WO2012102454A1 - Solar cell and method for manufacturing the same - Google Patents
Solar cell and method for manufacturing the same Download PDFInfo
- Publication number
- WO2012102454A1 WO2012102454A1 PCT/KR2011/007404 KR2011007404W WO2012102454A1 WO 2012102454 A1 WO2012102454 A1 WO 2012102454A1 KR 2011007404 W KR2011007404 W KR 2011007404W WO 2012102454 A1 WO2012102454 A1 WO 2012102454A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- solar cell
- oxidation
- support substrate
- reflective layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 51
- 230000003647 oxidation Effects 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims 2
- 239000007769 metal material Substances 0.000 claims 1
- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 description 10
- 239000011669 selenium Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- the embodiment relates to a solar cell and a method for manufacturing the same.
- a CIGS-based solar cell has been extensively used, in which the CIGS-based solar cell is a PN hetero junction device having a support substrate structure including a glass support substrate, a metallic back electrode layer, a P type CIGS-based light absorbing layer, a buffer layer, and an N type transparent electrode layer.
- the embodiment provides a solar cell having photoelectric conversion efficiency and a method for manufacturing the same.
- a solar cell includes a support substrate, a reflective layer on the support substrate, an oxidation layer formed on the reflective layer and including a material a same as a material of the reflective layer, a back electrode layer on the oxidation layer, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, and a window layer on the buffer layer.
- a method for manufacturing a solar cell includes forming a reflective layer on a support substrate including metal, forming an oxidation layer by oxidizing an upper portion of the reflective layer, forming a back electrode layer on the oxidation layer, forming a light absorbing layer on the back electrode layer, forming a buffer layer on the light absorbing layer, and forming a window layer on the buffer layer.
- the reflective layer is formed on the support substrate, and the oxidation layer is formed by oxidizing the top surface of the reflective layer. Accordingly, the reliability and the photoelectric conversion efficiency of the solar cell can be improved.
- FIG. 1 is a sectional view showing a solar cell according to the embodiment.
- FIGS. 2 to 5 are sectional views showing the method for manufacturing the solar cell according to the embodiment.
- FIG. 1 is a sectional view showing a solar cell according to the embodiment.
- the solar cell according to the embodiment includes a support substrate 100, a reflective layer 200 on the support substrate 100, an oxidation layer 250 on the reflective layer 200, a back electrode layer 300 on the oxidation layer 250, a light absorbing layer 400 on the back electrode layer 300, a buffer layer 500 on the light absorbing layer 400, and a window layer 600 on the buffer layer 500.
- the support substrate 100 has a plate shape to support the reflective layer 200, the oxidation layer 250, the back electrode layer 300, the light absorbing layer 400, the buffer layer 500, and the window layer 600.
- the support substrate 100 may include an insulator.
- the support substrate 100 may be transparent.
- the support substrate 100 may be rigid or flexible.
- the support substrate 100 may include metal.
- the support substrate 100 may include a material selected from the group consisting of iron (Fe), nickel (Ni), and chrome (Cr).
- the support substrate 100 may be transparent, and rigid or flexible.
- the support substrate 100 When the support substrate 100 includes metal, the support substrate 100 requires production cost less than that of a support substrate including glass, so that an advantageous economical effect can be obtained. In addition, the support substrate 100 is flexible, so that the support substrate 100 has an advantage in terms of portability.
- the support substrate 100 includes metal
- metallic ions contained in the support substrate 100 may be diffused to the upper layer. Accordingly, the electrical characteristic of the solar cell may be degraded.
- the ions contained in the support substrate 100 can be prevented from being diffused upward by forming the oxidation layer 250.
- the oxidation layer 250 may serve as an anti-diffusion layer.
- the photoelectric conversion efficiency can be improved.
- the reflective layer 200 may include silicon oxide (SiO x ) or alumina (Al 2 O 3 ). In addition, the reflective layer 200 may be used as a hetero junction layer.
- the hetero junction layer including Ti/SiO x is used as the reflective layer 200, since a material such as SiOx is deposited after Ti has been deposited, the number of the processes is increased. Accordingly, the productivity must be improved.
- the reflective layer 200 is oxidized to form the oxidation layer 250. Accordingly, the convenience can be improved in the manufacturing process.
- the reflective layer 200 may include a material constituting an oxidation film.
- the reflective layer 200 may include a material selected from the group consisting of tantalum (Ta), tungsten (W), aluminum (Al), magnesium (Mg), neodymium (Nd), zirconia, beryllium (Be), and titan (Ti).
- the reflective layer 200 reflects a light, which is incident to the support substrate 100 through the light absorbing layer 400, to the light absorbing layer 400, so that the photoelectric conversion efficiency of the solar cell can be improved.
- the reflective layer 200 has a thickness of about 10nm or less, the reflectance of a light passing through the light absorbing layer 400 may be reduced. If the reflective layer 200 has a thickness of about 5000nm or more, the reduction in the size of the device may be difficult. Accordingly, the reflective layer 200 may preferably have a thickness of about 10nm to abut 5000nm.
- the thickness of the reflective layer 200 may be more reduced from an initial thickness through an oxidation treatment.
- the sum of the thicknesses of the reflective layer 200 and the oxidation layer 250 after the oxidation treatment has been performed may be greater than the thickness of the reflective layer 200 before the oxidation treatment is performed.
- the oxidation layer 250 may lengthen the path of ions contained in the support substrate 100 at the high temperature, and can prevent the ions of the support substrate 100 from diffusing upward beyond the back electrode layer 300 because the oxidation layer 250 has ionic bonds and covalent bonds.
- the thickness of the oxidation layer 250 formed through the oxidation treatment becomes 5% or less of the initial thickness of the reflective layer 200, ions contained in the support substrate 100 are less prevented from being diffused upward beyond the back electrode layer 300. If the thickness of the oxidation layer 250 becomes at least 80% of the initial thickness of the reflective layer 200, the reflection effect of the reflection layer 200 may be reduced. Accordingly, the thickness of the oxidation layer 250 preferably becomes in the range of 5% to 80% of the initial thickness of the reflective layer 200.
- the back electrode layer 300 may be formed on the oxidation layer 250.
- the back electrode layer 300 is a conductive layer.
- the back electrode layer 300 moves charges generated from the light absorbing layer 400 of the solar cell, so that current can flow to the outside of the solar cell.
- the back electrode layer 300 must represent high electrical conductivity and low resistivity in order to perform the above function.
- the back electrode layer 300 must maintain stability in the high temperature condition when heat treatment is performed under sulfur (S) or selenium (Se) atmosphere as a CIGS compound is formed.
- the back electrode layer 300 may include a material selected from the group consisting of Mo, Ni, Au, Al, Cr, W and Cu.
- Mo overall satisfies the characteristics required for the back electrode layer 300.
- the back electrode layer 300 may include at least two layers.
- the layers may include the same metal or different metals.
- the light absorbing layer 400 may be formed on the back electrode layer 300.
- the light absorbing layer 400 includes a P type semiconductor compound.
- the light absorbing layer 400 includes group I-III-VI compounds.
- the light absorbing layer 400 may have a Cu-In-Ga-Se-based crystal structure (Cu(In,Ga)Se 2 ;CIGS), a Cu-In-Se-based crystal structure, or a Cu-Ga-Se based crystal structure.
- the energy band gap of the light absorbing layer 400 may be in the range of about 1eV to about 1.8eV.
- the buffer layer 500 may be formed on the light absorbing layer 400.
- the solar cell including a CIGS compound constituting the light absorbing layer 400 forms a PN junction between a CIGS compound, which constitutes a P type semiconductor, and a window layer 600 which constitutes an N type semiconductor.
- a buffer layer having intermediate band gap between the band gaps of the two materials is required in order to form a superior junction.
- the buffer layer 500 includes CdS or ZnS, and the CdS represents more improved generating efficiency of the solar cell.
- a CdS thin film is an N type semiconductor, and may be doped with In, Ga, or Al to obtain a low resistance value.
- the window layer 600 may be formed on the buffer layer 500.
- the window layer 600 is transparent and serves as a conductive layer.
- the window layer 600 includes an oxide material.
- the window layer 600 may include zinc oxide, indium tin oxide (ITO) or indium zinc oxide (IZO).
- the oxide material may include conductive impurities such as Al, Al 2 O 3 , Mg or Ga.
- the window layer 600 may include Al doped zinc oxide (AZO) or Ga doped zinc oxide (GZO).
- the photoelectric conversion efficiency can be improved.
- ions contained in the support substrate 100 can be prevented from being diffused to the upper layer by the oxidation layer 250, so that the reliability for the solar cell can be improved.
- the oxidation layer 250 is formed by performing the oxidation treatment with respect to the upper portion of the reflective layer 200. Accordingly, the convenience in the manufacturing process is increased, so that the productivity can be improved.
- FIGS. 2 to 5 are sectional views showing the method for manufacturing the solar cell according to the embodiment.
- the details of the method for manufacturing the solar cell will be given based on the description about the solar cell.
- the description about the solar cell can be intrinsically matched with the description about the method for manufacturing the solar cell.
- the reflective layer 200 may be formed on the support substrate 100.
- the reflective layer 200 may be formed through a sputtering scheme or a vacuum evaporation scheme.
- the oxidation layer 250 may be formed on the upper portion of the reflective layer 200.
- the oxidation layer 250 may be formed by performing an oxidation treatment with respect to the upper portion of the reflective layer 200.
- the oxidation layer 250 may include an oxide of the reflective layer 200.
- the oxidation treatment may be performed through a PEO (plasma-electrolyte oxidization) scheme or an ED (electro deposition) scheme.
- PEO plasma-electrolyte oxidization
- ED electro deposition
- the thickness of the oxidation layer 250 formed through the oxidation treatment may be formed in the range of about 5% to about 80% of the thickness of the reflective layer 200.
- the sum of the thicknesses of the reflective layer 200 and the oxidation layer 250 after the oxidation treatment has been performed may be greater than the thickness of the reflective layer 200 before the oxidation treatment is performed.
- the back electrode layer 300 may be formed on the oxidation layer 250.
- the back electrode layer 300 may be formed through a PVD (Physical Vapor Deposition) scheme or a plating scheme by using Mo.
- the light absorbing layer 400 may be formed on the back electrode layer 300.
- the light absorbing layer 400 may be formed through various schemes such as a scheme of forming a Cu(In,Ga)Se2 (CIGS) based-light absorbing layer 400 by simultaneously evaporating Cu, In, Ga, and Se, or by separately evaporating Cu, In, Ga, and Se and a scheme of performing a selenization process after a metallic precursor film has been formed.
- CGS Cu(In,Ga)Se2
- the metallic precursor layer is formed on the back electrode layer 300 through a sputtering process employing a Cu target, an In target, or a Ga target.
- the buffer layer 500 may be formed on the light absorbing layer 400.
- the buffer layer 500 may be formed by depositing cadmium sulfide through a sputtering process or a CBD (chemical bath deposition) scheme.
- the window layer 600 may be formed on the buffer layer 500.
- the window layer 600 may be formed through a CVD process or a sputtering process.
- the solar cell having improved photoelectric conversion efficiency improved by the reflective layer 200 can be provided.
- ions contained in the support substrate 100 can be prevented from being diffused to the upper layer by the oxidation layer 250. Accordingly, the reliability of the solar cell can be improved.
- Oxidation treatment is performed with respect to the upper portion of the oxidation layer 200, so that the convenience in the manufacturing process and the productivity can be improved.
- any reference in this specification to “one embodiment,” “an embodiment,” “example embodiment,” etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
- the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
- A solar cell comprising:a support substrate;a reflective layer on the support substrate;an oxidation layer formed on the reflective layer and including a material a same as a material of the reflective layer;a back electrode layer on the oxidation layer;a light absorbing layer on the back electrode layer;a buffer layer on the light absorbing layer; anda window layer on the buffer layer.
- The solar cell of claim 1, wherein the reflective layer includes at least one selected from the group consisting of tantalum (Ta), tungsten (W), aluminum (Al), magnesium (Mg), neodymium (Nd), zirconia, titan (Ti), and beryllium (Be).
- The solar cell of claim 1, wherein the reflective layer has a thickness in a range of about 10nm to about 5000nm.
- The solar cell of claim 3, wherein the oxidation layer has a thickness in a range of about 5% to about 80% based on the thickness of the reflective layer.
- The solar cell of claim 1, wherein the support substrate includes at least one of iron (Fe), nickel (Ni), and chromium (Cr).
- The solar cell of claim 1, wherein the back electrode layer includes a metallic material and is prepared as a multiple layers.
- A method for manufacturing a solar cell, the method comprising:forming a reflective layer on a support substrate including metal;forming an oxidation layer by oxidizing an upper portion of the reflective layer;forming a back electrode layer on the oxidation layer;forming a light absorbing layer on the back electrode layer;forming a buffer layer on the light absorbing layer; andforming a window layer on the buffer layer.
- The method of claim 7, wherein the oxidation layer is formed on the reflective layer through a PEO (plasma-electrolyte oxidization) scheme or an ED (electro deposition) scheme.
- The method of claim 7, wherein the reflective layer includes at least one selected from the group consisting of tantalum (Ta), tungsten (W), aluminum (Al), magnesium (Mg), neodymium (Nd), zirconia, titan (Ti), and beryllium (Be).
- The method of claim 7, wherein the oxidation layer has a thickness in a range of about 5% to about 80% based on a thickness of the reflective layer.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180031533.0A CN102959735B (en) | 2011-01-25 | 2011-10-06 | Solar cell and manufacture method thereof |
EP11856637A EP2534704A1 (en) | 2011-01-25 | 2011-10-06 | Solar cell and method for manufacturing the same |
JP2013550374A JP2014503129A (en) | 2011-01-25 | 2011-10-06 | Solar cell and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0007514 | 2011-01-25 | ||
KR1020110007514A KR101134730B1 (en) | 2011-01-25 | 2011-01-25 | Solar cell apparatus and method of fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012102454A1 true WO2012102454A1 (en) | 2012-08-02 |
Family
ID=46143452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/KR2011/007404 WO2012102454A1 (en) | 2011-01-25 | 2011-10-06 | Solar cell and method for manufacturing the same |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2534704A1 (en) |
JP (1) | JP2014503129A (en) |
KR (1) | KR101134730B1 (en) |
CN (1) | CN102959735B (en) |
WO (1) | WO2012102454A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101634075B1 (en) * | 2014-12-19 | 2016-06-28 | 주식회사 포스코 | Solar cell |
US20220238747A1 (en) | 2021-01-28 | 2022-07-28 | Solaero Technologies Corp. | Inverted metamorphic multijunction solar cell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060180200A1 (en) * | 2003-05-08 | 2006-08-17 | Charlotte Platzer Bjorkman | Thin-film solar cell |
KR20090034078A (en) * | 2007-10-02 | 2009-04-07 | 엘지전자 주식회사 | Tandem thin film solar cell and fabrication method thereof |
US20090120492A1 (en) * | 2007-11-09 | 2009-05-14 | Ashok Sinha | Low-cost solar cells and methods for their production |
US20100154872A1 (en) * | 2008-12-23 | 2010-06-24 | Jun Gug-Il | Solar cell and method of fabricating the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7629661B2 (en) | 2006-02-10 | 2009-12-08 | Noble Peak Vision Corp. | Semiconductor devices with photoresponsive components and metal silicide light blocking structures |
US20080295884A1 (en) * | 2007-05-29 | 2008-12-04 | Sharma Pramod K | Method of making a photovoltaic device or front substrate with barrier layer for use in same and resulting product |
JP4974986B2 (en) | 2007-09-28 | 2012-07-11 | 富士フイルム株式会社 | Solar cell substrate and solar cell |
US20100139753A1 (en) * | 2008-12-05 | 2010-06-10 | Applied Materials, Inc. | Semiconductor device and method of producing a semiconductor device |
-
2011
- 2011-01-25 KR KR1020110007514A patent/KR101134730B1/en not_active IP Right Cessation
- 2011-10-06 JP JP2013550374A patent/JP2014503129A/en active Pending
- 2011-10-06 CN CN201180031533.0A patent/CN102959735B/en not_active Expired - Fee Related
- 2011-10-06 WO PCT/KR2011/007404 patent/WO2012102454A1/en active Application Filing
- 2011-10-06 EP EP11856637A patent/EP2534704A1/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060180200A1 (en) * | 2003-05-08 | 2006-08-17 | Charlotte Platzer Bjorkman | Thin-film solar cell |
KR20090034078A (en) * | 2007-10-02 | 2009-04-07 | 엘지전자 주식회사 | Tandem thin film solar cell and fabrication method thereof |
US20090120492A1 (en) * | 2007-11-09 | 2009-05-14 | Ashok Sinha | Low-cost solar cells and methods for their production |
US20100154872A1 (en) * | 2008-12-23 | 2010-06-24 | Jun Gug-Il | Solar cell and method of fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
CN102959735A (en) | 2013-03-06 |
CN102959735B (en) | 2015-09-23 |
KR101134730B1 (en) | 2012-04-19 |
EP2534704A1 (en) | 2012-12-19 |
JP2014503129A (en) | 2014-02-06 |
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