WO2012115348A3 - High-quality hexagonal boron-nitride nanosheet using a multi-component low eutectic temperature system - Google Patents

High-quality hexagonal boron-nitride nanosheet using a multi-component low eutectic temperature system Download PDF

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Publication number
WO2012115348A3
WO2012115348A3 PCT/KR2012/000209 KR2012000209W WO2012115348A3 WO 2012115348 A3 WO2012115348 A3 WO 2012115348A3 KR 2012000209 W KR2012000209 W KR 2012000209W WO 2012115348 A3 WO2012115348 A3 WO 2012115348A3
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WO
WIPO (PCT)
Prior art keywords
hexagonal boron
metal ions
nitride
nitride nanosheet
alkaline earth
Prior art date
Application number
PCT/KR2012/000209
Other languages
French (fr)
Korean (ko)
Other versions
WO2012115348A2 (en
Inventor
전석우
홍순형
이동주
박광현
Original Assignee
한국과학기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국과학기술원 filed Critical 한국과학기술원
Priority to US13/976,339 priority Critical patent/US9150416B2/en
Publication of WO2012115348A2 publication Critical patent/WO2012115348A2/en
Publication of WO2012115348A3 publication Critical patent/WO2012115348A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C01B21/0648—After-treatment, e.g. grinding, purification
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/20—Particle morphology extending in two dimensions, e.g. plate-like
    • C01P2004/24—Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer

Abstract

The present invention relates to a method for preparing a hexagonal boron-nitride nanosheet, enablingwhich enables high-quality hexagonal boron nitride nanosheets to be mass-produced at a low temperature through a stable process. The method for preparing a hexagonal boron-nitride nanosheet comprises the steps of: (a) obtaining alkali metal ions or alkaline earth metal ions from a salt mixture including at least two kinds of alkali metal salts or alkaline earth metal salts; (b) inserting the alkali metal ions or alkaline earth metal ions into an interlayer region of hexagonal boron nitride to form a hexagonal boron-nitride interlayer compound; and (c) removing the alkali metal ions or alkaline earth metal ions from the hexagonal boron nitride interlayer compound so as to obtain a hexagonal boron-nitride nanosheet.
PCT/KR2012/000209 2011-02-23 2012-01-09 High-quality hexagonal boron-nitride nanosheet using a multi-component low eutectic temperature system WO2012115348A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/976,339 US9150416B2 (en) 2011-02-23 2012-01-09 Method of forming high-quality hexagonal boron nitride nanosheet using multi component eutectic point system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0016037 2011-02-23
KR1020110016037A KR101212717B1 (en) 2011-02-23 2011-02-23 Method of forming high-quality hexagonal boron nitride nanosheet using multi component eutectic point system

Publications (2)

Publication Number Publication Date
WO2012115348A2 WO2012115348A2 (en) 2012-08-30
WO2012115348A3 true WO2012115348A3 (en) 2012-10-18

Family

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Family Applications (1)

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PCT/KR2012/000209 WO2012115348A2 (en) 2011-02-23 2012-01-09 High-quality hexagonal boron-nitride nanosheet using a multi-component low eutectic temperature system

Country Status (3)

Country Link
US (1) US9150416B2 (en)
KR (1) KR101212717B1 (en)
WO (1) WO2012115348A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102976295B (en) * 2012-12-27 2014-07-23 山东大学 Method for preparing two-dimensional hexagonal boron nitride nanosheet through molten caustic soda
US10005668B1 (en) * 2013-01-18 2018-06-26 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Methods for intercalating and exfoliating hexagonal boron nitride
US10236122B2 (en) 2013-11-27 2019-03-19 The Board Of Trustees Of Northern Illinois University Boron nitride and method of producing boron nitride
KR101605707B1 (en) * 2014-05-23 2016-03-23 한국과학기술원 Boron-Nitride Quantum Dots synthesis by thermal defect engineering
CN105253862B (en) * 2014-07-15 2019-03-12 中国科学院过程工程研究所 A kind of method of high-temperature liquid-phase removing large scale preparation class graphene boron nitride nanosheet
KR101685100B1 (en) 2015-03-27 2016-12-09 한국과학기술연구원 Formation method of hexagonal boron nitride thick film on a substrate and hexagonal boron nitride thick film laminates thereby
KR101746529B1 (en) 2015-08-21 2017-06-14 한국세라믹기술원 Method for preparing dispersion sol of boron nitride nanosheet by microwave heating and dispersion sol of boron nitride nanosheet prepared by the method
RU2613996C1 (en) * 2016-03-03 2017-03-22 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Method for producing coatings from boron nitride nanosheets
US20180107140A1 (en) 2016-10-13 2018-04-19 Xerox Corporation Fuser members
CN107572490A (en) * 2017-09-11 2018-01-12 河北工业大学 A kind of preparation method of controlledly synthesis boron nitride nanosheet
KR102191865B1 (en) * 2018-04-12 2020-12-17 한국과학기술원 Boron-nitride nanoplatelets/metal nanocomposite powder and method of manufacturing thereof
WO2023149999A1 (en) * 2022-02-04 2023-08-10 The Penn State Research Foundation Methods for preparing alkali metal-intercalated hexagonal boron nitride materials, resultant products and uses thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045186A (en) * 1973-09-06 1977-08-30 General Electric Company Method for producing large soft hexagonal boron nitride particles
US4562050A (en) * 1983-08-25 1985-12-31 Yukamelamin Company, Limited Process for producing boron nitride
US5028650A (en) * 1988-01-27 1991-07-02 W. R. Grace & Co.-Conn. Boron nitride sheets
US20020076557A1 (en) * 1996-08-06 2002-06-20 Faustinus Fauzi Process for producing boron nitride

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8303922B2 (en) * 2009-08-24 2012-11-06 The United States Of America As Represeted By The Administrator Of The National Aeronautics And Space Administration Method for exfoliation of hexagonal boron nitride

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045186A (en) * 1973-09-06 1977-08-30 General Electric Company Method for producing large soft hexagonal boron nitride particles
US4562050A (en) * 1983-08-25 1985-12-31 Yukamelamin Company, Limited Process for producing boron nitride
US5028650A (en) * 1988-01-27 1991-07-02 W. R. Grace & Co.-Conn. Boron nitride sheets
US20020076557A1 (en) * 1996-08-06 2002-06-20 Faustinus Fauzi Process for producing boron nitride

Also Published As

Publication number Publication date
US20130323150A1 (en) 2013-12-05
KR101212717B1 (en) 2012-12-14
US9150416B2 (en) 2015-10-06
KR20120096753A (en) 2012-08-31
WO2012115348A2 (en) 2012-08-30

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