WO2012022977A1 - Dispositif photoélectrique - Google Patents

Dispositif photoélectrique Download PDF

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Publication number
WO2012022977A1
WO2012022977A1 PCT/GB2011/051558 GB2011051558W WO2012022977A1 WO 2012022977 A1 WO2012022977 A1 WO 2012022977A1 GB 2011051558 W GB2011051558 W GB 2011051558W WO 2012022977 A1 WO2012022977 A1 WO 2012022977A1
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WO
WIPO (PCT)
Prior art keywords
layer
nanoparticles
active region
light
textured
Prior art date
Application number
PCT/GB2011/051558
Other languages
English (en)
Inventor
Alistair Kean
Original Assignee
Mantis Deposition Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mantis Deposition Limited filed Critical Mantis Deposition Limited
Publication of WO2012022977A1 publication Critical patent/WO2012022977A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to photoelectric devices, and in particular relates to photoelectric devices comprising nanoparticles, and methods for producing the same.
  • a photoelectric device comprising an active region for detecting incident photons and (adjacent the active region) a textured layer comprising a layer of material upon which is deposited a plurality of nanoparticles of said material.
  • nanoparticles are extremely effective in scattering light into the active region - significantly more so than (for example) texturing the surface by etching or the like.
  • Such etchants tend to follow the metallic grain structure of the reflective material and can be chemically difficult.
  • the scattering increases the average optical path of photons through the active region, increasing the efficiency of the device.
  • the active region can comprise any conventional photoelectrically active material, such as a compound of copper, indium, gallium and selenium, or various forms of silicon, such as amorphous silicon or microcrystalline silicon.
  • the material in the textured layer preferably comprises molybdenum or a metal oxide such as zinc oxide. We have found that these materials offer good scattering properties together with ease of production and deposition of the nanoparticles.
  • a substrate can be provided adjacent the textured layer in order to provide the necessary mechanical support.
  • the device can be a photovoltaic cell, a charge-coupled device, a photodiode, or any other photoelectric device.
  • the invention also provides a method of manufacturing a photoelectric device, comprising depositing a layer of material onto a substrate, depositing a plurality of nanoparticles of the material onto the layer of material, and depositing thereupon a layer of active material for detecting incident photons.
  • Figure 1 shows a cross-section through a photoelectric device according to an embodiment of the present invention
  • Figures 2 to 4 show sequential steps in the manufacture of a device according to figure 1;
  • Figure 5 shows a cross-section through a photoelectric device according to a further embodiment of the present invention.
  • Figures 6 and 7 show sequential steps in the manufacture of a device shown in figure 5.
  • the present invention provides a photoelectric device in which a layer adjacent the action region is textured by deposition of nanoparticles.
  • the textured layer is a metallic layer positioned "behind" the active layer.
  • the textured metallic layer reflects incident photons backwards through the active layer.
  • the textured layer is a transparent metal oxide layer positioned "above" the active layer. Incident photons pass through the transparent metal oxide layer, but undergo scattering due to its textured surface.
  • Figure 1 shows a cross-section of a portion of a photoelectric device 10 according to the first embodiments of the present invention.
  • the device 10 comprises a substrate 12 to provide the necessary mechanical support.
  • a substrate 12 to provide the necessary mechanical support.
  • Common materials for the substrate include glass, such as soda-lime glass, in a thickness between 1 and 3 mm.
  • plastic substrates may also be used within the scope of the present invention.
  • Adjacent the substrate 12 is a textured light-reflective layer 14, to be described in greater detail below.
  • the reflective layer 14 further acts as a back contact for the device, allowing the current generated in the active region to be collected .
  • a suitable material for use in the reflective layer 14 is molybdenum.
  • Adjacent the reflective layer 14 is a layer of light-absorbing material 16.
  • a layer of light-absorbing material 16 is a semiconductor material such as copper indium gallium (di)selenide (CIGS), with a chemical formula of CuIn x Ga ( i - X )Se 2 , where x is a variable in the range of 0 and 1.
  • the light- absorbing layer 16 is also known as the active region, or active layer, as it is the region in which incident photons are absorbed and electron-hole pairs created .
  • Adjacent the light-absorbing layer 16 is a further layer 18 of doped semiconductor material, which forms a heterojunction with the light-absorbing layer 16.
  • a further layer 18 of doped semiconductor material Adjacent the light-absorbing layer 16 is a further layer 18 of doped semiconductor material, which forms a heterojunction with the light-absorbing layer 16.
  • semiconductor layer 18 is n-type zinc oxide (suitable n-type dopants include aluminium and other group III elements) .
  • the doping level in the semiconductor layer 18 is much greater than the effective doping level of the light-absorbing layer 16, resulting in a depletion region that extends much further into the light- absorbing layer 16 than the doped semiconductor layer 18.
  • the doped layer 18 may also act as a front contact for the device 10, for current collection .
  • the light-absorbing layer 16 and the doped semiconductor layer 18 are in direct contact. However, they may also be separated by one or more layers of intrinsic semiconductor material (e.g .
  • the device 10 is encapsulated to limit damage from the environment.
  • incident photons pass into the device 10 and are absorbed in the light-absorbing layer 16.
  • the absorption of a photon generates an electron- hole pair in the layer 16, with the electrons and holes diffusing in opposite directions under action of the potential gradient across the heterojunction .
  • Hole drift is towards the n-type region (e.g . doped layer 18), and electron drift is towards the p-type region (e.g . light-absorbing layer 16).
  • the charge carriers are ultimately collected by the front and back contacts respectively, and lead to a current being generated .
  • the reflective layer 14 is known to increase the efficiency of the device 10 by reflecting photons that have already passed through an active region back towards the active region, thereby increasing the likelihood that the photons will be absorbed .
  • the layer 14 is formed from a light-reflective material, and so will ordinarily increase the efficiency of the device through simple reflection.
  • randomized reflective surface scatters incident photons in directions that are, in general, not normal to the plane of the device 10. Therefore the photons have a longer mean path within the light-absorbing layer 16, leading to increased likelihood of absorption.
  • the textured layer 14 comprises a relatively smooth layer of light-reflective material, upon which is deposited a number of nanoparticles of the light-reflective material.
  • the nanoparticles serve to "roughen" the surface of the layer 14, providing texture that increases the efficiency of the device 10.
  • Such control is not possible using conventional texturing means (e.g . chemical etching mentioned above).
  • nanoparticles having a diameter in the range of 20 to 160 nm are suitable for this purpose, as they generate plasmons that interact with the incoming normal photons, reflecting them sideways along the plane of the device 10.
  • a method for generating such nanoparticles is disclosed in our co-pending application entitled “Production of nanoparticles" and filed concurrently herewith, the contents of which are incorporated herein by reference.
  • Figures 2 to 4 show the steps in a method of producing a device 10 according to embodiments of the present invention.
  • the device 10 comprises a smooth layer 20 of light-reflecting material deposited on a substrate 12 (for example, through sputtering).
  • the substrate 12 may be glass, and the light-reflecting material molybdenum.
  • nanoparticles of light- reflecting material have been deposited onto the smooth layer 20.
  • the nanoparticles have a diameter in the range 20 to 160 nm, and are adsorbed onto the surface of the smooth layer 20.
  • Such large- scale nanoparticles result in a textured light-reflecting layer 14 in which the texture is relatively coarse and therefore suitable for reflecting photons at substantial angles to the plane of the device 10.
  • a layer of light-absorbing material 16 (e.g . CIGS) has been deposited on top of the textured layer 14.
  • CIGS films can be manufactured by several different methods. The most common vacuum-based process
  • the device 10 as shown in Figure 1 is achieved by further depositing a layer of doped semiconductor material (e.g. ZnO(AI)) 18 onto the light-absorbing layer 16.
  • a layer of doped semiconductor material e.g. ZnO(AI)
  • semiconductor material e.g. CdS, ZnO
  • CdS CdS, ZnO
  • the device 10 described above may form part of a photovoltaic cell, a charge-coupled device, a photodiode, or any other photoelectric device.
  • Figure 5 shows a cross-section view of a photoelectric device 100 according to second embodiments of the present invention.
  • the device 100 again comprises a substrate 112 to provide the necessary mechanical support.
  • a substrate 112 to provide the necessary mechanical support.
  • Common materials for the substrate include glass, such as soda-lime glass, in a thickness between 1 and 3 mm.
  • plastic substrates may also be used within the scope of the present invention.
  • Adjacent the substrate 112 is a light-reflective metallic layer 114.
  • the reflective layer 114 acts as a back contact for the device, allowing the current generated in the active region to be collected. It also reflects incident photons back through the active layer in order to increase the efficiency of the device.
  • a suitable material for use in the reflective layer 114 is aluminium.
  • Adjacent the reflective layer 114 is a layer of light-absorbing material 116.
  • a layer of light-absorbing material 116 is Adjacent the reflective layer 114.
  • One suitable material well known in the art is amorphous silicon (a-Si).
  • microcrystalline silicon is becoming known and is likely to be used more commonly in future.
  • Adjacent the light-absorbing layer 116 is a layer of transparent conducting oxide (TCO) 118.
  • TCO transparent conducting oxide
  • the TCO layer is formed from doped semiconductor material, which forms a heterojunction with the light-absorbing layer 116.
  • the semiconductor layer 18 is n-type zinc oxide (suitable n-type dopants include aluminium and other group III elements).
  • the TCO layer 118 may also act as a front contact for the device 100, for current collection.
  • the light-absorbing layer 116 and the doped semiconductor layer 118 are in direct contact. However, they may also be separated by one or more layers of intrinsic semiconductor material (e.g . intrinsic ZnO and/or cadmium sulphide, CdS).
  • intrinsic semiconductor material e.g . intrinsic ZnO and/or cadmium sulphide, CdS.
  • the TCO layer 118 comprises a relatively smooth layer of metal oxide, upon which is deposited a number of nanoparticles of the metal oxide.
  • the nanoparticles serve to "roughen” the surface of the layer 118, providing texture that increases the efficiency of the device 100.
  • the device 100 is encapsulated by a protective layer of glass 120 (for example) to limit damage from the environment.
  • incident photons pass into the device 100, through the TCO layer 118. Because of the texturing applied to the TCO layer surface the photons are scattered in a direction parallel to the active layer 116, so that their mean optical path is greater and the chances of absorption in the light-absorbing layer 116 are increased .
  • the absorption of a photon generates an electron-hole pair in the layer 116, with the electrons and holes diffusing in opposite directions under action of the potential gradient across the heterojunction. Hole drift is towards the n-type region (e.g. TCO layer 118), and electron drift is towards the p-type region (e.g . light-absorbing layer 116).
  • the charge carriers are ultimately collected by the front and back contacts respectively, and lead to a current being generated.
  • the reflective layer 114 also increases the efficiency of the device 100 by reflecting photons that have already passed through an active region back towards the active region, thereby increasing the likelihood that the photons will be absorbed.
  • Figures 6 and 7 show the steps in a method of producing a device 100 according to the second embodiments of the present invention.
  • the device 100 comprises a light- reflective metallic back contact 114, an active layer 116, and a smooth layer 122 of TCO material, all deposited on a substrate 112 (for example, through sputtering).
  • nanoparticles of TCO material have been deposited onto the smooth layer 122.
  • the nanoparticles have a diameter in the range 20 to
  • Such large-scale nanoparticles result in a textured TCO layer 118 in which the texture is relatively coarse and therefore suitable for reflecting photons at substantial angles to the plane of the device 100.
  • the device 100 as shown in Figure 5 is achieved by further depositing a layer of glass 120 onto the textured TCO layer 118.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un dispositif photoélectrique comprenant une région active servant à détecter des photons incidents et (adjacente à la région active) une couche texturée comprenant une couche de matériau sur laquelle est déposée une pluralité de nanoparticules dudit matériau. Ces nanoparticules sont extrêmement efficaces pour diffuser la lumière dans la région active et parallèlement au plan du dispositif, ce qui accroît ainsi son efficacité.
PCT/GB2011/051558 2010-08-18 2011-08-18 Dispositif photoélectrique WO2012022977A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1013864.2A GB2483053A (en) 2010-08-18 2010-08-18 Photoelectric device with a nanoparticle textured layer
GB1013864.2 2010-08-18

Publications (1)

Publication Number Publication Date
WO2012022977A1 true WO2012022977A1 (fr) 2012-02-23

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008008516A2 (fr) * 2006-07-14 2008-01-17 The Regents Of The University Of California Procédé d'amélioration de particules à diffusion vers l'avant et dispositif photodétecteur
US20090139571A1 (en) * 2007-11-30 2009-06-04 Delta Electronics, Inc. Solar cell and manufacturing method thereof
US20090165845A1 (en) * 2007-12-27 2009-07-02 Industrial Technology Research Institute Back contact module for solar cell
JP2010087479A (ja) * 2008-08-08 2010-04-15 Mitsubishi Materials Corp サブストレート型太陽電池用の複合膜及びその製造方法
EP2190027A1 (fr) * 2007-09-12 2010-05-26 Mitsubishi Materials Corporation Membrane composite pour cellule solaire super rectiligne, processus de production de la membrane composite pour cellule solaire super rectiligne, membrane composite pour cellule solaire sous-rectiligne et processus de production de la membrane composite pour cellule solaire sous-rectiligne

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101246919A (zh) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 获得氢化硅薄膜粗糙表面的方法
KR20120002583A (ko) * 2009-03-06 2012-01-06 유니버시티 오브 플로리다 리서치 파운데이션, 인크. 공기 중에 안정한 유-무기 나노입자 하이브리드 태양전지

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008008516A2 (fr) * 2006-07-14 2008-01-17 The Regents Of The University Of California Procédé d'amélioration de particules à diffusion vers l'avant et dispositif photodétecteur
EP2190027A1 (fr) * 2007-09-12 2010-05-26 Mitsubishi Materials Corporation Membrane composite pour cellule solaire super rectiligne, processus de production de la membrane composite pour cellule solaire super rectiligne, membrane composite pour cellule solaire sous-rectiligne et processus de production de la membrane composite pour cellule solaire sous-rectiligne
US20090139571A1 (en) * 2007-11-30 2009-06-04 Delta Electronics, Inc. Solar cell and manufacturing method thereof
US20090165845A1 (en) * 2007-12-27 2009-07-02 Industrial Technology Research Institute Back contact module for solar cell
JP2010087479A (ja) * 2008-08-08 2010-04-15 Mitsubishi Materials Corp サブストレート型太陽電池用の複合膜及びその製造方法

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GB201013864D0 (en) 2010-09-29

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