WO2012096534A3 - 고효율 정전류 회로 - Google Patents

고효율 정전류 회로 Download PDF

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Publication number
WO2012096534A3
WO2012096534A3 PCT/KR2012/000310 KR2012000310W WO2012096534A3 WO 2012096534 A3 WO2012096534 A3 WO 2012096534A3 KR 2012000310 W KR2012000310 W KR 2012000310W WO 2012096534 A3 WO2012096534 A3 WO 2012096534A3
Authority
WO
WIPO (PCT)
Prior art keywords
highly efficient
current circuit
efficient constant
constant
present
Prior art date
Application number
PCT/KR2012/000310
Other languages
English (en)
French (fr)
Other versions
WO2012096534A2 (ko
Inventor
김현탁
김봉준
곽선신
김준식
Original Assignee
한국전자통신연구원
동원시스템즈 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110116466A external-priority patent/KR101746462B1/ko
Application filed by 한국전자통신연구원, 동원시스템즈 주식회사 filed Critical 한국전자통신연구원
Priority to US13/824,993 priority Critical patent/US8866538B2/en
Publication of WO2012096534A2 publication Critical patent/WO2012096534A2/ko
Publication of WO2012096534A3 publication Critical patent/WO2012096534A3/ko

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30Driver circuits
    • H05B45/395Linear regulators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

본 발명은 열 폭주 현상을 방지할 수 있는 현탁 트랜지스터 (hyuntak Transistor)와 고증폭과 정전류를 가능하게 하는 보조 트랜지스터를 이용한 저발열 고효율 정전류 회로이다. 본 회로는 발광 다이오드 및 모터의 구동에 적용될 수 있다.
PCT/KR2012/000310 2011-01-13 2012-01-12 고효율 정전류 회로 WO2012096534A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/824,993 US8866538B2 (en) 2011-01-13 2012-01-12 Constant current circuit of high efficiency

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20110003519 2011-01-13
KR10-2011-0003519 2011-01-13
KR1020110116466A KR101746462B1 (ko) 2011-01-13 2011-11-09 고효율 정전류 회로
KR10-2011-0116466 2011-11-09

Publications (2)

Publication Number Publication Date
WO2012096534A2 WO2012096534A2 (ko) 2012-07-19
WO2012096534A3 true WO2012096534A3 (ko) 2012-12-06

Family

ID=46507588

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000310 WO2012096534A2 (ko) 2011-01-13 2012-01-12 고효율 정전류 회로

Country Status (1)

Country Link
WO (1) WO2012096534A2 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9281812B2 (en) * 2013-07-05 2016-03-08 Electronics And Telecommunications Research Institute MIT transistor system including critical current supply device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940003563Y1 (ko) * 1988-09-30 1994-05-27 주식회사 금성사 앰프단의 노이즈 피크 발생제거용 정전류 회로
KR980012844A (ko) * 1996-07-29 1998-04-30 기다오까 다까시 바이폴라 트랜지스터의 바이어스회로
KR0173942B1 (ko) * 1995-12-26 1999-04-01 김광호 정전류 절환 회로
KR20090091648A (ko) * 2008-02-25 2009-08-28 한국전자통신연구원 금속-절연체 전이(mit) 소자의 자체발열 방지회로 및 그방지회로용 집적소자의 제조방법
KR100964186B1 (ko) * 2007-11-12 2010-06-17 한국전자통신연구원 금속-절연체 전이(mit) 소자를 이용한 트랜지스터발열제어 회로 및 그 발열제어 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940003563Y1 (ko) * 1988-09-30 1994-05-27 주식회사 금성사 앰프단의 노이즈 피크 발생제거용 정전류 회로
KR0173942B1 (ko) * 1995-12-26 1999-04-01 김광호 정전류 절환 회로
KR980012844A (ko) * 1996-07-29 1998-04-30 기다오까 다까시 바이폴라 트랜지스터의 바이어스회로
KR100964186B1 (ko) * 2007-11-12 2010-06-17 한국전자통신연구원 금속-절연체 전이(mit) 소자를 이용한 트랜지스터발열제어 회로 및 그 발열제어 방법
KR20090091648A (ko) * 2008-02-25 2009-08-28 한국전자통신연구원 금속-절연체 전이(mit) 소자의 자체발열 방지회로 및 그방지회로용 집적소자의 제조방법

Also Published As

Publication number Publication date
WO2012096534A2 (ko) 2012-07-19

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