WO2012054845A3 - Intermediate materials and methods for high-temperature applications - Google Patents

Intermediate materials and methods for high-temperature applications Download PDF

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Publication number
WO2012054845A3
WO2012054845A3 PCT/US2011/057311 US2011057311W WO2012054845A3 WO 2012054845 A3 WO2012054845 A3 WO 2012054845A3 US 2011057311 W US2011057311 W US 2011057311W WO 2012054845 A3 WO2012054845 A3 WO 2012054845A3
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
shaft
methods
temperature applications
intermediate materials
Prior art date
Application number
PCT/US2011/057311
Other languages
French (fr)
Other versions
WO2012054845A2 (en
Inventor
Govindhan Dhanaraj
Chandra P. Khattak
Ben Korzeniowski
Carl Richard Schwerdtfeger, Jr.
Raj Shetty
Original Assignee
Advanced Renewableenergy Co. Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/909,471 external-priority patent/US20110179992A1/en
Priority claimed from US13/095,073 external-priority patent/US20110253033A1/en
Application filed by Advanced Renewableenergy Co. Llc filed Critical Advanced Renewableenergy Co. Llc
Publication of WO2012054845A2 publication Critical patent/WO2012054845A2/en
Publication of WO2012054845A3 publication Critical patent/WO2012054845A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

Abstract

A system and method for growing crystals is described. The system includes a crucible, a shaft adapted to support the crucible, and an intermediate material between the crucible and the shaft having a coating directly applied to contact surfaces of the crucible and the shaft. The coating includes a compound, such as, a carbide, nitride, oxide, or boride. The method for growing a crystal includes providing an intermediate material between contact surfaces between a shaft and a crucible supported by the shaft prior to melting a charge material in the crucible.
PCT/US2011/057311 2010-10-21 2011-10-21 Intermediate materials and methods for high-temperature applications WO2012054845A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/909,471 US20110179992A1 (en) 2008-10-24 2010-10-21 Crystal growth methods and systems
US12/909,471 2010-10-21
US13/095,073 US20110253033A1 (en) 2008-10-24 2011-04-27 Crystal growing system and method thereof
US13/095,073 2011-04-27

Publications (2)

Publication Number Publication Date
WO2012054845A2 WO2012054845A2 (en) 2012-04-26
WO2012054845A3 true WO2012054845A3 (en) 2012-08-16

Family

ID=45975915

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/057311 WO2012054845A2 (en) 2010-10-21 2011-10-21 Intermediate materials and methods for high-temperature applications

Country Status (2)

Country Link
TW (2) TW201233854A (en)
WO (1) WO2012054845A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017127487A1 (en) 2016-01-21 2017-07-27 The Cleveland Clinic Foundation System and apparatus for assisting with submucosal dissections
US11350946B2 (en) 2017-11-08 2022-06-07 Mayo Foundation For Medical Education And Research Systems and methods for endoscopic submucosal dissection using magnetically attachable clips
JP7350734B2 (en) 2017-11-08 2023-09-26 メイヨ・ファウンデーション・フォー・メディカル・エデュケーション・アンド・リサーチ Systems and methods for endoscopic submucosal resection using magnetically attachable hemostatic clips
US11737679B2 (en) 2019-01-08 2023-08-29 Covidien Lp Localization systems and methods of use
AT524600B1 (en) * 2020-12-29 2023-05-15 Fametec Gmbh Process for producing a monocrystalline crystal, in particular a sapphire
CN115029771A (en) * 2022-07-13 2022-09-09 北京铭镓半导体有限公司 Crucible adhesion preventing method for color gem crystal growth crucible by VGF method
CN115418705A (en) * 2022-08-25 2022-12-02 北京铭镓半导体有限公司 Method for fixing crucible for color gem crystal growth by VGF method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007254201A (en) * 2006-03-23 2007-10-04 Ngk Insulators Ltd Method for manufacturing single crystal
US20080053372A1 (en) * 2006-09-01 2008-03-06 Okmetic Oyj Crystal manufacturing
US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007254201A (en) * 2006-03-23 2007-10-04 Ngk Insulators Ltd Method for manufacturing single crystal
US20080053372A1 (en) * 2006-09-01 2008-03-06 Okmetic Oyj Crystal manufacturing
US20100101387A1 (en) * 2008-10-24 2010-04-29 Kedar Prasad Gupta Crystal growing system and method thereof

Also Published As

Publication number Publication date
TW201224230A (en) 2012-06-16
TW201233854A (en) 2012-08-16
WO2012054845A2 (en) 2012-04-26

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