resistant layer 32 reacts with CMAS that reaches layer 32 to form a solid or highly viscous reaction product.
- the reaction product may have a melting temperature significantly higher than CMAS (e.g., higher than about 1200-1250°C).
- a solid or highly viscous reaction product is desired because the CMAS-resistant layer 32 is consumed as it reacts with CMAS. If, for example, the reaction product of CMAS-resistant layer 32 and CMAS was a relatively low viscosity liquid, the low viscosity liquid would contact bond layer 14 and/or substrate 12 once the CMAS-resistant layer 32 is consumed by the reaction, which is the very occurrence the CMAS-resistant layer 32 is designed to prevent.
- reaction product is a solid or highly viscous
- a reaction layer will form on the surface of CMAS-resistant layer 32, which will lower the reaction rate of the CMAS with CMAS-resistant layer 32. That is, once a solid or highly viscous reaction layer forms on the surface of CMAS-resistant layer 32, the reaction between CMAS-resistant layer 32 and CMAS will slow, because any further reaction will require the diffusion of CMAS through the reaction layer to encounter the CMAS-resistant layer 32, or diffusion of a component of CMAS- resistant layer 32 through the reaction layer to encounter the CMAS.
- the diffusion of either CMAS or the component of CMAS-resistant layer 32 is expected to be the limiting step in the reaction once a solid or highly viscous reaction layer is formed on the surface of CMAS-resistant layer 32, because diffusion will be the slowest process.
- FIG. 4 is a conceptual cross-sectional diagram that illustrates an example of an article 40 that includes bond layer 14 formed on substrate 12, EBC 16 formed on bond layer 14, TBC 22 formed on EBC 16, and CMAS-resistant layer 32 formed on TBC 22.
- formed over means a layer or coating that is formed on top of another layer or coating, and encompasses both a first layer or coating formed immediately adjacent a second layer or coating and a first layer or coating formed on top of a second layer or coating with one or more intermediate layer or coating present between the first and second layers or coatings.
- formed directly on and “formed on” denote a layer or coating that is formed immediately adjacent another layer or coating, i.e., there are no intermediate layers or coatings.
- FIG. 4 illustrates an article 40 that includes EBC 16, TBC 22, and CMAS-resistant layer 32
- an article may include two of these layers.
- an article may include substrate 12, bond layer 14 formed on substrate 12, EBC 16 formed over bond layer 14, and TBC 22 formed over EBC 16.
- an article may include substrate 12, bond layer 14 formed on substrate 12, TBC 22 formed over bond layer 14, and CMAS-resistant layer 32 formed over TBC 22.
- CMAS-resistant layer 32 is formed over TBC 22, which is formed over EBC 16 in FIG. 4, other configurations of layers are possible.
- TBC 22 may be formed over CMAS-resistant layer 32 and/or EBC 16 may be formed over TBC 22.
- Other configurations and combinations of layers will be apparent to those of ordinary skill in the art, and fall within the scope of the disclosure and the following claims.
- FIG. 5 is a cross-sectional micrograph of an example article 50 that includes a bond layer formed in accordance with the aspects of the disclosure.
- Article 50 includes a substrate 52 that includes a SiC matrix reinforced with SiC fibers, a bond layer 54 that includes Si, Si0 2 , Yb 2 0 3 , and Zr0 2 , and an EBC 56 that includes Yb 2 Si 2 0 7 (ytterbium disilicate).
- the components of bond layer 54 were co-deposited in a single layer on substrate 52 using DVD, and EBC 56 was deposited using DVD on bond layer 54 prior to exposing bond layer 54 to heat treatment.
- Article 50 was then exposed to heat treatment in air at about 1410°C for about 1 hour prior to testing.
- FIG. 5 illustrates a portion of article 50 after completion of the thermal cycling testing.
- FIG. 5 illustrates that EBC 56 maintained good adherence to bond layer 54 and substrate 52 after the thermal cycling.
- FIG. 6 is a cross-sectional micrograph of an example article 60 that includes a bond layer formed in accordance with the aspects of the disclosure.
- Article 60 includes a substrate 62 that includes a SiC matrix reinforced with SiC fibers, a bond layer 64 that includes Si, Si0 2 , Yb 2 0 3 , and Zr0 2 , and an EBC 66 that includes Yb 2 Si 2 0 7 (ytterbium disilicate).
- the components of bond layer 64 were co-deposited in a single layer on substrate 62 using DVD, and EBC 66 was deposited using DVD on bond layer 64 prior to exposing bond layer 64 to heat treatment.
- Article 50 was then exposed to heat treatment in air at about 1430°C for about 1 hour prior to testing.
- FIG. 6 illustrates a portion article 60 after completion of the thermal cycling testing.
- FIG. 6 illustrates that EBC 66 maintained good adherence to bond layer 64 and substrate 62 after the thermal cycling.
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Abstract
L'invention concerne une couche de liaison pouvant inclure une composition qui peut être stable à des températures supérieures à environ 1410°C. Un objet peut inclure un substrat, une couche de liaison formée sur le substrat et une couche de recouvrement formée sur la couche de liaison. Dans quelques exemples, la couche de liaison peut inclure un mélange substantiellement homogène de Si et d'au moins un parmi SiO2, Al2O3, ZrO2, un oxyde de terre rare, ZrSiO4, TiO2, Ta2O5, B2O3, un oxyde de métal alcalin ou un oxyde de métal alcalino-terreux. Dans d'autres exemples, la couche de liaison peut inclure Si, un oxyde de métal alcalin et au moins un parmi SiO2, Al2O3, ZrO2, HfO2, un oxyde de terre rare, ZrSiO4, HfSiO4, TiO2, Ta2O5, B2O3 ou un oxyde de métal alcalino-terreux. Dans d'autres exemples, la couche de liaison peut inclure B2O3.
Priority Applications (2)
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US14/006,848 US20140072816A1 (en) | 2011-03-23 | 2012-03-22 | Bond layers for ceramic or ceramic matrix composite substrates |
EP12714117.4A EP2688858A1 (fr) | 2011-03-23 | 2012-03-22 | Couches de liaison pour des substrats céramiques ou en composite à matrice céramique |
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US201161466556P | 2011-03-23 | 2011-03-23 | |
US61/466,556 | 2011-03-23 |
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WO2012129431A1 true WO2012129431A1 (fr) | 2012-09-27 |
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PCT/US2012/030174 WO2012129431A1 (fr) | 2011-03-23 | 2012-03-22 | Couches de liaison pour des substrats céramiques ou en composite à matrice céramique |
Country Status (3)
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US (1) | US20140072816A1 (fr) |
EP (1) | EP2688858A1 (fr) |
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US20140072816A1 (en) | 2014-03-13 |
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