WO2012064571A3 - Nanogénérateurs à ensembles de nanofils latéraux de grande taille - Google Patents

Nanogénérateurs à ensembles de nanofils latéraux de grande taille Download PDF

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Publication number
WO2012064571A3
WO2012064571A3 PCT/US2011/059044 US2011059044W WO2012064571A3 WO 2012064571 A3 WO2012064571 A3 WO 2012064571A3 US 2011059044 W US2011059044 W US 2011059044W WO 2012064571 A3 WO2012064571 A3 WO 2012064571A3
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WO
WIPO (PCT)
Prior art keywords
elongated
nanogenerators
conductive layer
conductive material
conductive
Prior art date
Application number
PCT/US2011/059044
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English (en)
Other versions
WO2012064571A2 (fr
Inventor
Zhong L. Wang
Chen Xu
Yong Qin
Guang Zhu
Rusen Yang
Youfan Hu
Yan Zhang
Original Assignee
Georgia Tech Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgia Tech Research Corporation filed Critical Georgia Tech Research Corporation
Priority to CN201180063661.3A priority Critical patent/CN103718450A/zh
Publication of WO2012064571A2 publication Critical patent/WO2012064571A2/fr
Publication of WO2012064571A3 publication Critical patent/WO2012064571A3/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Dans un procédé de fabrication d'un dispositif de génération (100), plusieurs éléments germes allongés (114) espacés les uns des autres sont déposés sur une surface d'un substrat non conducteur flexible (110). Une couche conductrice allongée (118) est appliquée sur une surface supérieure et un premier côté de chaque élément germe (114), laissant ainsi un second côté exposé opposé au premier côté. Plusieurs nanostructures piézoélectriques allongées (122) sont cultivées latéralement à partir du second côté de chaque élément germe (114). Un second matériau conducteur (126) est déposé sur le substrat (110) de manière adjacente à chaque première couche conductrice allongée (118) de manière à être accouplé à l'extrémité distale de chaque nanostructure de la pluralité de nanostructures piézoélectriques allongées (122). Le second matériau conducteur (126) est choisi de manière à former une barrière de Schottky entre le second matériau conducteur (126) et l'extrémité distale de chaque nanostructure de la pluralité de nanostructures piézoélectriques allongées (122) et de manière à former un contact électrique avec la première couche conductrice (118).
PCT/US2011/059044 2010-11-10 2011-11-03 Nanogénérateurs à ensembles de nanofils latéraux de grande taille WO2012064571A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201180063661.3A CN103718450A (zh) 2010-11-10 2011-11-03 大规模横向纳米线阵列式纳米发电机

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/943,499 US8623451B2 (en) 2009-11-10 2010-11-10 Large-scale lateral nanowire arrays nanogenerators
US12/943,499 2010-11-10

Publications (2)

Publication Number Publication Date
WO2012064571A2 WO2012064571A2 (fr) 2012-05-18
WO2012064571A3 true WO2012064571A3 (fr) 2013-06-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/059044 WO2012064571A2 (fr) 2010-11-10 2011-11-03 Nanogénérateurs à ensembles de nanofils latéraux de grande taille

Country Status (3)

Country Link
US (1) US8623451B2 (fr)
CN (1) CN103718450A (fr)
WO (1) WO2012064571A2 (fr)

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US8829767B2 (en) 2011-05-17 2014-09-09 Georgia Tech Research Corporation Large-scale fabrication of vertically aligned ZnO nanowire arrays
US9368710B2 (en) 2011-05-17 2016-06-14 Georgia Tech Research Corporation Transparent flexible nanogenerator as self-powered sensor for transportation monitoring
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WO2013040137A1 (fr) 2011-09-13 2013-03-21 Georgia Tech Research Corporation Bloc d'alimentation auto-chargeable
CN102522493B (zh) * 2011-12-07 2013-10-02 中国科学院微电子研究所 压电纳米线的叠层结构及其制造方法
CN106887453B (zh) * 2011-12-19 2020-08-21 英特尔公司 Ⅲ族-n纳米线晶体管
CN102593347A (zh) * 2012-03-12 2012-07-18 北京大学 基于心肌细胞的氧化锌纳米线发电机及制备方法
CN102647111B (zh) * 2012-04-23 2015-12-09 兰州大学 磁力驱动的纳米发电机
US10393885B2 (en) * 2012-06-20 2019-08-27 Battelle Memorial Institute Gamma radiation stand-off detection, tamper detection, and authentication via resonant meta-material structures
WO2013192403A2 (fr) 2012-06-20 2013-12-27 Battelle Memorial Institute Fenêtres en métamatériaux bidimensionnels
US9024395B2 (en) 2012-09-07 2015-05-05 Georgia Tech Research Corporation Taxel-addressable matrix of vertical nanowire piezotronic transistors
US9455399B2 (en) 2012-09-12 2016-09-27 Georgia Tech Research Corporation Growth of antimony doped P-type zinc oxide nanowires for optoelectronics
CN103366562B (zh) * 2012-09-12 2016-04-06 北京纳米能源与系统研究所 交通监测传感器和检测方法
CN102916611B (zh) * 2012-09-26 2014-10-29 华中科技大学 一种柔性发电装置及其制造方法
US9112432B2 (en) 2012-12-14 2015-08-18 Samsung Electronics Co., Ltd. Piezoelectric generator and method of manufacturing the same
CN104253561B (zh) * 2013-06-25 2018-06-08 北京纳米能源与系统研究所 滑动摩擦发电机、发电方法以及矢量位移传感器
US10298152B2 (en) * 2015-04-20 2019-05-21 Lawrence Livermore National Security, Llc Harvesting mechanical and thermal energy by combining nanowires and phase change materials
US9786496B2 (en) * 2015-08-17 2017-10-10 Lam Research Corporation Method of densifying films in semiconductor device
CN105718116A (zh) * 2016-02-01 2016-06-29 京东方科技集团股份有限公司 一种触控面板及其制备方法、触控显示屏
US9711607B1 (en) * 2016-04-15 2017-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. One-dimensional nanostructure growth on graphene and devices thereof
GB2567851A (en) * 2017-10-26 2019-05-01 Shakur Rameen An energy harvesting device
CN109585641A (zh) * 2018-11-06 2019-04-05 浙江海洋大学 一种基于pet/银纳米线/氧化锌复合薄膜/氧化锌纳阵列的纳米发电机及制备方法
CN113764570A (zh) * 2021-09-08 2021-12-07 全球能源互联网研究院有限公司 一种压电结构及其制备方法

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Also Published As

Publication number Publication date
US20110107569A1 (en) 2011-05-12
CN103718450A (zh) 2014-04-09
US8623451B2 (en) 2014-01-07
WO2012064571A2 (fr) 2012-05-18

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