WO2012123109A3 - Method for producing flexible thin film solar cells - Google Patents
Method for producing flexible thin film solar cells Download PDFInfo
- Publication number
- WO2012123109A3 WO2012123109A3 PCT/EP2012/001129 EP2012001129W WO2012123109A3 WO 2012123109 A3 WO2012123109 A3 WO 2012123109A3 EP 2012001129 W EP2012001129 W EP 2012001129W WO 2012123109 A3 WO2012123109 A3 WO 2012123109A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- solar cells
- film solar
- flexible thin
- producing flexible
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000010276 construction Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for producing flexible thin film solar cells, comprising the following steps: e. applying a photoactive layer construction to a rigid substrate preferably made of glass and having the front contact layer thereof facing outward, f. applying a flexible film to the back contact layer of the layer construction facing away from the substrate, g. releasing the photoactive layer construction from the substrate by means of a laser beam, h. applying a flexible film to the front contact layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011014795.0A DE102011014795B4 (en) | 2011-03-15 | 2011-03-15 | Process for the production of flexible thin-film solar cells |
DE102011014795.0 | 2011-03-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012123109A2 WO2012123109A2 (en) | 2012-09-20 |
WO2012123109A3 true WO2012123109A3 (en) | 2013-06-20 |
Family
ID=45954588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2012/001129 WO2012123109A2 (en) | 2011-03-15 | 2012-03-14 | Method for producing flexible thin film solar cells |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102011014795B4 (en) |
WO (1) | WO2012123109A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014202985B4 (en) * | 2014-02-19 | 2018-07-12 | 4Jet Microtech Gmbh & Co. Kg | Production of electronic components on a substrate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0797258A2 (en) * | 1996-03-18 | 1997-09-24 | Sony Corporation | Method for making thin film semiconductor, solar cell, and light emitting diode |
US20030040164A1 (en) * | 1997-07-03 | 2003-02-27 | Seiko Epson Corporation | Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus |
US20060076584A1 (en) * | 2004-09-07 | 2006-04-13 | Il-Doo Kim | Fabrication of electronic and photonic systems on flexible substrates by layer transfer method |
US20100255344A1 (en) * | 2009-04-06 | 2010-10-07 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing thin film device and thin film device manufactured using the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10005680B4 (en) | 2000-02-07 | 2005-03-31 | Cis Solartechnik Gmbh | Support material for a flexible, band-shaped CIS solar cell |
DE10006823C2 (en) | 2000-02-08 | 2003-10-02 | Cis Solartechnik Gmbh | Process for producing a flexible metallic substrate for a CIS solar cell and CIS solar cell |
DE10127255A1 (en) * | 2001-06-05 | 2003-01-16 | Univ Stuttgart | Conditioning of glass surfaces for the transfer of CIGS solar cells to flexible plastic substrates |
DE10239845C1 (en) | 2002-08-29 | 2003-12-24 | Day4 Energy Inc | Electrode for photovoltaic cells, photovoltaic cell and photovoltaic module |
WO2007011742A2 (en) * | 2005-07-14 | 2007-01-25 | Konarka Technologies, Inc. | Cigs photovoltaic cells |
JP5352824B2 (en) * | 2007-07-20 | 2013-11-27 | 独立行政法人 宇宙航空研究開発機構 | Manufacturing method of solar cell |
-
2011
- 2011-03-15 DE DE102011014795.0A patent/DE102011014795B4/en not_active Expired - Fee Related
-
2012
- 2012-03-14 WO PCT/EP2012/001129 patent/WO2012123109A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0797258A2 (en) * | 1996-03-18 | 1997-09-24 | Sony Corporation | Method for making thin film semiconductor, solar cell, and light emitting diode |
US20030040164A1 (en) * | 1997-07-03 | 2003-02-27 | Seiko Epson Corporation | Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus |
US20060076584A1 (en) * | 2004-09-07 | 2006-04-13 | Il-Doo Kim | Fabrication of electronic and photonic systems on flexible substrates by layer transfer method |
US20100255344A1 (en) * | 2009-04-06 | 2010-10-07 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing thin film device and thin film device manufactured using the same |
Also Published As
Publication number | Publication date |
---|---|
DE102011014795B4 (en) | 2021-05-06 |
WO2012123109A2 (en) | 2012-09-20 |
DE102011014795A1 (en) | 2012-09-20 |
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