WO2012087075A3 - 레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품 - Google Patents

레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품 Download PDF

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Publication number
WO2012087075A3
WO2012087075A3 PCT/KR2011/010063 KR2011010063W WO2012087075A3 WO 2012087075 A3 WO2012087075 A3 WO 2012087075A3 KR 2011010063 W KR2011010063 W KR 2011010063W WO 2012087075 A3 WO2012087075 A3 WO 2012087075A3
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WO
WIPO (PCT)
Prior art keywords
fine pattern
transfer
transferred
article
large area
Prior art date
Application number
PCT/KR2011/010063
Other languages
English (en)
French (fr)
Other versions
WO2012087075A2 (ko
Inventor
이성호
김종석
강경태
이상호
Original Assignee
한국생산기술연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국생산기술연구원 filed Critical 한국생산기술연구원
Priority to JP2013546037A priority Critical patent/JP2014507790A/ja
Priority to DE112011104571T priority patent/DE112011104571T5/de
Publication of WO2012087075A2 publication Critical patent/WO2012087075A2/ko
Publication of WO2012087075A3 publication Critical patent/WO2012087075A3/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G03F7/346—Imagewise removal by selective transfer, e.g. peeling away using photosensitive materials other than non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

본 발명은 미세 패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품에 관한 것으로서, 보다 상세하게는 평면 구조의 기판 상부에 희생층 및 패턴형성층을 코팅시킨 다음 상기 코팅된 패턴형성층 상부에 미세 패턴을 대면적으로 형성시키고 상기 미세 패턴이 전사된 패턴형성층을 분리시켜 적용 대상 물품에 접착시킴으로써 미세 패턴을 비평면적으로 전사하는 방법 및 이를 이용하여 미세 패턴을 전사한 물품에 관한 것이다.
PCT/KR2011/010063 2010-12-24 2011-12-23 레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품 WO2012087075A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013546037A JP2014507790A (ja) 2010-12-24 2011-12-23 レーザ干渉リソグラフィを用いた大面積微細パターンの製作方法、前記方法を用いて製作された微細パターンの非平面的転写方法、及びそれを用いて微細パターンを転写した物品
DE112011104571T DE112011104571T5 (de) 2010-12-24 2011-12-23 Verfahren zum Ausbilden eines feinen Musters in einem großen Bereich unter Verwendung von Laser-Interferenz-Lithographie, Verfahren zum nicht-planaren Transfer des feinen Musters, ausgebildet durch das Verfahren und Artikel, an welchen das feine Muster durch das Transferverfahren transferiert ist

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0134870 2010-12-24
KR1020100134870A KR101385070B1 (ko) 2010-12-24 2010-12-24 레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품

Publications (2)

Publication Number Publication Date
WO2012087075A2 WO2012087075A2 (ko) 2012-06-28
WO2012087075A3 true WO2012087075A3 (ko) 2012-10-18

Family

ID=46314672

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/010063 WO2012087075A2 (ko) 2010-12-24 2011-12-23 레이저간섭 노광을 이용한 대면적 미세패턴 제작 방법, 상기 방법을 이용하여 제작된 미세패턴의 비평면적 전사 방법 및 이를 이용하여 미세 패턴을 전사한 물품

Country Status (4)

Country Link
JP (1) JP2014507790A (ko)
KR (1) KR101385070B1 (ko)
DE (1) DE112011104571T5 (ko)
WO (1) WO2012087075A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101959334B1 (ko) * 2013-01-09 2019-03-19 삼성전자주식회사 레이저 간섭 리소그래피를 이용한 나노 공진기 제작 장치 및 방법
KR102203701B1 (ko) * 2014-04-23 2021-01-18 한국생산기술연구원 나노입자 노출을 이용한 마이크로-나노 복합 패턴의 제조 방법 및 이를 이용한 도광판의 제조 방법
KR101689153B1 (ko) * 2015-01-28 2016-12-23 한국산업기술대학교 산학협력단 집속이온빔 적용 재전사가 가능한 나노 패턴 쉐도우 마스크 제조 방법 및 나노 패턴 쉐도우 마스크를 재사용하는 패턴 전사 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050075581A (ko) * 2004-01-16 2005-07-21 엘지전자 주식회사 나노 임프린트용 쿼츠 스템프 제작 방법
KR20050092980A (ko) * 2004-03-17 2005-09-23 엘지.필립스 엘시디 주식회사 인쇄롤의 패턴형성방법
JP2007318046A (ja) * 2006-05-29 2007-12-06 Kochi Univ Of Technology 転写方法
KR20100122872A (ko) * 2009-05-13 2010-11-23 한양대학교 산학협력단 표면 굴곡을 가지는 기판에 패턴을 형성하는 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360919B2 (ja) * 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
JP4389791B2 (ja) * 2004-08-25 2009-12-24 セイコーエプソン株式会社 微細構造体の製造方法および露光装置
JP4692136B2 (ja) * 2005-08-08 2011-06-01 東レ株式会社 感光性ペースト組成物およびそれを用いたフィールドエミッションディスプレイ部材
JP5177976B2 (ja) * 2005-08-31 2013-04-10 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050075581A (ko) * 2004-01-16 2005-07-21 엘지전자 주식회사 나노 임프린트용 쿼츠 스템프 제작 방법
KR20050092980A (ko) * 2004-03-17 2005-09-23 엘지.필립스 엘시디 주식회사 인쇄롤의 패턴형성방법
JP2007318046A (ja) * 2006-05-29 2007-12-06 Kochi Univ Of Technology 転写方法
KR20100122872A (ko) * 2009-05-13 2010-11-23 한양대학교 산학협력단 표면 굴곡을 가지는 기판에 패턴을 형성하는 방법

Also Published As

Publication number Publication date
KR20120072934A (ko) 2012-07-04
WO2012087075A2 (ko) 2012-06-28
DE112011104571T5 (de) 2013-09-26
JP2014507790A (ja) 2014-03-27
KR101385070B1 (ko) 2014-04-15

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