WO2012056984A1 - Substrate transfer device and substrate processing system provided with same - Google Patents

Substrate transfer device and substrate processing system provided with same Download PDF

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Publication number
WO2012056984A1
WO2012056984A1 PCT/JP2011/074136 JP2011074136W WO2012056984A1 WO 2012056984 A1 WO2012056984 A1 WO 2012056984A1 JP 2011074136 W JP2011074136 W JP 2011074136W WO 2012056984 A1 WO2012056984 A1 WO 2012056984A1
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WIPO (PCT)
Prior art keywords
substrate
robot hand
speed
surface potential
transfer apparatus
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PCT/JP2011/074136
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French (fr)
Japanese (ja)
Inventor
哲也 中林
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シャープ株式会社
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Publication of WO2012056984A1 publication Critical patent/WO2012056984A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/061—Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04—Arrangements of vacuum systems or suction cups

Definitions

  • the present invention relates to a substrate transfer apparatus that transfers a substrate using a robot hand, and also relates to a substrate processing system including the substrate transfer apparatus and a plurality of substrate processing apparatuses.
  • various types of substrate processing apparatuses are applied to substrates in order to perform various types of processing on substrates (glass substrates, semiconductor substrates, etc.) that are workpieces.
  • substrates glass substrates, semiconductor substrates, etc.
  • a substrate transfer apparatus equipped with a robot hand is used for loading and unloading a substrate to and from the substrate processing apparatus, and the substrate can be lifted off, lifted on, transferred, etc. using the robot hand equipped in the substrate transfer apparatus.
  • the substrate is carried into and out of the substrate processing apparatus.
  • a substrate processing system configured to cover and carry in and out of a plurality of substrate processing apparatuses with a single substrate transfer apparatus has become common. It is going
  • Electrostatic discharge is a physical phenomenon in which the charge accumulated in an object moves with other objects in a non-contact state, and generally occurs when a charged object is placed close to another object. Is.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 8-97121
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2000-216228
  • Patent Document 3 Japanese Patent Application Laid-Open No. 83
  • Patent Document 3 discloses the above.
  • a surface electrometer and an ionizer are arranged above a stage on which a substrate is placed, and the surface of the upper surface of the substrate placed on the stage
  • the electric potential is detected using a surface electrometer, and the ionized gas is sprayed onto the upper surface of the substrate using an ionizer based on the detection result to neutralize the charge on the upper surface of the substrate, thereby eliminating the charge.
  • a surface electrometer is disposed above the stage on which the substrate is placed, and ionized gas is released to the stage.
  • the surface potential of the upper surface of the substrate placed on the stage was detected using a surface potentiometer, and ionized toward the lower surface of the substrate through the discharge hole based on the detection result
  • a surface potentiometer By discharging the gas, the charge on the lower surface of the substrate is neutralized and the charge is eliminated, thereby preventing electrostatic discharge from occurring when the substrate is lifted off.
  • the robot hand provided in the substrate transfer apparatus is provided with a discharge hole for discharging ionized gas, and the robot hand Prior to supporting the substrate, the ionized gas is blown toward the substrate through the discharge hole to neutralize the charge on the surface of the substrate, thereby removing static electricity. This causes electrostatic discharge when the substrate is lifted off. To prevent that.
  • JP-A-8-97121 JP 2000-216228 A Japanese Patent Laid-Open No. 2000-82732
  • the present invention has been made to solve the above-described problems, and can prevent the electrostatic discharge more reliably and effectively, and can transfer the substrate that can simplify and downsize the manufacturing equipment. It is an object to provide a mounting apparatus and a substrate processing system including the same.
  • a substrate transfer apparatus sequentially transfers a plurality of substrates by raising and lowering a plurality of substrates, and a robot hand capable of supporting a substrate by being inserted below the substrate;
  • a robot hand raising / lowering mechanism for raising and lowering the robot hand;
  • a surface potential detecting unit provided in the robot hand and capable of detecting the surface potential of the lower surface of the substrate supported by the robot hand.
  • a controller capable of variably adjusting the ascending speed and / or descending speed of the substrate by controlling the driving of the robot hand lifting mechanism.
  • the control unit detects the surface potential of the lower surface of the one substrate, which is detected when the one substrate is raised or lowered at a predetermined rising speed and / or lowering speed, which is detected by the surface potential detecting unit. Based on this change, the rising speed and / or lowering speed of another substrate of the same type that is subsequently raised or / and lowered is determined.
  • the control unit raises and / or lowers one substrate detected by the surface potential detection unit at a predetermined ascent rate and / or descend rate. Based on the change in the surface potential of the lower surface of the one substrate that occurs when it is caused to occur, the presence or absence of electrostatic discharge in the meantime is determined.
  • the rising speed and / or lowering speed of the other substrate is reduced and it is determined that there is no electrostatic discharge, the rising speed and / or lowering speed of the other board of the same type to be raised or / and lowered next is increased to the predetermined level.
  • An ascending speed or / and a descending speed that is maintained at a speed or / and a descending speed, or a predetermined margin is added to the predetermined ascending speed or / and the descending speed. Setting it is preferable to.
  • the substrate transfer apparatus it is preferable that a plurality of the surface potential detection units are provided in the robot hand.
  • the surface potential detection unit can be detachably attached to an arbitrary position of the robot hand.
  • the surface potential detection unit is provided movably on the robot hand.
  • the substrate transfer apparatus preferably further includes an ionizer that generates positive ions and / or negative ions, and in this case, positive ions and / or negative ions generated by the ionizer are used. It is preferable that a discharge hole for spraying toward the substrate is provided in the robot hand.
  • the substrate processing system based on this invention is equipped with the substrate transfer apparatus based on this invention mentioned above, and the several substrate processing apparatus for processing a board
  • the said substrate transfer apparatus is set to the said several substrate processing apparatus. It is comprised as a site
  • control unit can individually adjust the substrate rising speed and / or the lowering speed variably for each of the plurality of substrate processing apparatuses.
  • ADVANTAGE OF THE INVENTION while being able to prevent an electrostatic discharge more reliably and effectively, it can be set as the board
  • substrate transfer apparatus which can simplify and reduce a manufacturing facility, and can be set as a substrate processing system provided with the same. it can.
  • FIG. 1 It is a top view which shows the outline
  • FIG. 1 It is a schematic diagram for demonstrating the lift-off operation
  • FIG. 1 is a plan view showing an outline of a substrate processing system according to Embodiment 1 of the present invention.
  • 2 is a schematic perspective view of a robot hand of the substrate transfer apparatus shown in FIG. 1
  • FIG. 3 is a diagram showing a functional block configuration of the substrate transfer apparatus shown in FIG. First, with reference to these FIG. 1 thru
  • the substrate processing system 1 includes three substrate processing apparatuses including a first substrate processing apparatus 3, a second substrate processing apparatus 4, and a third substrate processing apparatus 5, and one substrate.
  • the transfer apparatus 20 is mainly provided.
  • Each of the first substrate processing apparatus 3, the second substrate processing apparatus 4, and the third substrate processing apparatus 5 is an apparatus for performing a predetermined process on the substrate 100 that is a workpiece.
  • the substrate transfer apparatus 20 is an apparatus for sequentially carrying the substrates 100 in and out of the three substrate processing apparatuses.
  • the substrate 100 accommodated in the substrate transport cassette 2 is carried into the first substrate processing apparatus 3 by the substrate transfer apparatus 20.
  • the substrate 100 after being loaded into the first substrate processing apparatus 3 and subjected to a predetermined process is unloaded from the first substrate processing apparatus 3 by the substrate transfer apparatus 20 and loaded into the second substrate processing apparatus 4.
  • the substrate 100 after being loaded into the second substrate processing apparatus 4 and subjected to a predetermined process is unloaded from the second substrate processing apparatus 4 by the substrate transfer apparatus 20 and loaded into the third substrate processing apparatus 5.
  • the substrate 100 after being loaded into the third substrate processing apparatus 5 and subjected to a predetermined process is unloaded from the third substrate processing apparatus 5 by the substrate transfer apparatus 20 and loaded into the substrate transport cassette 2.
  • the plurality of substrates 100 accommodated in the substrate transport cassette 2 are sequentially transferred by the substrate transfer device 20, so that the plurality of substrates 100 are transferred. A series of processes are sequentially performed individually.
  • the substrate transfer device 20 has a robot hand 21.
  • the robot hand 21 is made of a fork-like member that can support the substrate 100 by being inserted below the substrate 100, and has a plurality of support portions 22 provided in parallel to each other (see FIG. 2). ).
  • the robot hand 21 is movably supported by a robot hand drive mechanism 31 (see FIG. 3), which will be described later, so that its position can be arbitrarily adjusted.
  • each of the first substrate processing apparatus 3, the second substrate processing apparatus 4 and the third substrate processing apparatus 5 has a stage 10 for placing the substrate 100 in the chamber.
  • the stage 10 is a stage for supporting the substrate 100 while processing the substrate 100.
  • a plurality of groove portions 12 into which the support portion 22 of the robot hand 21 of the substrate transfer device 20 can be inserted are provided in parallel on the mounting surface 11 (see FIGS. 4A to 4C and the like) which is the upper surface of the stage 10. It has been.
  • any of the first substrate processing apparatus 3, the second substrate processing apparatus 4, and the third substrate processing apparatus 5 may perform any processing on the substrate 100.
  • a heat treatment apparatus, a film forming apparatus, An exposure apparatus, a developing apparatus, a cleaning apparatus, an impurity introduction apparatus, and the like correspond to these.
  • the case where the substrate processing system includes three substrate processing apparatuses is illustrated, but the number of substrate processing apparatuses is not particularly limited, and at least one substrate processing system is provided. Preferably, two or more substrate processing apparatuses may be provided. Further, in the present embodiment, the case where the substrate processing system includes one substrate transfer device is illustrated, but the number of substrate transfer devices is not particularly limited, and the substrate processing system is not limited. Two or more substrate transfer apparatuses may be provided.
  • a plurality of suction pads 23 are provided on the upper surface of the support portion 22 of the robot hand 21, respectively. These suction pads 23 are members for stably sucking and holding the substrate 100 by the robot hand 21, and each suction pad 23 is a pump which will be described later via a communication path provided inside the robot hand 21. 32 (see FIG. 3).
  • the suction pad 23 generates a negative pressure on the surface thereof when the pump 32 is driven, and sucks and holds the substrate 100 disposed on the support portion 22 using the negative pressure.
  • various types such as a general cylindrical suction pad, a bellows type suction pad, and a Bernoulli type suction pad can be used.
  • the support portion 22 of the robot hand 21 is provided with a plurality of surface potential detection sensors 24, respectively.
  • These surface potential detection sensors 24 correspond to a surface potential detection unit for detecting the surface potential of the lower surface 111 (see FIGS. 4A to 4C, etc.) of the substrate 100 supported by the robot hand 21, and each surface potential detection.
  • the detection directions of the sensors 24 are all arranged so as to face the robot hand 21.
  • the surface of the substrate 100 is avoided so that the lower surface 111 of the substrate 100 and the detection head of the surface potential detection sensor 24 come into contact with each other when the substrate 100 supported by the robot hand 21 is bent. All of the detection heads of the potential detection sensor 24 are arranged at positions where they are retracted downward from the upper surface of the support portion 22.
  • a plurality of discharge holes 25 are provided on the upper surface of the support portion 22 of the robot hand 21. These discharge holes 25 are portions for blowing ionized gas toward the lower surface 111 of the substrate 100 supported by the robot hand 21, and each discharge hole 25 is a ventilation hole provided in the robot hand 21. It is connected to the ionizer 33 and the compressor 34 (refer FIG. 3) mentioned later via the path. The discharge hole 25 blows the ionized gas generated by driving the ionizer 33 and the compressor 34 toward the substrate 100 by discharging the ionized gas from the discharge hole 25 to the outside.
  • the substrate transfer device 20 includes a control unit 30 in addition to the robot hand 21, the suction pad 23 provided on the robot hand 21, the surface potential detection sensor 24, and the discharge hole 25.
  • a robot hand drive mechanism 31, a pump 32, an ionizer 33, a compressor 34, and a storage unit 35 are included.
  • the control unit 30 is a part for controlling the operation of the substrate transfer apparatus 20 as a whole by controlling the driving of each functional block included in the substrate transfer apparatus 20.
  • the robot hand drive mechanism 31 is a part for moving the robot hand 21 described above, and its drive is controlled by the control unit 30. Specifically, the robot hand drive mechanism 31 moves the robot hand 21 to an arbitrary position in the horizontal plane, and moves the robot hand 21 to an arbitrary position along the vertical direction. A robot hand raising / lowering mechanism capable of rotating the robot hand 21 and a robot hand turning mechanism capable of rotating the robot hand 21. Thereby, the robot hand drive mechanism 31 moves the robot hand 21 to an arbitrary position three-dimensionally in an arbitrary direction based on a control signal input from the control unit 30.
  • the robot hand drive mechanism 31 is configured so that the control unit 30 can variably control the moving speed (including the ascending speed and / or the descending speed) of the robot hand 21 for each substrate to be transported. .
  • the pump 32 is a part for generating a negative pressure in the above-described suction pad 23, and its drive is controlled by the control unit 30. Specifically, the pump 32 is connected to the suction pad 23 via the communication path provided in the robot hand 21 described above. Here, an electromagnetic valve for maintaining negative pressure and an electromagnetic valve for exhaust (not shown) are disposed between the pump 32 and the suction pad 23, and these solenoid valves are operated by the control unit 30. Be controlled. The pump 32 opens the negative pressure maintaining electromagnetic valve and causes the pump 32 and the suction pad 23 to communicate with each other, thereby generating a negative pressure on the suction surface of the suction pad 23, whereby the substrate 100 is sucked.
  • the negative pressure maintaining electromagnetic valve is closed and the pump 32 and the suction pad 23 are not communicated with each other, so that the negative pressure is maintained and the state where the substrate 100 is sucked is maintained.
  • the exhaust solenoid valve is opened, the negative pressure generated on the suction surface of the suction pad 23 disappears, whereby the suction of the substrate 100 is released.
  • the substrate 100 placed on the robot hand 21 is supported and released.
  • the ionizer 33 and the compressor 34 are portions for discharging the ionized gas from the discharge hole 25 described above, and the drive of each is controlled by the control unit 30.
  • the compressor 34 is connected to the discharge hole 25 via the ventilation path provided in the robot hand 21 described above.
  • an electromagnetic valve (not shown) is disposed between the compressor 34 and the discharge hole 25, and the operation of the electromagnetic valve is controlled by the control unit 30.
  • the compressor 34 releases the compressed gas from the discharge hole 25 to the outside by opening the electromagnetic valve and communicating the compressor 34 with the discharge hole 25.
  • the discharge of the compressed gas from the discharge hole 25 is stopped by closing the electromagnetic valve and disabling the compressor 34 and the discharge hole 25.
  • the ionizer 33 is provided in the middle of the above-described ventilation path, and generates positive ions and negative ions by being driven. Thereby, based on the control signal input from the control part 30, discharge
  • the storage unit 35 is a part in which a program for causing the substrate transfer apparatus 20 to execute various operations is stored in advance, and the control unit 30 reads the program and controls each functional block based on the program. Thereby, the substrate transfer device 20 performs an operation according to the situation.
  • the storage unit 35 temporarily stores information detected by the surface potential detection sensor 24 when the substrate 100 described later is lifted on and lifted off, and the substrate 100 is lifted when the substrate 100 is lifted on and lifted off. It is also a part that memorizes the speed or / and the descending speed.
  • the control unit 30 includes a calculation unit for performing various calculation processes based on information detected by the surface potential detection sensor 24, a determination unit for performing various determination processes based on calculation results in the calculation unit, and the like. It is out.
  • calculation unit and the determination unit for example, calculation processing and determination processing in a control flow shown in FIG.
  • control unit 30 is electrically connected to each functional block, and controls the operation of the substrate transfer apparatus 20 as a whole. Specifically, as described above, the control unit 30 receives a signal output from the surface potential detection sensor 24, or includes a robot hand drive mechanism 31, a pump 32, an ionizer 33, a compressor 34, an electromagnetic valve (not shown), and the like. Generate and output various signals for driving, read and execute programs stored in the storage unit 35, and store various types of information in the storage unit 35, thereby transferring the substrate. 20 operations are controlled as a whole.
  • the substrate transfer apparatus 20 further displays a map, histogram data, and the like indicating the operating state of the substrate transfer apparatus 20, the average tact during the substrate transfer, and the distribution of the charge amount in the substrate plane.
  • a display unit 36 and an operation unit 37 for performing various operations such as surface potential specification setting.
  • the display unit 36 and the operation unit 37 are both electrically connected to the control unit 30, the display operation of each is controlled by the control unit 30, user commands, information input by the user, and the like to the control unit 30. Or output.
  • FIG. 4A to 4C are schematic diagrams for explaining the lift-off operation of the substrate using the substrate transfer apparatus in the present embodiment. Next, with reference to these FIG. 4A thru
  • the support portion 22 of the robot hand 21 is inserted into the groove portion 12 provided on the mounting surface 11 of the stage 10, and in this state, the electromagnetic valve connected to the pump 32 is opened. As a result, the substrate 100 is sucked and held by the suction pad 23, and the substrate 100 is stably supported by the robot hand 21.
  • the lower surface 111 of the substrate 100 is charged with electric charges due to peeling charging, and accordingly, the placement surface 11 of the stage 10 is charged with the lower surface of the substrate 100.
  • a charge having a polarity different from the charge charged to 111 is charged.
  • the charge amount of the lower surface 111 of the substrate 100 exceeds a certain value in relation to the distance between the lower surface 111 of the substrate 100 and the mounting surface 11 of the stage 10 (that is, the lower surface 111 of the substrate 100).
  • the potential difference between the stage 10 and the mounting surface 11 of the stage 10 is equal to or greater than a predetermined potential difference
  • FIG. 4C schematically illustrates the case where a positive charge is charged on the lower surface 111 of the substrate 100 and a negative charge is charged on the mounting surface 11 of the stage 10.
  • the polarity of these charged charges may change.
  • the charge amount and the polarity of the charge on the lower surface 111 of the substrate 100 vary depending on the type of processing performed in the substrate processing apparatus in which the stage 10 is installed, the shape, size, composition, etc. of the substrate 100, As long as the same type of substrate (substrate having the same shape, size, composition, etc.) is processed in one substrate processing apparatus, the same is obtained. Therefore, in the substrate processing system 1 as in the present embodiment, the charge amount and the polarity of charges generated on the lower surface 111 of the substrate 100 when the substrate 100 is lifted off are different for each of a plurality of different types of substrate processing apparatuses ( That is, it becomes the same for every 1st substrate processing apparatus 3, the 2nd substrate processing apparatus 4, and the 3rd substrate processing apparatus 5.
  • the rising speed of the substrate 100 is deeply related to whether or not electrostatic discharge occurs.
  • whether or not electrostatic discharge occurs depends on the distance between the lower surface 111 of the substrate 100 and the mounting surface 11 of the stage 10 and the lower surface 111 of the substrate 100 and the mounting surface 11 of the stage 10 at the distance.
  • the potential difference between the two is related to the rising speed of the substrate 100, and when the rising speed of the substrate 100 is set relatively high, the potential difference that changes as the substrate 100 moves increases extremely. In other words, when the rising speed of the substrate 100 is set to be relatively slow, an increase in the potential difference that changes with the movement of the substrate 100 can be suppressed.
  • FIG. 5 is a diagram showing a control flow of the control unit of the substrate transfer apparatus according to the present embodiment
  • FIG. 6 is a graph showing a change in the surface potential of the lower surface of the substrate during lift-off. Note that the control flow shown in FIG. 5 illustrates only specific control related to the lift-off operation performed by the control unit for one substrate processing apparatus, and illustrates this as a control flow.
  • the surface potential detection sensor 24 is provided in the substrate transfer device 20, and electrostatic discharge is generated between the substrate 100 and the stage 10 in the control unit 30 based on the output of the surface potential detection sensor 24 at the time of lift-off. Based on the determination result, the controller 30 determines the subsequent rising speed of the other substrate 100 of the same type, thereby preventing the occurrence of electrostatic discharge and improving the production efficiency. We are trying to prevent the decline.
  • the control unit 30 first reads the ascending speed stored in the storage unit 35 and sets it as the ascending speed of the substrate in the first lift-off operation (step S1).
  • the rising speed stored in advance in the storage unit 35 is preferably a slightly higher speed than the speed at which electrostatic discharge is determined to occur empirically.
  • step S2 determines whether there is a substrate to be lifted off (step S2).
  • the control unit 30 proceeds to step S3 described later.
  • the series of operations is terminated. Whether or not there is a substrate to be lifted off can be detected by using a substrate detection sensor or the like provided at an appropriate position.
  • step S3 the control unit 30 performs a lift-off operation by driving the robot hand lifting mechanism. At that time, the control unit 30 raises the substrate 100 at the set ascending speed, acquires information input from the surface potential detection sensor 24 described above, and temporarily stores it in the storage unit 35 as time-series data.
  • the control unit 30 raises the substrate 100 at the set ascending speed, acquires information input from the surface potential detection sensor 24 described above, and temporarily stores it in the storage unit 35 as time-series data.
  • control unit 30 reads the time-series data temporarily stored in the storage unit 35 at the time when the lift-off operation is completed, and whether there was an electrostatic discharge at the time of lift-off based on the read time-series data. It is determined whether or not (step S4).
  • a determination method of the control unit 30 at that time for example, the following method can be used.
  • the surface potential of the lower surface 111 of the substrate 100 greatly increases from the lift-off start time t0 of the substrate 100 to the time t1 A when the electrostatic discharge occurs, during subsequent to lift-off the end time t2 a, the surface potential of the lower surface 111 of the substrate 100 is lowered.
  • time t1 A when the electrostatic discharge has occurred a characteristic change is seen in which the surface potential of the lower surface 111 of the substrate 100 drops significantly in a very short time thereafter. This is because charge transfer occurs between the substrate 100 and the stage 10 due to the occurrence of electrostatic discharge.
  • the decrease in the surface potential is caused by the subsequent decrease in the surface potential and the decrease rate (change rate). It can be distinguished sufficiently.
  • the control unit 30 calculates the reduction rate (change rate) by differentiating the time series data acquired by using the plurality of surface potential detection sensors 24 with respect to time, and the predetermined reduction rate (change rate) is obtained. Whether there was electrostatic discharge during lift-off by performing arithmetic processing and comparison processing such as comparing the threshold (the threshold may be set empirically) and the actually calculated decrease rate (change rate) It becomes possible to determine whether or not. In general, electrostatic discharge often occurs locally, and in the above determination, all the time-series data acquired by the plurality of surface potential detection sensors 24 are determined, and one of them is selected. It may be determined that there has been electrostatic discharge when data indicating that there has been electrostatic discharge is included.
  • step S5 when it is determined in step S4 that electrostatic discharge has occurred (YES in step S4), the control unit 30 resets the substrate rising speed in the lift-off operation ( Step S5).
  • the control part 30 memorize
  • the rising speed of the substrate to be reset may be a speed slower than the rising speed of the substrate in the previous lift-off operation, for example, 90% of the rising speed of the substrate in the previous lift-off operation, How late the resetting may be determined as appropriate.
  • the deceleration of the ascending speed is determined by a program stored in the storage unit 35, and can be freely set by appropriately changing the program.
  • control unit 30 does not reset the substrate rising speed in the lift-off operation, and does not reset the substrate in the previous lift-off operation.
  • the rising speed is maintained (step S6), and then the process returns to step S2.
  • control unit 30 maintains the substrate rising speed reset in step S5 or maintained in step S6 in the second and subsequent lift-off operations (step S3) except for the first time. Any one of the rising speeds of the substrate is read from the storage unit 35, and this is set as the rising speed of the substrate in the lift-off operation.
  • the control unit 30 causes the lower surface of the one substrate to be generated when the one substrate is raised at a predetermined rising speed, which is detected by the surface potential detection sensor 24. Based on the change in surface potential, the rising speed of another substrate of the same type to be subsequently raised is determined. More specifically, the control unit 30 is based on a change in the surface potential of the lower surface of the one substrate that is detected when the one substrate is raised at a predetermined rising speed, which is detected by the surface potential detection sensor 24. In the meantime, the presence or absence of electrostatic discharge is determined.
  • the rising speed of another substrate of the same type to be raised next is reduced, and when it is determined that there is no electrostatic discharge, the next increase Control is performed so that the rising speed of another substrate of the same type to be maintained is maintained at the predetermined rising speed.
  • the first several substrates may be electrostatically discharged, but the substrates that are subsequently lifted off may be within a range in which electrostatic discharge does not occur and electrostatic discharge does not occur.
  • the substrate can be lifted off as fast as possible. Therefore, by employing the substrate processing system 1 and the substrate transfer apparatus 20 provided in the present embodiment, it is possible to shorten the tact required for lift-off while minimizing the deterioration of the yield. Thus, a substrate transfer apparatus and a substrate processing system including the substrate transfer apparatus that can more reliably and effectively prevent electrostatic discharge can be provided.
  • the substrate transfer apparatus 20 is provided with a plurality of surface potential detection sensors 24 as surface potential detection units. There is no need to provide these separately, and the apparatus configuration can be greatly simplified and downsized. Therefore, the manufacturing cost is reduced without complicating and increasing the size of the manufacturing equipment.
  • control unit 30 can individually change the rising speed of the substrate 100 for each of the plurality of substrate processing apparatuses included in the substrate processing system 1. Since it can be adjusted, it is possible to perform processing while optimizing the rising speed of the substrate 100 for each of the plurality of substrate processing apparatuses.
  • the robot hand 21 of the substrate transfer apparatus 20 is provided with the discharge hole 25, and the ionized gas is discharged from the discharge hole 25 toward the substrate 100. Has been. For this reason, the ionized gas is blown to the lower surface 111 of the substrate 100, whereby the charge charged on the substrate 100 can be neutralized and neutralized.
  • the control unit 30 controls the driving of the solenoid valve connected to the ionizer 33 and the compressor 34 based on the output of the surface potential detection sensor 24 to optimize the flow rate of the ionized gas discharged from the discharge hole 25. As a result, it is possible to neutralize the charge on the lower surface 111 of the substrate 100 and eliminate the charge more reliably.
  • the present invention is not limited to this.
  • the peak value V B of the surface potential of the lower surface 111 of the substrate 100 when it is first determined that there is no electrostatic discharge is a threshold value.
  • the presence or absence of electrostatic discharge may be determined by comparing the peak value of the surface potential detected when the substrate is lifted off with the threshold value.
  • 90% of the peak value V B may be used as a threshold value in order to provide a margin.
  • the threshold is set to an arbitrary value and can be fine-tuned manually, it is easy to use. You can also
  • the rising speed in the previous lift-off operation is maintained without resetting the substrate rising speed in the lift-off operation in step S6 is exemplified.
  • the rising speed is set to be 90% of the rising speed of the substrate in the previous lift-off operation in step S6 only immediately after it is first determined that there is no electrostatic discharge in step S5. It may be reset.
  • the rising speed is set to a speed slightly higher than the speed at which electrostatic discharge is determined to occur in advance, and the rising speed is optimized by gradually decreasing the speed.
  • a control flow different from this can be adopted. Specifically, for example, it is possible to optimize the ascending speed by setting the ascending speed to a speed slightly slower than the speed at which it is determined that electrostatic discharge does not occur in advance. It is. In this case, although the tact cannot be sufficiently shortened in the stage of optimization of the rising speed, it is possible to limit the number of substrates that cause electrostatic discharge during optimization to one and to reliably prevent the yield from being lowered. Can do.
  • the control unit 30 is based on a change in the surface potential of the lower surface of the one substrate that is detected when the one substrate is lowered at a predetermined lowering speed, which is detected by the surface potential detection sensor 24. Then, the descending speed of another substrate of the same type that is subsequently lowered is determined. More specifically, the control unit 30 is based on a change in the surface potential of the lower surface of the one substrate that is detected when the one substrate is lowered at a predetermined lowering speed, which is detected by the surface potential detection sensor 24.
  • the presence or absence of electrostatic discharge is determined.
  • the descending speed of the other board of the same type to be lowered next is lowered, and when it is determined that there is no electrostatic discharge, the next descending
  • the lowering speed of the same type of other substrate to be maintained is maintained at the predetermined lowering speed, or is controlled to be set to a lowering speed obtained by adding a predetermined margin to the predetermined lowering speed.
  • FIG. 7 is an enlarged schematic perspective view of a main part of the robot hand of the substrate transfer apparatus according to the second embodiment of the present invention.
  • the extending direction of the support portion 22 (arrows shown in the figure) is provided at both end portions of the support portion 22 of the robot hand 21.
  • a pair of mounting groove portions 26 are provided along the (X direction)
  • electrodes 26a and 26b are provided on both side walls of the mounting groove portion 26
  • surface potential detection sensors 24 are respectively provided on the movable unit 27, and both side walls of the movable unit 27 are provided.
  • electrodes 27a and 27b are provided.
  • the movable unit 27 is sized and shaped to be engaged with the mounting groove 26, and the electrodes 26 a and 26 b are in contact with the electrodes 27 a and 27 b in a state where the movable unit 27 is engaged with the mounting groove 26. It is configured to be.
  • the plurality of movable units 27 can be detachably attached to arbitrary positions of the attachment groove 26 along the extending direction of the support portion 22, and surface potential detection can be performed at the attachment positions.
  • the detection signal of the sensor 24 can be output to the control unit 30.
  • the electrodes 26 a and 26 b may be provided separately along the extending direction as shown in the figure.
  • a plurality of surface potential detection sensors 24 can be arranged at arbitrary positions on the robot hand 21, respectively. Therefore, in addition to the effects described in the first embodiment of the present invention described above, the surface potential detection sensors 24 can be arranged more densely or more evenly in accordance with the size and shape of the substrate 100, and more It is possible to obtain an effect that the surface potential detection sensor 24 can be arranged at a place where electrostatic discharge is likely to occur, and the surface potential of the lower surface 111 of the substrate 100 can be detected with higher accuracy.
  • the movable unit 27 can be configured to be movable on the support portion 22 by a driving mechanism (not shown). With this configuration, the surface potential detection sensor 24 is scanned on the support portion 22 at the time of lift-off or lift-on, so that a wider range of surface potentials can be detected by a smaller number of surface potential detection sensors 24. An effect can also be obtained.
  • the substrate transfer apparatus according to the first and second embodiments of the present invention described above can be used not only in newly installed manufacturing equipment but also in existing manufacturing equipment. It is a thing. In particular, if a self-propelled substrate transfer device is used, it can be used in any place of manufacturing equipment regardless of whether it is new or old, and can be highly versatile.
  • the substrate transfer apparatus according to the first and second embodiments of the present invention described above is incorporated in a manufacturing facility, at what timing (in which process) the substrate (which part) (location) of the substrate in the manufacturing facility It is also possible to investigate whether or not charging is likely to occur. Therefore, even if any ESD countermeasure is taken after the investigation, whether or not the countermeasure is effective by using the substrate transfer apparatus according to the first and second embodiments of the present invention described above. Diagnosis can be made.
  • the substrate transfer apparatus since it becomes possible to variably adjust the transport speed of each substrate, it is possible to transport more.
  • the substrate transfer apparatus has a function of automatically calculating an average tact required for each transfer process. If comprised in this way, it will become possible to confirm productivity for every conveyance process.
  • Substrate processing system 2. Substrate transport cassette, 3. First substrate processing apparatus, 4. Second substrate processing apparatus, 5. Third substrate processing apparatus, 10. Stage, 11. Placement surface, 12. Groove, 20.
  • Substrate transfer apparatus 21.
  • Robot Hand 22 support part, 23 suction pad, 24 surface potential detection sensor, 25 discharge hole, 26 mounting groove part, 26a, 26b electrode, 27 movable unit, 27a, 27b electrode, 30 control part, 31 robot hand drive mechanism, 32 pump 33 ionizer, 34 compressor, 35 storage unit, 36 display unit, 37 operation unit, 100 substrate, 111 lower surface.

Abstract

A substrate transfer device is provided with: a robot hand (21) capable of supporting substrates by being inserted below the substrates; a robot hand raising/lowering mechanism for raising and lowering the robot hand (21); surface potential detection parts (24) that are disposed on the robot hand (21), and that are capable of detecting the surface potential of the lower surfaces of the supported substrates when the substrates are being supported by the robot hand (21); and a control unit that can variably adjust the speed at which the substrates are raised by controlling the driving of the robot hand raising/lowering mechanism. On the basis of changes in the surface potential of the lower surface of a substrate that occur when the substrate is raised at a predetermined speed, said changes being detected by the surface potential detection parts (24), the control unit determines the speed at which to raise other substrates of the same type which are subsequently raised.

Description

基板移載装置およびこれを備えた基板処理システムSubstrate transfer apparatus and substrate processing system provided with the same
　本発明は、ロボットハンドを使用して基板を移載する基板移載装置に関し、また当該基板移載装置と複数の基板処理装置とを備えた基板処理システムに関する。 The present invention relates to a substrate transfer apparatus that transfers a substrate using a robot hand, and also relates to a substrate processing system including the substrate transfer apparatus and a plurality of substrate processing apparatuses.
　液晶パネルや太陽電池モジュール、半導体装置等の製造過程においては、ワークである基板（ガラス基板や半導体基板等）に対して各種の処理を施すために、様々な種類の基板処理装置が基板に対して順次使用される。通常、基板処理装置に対する基板の搬入および搬出には、ロボットハンドを具備した基板移載装置が利用され、当該基板移載装置に具備されたロボットハンドを用いて基板のリフトオフやリフトオン、移送等が行なわれることにより、基板処理装置に対する基板の搬入および搬出が行なわれる。近年においては、製造設備の簡素化や小型化等の観点から、複数の基板処理装置に対する基板の搬入および搬出が一の基板移載装置にて賄われるように構成された基板処理システムが一般化しつつある。 In the manufacturing process of liquid crystal panels, solar cell modules, semiconductor devices, etc., various types of substrate processing apparatuses are applied to substrates in order to perform various types of processing on substrates (glass substrates, semiconductor substrates, etc.) that are workpieces. Are used sequentially. Usually, a substrate transfer apparatus equipped with a robot hand is used for loading and unloading a substrate to and from the substrate processing apparatus, and the substrate can be lifted off, lifted on, transferred, etc. using the robot hand equipped in the substrate transfer apparatus. As a result, the substrate is carried into and out of the substrate processing apparatus. In recent years, from the viewpoint of simplification and downsizing of manufacturing equipment, a substrate processing system configured to cover and carry in and out of a plurality of substrate processing apparatuses with a single substrate transfer apparatus has become common. It is going
　通常、ロボットハンドを具備した基板移載装置を用いて基板を移載する場合には、静電気放電（ＥＳＤ）が発生することを防止するための対策が講じられていることが求められる。静電気放電は、物体に蓄積された電荷が非接触状態にある他の物体に放電を伴って移動する物理的現象のことであり、一般に帯電した物体が他の物体に近接配置された場合に生じるものである。 Usually, when a substrate is transferred using a substrate transfer apparatus equipped with a robot hand, it is required to take measures to prevent the occurrence of electrostatic discharge (ESD). Electrostatic discharge is a physical phenomenon in which the charge accumulated in an object moves with other objects in a non-contact state, and generally occurs when a charged object is placed close to another object. Is.
　上述したロボットハンドを用いての基板の移載に際しては、特に基板のリフトオフ時およびリフトオン時に基板処理装置に設けられたステージと基板とが近接配置された状態になるため、基板およびステージのいずれかまたはその両方が帯電している場合に静電気放電が発生するおそれがある。ここで、静電気放電が発生した場合には、基板上に形成された導体パターンや絶縁膜といった回路構成要素が損傷を受けたり破壊されたりするおそれがあり、その結果、製造後の製品において必要な電気的特性が得られない問題が生じてしまう。特に、基板のリフトオフ時には、剥離帯電と称される物理的現象が発生し易く、この剥離帯電によって基板とステージとの間に高い電位差が生じ、何ら手当てを行なわなかった場合には、上述した静電気放電が高い頻度で発生してしまうことになる。 When transferring a substrate using the robot hand described above, especially when the substrate is lifted off and when the substrate is lifted on, the stage provided in the substrate processing apparatus and the substrate are placed close to each other. Alternatively, electrostatic discharge may occur when both are charged. Here, when electrostatic discharge occurs, circuit components such as conductor patterns and insulating films formed on the substrate may be damaged or destroyed, and as a result, it is necessary for products after manufacture. The problem that electrical characteristics cannot be obtained arises. In particular, when the substrate is lifted off, a physical phenomenon called peeling charging is likely to occur, and this peeling charging causes a high potential difference between the substrate and the stage. Discharging occurs frequently.
　上述した静電気放電に対する対策が講じられた基板処理装置や基板移載装置として、たとえば特開平８－９７１２１号公報（特許文献１）や特開２０００－２１６２２８号公報（特許文献２）、特開２０００－８２７３２号公報（特許文献３）に開示のもの等がある。 As a substrate processing apparatus and a substrate transfer apparatus in which measures against the electrostatic discharge described above are taken, for example, Japanese Patent Application Laid-Open No. 8-97121 (Patent Document 1), Japanese Patent Application Laid-Open No. 2000-216228 (Patent Document 2), and -82732 (Patent Document 3) discloses the above.
　上記特開平８－９７１２１号公報に開示の基板処理装置にあっては、基板が載置されるステージの上方に表面電位計およびイオナイザを配置し、ステージ上に載置された基板の上面の表面電位を表面電位計を用いて検出し、その検出結果に基づいて基板の上面にイオン化された気体をイオナイザを用いて吹き付けることで基板上面の帯電を中和して除電することとし、これにより基板のリフトオフ時に静電気放電が発生することを防止している。 In the substrate processing apparatus disclosed in the above-mentioned JP-A-8-97121, a surface electrometer and an ionizer are arranged above a stage on which a substrate is placed, and the surface of the upper surface of the substrate placed on the stage The electric potential is detected using a surface electrometer, and the ionized gas is sprayed onto the upper surface of the substrate using an ionizer based on the detection result to neutralize the charge on the upper surface of the substrate, thereby eliminating the charge. Prevents electrostatic discharge from occurring during lift-off.
　また、上記特開２０００－２１６２２８号公報に開示の基板処理装置にあっては、基板が載置されるステージの上方に表面電位計を配置するとともに、当該ステージにイオン化された気体を放出するための放出孔を設け、ステージ上に載置された基板の上面の表面電位を表面電位計を用いて検出し、その検出結果に基づいて上記放出孔を介して基板の下面に向けてイオン化された気体を吹き付けることで基板下面の帯電を中和して除電することとし、これにより基板のリフトオフ時に静電気放電が発生することを防止している。 Further, in the substrate processing apparatus disclosed in the above Japanese Patent Laid-Open No. 2000-216228, a surface electrometer is disposed above the stage on which the substrate is placed, and ionized gas is released to the stage. The surface potential of the upper surface of the substrate placed on the stage was detected using a surface potentiometer, and ionized toward the lower surface of the substrate through the discharge hole based on the detection result By discharging the gas, the charge on the lower surface of the substrate is neutralized and the charge is eliminated, thereby preventing electrostatic discharge from occurring when the substrate is lifted off.
　また、上記特開２０００－８２７３２号公報に開示の基板移載装置にあっては、当該基板移載装置に具備されたロボットハンドにイオン化された気体を放出するための放出孔を設け、ロボットハンドによる基板の支持に先立って上記放出孔を介して基板に向けてイオン化された気体を吹き付けることで基板表面の帯電を中和して除電することとし、これにより基板のリフトオフ時に静電気放電が発生することを防止している。 Further, in the substrate transfer apparatus disclosed in the above Japanese Patent Laid-Open No. 2000-82732, the robot hand provided in the substrate transfer apparatus is provided with a discharge hole for discharging ionized gas, and the robot hand Prior to supporting the substrate, the ionized gas is blown toward the substrate through the discharge hole to neutralize the charge on the surface of the substrate, thereby removing static electricity. This causes electrostatic discharge when the substrate is lifted off. To prevent that.
特開平８－９７１２１号公報JP-A-8-97121 特開２０００－２１６２２８号公報JP 2000-216228 A 特開２０００－８２７３２号公報Japanese Patent Laid-Open No. 2000-82732
　しかしながら、上記特開平８－９７１２１号公報および特開２０００－２１６２２８号公報に開示される如くの基板処理装置を含む基板処理システムとした場合には、製造過程において使用される複数の基板処理装置の各々に表面電位計やイオナイザあるいはイオン化された気体を放出するための放出孔を設けることが必要になり、製造設備が複雑化したり大型化したりすることによって製造コストが大幅に嵩んでしまう問題が生じる。特に、近年においては、基板の大型化が飛躍的に進んでおり、製造過程において使用される複数の基板処理装置の各々にこれら表面電位計やイオナイザあるいはイオン化された気体を放出するための放出孔を設けることとした場合には、製造コストの増大は非常に顕著なものとなってしまう。 However, in the case of a substrate processing system including a substrate processing apparatus as disclosed in the above Japanese Patent Application Laid-Open No. 8-97121 and Japanese Patent Application Laid-Open No. 2000-216228, a plurality of substrate processing apparatuses used in the manufacturing process are used. It is necessary to provide a surface electrometer, ionizer, or discharge hole for discharging ionized gas in each of them, resulting in a problem that the manufacturing cost is greatly increased due to complicated and large manufacturing facilities. . In particular, in recent years, the size of the substrate has been dramatically increased, and a discharge hole for discharging the surface potential meter, ionizer, or ionized gas to each of a plurality of substrate processing apparatuses used in the manufacturing process. If it is decided to provide, the increase in manufacturing cost becomes very remarkable.
　一方、上記特開２０００－８２７３２号公報に開示される如くの基板移載装置を含む基板処理システムとした場合には、表面電位計が具備されていない構成であるため、基板に吹き付けるべきイオン化された気体の量や極性等を最適化することができず、かえって基板を帯電させてしまう問題を生じかねない。これを防止するためには、上記特開平８－９７１２１号公報および特開２０００－２１６２２８号公報に開示の如く、基板処理装置のステージの上方に表面電位計を配置し、当該表面電位計と基板移載装置に具備されたイオナイザとを連動させることが考えられるが、その場合には、製造過程において使用される複数の基板処理装置の各々に表面電位計を別途設けることが必要になり、やはり製造設備が複雑化したり大型化したりすることによって製造コストが大幅に嵩んでしまう問題が生じてしまう。 On the other hand, in the case of a substrate processing system including a substrate transfer device as disclosed in the above Japanese Patent Laid-Open No. 2000-82732, since the surface potential meter is not provided, the ionization to be sprayed on the substrate is not performed. In other words, the amount of gas, polarity, and the like cannot be optimized, which may cause a problem of charging the substrate. In order to prevent this, as disclosed in the above-mentioned JP-A-8-97121 and JP-A-2000-216228, a surface electrometer is disposed above the stage of the substrate processing apparatus. It is conceivable to link the ionizer provided in the transfer apparatus, but in that case, it is necessary to separately provide a surface electrometer in each of a plurality of substrate processing apparatuses used in the manufacturing process. A problem that the manufacturing cost increases significantly as the manufacturing equipment becomes complicated or large-sized.
　また、上記特開平８－９７１２１号公報および特開２０００－２１６２２８号公報に開示される基板処理装置にあっては、ステージの上方に表面電位計が配置される構成が採用されているため、表面電位計によって検出される基板の表面電位は、基板の上面の表面電位となる。しかしながら、静電気放電は、対向配置された基板の下面とステージ表面との間の電位差に起因して発生する物理的現象であるため、当該構成を採用したのでは必ずしも基板の下面の表面電位を正確に検出したことにはならず、そのため静電気放電をより確実にかつ効果的に防止するためには、なおその改善が必要である。 Further, in the substrate processing apparatus disclosed in the above-mentioned JP-A-8-97121 and JP-A-2000-216228, a configuration in which a surface electrometer is disposed above the stage is adopted. The surface potential of the substrate detected by the electrometer is the surface potential of the upper surface of the substrate. However, since electrostatic discharge is a physical phenomenon that occurs due to a potential difference between the lower surface of the substrate and the stage surface that are opposed to each other, the surface potential of the lower surface of the substrate is not always accurately determined by adopting this configuration. Therefore, in order to prevent electrostatic discharge more reliably and effectively, the improvement is still necessary.
　したがって、本発明は、上述した問題点を解決すべくなされたものであり、静電気放電をより確実にかつ効果的に防止することができるとともに、製造設備の簡素化および小型化が可能な基板移載装置およびこれを備えた基板処理システムを提供することを目的とする。 Therefore, the present invention has been made to solve the above-described problems, and can prevent the electrostatic discharge more reliably and effectively, and can transfer the substrate that can simplify and downsize the manufacturing equipment. It is an object to provide a mounting apparatus and a substrate processing system including the same.
　本発明に基づく基板移載装置は、複数の基板を順次上昇および下降させることでこれら基板を順次移載するものであって、基板の下方に挿入されることで基板を支持可能なロボットハンドと、上記ロボットハンドを昇降させるためのロボットハンド昇降機構と、上記ロボットハンドに設けられ、当該ロボットハンドにて基板を支持した状態において支持した基板の下面の表面電位を検出可能な表面電位検出部と、上記ロボットハンド昇降機構の駆動を制御することで基板の上昇速度または／および下降速度を可変に調節可能な制御部とを備えている。上記制御部は、上記表面電位検出部にて検出された、一の基板を所定の上昇速度または／および下降速度にて上昇または／および下降させた場合に生じる当該一の基板の下面の表面電位の変化に基づき、その後に上昇または／および下降させる同種の他の基板の上昇速度または／および下降速度を決定する。 A substrate transfer apparatus according to the present invention sequentially transfers a plurality of substrates by raising and lowering a plurality of substrates, and a robot hand capable of supporting a substrate by being inserted below the substrate; A robot hand raising / lowering mechanism for raising and lowering the robot hand; and a surface potential detecting unit provided in the robot hand and capable of detecting the surface potential of the lower surface of the substrate supported by the robot hand. And a controller capable of variably adjusting the ascending speed and / or descending speed of the substrate by controlling the driving of the robot hand lifting mechanism. The control unit detects the surface potential of the lower surface of the one substrate, which is detected when the one substrate is raised or lowered at a predetermined rising speed and / or lowering speed, which is detected by the surface potential detecting unit. Based on this change, the rising speed and / or lowering speed of another substrate of the same type that is subsequently raised or / and lowered is determined.
　上記本発明に基づく基板移載装置にあっては、上記制御部が、上記表面電位検出部にて検出された、一の基板を所定の上昇速度または／および下降速度にて上昇または／および下降させた場合に生じる当該一の基板の下面の表面電位の変化に基づいてその間における静電気放電の有無を判断し、静電気放電が有ったと判断した場合に、次に上昇または／および下降させる同種の他の基板の上昇速度または／および下降速度を下げ、静電気放電が無かったと判断した場合に、次に上昇または／および下降させる同種の他の基板の上昇速度または／および下降速度を上記所定の上昇速度または／および下降速度に維持するか、あるいは上記所定の上昇速度または／および下降速度に所定のマージンが付与された上昇速度または／および下降速度に設定することが好ましい。 In the substrate transfer apparatus according to the present invention, the control unit raises and / or lowers one substrate detected by the surface potential detection unit at a predetermined ascent rate and / or descend rate. Based on the change in the surface potential of the lower surface of the one substrate that occurs when it is caused to occur, the presence or absence of electrostatic discharge in the meantime is determined. When the rising speed and / or lowering speed of the other substrate is reduced and it is determined that there is no electrostatic discharge, the rising speed and / or lowering speed of the other board of the same type to be raised or / and lowered next is increased to the predetermined level. An ascending speed or / and a descending speed that is maintained at a speed or / and a descending speed, or a predetermined margin is added to the predetermined ascending speed or / and the descending speed. Setting it is preferable to.
　上記本発明に基づく基板移載装置にあっては、上記表面電位検出部が、上記ロボットハンドに複数設けられていることが好ましい。 In the substrate transfer apparatus according to the present invention, it is preferable that a plurality of the surface potential detection units are provided in the robot hand.
　上記本発明に基づく基板移載装置にあっては、上記表面電位検出部が、上記ロボットハンドの任意の位置に着脱自在に取付け可能とされていることが好ましい。 In the substrate transfer apparatus according to the present invention, it is preferable that the surface potential detection unit can be detachably attached to an arbitrary position of the robot hand.
　上記本発明に基づく基板移載装置にあっては、上記表面電位検出部が、上記ロボットハンドに移動可能に設けられていることが好ましい。 In the substrate transfer apparatus according to the present invention, it is preferable that the surface potential detection unit is provided movably on the robot hand.
　上記本発明に基づく基板移載装置は、正イオンまたは／および負イオンを生成するイオナイザをさらに備えていることが好ましく、その場合に、上記イオナイザにて生成された正イオンまたは／および負イオンを基板に向けて吹き付けるための放出孔が、上記ロボットハンドに設けられていることが好ましい。 The substrate transfer apparatus according to the present invention preferably further includes an ionizer that generates positive ions and / or negative ions, and in this case, positive ions and / or negative ions generated by the ionizer are used. It is preferable that a discharge hole for spraying toward the substrate is provided in the robot hand.
　本発明に基づく基板処理システムは、上述した本発明に基づく基板移載装置と、基板を処理するための複数の基板処理装置とを備え、上記基板移載装置が、上記複数の基板処理装置に基板を順次搬入および搬出するための部位として構成されてなるものである。 The substrate processing system based on this invention is equipped with the substrate transfer apparatus based on this invention mentioned above, and the several substrate processing apparatus for processing a board | substrate, The said substrate transfer apparatus is set to the said several substrate processing apparatus. It is comprised as a site | part for carrying in and carrying out a board | substrate sequentially.
　上記本発明に基づく基板処理システムにあっては、上記制御部が、上記複数の基板処理装置のそれぞれについて、個別に基板の上昇速度または／および下降速度を可変に調節可能であることが好ましい。 In the substrate processing system according to the present invention, it is preferable that the control unit can individually adjust the substrate rising speed and / or the lowering speed variably for each of the plurality of substrate processing apparatuses.
　本発明によれば、静電気放電をより確実にかつ効果的に防止することができるとともに、製造設備の簡素化および小型化が可能な基板移載装置およびこれを備えた基板処理システムとすることができる。 ADVANTAGE OF THE INVENTION According to this invention, while being able to prevent an electrostatic discharge more reliably and effectively, it can be set as the board | substrate transfer apparatus which can simplify and reduce a manufacturing facility, and can be set as a substrate processing system provided with the same. it can.
本発明の実施の形態１における基板処理システムの概要を示す平面図である。It is a top view which shows the outline | summary of the substrate processing system in Embodiment 1 of this invention. 本発明の実施の形態１における基板移載装置のロボットハンドの概略斜視図である。It is a schematic perspective view of the robot hand of the substrate transfer apparatus in Embodiment 1 of the present invention. 本発明の実施の形態１における基板移載装置の機能ブロックの構成を示す図である。It is a figure which shows the structure of the functional block of the board | substrate transfer apparatus in Embodiment 1 of this invention. 本発明の実施の形態１における基板移載装置を用いた基板のリフトオフ動作を説明するための模式図である。It is a schematic diagram for demonstrating the lift-off operation | movement of the board | substrate using the board | substrate transfer apparatus in Embodiment 1 of this invention. 本発明の実施の形態１における基板移載装置を用いた基板のリフトオフ動作を説明するための模式図である。It is a schematic diagram for demonstrating the lift-off operation | movement of the board | substrate using the board | substrate transfer apparatus in Embodiment 1 of this invention. 本発明の実施の形態１における基板移載装置を用いた基板のリフトオフ動作を説明するための模式図である。It is a schematic diagram for demonstrating the lift-off operation | movement of the board | substrate using the board | substrate transfer apparatus in Embodiment 1 of this invention. 本発明の実施の形態１における基板移載装置の制御部の制御フローを示す図である。It is a figure which shows the control flow of the control part of the board | substrate transfer apparatus in Embodiment 1 of this invention. リフトオフ時における基板の下面の表面電位の変化を示すグラフである。It is a graph which shows the change of the surface potential of the lower surface of a board | substrate at the time of lift-off. 本発明の実施の形態２における基板移載装置のロボットハンドの概略要部拡大斜視図である。It is a general | schematic principal part expansion perspective view of the robot hand of the board | substrate transfer apparatus in Embodiment 2 of this invention.
　以下、本発明の実施の形態について、図を参照して詳細に説明する。なお、以下に示す実施の形態においては、同等または共通部分について図中同一の符号を付し、その説明は個々には繰り返さないこととする。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following embodiments, the same or common parts are denoted by the same reference numerals in the drawings, and the description thereof will not be repeated individually.
　（実施の形態１）
　図１は、本発明の実施の形態１における基板処理システムの概要を示す平面図である。また、図２は、図１に示す基板移載装置のロボットハンドの概略斜視図であり、図３は、図１に示す基板移載装置の機能ブロックの構成を示す図である。まず、これら図１ないし図３を参照して、本実施の形態における基板処理システムおよびこれに具備される基板移載装置の構成について説明する。 (Embodiment 1)
FIG. 1 is a plan view showing an outline of a substrate processing system according to Embodiment 1 of the present invention. 2 is a schematic perspective view of a robot hand of the substrate transfer apparatus shown in FIG. 1, and FIG. 3 is a diagram showing a functional block configuration of the substrate transfer apparatus shown in FIG. First, with reference to these FIG. 1 thru | or FIG. 3, the structure of the substrate processing system in this Embodiment and the substrate transfer apparatus with which this is provided is demonstrated.
　図１に示すように、本実施の形態における基板処理システム１は、第１基板処理装置３、第２基板処理装置４および第３基板処理装置５からなる３つの基板処理装置と、１つの基板移載装置２０とを主として備えている。第１基板処理装置３、第２基板処理装置４および第３基板処理装置５の各々は、ワークである基板１００に対して所定の処理を行なうための装置である。一方、基板移載装置２０は、上記３つの基板処理装置に基板１００を個別に順次搬入および搬出するための装置である。 As shown in FIG. 1, the substrate processing system 1 according to the present embodiment includes three substrate processing apparatuses including a first substrate processing apparatus 3, a second substrate processing apparatus 4, and a third substrate processing apparatus 5, and one substrate. The transfer apparatus 20 is mainly provided. Each of the first substrate processing apparatus 3, the second substrate processing apparatus 4, and the third substrate processing apparatus 5 is an apparatus for performing a predetermined process on the substrate 100 that is a workpiece. On the other hand, the substrate transfer apparatus 20 is an apparatus for sequentially carrying the substrates 100 in and out of the three substrate processing apparatuses.
　本実施の形態における基板処理システム１においては、基板搬送カセット２に収容された基板１００が、基板移載装置２０によって第１基板処理装置３に搬入される。第１基板処理装置３に搬入されて所定の処理が施された後の基板１００は、基板移載装置２０によって第１基板処理装置３から搬出されて第２基板処理装置４に搬入される。また、第２基板処理装置４に搬入されて所定の処理が施された後の基板１００は、基板移載装置２０によって第２基板処理装置４から搬出されて第３基板処理装置５に搬入される。さらに、第３基板処理装置５に搬入されて所定の処理が施された後の基板１００は、基板移載装置２０によって第３基板処理装置５から搬出されて基板搬送カセット２に搬入される。ここで、本実施の形態における基板処理システム１においては、基板搬送カセット２に収容された複数の基板１００が、基板移載装置２０によって順次移載されることにより、複数の基板１００に対して個別に一連の処理が順次実施されることになる。 In the substrate processing system 1 in the present embodiment, the substrate 100 accommodated in the substrate transport cassette 2 is carried into the first substrate processing apparatus 3 by the substrate transfer apparatus 20. The substrate 100 after being loaded into the first substrate processing apparatus 3 and subjected to a predetermined process is unloaded from the first substrate processing apparatus 3 by the substrate transfer apparatus 20 and loaded into the second substrate processing apparatus 4. Further, the substrate 100 after being loaded into the second substrate processing apparatus 4 and subjected to a predetermined process is unloaded from the second substrate processing apparatus 4 by the substrate transfer apparatus 20 and loaded into the third substrate processing apparatus 5. The Further, the substrate 100 after being loaded into the third substrate processing apparatus 5 and subjected to a predetermined process is unloaded from the third substrate processing apparatus 5 by the substrate transfer apparatus 20 and loaded into the substrate transport cassette 2. Here, in the substrate processing system 1 according to the present embodiment, the plurality of substrates 100 accommodated in the substrate transport cassette 2 are sequentially transferred by the substrate transfer device 20, so that the plurality of substrates 100 are transferred. A series of processes are sequentially performed individually.
　図１に示すように、基板移載装置２０は、ロボットハンド２１を有している。当該ロボットハンド２１は、基板１００の下方に挿入されることで基板１００を支持可能なフォーク状の部材からなり、互いに並行して設けられた複数の支持部２２を有している（図２参照）。ロボットハンド２１は、後述するロボットハンド駆動機構３１（図３参照）によってその位置が任意に調節可能となるように移動可能に支持されている。 As shown in FIG. 1, the substrate transfer device 20 has a robot hand 21. The robot hand 21 is made of a fork-like member that can support the substrate 100 by being inserted below the substrate 100, and has a plurality of support portions 22 provided in parallel to each other (see FIG. 2). ). The robot hand 21 is movably supported by a robot hand drive mechanism 31 (see FIG. 3), which will be described later, so that its position can be arbitrarily adjusted.
　一方、第１基板処理装置３、第２基板処理装置４および第３基板処理装置５の各々は、そのチャンバ内に基板１００を載置するためのステージ１０をそれぞれ有している。当該ステージ１０は、基板１００に対して処理を行なう間、当該基板１００を支持するための台である。ここで、ステージ１０の上面である載置面１１（図４Ａないし図４Ｃ等参照）には、基板移載装置２０のロボットハンド２１の支持部２２が挿入可能な溝部１２が複数並行して設けられている。 On the other hand, each of the first substrate processing apparatus 3, the second substrate processing apparatus 4 and the third substrate processing apparatus 5 has a stage 10 for placing the substrate 100 in the chamber. The stage 10 is a stage for supporting the substrate 100 while processing the substrate 100. Here, a plurality of groove portions 12 into which the support portion 22 of the robot hand 21 of the substrate transfer device 20 can be inserted are provided in parallel on the mounting surface 11 (see FIGS. 4A to 4C and the like) which is the upper surface of the stage 10. It has been.
　ここで、第１基板処理装置３、第２基板処理装置４および第３基板処理装置５は、いずれも基板１００に対して何らかの処理を施すものであればよく、たとえば熱処理装置、成膜装置、露光装置、現像装置、洗浄装置、不純物導入装置等がこれらに該当する。 Here, any of the first substrate processing apparatus 3, the second substrate processing apparatus 4, and the third substrate processing apparatus 5 may perform any processing on the substrate 100. For example, a heat treatment apparatus, a film forming apparatus, An exposure apparatus, a developing apparatus, a cleaning apparatus, an impurity introduction apparatus, and the like correspond to these.
　本実施の形態においては、基板処理システムが３つの基板処理装置を備えている場合を例示しているが、基板処理装置の数は特に制限されるものではなく、基板処理システムが少なくとも１つ以上、好ましくは２つ以上の基板処理装置を備えていればよい。また、本実施の形態においては、基板処理システムが１つの基板移載装置を備えている場合を例示しているが、基板移載装置の数は特に制限されるものではなく、基板処理システムが２つ以上の基板移載装置を備えていてもよい。 In the present embodiment, the case where the substrate processing system includes three substrate processing apparatuses is illustrated, but the number of substrate processing apparatuses is not particularly limited, and at least one substrate processing system is provided. Preferably, two or more substrate processing apparatuses may be provided. Further, in the present embodiment, the case where the substrate processing system includes one substrate transfer device is illustrated, but the number of substrate transfer devices is not particularly limited, and the substrate processing system is not limited. Two or more substrate transfer apparatuses may be provided.
　図２に示すように、ロボットハンド２１の支持部２２の上面には、それぞれ複数の吸着パッド２３が設けられている。これら吸着パッド２３は、基板１００をロボットハンド２１にて安定的に吸着保持するための部材であり、各々の吸着パッド２３は、ロボットハンド２１の内部に設けられた連通路を介して後述するポンプ３２（図３参照）に接続されている。吸着パッド２３は、ポンプ３２が駆動されることでその表面において負圧を発生し、当該負圧を利用して支持部２２上に配置された基板１００を吸着保持する。なお、吸着パッド２３としては、一般的な円筒状の吸着パッドやベロー式の吸着パッド、ベルヌーイ式の吸着パッド等、様々な形式のものが利用可能である。 As shown in FIG. 2, a plurality of suction pads 23 are provided on the upper surface of the support portion 22 of the robot hand 21, respectively. These suction pads 23 are members for stably sucking and holding the substrate 100 by the robot hand 21, and each suction pad 23 is a pump which will be described later via a communication path provided inside the robot hand 21. 32 (see FIG. 3). The suction pad 23 generates a negative pressure on the surface thereof when the pump 32 is driven, and sucks and holds the substrate 100 disposed on the support portion 22 using the negative pressure. As the suction pad 23, various types such as a general cylindrical suction pad, a bellows type suction pad, and a Bernoulli type suction pad can be used.
　また、ロボットハンド２１の支持部２２には、それぞれ複数の表面電位検出センサ２４が設けられている。これら表面電位検出センサ２４は、ロボットハンド２１によって支持された基板１００の下面１１１（図４Ａないし図４Ｃ等参照）の表面電位を検出するための表面電位検出部に相当し、各々の表面電位検出センサ２４の検出方向は、いずれもロボットハンド２１の上方を向くように配置されている。なお、本実施の形態においては、ロボットハンド２１によって支持された基板１００が撓むことで基板１００の下面１１１と表面電位検出センサ２４の検出ヘッドとが接触することが回避されるように、表面電位検出センサ２４の検出ヘッドをいずれも支持部２２の上面よりも下方に向けて退避させた位置に配設することとしている。 Further, the support portion 22 of the robot hand 21 is provided with a plurality of surface potential detection sensors 24, respectively. These surface potential detection sensors 24 correspond to a surface potential detection unit for detecting the surface potential of the lower surface 111 (see FIGS. 4A to 4C, etc.) of the substrate 100 supported by the robot hand 21, and each surface potential detection. The detection directions of the sensors 24 are all arranged so as to face the robot hand 21. In the present embodiment, the surface of the substrate 100 is avoided so that the lower surface 111 of the substrate 100 and the detection head of the surface potential detection sensor 24 come into contact with each other when the substrate 100 supported by the robot hand 21 is bent. All of the detection heads of the potential detection sensor 24 are arranged at positions where they are retracted downward from the upper surface of the support portion 22.
　また、ロボットハンド２１の支持部２２の上面には、それぞれ複数の放出孔２５が設けられている。これら放出孔２５は、ロボットハンド２１によって支持された基板１００の下面１１１に向けてイオン化された気体を吹き付けるための部位であり、各々の放出孔２５は、ロボットハンド２１の内部に設けられた通風路を介して後述するイオナイザ３３およびコンプレッサ３４（図３参照）に接続されている。放出孔２５は、イオナイザ３３およびコンプレッサ３４が駆動されることで生成されたイオン化された気体を当該放出孔２５から外部に向けて放出することでこれを基板１００に向けて吹き付ける。 Further, a plurality of discharge holes 25 are provided on the upper surface of the support portion 22 of the robot hand 21. These discharge holes 25 are portions for blowing ionized gas toward the lower surface 111 of the substrate 100 supported by the robot hand 21, and each discharge hole 25 is a ventilation hole provided in the robot hand 21. It is connected to the ionizer 33 and the compressor 34 (refer FIG. 3) mentioned later via the path. The discharge hole 25 blows the ionized gas generated by driving the ionizer 33 and the compressor 34 toward the substrate 100 by discharging the ionized gas from the discharge hole 25 to the outside.
　図３に示すように、基板移載装置２０は、上述したロボットハンド２１、当該ロボットハンド２１に設けられた吸着パッド２３、表面電位検出センサ２４および放出孔２５に加え、さらに制御部３０と、ロボットハンド駆動機構３１と、ポンプ３２と、イオナイザ３３と、コンプレッサ３４と、記憶部３５とを有している。ここで、制御部３０は、基板移載装置２０に含まれる各機能ブロックの駆動を制御することで基板移載装置２０の動作を全体として制御するための部位である。 As shown in FIG. 3, the substrate transfer device 20 includes a control unit 30 in addition to the robot hand 21, the suction pad 23 provided on the robot hand 21, the surface potential detection sensor 24, and the discharge hole 25. A robot hand drive mechanism 31, a pump 32, an ionizer 33, a compressor 34, and a storage unit 35 are included. Here, the control unit 30 is a part for controlling the operation of the substrate transfer apparatus 20 as a whole by controlling the driving of each functional block included in the substrate transfer apparatus 20.
　ロボットハンド駆動機構３１は、上述したロボットハンド２１を移動させるための部位であり、制御部３０によってその駆動が制御される。具体的には、ロボットハンド駆動機構３１は、ロボットハンド２１を水平面内において任意の位置に移動させることが可能なロボットハンド水平移動機構と、ロボットハンド２１を鉛直方向に沿って任意の位置に移動させることが可能なロボットハンド昇降機構と、ロボットハンド２１を旋回させることが可能なロボットハンド旋回機構とを少なくとも含んでいる。これにより、ロボットハンド駆動機構３１は、制御部３０から入力される制御信号に基づいてロボットハンド２１を任意の向きで３次元的に任意の位置に移動させる。なお、ロボットハンド駆動機構３１は、制御部３０によって、ロボットハンド２１の移動速度（上昇速度または／および下降速度を含む）が搬送する基板１枚毎に可変に制御され得るように構成されている。 The robot hand drive mechanism 31 is a part for moving the robot hand 21 described above, and its drive is controlled by the control unit 30. Specifically, the robot hand drive mechanism 31 moves the robot hand 21 to an arbitrary position in the horizontal plane, and moves the robot hand 21 to an arbitrary position along the vertical direction. A robot hand raising / lowering mechanism capable of rotating the robot hand 21 and a robot hand turning mechanism capable of rotating the robot hand 21. Thereby, the robot hand drive mechanism 31 moves the robot hand 21 to an arbitrary position three-dimensionally in an arbitrary direction based on a control signal input from the control unit 30. The robot hand drive mechanism 31 is configured so that the control unit 30 can variably control the moving speed (including the ascending speed and / or the descending speed) of the robot hand 21 for each substrate to be transported. .
　ポンプ３２は、上述した吸着パッド２３に負圧を生じさせるための部位であり、制御部３０によってその駆動が制御される。具体的には、ポンプ３２は、上述したロボットハンド２１に設けられた連通路を介して吸着パッド２３に接続されている。ここで、ポンプ３２と吸着パッド２３との間には、図示しない負圧維持用の電磁弁と排気用の電磁弁とが配設されており、これら電磁弁は、制御部３０によってその動作が制御される。ポンプ３２は、負圧維持用の電磁弁が開放されてポンプ３２と吸着パッド２３とが連通されることで吸着パッド２３の吸着面に負圧を生じさせ、これにより基板１００が吸着される。また、負圧維持用の電磁弁が閉塞されてポンプ３２と吸着パッド２３とが非連通とされることで当該負圧が維持され、基板１００を吸着した状態が維持される。一方、排気用の電磁弁が開放されることで吸着パッド２３の吸着面において生じていた上記負圧が消滅し、これにより基板１００の吸着が解除される。これにより、制御部３０から入力される制御信号に基づいて、ロボットハンド２１上に載置された基板１００の支持および支持の解除が行なわれる。 The pump 32 is a part for generating a negative pressure in the above-described suction pad 23, and its drive is controlled by the control unit 30. Specifically, the pump 32 is connected to the suction pad 23 via the communication path provided in the robot hand 21 described above. Here, an electromagnetic valve for maintaining negative pressure and an electromagnetic valve for exhaust (not shown) are disposed between the pump 32 and the suction pad 23, and these solenoid valves are operated by the control unit 30. Be controlled. The pump 32 opens the negative pressure maintaining electromagnetic valve and causes the pump 32 and the suction pad 23 to communicate with each other, thereby generating a negative pressure on the suction surface of the suction pad 23, whereby the substrate 100 is sucked. Further, the negative pressure maintaining electromagnetic valve is closed and the pump 32 and the suction pad 23 are not communicated with each other, so that the negative pressure is maintained and the state where the substrate 100 is sucked is maintained. On the other hand, when the exhaust solenoid valve is opened, the negative pressure generated on the suction surface of the suction pad 23 disappears, whereby the suction of the substrate 100 is released. Thereby, based on the control signal input from the control unit 30, the substrate 100 placed on the robot hand 21 is supported and released.
　イオナイザ３３およびコンプレッサ３４は、上述した放出孔２５からイオン化された気体を放出させるための部位であり、いずれも制御部３０によってその駆動が制御される。具体的には、コンプレッサ３４は、上述したロボットハンド２１に設けられた通風路を介して放出孔２５に接続されている。ここで、コンプレッサ３４と放出孔２５との間には、図示しない電磁弁が配設されており、当該電磁弁は、制御部３０によってその動作が制御される。コンプレッサ３４は、電磁弁が開放されてコンプレッサ３４と放出孔２５とが連通されることで放出孔２５から外部に向けて圧縮気体を放出させる。一方、電磁弁が閉塞されてコンプレッサ３４と放出孔２５とが非連通とされることにより、放出孔２５からの圧縮気体の放出が停止される。イオナイザ３３は、上述した通風路の途中位置に設けられており、駆動することで正イオンおよび負イオンを生成する。これにより、制御部３０から入力される制御信号に基づいて、放出孔２５から基板１００に向けてのイオン化された気体の放出および放出の停止が行なわれる。なお、イオナイザ３３およびコンプレッサ３４は、常時駆動した状態とされることが好ましく、そのように制御すれば、電磁弁の開放直後においてイオン化された気体を直ちに基板１００に向けて吹き付けることが可能になる。なお、電磁弁が閉塞された状態においては、イオナイザ３３およびコンプレッサ３４を低速運転としてもよい。 The ionizer 33 and the compressor 34 are portions for discharging the ionized gas from the discharge hole 25 described above, and the drive of each is controlled by the control unit 30. Specifically, the compressor 34 is connected to the discharge hole 25 via the ventilation path provided in the robot hand 21 described above. Here, an electromagnetic valve (not shown) is disposed between the compressor 34 and the discharge hole 25, and the operation of the electromagnetic valve is controlled by the control unit 30. The compressor 34 releases the compressed gas from the discharge hole 25 to the outside by opening the electromagnetic valve and communicating the compressor 34 with the discharge hole 25. On the other hand, the discharge of the compressed gas from the discharge hole 25 is stopped by closing the electromagnetic valve and disabling the compressor 34 and the discharge hole 25. The ionizer 33 is provided in the middle of the above-described ventilation path, and generates positive ions and negative ions by being driven. Thereby, based on the control signal input from the control part 30, discharge | release of the ionized gas toward the board | substrate 100 from the discharge | release hole 25 and stop of discharge | release are performed. It is preferable that the ionizer 33 and the compressor 34 are always driven. If controlled in this way, the ionized gas can be immediately blown toward the substrate 100 immediately after the electromagnetic valve is opened. . In the state where the solenoid valve is closed, the ionizer 33 and the compressor 34 may be operated at a low speed.
　記憶部３５は、基板移載装置２０に各種の動作を実行させるためのプログラムが予め記憶された部位であり、制御部３０は、当該プログラムを読み出してこれに基づいて各機能ブロックを制御する。これにより、基板移載装置２０は、状況に応じた動作を実行することになる。また、記憶部３５は、後述する基板１００のリフトオン時およびリフトオフ時において表面電位検出センサ２４によって検出された情報を一時的に記憶したり、当該基板１００のリフトオン時およびリフトオフ時における基板１００の上昇速度または／および下降速度を記憶したりする部位でもある。 The storage unit 35 is a part in which a program for causing the substrate transfer apparatus 20 to execute various operations is stored in advance, and the control unit 30 reads the program and controls each functional block based on the program. Thereby, the substrate transfer device 20 performs an operation according to the situation. The storage unit 35 temporarily stores information detected by the surface potential detection sensor 24 when the substrate 100 described later is lifted on and lifted off, and the substrate 100 is lifted when the substrate 100 is lifted on and lifted off. It is also a part that memorizes the speed or / and the descending speed.
　制御部３０は、表面電位検出センサ２４によって検出された情報に基づいて各種の演算処理を行なうための演算部や、当該演算部における演算結果に基づいて各種の判断処理を行なう判断部等を含んでいる。当該演算部および判断部においては、たとえば後述する図５に示す制御フローにおける演算処理や判断処理が実行される。 The control unit 30 includes a calculation unit for performing various calculation processes based on information detected by the surface potential detection sensor 24, a determination unit for performing various determination processes based on calculation results in the calculation unit, and the like. It is out. In the calculation unit and the determination unit, for example, calculation processing and determination processing in a control flow shown in FIG.
　上述したように、制御部３０は、各機能ブロックに電気的に接続されており、基板移載装置２０の動作を全体として制御する。具体的には、制御部３０は、上述したように、表面電位検出センサ２４から出力される信号を受け付けたり、ロボットハンド駆動機構３１、ポンプ３２、イオナイザ３３、コンプレッサ３４、図示しない電磁弁等を駆動させるための各種信号を生成してこれを出力したり、記憶部３５に記憶されたプログラムを読み出して実行したり、各種情報を記憶部に３５に記憶させたりすることで、基板移載装置２０の動作を全体として制御する。 As described above, the control unit 30 is electrically connected to each functional block, and controls the operation of the substrate transfer apparatus 20 as a whole. Specifically, as described above, the control unit 30 receives a signal output from the surface potential detection sensor 24, or includes a robot hand drive mechanism 31, a pump 32, an ionizer 33, a compressor 34, an electromagnetic valve (not shown), and the like. Generate and output various signals for driving, read and execute programs stored in the storage unit 35, and store various types of information in the storage unit 35, thereby transferring the substrate. 20 operations are controlled as a whole.
　なお、図３に示すように、基板移載装置２０は、さらに基板移載装置２０の動作状態や基板搬送時の平均タクト、基板面内における帯電量の分布を示すマップやヒストグラムデータ等の表示を行なう表示部３６と、表面電位のスペック設定等の各種の操作を行なうための操作部３７とをさらに備えている。これら表示部３６および操作部３７は、いずれも制御部３０に電気的に接続され、それぞれ制御部３０によってその表示動作が制御されたり、ユーザの命令やユーザが入力した情報等を制御部３０に出力したりする。 As shown in FIG. 3, the substrate transfer apparatus 20 further displays a map, histogram data, and the like indicating the operating state of the substrate transfer apparatus 20, the average tact during the substrate transfer, and the distribution of the charge amount in the substrate plane. Is further provided with a display unit 36 and an operation unit 37 for performing various operations such as surface potential specification setting. The display unit 36 and the operation unit 37 are both electrically connected to the control unit 30, the display operation of each is controlled by the control unit 30, user commands, information input by the user, and the like to the control unit 30. Or output.
　図４Ａないし図４Ｃは、本実施の形態における基板移載装置を用いた基板のリフトオフ動作を説明するための模式図である。次に、これら図４Ａないし図４Ｃを参照して、本実施の形態における基板移載装置を用いた基板のリフトオフ動作について説明する。 4A to 4C are schematic diagrams for explaining the lift-off operation of the substrate using the substrate transfer apparatus in the present embodiment. Next, with reference to these FIG. 4A thru | or FIG. 4C, the lift-off operation | movement of the board | substrate using the board | substrate transfer apparatus in this Embodiment is demonstrated.
　図４Ａに示すように、基板１００がステージ１０上に載置された状態においては、基板１００の下面１１１の大部分がステージ１０の載置面１１に接触した状態にある。この状態において、基板１００をリフトオフするためには、以下の手順が採られる。 As shown in FIG. 4A, when the substrate 100 is placed on the stage 10, most of the lower surface 111 of the substrate 100 is in contact with the placement surface 11 of the stage 10. In this state, in order to lift off the substrate 100, the following procedure is employed.
　まず、図４Ｂに示すように、ステージ１０の載置面１１に設けられた溝部１２にロボットハンド２１の支持部２２が挿入され、この状態においてポンプ３２に接続された電磁弁が開放される。これにより、基板１００が吸着パッド２３によって吸着保持され、基板１００がロボットハンド２１によって安定的に支持されることになる。 First, as shown in FIG. 4B, the support portion 22 of the robot hand 21 is inserted into the groove portion 12 provided on the mounting surface 11 of the stage 10, and in this state, the electromagnetic valve connected to the pump 32 is opened. As a result, the substrate 100 is sucked and held by the suction pad 23, and the substrate 100 is stably supported by the robot hand 21.
　次に、図４Ｃに示すように、ロボットハンド昇降機構が駆動されることによってロボットハンド２１が図中矢印Ｚ方向に沿って鉛直上方に移動させられる。これにより、基板１００がステージ１０から離脱して上昇することになり、当該動作に伴って基板１００がステージ１０からリフトオフされることになる。 Next, as shown in FIG. 4C, when the robot hand lifting mechanism is driven, the robot hand 21 is moved vertically upward along the arrow Z direction in the figure. As a result, the substrate 100 separates from the stage 10 and rises, and the substrate 100 is lifted off from the stage 10 in accordance with the operation.
　このとき、図４Ｃに示すように、基板１００の下面１１１には、剥離帯電に起因して電荷が帯電することになり、これに伴ってステージ１０の載置面１１には、基板１００の下面１１１に帯電した電荷とは異なる極性の電荷が帯電することになる。その際、基板１００の下面１１１の電荷の帯電量が、基板１００の下面１１１とステージ１０の載置面１１との間の距離の関係においてある値を超えた場合（すなわち、基板１００の下面１１１とステージ１０の載置面１１との間の電位差が所定の電位差以上となった場合）には、静電気放電が生じてしまうことになる。なお、図４Ｃにおいては、基板１００の下面１１１にプラスの電荷が帯電し、ステージ１０の載置面１１にマイナスの電荷が帯電した場合を模式的に例示しているが、場合によって（たとえばステージの材質等によって）これら帯電する電荷の極性が入れ替わることも当然にある。 At this time, as shown in FIG. 4C, the lower surface 111 of the substrate 100 is charged with electric charges due to peeling charging, and accordingly, the placement surface 11 of the stage 10 is charged with the lower surface of the substrate 100. A charge having a polarity different from the charge charged to 111 is charged. At that time, when the charge amount of the lower surface 111 of the substrate 100 exceeds a certain value in relation to the distance between the lower surface 111 of the substrate 100 and the mounting surface 11 of the stage 10 (that is, the lower surface 111 of the substrate 100). When the potential difference between the stage 10 and the mounting surface 11 of the stage 10 is equal to or greater than a predetermined potential difference), electrostatic discharge will occur. FIG. 4C schematically illustrates the case where a positive charge is charged on the lower surface 111 of the substrate 100 and a negative charge is charged on the mounting surface 11 of the stage 10. Of course, the polarity of these charged charges may change.
　ここで、基板１００の下面１１１における電荷の帯電量およびその極性は、当該ステージ１０が設置された基板処理装置において実施される処理の種類や、基板１００の形状、サイズ、組成等によって異なるものの、一の基板処理装置において同種の基板（形状やサイズ、組成等が同じ基板）が処理される限りにおいては、ほぼ同じになる。したがって、本実施の形態の如くの基板処理システム１においては、基板１００のリフトオフ時における基板１００の下面１１１に生じる電荷の帯電量およびその極性は、それぞれ種類の異なる複数の基板処理装置毎に（すなわち、第１基板処理装置３、第２基板処理装置４および第３基板処理装置５毎に）同じになることになる。 Here, although the charge amount and the polarity of the charge on the lower surface 111 of the substrate 100 vary depending on the type of processing performed in the substrate processing apparatus in which the stage 10 is installed, the shape, size, composition, etc. of the substrate 100, As long as the same type of substrate (substrate having the same shape, size, composition, etc.) is processed in one substrate processing apparatus, the same is obtained. Therefore, in the substrate processing system 1 as in the present embodiment, the charge amount and the polarity of charges generated on the lower surface 111 of the substrate 100 when the substrate 100 is lifted off are different for each of a plurality of different types of substrate processing apparatuses ( That is, it becomes the same for every 1st substrate processing apparatus 3, the 2nd substrate processing apparatus 4, and the 3rd substrate processing apparatus 5.
　一方で、静電気放電が生じるか否かについて、基板１００の上昇速度が深く関係することが知られている。上述したように、静電気放電が生じるか否かは、基板１００の下面１１１とステージ１０の載置面１１との間の距離と、当該距離における基板１００の下面１１１とステージ１０の載置面１１との間の電位差とによって決まる。ここで、この距離と電位差の関係に基板１００の上昇速度が関係し、基板１００の上昇速度を比較的速く設定した場合には、基板１００の移動とともに変化する上記電位差が極端に増加してしまうことになり、基板１００の上昇速度を比較的遅く設定した場合には、基板１００の移動とともに変化する上記電位差の増加が抑制できることになる。 On the other hand, it is known that the rising speed of the substrate 100 is deeply related to whether or not electrostatic discharge occurs. As described above, whether or not electrostatic discharge occurs depends on the distance between the lower surface 111 of the substrate 100 and the mounting surface 11 of the stage 10 and the lower surface 111 of the substrate 100 and the mounting surface 11 of the stage 10 at the distance. And the potential difference between the two. Here, the relationship between the distance and the potential difference is related to the rising speed of the substrate 100, and when the rising speed of the substrate 100 is set relatively high, the potential difference that changes as the substrate 100 moves increases extremely. In other words, when the rising speed of the substrate 100 is set to be relatively slow, an increase in the potential difference that changes with the movement of the substrate 100 can be suppressed.
　当該観点に照らせば、基板１００の上昇速度を十分に遅くすれば静電気放電の発生を確実に防止することができることになるものの、その反面、リフトオフに要するタクトが必要以上に長くなってしまい、生産効率の大幅な低下を招来してしまうことになる。そこで、本実施の形態における基板処理システム１およびこれに具備される基板移載装置２０においては、後述する制御を行なうことにより、静電気放電の発生を防止しつつ生産効率の低下の防止を図っている。以下においては、この点について、図５および図６を参照して詳細に説明する。 In light of this point of view, if the rising speed of the substrate 100 is sufficiently slowed, the occurrence of electrostatic discharge can be surely prevented, but on the other hand, the tact required for lift-off becomes longer than necessary, and production This will cause a significant decrease in efficiency. In view of this, in the substrate processing system 1 and the substrate transfer apparatus 20 included in the substrate processing system 1 according to the present embodiment, the control described later is performed to prevent the production efficiency from being lowered while preventing the occurrence of electrostatic discharge. Yes. Hereinafter, this point will be described in detail with reference to FIGS. 5 and 6.
　図５は、本実施の形態における基板移載装置の制御部の制御フローを示す図であり、図６は、リフトオフ時における基板の下面の表面電位の変化を示すグラフである。なお、図５に示す制御フローは、一の基板処理装置について制御部が行なうリフトオフ動作に関する具体的な制御のみを抜き出してこれを制御フローとして図示したものである。 FIG. 5 is a diagram showing a control flow of the control unit of the substrate transfer apparatus according to the present embodiment, and FIG. 6 is a graph showing a change in the surface potential of the lower surface of the substrate during lift-off. Note that the control flow shown in FIG. 5 illustrates only specific control related to the lift-off operation performed by the control unit for one substrate processing apparatus, and illustrates this as a control flow.
　本実施の形態においては、表面電位検出センサ２４を基板移載装置２０に設け、リフトオフ時における表面電位検出センサ２４の出力に基づいて、制御部３０において基板１００とステージ１０との間に静電気放電が生じたか否かを判断し、この判断結果に基づいてその後に行なう同種の他の基板１００の上昇速度を制御部３０が決定するようにし、これにより静電気放電の発生を防止しつつ生産効率の低下の防止を図っている。 In the present embodiment, the surface potential detection sensor 24 is provided in the substrate transfer device 20, and electrostatic discharge is generated between the substrate 100 and the stage 10 in the control unit 30 based on the output of the surface potential detection sensor 24 at the time of lift-off. Based on the determination result, the controller 30 determines the subsequent rising speed of the other substrate 100 of the same type, thereby preventing the occurrence of electrostatic discharge and improving the production efficiency. We are trying to prevent the decline.
　具体的には、図５に示すように、制御部３０は、まず記憶部３５に記憶された上昇速度を読み出し、これを初回のリフトオフ動作における基板の上昇速度に設定する（ステップＳ１）。ここで、記憶部３５に予め記憶された上昇速度としては、好ましくは経験的に静電気放電が生じると判断される速度よりも、僅かに早い速度とする。 Specifically, as shown in FIG. 5, the control unit 30 first reads the ascending speed stored in the storage unit 35 and sets it as the ascending speed of the substrate in the first lift-off operation (step S1). Here, the rising speed stored in advance in the storage unit 35 is preferably a slightly higher speed than the speed at which electrostatic discharge is determined to occur empirically.
　次に、制御部３０は、リフトオフすべき基板が有るか否かを判断し（ステップＳ２）、リフトオフすべき基板が有ると判断した場合（ステップＳ２においてＹＥＳの場合）に、後述するステップＳ３に移行し、リフトオフすべき基板が無いと判断した場合（ステップＳ２においてＮＯの場合）に、一連の動作を終了する。なお、リフトオフすべき基板が有るか否かについては、適宜の位置に設けた基板検出センサ等を用いれば、その検出が可能である。 Next, the control unit 30 determines whether there is a substrate to be lifted off (step S2). When it is determined that there is a substrate to be lifted off (in the case of YES in step S2), the control unit 30 proceeds to step S3 described later. When it is determined that there is no substrate to be lifted off (NO in step S2), the series of operations is terminated. Whether or not there is a substrate to be lifted off can be detected by using a substrate detection sensor or the like provided at an appropriate position.
　ステップＳ３において、制御部３０は、ロボットハンド昇降機構を駆動することでリフトオフ動作を行なう。その際、制御部３０は、設定した上昇速度にて基板１００を上昇させるとともに、上述した表面電位検出センサ２４から入力される情報を取得し、これを時系列データとして記憶部３５に一時的に記憶する。 In step S3, the control unit 30 performs a lift-off operation by driving the robot hand lifting mechanism. At that time, the control unit 30 raises the substrate 100 at the set ascending speed, acquires information input from the surface potential detection sensor 24 described above, and temporarily stores it in the storage unit 35 as time-series data. Remember.
　次に、制御部３０は、リフトオフ動作が完了した時点で記憶部３５に一時的に記憶していた時系列データの読み込みを行い、読み込んだ時系列データに基づいてリフトオフ時に静電気放電が有ったか否かを判断する（ステップＳ４）。その際の制御部３０の判断手法としては、たとえば以下の手法が利用できる。 Next, the control unit 30 reads the time-series data temporarily stored in the storage unit 35 at the time when the lift-off operation is completed, and whether there was an electrostatic discharge at the time of lift-off based on the read time-series data. It is determined whether or not (step S4). As a determination method of the control unit 30 at that time, for example, the following method can be used.
　図６に示すように、静電気放電が有った場合には、基板１００のリフトオフ開始時刻ｔ０から静電気放電が発生する時刻ｔ１Aまでの間、基板１００の下面１１１の表面電位は大きく上昇し、その後リフトオフ終了時刻ｔ２Aまでの間、基板１００の下面１１１の表面電位は下降する。ここで、静電気放電が発生した時刻ｔ１A以降においては、その後極短時間の間に基板１００の下面１１１の表面電位が大幅に下降する特徴的な変化が見られる。これは、静電気放電が発生することによって基板１００とステージ１０との間で電荷の移動が生じたためであり、当該表面電位の下降は、その後の表面電位の下降とその減少率（変化率）において十分に区別できるものである。 As shown in FIG. 6, when there is electrostatic discharge, the surface potential of the lower surface 111 of the substrate 100 greatly increases from the lift-off start time t0 of the substrate 100 to the time t1 A when the electrostatic discharge occurs, during subsequent to lift-off the end time t2 a, the surface potential of the lower surface 111 of the substrate 100 is lowered. Here, after time t1 A when the electrostatic discharge has occurred, a characteristic change is seen in which the surface potential of the lower surface 111 of the substrate 100 drops significantly in a very short time thereafter. This is because charge transfer occurs between the substrate 100 and the stage 10 due to the occurrence of electrostatic discharge. The decrease in the surface potential is caused by the subsequent decrease in the surface potential and the decrease rate (change rate). It can be distinguished sufficiently.
　一方、静電気放電が無かった場合には、基板１００のリフトオフ開始時刻ｔ０からリフトオフ終了時刻ｔ２Bまでの間、基板１００の下面１１１の表面電位は、静電気放電が有った場合に比べてなだらかに上昇してその後なだらかに下降する。ここで、基板１００の下面１１１の表面電位のピーク時（時刻ｔ１B）の直後においても、静電気放電が有った場合の如くの上述した表面電位の特徴的な変化は見られず、その減少率（変化率）の急激な変化は見られない。 On the other hand, when the electrostatic discharge was not, during the lift-off start time t0 of the substrate 100 to lift off the end time t2 B, the surface potential of the lower surface 111 of the substrate 100, gently as compared with the case where there is electrostatic discharge It rises and then falls gently. Here, immediately after the peak of the surface potential of the lower surface 111 of the substrate 100 (time t1 B ), the above-described characteristic change of the surface potential as in the case of electrostatic discharge is not observed, and the decrease There is no sudden change in rate (rate of change).
　したがって、制御部３０において、複数の表面電位検出センサ２４を用いて取得した時系列データをそれぞれ時間で微分することで減少率（変化率）を算出し、予め定めた減少率（変化率）の閾値（当該閾値は経験的に設定すればよい）と実際に算出された減少率（変化率）とを比較する等の演算処理および比較処理を行なうことにより、リフトオフ時において静電気放電が有ったか否かを判断することが可能になる。なお、静電気放電は、一般的に局所的に発生する場合が多く、上記判断においては、複数の表面電位検出センサ２４によって取得された時系列データのすべてについての判断を行い、そのうちのいずれか１つに静電気放電が有ったことを示すデータが含まれている場合に静電気放電があったと判断すればよい。 Therefore, the control unit 30 calculates the reduction rate (change rate) by differentiating the time series data acquired by using the plurality of surface potential detection sensors 24 with respect to time, and the predetermined reduction rate (change rate) is obtained. Whether there was electrostatic discharge during lift-off by performing arithmetic processing and comparison processing such as comparing the threshold (the threshold may be set empirically) and the actually calculated decrease rate (change rate) It becomes possible to determine whether or not. In general, electrostatic discharge often occurs locally, and in the above determination, all the time-series data acquired by the plurality of surface potential detection sensors 24 are determined, and one of them is selected. It may be determined that there has been electrostatic discharge when data indicating that there has been electrostatic discharge is included.
　次に、図５に示すように、ステップＳ４において静電気放電が有ったと判断した場合（ステップＳ４においてＹＥＳの場合）には、制御部３０は、リフトオフ動作における基板の上昇速度を再設定する（ステップＳ５）。その際、制御部３０は、再設定した上昇速度を記憶部３５に記憶させ、その後ステップＳ２に戻る。ここで、再設定する基板の上昇速度としては、前回のリフトオフ動作における基板の上昇速度よりも遅い速度とすればよく、たとえば前回のリフトオフ動作における基板の上昇速度の９割の速度にする等、どの程度遅く再設定するかは適宜決定すればよい。なお、当該上昇速度の減速については、記憶部３５に記憶されたプログラムによって決定され、当該プログラムを適宜変更することで自由にその設定が可能となる。 Next, as shown in FIG. 5, when it is determined in step S4 that electrostatic discharge has occurred (YES in step S4), the control unit 30 resets the substrate rising speed in the lift-off operation ( Step S5). In that case, the control part 30 memorize | stores the reset ascending speed in the memory | storage part 35, and returns to step S2 after that. Here, the rising speed of the substrate to be reset may be a speed slower than the rising speed of the substrate in the previous lift-off operation, for example, 90% of the rising speed of the substrate in the previous lift-off operation, How late the resetting may be determined as appropriate. The deceleration of the ascending speed is determined by a program stored in the storage unit 35, and can be freely set by appropriately changing the program.
　一方、ステップＳ４において静電気放電が無かったと判断した場合（ステップＳ４においてＮＯの場合）には、制御部３０は、リフトオフ動作における基板の上昇速度の再設定を行なうことなく前回のリフトオフ動作における基板の上昇速度を維持し（ステップＳ６）、その後ステップＳ２に戻る。 On the other hand, if it is determined in step S4 that there is no electrostatic discharge (NO in step S4), control unit 30 does not reset the substrate rising speed in the lift-off operation, and does not reset the substrate in the previous lift-off operation. The rising speed is maintained (step S6), and then the process returns to step S2.
　なお、上記制御フローとすることにより、制御部３０は、初回を除く２回目以降のリフトオフ動作（ステップＳ３）において、ステップＳ５において再設定された基板の上昇速度か、あるいはステップＳ６において維持された基板の上昇速度のいずれかを記憶部３５から読み出してこれを当該リフトオフ動作の際の基板の上昇速度に設定することになる。 By using the control flow described above, the control unit 30 maintains the substrate rising speed reset in step S5 or maintained in step S6 in the second and subsequent lift-off operations (step S3) except for the first time. Any one of the rising speeds of the substrate is read from the storage unit 35, and this is set as the rising speed of the substrate in the lift-off operation.
　以上において説明した制御フローを採用することにより、制御部３０は、表面電位検出センサ２４にて検出された、一の基板を所定の上昇速度にて上昇させた場合に生じる当該一の基板の下面の表面電位の変化に基づき、その後に上昇させる同種の他の基板の上昇速度を決定することになる。より詳細には、制御部３０は、表面電位検出センサ２４にて検出された、一の基板を所定の上昇速度にて上昇させた場合に生じる当該一の基板の下面の表面電位の変化に基づいてその間における静電気放電の有無を判断し、静電気放電が有ったと判断した場合に、次に上昇させる同種の他の基板の上昇速度を下げ、静電気放電が無かったと判断した場合に、次に上昇させる同種の他の基板の上昇速度を上記所定の上昇速度に維持するように制御することになる。 By adopting the control flow described above, the control unit 30 causes the lower surface of the one substrate to be generated when the one substrate is raised at a predetermined rising speed, which is detected by the surface potential detection sensor 24. Based on the change in surface potential, the rising speed of another substrate of the same type to be subsequently raised is determined. More specifically, the control unit 30 is based on a change in the surface potential of the lower surface of the one substrate that is detected when the one substrate is raised at a predetermined rising speed, which is detected by the surface potential detection sensor 24. In the meantime, the presence or absence of electrostatic discharge is determined. When it is determined that there is electrostatic discharge, the rising speed of another substrate of the same type to be raised next is reduced, and when it is determined that there is no electrostatic discharge, the next increase Control is performed so that the rising speed of another substrate of the same type to be maintained is maintained at the predetermined rising speed.
　したがって、複数の基板１００を順次リフトオフする場合において、最初の幾つかの基板については、静電気放電が生じるものの、その後にリフトオフする基板については、静電気放電が生じずかつ静電気放電が生じない範囲で可能な限り早い速度での基板のリフトオフが可能になる。したがって、本実施の形態における基板処理システム１およびこれに具備される基板移載装置２０を採用することにより、歩留まりの悪化を最小限に抑制しつつリフトオフに要するタクトを短縮することが可能になり、静電気放電をより確実にかつ効果的に防止できる基板移載装置およびこれを備えた基板処理システムとすることができる。 Therefore, in the case where the plurality of substrates 100 are lifted off sequentially, the first several substrates may be electrostatically discharged, but the substrates that are subsequently lifted off may be within a range in which electrostatic discharge does not occur and electrostatic discharge does not occur. The substrate can be lifted off as fast as possible. Therefore, by employing the substrate processing system 1 and the substrate transfer apparatus 20 provided in the present embodiment, it is possible to shorten the tact required for lift-off while minimizing the deterioration of the yield. Thus, a substrate transfer apparatus and a substrate processing system including the substrate transfer apparatus that can more reliably and effectively prevent electrostatic discharge can be provided.
　また、上述した本実施の形態における基板処理システム１にあっては、基板移載装置２０に表面電位検出部としての複数の表面電位検出センサ２４が設けられているため、基板処理装置の各々に別途これらを設ける必要がなく、装置構成を大幅に簡素化および小型化することができる。したがって、製造設備が複雑化および大型化することもなく、製造コストの低減が図られることになる。 Further, in the substrate processing system 1 according to the present embodiment described above, the substrate transfer apparatus 20 is provided with a plurality of surface potential detection sensors 24 as surface potential detection units. There is no need to provide these separately, and the apparatus configuration can be greatly simplified and downsized. Therefore, the manufacturing cost is reduced without complicating and increasing the size of the manufacturing equipment.
　加えて、上述した本実施の形態における基板処理システム１にあっては、制御部３０が当該基板処理システム１に含まれる複数の基板処理装置のそれぞれについて、個別に基板１００の上昇速度を可変に調節可能であるため、複数の基板処理装置のそれぞれについて基板１００の上昇速度を最適化して処理を行なうことが可能になる。 In addition, in the substrate processing system 1 according to the present embodiment described above, the control unit 30 can individually change the rising speed of the substrate 100 for each of the plurality of substrate processing apparatuses included in the substrate processing system 1. Since it can be adjusted, it is possible to perform processing while optimizing the rising speed of the substrate 100 for each of the plurality of substrate processing apparatuses.
　なお、本実施の形態においては、上述したように基板移載装置２０のロボットハンド２１に放出孔２５を設け、当該放出孔２５からイオン化された気体が基板１００に向けて放出されるように構成されている。そのため、イオン化された気体は、基板１００の下面１１１に吹き付けられることになり、これにより基板１００に帯電した電荷を中和して除電することができる。 In the present embodiment, as described above, the robot hand 21 of the substrate transfer apparatus 20 is provided with the discharge hole 25, and the ionized gas is discharged from the discharge hole 25 toward the substrate 100. Has been. For this reason, the ionized gas is blown to the lower surface 111 of the substrate 100, whereby the charge charged on the substrate 100 can be neutralized and neutralized.
　ここで、本実施の形態においては、表面電位検出部としての複数の表面電位検出センサ２４が、いずれも基板移載装置２０のロボットハンド２１に設けられているため、電荷が帯電する基板１００の下面１１１の表面電位を当該複数の表面電位検出センサ２４を用いて直接的に検出することができる。したがって、制御部３０が、表面電位検出センサ２４の出力に基づいてイオナイザ３３およびコンプレッサ３４に接続された電磁弁の駆動を制御して放出孔２５から放出されるイオン化された気体の流量を最適化することとすれば、より確実に基板１００の下面１１１の帯電を中和して除電することが可能になる。 Here, in the present embodiment, since the plurality of surface potential detection sensors 24 as the surface potential detection unit are all provided in the robot hand 21 of the substrate transfer device 20, the charge of the substrate 100 to be charged is charged. The surface potential of the lower surface 111 can be directly detected using the plurality of surface potential detection sensors 24. Therefore, the control unit 30 controls the driving of the solenoid valve connected to the ionizer 33 and the compressor 34 based on the output of the surface potential detection sensor 24 to optimize the flow rate of the ionized gas discharged from the discharge hole 25. As a result, it is possible to neutralize the charge on the lower surface 111 of the substrate 100 and eliminate the charge more reliably.
　制御部３０による静電気放電が有ったか否かの具体的な判断手法については、上記において例示した判断手法以外にも様々な手法の適用が考えられ、これに限定されるものではない。たとえば、図６に示すように、基板１００の上昇速度を徐々に下げていく過程において、静電気放電が無かったと最初に判断された際の基板１００の下面１１１の表面電位のピーク値ＶBを閾値として採用し、その後に上昇させる同種の他の基板について、当該基板のリフトオフ時に検出される表面電位のピーク値と当該閾値とを比較することで静電気放電の有無を判断することとしてもよい。また、静電気放電の発生をより確実に防止するためには、マージンを与えるべく、たとえば上記ピーク値ＶBの９割の値を閾値として採用することとしてもよい。なお、時によっては、僅かな表面電位の差で静電気放電の有無が決まる場合も想定されるため、任意の値に閾値をマニュアル設定で微調整可能に構成しておけば、使い勝手のよい装置とすることもできる。 As a specific determination method for determining whether or not there is an electrostatic discharge by the control unit 30, various methods other than the determination method illustrated above may be applied, and the present invention is not limited to this. For example, as shown in FIG. 6, in the process of gradually decreasing the rising speed of the substrate 100, the peak value V B of the surface potential of the lower surface 111 of the substrate 100 when it is first determined that there is no electrostatic discharge is a threshold value. As for other substrates of the same type that are adopted and then raised, the presence or absence of electrostatic discharge may be determined by comparing the peak value of the surface potential detected when the substrate is lifted off with the threshold value. In order to more reliably prevent the occurrence of electrostatic discharge, for example, 90% of the peak value V B may be used as a threshold value in order to provide a margin. In some cases, it is assumed that the presence or absence of electrostatic discharge is determined by a slight difference in surface potential.Therefore, if the threshold is set to an arbitrary value and can be fine-tuned manually, it is easy to use. You can also
　また、上述した図５に示す制御フローにおいては、ステップＳ６において、リフトオフ動作における基板の上昇速度の再設定を行なうことなく前回のリフトオフ動作における基板の上昇速度を維持することとした場合を例示したが、マージンを与えるべく、ステップＳ５において最初に静電気放電が無いと判断された直後においてのみ、ステップＳ６において、たとえば前回のリフトオフ動作における基板の上昇速度の９割の速度にする等、上昇速度を再設定することとしてもよい。 Further, in the control flow shown in FIG. 5 described above, the case where the substrate rising speed in the previous lift-off operation is maintained without resetting the substrate rising speed in the lift-off operation in step S6 is exemplified. However, in order to give a margin, the rising speed is set to be 90% of the rising speed of the substrate in the previous lift-off operation in step S6 only immediately after it is first determined that there is no electrostatic discharge in step S5. It may be reset.
　また、上述した図５に示す制御フローは、予め上昇速度を静電気放電が生じると判断される速度よりも、僅かに早い速度に設定しておき、これを徐々に下げることで上昇速度の最適化を図るように構成した場合のものであるが、これとは異なる制御フローを採用することも可能である。具体的には、たとえば予め上昇速度を静電気放電が生じないと判断される速度よりも、僅かに遅い速度に設定しておき、これを徐々に上げることで上昇速度の最適化を図ることも可能である。この場合には、上昇速度の最適化の段階においてタクトが十分に短縮できないものの、最適化に際して静電気放電が生じてしまう基板を１つに限定することができ、歩留まりの低下を確実に防止することができる。 Further, in the control flow shown in FIG. 5 described above, the rising speed is set to a speed slightly higher than the speed at which electrostatic discharge is determined to occur in advance, and the rising speed is optimized by gradually decreasing the speed. However, a control flow different from this can be adopted. Specifically, for example, it is possible to optimize the ascending speed by setting the ascending speed to a speed slightly slower than the speed at which it is determined that electrostatic discharge does not occur in advance. It is. In this case, although the tact cannot be sufficiently shortened in the stage of optimization of the rising speed, it is possible to limit the number of substrates that cause electrostatic discharge during optimization to one and to reliably prevent the yield from being lowered. Can do.
　加えて、上記においては、基板のリフトオフ動作に本発明を適用した場合を例示して説明を行なったが、基板のリフトオン動作にも当然に本発明を適用することが可能である。その場合には、制御部３０は、表面電位検出センサ２４にて検出された、一の基板を所定の下降速度にて下降させた場合に生じる当該一の基板の下面の表面電位の変化に基づき、その後に下降させる同種の他の基板の下降速度を決定することになる。より詳細には、制御部３０は、表面電位検出センサ２４にて検出された、一の基板を所定の下降速度にて下降させた場合に生じる当該一の基板の下面の表面電位の変化に基づいてその間における静電気放電の有無を判断し、静電気放電が有ったと判断した場合に、次に下降させる同種の他の基板の下降速度を下げ、静電気放電が無かったと判断した場合に、次に下降させる同種の他の基板の下降速度を上記所定の下降速度に維持するか、あるいは上記所定の下降速度に所定のマージンが付与された下降速度に設定するように制御することになる。 In addition, in the above description, the case where the present invention is applied to the lift-off operation of the substrate has been described as an example, but the present invention can naturally be applied to the lift-on operation of the substrate. In that case, the control unit 30 is based on a change in the surface potential of the lower surface of the one substrate that is detected when the one substrate is lowered at a predetermined lowering speed, which is detected by the surface potential detection sensor 24. Then, the descending speed of another substrate of the same type that is subsequently lowered is determined. More specifically, the control unit 30 is based on a change in the surface potential of the lower surface of the one substrate that is detected when the one substrate is lowered at a predetermined lowering speed, which is detected by the surface potential detection sensor 24. In the meantime, the presence or absence of electrostatic discharge is determined. When it is determined that there is electrostatic discharge, the descending speed of the other board of the same type to be lowered next is lowered, and when it is determined that there is no electrostatic discharge, the next descending The lowering speed of the same type of other substrate to be maintained is maintained at the predetermined lowering speed, or is controlled to be set to a lowering speed obtained by adding a predetermined margin to the predetermined lowering speed.
　（実施の形態２）
　図７は、本発明の実施の形態２における基板移載装置のロボットハンドの概略要部拡大斜視図である。 (Embodiment 2)
FIG. 7 is an enlarged schematic perspective view of a main part of the robot hand of the substrate transfer apparatus according to the second embodiment of the present invention.
　上述した本発明の実施の形態１においては、基板移載装置２０のロボットハンド２１に表面電位検出部としての複数の表面電位検出センサ２４を固定的に略均等配置した場合を例示して説明を行なった。これに対し、本実施の形態においては、基板移載装置２０のロボットハンド２１にこれら複数の表面電位検出センサ２４を移動可能に設けた場合を示すものである。 In the first embodiment of the present invention described above, a case where a plurality of surface potential detection sensors 24 as surface potential detection units are fixedly and substantially equally arranged on the robot hand 21 of the substrate transfer apparatus 20 will be described as an example. I did it. On the other hand, in the present embodiment, a case where the plurality of surface potential detection sensors 24 are movably provided in the robot hand 21 of the substrate transfer device 20 is shown.
　具体的には、図７に示すように、本実施の形態における基板移載装置２０においては、ロボットハンド２１の支持部２２の両側端部に支持部２２の延在方向（図中に示す矢印Ｘ方向）に沿って取付溝部２６を一対設け、当該取付溝部２６の両側壁に電極２６ａ，２６ｂを設ける構成とし、表面電位検出センサ２４をそれぞれ可動ユニット２７に設け、当該可動ユニット２７の両側壁に電極２７ａ，２７ｂを設ける構成としている。ここで、可動ユニット２７は、上記取付溝部２６に係合する大きさおよび形状とし、可動ユニット２７を取付溝部２６に係合させた状態で上記電極２６ａ，２６ｂが上記電極２７ａ，２７ｂに接触配置されるように構成している。 Specifically, as shown in FIG. 7, in the substrate transfer apparatus 20 according to the present embodiment, the extending direction of the support portion 22 (arrows shown in the figure) is provided at both end portions of the support portion 22 of the robot hand 21. A pair of mounting groove portions 26 are provided along the (X direction), electrodes 26a and 26b are provided on both side walls of the mounting groove portion 26, surface potential detection sensors 24 are respectively provided on the movable unit 27, and both side walls of the movable unit 27 are provided. In this configuration, electrodes 27a and 27b are provided. Here, the movable unit 27 is sized and shaped to be engaged with the mounting groove 26, and the electrodes 26 a and 26 b are in contact with the electrodes 27 a and 27 b in a state where the movable unit 27 is engaged with the mounting groove 26. It is configured to be.
　このように構成することにより、複数の可動ユニット２７は、支持部２２の延在方向に沿って取付溝部２６の任意の位置にそれぞれ着脱自在に取付けることが可能となり、取付けた位置において表面電位検出センサ２４の検出信号を制御部３０に対して出力することが可能になる。なお、支持部２２の延在方向に沿って可動ユニット２７を複数配置するためには、図示する如く電極２６ａ，２６ｂを当該延在方向に沿って分離して設ければよい。 With this configuration, the plurality of movable units 27 can be detachably attached to arbitrary positions of the attachment groove 26 along the extending direction of the support portion 22, and surface potential detection can be performed at the attachment positions. The detection signal of the sensor 24 can be output to the control unit 30. In order to arrange a plurality of movable units 27 along the extending direction of the support portion 22, the electrodes 26 a and 26 b may be provided separately along the extending direction as shown in the figure.
　以上の構成を採用することにより、複数の表面電位検出センサ２４をそれぞれロボットハンド２１の任意の位置に配置することが可能となる。そのため、上述した本発明の実施の形態１において説明した効果に加え、基板１００の大きさや形状にあわせてより密にまたはより均等に表面電位検出センサ２４を配置することができるといった効果や、より静電気放電が生じ易い箇所に表面電位検出センサ２４を配置することができるといった効果を得ることができ、より高精度に基板１００の下面１１１の表面電位を検出することが可能になる。 By adopting the above configuration, a plurality of surface potential detection sensors 24 can be arranged at arbitrary positions on the robot hand 21, respectively. Therefore, in addition to the effects described in the first embodiment of the present invention described above, the surface potential detection sensors 24 can be arranged more densely or more evenly in accordance with the size and shape of the substrate 100, and more It is possible to obtain an effect that the surface potential detection sensor 24 can be arranged at a place where electrostatic discharge is likely to occur, and the surface potential of the lower surface 111 of the substrate 100 can be detected with higher accuracy.
　また、上記可動ユニット２７を図示しない駆動機構によって支持部２２上において移動可能に構成することも可能である。このように構成すれば、リフトオフ時あるいはリフトオン時に表面電位検出センサ２４を支持部２２上において走査させることにより、より少ない数の表面電位検出センサ２４にて広い範囲の表面電位の検出が可能になる効果を得ることもできる。 Also, the movable unit 27 can be configured to be movable on the support portion 22 by a driving mechanism (not shown). With this configuration, the surface potential detection sensor 24 is scanned on the support portion 22 at the time of lift-off or lift-on, so that a wider range of surface potentials can be detected by a smaller number of surface potential detection sensors 24. An effect can also be obtained.
　なお、以上において説明した本発明の実施の形態１および２における基板移載装置は、新規に設置される製造設備でその利用が可能になるばかりではなく、既存の製造設備においてもその利用が可能なものである。特に、自走式の基板移載装置とすれば、新旧を問わず製造設備のあらゆる場所においてその利用が可能となり、汎用性の高いものとすることができる。 Note that the substrate transfer apparatus according to the first and second embodiments of the present invention described above can be used not only in newly installed manufacturing equipment but also in existing manufacturing equipment. It is a thing. In particular, if a self-propelled substrate transfer device is used, it can be used in any place of manufacturing equipment regardless of whether it is new or old, and can be highly versatile.
　また、以上において説明した本発明の実施の形態１および２における基板移載装置を製造設備に組み込むこととすれば、当該製造設備において基板にどのタイミングで（どの工程において）基板のどの部分（箇所）に帯電が生じやすいか、そのポイントを調査することも可能になる。したがって、当該調査を行なった後に何らかのＥＳＤ対策を施した場合にも、上述した本発明の実施の形態１および２における基板移載装置を利用することにより、当該対策が有効であるか否かの診断を行なうことができる。 Further, if the substrate transfer apparatus according to the first and second embodiments of the present invention described above is incorporated in a manufacturing facility, at what timing (in which process) the substrate (which part) (location) of the substrate in the manufacturing facility It is also possible to investigate whether or not charging is likely to occur. Therefore, even if any ESD countermeasure is taken after the investigation, whether or not the countermeasure is effective by using the substrate transfer apparatus according to the first and second embodiments of the present invention described above. Diagnosis can be made.
　また、以上において説明した本発明の実施の形態１および２における基板移載装置にあっては、基板を１枚毎にその搬送速度を可変に調節して搬送することが可能になるため、より好ましくは、当該基板移載装置に各搬送工程に要する平均タクト等を自動的に算出する機能をあわせ持たせることが好ましい。このように構成すれば、搬送工程毎に生産性を確認することが可能になる。 Further, in the substrate transfer apparatus according to the first and second embodiments of the present invention described above, since it becomes possible to variably adjust the transport speed of each substrate, it is possible to transport more. Preferably, it is preferable that the substrate transfer apparatus has a function of automatically calculating an average tact required for each transfer process. If comprised in this way, it will become possible to confirm productivity for every conveyance process.
　今回開示した上記各実施の形態はすべての点で例示であって、制限的なものではない。本発明の技術的範囲は請求の範囲によって画定され、また請求の範囲の記載と均等の意味および範囲内でのすべての変更を含むものである。 The above-described embodiments disclosed herein are illustrative in all respects and are not restrictive. The technical scope of the present invention is defined by the scope of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.
　１　基板処理システム、２　基板搬送カセット、３　第１基板処理装置、４　第２基板処理装置、５　第３基板処理装置、１０　ステージ、１１　載置面、１２　溝部、２０　基板移載装置、２１　ロボットハンド、２２　支持部、２３　吸着パッド、２４　表面電位検出センサ、２５　放出孔、２６　取付溝部、２６ａ，２６ｂ　電極、２７　可動ユニット、２７ａ，２７ｂ　電極、３０　制御部、３１　ロボットハンド駆動機構、３２　ポンプ、３３　イオナイザ、３４　コンプレッサ、３５　記憶部、３６　表示部、３７　操作部、１００　基板、１１１　下面。 1. Substrate processing system, 2. Substrate transport cassette, 3. First substrate processing apparatus, 4. Second substrate processing apparatus, 5. Third substrate processing apparatus, 10. Stage, 11. Placement surface, 12. Groove, 20. Substrate transfer apparatus, 21. Robot Hand, 22 support part, 23 suction pad, 24 surface potential detection sensor, 25 discharge hole, 26 mounting groove part, 26a, 26b electrode, 27 movable unit, 27a, 27b electrode, 30 control part, 31 robot hand drive mechanism, 32 pump 33 ionizer, 34 compressor, 35 storage unit, 36 display unit, 37 operation unit, 100 substrate, 111 lower surface.

Claims (8)

  1. 　複数の基板を順次上昇および下降させることでこれら基板を順次移載する基板移載装置であって、
    　基板の下方に挿入されることで基板を支持可能なロボットハンド（２１）と、
    　前記ロボットハンド（２１）を昇降させるためのロボットハンド昇降機構（３１）と、
    　前記ロボットハンド（２１）に設けられ、当該ロボットハンド（２１）にて基板を支持した状態において支持した基板の下面の表面電位を検出可能な表面電位検出部（２４）と、
    　前記ロボットハンド昇降機構（３１）の駆動を制御することで基板の上昇速度または／および下降速度を可変に調節可能な制御部（３０）とを備え、
    　前記制御部（３０）は、前記表面電位検出部（２４）にて検出された、一の基板を所定の上昇速度または／および下降速度にて上昇または／および下降させた場合に生じる当該一の基板の下面の表面電位の変化に基づき、その後に上昇または／および下降させる同種の他の基板の上昇速度または／および下降速度を決定する、基板移載装置。     A substrate transfer apparatus that sequentially transfers a plurality of substrates by raising and lowering a plurality of substrates,
    A robot hand (21) capable of supporting the substrate by being inserted below the substrate;
    A robot hand lifting mechanism (31) for lifting and lowering the robot hand (21);
    A surface potential detector (24) provided in the robot hand (21) and capable of detecting the surface potential of the lower surface of the substrate supported in a state where the substrate is supported by the robot hand (21);
    A control unit (30) capable of variably adjusting the ascending speed and / or descending speed of the substrate by controlling the driving of the robot hand lifting mechanism (31);
    The control unit (30) generates the one detected when the one substrate detected by the surface potential detection unit (24) is raised or lowered at a predetermined rising speed and / or lowering speed. A substrate transfer apparatus that determines a rising speed and / or a lowering speed of another substrate of the same type that is subsequently raised or / and lowered based on a change in surface potential of the lower surface of the substrate.
  2. 　前記制御部（３０）は、前記表面電位検出部（２４）にて検出された、一の基板を所定の上昇速度または／および下降速度にて上昇または／および下降させた場合に生じる当該一の基板の下面の表面電位の変化に基づいてその間における静電気放電の有無を判断し、静電気放電が有ったと判断した場合に、次に上昇または／および下降させる同種の他の基板の上昇速度または／および下降速度を下げ、静電気放電が無かったと判断した場合に、次に上昇または／および下降させる同種の他の基板の上昇速度または／および下降速度を前記所定の上昇速度または／および下降速度に維持するか、あるいは前記所定の上昇速度または／および下降速度に所定のマージンが付与された上昇速度または／および下降速度に設定する、請求項１に記載の基板移載装置。 The control unit (30) generates the one detected when the one substrate detected by the surface potential detection unit (24) is raised or lowered at a predetermined rising speed and / or lowering speed. Based on the change in the surface potential of the lower surface of the substrate, the presence or absence of electrostatic discharge is determined, and when it is determined that electrostatic discharge has occurred, When it is determined that there is no electrostatic discharge, the rising speed and / or lowering speed of another substrate of the same type to be raised or lowered next is maintained at the predetermined rising speed or / and lowering speed. Or an ascending speed or / and a descending speed obtained by adding a predetermined margin to the predetermined ascending speed or / and descending speed. The substrate transfer apparatus.
  3. 　前記表面電位検出部（２４）が、前記ロボットハンド（２１）に複数設けられている、請求項１または２に記載の基板移載装置。 The substrate transfer apparatus according to claim 1 or 2, wherein a plurality of the surface potential detection units (24) are provided in the robot hand (21).
  4. 　前記表面電位検出部（２４）が、前記ロボットハンド（２１）の任意の位置に着脱自在に取付け可能とされている、請求項１から３のいずれかに記載の基板移載装置。 The substrate transfer apparatus according to any one of claims 1 to 3, wherein the surface potential detection unit (24) is detachably attachable to an arbitrary position of the robot hand (21).
  5. 　前記表面電位検出部（２４）が、前記ロボットハンド（２１）に移動可能に設けられている、請求項１から３のいずれかに記載の基板移載装置。 The substrate transfer apparatus according to any one of claims 1 to 3, wherein the surface potential detection unit (24) is movably provided on the robot hand (21).
  6. 　正イオンまたは／および負イオンを生成するイオナイザ（３３）をさらに備え、
    　前記イオナイザ（３３）にて生成された正イオンまたは／および負イオンを基板に向けて吹き付けるための放出孔（２５）が、前記ロボットハンド（２１）に設けられている、請求項１から５のいずれかに記載の基板移載装置。     An ionizer (33) for generating positive ions and / or negative ions;
    The discharge hole (25) for spraying positive ions and / or negative ions generated by the ionizer (33) toward the substrate is provided in the robot hand (21). The substrate transfer apparatus according to any one of the above.
  7. 　請求項１から６のいずれかに記載の基板移載装置（２０）と、
    　基板を処理するための複数の基板処理装置（３，４，５）とを備え、
    　前記基板移載装置（２０）が、前記複数の基板処理装置（３，４，５）に基板を順次搬入および搬出するための部位として構成されている、基板処理システム。     The substrate transfer device (20) according to any one of claims 1 to 6,
    A plurality of substrate processing apparatuses (3, 4, 5) for processing a substrate;
    The substrate processing system, wherein the substrate transfer device (20) is configured as a part for sequentially loading and unloading substrates to and from the plurality of substrate processing devices (3, 4, 5).
  8. 　前記制御部（３０）が、前記複数の基板処理装置（３，４，５）のそれぞれについて、個別に基板の上昇速度または／および下降速度を可変に調節可能である、請求項７に記載の基板処理システム。 8. The control unit (30) according to claim 7, wherein each of the plurality of substrate processing apparatuses (3, 4, 5) can individually adjust the rising speed and / or the lowering speed of the substrate variably. Substrate processing system.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2630063A4 (en) * 2010-10-22 2018-01-03 Laitram, L.L.C. Conveyor system, belt, and method for measuring and controlling static electricity

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213445A (en) * 1995-02-03 1996-08-20 Hitachi Ltd Method and apparatus for receiving articles
JP2000025948A (en) * 1998-07-10 2000-01-25 Yaskawa Electric Corp Electrostatic floating conveyor
JP2001060609A (en) * 1999-08-20 2001-03-06 Tokyo Electron Ltd Substrate transfer device and substrate treating system
JP2002026110A (en) * 2000-07-07 2002-01-25 Dainippon Printing Co Ltd Substrate-carrying arm with destaticizing function
JP2004087576A (en) * 2002-08-23 2004-03-18 Nec Kyushu Ltd Vacuum processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213445A (en) * 1995-02-03 1996-08-20 Hitachi Ltd Method and apparatus for receiving articles
JP2000025948A (en) * 1998-07-10 2000-01-25 Yaskawa Electric Corp Electrostatic floating conveyor
JP2001060609A (en) * 1999-08-20 2001-03-06 Tokyo Electron Ltd Substrate transfer device and substrate treating system
JP2002026110A (en) * 2000-07-07 2002-01-25 Dainippon Printing Co Ltd Substrate-carrying arm with destaticizing function
JP2004087576A (en) * 2002-08-23 2004-03-18 Nec Kyushu Ltd Vacuum processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2630063A4 (en) * 2010-10-22 2018-01-03 Laitram, L.L.C. Conveyor system, belt, and method for measuring and controlling static electricity

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