WO2012106870A1 - Method for improving efficiency of dc-dc conversion circuit and control apparatus for dc-dc conversion circuit - Google Patents

Method for improving efficiency of dc-dc conversion circuit and control apparatus for dc-dc conversion circuit Download PDF

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Publication number
WO2012106870A1
WO2012106870A1 PCT/CN2011/076907 CN2011076907W WO2012106870A1 WO 2012106870 A1 WO2012106870 A1 WO 2012106870A1 CN 2011076907 W CN2011076907 W CN 2011076907W WO 2012106870 A1 WO2012106870 A1 WO 2012106870A1
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WO
WIPO (PCT)
Prior art keywords
conversion circuit
mosfet
current
field effect
predetermined period
Prior art date
Application number
PCT/CN2011/076907
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French (fr)
Chinese (zh)
Inventor
谢强
宋伟
Original Assignee
华为技术有限公司
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Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2011/076907 priority Critical patent/WO2012106870A1/en
Priority to CN201180001334.5A priority patent/CN102308464B/en
Publication of WO2012106870A1 publication Critical patent/WO2012106870A1/en

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/0003Details of control, feedback or regulation circuits
    • H02M1/0032Control circuits allowing low power mode operation, e.g. in standby mode
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to the field of DC-DC conversion circuits, and more particularly to a method for improving the efficiency of a DC-DC conversion circuit and a DC-DC conversion circuit control device.
  • DC (D ir ec t Cur r en t, DC) -
  • the DC conversion circuit converts the input DC voltage into an output DC voltage with a higher or lower voltage value for use by the load device.
  • Figure 1 shows a common BUCK type DC-DC converter circuit that converts the input DC voltage to an output DC voltage with a lower voltage value.
  • V in is the input DC voltage
  • V. The output DC voltage generated after the DC-DC conversion is applied to the load device.
  • R. Is the equivalent resistance of the load device.
  • N ( N > 2 ) P-channel MOSFETs (field effect transistors) are connected in parallel between point a and point b on the circuit, and M ( M > 2 ) N-channels are connected in parallel between point c and point b.
  • the N P-channel MOSFETs and the M N-channel MOSFETs are power M0 SFETs of a DC-DC conversion circuit.
  • the inductor L is connected in series with each power MOSFET. When the N P-channel MOSFETs are turned on and the M N-channel type MO SFETs are turned off, the inductor L stores energy; when the N P-channel MOS FETs are turned off, M N-channel MOSFETs When turned on, the inductor L releases the stored energy.
  • the transistor controller 1 1 is electrically connected to all of the power MOSFETs to control the on and off of the power MOSFET, so that the P-channel type MO SFET and the N-channel MOSFET as the power MO SFET are sequentially turned on according to a predetermined cycle. State, and make the circuit output a stable V. Give the load device 1 2 .
  • the prior art has at least the following problems:
  • the power MOS FET frequently turns on and off, which causes charging and discharging of the gate capacitance.
  • the loss increases and the current I flows through the load device.
  • the load device is in a light load state.
  • the charge and discharge loss of the gate capacitance of the power MOS FET does not decrease, resulting in the efficiency of the DC-DC conversion circuit (load The ratio of the power on the device to the total power of the DC-DC converter circuit is reduced, and the power is wasted more.
  • Embodiments of the present invention provide a method and a DC-DC conversion circuit control device for improving the efficiency of a DC-DC conversion circuit, which improve the efficiency of a DC-DC conversion circuit under light load conditions.
  • a method for improving the efficiency of a DC-DC conversion circuit comprising: detecting, flowing through the DC-DC conversion circuit while turning on and off a plurality of MOSFET field effect transistors in a DC-DC conversion circuit according to a predetermined period Current for energy storage and release of the inductor coil;
  • the gate of a portion of the MOSFET field effect transistor in the MOSFET field effect transistor delivers a control level such that the portion of the MOSFET field effect transistor is continuously turned off and is no longer turned on for a predetermined period.
  • a DC-DC conversion circuit control device includes:
  • a level control unit configured to control on and off of the plurality of MOSFET field effect transistors in the DC-DC conversion circuit according to a predetermined period
  • a current detecting unit configured to detect an inductance flowing through the DC-DC conversion circuit for energy storage and release while turning on and off a plurality of MOSFET field effect transistors in the DC-DC conversion circuit according to a predetermined period Current of the coil;
  • the level control unit is further configured to: when the current flowing through the inductor is lower than a preset current lower threshold, transmit control power to a gate of a part of the MOSFET field effect transistors of the plurality of MOSFET field effect transistors Flat, so that the portion of the MO SFET field effect transistor is continuously turned off, and is no longer turned on according to a predetermined period.
  • the method for improving the efficiency of a DC-DC conversion circuit and the DC-DC conversion circuit control device provided by the embodiments of the present invention, by detecting the current in the inductor coil, and when the current of the inductor coil is lower than a preset current lower limit threshold MO SFET delivers control point levels such that the portion The MOSFET is in an off state, which avoids the gate capacitance charge and discharge loss caused by the partial MOSFET during the periodic opening and closing operations, thereby improving the efficiency of the DC-DC conversion circuit under light load conditions.
  • FIG. 1 is a schematic diagram of a BUCK type DC-DC conversion circuit in the prior art
  • FIG. 2 is a flowchart of a method for improving the efficiency of a DC-DC conversion circuit according to an embodiment of the present invention
  • FIG. 3 is an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a non-synchronous rectification BUCK type DC-DC conversion circuit using the method for improving the efficiency of a DC-DC conversion circuit according to an embodiment of the present invention
  • FIG. 5 is a schematic diagram of a synchronous rectification BOOST type DC-DC conversion circuit using the method for improving the efficiency of a DC-DC conversion circuit provided by an embodiment of the present invention
  • FIG. 6 is a schematic diagram of a non-synchronous rectified BOOST type DC-DC conversion circuit using the method for improving the efficiency of a DC-DC conversion circuit provided by an embodiment of the present invention
  • FIG. 7 is a block diagram of a DC-DC conversion circuit control apparatus according to an embodiment of the present invention.
  • the transistor controller 11 controls the power MOSFET to be turned on and off at a predetermined cycle.
  • the transistor controller 11 is electrically connected to the gates of respective N-channel type and P-channel MOSFETs as power MS0FETs.
  • the transistor controller 11 controls the N-channel type and P-channel type MOSFETs to be alternately turned on by supplying a level signal to the power MOSFET.
  • the transistor controller 11 outputs a level to the gate of the MOSFET, so that the voltage difference between the gate and the source of the N P-channel MOSFETs in the circuit becomes zero.
  • the P-channel MOSFET is turned off, and the gate output level of the M N-channel MOSFETs is controlled to control the N-channel MOSFET.
  • the on state, the duration is TKT); after L, the transistor controller 1 1 turns off the N-channel MOSFET through the level output, and simultaneously turns the P-channel MOSFET into a conducting state, and the duration is TL. .
  • alternating conduction of the N-channel type MOSFET and the P-channel type MOSFET is realized.
  • Embodiments of the present invention provide a method for improving the efficiency of a DC-DC conversion circuit. As shown in FIG. 2, the method includes the following steps:
  • a plurality of MOSFETs used as power MOSFETs are divided into two groups, two sets of MOSFETs are alternately turned on at a predetermined cycle, and a current flowing through an inductor for energy storage and release is also described.
  • the predetermined period changes.
  • a group of M0S FETs can be formed by N-channel MOSFETs, and another group of MOSFETs can be formed by P-channel MOSFETs, and the two sets of MOSFETs are alternately turned on.
  • the current flowing through the inductor is detected to determine whether the value of the current flowing through the inductor is lower than a preset lower current threshold. If the value of the current flowing through the inductor is not lower than the current lower threshold, the current detection is continued; if the value of the current flowing through the inductor is lower than the lower current threshold, the process proceeds to step 102. .
  • a control level is sent to a gate of a part of the plurality of M0 SFET field effect transistors, so that The partial MOSFET field effect transistor is continuously turned off. It is no longer turned on according to a predetermined period.
  • the current flowing through the load device continues to decrease so as to be lower than the predetermined light load current value, at which time the load device enters a light load state.
  • the current flowing through the inductor will be lower than the lower current threshold when periodically changing.
  • the portion of the MOSFET is turned off by detecting the control level to the gate of the portion of the MOSFET used as the power MOSFET, in the event that the current flowing through the inductor is detected to be below the lower current threshold. Specifically, after the control level is input to the gate of the partial MOSFET, the voltage difference between the gate and the source of each of the partial MOSFETs becomes zero, so that some of the MOSFETs are turned off. status. Thereafter, the transistor controller in the DC-DC conversion circuit maintains the control level such that the portion of the MOSFET continues to be in a cut-off state due to the input of the control level, and is no longer turned on in accordance with the predetermined period.
  • the portion of the MOSFET that is in an off state for a long time is equivalent to having been detached from the DC-DC conversion circuit. Since the number of MOSFETs is reduced in the circuit, the number of times the MOSFET is periodically turned on and off is correspondingly reduced, thereby reducing the charge and discharge loss of the gate capacitance when the MOSFET is frequently turned on and off.
  • the method may further include step 103.
  • the current flowing through the inductor coil will be higher than the current upper threshold (the current upper threshold is greater than the current lower threshold). Stopping the delivery of the control level when detecting that the current flowing through the inductor is higher than the upper limit of the current, the gate of the portion of the MOSFET is not controlled by the control after stopping the delivery of the control level Level control, the transistor controller in the DC-DC conversion circuit can continue to conduct the on and off control of the portion of the MOSFET for the predetermined period.
  • FIG. 3 For example, as shown in FIG. 3, four P-channel type MSOFETs are connected in parallel on the BUCK type DC-DC conversion circuit, respectively, M P1 , M P2 , M P3 , M P4 , and three N-channels in parallel.
  • the channel MOSFETs are M N1 , M N2 , M N3 , which are the power MOSFETs in the circuit.
  • a transistor controller 31 is coupled to the gates of the seven MOSFETs to control the turn-on and turn-off of the MOSFET. Output voltage V. Loaded on the load device 32. Assume that the transistor controller 31 is provided with an OSC (oscillator), and the oscillation period of the 0SC is T. .
  • OSC oscillation period of the 0SC
  • the transistor controller 31 sends the level signal to the gate of the MOSFET, and controls M P1 , M P2 , M P3 , and M P4 to be in an on state, and M N1 , M N2 , and M N3 are in an off state; During the remaining time of the oscillation period, the transistor controller 31 turns off M P1 , M P2 , M P3 , and M P4 , and turns M N1 , M N2 , and M N3 into an on state, thus performing cyclic switching.
  • the duration of the predetermined period is T. . When the circuit is running, it can flow through the inductor L in Figure 3. The current is detected.
  • the predetermined period may be set by using a method other than the 0SC, which is not limited by the embodiment of the present invention. If flowing through the inductor L. The current below the lower current threshold will turn off part of the MOSFET to reduce the charge and discharge losses of the gate capacitance of the MOSFET.
  • the transistor controller 31 flows through the inductor L through the pair. Current i. The detection of some MOSFETs gives a control level to make it off. For the MOSFET receiving the control level, it can be set in advance. For example, the setting transistor controller 31 simultaneously issues control levels to M N1 , M N2 , 3 ⁇ 4 ⁇ to turn off the three MOSFETs.
  • Pi I 0 2 [R!+(1-D) R N +DR P ] , which is the DC loss of the entire circuit, where R N and R P are the conduction of the N-channel MOSFET and the P-channel MOSFET, respectively.
  • D is the turn-on time of the P-channel MOSFET at one T.
  • the percentage occupied by (1-D) is the turn-on time of the N-channel MOSFET at one T.
  • the percentage within is the equivalent resistance of the rest of the circuit except the MOSFET and load device 32.
  • the load device 32 is decoupled from the light load state when the current L is detected. Above the current upper threshold, the transistor controller 31 stops transmitting the control level to M N1 , M N2 , M P1 . Thereafter, transistor controller 31 continues to T. For the period, four P-channel MOSFETs and three N-channel MOSFETs are alternately turned on and off.
  • the number of MOSFETs that need to receive the control level may be preset according to different requirements for efficiency ⁇ . For example, in an application scenario, it is necessary to turn off at least three MOSFETs to meet the requirement of efficiency ⁇ , and the transistor controller 31 in FIG. 3 transmits the control level to three of the seven MOSFETs to ensure that Efficiency ⁇ . In the actual operation, three MOSFETs can be randomly selected from the seven MOSFETs, which is not limited in the embodiment of the present invention.
  • the current flowing through the inductor is measured in Figure 3.
  • the DC-DC conversion circuit described in FIG. 3 is a synchronous rectification BUCK type circuit structure which is common in practical applications, as shown in FIG.
  • J > 2 P-channel type MOSFETs are connected in parallel as a power MOSFET, and a diode D is also provided in the circuit.
  • the transistor controller 41 controls the P-channel type MOSFET to periodically turn on and off, thereby periodically being in an on state and an off state.
  • the diode D is in an off state
  • the P-channel MOSFET is turned off by the transistor controller 41, the diode D is turned on. status.
  • N-channel MOSFETs are not deployed in such circuits.
  • the transistor controller 41 issues a control level to a portion of the P-channel type MOSFET by detecting the current flowing through the inductor L so as to be in an off state. It is possible to reduce the charge and discharge loss of the gate capacitance of the MOSFET by having Jo (Jo ⁇ J) MOSFETs receiving the control level and being in a long-time off state, and no periodic on/off operation is performed. The efficiency of the DC-DC conversion circuit is improved.
  • the output power of the load device 42 gradually rises, and the transistor controller 41 stops moving toward J.
  • Each MOSFET sends the control level, and all MOSFETs can be alternately turned on periodically.
  • the voltage of the parallel P-channel MOSFET can also be measured, and the current flowing through the P-channel MOSFET in the on state, that is, the current i u can be calculated.
  • the DC-DC conversion circuit may be a BUCK type circuit that converts an input DC voltage into an output DC voltage having a lower voltage value, or a BOOST type circuit that converts an input DC voltage into an output DC voltage having a higher voltage value.
  • the BOOST type circuit can be divided into a synchronous rectification BOOST type circuit and a non-synchronous rectification BOOST type circuit. The following description will be made by taking FIG. 5 and FIG. 6 as an example.
  • Fig. 5 is a synchronous rectification BOOST type DC-DC conversion circuit.
  • the transistor controller 51 alternately turns on the N-channel type MOSFET and the P-channel type MOSFET by controlling the MOSFET to be turned on and off periodically.
  • the transistor controller 51 issues a control level to a portion of the MOSFET by detecting the current i u flowing through the inductor L 2 to be turned off. .
  • S. (S. ⁇ R + S ) MOSFETs receive the control level In the long-term cut-off state, periodic opening and closing operations are no longer performed. For which ones to choose
  • the MOSFET is used as the MOSFET receiving control level, which can be set in advance.
  • MOSFET receiving control level which can be set in advance.
  • the output power of the load device 52 gradually rises, and the transistor controller 51 stops transmitting the control level to the portion of the MOSFET, and all of the MOSFETs can be periodically alternately turned on.
  • Fig. 6 is a non-synchronous rectification BOOST type DC-DC conversion circuit.
  • X X > 2
  • N-channel type MOSFETs connected in parallel
  • a diode D lD transistor controller 61 is arranged in the circuit to control the N-channel type MOSFET to periodically turn on and off, thereby being periodically turned on. And cutoff status.
  • the diode 0 is in the off state
  • the diode 0 1 is in the conducting state. Pass state.
  • a P-channel MOSFET is not deployed in such a circuit.
  • the transistor controller 61 issues a control level to a portion of the N-channel type MOSFET by detecting the current flowing through the inductor L 3 to be in an off state. It can be assumed that there is X. (Xo ⁇ X) MOSFETs receive the control level and are in a long-term off state, no longer periodically turn on and off, thereby reducing the charge and discharge loss of the gate capacitance of the MOSFET and improving the DC-DC conversion. The efficiency of the circuit.
  • each MOSFET sends the control level, and all MOSFETs can be alternately turned on periodically.
  • the voltage of the parallel N-channel MOSFET can also be measured, and the current flowing through the P-channel MOSFET in the on state, that is, the current i u can be calculated.
  • DC-DC conversion circuits such as synchronous rectification BUCK type, asynchronous rectification BUCK type, synchronous rectification BOO ST type, and asynchronous rectification BOOST type, can be preset according to different requirements of efficiency in different application scenarios.
  • the number of control level M0 SFETs refer to the foregoing description of the synchronous rectification BUCK type DC-DC conversion circuit of FIG. 3, and details are not described herein again.
  • the embodiment of the present invention further provides a DC-DC conversion circuit control device.
  • the device includes: a level control unit 7.1 and a current detecting unit 72.
  • the level control unit 7 1 is for controlling the on and off of the plurality of MOSFET field effect transistors in the DC-DC conversion circuit in accordance with a predetermined period;
  • the current detecting unit 72 is configured to detect, during the predetermined period of turning on and off the plurality of MOSFET FETs in the DC-DC conversion circuit, the energy storage and release flowing through the DC-DC conversion circuit. Current of the inductor coil;
  • the level control unit is further configured to control a gate of a portion of the MOSFET field effect transistors in the plurality of MOSFET FETs when the current flowing through the inductor is lower than a preset lower current threshold
  • the level is such that the portion of the M0 SFET field effect transistor is continuously turned off and is no longer turned on for a predetermined period.
  • the portion of the MOSFET that is in the off state for a long time is equivalent to having been detached from the DC-DC conversion circuit. Since the number of MOSFETs is reduced in the circuit, the number of times the M0 SFET is turned on and off in the predetermined period is also reduced, thereby reducing the charge and discharge loss of the gate capacitance when the MOSFET is frequently turned on and off.
  • the level control unit 71 is further configured to stop transmitting the control level when the current flowing through the inductor coil is higher than a current upper limit threshold, so that the part of the MOSFET FET continues to follow a predetermined period Turn-on and turn-off.
  • the transistor controller in the DC-DC conversion circuit can continue to turn on and off the portion M 0 S F E T at the predetermined period.
  • the device according to the embodiment of the invention can be applied to four DC-DC conversion circuits, such as a synchronous rectification BUCK type, an asynchronous rectification BUCK type, a synchronous rectification BOOST type, and an asynchronous rectification BOOST type.
  • DC-DC conversion circuits such as a synchronous rectification BUCK type, an asynchronous rectification BUCK type, a synchronous rectification BOOST type, and an asynchronous rectification BOOST type.
  • the sum control unit of the device and the level control unit 7 The current detecting unit 72 is integrated into the transistor controller 81 of the DC-DC converting circuit.
  • the current detecting unit 71 and the level controlling unit 72 may also be independently disposed outside the transistor controller 81, and respectively connected to the gates of the respective MOSFETs.
  • the device is integrated into the transistor controller 81 of the DC-DC conversion circuit, which is a preferred solution, but the embodiment of the invention does not limit this.
  • 8 is an example of a non-synchronous rectification BUCK type DC-DC conversion circuit. Of course, it may be any one of a synchronous rectification BUCK type, a synchronous rectification BOOST type, and a non-synchronous rectification BOOST type DC-DC conversion circuit. The embodiments of the invention are not described again.
  • the method for improving the efficiency of a DC-DC conversion circuit and the DC-DC conversion circuit control device provided by the embodiments of the present invention, by detecting the current in the inductor coil, and when the current of the inductor coil is lower than a preset current lower limit threshold
  • the MOSFET delivers a control point level, so that the part of the MOSFET is in an off state, which avoids the gate capacitance charge and discharge loss caused by the partial MOSFET during the periodic opening and closing operations, thereby improving the DC-DC under light load conditions.
  • the efficiency of the conversion circuit by detecting the current in the inductor coil, and when the current of the inductor coil is lower than a preset current lower limit threshold
  • the MOSFET delivers a control point level, so that the part of the MOSFET is in an off state, which avoids the gate capacitance charge and discharge loss caused by the partial MOSFET during the periodic opening and closing operations, thereby improving the DC-DC under light load conditions.
  • the present invention can be implemented by means of software plus necessary general hardware, and of course, by hardware, but in many cases, the former is a better implementation. .
  • the technical solution of the present invention which is essential or contributes to the prior art, may be embodied in the form of a software product stored in a readable storage medium, such as a floppy disk of a computer.
  • a hard disk or optical disk, etc. includes instructions for causing a computer device (which may be a personal computer, server, or network device, etc.) to perform the methods described in various embodiments of the present invention.

Abstract

A method for improving the efficiency of a DC-DC conversion circuit and a control apparatus for a DC-DC conversion circuit, the method comprising: while conducting and cutting off a plurality of MOSFET field effect transistors (MP1, MP2, MP3, MP4; MN1, MN2, MN3) in the conversion circuit according to a preset period, detecting the current flowing through the induction coil (L0) for energy storage and release in the conversion circuit; when the current flowing through the induction coil (L0) is lower than the lower threshold of the preset current, delivering a control level to the gates of a part of the plurality of MOSFET field effect transistors (MP1, MP2, MP3, MP4; MN1, MN2, MN3), thereby enabling the part of the MOSFET field effect transistors to stay in a cut-off state and no longer conducting according to the preset period. The method improves the efficiency of the conversion circuit in a light load state.

Description

提高 DC- DC转换电路的效率的方法和 DC- DC转换电路控制装置 技术领域  Method for improving efficiency of DC-DC conversion circuit and DC-DC conversion circuit control device
本发明涉及 DC-DC转换电路领域, 尤其涉及一种提高 DC-DC转换电 路的效率的方法和 DC-DC转换电路控制装置。  The present invention relates to the field of DC-DC conversion circuits, and more particularly to a method for improving the efficiency of a DC-DC conversion circuit and a DC-DC conversion circuit control device.
背景技术 Background technique
DC (D i r ec t Cur r en t ,直流电) -DC转换电路可以将输入直流电压转换 为一个电压值更高或更低的输出直流电压, 以供负载设备使用。 图 1是 一种常见的 BUCK型 DC-DC转换电路,能够实现将输入直流电压转换为电 压值更低的输出直流电压。在图 1中, Vin为输入直流电压, V。为经过 DC-DC 转换后生成的输出直流电压, 加在负载设备上。 R。为负载设备的等效电 阻。 在电路上的 a点和 b点之间并联了 N ( N > 2 )个 P沟道型 MOSFET (场 效应晶体管) , c点和 b点之间并联了 M ( M > 2 ) 个 N沟道型 M0SFET。 所述 N个 P沟道型 MOSFET和 M个 N沟道型 MOSFET为 DC-DC转换电路的 功率 M0 SFET。 电感线圈 L与各个功率 MOSFET 串联。 当所述 N个 P沟道 型 MOSFET导通、 M个 N沟道型 MO SFET截止时, 电感线圈 L存储能量; 当所述 N个 P沟道型 MOS FET截止、 M个 N沟道型 MOSFET导通时, 电感 线圈 L 将存储的能量释放出去。 晶体管控制器 1 1 分别与全部的功率 MOSFET电连接,对功率 MOSFET的导通、截止进行控制,使作为功率 MO SFET 的 P沟道型 MO SFET和 N沟道型 MOSFET按照预定周期依次处于导通状态, 并使电路输出稳定的 V。给负载设备 1 2。 DC (D ir ec t Cur r en t, DC) - The DC conversion circuit converts the input DC voltage into an output DC voltage with a higher or lower voltage value for use by the load device. Figure 1 shows a common BUCK type DC-DC converter circuit that converts the input DC voltage to an output DC voltage with a lower voltage value. In Figure 1, V in is the input DC voltage, V. The output DC voltage generated after the DC-DC conversion is applied to the load device. R. Is the equivalent resistance of the load device. N ( N > 2 ) P-channel MOSFETs (field effect transistors) are connected in parallel between point a and point b on the circuit, and M ( M > 2 ) N-channels are connected in parallel between point c and point b. Type MOSFET. The N P-channel MOSFETs and the M N-channel MOSFETs are power M0 SFETs of a DC-DC conversion circuit. The inductor L is connected in series with each power MOSFET. When the N P-channel MOSFETs are turned on and the M N-channel type MO SFETs are turned off, the inductor L stores energy; when the N P-channel MOS FETs are turned off, M N-channel MOSFETs When turned on, the inductor L releases the stored energy. The transistor controller 1 1 is electrically connected to all of the power MOSFETs to control the on and off of the power MOSFET, so that the P-channel type MO SFET and the N-channel MOSFET as the power MO SFET are sequentially turned on according to a predetermined cycle. State, and make the circuit output a stable V. Give the load device 1 2 .
在实现上述方案的过程中,发明人发现现有技术至少存在以下问题: 当 DC-DC转换电路的输出功率较低时,功率 MOS FET频繁进行开启、 关闭 动作, 会造成栅极电容的充放电损耗增大, 流经负载设备的电流 I。低于 预设定的轻载电流值 ,使得负载设备处于轻载状态,此时由于功率 MOS FET 的栅极电容的充放电损耗没有下降, 导致 DC-DC转换电路的效率 (负载 设备上的功率与 DC-DC转换电路的总功率的比值)降低, 功率浪费较多。 In the process of implementing the above solution, the inventors have found that the prior art has at least the following problems: When the output power of the DC-DC conversion circuit is low, the power MOS FET frequently turns on and off, which causes charging and discharging of the gate capacitance. The loss increases and the current I flows through the load device. Below the preset light load current value, the load device is in a light load state. At this time, the charge and discharge loss of the gate capacitance of the power MOS FET does not decrease, resulting in the efficiency of the DC-DC conversion circuit (load The ratio of the power on the device to the total power of the DC-DC converter circuit is reduced, and the power is wasted more.
发明内容 Summary of the invention
本发明的实施例提供一种提高 DC-DC 转换电路的效率的方法和 DC-DC转换电路控制装置, 提升了轻载状态下 DC-DC转换电路的效率。  Embodiments of the present invention provide a method and a DC-DC conversion circuit control device for improving the efficiency of a DC-DC conversion circuit, which improve the efficiency of a DC-DC conversion circuit under light load conditions.
为达到上述目的, 本发明的实施例采用如下技术方案:  In order to achieve the above object, the embodiment of the present invention adopts the following technical solutions:
一种提高 DC-DC转换电路的效率的方法, 包括: 在按照预定周期导通以及截止 DC-DC转换电路中的多个 M0SFET场 效应晶体管的同时,检测流经所述 DC-DC转换电路中的用于能量存储与 释放的电感线圈的电流;  A method for improving the efficiency of a DC-DC conversion circuit, comprising: detecting, flowing through the DC-DC conversion circuit while turning on and off a plurality of MOSFET field effect transistors in a DC-DC conversion circuit according to a predetermined period Current for energy storage and release of the inductor coil;
所述流经电感线圈的电流低于预设的电流下限阈值时, 向所述多个 When the current flowing through the inductor coil is lower than a preset lower current threshold, the plurality of
M0SFET场效应晶体管中的部分 M0SFET场效应晶体管的栅极输送控制电 平, 以使得所述部分 M0SFET场效应晶体管持续处于截止状态, 而不再按 照预定周期导通。 The gate of a portion of the MOSFET field effect transistor in the MOSFET field effect transistor delivers a control level such that the portion of the MOSFET field effect transistor is continuously turned off and is no longer turned on for a predetermined period.
一种 DC-DC转换电路控制装置, 包括:  A DC-DC conversion circuit control device includes:
电平控制单元, 用于按照预定周期对 DC-DC 转换电路中的多个 M0SFET场效应晶体管进行导通及截止的控制;  a level control unit, configured to control on and off of the plurality of MOSFET field effect transistors in the DC-DC conversion circuit according to a predetermined period;
电流检测单元, 用于在按照预定周期导通以及截止 DC-DC转换电路 中的多个 M0SFET场效应晶体管的同时,检测流经所述 DC-DC转换电路中 的用于能量存储与释放的电感线圈的电流;  a current detecting unit, configured to detect an inductance flowing through the DC-DC conversion circuit for energy storage and release while turning on and off a plurality of MOSFET field effect transistors in the DC-DC conversion circuit according to a predetermined period Current of the coil;
所述电平控制单元还用于在所述流经电感线圈的电流低于预设的电 流下限阈值时, 向所述多个 M0SFET场效应晶体管中的部分 M0SFET场效 应晶体管的栅极输送控制电平,以使得所述部分 MO S F E T场效应晶体管持 续处于截止状态, 而不再按照预定周期导通。  The level control unit is further configured to: when the current flowing through the inductor is lower than a preset current lower threshold, transmit control power to a gate of a part of the MOSFET field effect transistors of the plurality of MOSFET field effect transistors Flat, so that the portion of the MO SFET field effect transistor is continuously turned off, and is no longer turned on according to a predetermined period.
本发明实施例提供的提高 DC-DC转换电路的效率的方法和 DC-DC转 换电路控制装置, 通过检测电感线圈中的电流, 并在电感线圈的电流低 于预设的电流下限阈值时对部分 MO S F E T输送控制点电平,使得所述部分 MOSFET处于截止状态, 避免了所述部分 MOSFET在周期性的开启、 关闭 动作中造成的栅极电容充放电损耗, 从而提升了轻载状态下 DC-DC转换 电路的效率。 The method for improving the efficiency of a DC-DC conversion circuit and the DC-DC conversion circuit control device provided by the embodiments of the present invention, by detecting the current in the inductor coil, and when the current of the inductor coil is lower than a preset current lower limit threshold MO SFET delivers control point levels such that the portion The MOSFET is in an off state, which avoids the gate capacitance charge and discharge loss caused by the partial MOSFET during the periodic opening and closing operations, thereby improving the efficiency of the DC-DC conversion circuit under light load conditions.
附图说明 DRAWINGS
图 1为现有技术中的一种 BUCK型 DC-DC转换电路的示意图; 图 2为本发明实施例中提高 DC-DC转换电路的效率的方法的流程图; 图 3为使用本发明实施例提供的提高 DC-DC转换电路的效率的方法 的同步整流 BUCK型 DC-DC转换电路的示意图;  1 is a schematic diagram of a BUCK type DC-DC conversion circuit in the prior art; FIG. 2 is a flowchart of a method for improving the efficiency of a DC-DC conversion circuit according to an embodiment of the present invention; FIG. 3 is an embodiment of the present invention. A schematic diagram of a synchronous rectification BUCK type DC-DC conversion circuit provided with a method for improving the efficiency of a DC-DC conversion circuit;
图 4为使用本发明实施例提供的提高 DC-DC转换电路的效率的方法 的非同步整流 BUCK型 DC-DC转换电路的示意图;  4 is a schematic diagram of a non-synchronous rectification BUCK type DC-DC conversion circuit using the method for improving the efficiency of a DC-DC conversion circuit according to an embodiment of the present invention;
图 5为使用本发明实施例提供的提高 DC-DC转换电路的效率的方法 的同步整流 BOOST型 DC-DC转换电路的示意图;  5 is a schematic diagram of a synchronous rectification BOOST type DC-DC conversion circuit using the method for improving the efficiency of a DC-DC conversion circuit provided by an embodiment of the present invention;
图 6为使用本发明实施例提供的提高 DC-DC转换电路的效率的方法 的非同步整流 BOOST型 DC-DC转换电路的示意图;  6 is a schematic diagram of a non-synchronous rectified BOOST type DC-DC conversion circuit using the method for improving the efficiency of a DC-DC conversion circuit provided by an embodiment of the present invention;
图 7为本发明实施例中 DC-DC转换电路控制装置的框图;  7 is a block diagram of a DC-DC conversion circuit control apparatus according to an embodiment of the present invention;
图 8为本发明实施例中 DC-DC转换电路控制装置所在的非同步整流 8 is a non-synchronous rectification in which a DC-DC conversion circuit control device is located in an embodiment of the present invention;
BUCK型 DC-DC转换电路的示意图。 Schematic diagram of a BUCK type DC-DC converter circuit.
具体实施方式 Detailed ways
DC-DC转换电路中的有晶体管控制器, 控制功率 MOSFET以预定周期 处于导通及截止。 以图 1为例, 晶体管控制器 11分别与作为功率 MS0FET 的各个 N沟道型、 P沟道型 MOSFET的栅极电连接。 晶体管控制器 11通 过向功率 MOSFET输送电平信号, 控制 N沟道型、 P沟道型 MOSFET交替 的处于导通状态。 具体的, 在一个预定周期 T内, 晶体管控制器 11通过 将电平输出给 MOSFET的栅极, 使得电路中的 N个 P沟道型 MOSFET栅极 和源极间的电压差变为零, 从而使 P沟道型 MOSFET处于截止状态, 同时 向 M个 N沟道型 MOSFET的栅极输出电平以控制 N沟道型 MOSFET处于导 通状态,持续的时间为 T K T) ; 经过 L后, 晶体管控制器 1 1通过电平 输出使 N沟道型 M0SFET处于截止状态, 同时使 P沟道型 M0S FET处于导 通状态, 持续时间为 T-L。 由此, 实现了 N沟道型 M0SFET和 P沟道型 M0SFET的交替导通。 下面结合本发明实施例的附图对本发明实施例的技术方案进行清楚、 完整地描述, 显然, 所描述的实施例仅仅是本发明一部分实施例, 而不是全 部的实施例。 基于本发明中的实施例, 本领域普通技术人员在没有作出创造 性劳动前提下所获得的所有其他实施例, 都属于本发明保护的范围。 实施例 1: In the DC-DC conversion circuit, there is a transistor controller that controls the power MOSFET to be turned on and off at a predetermined cycle. Taking FIG. 1 as an example, the transistor controller 11 is electrically connected to the gates of respective N-channel type and P-channel MOSFETs as power MS0FETs. The transistor controller 11 controls the N-channel type and P-channel type MOSFETs to be alternately turned on by supplying a level signal to the power MOSFET. Specifically, in a predetermined period T, the transistor controller 11 outputs a level to the gate of the MOSFET, so that the voltage difference between the gate and the source of the N P-channel MOSFETs in the circuit becomes zero. The P-channel MOSFET is turned off, and the gate output level of the M N-channel MOSFETs is controlled to control the N-channel MOSFET. The on state, the duration is TKT); after L, the transistor controller 1 1 turns off the N-channel MOSFET through the level output, and simultaneously turns the P-channel MOSFET into a conducting state, and the duration is TL. . Thereby, alternating conduction of the N-channel type MOSFET and the P-channel type MOSFET is realized. The technical solutions of the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings of the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention. Example 1:
本发明实施例提供了一种提高 DC-DC转换电路的效率的方法, 如 图 2所示, 所述方法包括以下步骤:  Embodiments of the present invention provide a method for improving the efficiency of a DC-DC conversion circuit. As shown in FIG. 2, the method includes the following steps:
1 01、 在按照预定周期导通以及截止 DC-DC 转换电路中的多个 M0SFET场效应晶体管的同时, 检测流经所述 DC-DC转换电路中的用于 能量存储与释放的电感线圈的电流。  1 01. Detecting a current flowing through an inductor of the DC-DC conversion circuit for energy storage and release while turning on and off a plurality of MOSFET field effect transistors in the DC-DC conversion circuit according to a predetermined period .
在 DC-DC转换电路中, 用作功率 M0SFET的多个 M0SFET分为两组, 两组 M0SFET以预定周期交替处于导通状态, 流经用于能量存储与释放 的电感线圈的电流也以所述预定周期进行变化。 实际应用中, 为了使电 路的结构和控制更为简单, 可以用 N沟道型 M0SFET构成一组 M0S FET , 用 P沟道型 M0SFET构成另一组 M0SFET,两组 M0SFET交替导通。  In the DC-DC conversion circuit, a plurality of MOSFETs used as power MOSFETs are divided into two groups, two sets of MOSFETs are alternately turned on at a predetermined cycle, and a current flowing through an inductor for energy storage and release is also described. The predetermined period changes. In practical applications, in order to make the structure and control of the circuit simpler, a group of M0S FETs can be formed by N-channel MOSFETs, and another group of MOSFETs can be formed by P-channel MOSFETs, and the two sets of MOSFETs are alternately turned on.
对所述流经电感线圈的电流进行检测, 判断所述流经电感线圈的 电流的数值是否低于预设定的电流下限阈值。若所述流经电感线圈的电 流的数值不低于所述电流下限阈值, 则继续进行电流的检测; 若所述流 经电感线圈的电流的数值低于所述电流下限阈值, 转向步骤 1 02。  The current flowing through the inductor is detected to determine whether the value of the current flowing through the inductor is lower than a preset lower current threshold. If the value of the current flowing through the inductor is not lower than the current lower threshold, the current detection is continued; if the value of the current flowing through the inductor is lower than the lower current threshold, the process proceeds to step 102. .
实际应用中, 为测得流经电感线圈的电流, 可以设置一个与电感 线圈串联的检测电阻, 通过测量所述检测电阻两端的电压, 根据公式: 电流 =电压 /电阻, 得到流经所述电感线圈的电流的数值。  In practical applications, in order to measure the current flowing through the inductor coil, a detection resistor connected in series with the inductor coil may be provided, and by measuring the voltage across the sense resistor, according to the formula: current=voltage/resistance, the flow through the inductor is obtained. The value of the current of the coil.
1 02、 所述流经电感线圈的电流低于预设的电流下限阈值时, 向所 述多个 M0 SFET场效应晶体管中的部分 MO SFET场效应晶体管的栅极输送 控制电平, 以使得所述部分 M0SFET场效应晶体管持续处于截止状态, 而不再按照预定周期导通。 1 02. When the current flowing through the inductor coil is lower than a preset lower current threshold, a control level is sent to a gate of a part of the plurality of M0 SFET field effect transistors, so that The partial MOSFET field effect transistor is continuously turned off. It is no longer turned on according to a predetermined period.
当 DC-DC 转换电路的输出功率持续降低时, 流经所述负载设备的 电流持续降低, 以致低于所述预设定的轻载电流值, 此时所述负载设备 进入轻载状态。在轻载状态下, 所述流经电感线圈的电流在周期性变化 时会低于所述电流下限阈值。在检测到所述流经电感线圈的电流低于所 述电流下限阈值的情况下, 通过向用作功率 MOSFET的所述部分 MOSFET 的栅极输送所述控制电平, 将所述部分 MOSFET关闭。 具体的, 所述控 制电平输入所述部分 MOSFET的栅极后,使得所述部分 MOSFET中的每一 个 MOSFET 的栅极和源极间电压差变为零, 从而使得所述部分 MOSFET 都处于截止状态。 此后, DC-DC 转换电路中的晶体管控制器维持所述 控制电平, 使得所述部分 MOSFET由于输入所述控制电平而持续处于截 止状态, 不再按照所述预定周期进行导通。  When the output power of the DC-DC converter circuit continues to decrease, the current flowing through the load device continues to decrease so as to be lower than the predetermined light load current value, at which time the load device enters a light load state. In the light load state, the current flowing through the inductor will be lower than the lower current threshold when periodically changing. The portion of the MOSFET is turned off by detecting the control level to the gate of the portion of the MOSFET used as the power MOSFET, in the event that the current flowing through the inductor is detected to be below the lower current threshold. Specifically, after the control level is input to the gate of the partial MOSFET, the voltage difference between the gate and the source of each of the partial MOSFETs becomes zero, so that some of the MOSFETs are turned off. status. Thereafter, the transistor controller in the DC-DC conversion circuit maintains the control level such that the portion of the MOSFET continues to be in a cut-off state due to the input of the control level, and is no longer turned on in accordance with the predetermined period.
从电路结构来看, 长时间处于截止状态的所述部分 MOSFET相当于 已经从 DC-DC转换电路中脱离。 由于在电路中减少了 MOSFET的数量, 相应的也减少了 MOSFET周期性进行的开启、 关闭动作的次数, 从而降 低了 MOSFET频繁开启、 关闭时栅极电容的充放电损耗。  In terms of circuit configuration, the portion of the MOSFET that is in an off state for a long time is equivalent to having been detached from the DC-DC conversion circuit. Since the number of MOSFETs is reduced in the circuit, the number of times the MOSFET is periodically turned on and off is correspondingly reduced, thereby reducing the charge and discharge loss of the gate capacitance when the MOSFET is frequently turned on and off.
在完成步骤 102后, 所述方法还可以包括步骤 103。  After completing step 102, the method may further include step 103.
103、 当所述流经电感线圈的电流高于预定的电流上限阈值时, 停 止输送所述控制电平。  103. Stop transmitting the control level when the current flowing through the inductor is higher than a predetermined upper current threshold.
当 DC-DC 转换电路的输出功率持续升高时, 所述流经电感线圈的 电流会高于所述电流上限阈值(所述电流上限阈值大于所述电流下限阈 值)。 在检测到所述流经电感线圈的电流高于所述电流上限阈值时, 停 止输送所述控制电平, 在停止输送所述控制电平后, 所述部分 MOSFET 的栅极不受所述控制电平的控制, DC-DC 转换电路中的晶体管控制器 可以继续对所述部分 MOSFET按照所述预定周期进行导通和截止控制。  When the output power of the DC-DC converter circuit continues to rise, the current flowing through the inductor coil will be higher than the current upper threshold (the current upper threshold is greater than the current lower threshold). Stopping the delivery of the control level when detecting that the current flowing through the inductor is higher than the upper limit of the current, the gate of the portion of the MOSFET is not controlled by the control after stopping the delivery of the control level Level control, the transistor controller in the DC-DC conversion circuit can continue to conduct the on and off control of the portion of the MOSFET for the predetermined period.
举例来说, 如图 3所示, 在 BUCK型 DC-DC转换电路上并联有 4个 P沟道型 MS0FET,分别为 MP1、MP2、MP3、MP4,还并联有 3个 N沟道型 MOSFET, 分别为 MN1、 MN2、 MN3, 这七个 MOSFET作为电路中的功率 M0SFET。 晶体 管控制器 31与所述七个 MOSFET的栅极相连, 控制 MOSFET的开启和关 闭。 输出电压 V。加载在负载设备 32上。 假设晶体管控制器 31 中设置 有 0SC ( oscillator,振荡器) , 0SC的震荡周期为 T。。 在一个震荡周期 中, 晶体管控制器 31通过输送电平信号到 MOSFET的栅极, 控制 MP1、 MP2、 MP3、 MP4处于导通状态时, MN1、 MN2、 MN3处于截止状态; 在同一个振 荡周期的剩余时间里, 晶体管控制器 31使 MP1、 MP2、 MP3、 MP4处于截止状 态, 并使 MN1、 MN2、 MN3处于导通状态, 如此进行循环切换。 所述预定周 期的时长即为 T。。 在电路运行时, 可以对图 3 中流经电感线圈 L。的电 流进行检测。 当然, 也可以使用 0SC之外的其他方式来设定所述预定周 期, 本发明实施例对此不做限定。 如果流经电感线圈 L。的电流低于所 述电流下限阈值, 将关闭部分 MOSFET, 以减少 MOSFET的栅极电容的充 放电损耗。 图 3中, 晶体管控制器 31通过对流经电感线圈 L。的电流 i 。 的检测, 对部分 MOSFET发出控制电平, 以使其处于截止状态。 对于接 收控制电平的 MOSFET, 可以预先进行设定, 比如, 设定晶体管控制器 31同时向 MN1、 MN2, ¾^发出控制电平, 使这三个 MOSFET处于截止状态。 For example, as shown in FIG. 3, four P-channel type MSOFETs are connected in parallel on the BUCK type DC-DC conversion circuit, respectively, M P1 , M P2 , M P3 , M P4 , and three N-channels in parallel. The channel MOSFETs are M N1 , M N2 , M N3 , which are the power MOSFETs in the circuit. A transistor controller 31 is coupled to the gates of the seven MOSFETs to control the turn-on and turn-off of the MOSFET. Output voltage V. Loaded on the load device 32. Assume that the transistor controller 31 is provided with an OSC (oscillator), and the oscillation period of the 0SC is T. . In an oscillating cycle The transistor controller 31 sends the level signal to the gate of the MOSFET, and controls M P1 , M P2 , M P3 , and M P4 to be in an on state, and M N1 , M N2 , and M N3 are in an off state; During the remaining time of the oscillation period, the transistor controller 31 turns off M P1 , M P2 , M P3 , and M P4 , and turns M N1 , M N2 , and M N3 into an on state, thus performing cyclic switching. The duration of the predetermined period is T. . When the circuit is running, it can flow through the inductor L in Figure 3. The current is detected. Certainly, the predetermined period may be set by using a method other than the 0SC, which is not limited by the embodiment of the present invention. If flowing through the inductor L. The current below the lower current threshold will turn off part of the MOSFET to reduce the charge and discharge losses of the gate capacitance of the MOSFET. In FIG. 3, the transistor controller 31 flows through the inductor L through the pair. Current i. The detection of some MOSFETs gives a control level to make it off. For the MOSFET receiving the control level, it can be set in advance. For example, the setting transistor controller 31 simultaneously issues control levels to M N1 , M N2 , 3⁄4^ to turn off the three MOSFETs.
在关闭部分 MOSFET后, 图 3所示的 BUCK型 DC-DC转换电路的效 率 η将得到提高。 下面以公式进行说明。 After turning off part of the MOSFET, the efficiency η of the BUCK type DC-DC converter circuit shown in Figure 3 will be improved. The following is a description of the formula.
Figure imgf000008_0001
Figure imgf000008_0001
其中, P。= Volo, I。为流经负载设备 32 的电流, P。为负载设备 32 的输出功率。  Among them, P. = Volo, I. Is the current flowing through the load device 32, P. The output power of the load device 32.
Pi = I0 2 [R!+(1-D) RN+DRP] , 是整个电路上的直流损耗, 其中 RN、 RP分别为 N沟道型 MOSFET和 P沟道型 MOSFET导通时的电阻值, D为 P 沟道型 MOSFET的开启时间在一个 T。内所占的百分比, (1-D)为 N沟道 型 MOSFET的开启时间在一个 T。内所占的百分比, 为除了 MOSFET和 负载设备 32之外的电路其他部分的等效电阻。 Pi = I 0 2 [R!+(1-D) R N +DR P ] , which is the DC loss of the entire circuit, where R N and R P are the conduction of the N-channel MOSFET and the P-channel MOSFET, respectively. When the resistance value, D is the turn-on time of the P-channel MOSFET at one T. The percentage occupied by (1-D) is the turn-on time of the N-channel MOSFET at one T. The percentage within is the equivalent resistance of the rest of the circuit except the MOSFET and load device 32.
P2 = [VIN 2(CN+CP)+KI。] /T。,P2中, VIN 2(CN+CP) /T。是 MOSFET的栅极电 容充放电造成的耗损功率, KI。/T。是 MOSFET开启、 关闭动作造成的损 耗。 其中 VIN为输入电压, K是一个与 MOSFET开启、 关闭的速度相关的 参数, (^和 CP的数值分别与 N沟道型 MOSFET、 P沟道型 MOSFET在电路 中的数量成正比。 对公式 ( 1 ) 等号右侧的分子、 分母分别除以 1。, 可 以得到:
Figure imgf000008_0002
[ i+(l-D) RN+DRP] (2)
P 2 = [V IN 2 (C N + C P ) + KI. ] /T. , P 2 , V IN 2 (C N + C P ) /T. It is the power loss caused by the charge and discharge of the gate capacitance of the MOSFET, KI. /T. It is the loss caused by the MOSFET turning on and off. Where V IN is the input voltage and K is a parameter related to the speed at which the MOSFET is turned on and off. The values of (^ and C P are proportional to the number of N-channel MOSFETs and P-channel MOSFETs in the circuit, respectively. The numerator and denominator on the right side of the equation ( 1 ) are divided by 1.
Figure imgf000008_0002
[ i+(lD) R N +DR P ] (2)
P2/Io = [VIN 2(CN+Cp) /I0+K] /T„ (3) 可以看出,由于 V。是固定的, η的大小取决于公式(2 )和公式( 3 )。 其中, 通过减少电路中的功率 M0SFET数量, 使 和(^的数值降低, 能 够降低 Ρ2 ; 另外, RN、 RP的数值分别与用作功率 M0SFET 的 N 沟道型 MOSFET , P沟道型 M0SFET在电路中的数量成反比, 若 和(^的数值降 低, 则?会有一定程度的升高。 I。变化时, 会造成的公式 (2 ) 、 ( 3 ) 等号右侧整体取值的变化。 当电路上的负载设备 32处于轻载状态时, I。的值较小, 由于公式 ( 3 ) 的等号右侧部分中的 I。处于分母的位置, 公式( 3 )等号右侧整体取值的变化会比公式( 2 )等号右侧整体取值的 变化更明 显 , 即 当 减 少 电路中 的 功 率 M0SFET 数量 时 , [VIN 2 (CN+CP) / Io+K] /Τ„减少的数值大于 I。 [Ri+ (1 -D) RN+DRP]增加的数值。 因此, 如图 3所示的电路能够提升 η 。 P 2 /Io = [V IN 2 (C N +Cp) /I 0 +K] /T„ (3) It can be seen that due to V. It is fixed, and the size of η depends on formula (2) and formula (3). Among them, by reducing the number of power MOSFETs in the circuit, the sum of (^ is reduced, and Ρ 2 can be lowered; in addition, the values of R N and R P are respectively used as N-channel MOSFETs used as power MOSFETs, P-channel type The number of MOSFETs in the circuit is inversely proportional. If the value of (^ is lower, then there will be a certain degree of increase. I. When changing, the formula (2), (3) will result in the overall value on the right side of the equal sign. When the load device 32 on the circuit is in a light load state, the value of I. is smaller, because I in the right part of the equal sign of equation (3) is at the position of the denominator, formula (3) is equal to the right The change in the overall value of the side will be more obvious than the change in the overall value on the right side of the equation (2), ie when reducing the number of power MOSFETs in the circuit, [V IN 2 (C N + C P ) / Io+K ] /Τ„ The reduced value is greater than I. [Ri+ (1 -D) R N +DR P ] The increased value. Therefore, the circuit shown in Figure 3 can increase η.
随着 DC-DC转换电路的 I。增大, 输出功率逐渐回升, 负载设备 32 由脱离轻载状态, 当检测到电流 L。高于所述电流上限阈值时, 晶体管 控制器 31停止向 MN1、 MN2, MP1发送所述控制电平。 之后, 晶体管控制器 31继续以 T。为周期,控制 4个 P沟道型 M0SFET和 3个 N沟道型 M0SFET 交替的进行开启、 关闭动作。 With the I of the DC-DC converter circuit. As the output power is gradually increased, the load device 32 is decoupled from the light load state when the current L is detected. Above the current upper threshold, the transistor controller 31 stops transmitting the control level to M N1 , M N2 , M P1 . Thereafter, transistor controller 31 continues to T. For the period, four P-channel MOSFETs and three N-channel MOSFETs are alternately turned on and off.
在不同的应用场景下, 根据对效率 η的不同要求, 可预先设置需 要接收所述控制电平的 M0SFET的数量。 比如, 在一种应用场景下, 需 要至少关闭 3个 M0SFET才能符合对效率 η的要求, 则图 3中的晶体管 控制器 31通过向 7个 M0SFET中的 3个输送所述控制电平,以保证效率 η。实际操作中,可以人为的从 7个 M0SFET中随机选取 3个 M0SFET, 本 发明实施例对此不做限定。  In different application scenarios, the number of MOSFETs that need to receive the control level may be preset according to different requirements for efficiency η. For example, in an application scenario, it is necessary to turn off at least three MOSFETs to meet the requirement of efficiency η, and the transistor controller 31 in FIG. 3 transmits the control level to three of the seven MOSFETs to ensure that Efficiency η. In the actual operation, three MOSFETs can be randomly selected from the seven MOSFETs, which is not limited in the embodiment of the present invention.
另外需要说明的是, 为在图 3 中测得流经电感线圈的电流 。, 可 以设置一个与电感线圈串联的检测电阻,通过测量所述检测电阻两端的 电压, 根据公式: 电流 =电压 /电阻, 得到流经所述电感线圈的电流的数 值; 也可以分别测量并联的 N沟道型 M0SFET、 P沟道型 M0SFET的电压, 并根据并联的 M0SFET的等效电阻,算出导通状态下流经 M0SFET的电流, 即电 。。  It should also be noted that the current flowing through the inductor is measured in Figure 3. A detecting resistor connected in series with the inductor coil may be provided. By measuring the voltage across the detecting resistor, the value of the current flowing through the inductor coil is obtained according to the formula: current=voltage/resistance; The voltage of the channel type MOSFET and the P-channel type MOSFET is calculated based on the equivalent resistance of the MOSFET connected in parallel, that is, the current flowing through the MOSFET in the on state. .
在图 3中描述的 DC-DC转换电路是一种实际应用中常见的同步整流 BUCK型电路结构中, 如图 4所示。 在图 4所示的 DC-DC转换电路中,并联有 J > 2 )个 P沟道型 M0SFET 作为功率 M0SFET, 电路中还设置有二极管 D。 晶体管控制器 41控制 P 沟道型 M0SFET周期性的进行开启、 关闭动作, 从而周期性的处于导通 状态和截止状态。当 P沟道型 M0SFET受到晶体管控制器 41的控制处于 导通状态时, 二级管 D处于截止状态, 当 P沟道型 M0SFET受到晶体管 控制器 41的控制处于截止状态时, 二极管 D处于导通状态。 此种电路 中没有部署 N沟道型 M0SFET。 为了实现对 DC-DC转换电路的效率的提 高, 晶体管控制器 41 通过对流经电感线圈 L的电流 ^的检测, 对部 分 P沟道型 M0SFET发出控制电平, 以使其处于截止状态。 可以^ ^设有 Jo ( Jo<J ) 个 M0SFET 接收到所述控制电平而处于长时间的截止状态, 不再进行周期性开启、 关闭动作, 从而减少 M0SFET的栅极电容的充放 电损耗, 提高了 DC-DC转换电路的效率。 The DC-DC conversion circuit described in FIG. 3 is a synchronous rectification BUCK type circuit structure which is common in practical applications, as shown in FIG. In the DC-DC conversion circuit shown in FIG. 4, J > 2) P-channel type MOSFETs are connected in parallel as a power MOSFET, and a diode D is also provided in the circuit. The transistor controller 41 controls the P-channel type MOSFET to periodically turn on and off, thereby periodically being in an on state and an off state. When the P-channel MOSFET is turned on by the transistor controller 41, the diode D is in an off state, and when the P-channel MOSFET is turned off by the transistor controller 41, the diode D is turned on. status. N-channel MOSFETs are not deployed in such circuits. In order to achieve an improvement in the efficiency of the DC-DC converter circuit, the transistor controller 41 issues a control level to a portion of the P-channel type MOSFET by detecting the current flowing through the inductor L so as to be in an off state. It is possible to reduce the charge and discharge loss of the gate capacitance of the MOSFET by having Jo (Jo<J) MOSFETs receiving the control level and being in a long-time off state, and no periodic on/off operation is performed. The efficiency of the DC-DC conversion circuit is improved.
随着流过负载设备 42的电流增大,负载设备 42的输出功率逐渐回 升, 晶体管控制器 41 停止向 J。个 M0SFET 发送所述控制电平,全部 M0SFET都可以进行周期性的交替导通。  As the current flowing through the load device 42 increases, the output power of the load device 42 gradually rises, and the transistor controller 41 stops moving toward J. Each MOSFET sends the control level, and all MOSFETs can be alternately turned on periodically.
需要说明的是, 为在图 4 中测得流经电感线圈的电流 iu, 可以设 置一个与电感线圈串联的检测电阻, 通过测量所述检测电阻两端的电 压,根据公式: 电流 =电压 /电阻,得到流经所述电感线圈的电流的数值; 也可以测量并联的 P沟道型 M0SFET的电压, 并算出导通状态下流经 P 沟道型 M0SFET的电流, 即电流 iuIt should be noted that, in order to measure the current i u flowing through the inductor coil in FIG. 4, a detecting resistor connected in series with the inductor coil may be provided, and the voltage across the detecting resistor is measured according to the formula: current=voltage/resistance The value of the current flowing through the inductor coil is obtained. The voltage of the parallel P-channel MOSFET can also be measured, and the current flowing through the P-channel MOSFET in the on state, that is, the current i u can be calculated.
所述 DC-DC 转换电路可以是将输入直流电压转换为电压值更低的 输出直流电压的 BUCK型电路, 也可以是将输入直流电压转换为电压值 更高的输出直流电压的 BOOST型电路。 BOOST型电路可以分为同步整流 BOOST型电路和非同步整流 BOOST型电路。 下面分别以图 5和图 6为例 进行说明。  The DC-DC conversion circuit may be a BUCK type circuit that converts an input DC voltage into an output DC voltage having a lower voltage value, or a BOOST type circuit that converts an input DC voltage into an output DC voltage having a higher voltage value. The BOOST type circuit can be divided into a synchronous rectification BOOST type circuit and a non-synchronous rectification BOOST type circuit. The following description will be made by taking FIG. 5 and FIG. 6 as an example.
图 5是一种同步整流 BOOST型的 DC-DC转换电路。 其中并联有 R 个 P沟道型 M0SFET, 还并联有 S ( R > 2, S > 2 ) 个 N沟道型 M0SFET。 晶体管控制器 51 通过控制 M0SFET周期性的进行开启、 关闭, 实现 N 沟道型 M0SFET和 P沟道型 M0SFET的交替导通。在图 5中, 为了实现对 DC-DC转换电路的效率的提高, 晶体管控制器 51通过对流经电感线圈 L2的电流 iu的检测, 对部分 M0SFET发出控制电平, 以使其处于截止状 态。 可以假设有 S。 ( S。 < R + S ) 个 M0SFET接收到所述控制电平而处 于长时间的截止状态, 不再进行周期性开启、 关闭动作。 对于选择哪些Fig. 5 is a synchronous rectification BOOST type DC-DC conversion circuit. There are R P-channel MOSFETs connected in parallel, and S (R > 2, S > 2) N-channel MOSFETs are also connected in parallel. The transistor controller 51 alternately turns on the N-channel type MOSFET and the P-channel type MOSFET by controlling the MOSFET to be turned on and off periodically. In FIG. 5, in order to improve the efficiency of the DC-DC conversion circuit, the transistor controller 51 issues a control level to a portion of the MOSFET by detecting the current i u flowing through the inductor L 2 to be turned off. . It can be assumed that there is S. (S. < R + S ) MOSFETs receive the control level In the long-term cut-off state, periodic opening and closing operations are no longer performed. For which ones to choose
M0SFET作为接收控制电平的 M0SFET, 可以预先进行设定, 相关描述可 参考前文对于图 3的同步整流 BUCK型 DC-DC转换电路的描述。 The MOSFET is used as the MOSFET receiving control level, which can be set in advance. For related description, refer to the previous description of the synchronous rectification BUCK DC-DC converter circuit of Figure 3.
随着流过负载设备 52的电流增大,负载设备 52的输出功率逐渐回 升, 晶体管控制器 51停止向所述部分 M0SFET发送所述控制电平,全部 M0SFET都可以进行周期性的交替导通。  As the current flowing through the load device 52 increases, the output power of the load device 52 gradually rises, and the transistor controller 51 stops transmitting the control level to the portion of the MOSFET, and all of the MOSFETs can be periodically alternately turned on.
需要说明的是, 为在图 5 中测得流经电感线圈的电流 iu, 可以设 置一个与电感线圈串联的检测电阻, 通过测量所述检测电阻两端的电 压,根据公式: 电流 =电压 /电阻,得到流经所述电感线圈的电流的数值; 也可以分别测量并联的 N沟道型 M0SFET、 P沟道型 M0SFET的电压, 并 根据并联的 M0SFET的等效电阻, 算出导通状态下流经 M0SFET的电流, 即电 iu。  It should be noted that, in order to measure the current iu flowing through the inductor coil in FIG. 5, a detecting resistor connected in series with the inductor coil may be provided, and the voltage across the detecting resistor is measured according to the formula: current=voltage/resistance, Obtaining the value of the current flowing through the inductor coil; respectively, measuring the voltages of the parallel N-channel type MOSFET and the P-channel type MOSFET, and calculating the conduction current through the MOSFET according to the equivalent resistance of the parallel MOSFET Current, ie electricity iu.
图 6是一种非同步整流 BOOST型的 DC-DC转换电路。 其中并联有 X ( X> 2 ) 个 N沟道型 M0SFET, 电路中设置有二极管 DlD 晶体管控制器 61控制 N沟道型 M0SFET周期性的进行开启、 关闭动作, 从而周期性的 处于导通状态和截止状态。 当 N 沟道型 M0SFET 受到晶体管控制器 61 的控制处于导通状态时, 二级管 0处于截止状态, 当 N沟道型 M0SFET 受到晶体管控制器 61的控制处于截止状态时,二极管 01处于导通状态。 此种电路中没有部署 P沟道型 M0SFET。 为了实现对 DC-DC转换电路的 效率的提高, 晶体管控制器 61 通过对流经电感线圈 L3的电流 的检 测, 对部分 N沟道型 M0SFET发出控制电平, 以使其处于截止状态。 可 以假设有 X。 ( Xo<X ) 个 M0SFET接收到所述控制电平而处于长时间的截 止状态, 不再进行周期性开启、 关闭动作, 从而减少 M0SFET的栅极电 容的充放电损耗, 提高了 DC-DC转换电路的效率。 Fig. 6 is a non-synchronous rectification BOOST type DC-DC conversion circuit. There are X ( X > 2 ) N-channel type MOSFETs connected in parallel, and a diode D lD transistor controller 61 is arranged in the circuit to control the N-channel type MOSFET to periodically turn on and off, thereby being periodically turned on. And cutoff status. When the N-channel type MOSFET is in the on state by the control of the transistor controller 61, the diode 0 is in the off state, and when the N-channel type MOSFET is in the off state by the control of the transistor controller 61, the diode 0 1 is in the conducting state. Pass state. A P-channel MOSFET is not deployed in such a circuit. In order to achieve an improvement in the efficiency of the DC-DC converter circuit, the transistor controller 61 issues a control level to a portion of the N-channel type MOSFET by detecting the current flowing through the inductor L 3 to be in an off state. It can be assumed that there is X. (Xo<X) MOSFETs receive the control level and are in a long-term off state, no longer periodically turn on and off, thereby reducing the charge and discharge loss of the gate capacitance of the MOSFET and improving the DC-DC conversion. The efficiency of the circuit.
随着流过负载设备 62的电流增大,负载设备 62的输出功率逐渐回 升, 晶体管控制器 61 停止向 X。个 M0SFET 发送所述控制电平,全部 M0SFET都可以进行周期性的交替导通。  As the current flowing through the load device 62 increases, the output power of the load device 62 gradually rises, and the transistor controller 61 stops moving toward X. Each MOSFET sends the control level, and all MOSFETs can be alternately turned on periodically.
需要说明的是, 为在图 6 中测得流经电感线圈的电流 iu, 可以设 置一个与电感线圈串联的检测电阻, 通过测量所述检测电阻两端的电 压,根据公式: 电流 =电压 /电阻,得到流经所述电感线圈的电流的数值; 也可以测量并联的 N沟道型 M0SFET的电压, 并算出导通状态下流经 P 沟道型 M0SFET的电流, 即电流 iu。 同步整流 BUCK型、 非同步整流 BUCK型、 同步整流 BOO ST型、 非同 步整流 BOOST型等四种 DC-DC转换电路,都可以根据不同的应用场景下 对效率的不同要求,预先设置需要接收所述控制电平的 M0 SFET的数量, 相关描述可参考前文对图 3的同步整流 BUCK型 DC-DC转换电路的描述, 此处不再贅述。 It should be noted that, in order to measure the current iu flowing through the inductor coil in FIG. 6, a detecting resistor connected in series with the inductor coil may be provided, and the voltage across the detecting resistor is measured according to the formula: current=voltage/resistance, The value of the current flowing through the inductor coil is obtained. The voltage of the parallel N-channel MOSFET can also be measured, and the current flowing through the P-channel MOSFET in the on state, that is, the current i u can be calculated. Four kinds of DC-DC conversion circuits, such as synchronous rectification BUCK type, asynchronous rectification BUCK type, synchronous rectification BOO ST type, and asynchronous rectification BOOST type, can be preset according to different requirements of efficiency in different application scenarios. For the description of the number of control level M0 SFETs, refer to the foregoing description of the synchronous rectification BUCK type DC-DC conversion circuit of FIG. 3, and details are not described herein again.
此外, 本发明实施例还提供了一种 DC-DC转换电路控制装置,如图 7所示, 所述装置包括: 电平控制单元 7 1、 电流检测单元 72。  In addition, the embodiment of the present invention further provides a DC-DC conversion circuit control device. As shown in FIG. 7, the device includes: a level control unit 7.1 and a current detecting unit 72.
电平控制单元 7 1 用于按照预定周期对 DC-DC 转换电路中的多个 M0SFET场效应晶体管进行导通及截止的控制;  The level control unit 7 1 is for controlling the on and off of the plurality of MOSFET field effect transistors in the DC-DC conversion circuit in accordance with a predetermined period;
电流检测单元 72用于在按照预定周期导通以及截止 DC-DC转换电 路中的多个 M0S FET场效应晶体管的同时, 检测流经所述 DC-DC转换电 路中的用于能量存储与释放的电感线圈的电流;  The current detecting unit 72 is configured to detect, during the predetermined period of turning on and off the plurality of MOSFET FETs in the DC-DC conversion circuit, the energy storage and release flowing through the DC-DC conversion circuit. Current of the inductor coil;
所述电平控制单元还用于在所述流经电感线圈的电流低于预设的 电流下限阈值时, 向所述多个 M0S FET 场效应晶体管中的部分 M0SFET 场效应晶体管的栅极输送控制电平, 以使得所述部分 M0 SFET场效应晶 体管持续处于截止状态, 而不再按照预定周期导通。  The level control unit is further configured to control a gate of a portion of the MOSFET field effect transistors in the plurality of MOSFET FETs when the current flowing through the inductor is lower than a preset lower current threshold The level is such that the portion of the M0 SFET field effect transistor is continuously turned off and is no longer turned on for a predetermined period.
从电路结构来看, 长时间处于截止状态的所述部分 M0SFET相当于 已经从 DC-DC转换电路中脱离。 由于在电路中减少了 M0SFET的数量, 相应的也减少了 M0 SFET以所述预定周期进行开启、 关闭动作的次数, 从而降低了 M0SFET频繁开启、 关闭时栅极电容的充放电损耗。  From the circuit configuration, the portion of the MOSFET that is in the off state for a long time is equivalent to having been detached from the DC-DC conversion circuit. Since the number of MOSFETs is reduced in the circuit, the number of times the M0 SFET is turned on and off in the predetermined period is also reduced, thereby reducing the charge and discharge loss of the gate capacitance when the MOSFET is frequently turned on and off.
进一步的, 电平控制单元 7 1还用于当流经所述电感线圈的电流高 于电流上限阈值时, 停止输送所述控制电平, 以使得所述部分 M0S FET 场效应晶体管继续按照预定周期导通和截止。  Further, the level control unit 71 is further configured to stop transmitting the control level when the current flowing through the inductor coil is higher than a current upper limit threshold, so that the part of the MOSFET FET continues to follow a predetermined period Turn-on and turn-off.
在停止输送所述控制电平后, 所述部分 M0S FET的栅极和源极间出 现电压差, 从而可以重新处于导通状态。 此后, DC-DC 转换电路中的 晶体管控制器可以继续以所述预定周期对所述部分 M 0 S F E T进行开启、 关闭控制。  After the supply of the control level is stopped, a voltage difference occurs between the gate and the source of the partial MOSFET, so that it can be turned back on. Thereafter, the transistor controller in the DC-DC conversion circuit can continue to turn on and off the portion M 0 S F E T at the predetermined period.
本发明实施例所述的装置可以应用于同步整流 BUCK型、 非同步整 流 BUCK型、 同步整流 BOOST型、 非同步整流 BOOST型等四种 DC-DC转 换电路,具体描述可参见上文对图 3至图 6的相关说明,此处不再贅述。  The device according to the embodiment of the invention can be applied to four DC-DC conversion circuits, such as a synchronous rectification BUCK type, an asynchronous rectification BUCK type, a synchronous rectification BOOST type, and an asynchronous rectification BOOST type. For details, refer to FIG. 3 above. The related description to FIG. 6 will not be repeated here.
实际应用中, 可以如图 8所示, 所述装置的和电平控制单元 7 1、 电流检测单元 72都集成到 DC-DC转换电路的晶体管控制器 81中。当然, 电流检测单元 71 和电平控制单元 72也可以独立设置在晶体管控制器 81之外, 分别与需要各个 MOSFET的栅极连接。 所述装置集成到 DC-DC 转换电路的晶体管控制器 81 中是一种优选的方案, 但本发明实施例对 此不做限定。 图 8是以非同步整流 BUCK型 DC-DC转换电路为例进行说 明, 当然, 也可以是同步整流 BUCK型、 同步整流 BOOST型、 非同步整 流 BOOST型 DC-DC转换电路的任意一种, 本发明实施例不再贅述。 In practical applications, as shown in FIG. 8, the sum control unit of the device and the level control unit 7 The current detecting unit 72 is integrated into the transistor controller 81 of the DC-DC converting circuit. Of course, the current detecting unit 71 and the level controlling unit 72 may also be independently disposed outside the transistor controller 81, and respectively connected to the gates of the respective MOSFETs. The device is integrated into the transistor controller 81 of the DC-DC conversion circuit, which is a preferred solution, but the embodiment of the invention does not limit this. 8 is an example of a non-synchronous rectification BUCK type DC-DC conversion circuit. Of course, it may be any one of a synchronous rectification BUCK type, a synchronous rectification BOOST type, and a non-synchronous rectification BOOST type DC-DC conversion circuit. The embodiments of the invention are not described again.
本发明实施例提供的提高 DC-DC 转换电路的效率的方法和 DC-DC 转换电路控制装置, 通过检测电感线圈中的电流, 并在电感线圈的电流 低于预设的电流下限阈值时对部分 MOSFET输送控制点电平, 使得所述 部分 MOSFET处于截止状态, 避免了所述部分 MOSFET在周期性的开启、 关闭动作中造成的栅极电容充放电损耗,从而提升了轻载状态下 DC-DC 转换电路的效率。  The method for improving the efficiency of a DC-DC conversion circuit and the DC-DC conversion circuit control device provided by the embodiments of the present invention, by detecting the current in the inductor coil, and when the current of the inductor coil is lower than a preset current lower limit threshold The MOSFET delivers a control point level, so that the part of the MOSFET is in an off state, which avoids the gate capacitance charge and discharge loss caused by the partial MOSFET during the periodic opening and closing operations, thereby improving the DC-DC under light load conditions. The efficiency of the conversion circuit.
通过以上的实施方式的描述, 所属领域的技术人员可以清楚地了 解到本发明可借助软件加必需的通用硬件的方式来实现,当然也可以通 过硬件, 但很多情况下前者是更佳的实施方式。 基于这样的理解, 本发 明的技术方案本质上或者说对现有技术做出贡献的部分可以以软件产 品的形式体现出来, 该计算机软件产品存储在可读取的存储介质中,如 计算机的软盘,硬盘或光盘等, 包括若干指令用以使得一台计算机设备 (可以是个人计算机, 服务器, 或者网络设备等)执行本发明各个实施 例所述的方法。  Through the description of the above embodiments, those skilled in the art can clearly understand that the present invention can be implemented by means of software plus necessary general hardware, and of course, by hardware, but in many cases, the former is a better implementation. . Based on such understanding, the technical solution of the present invention, which is essential or contributes to the prior art, may be embodied in the form of a software product stored in a readable storage medium, such as a floppy disk of a computer. A hard disk or optical disk, etc., includes instructions for causing a computer device (which may be a personal computer, server, or network device, etc.) to perform the methods described in various embodiments of the present invention.
以上所述, 仅为本发明的具体实施方式, 但本发明的保护范围并 不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围 内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。 因此, 本发明的保护范围应所述以权利要求的保护范围为准。  The above is only the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention. It should be covered by the scope of the present invention. Therefore, the scope of the invention should be determined by the scope of the claims.

Claims

权利 要求 书 Claim
1、 一种提高 DC-DC转换电路的效率的方法, 其特征在于, 包括: 在按照预定周期导通以及截止 DC-DC转换电路中的多个 MOSFET场效 应晶体管的同时, 检测流经所述 DC-DC 转换电路中的用于能量存储与释 放的电感线圈的电流; What is claimed is: 1. A method of improving efficiency of a DC-DC conversion circuit, comprising: detecting and flowing through said plurality of MOSFET field effect transistors in a DC-DC conversion circuit in accordance with a predetermined period a current for an energy storage and release inductor in a DC-DC conversion circuit;
所述流经电感线圈的电流低于预设的电流下限阈值时, 向所述多个 MOSFET 场效应晶体管中的部分 MOSFET 场效应晶体管的栅极输送控制电 平, 以使得所述部分 MOSFET场效应晶体管持续处于截止状态, 而不再按 照预定周期导通。  Transmitting a control level to a gate of a portion of the plurality of MOSFET field effect transistors to cause the portion of the MOSFET field effect when the current flowing through the inductor is lower than a predetermined lower current threshold The transistor is continuously turned off and is no longer turned on for a predetermined period.
2、 根据权利要求 1所述的方法, 其特征在于, 还包括:  2. The method according to claim 1, further comprising:
当流经所述电感线圈的电流高于预设的电流上限阈值时, 停止输送 所述控制电平, 以使得所述部分 MO S F E T场效应晶体管继续按照预定周期 导通和截止。  When the current flowing through the inductor coil is higher than a preset current upper threshold, the supply of the control level is stopped, so that the portion of the MO S F E T field effect transistor continues to be turned on and off according to a predetermined period.
3、 根据权利要求 1或 2所述的方法, 其特征在于, 所述方法可以用 于 BUCK型和 BOOST型 DC-DC转换电路。  3. Method according to claim 1 or 2, characterized in that the method can be used for BUCK type and BOOST type DC-DC conversion circuits.
4、 一种 DC-DC转换电路控制装置, 其特征在于, 所述装置包括: 电平控制单元 ,用于按照预定周期对 DC-DC转换电路中的多个 MOSFET 场效应晶体管进行导通及截止的控制;  A DC-DC conversion circuit control device, comprising: a level control unit for turning on and off a plurality of MOSFET field effect transistors in a DC-DC conversion circuit according to a predetermined period; control;
电流检测单元, 用于在按照预定周期导通以及截止 DC-DC 转换电路 中的多个 MOSFET场效应晶体管的同时, 检测流经所述 DC-DC转换电路中 的用于能量存储与释放的电感线圈的电流;  a current detecting unit, configured to detect an inductance flowing through the DC-DC conversion circuit for energy storage and release while turning on and off a plurality of MOSFET field effect transistors in the DC-DC conversion circuit according to a predetermined period Current of the coil;
所述电平控制单元还用于在所述流经电感线圈的电流低于预设的电 流下限阈值时, 向所述多个 MOSFET场效应晶体管中的部分 MOSFET场效 应晶体管的栅极输送控制电平, 以使得所述部分 MOSFET场效应晶体管持 续处于截止状态, 而不再按照预定周期导通。  The level control unit is further configured to: when the current flowing through the inductor is lower than a preset current lower threshold, transmit control power to a gate of a portion of the plurality of MOSFET field effect transistors Flat, so that the portion of the MOSFET field effect transistor is continuously turned off, and is no longer turned on according to a predetermined period.
5、 根据权利要求 4所述的装置, 其特征在于, 所述电平控制单元还 用于当流经所述电感线圈的电流高于预设的电流上限阈值时, 停止输送 所述控制电平, 以使得所述部分 MO S F E T场效应晶体管继续按照预定周期 导通和截止。  The device according to claim 4, wherein the level control unit is further configured to stop conveying the control level when a current flowing through the inductor coil is higher than a preset current upper limit threshold. So that the portion of the MO SFET field effect transistor continues to turn on and off at a predetermined period.
6、 根据权利要求 4或 5所述的装置, 其特征在于, 所述装置可以用 于 BUCK型和 BOOST型 DC-DC转换电路, 6. Apparatus according to claim 4 or claim 5 wherein said apparatus is operable For BUCK type and BOOST type DC-DC conversion circuits,
PCT/CN2011/076907 2011-07-06 2011-07-06 Method for improving efficiency of dc-dc conversion circuit and control apparatus for dc-dc conversion circuit WO2012106870A1 (en)

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