WO2012103666A1 - Quantum dot solar cells with interface layer and manufacturing method thereof - Google Patents

Quantum dot solar cells with interface layer and manufacturing method thereof Download PDF

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Publication number
WO2012103666A1
WO2012103666A1 PCT/CN2011/000171 CN2011000171W WO2012103666A1 WO 2012103666 A1 WO2012103666 A1 WO 2012103666A1 CN 2011000171 W CN2011000171 W CN 2011000171W WO 2012103666 A1 WO2012103666 A1 WO 2012103666A1
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Prior art keywords
layer
quantum dot
solar cell
conductor layer
interface
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PCT/CN2011/000171
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French (fr)
Inventor
Linan Zhao
Anna Liu
Zhi Zheng
Marilyn Wang
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Honeywell International Inc.
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Priority to PCT/CN2011/000171 priority Critical patent/WO2012103666A1/en
Publication of WO2012103666A1 publication Critical patent/WO2012103666A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots

Definitions

  • the disclosure relates generally to solar cells. More particularly, the disclosure relates to quantum dot solar cells.
  • An example solar cell may include an electron conductor layer, with a quantum dot layer electrically coupled to the electron conductor layer.
  • a hole conductor layer may be electrically coupled to the quantum dot layer.
  • An interface layer may be disposed along an interface between the hole conductor layer and the quantum dot layer. The interface layer may provide an energy barrier that discourages electrons from moving from the quantum dot layer to the hole conductor layer, while allowing electrons to more easily move from the hole conductor layer to the quantum dot layer.
  • the interface layer may be a surface passivation layer, and may include, for example, fluoride ions and/or ammonium ions.
  • the interface layer may include a blocking shell layer, and may include, for example, NH 4 F and/or ZnS.
  • Figure 2 is a graph showing absorbance over a range of wavelengths for example solar cells manufactured with 2, 3, 4, and 5 NH 4 F treatment cycles;
  • Figure 3 is a graph showing conversion efficiency for example solar cells manufactured with 2, 3, and 4 NH 4 F treatment cycles.
  • layer as used herein should be read to include a layer of material even when a two or three-dimensional intermingling or interpenetration of the layer has occurred with an adjacent layer, unless the content clearly dictates otherwise.
  • An interface layer 22 may be disposed between quantum dot layer 16 and the hole conductor layer 18 (and/or between quantum dot layer 16 and electrode 20).
  • interface layer 22 may include a surface passivation layer and/or a modification of the surface of quantum dot layer 16.
  • fluoride ions (F " ), ammonium ions (NH 4 + ), or both may be disposed along an interface or junction between quantum dot layer 16 and the hole conductor layer 18.
  • the interface layer 22 may provide an energy barrier that discourages electrons from moving from the quantum dot layer 16 to the hole conductor layer 18, while allowing electrons to move more easily (sometimes relatively freely) from the hole conductor layer 18 to the quantum dot layer 16, as needed. It is believed that the inclusion of interface layer 22 may enhance the current density (e.g., short-circuit current density J sc ) and/or potential (e.g., open circuit potential V oc ) of solar cell 10.
  • current density e.g., short-circuit current density J sc
  • potential

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Solar cells and methods for manufacturing solar cells are disclosed. An example solar cell (10) may include an electron conductor layer (14), with a quantum dot layer (16) electrically coupled to the electron conductor layer. A hole conductor layer (18) may be electrically coupled to the quantum dot layer. An interface layer (22) may be disposed along an interface between the hole conductor layer and the quantum dot layer. The interface layer may provide an energy barrier that discourages electrons from moving from the quantum dot layer to the hole conductor layer, while allowing electrons to more easily move from the hole conductor layer to the quantum dot layer.

Description

QUANTUM DOT SOLAR CELLS WITH INTERFACE LAYER
AND MANUFACTURING METHOD THEREOF
Technical Field
The disclosure relates generally to solar cells. More particularly, the disclosure relates to quantum dot solar cells.
Background
A wide variety of solar cells have been developed for converting sunlight into electricity. Of the known solar cells, each has certain advantages and disadvantages. There is an ongoing need to provide alternative solar cells as well as alternative methods for manufacturing solar cells.
Summary
The disclosure relates generally to solar cells and methods for manufacturing solar cells. An example solar cell may include an electron conductor layer, with a quantum dot layer electrically coupled to the electron conductor layer. A hole conductor layer may be electrically coupled to the quantum dot layer. An interface layer may be disposed along an interface between the hole conductor layer and the quantum dot layer. The interface layer may provide an energy barrier that discourages electrons from moving from the quantum dot layer to the hole conductor layer, while allowing electrons to more easily move from the hole conductor layer to the quantum dot layer. In some instances, the interface layer may be a surface passivation layer, and may include, for example, fluoride ions and/or ammonium ions. In some cases, the interface layer may include a blocking shell layer, and may include, for example, NH4F and/or ZnS.
However, these are just some examples.
The above summary is not intended to describe each and every disclosed embodiment or every implementation of the disclosure. The Figures and Description which follow more particularly exemplifies various examples.
Brief Description of the Drawings
The following description should be read with reference to the drawings. The drawings, which are not necessarily to scale, depict selected illustrative embodiments, and are not intended to limit the scope of the disclosure. The disclosure may be more completely understood in consideration of the following description of various embodiments in connection with the accompanying drawings, in which:
Figure 1 is a schematic cross-sectional side view of an illustrative solar cell;
Figure 2 is a graph showing absorbance over a range of wavelengths for example solar cells manufactured with 2, 3, 4, and 5 NH4F treatment cycles; and
Figure 3 is a graph showing conversion efficiency for example solar cells manufactured with 2, 3, and 4 NH4F treatment cycles.
While the disclosure is amenable to various modifications and alternative forms, specifics thereof have been shown by way of example in the drawing and will be described in detail. It should be understood, however, that the intention is not to limit the disclosure to the particular embodiments or examples described. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the disclosure. Description
The following description should be read with reference to the drawings in which similar elements in different drawings are numbered the same. The drawings, which are not necessarily to scale, depict certain illustrative embodiments and are not intended to limit the scope of the disclosure.
For the following defined terms, these definitions shall be applied, unless a different definition is given in the claims or elsewhere in this specification.
All numeric values are herein assumed to be modified by the term "about," whether or not explicitly indicated. The term "about" generally refers to a range of numbers that one of skill in the art would consider equivalent to the recited value (i.e., having the same function or result). In many instances, the terms "about" may include numbers that are rounded to the nearest significant figure.
The recitation of numerical ranges by endpoints includes all numbers within that range (e.g. 1 to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, and 5).
As used in this specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the content clearly dictates otherwise. As used in this specification and the appended claims, the term "or" is generally employed in its sense including "and/or" unless the content clearly dictates otherwise.
The term "layer" as used herein should be read to include a layer of material even when a two or three-dimensional intermingling or interpenetration of the layer has occurred with an adjacent layer, unless the content clearly dictates otherwise.
A wide variety of solar cells (which also may be known as photovoltaics and/or photovoltaic cells) have been developed for converting sunlight into electricity. Some example solar cells include a layer of crystalline silicon. Second and third generation solar cells often utilize a thin film of photovoltaic material (e.g., a "thin" film) deposited or otherwise provided on a substrate. These solar cells may be categorized according to the photovoltaic material deposited. For example, inorganic thin-film photovoltaics may include a thin film of amorphous silicon, microcrystalline silicon, CdS, CdTe, Cu2S, copper indium diselenide (CIS), copper indium gallium diselenide (CIGS), etc. Organic thin-film photovoltaics may include a thin film of a polymer or polymers, bulk heterojunctions, ordered heterojunctions, a fullerence, a polymer/fullerence blend, photosynthetic materials, etc. These are only examples.
Figure 1 is a schematic cross-sectional side view of an illustrative solar cell 10. In the illustrative embodiment, solar cell 10 includes a substrate or first electrode (e.g., an anode or negative electrode) 12. An electron conductor layer 14 may be electrically coupled to or otherwise disposed on electrode 12. In some embodiments, electron conductor layer 14 may include or be formed to take the form of a structured pattern or array, such as a mesoporous film, a structured nanomaterials or other structured pattern or array, as desired. The structured nanomaterials may include clusters or arrays of nanospheres, nanotubes, nanorods, nanowires, nano inverse opals or any other suitable nanomaterials, as desired. In some cases, a mesoporous film may be formed that includes particles with an average particle size of between 10-300 nanometers, but this is not required. In some cases, the mesoporous film may take the form of an inverse-opal pattern and/or any other suitable structured nanocomponents, such as disclosed in co-pending US Patent Application Serial No. 12/777,748, filed May 1 1 , 2010, and entitled "Composite Electron Conductor For Use In Photovoltaic Devices", which is incorporated herein by reference.
A quantum dot layer 16 is shown electrically coupled to and/or otherwise disposed on electron conductor layer 14. In at least some embodiments, quantum dot layer 16 may be disposed over and even "fill in" the structured pattern or array of electron conductor layer 14. For example, in embodiments where electron conductor layer 14 is a mesoporous film, quantum dot layer 16 may be deposited onto one or more surfaces (e.g., along the inner surface) of the mesoporous film. A hole conductor layer 18 may be electrically coupled to or otherwise disposed on or adjacent to quantum dot layer 16. In at least some embodiments, hole conductor layer 18 may include an electrolyte solution, but this is not required. Solar cell 10 may also include a second electrode 20 (e.g., a cathode or positive electrode) that is electrically coupled to one or more of hole conductor layer 18 and/or quantum dot layer 16.
An interface layer 22 may be disposed between quantum dot layer 16 and the hole conductor layer 18 (and/or between quantum dot layer 16 and electrode 20). In at least some embodiments, interface layer 22 may include a surface passivation layer and/or a modification of the surface of quantum dot layer 16. For example, fluoride ions (F"), ammonium ions (NH4 +), or both may be disposed along an interface or junction between quantum dot layer 16 and the hole conductor layer 18. In some instances, the interface layer 22 may provide an energy barrier that discourages electrons from moving from the quantum dot layer 16 to the hole conductor layer 18, while allowing electrons to move more easily (sometimes relatively freely) from the hole conductor layer 18 to the quantum dot layer 16, as needed. It is believed that the inclusion of interface layer 22 may enhance the current density (e.g., short-circuit current density Jsc) and/or potential (e.g., open circuit potential Voc) of solar cell 10.
In some of these and in other embodiments, interface layer 22 may (or may also) take the form of a blocking shell layer. The blocking shell layer may be disposed between quantum dot layer 16 and hole conductor layer 18 (e.g., electrolyte solution), as shown in Figure 1. The blocking shell layer may include NH4F, which may react with quantum dot layer 16 (e.g., free Cd ions that may be present along Cd-based quantum dots) to form a CdF2, for example, blocking shell. Alternatively, the blocking shell layer may include ZnS, or any other suitable material. In these examples, the blocking shell layer may be formed by alternatively dipping (e.g., twice dipping) electrode 12 (including electron conductor layer 14 and/or quantum dot layer 16) into aqueous solutions of Zn(CH3COO)2 and Na2S. Other materials may also be used including other ammonium salts, NH4C1, (NH4)2S, other ionic fluoride compounds and/or salts, chalcogenide salts, and/or the like. Other surface treatments are also contemplated for forming interface layer 22. For example, beam evaporation of a chalcogenide salt (e.g., ZnSe, ZnS, etc.) along the interface between quantum dot layer 16 and hole conductor layer 18 (e.g., electrolyte solution), which may also enhance the current density (e.g., short-circuit current density Jsc) and/or potential (e.g., open circuit potential Voc) of solar cell 10.
Substrate/electrode 12 may be made from any suitable material including, for example, polymers, glass, and/or transparent materials. In one example, substrate 12 may include polyethylene terephthalate, polyimide, low-iron glass, fluorine-doped tin oxide, indium tin oxide, Al-doped zinc oxide, transparent conductive oxide coated glass, any other suitable conductive inorganic element(s) or compound(s), conductive polymer(s), platinum, and other electrically conductive materials, combinations thereof, and/or any other suitable materials.
Electron conductor layer 14 may be formed of any suitable material or material combination. In some instances, electron conductor layer 14 may be an n-type electron conductor. The electron conductor layer 14 may be metallic, such as Ti02 or ZnO. In some cases, electron conductor layer 14 may be an electrically conducting polymer, such as a polymer that has been doped to be electrically conducting or to improve its electrical conductivity.
As indicated above, in at least some embodiments, electron conductor layer 14 may be formed or otherwise include a structured pattern or array of, for example, nanoparticles. This may include screen printing electron conductor layer 14 on electrode 12 (and may or may not include disposing a compact Ti02 blocking layer on electrode 12 prior to screen printing to prevent unwanted charge transfer). In at least some embodiments, electron conductor layer 14 may include a plurality of nanoparticles such as nanospheres or the like with relatively large average outer particle dimensions (e.g. diameters). In one illustrative embodiment, the electron conductor layer 14 of solar cell 10 may include Ti02 particles with an average particle outer diameter of about 10-300 nanometers, 25- 100 nanometers, 25-45 nanometers, about 30-40 nanometers, or about 37 nanometers. When so configured, electron conductor layer 14 may allow for easier infiltration of quantum dot layer 16 onto electron conductor layer 14, and/or may a reduced interfacial area with electrolyte solution 18, which may reduce electron-hole recombination and improve the energy conversion efficiency of solar cell 10.
In some embodiments, quantum dot layer 16 may include one quantum dot or a plurality of quantum dots. Quantum dots are typically very small semiconductors, having dimensions in the nanometer range. Because of their small size, quantum dots may exhibit quantum behavior that is distinct from what would otherwise be expected from a larger sample of the material. In some cases, quantum dots may be considered as being crystals composed of materials from Groups II- VI, III-V, or IV-VI materials. The quantum dots employed herein may be formed using any appropriate technique. Examples of specific pairs of materials for forming quantum dots include, but are not limited to, MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS, SrSe, SrTe, BaO, BaS, BaSe, BaTe, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, A1203, A12S3, Al2Se3, Al2Te3> Ga203; Ga2S3> Ga2Se3, Ga2Te3> ln203j In2S3i In2Se3; In2Te3; Si02, Ge02> Sn02; SnS, SnSe, SnTe, PbO, Pb02, PbS, PbSe, PbTe, AIN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs and InSb.
Quantum dot layer 16 may be deposited onto electron conductor layer 14 using any suitable method. For example, chemical bath deposition (CBD) may be used to deposit quantum dot layer 16. This may include the use of a CBD solution of the quantum dot material, heating, and CBD deposition over time (e.g., in the range of about 200-280 minutes).
In some embodiments, solar cell 10 may include a bifunctional ligand layer (not shown) that may help couple quantum dot layer 16 with electron conductor layer 14 and/or interface layer 22. At least some of the bifunctional ligands within the bifunctional ligand layer may be considered as including electron conductor and/or interface layer 22 anchors, which may bond to electron conductor layer 14 and/or interface layer 22, and quantum dot anchors that may bond to individual quantum dots within quantum dot layer 16. A wide variety of bifunctional ligand layers are contemplated for use with the solar cells disclosed herein.
Hole conductor layer 18 may be considered as being coupled to quantum dot layer 16. In some cases, two layers may be considered as being coupled if one or more molecules or other moieties within one layer are bonded or otherwise secured to one or more molecules within another layer. In some instances, coupling may merely infer the potential passage of electrons from one layer to the next (e.g. in at least one direction).
Hole conductor layer 18 may be formed of any suitable material or material combination. For example, hole conductor layer 18 may be a p-type conductor. In some cases, hole conductor layer 18 may include a conductive polymer, but this is not required. In some cases, the conductive polymer may include a monomer that has an alkyl chain that terminates in a second quantum dot anchor. The conductive polymer may, for example, be or otherwise include a polythiophene that is functionalized with a moiety that bonds to quantum dots. In some the polythiophene may be functionalized with a thio or thioether moiety.
An illustrative but non-limiting example of a suitable conductive polymer has
Figure imgf000008_0001
as a repeating unit, where R is absent or alkyl and m is an integer ranging from about 6 to 12.
Another illustrative but non-limiting example of a suitable conductive polymer has
Figure imgf000008_0002
as a repeating unit, where R is absent or alkyl.
Another illustrative but non-limiting example of a suitable conductive polymer has
Figure imgf000008_0003
as a repeating unit, where R is absent or alkyl.
Another illustrative but non-limiting example of a suitable conductive polymer has
Figure imgf000008_0004
as a repeating unit, where R is absent or alkyl.
In some instances, hole conductor layer 18 may include an electrolyte solution, an electrolyte material, sulfur-based materials or electrolytes, Na2S, sulfur or sulfide compounds or salts, sulfur-based electrolytic gels, ionic liquids, spiro-OMeTAD (2,20,7,70-tetrakis-(N,N-di-p- methoxyphenylamine)9,90-spirobifluorene), poly-3-hexylthiophen (P3HT), and/or the like. It is contemplated that forming such a hole conductor layer 18 may include providing a material (e.g., a sulfur-based material in liquid form) for forming hole conductor layer 18. A mixture of, for example, de-ionized water and a low surface tension solvent (e.g., methanol) may be used as a solvent for the hole conductor layer 18 material. In one specific example, the hole conductor layer 18 may include a sulfur-based liquid hole conductor material mixed in a low surface tension solvent, where the low surface tension solvent is a mixture that includes water and methanol (e.g., in a 1 : 1 ratio). The low surface tension solvent may have a better affinity with the electron conductor layer 14 (e.g., Ti02), which may help inhibit adsorption of H20 on the Ti02 surface, and may reduce electron-hole recombination and improve the overall efficiency of solar cell 10.
In at least some embodiments, the hole conductor layer 18 may be enhanced, by the addition of an electrolytic salt. For example, an electrolytic salt (e.g., KC1, NaF, etc.) may be added to the hole conductor layer material as an additive during manufacture. It is believed that the addition of such an electrolytic salt may reduce the internal electrical resistance of the hole conductor layer 18, and may thus improve the overall efficiency of solar cell 10.
Examples
The disclosure may be further clarified by reference to the following examples, which serve to exemplify some illustrative embodiments, and are not meant to be limiting in any way.
Example 1
A number of solar cells components were manufactured. The manufacturing process included providing an electrode 12 having a microstructured Ti02 electron conductor layer 14 disposed thereon. The electron conductor layer 14 was about 2.32 microns thick.
A chemical bath deposition (CBD) process was used to deposit a quantum dot layer 16 onto the electron conductor layer 14. In this example, the CBD solution was a 26.7 mM solution of CdSe. The pH of the solution was 10.5. The CBD process included heating the CBD solution to 30°C. The CBD deposition time was 200-280 minutes.
After the quantum dot layer 16 was formed, an interface layer 22 was deposited onto or otherwise formed along the quantum dot layer. To do so, and in this example, a 1M NH4F solution was prepared by dissolving 1.85g of NH4F in 50ml of deionized water. The electrode 12 (having electron conductor layer 14 and quantum dot layer 16 formed thereon) was immersed in the solution for 3 minutes. After immersion, the electrode 12 was removed, washed three times with deionized water, and dried in air for 15 minutes. The combination of the immersion, washing, and drying steps formed a single "cycle" of NH4F treatment, which deposited the interface layer 22 onto the quantum dot layer 16. A total of one to five of such "cycles" of NH4F treatment were performed to deposit the interface layer 22 on quantum dot layer 16.
A second electrode 20 (sputtered platinum about 100 nm thick) was attached to the (first) electrode 12 using a sealing ring. The spacing between the two electrodes was about 60 microns. An electrolyte solution 18 was injected between the electrodes 12 and 20 (e.g., between the quantum dot layer 16 and the second electrode 20). The electrolyte solution included 1M Na2S, 0.1M S, and 0.2M KC1 in a 1 : 1 methanol/water solvent.
A summary of the characteristics of some of the solar cell components prepared as described above, along with the specific number of NH4F treatment cycles and total CBD treatment times, are listed in Table 1 below.
Table 1 : Properties of Example Solar Cells
Figure imgf000010_0001
Open circuit voltage in volts
2 Short circuit current density 3 Fill factor
4 Series resistance at 0.8 V
A number of observations can be made from the data presented in Table 1. For example, the fill factor increased and the series resistance at 0.8 V increased when the number of NH4F treatment cycles increased from 2 to 3 cycles. It is believed that this may be due to surface passivation and/or modification of the quantum dot layer 16.
Too many NH4F treatment cycles (e.g., 4 NH4F treatment cycles) may create a thicker blocking shell layer, which may increase the series resistance, decrease the fill factor, and reduce the efficiency. In addition, the greater number of NH4F treatment cycles utilized (e.g., the absorbance after two NH F treatment cycles is generally greater than the absorbance after three NH4F treatment cycles, which is generally greater than the absorbance after four NH4F treatment cycles, which is generally greater than the absorbance after five NH4F treatment cycles) generally may decrease the absorbance, as shown graphically in Figure 2. Collectively, the data appears to indicate that the conversion efficiency is greatest in the example solar cell components with three NH4F treatment cycles, as best shown in Figure 3.
Example 2
A number of solar cells may also be manufactured in a manner similar to what is described in Example 1 , except that the interface layer may be formed by dipping the electrode 12 (having electron conductor layer 14 and quantum dot layer 16 formed thereon) into a 0.1M Zn(CH3COO)2 solution (aqueous) for 1 minute and then into a Na2S solution (aqueous) for 1 minute. This dipping may be repeated a second time to form a ZnS shell interface layer 22.
This disclosure should not be considered limited to the particular examples described herein, but rather should be understood to cover all aspects of the disclosure as set out in the attached claims. Various modifications, equivalent processes, as well as numerous structures to which the disclosure can be applicable will be readily apparent to those of skill in the art upon review of the instant specification. In the present specification, some of the matter may be of a hypothetical or prophetic in nature although stated in another manner or tense.
What is claimed is:

Claims

1. A solar cell, comprising:
an electron conductor layer;
a quantum dot layer electrically coupled to the electron conductor layer;
a hole conductor layer electrically coupled to the quantum dot layer; and
an interface layer disposed along an interface between the hole conductor layer and the quantum dot layer, the interface layer providing an energy barrier that discourages electrons from moving from the quantum dot layer to the hole conductor layer, while allowing electrons to more easily move from the hole conductor layer to the quantum dot layer.
2. The solar cell of claim 1, wherein the electron conductor layer includes Ti02.
3. The solar cell of claim 1 , wherein the electron conductor layer includes ZnO.
4. The solar cell of claim 1 , wherein the electron conductor layer has a
microstructured surface.
5. The solar cell of claim 1 , wherein the quantum dot layer includes a plurality of quantum dots.
6. The solar cell of claim 5, wherein the quantum dot layer includes a plurality of CdSe quantum dots.
7. The solar cell of claim 1 , wherein the interface layer is a surface passivation layer formed on the quantum dot layer.
8. The solar cell of claim 7, wherein the surface passivation layer includes fluoride ions.
9. The solar cell of claim 7, wherein the surface passivation layer includes ammonium ions.
10. The solar cell of claim 1 , wherein the interface layer includes a blocking shell layer.
1 1. The solar cell of claim 10, wherein the blocking shell layer includes ZnS.
12. The solar cell of claim 1 , wherein the hole conductor layer includes an electrolyte solution.
13. A solar cell, comprising:
a first electrode;
an electron conductor layer coupled to the first electrode, the electron conductor layer having a microstructured surface;
a quantum dot layer electrically coupled to the electron conductor layer;
an electrolyte solution electrically coupled to the quantum dot layer;
a second electrode electrically coupled to the electrolyte solution; and
an interface layer disposed along an interface between the electrolyte solution and the quantum dot layer, the interface layer providing an energy barrier that discourages electrons from moving from the quantum dot layer to the electrolyte solution, while allowing electrons to more easily move from the electrolyte solution to the quantum dot layer.
14. The solar cell of claim 13, wherein the electron conductor layer includes one or more of Ti02 and ZnO.
15. The solar cell of claim 13, wherein the quantum dot layer includes a plurality of CdSe quantum dots.
16. The solar cell of claim 13, wherein the interface layer is a surface passivation layer formed on the quantum dot layer.
17. The solar cell of claim 13, wherein the interface layer includes fluoride ions.
18. The solar cell of claim 13, wherein the interface layer includes ammonium ions.
19. The solar cell of claim 13, wherein the interface layer includes ZnS.
20. A method for manufacturing a solar cell, the method comprising:
providing an electron conductor layer;
providing a quantum dot layer; and
forming an interface layer along the quantum dot layer, the interface layer providing an energy barrier that discourages electrons from moving from the quantum dot layer to a hole conductor layer, while allowing electrons to more easily move from the hole conductor layer to the quantum dot layer.
PCT/CN2011/000171 2011-01-31 2011-01-31 Quantum dot solar cells with interface layer and manufacturing method thereof WO2012103666A1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114815A (en) * 2004-10-18 2006-04-27 Fujitsu Ltd Solar cell
US20090095349A1 (en) * 2007-10-10 2009-04-16 Forrest Stephen R Type ii quantum dot solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006114815A (en) * 2004-10-18 2006-04-27 Fujitsu Ltd Solar cell
US20090095349A1 (en) * 2007-10-10 2009-04-16 Forrest Stephen R Type ii quantum dot solar cells

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