WO2012079747A1 - Procédé de préparation de motifs microstructurés de matériaux supraconducteurs - Google Patents
Procédé de préparation de motifs microstructurés de matériaux supraconducteurs Download PDFInfo
- Publication number
- WO2012079747A1 WO2012079747A1 PCT/EP2011/006302 EP2011006302W WO2012079747A1 WO 2012079747 A1 WO2012079747 A1 WO 2012079747A1 EP 2011006302 W EP2011006302 W EP 2011006302W WO 2012079747 A1 WO2012079747 A1 WO 2012079747A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pattern
- nanoparticles
- superconductive material
- suspension
- superconductive
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000002105 nanoparticle Substances 0.000 claims abstract description 19
- 239000000725 suspension Substances 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 239000002243 precursor Substances 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229920001169 thermoplastic Polymers 0.000 claims description 4
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- -1 polyethylene Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 229910020073 MgB2 Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N CuO Inorganic materials [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005049 combustion synthesis Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000750 Niobium-germanium Inorganic materials 0.000 description 1
- 239000006057 Non-nutritive feed additive Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
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- 238000004220 aggregation Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
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- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000007787 electrohydrodynamic spraying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
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- 230000020169 heat generation Effects 0.000 description 1
- 239000012760 heat stabilizer Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0352—Processes for depositing or forming copper oxide superconductor layers from a suspension or slurry, e.g. screen printing or doctor blade casting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
- G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
- G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
- G01R33/34—Constructional details, e.g. resonators, specially adapted to MR
- G01R33/34007—Manufacture of RF coils, e.g. using printed circuit board technology; additional hardware for providing mechanical support to the RF coil assembly or to part thereof, e.g. a support for moving the coil assembly relative to the remainder of the MR system
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
- G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
- G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
- G01R33/34—Constructional details, e.g. resonators, specially adapted to MR
- G01R33/34015—Temperature-controlled RF coils
- G01R33/34023—Superconducting RF coils
Definitions
- the present invention relates to a method for preparing a microstructural pattern of a superconductive material.
- superconducting components may be prepared by high temperature sintering of powders which is normally undertaken in a furnace at high temperatures, in moulds of pre-defined shapes.
- Another commonly known method for preparing structures of superconductive materials comprises chemical vapor deposition or sputtering of a superconductive material, followed by a sintering step.
- a disadvantage of the methods for preparing a microstructural pattern of superconductive materials known in the prior art is that highly specialized equipment is required for performing certain process steps, in particular a high temperature furnace, chemical vapor deposition or sputtering devices (usually high vacuum process equipment)
- step c) treating the pattern using a microwave irradiation.
- the treatment of the pattern by the microwave irradiation effects heating the particles to sinter to form the superconductive pattern the substrate.
- the suspension medium of the suspension may be removed by evaporation or decomposition during step c) or by an additional removal step.
- the combination of the use of inkjet technology and microwave irradiation allows for the preparation of a microstructural pattern of a superconductive material without the need for special equipments required in conventional processes. Masks and vapor deposition equipments are not required. This makes the method according to the present invention especially suitable for rapidly preparing prototype level of microstructured components of a superconducting material, such as a prototype of a superconducting circuit that can be subsequently used e.g. for cables or power generators, or a customized RF induction coil for MRI or a Josephson junction for a rapid single flux quantum circuit.
- microwave irradiation results in a localized heating to the temperatures that are required, eliminating the need for extreme conditions in furnaces.
- Microwave heating offers the advantage of uniform, fast and volumetric heating.
- the absorption of microwave radiation is due to the coupling with charge carriers or rotating dipoles. Therefore, microwaves are more absorbed by polar or ionic materials than by non-polar materials. This increases the efficiency of heating, since energy losses into the substrate are much smaller.
- the use of microwave irradiation results in a faster process, since microwave heating is much more efficient than conventional heating.
- Microwaves are herein meant as electromagnetic waves with frequencies between 300 MHz (0.3 GHz) and 300 GHz. Preferably, the frequencies range between 1 and 100 GHz. The most preferred frequency is 2.54 GHz.
- the advantage of inkjet technology is that it allows for spatially addressable patterns on a surface, without the need for masks.
- inkjet technology allows precise control in depositing the suspension, leading to a precise microstructural pattern.
- Inkjet technology is herein meant, as generally understood in the art, as any technology of depositing droplets to desired locations on the substrate irrespective of the type of force for discharging the droplets.
- the depositing of the suspension may be performed using several different inkjetting techniques, including both drop-on-demand techniques (e.g. thermo, piezoelectric-driven and electro-hydrodynamic jetting) as well as continuous jetting techniques (e.g. electrospraying and other methods based on Rayleigh jet breakup). Due to the uniformity of the droplet sizes and volumes afforded by inkjet printing, the resulting structures are highly reproducible and can be standardized. Typically, droplet size ranges from 1 to 1000 pL, which allows making of a precisely-controlled microstructure.
- the width of the lines defining the microstructured pattern is restricted by the droplet size of the suspension to be deposited by inkjet technology.
- the lines defining the microstructured pattern has a dimension of between e.g. 1-500 pm, 10-250 pm or 100- 150 ⁇ .
- the thermally stable substrate is herein meant as a substrate that can withstand the heat caused by the microwave irradiation.
- Suitable substrates may be chosen by the skilled person according to the heat induced by the microwave irradiation.
- suitable materials include glass and ceramic materials such as silica, including quartz and amorphous silica, borosilicate glass, aluminum oxide.
- the substrate absorbs microwave radiation to a smaller extent compared to the nanoparticles applied to the surface of said substrate.
- Suitable substrates are described in WO2007/039227, which descriptions of the substrates are incorporated herein by reference.
- the selection of the substrate and the nanoparticles is preferably performed to result in a lower dielectric loss factor e" of the material forming the substrate as compared to the dielectric loss factor e" of the material forming the surface pattern.
- the dielectric loss factor e" of the substrate is lower than 50 %, preferably lower than 10 % of the dielectric loss factor e" of the metal forming the surface pattern. This causes the microwaves to couple predominantly with the material with the highest dielectric loss factor, resulting in selective heating of the printed structure, which in turn results in an improvement of desirable properties, such as conductivity or mechanical strength.
- the substrate should absorb microwave radiation to a lesser extent than the metal that constitutes the printed structure, i.e. within the frequency range of interest the dielectric loss factor e" of the metal that constitutes the printed structure should be considerably higher than the dielectric loss factor e" of the substrate material.
- a large variety of substrates can be chosen for the method of this invention.
- Non limiting examples are polymers (thermoplastic and duroplastic polymers including elastomers); inorganic materials, such as ceramic materials; semi-conducting substrates, such as silicon or gallium-arsenide, fibrous substrates containing natural and/or man-made fibers, such as paper, textile sheets including non-wovens; film and sheet materials made from polymers and or natural materials, such as leather, wood or thermoplastic sheet or bulk materials including composites containing said sheet or bulk materials.
- polymers thermoplastic and duroplastic polymers including elastomers
- inorganic materials such as ceramic materials
- semi-conducting substrates such as silicon or gallium-arsenide, fibrous substrates containing natural and/or man-made fibers, such as paper, textile sheets including non-wovens
- film and sheet materials made from polymers and or natural materials, such as leather, wood or thermoplastic sheet or bulk materials including composites containing said sheet or bulk materials.
- Suitable substrates can possess a large variety of properties.
- they can be transparent or non-transparent, or they can be crystalline or non-crystalline or they can contain adjuvants, such as pigments, antistatic agents, fillers, reinforcing materials, lubricants, processing aids and heat and/or light stabilizers.
- thermoplastic polymers such as polyesters (e.g. polyethyleneterephthalate), polyamides, polyimides, polyether-imides, polycarbonates, polyolefins (e.g. polyethylene or polypropylene), polyetherketones, polysiloxanes and polyarylenesulphides, such as polyphenylenesulphide.
- any known superconductive materials may be used for the method of the present invention.
- Examples of known superconductive materials are listed in http://www.superconductors.org/Type2.htm, including Sn 3 Ba 4 Ca 2 Cu 7 O y, HgBa 2 Cu0 + , TISnBa 4 Y 2 Cu 4 O x , Sn 4 Ba 4 Y 3 Cu 7 O x , Bi 1 . 6 Pbo. 6 Sr 2 Ca 2 Sbo .1 Cu 3 0 y , (Ca L xSr ⁇ CuOz, Pb 3 Sr 4 Ca 3 Cu 6 O x , AuBa 2 Ca 3 Cu 4 Oii, YBa 3 Cu 4 O x , GaSr 2 (Cao. 5 Tmo.
- Typical mean nanoparticle diameters are in a range between 1 nm - 500 nm, very preferably 1 nm - 100 nm and especially preferably 1 nm - 50 nm.
- the mean nanoparticle diameter is determined by transmission electron microscope (TEM).
- the suspension comprising nanoparticles of the precursors of the superconductive material is provided in step a). These precursors are reacted to obtain the superconductive material in step c).
- the synthesis of the superconductive material in step c) is accomplished by a so-called self-propagating high-temperature synthesis (SHS) reaction. It allows for the release of high amount of heat in a controlled, portable manner.
- SHS self-propagating high-temperature synthesis
- the microwave irradiation serves for both the synthesis of the superconductive material as well as for sintering the particles to form the superconductive pattern on the substrate, allowing a simple method with less steps. A separate step of synthesizing the superconductive material thus becomes unnecessary.
- SHS a variant of combustion synthesis
- This combustion-like process is ignited by point-heating of a small part (usually the top) of the prepared sample.
- the heat should be enough for initial burning of surrounding material, which in turn, generates heat that burns the following part of the material, and in this way a wave of exothermic reaction is generated that covers the rest of material.
- This method it is possible to obtain various products both inorganic and organic nature with unusual properties, for example powders, metallic alloys, ceramics with high purity, corrosion-resistance at high-temperature or super-hardnessity.
- the use of SHS as a superconductor thin film preparative technique is known e.g. from A. Sanson et. al, Ceram. Int. 2010, 36, 521.
- Microwave initiated SHS synthesis is known e.g. from J. Peng et. al, J. Mat. Synth. Proces. 2010, 9, 363.
- SHS can be performed in fine powders, thin films, liquids, gases, powder-liquid systems, gas suspensions, layered systems, gas-gas systems, etc.
- the mixture may burn in vacuum, air or inert or reactive gas.
- Suitable precursors for each superconductive material is known to the skilled person.
- Typical precursors are metal oxides of each of the metal constituting the superconductive material.
- the precursors of yttrium barium copper oxide may be Y 2 0 3 , BaC0 3 and CuO, as described e.g. in J. M. Qiao et.
- MgB 2 can also be prepared by combustion syntheses (see: a) W. Dai, et. al, Progress in Natural Science 2002, 12, 801 ; b) V. Braccini et. al, Physica C 2007, 456, 209; c) M. Tomsic et. al, Physica C 2007, 456, 203; d) K. Vinod et. al, Supercond. Sci. Technol. 2007, 20, R1.)
- step c) inducing SHS reactions are performed under specialized atmospheric conditions for maximum performance.
- step c) is preferably performed in a high pressure nitrogenous atmosphere.
- step c) is preferably performed in a high pressure hydrogen atmosphere.
- step a) comprises the sub- steps of:
- the capping agent is attached to the surface of the nanoparticles so that the aggregation of the nanoparticles is prevented and the suspension of nanoparticles is stabilized.
- the deposited pattern is calcinated under microwave conditions to remove the organic dispersing agent, and then sintered to yield the final product. The intensity of the microwave may be changed between the calcination and the sintering.
- Nanopowder-based fabrication of superconductor materials is known to the skilled person. Known examples include nanoparticles of dispersions of Yttrium barium copper oxide, as described in T. Kumagai et.al, Advances in Superconductivity XII, Proceedings of ISS'99, 2000, 927.
- Suitable capping agents may be chosen by the skilled person according to the type of the superconductor material.
- suitable capping agents include carboxylic acids, like fatty acids, thiols, amines and polymers, like polyvinylpyrrolidone.
- the microwave energy applied is preferably between 1W and 400 W, 1W and 1000 W or 1 W and 2000 W.
- Another aspect of the present invention relates to an article provided with the microstructured pattern obtainable by the method according to the present invention.
- the article is preferably a superconducting circuit.
- Another aspect of the present invention relates to use of the superconducting circuit according to the present invention for a cable, a power generator, a customized RF induction coil for MRI or a Josephson junction for a rapid single flux quantum circuit.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
L'invention concerne un procédé de préparation d'un motif microstructuré d'un matériau supraconducteur qui consiste à : a) se procurer une suspension comprenant des nanoparticules du matériau supraconducteur ou de ses précurseurs ; b) déposer la suspension sur un substrat stable à la chaleur par une technologie de jet d'encre selon un motif ; et c) traiter le motif par irradiation micro-ondes. L'invention concerne également un article pourvu d'un tel motif microstructural.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP10015709 | 2010-12-16 | ||
EP10015709.8 | 2010-12-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012079747A1 true WO2012079747A1 (fr) | 2012-06-21 |
Family
ID=43982276
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/006302 WO2012079747A1 (fr) | 2010-12-16 | 2011-12-14 | Procédé de préparation de motifs microstructurés de matériaux supraconducteurs |
Country Status (1)
Country | Link |
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WO (1) | WO2012079747A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106340584A (zh) * | 2016-08-12 | 2017-01-18 | 广西师范学院 | Tl‑2212超导薄膜所用先驱薄膜的快速制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6855378B1 (en) * | 1998-08-21 | 2005-02-15 | Sri International | Printing of electronic circuits and components |
US20060291827A1 (en) * | 2005-02-11 | 2006-12-28 | Suib Steven L | Process and apparatus to synthesize materials |
WO2007039227A1 (fr) | 2005-09-28 | 2007-04-12 | Stichting Dutch Polymer Institute | Procédé de production de structures de surface métallique et dispositif correspondant |
-
2011
- 2011-12-14 WO PCT/EP2011/006302 patent/WO2012079747A1/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6855378B1 (en) * | 1998-08-21 | 2005-02-15 | Sri International | Printing of electronic circuits and components |
US20060291827A1 (en) * | 2005-02-11 | 2006-12-28 | Suib Steven L | Process and apparatus to synthesize materials |
WO2007039227A1 (fr) | 2005-09-28 | 2007-04-12 | Stichting Dutch Polymer Institute | Procédé de production de structures de surface métallique et dispositif correspondant |
Non-Patent Citations (8)
Title |
---|
A. SANSON, CERAM. INT, vol. 36, 2010, pages 521 |
J. M. QIAO, MATER. SCI. ENG., R, vol. 14, 1995, pages 157 |
J. PENG, J. MAT. SYNTH. PROCES., vol. 9, 2010, pages 363 |
K. VINOD, SUPERCOND. SCI. TECHNOL., vol. 20, 2007, pages R1 |
M. TOMSIC, PHYSICA C, vol. 456, 2007, pages 203 |
Q. FENG, X. ET AL., RARE METAL MATERIALS AND ENGINEERING, vol. 39, 2010, pages 574 |
V. BRACCINI, PHYSICA C, vol. 456, 2007, pages 209 |
W. DAI, PROGRESS IN NATURAL SCIENCE, vol. 12, 2002, pages 801 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106340584A (zh) * | 2016-08-12 | 2017-01-18 | 广西师范学院 | Tl‑2212超导薄膜所用先驱薄膜的快速制备方法 |
CN106340584B (zh) * | 2016-08-12 | 2018-08-21 | 广西师范学院 | Tl-2212超导薄膜所用先驱薄膜的快速制备方法 |
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