WO2012020649A1 - Surface acoustic wave device - Google Patents

Surface acoustic wave device Download PDF

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Publication number
WO2012020649A1
WO2012020649A1 PCT/JP2011/067256 JP2011067256W WO2012020649A1 WO 2012020649 A1 WO2012020649 A1 WO 2012020649A1 JP 2011067256 W JP2011067256 W JP 2011067256W WO 2012020649 A1 WO2012020649 A1 WO 2012020649A1
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WO
WIPO (PCT)
Prior art keywords
acoustic wave
surface acoustic
electrode
mounting substrate
wave device
Prior art date
Application number
PCT/JP2011/067256
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French (fr)
Japanese (ja)
Inventor
上坂　健一
Original Assignee
株式会社村田製作所
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Publication of WO2012020649A1 publication Critical patent/WO2012020649A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a surface acoustic wave device, and more specifically, a surface acoustic wave element in which an IDT electrode is flip-chip mounted on a mounting substrate, and a sealing resin is provided on the surface acoustic wave element mounted. Wave device.
  • Patent Document 1 Japanese Patent Laid-Open No. 2002-1000094
  • FIG. 8 shows a surface acoustic wave device 600 as an example of such a conventional surface acoustic wave device.
  • 8A is a cross-sectional view of the surface acoustic wave device 600
  • FIG. 8B is a main surface of the surface acoustic wave element 101 used in the surface acoustic wave device 600 on the side where the IDT electrode is formed. It is a top view which shows a surface.
  • the surface acoustic wave element 101 includes a piezoelectric substrate 104, and an IDT electrode 105 and a pair of wiring electrodes 106 connected to the IDT electrode 105 are formed on one main surface of the piezoelectric substrate 104.
  • the IDT electrode 105 is composed of a pair of comb-shaped electrodes having a plurality of electrode fingers interleaved with each other, and constitutes, for example, a resonator.
  • the wiring electrode 106 has a connection electrode 106 a used when flip-chip mounting the surface acoustic wave element 101 on the mounting substrate 102 at the end opposite to the end connected to the IDT electrode 105.
  • the surface acoustic wave element 101 is flip-chip mounted on the mounting substrate 102. Specifically, the surface of the surface acoustic wave element 101 on which the IDT electrode 105 is formed faces the mounting substrate 102 side, and the connection electrode 106a of the surface acoustic wave element 101 is connected to the land electrode 107 of the mounting substrate 102. Bonded by bumps 108. As a result, a space 109 is formed between the surface acoustic wave element 101 and the mounting substrate 102, and the vibration of the surface acoustic wave by the IDT electrode 105 is secured by the space 109.
  • the bump 108 for example, gold, copper, an alloy thereof, solder, or the like is used.
  • a sealing resin 103 is provided on a mounting substrate 102 on which the surface acoustic wave element 101 is mounted.
  • the sealing resin 103 is made of an epoxy resin or the like, and is not designed to enter the space 109 between the surface acoustic wave element 101 and the mounting substrate 102 and does not reach the IDT electrode 105.
  • a conventional surface acoustic wave device 600 having such a structure is manufactured, for example, by the following method.
  • bumps 108 are formed on the connection electrodes 106a of the surface acoustic wave element 101 by a commonly used method.
  • the surface acoustic wave element 101 is disposed on the mounting substrate 102 with the main surface on which the IDT electrode 105 is formed facing the mounting substrate 102 side.
  • the bumps 108 formed on the connection electrodes 106 a of the surface acoustic wave element 101 are arranged so as to be placed on the land electrodes 107 of the mounting substrate 102.
  • the bumps 108 formed on the connection electrodes 106 a of the surface acoustic wave element 101 are bonded to the land electrodes 107 of the mounting substrate 102.
  • the bumps 108 are formed of solder, for example, heating is performed, and when the bumps 108 are formed of gold, for example, heating, pressurization, and ultrasonic vibration are combined.
  • the flip chip mounting of the surface acoustic wave element 101 to the mounting substrate 102 is completed.
  • the sealing resin 103 is provided on the mounting substrate 102 on which the surface acoustic wave element 101 is mounted.
  • a thermosetting resin made of epoxy or the like is applied to the mounting substrate 102 on which the surface acoustic wave element 101 is mounted, and the surface of the surface acoustic wave element 101 is covered and then heated.
  • a thermosetting resin sheet made of epoxy or the like that is heated to be in a semi-molten state is placed on the mounting substrate 102 on which the surface acoustic wave element 101 is mounted, and covers the surface of the surface acoustic wave element 101.
  • the resin is further heated to cure the resin.
  • the conventional surface acoustic wave device 600 is completed.
  • the sealing resin 103 when the sealing resin 103 is provided, the flowed resin reaches the IDT electrode 105 and the characteristics of the surface acoustic wave device 600 are deteriorated. In some cases, the surface acoustic wave device 600 may not function.
  • the surface acoustic wave device of the present invention is connected to a mounting substrate having land electrodes formed on one main surface, at least one IDT electrode on one main surface, and the IDT electrode.
  • a wiring electrode is formed, and a predetermined portion of the wiring electrode is connected to the land electrode of the mounting board, and the surface acoustic wave element flip-chip mounted on the mounting board, and the surface acoustic wave element is covered and mounted.
  • a sealing resin provided on the substrate, and a recess is formed in the wiring electrode of the surface acoustic wave element from the side of the wiring electrode to the inside.
  • the surface acoustic wave device of the present invention can stop the resin that has flowed along the side of the wiring electrode when the sealing resin is provided by the recess, and prevent the resin from reaching the IDT electrode. can do.
  • intersection angle between the side of the wiring electrode in which the recess is formed and one side of the recess in contact with the side is preferably 90 degrees or smaller than 90 degrees. This is because if it is 90 degrees, the flowing resin can be stopped reliably. Moreover, if it is smaller than 90 degrees, the flowing resin can be stopped more reliably.
  • the recesses are formed on both opposite sides of the wiring electrode in a state of being obliquely displaced from each other. In this case, the wiring resistance of the wiring electrode can be kept small.
  • the resin flowing along the side of the wiring electrode can be stopped by the recess formed in the wiring electrode. Therefore, in the surface acoustic wave device of the present invention, the flowed resin does not reach the IDT electrode and the vibration of the surface acoustic wave by the IDT electrode is not hindered, and the characteristics are deteriorated or the function does not function. There is no end.
  • FIG. 1 shows a surface acoustic wave device 100 according to a first embodiment of the present invention, in which FIG. 1A is a cross-sectional view of the surface acoustic wave device 100, and FIG. 1B is a surface acoustic wave used in the surface acoustic wave device 100.
  • 3 is a plan view showing a main surface of an element 1 on which an IDT electrode 5 is formed.
  • FIG. In the surface acoustic wave device 100 according to the first embodiment of the present invention it is a plan view showing a state in which the flow of the resin 3 ′ along the side of the wiring electrode 6 is stopped by the recess 6 b.
  • FIG. 1 shows a surface acoustic wave device 100 according to a first embodiment of the present invention.
  • 1A is a sectional view of the surface acoustic wave device 100
  • FIG. 1B is a side view of the surface acoustic wave element 1 used in the surface acoustic wave device 100 on which the IDT electrode 5 is formed. It is a top view which shows a main surface.
  • a pair of wiring electrodes 6 connected to the IDT electrode 5 are further formed on one main surface of the piezoelectric substrate 4.
  • the wiring electrode 6 has a connection electrode 6 a that is used when the surface acoustic wave element 1 is flip-chip mounted on the mounting substrate 2 at the end opposite to the end connected to the IDT electrode 5.
  • the wiring electrode 6 is formed with a recess 6b from the side to the inside.
  • the recess 6b is a characteristic element of the present invention, and stops the resin flowing along the side of the wiring electrode 6 when the sealing resin 3 is provided, as will be described later. It is.
  • a total of four recesses 6 b are formed on both opposing sides.
  • the material of the mounting substrate 2 is not particularly limited, but for example, insulating ceramic or resin is used.
  • a land electrode 7 is formed on one main surface of the mounting substrate 2. Although not shown, the land electrode 7 is connected to an external electrode formed on the end surface or the other main surface of the mounting substrate 2 via a wiring formed inside the mounting substrate 2.
  • gold, copper, silver, nickel, tungsten, alloys thereof, or the like can be used.
  • the surface acoustic wave element 1 is flip-chip mounted on a mounting substrate 2. Specifically, the surface of the surface acoustic wave element 1 on which the IDT electrode 5 is formed is directed toward the mounting substrate 2, and the connection electrode 6 a of the surface acoustic wave element 1 is connected to the land electrode 7 of the mounting substrate 2. Bonded by bumps 8. As a result, a space 9 is formed between the surface acoustic wave element 1 and the mounting substrate 2, and the vibration of the surface acoustic wave by the IDT electrode 5 is secured by the space 9.
  • the height of the space 9 is, for example, when the IDT electrode 5 and the wiring electrode 6 have a thickness of 0.5 ⁇ m, the land electrode 7 has a thickness of 1.0 ⁇ m, and the bump 8 after bonding has a thickness of 20.0 ⁇ m. Is about 21.5 ⁇ m.
  • the material of the bump 8 for example, gold, copper, alloys thereof, solder, or the like can be used.
  • a sealing resin 3 is provided on a mounting substrate 2 on which the surface acoustic wave element 1 is mounted.
  • the sealing resin 3 for example, an epoxy resin can be used.
  • an epoxy resin can be used.
  • the sealing resin 3 when the sealing resin 3 is provided, even if the resin constituting the sealing resin 3 flows along the side of the wiring electrode 6, it is formed on the wiring electrode 6. The resin does not reach the IDT electrode 5 because it is stopped by the recessed portion 6b.
  • the surface acoustic wave device 100 according to the first embodiment of the present invention having such a structure is manufactured by, for example, the following method.
  • the mounting substrate 2 can be obtained using a commonly used substrate manufacturing technique.
  • the mounting substrate 2 is a ceramic multilayer substrate, for example, a plurality of insulating ceramic green sheets are prepared, and necessary surface wiring and via holes are formed on each green sheet using a conductive paste. Sheets are stacked in a predetermined order, pressed, fired with a predetermined profile, land electrodes 7 are formed on one main surface, and necessary wiring (not shown), end surfaces or the other main surface are formed inside. A mounting substrate 2 on which external electrodes (not shown) are formed can be obtained.
  • the mounting substrate 2 is also prepared with a large number of large mother green sheets, via holes and surface wiring for each mounting substrate 2 are formed on the mother green sheet, stacked, pressed, fired, and then mounted. The substrate 2 can be divided and manufactured.
  • bumps 8 are formed on the connection electrodes 6 a of the surface acoustic wave element 1. Specifically, for example, a wire made of gold, copper or the like is prepared, and the bump 8 is formed on the connection electrode 6a by a ball bonding method. Alternatively, the bumps 8 may be formed by applying a conductive adhesive containing a desired metal onto the connection electrodes 6a in a desired shape.
  • the sealing resin 3 is provided on the mounting substrate 2 on which the surface acoustic wave element 1 is mounted.
  • a liquid thermosetting epoxy resin is applied on the mounting substrate 2 on which the surface acoustic wave element 1 is mounted, and the surface of the surface acoustic wave element 1 is covered and then heated. To cure the resin.
  • a thermosetting resin sheet made of an epoxy resin that is heated to be in a semi-molten state is placed on the mounting substrate 2 on which the surface acoustic wave element 1 is mounted, and the surface acoustic wave is obtained. After covering the periphery of the element 1, the resin is further cured by heating.
  • the sealing resin 3 when the sealing resin 3 is provided, even if the resin flows along the side of the wiring electrode 6a, it can be stopped by the recess 6b. That is, as shown in FIG. 2, the resin 3 ′ flowing along the side of the wiring electrode 6 a is stopped by the recess 6 b and does not reach the IDT electrode 5.
  • the intersecting angle between the side of the wiring electrode 6 in which the recess 6b is formed and one side of the recess 6b in contact with the side is 90 degrees, and the flowing resin 3 ′ Stop surely.
  • the recess 6b may be formed in any part of the wiring electrode 6, for example, it may be formed in the connection electrode 6a.
  • the surface acoustic wave element 1 in which one IDT electrode 5 is formed on the piezoelectric substrate 4 is mounted on the mounting substrate 2 to configure the resonator (surface acoustic wave device 100).
  • a plurality of IDT electrodes 5 may be formed on the substrate 4 to constitute a filter.
  • a duplexer may be configured by mounting a plurality of surface acoustic wave elements 1 on the mounting substrate 2.
  • a longitudinally coupled resonator using a plurality of resonance modes may be used.
  • another electronic component may be mounted on the mounting substrate 2 to constitute a module.
  • the IDT electrode 5 formed on the piezoelectric substrate 4 is merely an example, and the logarithm, shape, duty ratio, weighting, etc. are not limited to the above, and various changes can be made.
  • the surface acoustic wave device 200 according to the second embodiment of the present invention is different from the surface acoustic wave device 100 (see FIG. 1) according to the first embodiment described above in that only the surface acoustic wave element 1 is used. 11 was replaced. Other configurations are the same as those of the surface acoustic wave device 100.
  • FIG. 3 shows the surface acoustic wave element 11 used in the surface acoustic wave device 200.
  • FIG. 3 is a plan view showing the main surface of the surface acoustic wave element 11 on the side where the IDT electrode 15 is formed.
  • the surface acoustic wave element 11 includes a piezoelectric substrate 14.
  • An IDT electrode 15 and a pair of wiring electrodes 16 connected to the IDT electrode 15 are formed on one main surface of the piezoelectric substrate 14.
  • the wiring electrode 16 has a connection electrode 16 a at the end opposite to the end connected to the IDT electrode 15. Further, the wiring electrode 16 is formed with a recess 16b from the side to the inside. In the recess 16b of this embodiment, the intersection angle between the side of the wiring electrode 16 and one side of the recess 16b in contact with the side is 75 degrees, and the first embodiment (see FIGS. 1 and 2). It is smaller than 90 degrees of the recess 6b.
  • the recess 16b is for stopping the resin flowing along the side of the wiring electrode 16 when the sealing resin is provided on the mounting substrate on which the surface acoustic wave element 11 is mounted.
  • the recess 16b since the intersection angle between the side of the wiring electrode 16 and one side of the recess 16b in contact with the side is smaller than 90 degrees, the recess 16b more reliably stops the resin. Can do. That is, as shown in FIG. 4, the resin 13 ′ that has flowed along the side edges of the wiring electrode 16 has to change the flow direction once in the recess 16 b, and the momentum of flow weakens and stops reliably. To do.
  • the surface acoustic wave device 300 according to the third embodiment of the present invention is different from the surface acoustic wave device 100 according to the first embodiment described above (see FIG. 1) in that only the surface acoustic wave element 1 is replaced with another surface acoustic wave element. Replaced with 21.
  • Other configurations are the same as those of the surface acoustic wave device 100.
  • FIG. 5 shows the surface acoustic wave element 21 used in the surface acoustic wave device 300.
  • FIG. 3 is a plan view showing the principal surface of the surface acoustic wave element 21 on the side where the IDT electrode 25 is formed.
  • the surface acoustic wave element 21 includes a piezoelectric substrate 24.
  • An IDT electrode 25 and a pair of wiring electrodes 26 connected to the IDT electrode 25 are formed on one main surface of the piezoelectric substrate 24.
  • the wiring electrode 26 has a connection electrode 26 a at the end opposite to the end connected to the IDT electrode 25.
  • the wiring electrode 26 is formed with recesses 26b on opposite sides thereof in a state of being obliquely displaced from each other. In the recess 26b, the intersection angle between the side of the wiring electrode 26 and one side of the recess 26b in contact with the side is 75 degrees. However, the present invention is not limited to this intersection angle. 90 degree
  • times may be sufficient like the recessed part 6b of a form.
  • the concave portions 26b are formed on both opposing sides of the wiring electrode 26 so as to be obliquely displaced from each other. That is, unlike the above-described first embodiment (see FIGS. 1 and 2), the opposing recesses 6b are not formed on both opposing sides of the wiring electrode 6, respectively.
  • a surface acoustic wave device 400 according to the fourth embodiment of the present invention is different from the surface acoustic wave device 100 according to the first embodiment described above (see FIG. 1) only in the surface acoustic wave element 1. Replaced with 31. Other configurations are the same as those of the surface acoustic wave device 100.
  • FIG. 6 shows the surface acoustic wave element 31 used in the surface acoustic wave device 400.
  • FIG. 6 is a plan view showing the main surface of the surface acoustic wave element 31 on the side where the IDT electrode 35 is formed.
  • the surface acoustic wave element 31 includes a piezoelectric substrate 34.
  • An IDT electrode 35 and a pair of wiring electrodes 36 connected to the IDT electrode 35 are formed on one main surface of the piezoelectric substrate 34.
  • the wiring electrode 36 has a connection electrode 36 a at the end opposite to the end connected to the IDT electrode 35.
  • the wiring electrode 36 is formed with two recesses 36b on each opposite side.
  • the sealing resin is provided on the mounting substrate on which the surface acoustic wave element 31 is mounted, the side of the wiring electrode 36 is provided. Even if the resin that has flowed along can not be stopped at the first recess 36b, it can be stopped at the second recess 36b.
  • the surface acoustic wave device 400 of the fourth embodiment it is possible to more reliably prevent the resin from reaching the IDT electrode 35.
  • FIG. 7 shows a surface acoustic wave device 500 according to a fifth embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of the surface acoustic wave device 500.
  • the surface acoustic wave device 500 has a structure in which two surface acoustic wave elements 41 are flip-chip mounted on one mounting substrate 42 and a sealing resin 43 is provided on the surface acoustic wave element 41.
  • the surface acoustic wave element 41 is a filter, and the surface acoustic wave device 500 constitutes a duplexer.
  • the wiring electrode of the surface acoustic wave element 41 is formed with a recess that is a characteristic element of the present invention.
  • the present invention can be configured as a surface acoustic wave device 500 in which a plurality of surface acoustic wave elements are mounted on one mounting substrate.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Provided is a surface acoustic wave device that has a surface acoustic wave element flip-chip mounted on a mounting substrate, has sealing resin formed on the surface acoustic wave element, and wherein the sealing resin is prevented from flowing and reaching an IDT electrode of the surface acoustic wave element. The surface acoustic wave device (100) of the present invention was made to be provided with: a mounting substrate (2) upon which land electrodes (7) are formed; a surface acoustic wave element (1) upon which an IDT electrode (5) and wiring electrodes (6) are formed, and which is flip-chip mounted onto the mounting substrate (2); and sealing resin (3). The surface acoustic wave device (100) was also made to have recess sections (6b) formed on the wiring electrodes (6) of the surface acoustic wave element (1).

Description

弾性表面波デバイスSurface acoustic wave device
　本発明は弾性表面波デバイスに関し、さらに詳しくは、ＩＤＴ電極が形成された弾性表面波素子を実装基板上にフリップチップ実装し、実装された弾性表面波素子上に封止樹脂を設けた弾性表面波デバイスに関する。 The present invention relates to a surface acoustic wave device, and more specifically, a surface acoustic wave element in which an IDT electrode is flip-chip mounted on a mounting substrate, and a sealing resin is provided on the surface acoustic wave element mounted. Wave device.
　近時、たとえば特許文献１（特開２００２－１００９４５号公報）に開示されるような、弾性表面波素子を用いた、共振器、フィルタ、デュプレクサなどの弾性表面波デバイスが、携帯電話などに広く利用されている。 Recently, surface acoustic wave devices such as resonators, filters, duplexers and the like using surface acoustic wave elements as disclosed in, for example, Patent Document 1 (Japanese Patent Laid-Open No. 2002-1000094) are widely used in mobile phones and the like. It's being used.
　このような従来の弾性表面波デバイスの一例として、図８に弾性表面波デバイス６００を示す。ただし、図８（Ａ）は、弾性表面波デバイス６００の断面図、図８（Ｂ）は、弾性表面波デバイス６００に使用された弾性表面波素子１０１の、ＩＤＴ電極が形成された側の主面を示す平面図である。 FIG. 8 shows a surface acoustic wave device 600 as an example of such a conventional surface acoustic wave device. 8A is a cross-sectional view of the surface acoustic wave device 600, and FIG. 8B is a main surface of the surface acoustic wave element 101 used in the surface acoustic wave device 600 on the side where the IDT electrode is formed. It is a top view which shows a surface.
　弾性表面波デバイス６００は、弾性表面波素子１０１を、実装基板１０２にフリップチップ実装し、実装された弾性表面波素子１０１上に封止樹脂１０３を設けた構造からなる。 The surface acoustic wave device 600 has a structure in which a surface acoustic wave element 101 is flip-chip mounted on a mounting substrate 102 and a sealing resin 103 is provided on the surface acoustic wave element 101 mounted.
　弾性表面波素子１０１は、圧電基板１０４を備え、該圧電基板１０４の一方の主面には、ＩＤＴ電極１０５と、ＩＤＴ電極１０５に接続された１対の配線電極１０６とが形成されている。ＩＤＴ電極１０５は、互いに間挿し合う複数の電極指を有する一対のくし形電極により構成されており、たとえば共振器を構成している。配線電極１０６は、ＩＤＴ電極１０５に接続された端部と反対側の端部に、弾性表面波素子１０１を実装基板１０２へフリップチップ実装する際に用いる接続電極１０６ａを有している。 The surface acoustic wave element 101 includes a piezoelectric substrate 104, and an IDT electrode 105 and a pair of wiring electrodes 106 connected to the IDT electrode 105 are formed on one main surface of the piezoelectric substrate 104. The IDT electrode 105 is composed of a pair of comb-shaped electrodes having a plurality of electrode fingers interleaved with each other, and constitutes, for example, a resonator. The wiring electrode 106 has a connection electrode 106 a used when flip-chip mounting the surface acoustic wave element 101 on the mounting substrate 102 at the end opposite to the end connected to the IDT electrode 105.
　実装基板１０２は、一方の主面に、ランド電極１０７が形成されている。ランド電極１０７は、図示しないが、実装基板１０２の内部に形成された配線を経由して、実装基板１０２の端面あるいは他方の主面に形成された外部電極に接続されている。 The mounting substrate 102 has a land electrode 107 formed on one main surface. Although not shown, the land electrode 107 is connected to an external electrode formed on the end surface or the other main surface of the mounting substrate 102 via a wiring formed inside the mounting substrate 102.
　弾性表面波素子１０１は、実装基板１０２にフリップチップ実装されている。具体的には、弾性表面波素子１０１のＩＤＴ電極１０５が形成された側の主面を実装基板１０２側に向け、弾性表面波素子１０１の接続電極１０６ａが、実装基板１０２のランド電極１０７に、バンプ１０８により接合されている。この結果、弾性表面波素子１０１と実装基板１０２との間には空間１０９が形成され、空間１０９により、ＩＤＴ電極１０５による弾性表面波の振動が確保されている。バンプ１０８には、たとえば、金、銅、これらの合金、はんだなどが用いられる。 The surface acoustic wave element 101 is flip-chip mounted on the mounting substrate 102. Specifically, the surface of the surface acoustic wave element 101 on which the IDT electrode 105 is formed faces the mounting substrate 102 side, and the connection electrode 106a of the surface acoustic wave element 101 is connected to the land electrode 107 of the mounting substrate 102. Bonded by bumps 108. As a result, a space 109 is formed between the surface acoustic wave element 101 and the mounting substrate 102, and the vibration of the surface acoustic wave by the IDT electrode 105 is secured by the space 109. For the bump 108, for example, gold, copper, an alloy thereof, solder, or the like is used.
　弾性表面波素子１０１が実装された実装基板１０２上には、封止樹脂１０３が設けられている。封止樹脂１０３は、エポキシ樹脂などからなり、設計上は、弾性表面波素子１０１と実装基板１０２との間の空間１０９には入り込まず、ＩＤＴ電極１０５に到達しないようになっている。 A sealing resin 103 is provided on a mounting substrate 102 on which the surface acoustic wave element 101 is mounted. The sealing resin 103 is made of an epoxy resin or the like, and is not designed to enter the space 109 between the surface acoustic wave element 101 and the mounting substrate 102 and does not reach the IDT electrode 105.
　かかる構造からなる、従来の弾性表面波デバイス６００は、たとえば、次の方法で製造される。 A conventional surface acoustic wave device 600 having such a structure is manufactured, for example, by the following method.
　まず、予め圧電基板１０４にＩＤＴ電極１０５、配線電極１０６が形成された弾性表面波素子１０１と、予めランド電極１０７が形成された実装基板１０２とを用意する。 First, a surface acoustic wave element 101 in which an IDT electrode 105 and a wiring electrode 106 are formed in advance on a piezoelectric substrate 104 and a mounting substrate 102 in which a land electrode 107 is formed in advance are prepared.
　次に、弾性表面波素子１０１の接続電極１０６ａ上に、常用されている方法により、バンプ１０８を形成する。 Next, bumps 108 are formed on the connection electrodes 106a of the surface acoustic wave element 101 by a commonly used method.
　次に、弾性表面波素子１０１を、ＩＤＴ電極１０５が形成されている側の主面を実装基板１０２側に向けて、実装基板１０２上に配置する。このとき、弾性表面波素子１０１の接続電極１０６ａ上に形成されたバンプ１０８が、実装基板１０２のランド電極１０７上に載るように配置する。 Next, the surface acoustic wave element 101 is disposed on the mounting substrate 102 with the main surface on which the IDT electrode 105 is formed facing the mounting substrate 102 side. At this time, the bumps 108 formed on the connection electrodes 106 a of the surface acoustic wave element 101 are arranged so as to be placed on the land electrodes 107 of the mounting substrate 102.
　次に、弾性表面波素子１０１の接続電極１０６ａ上に形成されたバンプ１０８を、実装基板１０２のランド電極１０７に接合する。バンプ１０８がはんだにより形成されている場合は、たとえば加熱により、バンプ１０８が金により形成されている場合は、たとえば加熱、加圧、超音波振動を組合せることによりおこなう。これにより、弾性表面波素子１０１の実装基板１０２へのフリップチップ実装が完了する。 Next, the bumps 108 formed on the connection electrodes 106 a of the surface acoustic wave element 101 are bonded to the land electrodes 107 of the mounting substrate 102. When the bumps 108 are formed of solder, for example, heating is performed, and when the bumps 108 are formed of gold, for example, heating, pressurization, and ultrasonic vibration are combined. Thereby, the flip chip mounting of the surface acoustic wave element 101 to the mounting substrate 102 is completed.
　最後に、弾性表面波素子１０１が実装された実装基板１０２上に、封止樹脂１０３を設ける。具体的には、たとえば、弾性表面波素子１０１が実装された実装基板１０２上に、エポキシなどからなる、熱硬化性の樹脂を塗布し、弾性表面波素子１０１の周囲を覆ったうえで、加熱して樹脂を硬化させる。あるいは、弾性表面波素子１０１が実装された実装基板１０２上に、加熱されて半溶融状態となった、エポキシなどからなる、熱硬化性の樹脂シートを載せ、弾性表面波素子１０１の周囲を覆ったうえで、さらに加熱して樹脂を硬化させる。 Finally, the sealing resin 103 is provided on the mounting substrate 102 on which the surface acoustic wave element 101 is mounted. Specifically, for example, a thermosetting resin made of epoxy or the like is applied to the mounting substrate 102 on which the surface acoustic wave element 101 is mounted, and the surface of the surface acoustic wave element 101 is covered and then heated. To cure the resin. Alternatively, a thermosetting resin sheet made of epoxy or the like that is heated to be in a semi-molten state is placed on the mounting substrate 102 on which the surface acoustic wave element 101 is mounted, and covers the surface of the surface acoustic wave element 101. In addition, the resin is further heated to cure the resin.
　以上により、従来の弾性表面波デバイス６００は完成する。 Thus, the conventional surface acoustic wave device 600 is completed.
特開２００２－１００９４５号公報Japanese Patent Laid-Open No. 2002-1000094
　しかしながら、上述した従来の弾性表面波デバイス６００には、封止樹脂１０３を設ける際に、流動した樹脂がＩＤＴ電極１０５に到達してしまい、弾性表面波デバイス６００の特性が劣化してしまう、あるいは、場合によっては、弾性表面波デバイス６００が機能しなくなってしまうという問題があった。 However, in the conventional surface acoustic wave device 600 described above, when the sealing resin 103 is provided, the flowed resin reaches the IDT electrode 105 and the characteristics of the surface acoustic wave device 600 are deteriorated. In some cases, the surface acoustic wave device 600 may not function.
　すなわち、封止樹脂１０３を構成する樹脂は、図８（Ａ）に示すように、弾性表面波素子１０１と実装基板１０２との間の空間１０９には入り込まないように設計されている。しかしながら、封止樹脂１０３を設ける際に、樹脂の粘度が必要以上に低下してしまった場合などに、図９に鎖線矢印で示すように、樹脂１０３’が配線電極１０６の側辺に沿って流動してしまい、ＩＤＴ電極１０５に到達してしまうことがあった。 That is, the resin constituting the sealing resin 103 is designed not to enter the space 109 between the surface acoustic wave element 101 and the mounting substrate 102 as shown in FIG. However, when the sealing resin 103 is provided, when the viscosity of the resin has decreased more than necessary, the resin 103 ′ extends along the side of the wiring electrode 106, as indicated by a chain line arrow in FIG. 9. In some cases, the fluid flows and reaches the IDT electrode 105.
　本発明は、上述した従来の弾性表面波デバイスの有する課題を解決するためになされたものである。その手段として、本発明の弾性表面波デバイスは、一方の主面に、ランド電極が形成された実装基板と、一方の主面に、少なくとも１個のＩＤＴ電極と、そのＩＤＴ電極に接続された配線電極とが形成され、かつ、実装基板のランド電極に、配線電極の所定の部分が接続されて、実装基板にフリップチップ実装された弾性表面波素子と、弾性表面波素子を覆って、実装基板上に設けられた封止樹脂とを備え、さらに、弾性表面波素子の配線電極に、配線電極の側辺から内部に向かって、凹部を形成するようにした。本発明の弾性表面波デバイスは、この凹部により、封止樹脂を設ける際に、配線電極の側辺に沿って流動してきた樹脂を停止させることができ、樹脂がＩＤＴ電極に到達するのを防止することができる。 The present invention has been made to solve the problems of the conventional surface acoustic wave device described above. As the means, the surface acoustic wave device of the present invention is connected to a mounting substrate having land electrodes formed on one main surface, at least one IDT electrode on one main surface, and the IDT electrode. A wiring electrode is formed, and a predetermined portion of the wiring electrode is connected to the land electrode of the mounting board, and the surface acoustic wave element flip-chip mounted on the mounting board, and the surface acoustic wave element is covered and mounted. And a sealing resin provided on the substrate, and a recess is formed in the wiring electrode of the surface acoustic wave element from the side of the wiring electrode to the inside. The surface acoustic wave device of the present invention can stop the resin that has flowed along the side of the wiring electrode when the sealing resin is provided by the recess, and prevent the resin from reaching the IDT electrode. can do.
　なお、凹部が形成された配線電極の側辺と、その側辺に接する凹部の一辺との交差角度は、９０度、あるいは９０度よりも小さいことが好ましい。９０度であれば、流動してきた樹脂を、確実に停止させることができるからである。また、９０度よりも小さければ、流動してきた樹脂を、より確実に停止させることができるからである。 Note that the intersection angle between the side of the wiring electrode in which the recess is formed and one side of the recess in contact with the side is preferably 90 degrees or smaller than 90 degrees. This is because if it is 90 degrees, the flowing resin can be stopped reliably. Moreover, if it is smaller than 90 degrees, the flowing resin can be stopped more reliably.
　また、凹部は、配線電極の対向する両側辺に、それぞれ、相互に斜めにずれた状態で形成されることが好ましい。この場合には、配線電極の配線抵抗を小さく抑えることができるからである。 Moreover, it is preferable that the recesses are formed on both opposite sides of the wiring electrode in a state of being obliquely displaced from each other. In this case, the wiring resistance of the wiring electrode can be kept small.
　また、凹部は、配線電極の１つの側辺に、複数個形成されていることが好ましい。この場合には、１つ目の凹部で流動してきた樹脂を停止させることができなくても、２つ目以降の凹部で停止させることができるからである。 Further, it is preferable that a plurality of recesses are formed on one side of the wiring electrode. In this case, even if the resin flowing in the first recess cannot be stopped, it can be stopped in the second and subsequent recesses.
　上述した構成からなる本発明の弾性表面波デバイスは、封止樹脂を設ける際に、配線電極の側辺に沿って流動してきた樹脂を、配線電極に形成された凹部により停止させることができる。したがって、本発明の弾性表面波デバイスは、流動した樹脂がＩＤＴ電極に到達して、ＩＤＴ電極による弾性表面波の振動が妨げられてしまうことがなく、特性が劣化したり、機能しなくなったりしてしまうことがない。 In the surface acoustic wave device of the present invention having the above-described configuration, when the sealing resin is provided, the resin flowing along the side of the wiring electrode can be stopped by the recess formed in the wiring electrode. Therefore, in the surface acoustic wave device of the present invention, the flowed resin does not reach the IDT electrode and the vibration of the surface acoustic wave by the IDT electrode is not hindered, and the characteristics are deteriorated or the function does not function. There is no end.
本発明の第１実施形態にかかる弾性表面波デバイス１００を示し、図１（Ａ）は弾性表面波デバイス１００の断面図、図１（Ｂ）は弾性表面波デバイス１００に使用された弾性表面波素子１のＩＤＴ電極５が形成された側の主面を示す平面図である。1 shows a surface acoustic wave device 100 according to a first embodiment of the present invention, in which FIG. 1A is a cross-sectional view of the surface acoustic wave device 100, and FIG. 1B is a surface acoustic wave used in the surface acoustic wave device 100. 3 is a plan view showing a main surface of an element 1 on which an IDT electrode 5 is formed. FIG. 本発明の第１実施形態にかかる弾性表面波デバイス１００において、樹脂３’の配線電極６の側辺に沿った流動が、凹部６ｂにより停止された状態を示す平面図である。In the surface acoustic wave device 100 according to the first embodiment of the present invention, it is a plan view showing a state in which the flow of the resin 3 ′ along the side of the wiring electrode 6 is stopped by the recess 6 b. 本発明の第２実施形態にかかる弾性表面波デバイス２００に使用された弾性表面波素子１１のＩＤＴ電極５が形成された側の主面を示す平面図である。It is a top view which shows the main surface at the side in which the IDT electrode 5 of the surface acoustic wave element 11 used for the surface acoustic wave device 200 concerning 2nd Embodiment of this invention was formed. 本発明の第２実施形態にかかる弾性表面波デバイス２００において、樹脂３’の配線電極１６の側辺に沿った流動が、凹部１６ｂにより停止された状態を示す平面図である。In the surface acoustic wave device 200 concerning 2nd Embodiment of this invention, it is a top view which shows the state where the flow along the side of the wiring electrode 16 of resin 3 'was stopped by the recessed part 16b. 本発明の第３実施形態にかかる弾性表面波デバイス３００に使用された弾性表面波素子２１のＩＤＴ電極５が形成された側の主面を示す平面図である。It is a top view which shows the main surface at the side in which the IDT electrode 5 of the surface acoustic wave element 21 used for the surface acoustic wave device 300 concerning 3rd Embodiment of this invention was formed. 本発明の第４実施形態にかかる弾性表面波デバイス４００に使用された弾性表面波素子３１のＩＤＴ電極５が形成された側の主面を示す平面図である。It is a top view which shows the main surface at the side in which the IDT electrode 5 of the surface acoustic wave element 31 used for the surface acoustic wave device 400 concerning 4th Embodiment of this invention was formed. 本発明の第５実施形態にかかる弾性表面波デバイス５００を示す断面図である。It is sectional drawing which shows the surface acoustic wave device 500 concerning 5th Embodiment of this invention. 従来の弾性表面波デバイス６００を示し、図８（Ａ）は弾性表面波デバイス６００の断面図、図１（Ｂ）は弾性表面波デバイス６００に使用された弾性表面波素子１０１のＩＤＴ電極１０５が形成された側の主面を示す平面図である。8 shows a conventional surface acoustic wave device 600, FIG. 8A is a sectional view of the surface acoustic wave device 600, and FIG. 1B shows an IDT electrode 105 of the surface acoustic wave element 101 used in the surface acoustic wave device 600. It is a top view which shows the main surface of the formed side. 従来の弾性表面波デバイス６００において、樹脂１０３’が配線電極１０６の側辺に沿って流動し、ＩＤＴ電極１０５に到達した状態を示す平面図である。In the conventional surface acoustic wave device 600, the resin 103 ′ flows along the side of the wiring electrode 106 and reaches the IDT electrode 105.
　以下、図面とともに、本発明を実施するための形態について説明する。 Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.
　［第１実施形態］
　図１に、本発明の第１実施形態にかかる弾性表面波デバイス１００を示す。ただし、図１（Ａ）は、弾性表面波デバイス１００の断面図、図１（Ｂ）は、弾性表面波デバイス１００に使用された弾性表面波素子１の、ＩＤＴ電極５が形成された側の主面を示す平面図である。 [First Embodiment]
FIG. 1 shows a surface acoustic wave device 100 according to a first embodiment of the present invention. 1A is a sectional view of the surface acoustic wave device 100, and FIG. 1B is a side view of the surface acoustic wave element 1 used in the surface acoustic wave device 100 on which the IDT electrode 5 is formed. It is a top view which shows a main surface.
　弾性表面波デバイス１００は、弾性表面波素子１を、実装基板２にフリップチップ実装し、実装された弾性表面波素子１上に封止樹脂３を設けた構造からなる。 The surface acoustic wave device 100 has a structure in which a surface acoustic wave element 1 is flip-chip mounted on a mounting substrate 2 and a sealing resin 3 is provided on the mounted surface acoustic wave element 1.
　弾性表面波素子１は、圧電基板４を備える。圧電基板４の材質には、たとえば、ＬｉＮｂＯ3やＬｉＴａＯ3などを用いることができる。 The surface acoustic wave element 1 includes a piezoelectric substrate 4. For example, LiNbO 3 or LiTaO 3 can be used as the material of the piezoelectric substrate 4.
　圧電基板４の一方の主面には、ＩＤＴ電極５が形成されている。ＩＤＴ電極５は、互いに間挿し合う複数の電極指を有する一対のくし形電極により構成されており、たとえば共振器を構成している。本実施形態においては、圧電基板４に１個のＩＤＴ電極５を形成しているが、複数のＩＤＴ電極を形成し、それらを所定の回路に接続して、フィルタやデュプレクサを構成するようにしても良い。ＩＤＴ電極５の対数、形状、デューティー比、重み付けなどについては、種々の選択をなすことができる。ＩＤＴ電極５の材質には、アルミニウム、金、ニッケル、銅、クロム、白金、銀、タンタル、タングステン、モリブデン、チタンや、これらの合金などを用いることができる。ＩＤＴ電極５の厚みは、たとえば、０．１μｍ～０．６μｍ程度である。なお、ＩＤＴ電極５は、層ごとに材質を変えて、多層に形成するようにしても良い。 An IDT electrode 5 is formed on one main surface of the piezoelectric substrate 4. The IDT electrode 5 is composed of a pair of comb-shaped electrodes having a plurality of electrode fingers interleaved with each other, and constitutes, for example, a resonator. In the present embodiment, one IDT electrode 5 is formed on the piezoelectric substrate 4, but a plurality of IDT electrodes are formed and connected to a predetermined circuit so as to constitute a filter or a duplexer. Also good. Various selections can be made for the logarithm, shape, duty ratio, weighting, and the like of the IDT electrode 5. As the material of the IDT electrode 5, aluminum, gold, nickel, copper, chromium, platinum, silver, tantalum, tungsten, molybdenum, titanium, alloys thereof, or the like can be used. The thickness of the IDT electrode 5 is, for example, about 0.1 μm to 0.6 μm. The IDT electrode 5 may be formed in multiple layers by changing the material for each layer.
　圧電基板４の一方主面には、さらに、ＩＤＴ電極５に接続された、１対の配線電極６が形成されている。配線電極６は、ＩＤＴ電極５に接続された端部と反対側の端部に、弾性表面波素子１を実装基板２へフリップチップ実装する際に用いる接続電極６ａを有している。また、配線電極６には、側辺から内部に向かって、凹部６ｂが形成されている。この凹部６ｂは、本発明の特徴的な要素であり、後で説明するように、封止樹脂３を設ける際に、配線電極６の側辺に沿って流動してきた樹脂を停止させるためのものである。本実施形態においては、１対の配線電極６それぞれにおいて、対向する両側辺に、それぞれ対向して、合計４個の凹部６ｂが形成されている。また、本実施形態においては、配線電極６の側辺と、その側辺に接する凹部６ｂの一辺との交差角度が９０度になっている。配線電極６の材質には、ＩＤＴ電極５の材質と同じものを用いることができる。あるいは、ＩＤＴ電極５と異なる金属を用いるようにしても良い。 A pair of wiring electrodes 6 connected to the IDT electrode 5 are further formed on one main surface of the piezoelectric substrate 4. The wiring electrode 6 has a connection electrode 6 a that is used when the surface acoustic wave element 1 is flip-chip mounted on the mounting substrate 2 at the end opposite to the end connected to the IDT electrode 5. Further, the wiring electrode 6 is formed with a recess 6b from the side to the inside. The recess 6b is a characteristic element of the present invention, and stops the resin flowing along the side of the wiring electrode 6 when the sealing resin 3 is provided, as will be described later. It is. In the present embodiment, in each of the pair of wiring electrodes 6, a total of four recesses 6 b are formed on both opposing sides. In the present embodiment, the intersection angle between the side of the wiring electrode 6 and one side of the recess 6b in contact with the side is 90 degrees. As the material of the wiring electrode 6, the same material as that of the IDT electrode 5 can be used. Alternatively, a metal different from the IDT electrode 5 may be used.
　実装基板２は、材質は特に限定されないが、たとえば、絶縁性のセラミックや樹脂などが用いられる。実装基板２の一方の主面には、ランド電極７が形成されている。ランド電極７は、図示しないが、実装基板２の内部に形成された配線を経由して、実装基板２の端面あるいは他方の主面に形成された外部電極に接続されている。ランド電極７の材質には、金、銅、銀、ニッケル、タングステン、これらの合金などを用いることができる。 The material of the mounting substrate 2 is not particularly limited, but for example, insulating ceramic or resin is used. A land electrode 7 is formed on one main surface of the mounting substrate 2. Although not shown, the land electrode 7 is connected to an external electrode formed on the end surface or the other main surface of the mounting substrate 2 via a wiring formed inside the mounting substrate 2. As the material of the land electrode 7, gold, copper, silver, nickel, tungsten, alloys thereof, or the like can be used.
　弾性表面波素子１は、実装基板２にフリップチップ実装されている。具体的には、弾性表面波素子１のＩＤＴ電極５が形成された側の主面を実装基板２側に向け、弾性表面波素子１の接続電極６ａが、実装基板２のランド電極７に、バンプ８により接合されている。この結果、弾性表面波素子１と実装基板２との間には空間９が形成され、空間９により、ＩＤＴ電極５による弾性表面波の振動が確保されている。なお、空間９の高さは、たとえば、ＩＤＴ電極５および配線電極６の厚みが０．５μｍ、ランド電極７の厚みが１．０μｍ、接合後のバンプ８の厚みが２０.０μｍの場合、これらを合計した２１．５μｍ程度になる。バンプ８の材質には、たとえば、金、銅、これらの合金、はんだなどを用いることができる。 The surface acoustic wave element 1 is flip-chip mounted on a mounting substrate 2. Specifically, the surface of the surface acoustic wave element 1 on which the IDT electrode 5 is formed is directed toward the mounting substrate 2, and the connection electrode 6 a of the surface acoustic wave element 1 is connected to the land electrode 7 of the mounting substrate 2. Bonded by bumps 8. As a result, a space 9 is formed between the surface acoustic wave element 1 and the mounting substrate 2, and the vibration of the surface acoustic wave by the IDT electrode 5 is secured by the space 9. The height of the space 9 is, for example, when the IDT electrode 5 and the wiring electrode 6 have a thickness of 0.5 μm, the land electrode 7 has a thickness of 1.0 μm, and the bump 8 after bonding has a thickness of 20.0 μm. Is about 21.5 μm. As the material of the bump 8, for example, gold, copper, alloys thereof, solder, or the like can be used.
　弾性表面波素子１が実装された実装基板２上には、封止樹脂３が設けられている。封止樹脂３には、たとえば、エポキシ樹脂を用いることができる。なお、後で説明するように、封止樹脂３を設ける際に、万一、封止樹脂３を構成する樹脂が配線電極６の側辺に沿って流動しても、配線電極６に形成された凹部６ｂにより停止されるため、樹脂がＩＤＴ電極５に到達することはない。 A sealing resin 3 is provided on a mounting substrate 2 on which the surface acoustic wave element 1 is mounted. For the sealing resin 3, for example, an epoxy resin can be used. As will be described later, when the sealing resin 3 is provided, even if the resin constituting the sealing resin 3 flows along the side of the wiring electrode 6, it is formed on the wiring electrode 6. The resin does not reach the IDT electrode 5 because it is stopped by the recessed portion 6b.
　かかる構造からなる、本発明の第１実施形態にかかる弾性表面波デバイス１００は、たとえば、次の方法で製造される。 The surface acoustic wave device 100 according to the first embodiment of the present invention having such a structure is manufactured by, for example, the following method.
　まず、弾性表面波素子１と、実装基板２とを用意する。 First, a surface acoustic wave element 1 and a mounting substrate 2 are prepared.
　弾性表面波素子１は、圧電基板４を用意し、圧電基板４に、たとえばフォトリソグラフィー技術を用いて、ＩＤＴ電極５、配線電極６を形成することにより得る。具体的には、たとえば、圧電基板４の一方の主面に、フォトレジストを塗布し、露光し、現像して、ＩＤＴ電極５、配線電極６の形状に対応した開口部を有するフォトレジストを形成する。次に、フォトレジスト上に、ＩＤＴ電極５、配線電極６になる金属を、真空蒸着、スパッタリング、ＣＶＤなどの方法により成膜する。次に、薬剤などを用いてフォトレジストを除去し、開口部に成膜された金属膜のみを圧電基板４上に残し、所望の形状からなるＩＤＴ電極５、配線電極６を得る。このとき、配線電極６に凹部６ｂも形成される。なお、圧電基板４へのＩＤＴ電極５、配線電極６の形成は、個々の圧電基板４に対しておこなうのではなく、多数個分の圧電基板４を含んだウエハを用意し、そのウエハにそれぞれのＩＤＴ電極５、配線電極６を形成した後に、ダイシングにより各圧電基板４に分割するようにしても良い。また、ＩＤＴ電極と配線電極の電極形成は別工程でおこなってもよい。 The surface acoustic wave element 1 is obtained by preparing a piezoelectric substrate 4 and forming the IDT electrode 5 and the wiring electrode 6 on the piezoelectric substrate 4 by using, for example, a photolithography technique. Specifically, for example, a photoresist is applied to one main surface of the piezoelectric substrate 4, exposed, and developed to form a photoresist having openings corresponding to the shapes of the IDT electrode 5 and the wiring electrode 6. To do. Next, a metal to be the IDT electrode 5 and the wiring electrode 6 is formed on the photoresist by a method such as vacuum deposition, sputtering, or CVD. Next, the photoresist is removed using a chemical or the like, and only the metal film formed in the opening is left on the piezoelectric substrate 4 to obtain the IDT electrode 5 and the wiring electrode 6 having desired shapes. At this time, a recess 6 b is also formed in the wiring electrode 6. The formation of the IDT electrode 5 and the wiring electrode 6 on the piezoelectric substrate 4 is not performed on each piezoelectric substrate 4, but a wafer including a large number of piezoelectric substrates 4 is prepared, and each of the wafers is prepared. After the IDT electrode 5 and the wiring electrode 6 are formed, the piezoelectric substrate 4 may be divided by dicing. Further, the electrode formation of the IDT electrode and the wiring electrode may be performed in separate steps.
　一方、実装基板２は、常用されている基板製造技術を用いて得ることができる。実装基板２がセラミック多層基板である場合は、たとえば、複数の絶縁性のセラミックのグリーンシートを用意し、各グリーンシートに導電性ペーストを用いて必要な表面配線、ビアホールを形成し、それらのグリーンシートを所定の順番に積層し、加圧し、所定のプロファイルで焼成して、一方の主面にランド電極７が形成され、内部に必要な配線（図示せず）、端面あるいは他方の主面に外部電極（図示せず）が形成された実装基板２を得ることができる。なお、この実装基板２も、多数個分の大きなマザーグリーンシートを用意し、マザーグリーンシートに各実装基板２用のビアホール、表面配線を形成し、積層し、加圧し、焼成した後に、各実装基板２に分割して製造することができる。 On the other hand, the mounting substrate 2 can be obtained using a commonly used substrate manufacturing technique. When the mounting substrate 2 is a ceramic multilayer substrate, for example, a plurality of insulating ceramic green sheets are prepared, and necessary surface wiring and via holes are formed on each green sheet using a conductive paste. Sheets are stacked in a predetermined order, pressed, fired with a predetermined profile, land electrodes 7 are formed on one main surface, and necessary wiring (not shown), end surfaces or the other main surface are formed inside. A mounting substrate 2 on which external electrodes (not shown) are formed can be obtained. The mounting substrate 2 is also prepared with a large number of large mother green sheets, via holes and surface wiring for each mounting substrate 2 are formed on the mother green sheet, stacked, pressed, fired, and then mounted. The substrate 2 can be divided and manufactured.
　次に、弾性表面波素子１の接続電極６ａ上に、バンプ８を形成する。具体的には、たとえば、金、銅などからなるワイヤを用意しておき、ボールボンディング法により、接続電極６ａ上にバンプ８を形成する。あるいは、バンプ８は、所望の金属を含む導電性接着剤を、接続電極６ａ上に所望の形状に塗布することにより形成しても良い。 Next, bumps 8 are formed on the connection electrodes 6 a of the surface acoustic wave element 1. Specifically, for example, a wire made of gold, copper or the like is prepared, and the bump 8 is formed on the connection electrode 6a by a ball bonding method. Alternatively, the bumps 8 may be formed by applying a conductive adhesive containing a desired metal onto the connection electrodes 6a in a desired shape.
　次に、弾性表面波素子１を、ＩＤＴ電極５が形成されている側の主面を実装基板２側に向けて、実装基板２上に配置する。このとき、弾性表面波素子１の接続電極６ａ上に形成されたバンプ８が、実装基板２のランド電極７上に載るように配置する。 Next, the surface acoustic wave element 1 is disposed on the mounting substrate 2 with the main surface on which the IDT electrode 5 is formed facing the mounting substrate 2 side. At this time, the bumps 8 formed on the connection electrodes 6 a of the surface acoustic wave element 1 are arranged so as to be placed on the land electrodes 7 of the mounting substrate 2.
　次に、弾性表面波素子１の接続電極６ａ上に形成されたバンプ８を、実装基板２のランド電極７に接合する。バンプ８が金により形成されている場合は、たとえば加熱、加圧、超音波振動を組合せることによりおこなう。これにより、弾性表面波素子１の実装基板２へのフリップチップ実装が完了する。 Next, the bumps 8 formed on the connection electrodes 6 a of the surface acoustic wave element 1 are bonded to the land electrodes 7 of the mounting substrate 2. When the bump 8 is formed of gold, for example, it is performed by combining heating, pressurization, and ultrasonic vibration. Thereby, the flip chip mounting of the surface acoustic wave element 1 to the mounting substrate 2 is completed.
　最後に、弾性表面波素子１が実装された実装基板２上に、封止樹脂３を設ける。具体的には、たとえば、弾性表面波素子１が実装された実装基板２上に、液状で、熱硬化性のエポキシ樹脂を塗布し、弾性表面波素子１の周囲を覆ったうえで、加熱して樹脂を硬化させる。あるいは、別の方法としては、弾性表面波素子１が実装された実装基板２上に、加熱されて半溶融状態となった、エポキシ樹脂からなる、熱硬化性の樹脂シートを載せ、弾性表面波素子１の周囲を覆ったうえで、さらに加熱して樹脂を硬化させる。 Finally, the sealing resin 3 is provided on the mounting substrate 2 on which the surface acoustic wave element 1 is mounted. Specifically, for example, a liquid thermosetting epoxy resin is applied on the mounting substrate 2 on which the surface acoustic wave element 1 is mounted, and the surface of the surface acoustic wave element 1 is covered and then heated. To cure the resin. Alternatively, as another method, a thermosetting resin sheet made of an epoxy resin that is heated to be in a semi-molten state is placed on the mounting substrate 2 on which the surface acoustic wave element 1 is mounted, and the surface acoustic wave is obtained. After covering the periphery of the element 1, the resin is further cured by heating.
　本発明においては、上述の封止樹脂３を設ける際に、樹脂が配線電極６ａの側辺に沿って流動しても、凹部６ｂにより停止させることができる。すなわち、図２に示すように、配線電極６ａの側辺に沿って流動した樹脂３’は、凹部６ｂにより停止され、ＩＤＴ電極５に到達することがない。なお、本実施形態においては、凹部６ｂが形成された配線電極６の側辺と、その側辺に接する凹部６ｂの一辺との交差角度が９０度になっており、流動してきた樹脂３’は確実に停止される。 In the present invention, when the sealing resin 3 is provided, even if the resin flows along the side of the wiring electrode 6a, it can be stopped by the recess 6b. That is, as shown in FIG. 2, the resin 3 ′ flowing along the side of the wiring electrode 6 a is stopped by the recess 6 b and does not reach the IDT electrode 5. In the present embodiment, the intersecting angle between the side of the wiring electrode 6 in which the recess 6b is formed and one side of the recess 6b in contact with the side is 90 degrees, and the flowing resin 3 ′ Stop surely.
　以上、本発明の第１実施形態にかかる弾性表面波デバイス１００の構成、および製造方法の一例について説明した。しかしながら、本発明がこれらの内容に限定されることはなく、発明の主旨に沿って、種々の変更を加えることができる。 The configuration of the surface acoustic wave device 100 according to the first embodiment of the present invention and the example of the manufacturing method have been described above. However, the present invention is not limited to these contents, and various modifications can be made along the gist of the invention.
　たとえば、凹部６ｂは、配線電極６のどの部分に形成しても良く、たとえば、接続電極６ａに形成するようにしても良い。 For example, the recess 6b may be formed in any part of the wiring electrode 6, for example, it may be formed in the connection electrode 6a.
　また、第１実施形態では、圧電基板４に１個のＩＤＴ電極５が形成された弾性表面波素子１を実装基板２に実装して共振器（弾性表面波デバイス１００）を構成したが、圧電基板４に複数のＩＤＴ電極５を形成し、フィルタを構成するようにしても良い。あるいは、実装基板２に複数の弾性表面波素子１を実装して、デュプレクサを構成するようにしても良い。また、複数の共振モードを利用した縦結合型共振子でもよい。あるいは、実装基板２に、弾性表面波素子１に加えて、さらに別の電子部品を実装し、モジュールを構成するようにしても良い。 In the first embodiment, the surface acoustic wave element 1 in which one IDT electrode 5 is formed on the piezoelectric substrate 4 is mounted on the mounting substrate 2 to configure the resonator (surface acoustic wave device 100). A plurality of IDT electrodes 5 may be formed on the substrate 4 to constitute a filter. Alternatively, a duplexer may be configured by mounting a plurality of surface acoustic wave elements 1 on the mounting substrate 2. Further, a longitudinally coupled resonator using a plurality of resonance modes may be used. Alternatively, in addition to the surface acoustic wave element 1, another electronic component may be mounted on the mounting substrate 2 to constitute a module.
　また、圧電基板４に形成されたＩＤＴ電極５はあくまでも例示であり、対数、形状、デューティー比、重み付けなどが上記に限定されることはなく、種々の変更を加えることができる。 Further, the IDT electrode 5 formed on the piezoelectric substrate 4 is merely an example, and the logarithm, shape, duty ratio, weighting, etc. are not limited to the above, and various changes can be made.
　［第２実施形態］
　本発明の第２実施形態にかかる弾性表面波デバイス２００は、上述した第１実施形態にかかる弾性表面波デバイス１００（図１参照）の、弾性表面波素子１のみを、別の弾性表面波素子１１に置き換えた。他の構成については、弾性表面波デバイス１００と同じである。 [Second Embodiment]
The surface acoustic wave device 200 according to the second embodiment of the present invention is different from the surface acoustic wave device 100 (see FIG. 1) according to the first embodiment described above in that only the surface acoustic wave element 1 is used. 11 was replaced. Other configurations are the same as those of the surface acoustic wave device 100.
　図３に、弾性表面波デバイス２００に使用された弾性表面波素子１１を示す。ただし、図３は、弾性表面波素子１１の、ＩＤＴ電極１５が形成された側の主面を示す平面図である。 FIG. 3 shows the surface acoustic wave element 11 used in the surface acoustic wave device 200. However, FIG. 3 is a plan view showing the main surface of the surface acoustic wave element 11 on the side where the IDT electrode 15 is formed.
　弾性表面波素子１１は、圧電基板１４を備える。圧電基板１４の一方の主面には、ＩＤＴ電極１５と、ＩＤＴ電極１５に接続された１対の配線電極１６が形成されている。配線電極１６は、ＩＤＴ電極１５に接続された端部と反対側の端部に接続電極１６ａを有する。また、配線電極１６には、側辺から内部に向かって、凹部１６ｂが形成されている。本実施形態の凹部１６ｂにおいては、配線電極１６の側辺と、その側辺に接する凹部１６ｂの一辺との交差角度が７５度になっており、第１実施形態（図１、図２参照）の凹部６ｂの９０度よりも小さくなっている。 The surface acoustic wave element 11 includes a piezoelectric substrate 14. An IDT electrode 15 and a pair of wiring electrodes 16 connected to the IDT electrode 15 are formed on one main surface of the piezoelectric substrate 14. The wiring electrode 16 has a connection electrode 16 a at the end opposite to the end connected to the IDT electrode 15. Further, the wiring electrode 16 is formed with a recess 16b from the side to the inside. In the recess 16b of this embodiment, the intersection angle between the side of the wiring electrode 16 and one side of the recess 16b in contact with the side is 75 degrees, and the first embodiment (see FIGS. 1 and 2). It is smaller than 90 degrees of the recess 6b.
　上述のとおり、凹部１６ｂは、弾性表面波素子１１を実装した実装基板上に封止樹脂を設ける際に、配線電極１６の側辺に沿って流動した樹脂を停止させるためのものである。本実施形態においては、配線電極１６の側辺と、その側辺に接する凹部１６ｂの一辺との交差角度が９０度よりも小さくなっているため、凹部１６ｂは、より確実に樹脂を停止させることができる。すなわち、図４に示すように、配線電極１６の側辺に沿って流動してきた樹脂１３’は、凹部１６ｂにおいて、いったん流動方向を大きく転換させなければならず、流動の勢いが弱まり確実に停止する。 As described above, the recess 16b is for stopping the resin flowing along the side of the wiring electrode 16 when the sealing resin is provided on the mounting substrate on which the surface acoustic wave element 11 is mounted. In the present embodiment, since the intersection angle between the side of the wiring electrode 16 and one side of the recess 16b in contact with the side is smaller than 90 degrees, the recess 16b more reliably stops the resin. Can do. That is, as shown in FIG. 4, the resin 13 ′ that has flowed along the side edges of the wiring electrode 16 has to change the flow direction once in the recess 16 b, and the momentum of flow weakens and stops reliably. To do.
　第２実施形態の弾性表面波デバイス２００においては、樹脂のＩＤＴ電極１５への到達を、より確実に防止することができる。 In the surface acoustic wave device 200 of the second embodiment, it is possible to more reliably prevent the resin from reaching the IDT electrode 15.
　［第３実施形態］
　本発明の第３実施形態にかかる弾性表面波デバイス３００は、上述した第１実施形態にかかる弾性表面波デバイス１００（図１参照）の、弾性表面波素子１のみを、別の弾性表面波素子２１に置き換えた。他の構成については、弾性表面波デバイス１００と同じである。 [Third Embodiment]
The surface acoustic wave device 300 according to the third embodiment of the present invention is different from the surface acoustic wave device 100 according to the first embodiment described above (see FIG. 1) in that only the surface acoustic wave element 1 is replaced with another surface acoustic wave element. Replaced with 21. Other configurations are the same as those of the surface acoustic wave device 100.
　図５に、弾性表面波デバイス３００に使用された弾性表面波素子２１を示す。ただし、図３は、弾性表面波素子２１の、ＩＤＴ電極２５が形成された側の主面を示す平面図である。 FIG. 5 shows the surface acoustic wave element 21 used in the surface acoustic wave device 300. However, FIG. 3 is a plan view showing the principal surface of the surface acoustic wave element 21 on the side where the IDT electrode 25 is formed.
　弾性表面波素子２１は、圧電基板２４を備える。圧電基板２４の一方の主面には、ＩＤＴ電極２５と、ＩＤＴ電極２５に接続された１対の配線電極２６が形成されている。配線電極２６は、ＩＤＴ電極２５に接続された端部と反対側の端部に接続電極２６ａを有する。また、配線電極２６には、対向する両側辺に、それぞれ、相互に斜めにずれた状態で、凹部２６ｂが形成されている。なお、凹部２６ｂにおいては、配線電極２６の側辺と、その側辺に接する凹部２６ｂの一辺との交差角度が７５度になっているが、この交差角度には限らず、たとえば、第１実施形態の凹部６ｂと同様に９０度であっても良い。 The surface acoustic wave element 21 includes a piezoelectric substrate 24. An IDT electrode 25 and a pair of wiring electrodes 26 connected to the IDT electrode 25 are formed on one main surface of the piezoelectric substrate 24. The wiring electrode 26 has a connection electrode 26 a at the end opposite to the end connected to the IDT electrode 25. In addition, the wiring electrode 26 is formed with recesses 26b on opposite sides thereof in a state of being obliquely displaced from each other. In the recess 26b, the intersection angle between the side of the wiring electrode 26 and one side of the recess 26b in contact with the side is 75 degrees. However, the present invention is not limited to this intersection angle. 90 degree | times may be sufficient like the recessed part 6b of a form.
　本実施形態においては、配線電極２６の対向する両側辺に、それぞれ、相互に斜めにずれた状態で凹部２６ｂが形成されている。すなわち、上述した第１実施形態（図１、図２参照）のように、配線電極６の対向する両側辺に、それぞれ、対向して凹部６ｂが形成されたものではない。 In the present embodiment, the concave portions 26b are formed on both opposing sides of the wiring electrode 26 so as to be obliquely displaced from each other. That is, unlike the above-described first embodiment (see FIGS. 1 and 2), the opposing recesses 6b are not formed on both opposing sides of the wiring electrode 6, respectively.
　第１実施形態のように、配線電極６に１対の凹部６ｂを対向して形成すると、配線電極６が部分的に狭くなってしまい、配線抵抗が大きくなってしまう場合がある。これに対し、本実施形態においては、配線電極２６に１対の凹部２６ｂが斜めにずれた状態で形成されているため、配線抵抗の増加を抑制することができる。 As in the first embodiment, when the pair of recesses 6b are formed opposite to the wiring electrode 6, the wiring electrode 6 may be partially narrowed and the wiring resistance may be increased. On the other hand, in the present embodiment, since the pair of recesses 26b are formed in the wiring electrode 26 in a state of being obliquely displaced, an increase in wiring resistance can be suppressed.
　［第４実施形態］
　本発明の第４実施形態にかかる弾性表面波デバイス４００は、上述した第１実施形態にかかる弾性表面波デバイス１００（図１参照）の、弾性表面波素子１のみを、別の弾性表面波素子３１に置き換えた。他の構成については、弾性表面波デバイス１００と同じである。 [Fourth Embodiment]
A surface acoustic wave device 400 according to the fourth embodiment of the present invention is different from the surface acoustic wave device 100 according to the first embodiment described above (see FIG. 1) only in the surface acoustic wave element 1. Replaced with 31. Other configurations are the same as those of the surface acoustic wave device 100.
　図６に、弾性表面波デバイス４００に使用された弾性表面波素子３１を示す。ただし、図６は、弾性表面波素子３１の、ＩＤＴ電極３５が形成された側の主面を示す平面図である。 FIG. 6 shows the surface acoustic wave element 31 used in the surface acoustic wave device 400. However, FIG. 6 is a plan view showing the main surface of the surface acoustic wave element 31 on the side where the IDT electrode 35 is formed.
　弾性表面波素子３１は、圧電基板３４を備える。圧電基板３４の一方の主面には、ＩＤＴ電極３５と、ＩＤＴ電極３５に接続された１対の配線電極３６が形成されている。配線電極３６は、ＩＤＴ電極３５に接続された端部と反対側の端部に接続電極３６ａを有する。また、配線電極３６には、対向する両側辺に、それぞれ、２個ずつ、凹部３６ｂが形成されている。 The surface acoustic wave element 31 includes a piezoelectric substrate 34. An IDT electrode 35 and a pair of wiring electrodes 36 connected to the IDT electrode 35 are formed on one main surface of the piezoelectric substrate 34. The wiring electrode 36 has a connection electrode 36 a at the end opposite to the end connected to the IDT electrode 35. In addition, the wiring electrode 36 is formed with two recesses 36b on each opposite side.
　本実施形態においては、１つの側辺に２個の凹部３６ｂが形成されているため、弾性表面波素子３１を実装した実装基板上に封止樹脂を設ける際に、配線電極３６の側辺に沿って流動した樹脂を、仮に１つ目の凹部３６ｂで停止させることができなくても、２つ目の凹部３６ｂで停止させることができる。 In the present embodiment, since two concave portions 36b are formed on one side, when the sealing resin is provided on the mounting substrate on which the surface acoustic wave element 31 is mounted, the side of the wiring electrode 36 is provided. Even if the resin that has flowed along can not be stopped at the first recess 36b, it can be stopped at the second recess 36b.
　第４実施形態の弾性表面波デバイス４００においては、樹脂のＩＤＴ電極３５への到達を、より確実に防止することができる。 In the surface acoustic wave device 400 of the fourth embodiment, it is possible to more reliably prevent the resin from reaching the IDT electrode 35.
　［第５実施形態］
　図７に、本発明の第５実施形態にかかる弾性表面波デバイス５００を示す。ただし、図７は、弾性表面波デバイス５００の断面図である。 [Fifth Embodiment]
FIG. 7 shows a surface acoustic wave device 500 according to a fifth embodiment of the present invention. However, FIG. 7 is a cross-sectional view of the surface acoustic wave device 500.
　弾性表面波デバイス５００は、１個の実装基板４２に、２個の弾性表面波素子４１をフリップチップ実装し、弾性表面波素子４１上に封止樹脂４３を設けた構造からなる。本実施形態においては、弾性表面波素子４１はフィルタであり、弾性表面波デバイス５００はデュプレクサを構成している。そして、図示しないが、弾性表面波素子４１の配線電極には、本発明の特徴的な要素である凹部が形成されている。 The surface acoustic wave device 500 has a structure in which two surface acoustic wave elements 41 are flip-chip mounted on one mounting substrate 42 and a sealing resin 43 is provided on the surface acoustic wave element 41. In the present embodiment, the surface acoustic wave element 41 is a filter, and the surface acoustic wave device 500 constitutes a duplexer. Although not shown, the wiring electrode of the surface acoustic wave element 41 is formed with a recess that is a characteristic element of the present invention.
　このように、本発明は、１個の実装基板に複数個の弾性表面波素子を実装した弾性表面波デバイス５００として構成することができる。 As described above, the present invention can be configured as a surface acoustic wave device 500 in which a plurality of surface acoustic wave elements are mounted on one mounting substrate.
１、１１、２１、３１、４１：弾性表面波デバイス
２、４２：実装基板
３、４３：封止樹脂
４、１４、２４、３４：圧電基板
５、１５、２５、３５：ＩＤＴ電極
６、１６、２６、３６： 配線電極
６ａ、１６ａ、２６ａ、３６ａ：接続電極
６ｂ、１６ｂ、２６ｂ、３６ｂ：凹部
７：ランド電極
８：バンプ
９：空間 1, 11, 21, 31, 41: surface acoustic wave device 2, 42: mounting substrate 3, 43: sealing resin 4, 14, 24, 34: piezoelectric substrate 5, 15, 25, 35: IDT electrodes 6, 16 , 26, 36: wiring electrodes 6a, 16a, 26a, 36a: connection electrodes 6b, 16b, 26b, 36b: recesses 7: land electrodes 8: bumps 9: spaces

Claims (6)

  1. 　一方の主面に、ランド電極が形成された実装基板と、
    　圧電基板上に、少なくとも１個のＩＤＴ電極と、当該ＩＤＴ電極に接続された配線電極とが形成された弾性表面波素子とを備え、
    　前記弾性表面波素子は、前記実装基板のランド電極に前記配線電極の所定の部分が接続されて、前記実装基板にフリップチップ実装され、さらに、前記実装基板上に設けられた封止樹脂によって覆われており、
    　前記弾性表面波素子の前記配線電極に、当該配線電極の側辺から内部に向かって、凹部が形成されていることを特徴とする弾性表面波デバイス。     A mounting substrate having land electrodes formed on one main surface;
    A surface acoustic wave element in which at least one IDT electrode and a wiring electrode connected to the IDT electrode are formed on a piezoelectric substrate,
    The surface acoustic wave element has a predetermined portion of the wiring electrode connected to a land electrode of the mounting substrate, is flip-chip mounted on the mounting substrate, and is covered with a sealing resin provided on the mounting substrate. And
    A surface acoustic wave device, wherein a concave portion is formed in the wiring electrode of the surface acoustic wave element from the side of the wiring electrode toward the inside.
  2. 　前記凹部が形成された前記配線電極の側辺と、当該側辺に接する前記凹部の一辺との交差角度が、９０度であることを特徴とする、請求項１に記載された弾性表面波デバイス。 2. The surface acoustic wave device according to claim 1, wherein an angle of intersection between a side of the wiring electrode in which the recess is formed and one side of the recess in contact with the side is 90 degrees. .
  3. 　前記凹部が形成された前記配線電極の側辺と、当該側辺に接する前記凹部の一辺との交差角度が、９０度よりも小さいことを特徴とする、請求項１に記載された弾性表面波デバイス。 2. The surface acoustic wave according to claim 1, wherein an angle of intersection between a side of the wiring electrode in which the recess is formed and one side of the recess in contact with the side is smaller than 90 degrees. device.
  4. 　前記凹部が、前記配線電極の対向する両側辺に、それぞれ、対向して形成されていることを特徴とする、請求項１ないし３のいずれか１項に記載された弾性表面波デバイス。 The surface acoustic wave device according to any one of claims 1 to 3, wherein the recesses are formed to face each other on opposite sides of the wiring electrode.
  5. 　前記凹部が、前記配線電極の対向する両側辺に、それぞれ、相互に斜めにずれた状態で形成されていることを特徴とする、請求項１ないし３のいずれか１項に記載された弾性表面波デバイス。 The elastic surface according to any one of claims 1 to 3, wherein the recesses are formed on opposite sides of the wiring electrode so as to be obliquely displaced from each other. Wave device.
  6. 　前記凹部が、前記配線電極の１つの側辺に、複数個形成されていることを特徴とする、請求項１ないし５のいずれか１項に記載された弾性表面波デバイス。 The surface acoustic wave device according to any one of claims 1 to 5, wherein a plurality of the recesses are formed on one side of the wiring electrode.
PCT/JP2011/067256 2010-08-10 2011-07-28 Surface acoustic wave device WO2012020649A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077659A (en) * 1999-09-03 2001-03-23 Murata Mfg Co Ltd Surface acoustic wave device
JP2004112748A (en) * 2002-07-24 2004-04-08 Murata Mfg Co Ltd Surface acoustic wave apparatus and manufacturing method therefor
JP2007124529A (en) * 2005-10-31 2007-05-17 Kyocera Corp Surface acoustic wave element and method of manufacturing same
JP2007243915A (en) * 2005-11-02 2007-09-20 Matsushita Electric Ind Co Ltd Electronic component package
JP2010098385A (en) * 2008-10-14 2010-04-30 Murata Mfg Co Ltd Acoustic wave apparatus
JP2010141939A (en) * 2010-03-23 2010-06-24 Kyocera Corp Surface acoustic wave device and communication device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077659A (en) * 1999-09-03 2001-03-23 Murata Mfg Co Ltd Surface acoustic wave device
JP2004112748A (en) * 2002-07-24 2004-04-08 Murata Mfg Co Ltd Surface acoustic wave apparatus and manufacturing method therefor
JP2007124529A (en) * 2005-10-31 2007-05-17 Kyocera Corp Surface acoustic wave element and method of manufacturing same
JP2007243915A (en) * 2005-11-02 2007-09-20 Matsushita Electric Ind Co Ltd Electronic component package
JP2010098385A (en) * 2008-10-14 2010-04-30 Murata Mfg Co Ltd Acoustic wave apparatus
JP2010141939A (en) * 2010-03-23 2010-06-24 Kyocera Corp Surface acoustic wave device and communication device

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