WO2012091851A3 - System and method for producing a mass analyzed ion beam - Google Patents

System and method for producing a mass analyzed ion beam Download PDF

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Publication number
WO2012091851A3
WO2012091851A3 PCT/US2011/063095 US2011063095W WO2012091851A3 WO 2012091851 A3 WO2012091851 A3 WO 2012091851A3 US 2011063095 W US2011063095 W US 2011063095W WO 2012091851 A3 WO2012091851 A3 WO 2012091851A3
Authority
WO
WIPO (PCT)
Prior art keywords
mass analysis
analysis plate
mass
beamlets
ion
Prior art date
Application number
PCT/US2011/063095
Other languages
French (fr)
Other versions
WO2012091851A2 (en
Inventor
Victor M. Benveniste
Frank Sinclair
Svetlana Radovanov
Bon Woong Koo
Original Assignee
Varian Semiconductor Equipment Associates, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates, Inc. filed Critical Varian Semiconductor Equipment Associates, Inc.
Publication of WO2012091851A2 publication Critical patent/WO2012091851A2/en
Publication of WO2012091851A3 publication Critical patent/WO2012091851A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/26—Mass spectrometers or separator tubes
    • H01J49/28—Static spectrometers
    • H01J49/30—Static spectrometers using magnetic analysers, e.g. Dempster spectrometer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/055—Arrangements for energy or mass analysis magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

An implantation system (100) includes an ion extraction plate (106) having a set of apertures configured to extract ions from an ion source (102) to form a plurality of beamlets (112). A magnetic analyzer (114) is configured to provide a magnetic field to deflect ions in the beamlets in a first direction x that is generally perpendicular to a principal axis zof the beamlets. A mass analysis plate (120) includes a set of apertures (122) wherein first ion species (118) having a first mass/charge ratio are transmitted through the mass analysis plate and second ion species (116) having a second mass/charge ratio are blocked by the mass analysis plate. Optionally, a workpiece holder (130) is configured to move with, respect to the mass analysis plate in a second direction y perpendicular to the first direction, wherein a pattern of ions (112a) transmitted through the mass analysis plate forms a continuous ion beam current along the first direction at the substrate (132).
PCT/US2011/063095 2010-12-29 2011-12-02 System and method for producing a mass analyzed ion beam WO2012091851A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/981,002 US20120168622A1 (en) 2010-12-29 2010-12-29 System and method for producing a mass analyzed ion beam
US12/981,002 2010-12-29

Publications (2)

Publication Number Publication Date
WO2012091851A2 WO2012091851A2 (en) 2012-07-05
WO2012091851A3 true WO2012091851A3 (en) 2012-08-30

Family

ID=45446179

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/063095 WO2012091851A2 (en) 2010-12-29 2011-12-02 System and method for producing a mass analyzed ion beam

Country Status (3)

Country Link
US (1) US20120168622A1 (en)
TW (1) TW201227796A (en)
WO (1) WO2012091851A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9024282B2 (en) * 2013-03-08 2015-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for high rate hydrogen implantation and co-implantion
TWI626675B (en) * 2014-03-05 2018-06-11 聯華電子股份有限公司 Mass slit module, ion implanter, operating method for the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05101806A (en) * 1991-02-18 1993-04-23 Nippon Telegr & Teleph Corp <Ntt> Mass separation device and separating method
JPH06162980A (en) * 1992-11-25 1994-06-10 Ishikawajima Harima Heavy Ind Co Ltd Ion source
US5825038A (en) * 1996-11-26 1998-10-20 Eaton Corporation Large area uniform ion beam formation
US20060219944A1 (en) * 2005-03-08 2006-10-05 Axcelis Technologies, Inc. Multichannel ion gun

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US20130001414A1 (en) * 2011-07-01 2013-01-03 Varian Semiconductor Equipment Associates, Inc. System and method for producing a mass analyzed ion beam for high throughput operation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05101806A (en) * 1991-02-18 1993-04-23 Nippon Telegr & Teleph Corp <Ntt> Mass separation device and separating method
JPH06162980A (en) * 1992-11-25 1994-06-10 Ishikawajima Harima Heavy Ind Co Ltd Ion source
US5825038A (en) * 1996-11-26 1998-10-20 Eaton Corporation Large area uniform ion beam formation
US20060219944A1 (en) * 2005-03-08 2006-10-05 Axcelis Technologies, Inc. Multichannel ion gun

Also Published As

Publication number Publication date
TW201227796A (en) 2012-07-01
WO2012091851A2 (en) 2012-07-05
US20120168622A1 (en) 2012-07-05

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