WO2012081965A1 - Condensateur interdigité et dispositif de détection à membrane diélectrique - Google Patents

Condensateur interdigité et dispositif de détection à membrane diélectrique Download PDF

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Publication number
WO2012081965A1
WO2012081965A1 PCT/MY2011/000149 MY2011000149W WO2012081965A1 WO 2012081965 A1 WO2012081965 A1 WO 2012081965A1 MY 2011000149 W MY2011000149 W MY 2011000149W WO 2012081965 A1 WO2012081965 A1 WO 2012081965A1
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WO
WIPO (PCT)
Prior art keywords
nanowires
fingers
insulating layer
depositing
substrate
Prior art date
Application number
PCT/MY2011/000149
Other languages
English (en)
Inventor
Chia Sheng Daniel Bien
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Publication of WO2012081965A1 publication Critical patent/WO2012081965A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/227—Sensors changing capacitance upon adsorption or absorption of fluid components, e.g. electrolyte-insulator-semiconductor sensors, MOS capacitors

Definitions

  • the present invention relates to a device for chemical sensing applications using interdigitated capacitive sensors and sensing membrane.
  • the physical structure of the device comprises of a sensing membrane sitting on top of an array of interdigitated fingers.
  • the sensing mechanism is based on the dielectric properties of membrane material which includes physical, chemical, or structural properties influencing the fringing electric field between the finger electrodes resulting in a change in capacitance.
  • US patent application 20100054299 discloses a sensor device for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer.
  • Another US patent application, US 20090084686 discloses a biosensor for detecting presence and concentration of various bio-materials such as genes and proteins using an interdigitated electrode sensor unit.
  • FIG. 1 shows a cross sectional view of a typical sensing device with only a top sensing membrane layer hence only utilising 50% of its fringing field effect.
  • the interdigitated electrodes (20) sit beneath a sensor membrane (32).
  • the utilised fringe electric field (102) is only on the top, where the sensor membrane is present. At the bottom side, the fringing electric field is not utilised (104).
  • the present invention aims at providing a device that fully utilises its fringing field effect by incorporating a second sensing membrane on the opposite side of the interdigitated electrode to the side with the first sensing membrane.
  • This invention relates to a dual sided MEMS interdigitated capacitive sensor with sensing membranes formed on both sides of the capacitive fingers.
  • a through substrate opening beneath the bottom sensing membrane allows for it to be in contact with the sensed ions.
  • Having sensing membranes on both sides of the interdigitated structures allows full utilisation of the fringing field of the capacitor device. The sensitivity and performance of the device will hence be significantly improved.
  • the suspended sensor device can be hinged onto the substrate at the contact pad areas or at part of the interdigitated fingers. As each half of the finger array is only connected to one pad, flexural rigidity of the overall structure is highly dependent on whether the sensing membrane is able to support the interdigitated structure.
  • the sensing membrane material can be of ferroelectric and piezoelectric materials such as barium strontium titanate (BST), lead zircornate titanate (PZT) and zinc oxide (ZnO), polymer material such polyimide, and metal oxides such as tin oxide (Sn0 2 ), tantalum pentoxide (Ta 2 0 5 ), aluminium oxide (Al 2 0 3 ), hafnium oxide (Hf0 2 ), and tungsten oxide (WO x ).
  • BST barium strontium titanate
  • PZT lead zircornate titanate
  • ZnO zinc oxide
  • polymer material such polyimide
  • metal oxides such as tin oxide (Sn0 2 ), tantalum pentoxide (Ta 2 0 5 ), aluminium oxide (Al 2 0 3 ), hafnium oxide (Hf0 2 ), and tungsten oxide (WO x ).
  • nanostructures such as nanotubes or nanowires can be used as the device's sensing membrane, comprising carbon nanotubes, silicon nanowires, tungsten nanowires, tungsten oxide nanowires, zinc oxide nanowires, indium oxide nanowires, tin oxide nanowires, gold nanowires. They can be grown using a thin metal catalyst material by a variety of methods including chemical vapour deposition (CVD), metalorganic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electrochemical deposition, solution chemical deposition.
  • CVD chemical vapour deposition
  • MOCVD metalorganic chemical vapour deposition
  • PECVD plasma enhanced chemical vapour deposition
  • HWCVD hot wire chemical vapour deposition
  • ALD atomic layer deposition
  • electrochemical deposition solution chemical deposition.
  • Catalyst materials used are typically gold (Au), cobalt (Co), iron (Fe), nickel (Ni), indium (In) and copper (Cu).
  • the interdigitated capacitor strcuture must be of a material that is able to withstand the high nanowire growth temperature, which is typically above 400°C. Such material includes gold, platinum, nickel, tungsten, cobalt and copper.
  • These nanowires or nanotubes can be of highly ordered vertical arrays or non-ordered multidirectional arrays covering both sides of the interdigitated finger surfaces allowing a dual sided device with high sensitivity.
  • the fabrication method is compatible to standard integrated circuit (IC) processing, allowing it to be integrated on the same platform as other MEMS or IC type devices and electronic systems.
  • IC integrated circuit
  • the present invention relates to a device for sensing ions comprising: a pair of electrodes, each electrode having a plurality fingers, said fingers arranged in an interdigitated manner in relation to each other; a bottom and a top sensor membrane sandwiching said pair of electrodes; and a substrate housing said sensor membranes, said substrate having an opening to allow said ions to come into contact with said sensor membranes.
  • a pair of contact pads is provided, each contact pad attached and in electrical connection with each electrode.
  • the sensor membranes are hinged to the substrate either at the contact pad or at the fingers, and are made from any or a combination of the following: ferroelectric and piezoelectric materials such as barium strontium titanate (BST), lead zircornate titanate (PZT) and zinc oxide (ZnO); polymer materials such as polyimide; and metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and tungsten oxide (WOx).
  • ferroelectric and piezoelectric materials such as barium strontium titanate (BST), lead zircornate titanate (PZT) and zinc oxide (ZnO); polymer materials such as polyimide; and metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and tungsten oxide (WOx).
  • the sensor membranes comprise a plurality of nanowires or nanotubes grown on or around the fingers, with an electrical insulating layer between said nanowires and said fingers.
  • the nanowires or nanotubes are made from any or a combination of the following: carbon nanotubes, silicon nanowires, tungsten nanowires, tungsten oxide nanowires, zinc oxide nanowires, indium oxide nanowires, tin oxide nanowires, and gold nanowires.
  • the nanowires or nanotubes may be either uni-directional or multi-directional.
  • the present invention also relates to a method of fabricating an ion sensor device comprising the steps of:
  • CF4 Tetrafluoromethane
  • CHF3 Trifluoromethane
  • HF hydrofluoric acid
  • ICP-RIE sulphur hexafluoride
  • SF6 sulphur hexafluoride
  • TMAH Tetramethylammonium Hydroxide
  • the said insulating layers are any or a combination of: silicon dioxide or silicon nitride deposited by physical or chemical vapour deposition; or silicon dioxide grown by a thermal oxidation method.
  • the sensor membranes are made from any or a combination of: ferroelectric and piezoelectric materials such as barium strontium titanate (BST), lead zircornate titanate (PZT) and zinc oxide (ZnO); polymer material such as polyimide; and metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and tungsten oxide (WOx).
  • BST barium strontium titanate
  • PZT lead zircornate titanate
  • ZnO zinc oxide
  • polymer material such as polyimide
  • metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and
  • the conductive layer includes any or a combination of the following materials: gold (Au), platinum (Pt), nickel (Ni), tungsten (W), cobalt (Co) and copper (Cu).
  • Au gold
  • Pt platinum
  • Ni nickel
  • W tungsten
  • Co cobalt
  • Cu copper
  • the present invention further relates to a method of fabricating an ion sensor device comprising the steps of :
  • CVD chemical vapour deposition
  • MOCVD metalorganic chemical vapour deposition
  • PECVD plasma enhanced chemical vapour deposition
  • HWCVD hot wire chemical vapour deposition
  • ALD atomic layer deposition
  • electrochemical deposition and solution chemical deposition.
  • Figure 1 shows a cross sectional view of a typical sensing device with only a top sensing membrane layer of a prior art.
  • Figure 2 shows a plan view of a sensor device in a first embodiment of this invention.
  • Figure 3 shows a plan view of a sensor device in a second embodiment of this invention.
  • Figure 4 shows a plan view of a sensor device in a third embodiment of this invention.
  • Figure 5 shows a cross sectional view of a sensor device in a third embodiment of this invention.
  • Figure 6 shows a cross sectional view of a sensor device in a fourth embodiment of this invention.
  • FIGS 7 (a) through (f) show stages in the fabrication process of first and second embodiments of this invention.
  • FIGS 8 (a) through (h) show stages in the fabrication process of third and fourth embodiments of this invention.
  • sensing device that fully utilises its fringing field effect by incorporating a second sensing membrane on the opposite side of the interdigitated electrode to the side with the first sensing membrane and the fabrication method thereof and is not limited to any particular size or configuration but in fact a multitude of sizes and configurations within the general scope of the following description.
  • a first and second embodiment of this invention and an ion sensor device comprising a pair of electrodes (10, 12), each electrode having a plurality fingers (20), said fingers arranged in an interdigitated manner in relation to each other; a bottom (30) and a top (32) sensor membrane sandwiching said pair of electrodes; and a substrate (40) housing said sensor membranes, said substrate having an opening to allow said ions to come into contact with said sensor membranes.
  • a pair of contact pads (50, 52) is provided, with each contact pad attached and in electrical connection with each electrode (10, 12).
  • the sensor membranes (30, 32) are hinged to the substrate at the contact pads (50, 52).
  • the sensor membranes (30, 32) are hinged to the substrate at the fingers (20).
  • the sensor membranes (30, 32) are made from any or a combination of the following: ferroelectric and piezoelectric materials such as barium strontium titanate (BST), lead zircornate titanate (PZT) and zinc oxide (ZnO); polymer materials such as polyimide; and metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and tungsten oxide (WOx).
  • ferroelectric and piezoelectric materials such as barium strontium titanate (BST), lead zircornate titanate (PZT) and zinc oxide (ZnO); polymer materials such as polyimide; and metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and tungsten oxide (WOx).
  • FIG. 4 and Figure 5 there is shown a third embodiment of this invention and an ion sensor device comprising a pair of electrodes (10, 12), each electrode having a plurality fingers (20), said fingers arranged in an interdigitated manner in relation to each other; a bottom (30) and a top (32) sensor membrane sandwiching said pair of electrodes; and a substrate (40) housing said sensor membranes, said substrate having an opening to allow said ions to come into contact with said sensor membranes.
  • a pair of contact pads (50, 52) is provided, with each contact pad attached and in electrical connection with each electrode (10, 12).
  • the sensor membranes comprise a plurality of nanowires or nanotubes (60) grown uni-directionally (601 ) on or around the fingers (20), with an electrical insulating layer (70) between said nanowires (60) and said fingers (20).
  • a fourth embodiment of this invention and an ion sensor device comprising a pair of electrodes, each electrode having a plurality fingers (20), said fingers arranged in an interdigitated manner in relation to each other; a bottom and a top sensor membrane sandwiching said pair of electrodes; and a substrate housing said sensor membranes, said substrate having an opening to allow said ions to come into contact with said sensor membranes.
  • a pair of contact pads is provided, with each contact pad attached and in electrical connection with each electrode.
  • the sensor membranes comprise a plurality of nanowires or nanotubes grown multi-directionally (602) on or around the fingers (20), with an electrical insulating layer (70) between said nanowires and said fingers (20).
  • the nanowires or nanotubes (60) of both the third and fourth embodiments of this invention are made from any or a combination of the following: carbon nanotubes, silicon nanowires, tungsten nanowires, tungsten oxide nanowires, zinc oxide nanowires, indium oxide nanowires, tin oxide nanowires, and gold nanowires.
  • the nanowires or nanotubes may be either uni-directional or multi-directional.
  • a conductive layer depositing and etching a conductive layer to form the interdigitated fingers (20) and contact pads (50, 52) on top of the said bottom sensor membrane (30), wherein the said deposition of said conductive layer is done using a physical or chemical vapour deposition (PVD or CVD) method and the said conductive layer includes any or a combination of the following materials: gold (Au), platinum (Pt), nickel (Ni), tungsten (W), cobalt (Co) and copper (Cu);
  • ICP-RIE inductively coupled plasma reactive ion etching
  • SF6 sulphur hexafluoride
  • TMAH Tetramethylammonium Hydroxide
  • the said sensor membranes (30, 32) is made from any or a combination of: ferroelectric and piezoelectric materials such as barium strontium titanate (BST), lead zircornate titanate (PZT) and zinc oxide (ZnO); polymer material such as polyimide; and metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and tungsten oxide (WOx).
  • BST barium strontium titanate
  • PZT lead zircornate titanate
  • ZnO zinc oxide
  • polymer material such as polyimide
  • metal oxides such as tin oxide (Sn02), tantalum pentoxide (Ta205), aluminium oxide (AI203), hafnium oxide (Hf02), and tungsten oxide (WOx).
  • nanotubes or nanowires 60) at the exposed metal catalyst areas, wherein the said nanotubes or nanowires are grown by any or a combination of the following methods: chemical vapour deposition (CVD); metalorganic chemical vapour deposition (MOCVD); plasma enhanced chemical vapour deposition (PECVD); hot wire chemical vapour deposition (HWCVD); atomic layer deposition (ALD); electrochemical deposition; and solution chemical deposition.
  • CVD chemical vapour deposition
  • MOCVD metalorganic chemical vapour deposition
  • PECVD plasma enhanced chemical vapour deposition
  • HWCVD hot wire chemical vapour deposition
  • ALD atomic layer deposition
  • electrochemical deposition and solution chemical deposition.
  • the overall capacitance of the device is determined by the dimensions and dielectric permittivity of the sensing membrane:

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un dispositif qui sert à détecter des ions et qui comprend : une paire d'électrodes, chaque électrode ayant une pluralité de doigts, lesdits doigts étant agencés de manière interdigitée l'un par rapport à l'autre; des membranes de capteur inférieure et supérieure qui mettent la paire d'électrodes en sandwich; et un substrat qui héberge lesdites membranes de capteur, ledit substrat comportant une ouverture pour permettre auxdits ions d'entrer en contact avec lesdites membranes de capteur. Une paire de pastilles de contact est également installée, chaque pastille de contact étant fixée et mise en connexion électrique avec chaque électrode. Les membranes de capteur peuvent comprendre une pluralité de nanofils ou de nanotubes développés sur ou autour des doigts, avec une couche électrique isolante entre lesdits nanofils et lesdits doigts.
PCT/MY2011/000149 2010-12-15 2011-06-24 Condensateur interdigité et dispositif de détection à membrane diélectrique WO2012081965A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI2010005998 2010-12-15
MYPI2010005998A MY174066A (en) 2010-12-15 2010-12-15 Interdigitated capacitor and dielectric membrane sensing device

Publications (1)

Publication Number Publication Date
WO2012081965A1 true WO2012081965A1 (fr) 2012-06-21

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160178605A1 (en) * 2015-03-03 2016-06-23 Mohammad Abdolahad Electrical Cell-substrate Impedance Sensor (ECIS)
US10259704B2 (en) 2016-04-07 2019-04-16 Regents Of The University Of Minnesota Nanopillar-based articles and methods of manufacture
CN112881487A (zh) * 2021-01-15 2021-06-01 北方工业大学 金叉指微型电化学传感器及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552655A (en) * 1994-05-04 1996-09-03 Trw Inc. Low frequency mechanical resonator
US20050067920A1 (en) * 2003-09-30 2005-03-31 Weinberg Marc S. Flexural plate wave sensor
US20070284699A1 (en) * 2006-04-21 2007-12-13 Bioscale, Inc. Microfabricated Devices and Method for Fabricating Microfabricated Devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552655A (en) * 1994-05-04 1996-09-03 Trw Inc. Low frequency mechanical resonator
US20050067920A1 (en) * 2003-09-30 2005-03-31 Weinberg Marc S. Flexural plate wave sensor
US20070284699A1 (en) * 2006-04-21 2007-12-13 Bioscale, Inc. Microfabricated Devices and Method for Fabricating Microfabricated Devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160178605A1 (en) * 2015-03-03 2016-06-23 Mohammad Abdolahad Electrical Cell-substrate Impedance Sensor (ECIS)
US10259704B2 (en) 2016-04-07 2019-04-16 Regents Of The University Of Minnesota Nanopillar-based articles and methods of manufacture
CN112881487A (zh) * 2021-01-15 2021-06-01 北方工业大学 金叉指微型电化学传感器及其制造方法

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Publication number Publication date
MY174066A (en) 2020-03-06

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