WO2012014299A1

WO2012014299A1 - Method for producing mold and base plate for mold

Info

Publication number: WO2012014299A1
Application number: PCT/JP2010/062725
Authority: WO
Inventors: 加園　修; 孝幸糟谷
Original assignee: パイオニア株式会社
Priority date: 2010-07-28
Filing date: 2010-07-28
Publication date: 2012-02-02

Abstract

Disclosed is a method for producing a mold having an imprint pattern area to be transferred to a transfer receiving body by a transfer device, wherein the method is provided with a forming step for forming the imprint pattern area as well as a mark for shape processing of a base plate on the base plate of the mold, and a processing step for processing the base plate to a predetermined shape on the basis of the mark on the base plate.

Description

Mold manufacturing method and mold substrate

The present invention relates to a manufacturing method for manufacturing a mold and a mold substrate.

When transferring the uneven imprint pattern formed on the mold to the transfer substrate by the transfer device, align the mold and the transfer substrate so that the imprint pattern is transferred to the desired position on the transfer substrate. There is a need to. In general, there are a method of aligning the transfer substrate with a mark formed on the mold and a method of aligning the transfer substrate and the shape of the mold. In the former method, the position adjustment is performed so that the mark formed on the mold is positioned at a predetermined point on the substrate to be transferred. Patent Documents 1 to 3 disclose that such a mark is formed together with an imprint pattern when a mold is manufactured. On the other hand, in the latter method, each of the substrate to be transferred and the mold is aligned with each other, for example, in the shape of a central hole or the like, which is disclosed in

Patent Documents

4 and 5.

JP 2009-208240 A JP 2007-230229 A JP-A-2-249908 JP 2009-83195A JP 2005-529436 Gazette

However, in the latter method, it is necessary to form an imprint pattern at an accurate position with respect to the shape of the mold. Even if the alignment between the mold and the substrate to be transferred is accurately performed, if the imprint pattern is formed out of the desired position on the mold, as a result, the transferred imprint pattern is transferred. There is a problem that the image is not transferred to a desired position on the substrate.

Therefore, the problem to be solved by the present invention is to provide a mold manufacturing method and a mold substrate capable of arranging an imprint pattern on the mold with high accuracy with respect to the shape of the mold. It is.

The mold manufacturing method of the invention according to claim 1 is a mold manufacturing method having an imprint pattern region to be transferred to a transfer object by a transfer device, together with the imprint pattern region on the substrate of the mold, A forming step of forming a mark for processing the shape of the substrate and a processing step of processing the substrate into a predetermined shape based on the mark of the substrate are provided.

A mold substrate according to a tenth aspect of the present invention is a mold substrate processed into a mold having a predetermined shape having an imprint pattern region to be transferred to a transfer object by a transfer device, and the imprint pattern region A mark for processing a part of the substrate into the predetermined shape is formed.

A mold manufacturing method according to a sixteenth aspect of the present invention is a mold manufacturing method used in a transfer device for transferring a concavo-convex pattern onto both surfaces of a transfer object, the imprint pattern and the shape of the mold substrate. A patterning process corresponding to a mark for processing is performed on the resist substrate by using the same drawing apparatus to draw a pattern on the resist, and an etching process is performed based on the drawing pattern drawn on the resist. Based on the concavo-convex pattern forming step for forming the concavo-convex structure on the mold substrate and the concavo-convex pattern corresponding to the mark formed on the mold substrate, the mold substrate is processed into a predetermined shape using a processing apparatus. And a processing step to be performed.

It is a figure which shows the manufacturing method of a mold as an Example of this invention. It is a top view which shows the mold manufactured by the manufacturing method of FIG. It is a top view which shows an example of the pattern area | region and mark part on a board | substrate, and a top view which shows the board | substrate after a process process. It is a flowchart which shows the operation | movement in a glass processing machine. It is the top view which shows the other example of the pattern area | region and mark part on a board | substrate, and the top view which shows the board | substrate after a process process. It is the top view which shows the other example of the pattern area | region and mark part on a board | substrate, and the top view which shows the board | substrate after a process process. It is the top view which shows the other example of the pattern area | region and mark part on a board | substrate, and the top view which shows the board | substrate after a process process. It is the top view which shows the other example of the pattern area | region and mark part on a board | substrate, and the top view which shows the board | substrate after a process process. It is the top view which shows the other example of the pattern area | region and mark part on a board | substrate, and the top view which shows the board | substrate after a process process. It is a figure which shows the mark which exists on a mold for position alignment with the to-be-transferred substrate at the time of imprint. It is a figure which shows the manufacturing method of a mold as another Example of this invention. It is a figure which shows the manufacturing method of a mold as another Example of this invention. It is a figure which shows the manufacturing method of a mold as another Example of this invention. 3 is a flowchart showing a nano-imprint operation of a transfer device when two imprint patterns are transferred onto a transfer substrate using two molds shown in FIG. 2 as a set. It is a figure which shows the state of the mold press step of FIG.

According to the mold manufacturing method of the invention according to claims 1 and 16 and the mold substrate of the invention according to claim 10, the substrate is processed based on the mark of the substrate. The position of the imprint pattern area with respect to can be arranged with high accuracy. Therefore, the imprint pattern area of the mold can be transferred to a desired position on the transfer substrate simply by aligning the transfer substrate with respect to the shape of the mold in the transfer device.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

1 (a) to 1 (g) show the mold manufacturing method of the present invention. Before explaining this manufacturing method, a mold manufactured by the manufacturing method shown in FIGS. 1 (a) to 1 (g) has a circular center hole penetrating the center portion as shown by reference numeral 1 in FIG. 2 and the outer shape linear portion 3 and the outer arc portion 4 are alternately formed at three locations. In this embodiment, the outer straight line portions 3 are formed at the same size at equal intervals of 120 degrees with respect to the center point of the mold 1, and the outer arc portions 4 are also formed at the same size at equal intervals of 120 degrees. An annular imprint pattern region 5 is formed on one surface of the mold 1, which is, for example, a region in which a servo data pattern or a data track pattern of a magnetic disk is formed as an uneven imprint pattern. . The other surface of the mold 1 is a flat surface processed to a required flatness by the transfer device. Further, the center hole 2 is located on the inner peripheral side from the imprint pattern region 5, and the circle center point of the center hole 2 is equal to the center point of the annular imprint pattern region 5. Further, the outer arc portion 4 is located at the same distance from the center point. The mold having the shape shown in FIG. 2 is used in a transfer device that simultaneously transfers a concavo-convex pattern onto both surfaces of a transfer substrate as described in, for example, International Application No. PCT / JP2009 / 051473 filed by the applicant of the present invention. It is a mold.

1A to 1G, the manufacturing method of the mold 1 will be described. First, as shown in FIG. 1A, a disk in which a hard mask 11 and a resist layer 12 are laminated on the surface of a quartz substrate. A shaped substrate (substrate before processing) 10 is prepared. This pre-processed substrate may be any shape such as a disk shape, a rectangular shape, or a substrate with a central hole, as long as it is larger than the mold shape formed by processing described later. If desired, a substrate that is larger than the mold shape is selected from the standard substrate shape and substrate dimensions, and a stable and inexpensive substrate can be used. More desirably, the shape is optimal for an electron beam drawing apparatus. For example, an Xθ-type rotating electron beam lithography apparatus that performs electron beam exposure while rotating the substrate before processing (for example, an electron beam lithography apparatus described in International Publication WO2008 / 1230331 filed by the applicant of the present invention). For example, a disk-shaped pre-processed substrate is preferable, and a rectangular pre-processed substrate is preferable in the case of an XY-type electron beam drawing apparatus that performs electron beam exposure while moving the pre-processed substrate in two directions of the X axis and the Y axis. Here, the explanation is given as a disk-shaped pre-process substrate without a central hole. The hard mask 11 is exclusively made of metal such as chromium (Cr) and is pre-deposited on a quartz substrate. An electron beam (EB) resist is used as the resist layer 12 formed on the hard mask 11. An electron beam resist is spin-coated on the substrate on which the hard mask 11 is formed to form a resist layer 12. The resist layer 12 on the substrate 10 is irradiated with an electron beam from above by an electron beam lithography apparatus (not shown), the resist layer 12 is exposed, and development is performed after exposure (electron beam lithography and development process). ). Drawing data in which pattern shape data of a concavo-convex pattern to be drawn (a pattern area 13 and a mark portion 14 to be described later) is processed in advance for an electron beam drawing apparatus is created. The beam drawing apparatus is driven and the electron beam irradiation is executed. The portion irradiated with the electron beam is formed as a latent image on the resist layer 12 on the substrate 10. That is, a latent image of a pattern corresponding to the pattern region 13 and a pattern corresponding to the mark portion 14 is formed on the resist in a batch process by the same electron beam drawing apparatus.

After the drawn substrate 10 is taken out from the electron beam drawing apparatus, the substrate 10 is subjected to development processing. As a result of this development processing, as shown in FIG. 1B, the latent image portion of the resist layer 12 is dissolved and removed, and the surface of the hard mask 11 is exposed. FIG. 3A is a diagram schematically showing a pattern drawn on the substrate 10. The concavo-convex pattern drawn on the resist layer 12 includes a pattern region 13 and a mark portion 14 as shown in FIG. The pattern area 13 is a portion that should eventually become the imprint pattern area 5 of the mold 1. For example, a concavo-convex pattern of the resist 12 corresponding to a servo data pattern or a data track pattern of a magnetic disk is formed. It is an area. The pattern is a combination of the mark portion 14, the curved line 15, and the gap 16, and is drawn so that the curved line 15 and the gap 16 appear alternately on the same radius. This mark portion 14 is located on the outer peripheral side avoiding the pattern region 13 (of course, depending on the final mold shape, there may be a mark portion on the inner peripheral side). The substrate 10 exists in a portion to be removed by processing the substrate 10 into the shape shown in FIG. The mark portion 14 is represented as one large dent in FIG. 1 (b) and as a line in FIG. 3 (a). As long as the shape can be recognized by a camera, which will be described later, it may be a region formed by collecting finer shapes such as a line-and-space shape and a set of dots instead of a linear shape. In the example shown in FIG. 3A, the mark portion 14 is composed of three curved lines 15 having the same length drawn by an electron beam on the same distance in the radial direction from the center point of the substrate 10. A gap 16 is provided. That is, three discontinuous portions on one circle are the gap 16. Further, the mark portion 14 is used as a mark for aligning the machining position in the machining process. In the case of the example of FIG. 3A, the mark is, for example, one end of each curved line 15 or the gap 16.

Next, as shown in FIG. 1C, hard mask etching is performed on the hard mask 11 (hard mask etching process). The hard mask 11 is etched in the pattern region 13 and the mark portion 14 of the resist layer 12 where the hard mask 11 is exposed. Therefore, the surface of the substrate 10 is exposed at the pattern region 13 and the mark portion 14.

Further, as shown in FIG. 1 (d), substrate etching is performed on the substrate 10 (substrate etching step). The quartz substrate of the substrate 10 is etched at a portion of the hard mask 11 where the pattern region 13 and the mark portion 14 are exposed. As a result, a concave portion is formed in the quartz substrate of the substrate 10 at the pattern portion 13 and the mark portion 14. Thereafter, the remaining resist layer 12 is removed as shown in FIG. 1E (resist removal step).

Next, as shown in FIG. 1 (f), a processing step of the substrate 10 that has been subjected to substrate etching is performed. This processing step is executed by a processing machine or a processing apparatus (not shown). In the processing machine, as shown in FIG. 4, first, the substrate 10 after the resist removal process is set (step S11). A mark (three gaps 16 in the case of FIG. 3A) of the mark portion 14 is detected by a camera (not shown) provided in the processing machine, and its coordinates are measured (step S12). A machining position is calculated with reference to the coordinates of the gap 16 (step S13: machining position calculation step). That is, since data indicating the coordinate relationship between the machining position and the mark is stored in advance in the controller (not shown) of the processing machine, the coordinate position of the three marks is detected in step S12, so that step S13 is performed. Then, based on the stored data, for example, a straight line equation for moving a blade (end mill or the like) for processing the substrate is calculated.

After execution of step S13, unnecessary portions are removed according to the calculated machining position (step S14). In step S14, the substrate 10 is processed by the processing machine so that the center hole 2 of the mold 1 is formed, and the outer straight line portion 3 and the outer arc portion 4 are further formed. That is, by removing a plurality of portions having marks on the substrate 10 in a straight line so that the extended lines of the outer straight portions 3 intersect each other on the surface of the substrate 10, the portions having the marks are removed from the main body portion of the mold. To be done. When the pattern region 13 and the mark portion 14 are formed as shown in FIG. 3A, the substrate 10 in which the center hole is formed according to the processing position and the outer peripheral region is removed by this processing step is shown. As shown in 3 (b). A broken line A in FIG. 3B indicates a mark portion 14 existing in a portion removed by processing the substrate 10. In the example of FIG. 3B, for example, cutting is used as a processing method.

After the processing step, the hard mask 11 remaining on the substrate 10 is removed as shown in FIG. 1 (g) (hard mask removing step). As a result, the concavo-convex pattern (pattern region 13) of the resist formed by electron beam drawing is finally converted to the imprint pattern region 5, and in addition, the imprint pattern region 5 is arranged at an accurate position with respect to the shape. The mold 1 having the shape shown in FIG. 2 is completed.

FIG. 5A shows a mark portion 14 together with a pattern region 13 as another embodiment of the present invention. In the example of FIG. 5A, the mark portion 14 is located outside the annular pattern region 13. The mark part 14 includes three points 17 located on the same distance in the radial direction from the center point of the substrate 10. Three points 17 are drawn and formed as circles at intervals of 120 degrees by electron beam irradiation.

The three points 17 are detected as marks of the mark portion 14 by the camera provided in the processing machine in the above step S12. In subsequent step S13, a processing position is set with the mark as a position reference. In step S14, when the substrate 10 is removed together with the hard mask 11 in accordance with the processing position, a substrate shape is obtained as shown in FIG. In the mark portion 14 composed of the three points 17, unnecessary portions of the substrate 10 for forming the outer straight line portion 3 and the outer arc portion 4 are removed during processing. That is, the mark portion 14 is formed at a position that is removed by removing the outer peripheral portion of the pattern region 13 linearly in order to form the outer straight portion 3. A broken line B in FIG. 5B indicates three points 17 existing in a portion removed by processing the substrate 10.

FIG. 6A further shows a mark portion 14 together with a pattern region 13 as another embodiment of the present invention. In the example of FIG. 6A, the mark portion 14 is located inside the annular pattern region 13. The mark portion 14 includes a circle 18 about the center point of the substrate 10 and three lines 19 extending in the radial direction intersecting the circle. The circle 18 and the three lines 19 are drawn and formed by electron beam irradiation. The three lines 19 are arranged at intervals of 120 degrees.

The intersection of the circle 18 and the three lines 19 is detected as a mark of the mark portion 14 by the camera provided in the processing machine in the above step S12. In step S13, coordinates for processing are set with the mark as a position reference. In step S14, when unnecessary portions of the substrate 10 are removed according to the processing coordinates, the substrate shape is changed as shown in FIG. As a result, the mark portion 14 including the circle 18 and the three lines 19 is removed by forming the center hole 2. A broken line C in FIG. 6B shows a circle 18 and three lines 19 existing in a portion removed by processing the substrate 10.

FIG. 7A further shows a mark portion 14 together with a pattern region 13 as another embodiment of the present invention. In the example of FIG. 7A, the mark portion 14 is located inside the annular pattern region 13. The mark portion 14 is composed of three small circles 20 located on the same distance in the radial direction from the center point of the substrate 10. Three small circles 20 are drawn and formed at intervals of 120 degrees by electron beam irradiation.

The three small circles 20 are detected as marks of the mark portion 14 by the camera provided in the processing machine in the above step S12. In the subsequent step S13, coordinates for processing are set with the mark as a position reference. In step S14, when unnecessary portions of the substrate 10 are removed according to the processing coordinates, the substrate shape is changed as shown in FIG. As a result, the mark portion 14 composed of the three small circles 20 is removed by forming the center hole 2. A broken line D in FIG. 7B shows three small circles 20 existing in a portion removed by processing the substrate 10.

FIG. 8A shows a mark portion 14 together with a pattern region 13 as another embodiment of the present invention. In the example of FIG. 8A, the mark portion 14 is located outside the annular pattern region 13. The mark portion 14 includes three cross marks 21 located on the same distance in the radial direction from the center point of the substrate 10. Three cross marks 21 are drawn and formed at intervals of 120 degrees by electron beam irradiation.

The three cross marks 21 are detected as marks of the mark part 14 by the camera provided in the processing machine in the above step S12. Then, in step S13, coordinates for processing are set using the mark as a position reference, and in step S14, when unnecessary portions of the substrate 10 are removed according to the processing coordinates, the substrate shape is changed as shown in FIG. The obtained mark portion 14 composed of three cross marks 21 is removed when the substrate 10 is contoured to form the contour straight line portion 3 and the contour arc portion 4. A broken line E in FIG. 8B indicates three cross marks 21 existing in a portion removed by processing the substrate 10.

The three crosses 21 shown in FIG. 8 (a) are located outside the distance corresponding to the outer arc portion 4 from the center point, but as shown in FIG. 9 (a), the outer shape in the radial direction from the center point. Three cross marks 22 may be drawn in a range that is inside the distance corresponding to the formation position of the arc portion 4 and outside the distance corresponding to the formation position of the outer straight line portion 3. That is, the cross mark 21 is formed at a position on the substrate on the outer peripheral side of the outer shape straight line portion 3 to be the outer periphery of the completed mold and on the inner peripheral side of the outer shape arc portion 4 to be the outer periphery of the completed mold. The In the example of the completed mold shape in FIG. 9 (b), although not shown in FIG. 9 (a), the outer periphery of the finished mold and the outer periphery of the finished mold, and the outer periphery of the finished mold, There are three areas on the substrate 10 that satisfy the condition of the inner circumference side of the outer arcuate portion 4. A cross mark 21 is drawn at each of the three locations, and an uneven pattern corresponding to the cross mark 21 is formed on the substrate 10 through an etching process. When an Xθ-type electron beam drawing machine is used, drawing at a position closer to the center can be completed in a shorter time, and the entire drawing time can be completed in a shorter time. Since the three cross marks 22 are located in unnecessary portions of the substrate 10, they are removed simultaneously with the removal of the unnecessary portions in step S14. A broken line F in FIG. 9B indicates three cross marks 22 removed by processing the substrate 10.

As described above, according to the present invention, the processing position is determined by the mark of the mark portion formed on the substrate before processing of the mold, and the unnecessary portion of the substrate is removed and the shape is formed in the processing step. The imprint pattern region can be formed at an accurate position with respect to the shape of the mold. Therefore, there is no requirement for the pattern area formation position accuracy with respect to the shape of the substrate in the pattern drawing stage by electron beam irradiation, and the imprint pattern of the mold is transferred to the transfer substrate in the transfer device. For example, by aligning the center hole of the transfer substrate with respect to the center hole of the mold, the imprint pattern of the mold can be brought to the desired position of the transfer substrate. Can be transferred.

At the time of imprinting in which the imprint pattern of the mold is transferred to the transfer substrate in the transfer device, for example, as shown in FIG. 10, the mark 32 on the transparent mold 31 and the mark 34 on the transfer substrate 33 are used, for example, using a camera. A method for adjusting the position by optical observation is known. That is, there is an example in which a mark (a so-called alignment mark) formed on the mold is used for the purpose of positioning the transparent mold and the transfer substrate during imprinting.

However, since the mold itself manufactured by the manufacturing method of the present invention does not have a mark, the mark existing on the substrate before the processing step is used for alignment at the time of imprinting as shown in FIG. It is clear that it is different from the landmarks present in Moreover, according to the manufacturing method of this invention, there also exists an advantage that it is not necessary to use a transparent substrate especially for mold manufacture.

Furthermore, according to the present invention, even when a mold having various shapes is manufactured, a cassette conforming to the substrate outline used for pattern drawing in the electron beam drawing apparatus, or a substrate outline used in the etching apparatus in the etching process. Since the jig used in the manufacturing stage of the combined cassette or the like is only required to match the shape of the substrate before processing, there is an advantage that it is not necessary to align such a jig according to various shapes of the mold.

Further, according to the present invention, there is an advantage that it is not necessary to perform electron beam drawing at an accurate position according to the shape of the substrate before processing.

As shown in FIGS. 6 (a) and 7 (a), when the mark portion 14 is located on the inner peripheral side of the pattern region 13 in the substrate 10, FIGS. 3 (a), 5 (a), and FIG. 8 (a) and FIG. 9 (a), when the marking speed is constant compared to the case where the mark portion 14 is positioned on the outer peripheral side of the pattern region 13 in the substrate 10, the mark portion 14 formed by the electron beam drawing apparatus is used. Drawing takes a short time. In addition, the smaller the size in the radial direction, the shorter the drawing time of the mark portion 14 is. 3A, FIG. 5A, FIG. 8A, and FIG. 9A, when the mark portion 14 is located on the outer peripheral side of the pattern region 13 in the substrate 10, FIG. As shown in FIGS. 7A and 7A, it is possible to specify the processing position of the substrate 10 with higher accuracy than in the case where the mark portion 14 is located on the inner peripheral side of the pattern region 13 in the substrate 10. There is an advantage that it can be done. Depending on the application, you can select one from the balance between short-time drawing and fine machining position accuracy.
FIGS. 11A to 11G show a mold manufacturing method using a lift-off method as another embodiment of the present invention. The mold manufactured by this mold manufacturing method is the mold 1 having the shape shown in FIG.

The mold manufacturing method will be described with reference to FIGS. 11A to 11G. First, as shown in FIG. 11A, a disk-shaped quartz substrate 50 having a resist layer 52 formed on the surface in a planar shape is prepared. Is done. As the resist layer 52, an electron beam (EB) resist is used. The resist layer 52 on the substrate 50 is irradiated with an electron beam from above by an electron beam lithography apparatus (not shown), the resist layer 52 is exposed, and development is performed after exposure (electron beam lithography and development process). ). The electron beam drawing apparatus controls the irradiation position of the electron beam with respect to the center point of the substrate 50 by the angle and the distance in the radial direction. It is executed from the side toward the outer peripheral side. The portion irradiated with the electron beam is formed as a latent image on the resist layer 52 on the substrate 50. After such a drawn substrate 50 is taken out from the electron beam drawing apparatus, the substrate 50 is subjected to development processing. As a result of this development processing, as shown in FIG. 11B, the latent image portion of the resist layer 52 is dissolved and removed, and the surface of the substrate 50 is exposed, so that an uneven pattern is formed. As shown in FIG. 3A, the concavo-convex pattern includes a pattern region 13 and a mark portion 14. The mark of the mark part 14 may be the one shown in FIG. 5A, FIG. 6A, FIG. 7A, FIG. 8A, or FIG.

Next, as shown in FIG. 11 (c), when a hard mask film 51 made of chromium (Cr) or the like is formed, 51a formed on the

substrate

50 and 51b formed on the resist 52 are formed. Then, the film is formed (hard mask film forming step). Then, the resist layer 52 is dissolved and rubbed with a solvent or the like, and at the same time, the hard mask film 52b on the resist 52 is removed, and a hard mask pattern 71a as shown in FIG. 11D is produced (lift-off process). As a result, the surface of the substrate 50 is exposed except for the portion where the hard mask film 51 is formed. Further, the substrate 50 is subjected to substrate etching, and as shown in FIG. 11E, the unevenness is reversed (substrate etching process).

Next, as shown in FIG. 11 (f), a processing step of the quartz substrate 50 is performed. This processing step is executed by the processing machine as shown in FIG. That is, when the substrate 50 after the substrate etching process is set in step S11, in step S12, a camera (FIG. 3) is provided with the marks of the mark portions 14 (three gaps 16 in the case of FIG. 3A). In step S13, the cutting position is set using the mark as a position reference, and in step S14, the substrate 50 is cut according to the cutting position.

After the processing step, the hard mask film 51 remaining on the substrate 50 is removed as shown in FIG. 11G (hard mask removing step). As a result, the mold 1 having the shape shown in FIG. 2 is completed.

In addition, as a pattern formation method on the resist layer, a pattern formation method other than electron beam drawing using an Xθ-type electron beam drawing apparatus can be used. For example, a pattern forming method using an Xθ type laser drawing apparatus, a pattern forming method using an XY type electron beam drawing apparatus or a laser drawing apparatus, a pattern forming method using an interference exposure technique, or a classical printing technique is used. In addition, there is a pattern forming method such as a pattern forming method using a self-organization method with a pattern produced by using the pattern forming method as a guide.

12 (a) to 12 (h) show a mold manufacturing method for forming a concavo-convex pattern on a resist layer by imprinting instead of electron beam drawing as another embodiment of the present invention. The mold manufactured by this mold manufacturing method is the mold 1 having the shape shown in FIG. The imprint referred to here is not limited to either UV thermal method, and any method can be used.

The manufacturing method of the mold 1 will be described with reference to FIGS. 12 (a) to 12 (h). First, as shown in FIG. 12 (a), a disk-shaped quartz having a hard mask 61 and a resist layer 62 laminated on the surface. A substrate (substrate before processing) 60 is prepared. The hard mask 61 is exclusively made of metal such as chromium (Cr), and the resist layer 62 is a nanoimprint resist. A stamper (mold) 63 is pressed in one direction of an arrow 64 from above with respect to the resist layer 62 on the substrate 60 by a nanoimprint transfer device (not shown), and the uneven pattern formed on the stamper 63 is a resist pattern. Transferred to the layer 62 (transfer process). The concave / convex pattern formed on the stamper 63 corresponds to the pattern region 13 and the mark portion 14 described above. By this transfer process, a concavo-convex pattern is reversed and formed on the resist layer 62 on the substrate 60.

In the resist layer 62 to which the concavo-convex pattern has been transferred, since the concave portion does not reach the hard mask 61, the resist layer 62 is etched (resist residual film layer etching step). As a result, as shown in FIG. 12C, the resist layer 62 becomes thinner as a whole, the remaining film layer portion of the recess is removed, and the corresponding hard mask 61 portion is exposed. A pattern region 13 in FIG. 12C is a portion that should finally become the imprint pattern region 5 of the mold 1. The mark portion 14 is located on the outer peripheral side or the inner peripheral side avoiding the pattern region 13, and exists in a portion that is finally removed by cutting the substrate 60 in a subsequent processing step.

Next, as shown in FIG. 12D, hard mask etching is performed on the hard mask 61 (hard mask etching step), and then the remaining resist layer 62 is formed as shown in FIG. It is removed (resist removal step). Next, a process for processing the quartz substrate 60 is performed as shown in FIG. After the processing step, the hard mask 61 remaining on the substrate 60 is removed as shown in FIG. 12 (h) (hard mask removing step). As a result, the mold 1 having the shape shown in FIG. 2 is completed. Each step of FIG. 12D to FIG. 12H is the same as the step shown in FIG. 1E to FIG. 1G, so detailed description thereof is omitted here.

13 (a) to 13 (h) show a mold manufacturing method using a lift-off method while forming a concavo-convex pattern on a resist layer by imprinting instead of electron beam drawing as another embodiment of the present invention. The mold manufactured by this mold manufacturing method is the mold 1 having the shape shown in FIG. The imprint referred to here is not limited to either UV thermal method, and any method can be used.

The mold manufacturing method will be described with reference to FIGS. 13 (a) to 13 (h). First, as shown in FIG. 13 (a), a disk-shaped quartz substrate 70 having a resist layer 72 formed in a planar shape on the surface is prepared. Is done. As the resist layer 72, a nanoimprint resist is used. A stamper (mold) 73 is pressed in one direction of an arrow 74 with respect to the resist layer 72 on the substrate 70 by a nanoimprint transfer device (not shown) from above, and the uneven pattern formed on the stamper 73 is a resist pattern. Transferred to the layer 72 (transfer process). The uneven pattern formed on the stamper 73 corresponds to the pattern region 13 and the mark portion 14 described above. By this transfer process, the concavo-convex pattern is reversed and formed on the resist layer 72 on the substrate 70.

In the resist layer 72 to which the concavo-convex pattern has been transferred, since the concave portion does not reach the substrate 70, the resist layer 72 is etched (resist residual film layer etching step). As a result, as shown in FIG. 13C, the resist layer 72 becomes thinner as a whole, the remaining film layer portion of the recess is removed, and the corresponding portion of the substrate 72 is exposed. The pattern area 13 in FIG. 13C is a portion that should finally become the imprint pattern area 5 of the mold 1. The mark portion 14 is located on the outer peripheral side or the inner peripheral side avoiding the pattern region 13 and is present in a portion that is finally removed by cutting the substrate 70 in the subsequent processing steps.

Next, as shown in FIG. 13D, when a hard mask film 71 made of chromium (Cr) or the like is formed, 71a formed on the

substrate

70 and 71b formed on the resist 72 are formed. Then, the film is formed (hard mask film forming step). Then, the resist layer 72 is dissolved and removed with a solvent or the like, and at the same time, the hard mask film 71b on the resist layer 72 is removed, and a hard mask pattern 71a as shown in FIG. (Lift-off process). Further, the substrate 70 is subjected to substrate etching, and as shown in FIG. 13 (f), the unevenness is inverted (substrate etching process). Next, a process for processing the quartz substrate 70 is performed as shown in FIG. After the processing step, the hard mask film 71 remaining on the substrate 70 is removed as shown in FIG. 13H (hard mask removing step). As a result, the mold 1 having the shape shown in FIG. 2 is completed.

Since the steps shown in FIGS. 13 (d) to 13 (h) are the same as those shown in FIGS. 11 (e) to 11 (g), detailed description thereof is omitted here.

Note that the positioning accuracy between the stamper 63 and the substrate 60 in the transfer process of FIG. Similarly, the positioning accuracy between the stamper 73 and the substrate 70 in the transfer process of FIG. There is no problem even if there is a deviation of several hundred μm. This is because the cutting position of the substrate is set in the processing step using the mark of the mark portion 14 as a position reference.

In each of the above-described embodiments, the mark of the mark portion 14 is 3, but the mark is not limited to this and may be 2 or more. Further, the interval between the mark portions 14 is not limited to 120 degrees, but is preferably equal.

Also, the mark portion 14 may be a contour line of the outer shape of the mold shape to be finally obtained. In this case, the mark portion 14 as the contour line of the mold shape is drawn together with the pattern region 13 by electron beam drawing. Then, in the processing step, outer shape processing may be performed along the contour line that is the mark portion, and a mold in which the contour line does not remain may be obtained. For example, as shown in FIG. 3B, a mold-shaped outer shape composed of the outer straight line portion 3 and the outer arc portion 4 is drawn as a contour line, etched, and then processed according to the contour line by a processing apparatus. Further, processing may be performed until the shape of FIG.

Further, as shown in FIG. 2, the mold manufactured by the mold manufacturing method of the present invention is provided with three outer straight portions 3 at equal intervals in the outer peripheral region, but the shape of the outer peripheral region is limited to this. Alternatively, other shapes such as a circle and a polygon may be used. Furthermore, as shown in FIG. 2, the number of the external straight line portions 3 is not limited to 3 when the external straight line portions 3 are provided. Further, in the above-described embodiment, the outer straight line portions 3 are formed at equal intervals of 120 degrees and the same size with respect to the center point of the mold 1, but the present invention is not limited to this.

FIG. 14 shows a nano-imprint operation of a transfer apparatus in which the imprint patterns are simultaneously pressed and transferred onto both surfaces of a transfer substrate using two outer shape molds shown in FIG. Is shown in a flowchart. FIGS. 15A and 15B show the pressure transfer state by the two molds. 15 (a) and 15 (b), the mold indicated by reference numeral 101 is an upper mold, the mold indicated by reference numeral 102 is a lower mold, and what is indicated by reference numeral 103 is This is a substrate to be transferred onto which the imprint pattern is transferred on both sides.

In the operation of the transfer device, first, a controller (not shown) of the transfer device transports the upper mold 101 onto the mold holding surface of the upper mold holding portion (not shown) by a transfer device (not shown) ( Step S1), after the conveyance, the upper mold 101 is fixed by holding the outer arc 101a of the upper mold 101 by the upper mold holding portion 109a (Step S2). By executing step S2, the upper mold gripping part 109a is driven, and the gripping part 109a fixes the upper mold 101 so as to be sandwiched from both sides at a predetermined upper holding position on the mold holding surface of the upper mold holding part. The predetermined upper holding position is a position where the upper center pin 130a can move without contacting the center hole of the upper mold 101.

Next, the controller causes the lower mold 102 to be transferred onto the mold holding surface of the lower mold holding unit by the transfer device (step S3), and after the transfer, the lower mold holding unit 109b causes the lower mold 102 to move. The lower mold 102 is fixed by gripping the outer arc portion 102a (step S4). By executing step S4, the lower mold gripping part 109b is driven, and the gripping part 109b is fixed so as to sandwich the lower mold 102 from both sides at a predetermined lower holding position on the mold holding surface of the lower mold holding part. To do. The predetermined lower holding position is a position where the lower center pin 130b can move without contacting the center hole of the lower mold 102, and is in a vertical relationship with the predetermined upper holding position.

Next, the controller transports the substrate 103 by the transport device described above and attaches it to the flange (not shown) at the tip of the lower center pin 130b (step S5). That is, at the position where the lower center pin 130b is inserted into the center hole of the substrate 103, the substrate 103 is moved along the tip convex portion (not shown) of the lower center pin 130b, whereby the lower center pin 130b. It is mounted on the flange of the front end portion. As a result, the substrate 103 can be aligned with the

molds

101 and 102 held and fixed as described above.

After mounting the substrate 103, the controller performs mold pressing (step S6). When the mold is pressed, the upper stage pin 130a is moved downward by moving the upper stage (not shown) of the transfer device downward, and the concave portion (not shown) at the tip thereof is moved to the lower center pin 130b. The upper mold 101 comes into contact with the upper transfer layer 103 a of the substrate 103 in combination with the above-mentioned tip convex portion.

When the upper stage and the upper center pin 130a move further downward together with the upper mold 101 and the substrate 103, the lower center pin 130b is pushed down, and the lower transfer layer 103b of the substrate 103 eventually comes into contact with the lower mold 102. . Since both surfaces of the substrate 103 are pressed by the upper mold 101 and the lower mold 102, the convex portion of the upper mold 101 is pushed into the upper transfer layer 103a, and at the same time, the convex portion of the lower mold 102 is applied to the lower transfer layer 103b. Pushed in. Therefore, a convex / concave pattern is formed on the surface of the upper transfer layer 103a. The concave / convex pattern is reversed from the imprint pattern formed on the upper mold 101. On the other hand, on the surface portion of the lower transfer layer 103b, a concavo-convex pattern having a concavo-convex state reversed from that of the imprint pattern formed on the lower mold 102 is formed. That is, by executing step S4, the double-sided simultaneous pattern transfer by the upper mold 101 and the lower mold 102 is performed on each of the upper transfer layer 103a and the lower transfer layer 103b of the substrate 103.

In the mold pressing, as shown in FIGS. 15A and 15B, the grip portion 109 a that grips the upper mold 101 and the grip portion 109 b that grips the lower mold 102 exist at positions where they do not overlap each other. In other words, the gripping portions 109a and the gripping portions 109b are alternately positioned at intervals of 60 degrees around the center pins 130a and 30b, the gripping portions 109a grip the outer arc portion 101a of the upper mold 101, and the gripping portions 109b are Since the outer circular arc portion 102a of the side mold 102 is gripped, the gripping portion 109a is located within the existing angle of the outer straight line portion 102b of the lower mold 102 and does not overlap the outer peripheral portion of the lower mold 102. The gripping part 109 b is located within the existing angle of the outer straight line part 101 b of the upper mold 101 and is not in a position overlapping the outer peripheral part of the upper mold 101. As a result, the outer

straight portions

101b and 102b serve as so-called reliefs with respect to the

grip portions

109b and 109a. Therefore, interference such as a collision between the gripping part 109a and the gripping part 109b, a collision between the gripping part 109a and the outer peripheral part of the lower mold 102, or a collision between the gripping part 109b and the outer peripheral part of the upper mold 101 in the pressing direction during pressing. Therefore, both surfaces of the substrate 103 can be simultaneously pressed by the upper mold 101 and the lower mold 102.

After the execution of step S4, the controller drives the upper UV irradiation unit and the lower UV irradiation unit (not shown) of the transfer device to emit ultraviolet rays to cure the transfer layer material, so that the upper transfer layer 103a and the lower transfer layer of the substrate 103 are cured. Irradiate toward 103b (step S7). Thus, after the transfer layer material of each of the upper transfer layer 103a and the lower transfer layer 103b is cured, the controller executes mold release to release the substrate 103 from the upper mold 101 and the lower mold 102 (step S8). . In this mold release, the controller 200 moves the upper stage upward by a predetermined distance so that the lower mold 101 is separated from the upper transfer layer 604 a of the substrate 103. Furthermore, the upper center pin 130a and the lower center pin 130b are coupled and moved upward, and the substrate 103 is lifted by the flange of the lower center pin 130b. As a result, the substrate 103 is released from the lower mold 102. To do.

Then, after releasing the mold, the controller moves the upper center pin 130a upward, removes the substrate 103 from the lower center pin 130b, and unloads the substrate 103 by the transfer device (step S9).

Next, the controller determines whether or not a command indicating the end of the operation has been issued from the operation unit (not shown) of the transfer device (step S10). If it is determined in step S10 that a command indicating the end of the operation has been supplied, the controller ends the nanoimprint operation. On the other hand, when it is determined in step S10 that the command indicating the end of the operation is not supplied, the controller returns to the execution of step S5 and repeatedly executes the operations of steps S5 to S10. Thereby, pattern transfer is continuously performed on the newly mounted substrate 103.

Furthermore, the mold manufactured by the mold manufacturing method of the present invention can be applied to applications other than the above-described disc manufacturing applications. For example, it can be applied to manufacturing applications such as semiconductor manufacturing, solar cell manufacturing, antireflection structure manufacturing, structure manufacturing for increasing light extraction efficiency such as LED, microlens array manufacturing, and microfluid chip (biochip) manufacturing. .

Claims

A method of manufacturing a mold having an imprint pattern region to be transferred to a transfer target by a transfer device,
A forming step for forming a mark for shape processing of the substrate together with the imprint pattern region on the substrate of the mold;
And a processing step of processing the substrate into a predetermined shape based on the mark of the substrate.
The manufacturing method according to claim 1, wherein the substrate has a disk shape, and a plurality of the marks are formed outside the imprint pattern region.
The substrate is disk-shaped, the imprint pattern is formed in an annular shape, and the mark is formed on an inner peripheral side or an outer peripheral side of the substrate in which the imprint pattern region is not formed. The manufacturing method according to claim 1.
4. The manufacturing method according to claim 1, wherein in the processing step, at least a predetermined portion of the substrate on which the mark is formed is removed to process the mold into the predetermined shape. 5. .
5. The mold according to claim 1, wherein the mold has a circular center hole penetrating through the center portion, and has a shape in which a plurality of outer straight line portions and outer arc portions are alternately formed on the outer periphery. The manufacturing method of any one.
The said mark is formed in the position on the said board | substrate of the outer peripheral side from the said external shape linear part which should become the said mold, and the inner peripheral side from the said external arc part which should become the said mold. The manufacturing method as described.
The manufacturing method according to any one of claims 5 to 6, wherein, in the processing step, a plurality of regions having the mark are cut out in a straight line shape so that extended lines of the external straight line portions intersect each other. Method.
The manufacturing method according to any one of claims 1 to 7, wherein the mark is formed in at least two places in the forming step.
The manufacturing method according to any one of claims 1 to 8, wherein the marks are provided at equal intervals on one circumference of the substrate.
A mold substrate processed into a mold having a predetermined shape having an imprint pattern region to be transferred to a transfer target by a transfer device,
A mold substrate, wherein the imprint pattern region and a mark for processing a part of the substrate into the predetermined shape are formed.
The mold substrate according to claim 10, wherein the imprint pattern region and the mark are formed by etching on one surface of the mold substrate.
The mold substrate according to claim 11, wherein the mark is provided in an area other than the imprint pattern area.
13. The mold substrate according to claim 10, wherein the mark is formed in a portion to be removed by processing.
The mark is formed in a portion that is removed when a plurality of locations in an outer peripheral area than the imprint pattern area of the substrate are linearly removed to form an outer straight line portion. Item 14. A mold substrate according to Item 13.
15. The mold substrate according to claim 14, wherein the extension lines of the outer straight line portions are removed so as to intersect each other.
A method for producing a mold used in a transfer device for transferring a concavo-convex pattern to both surfaces of a transfer object,
A drawing process of drawing an imprint pattern and a pattern corresponding to a mark for shape processing of the mold substrate on the resist with the same drawing apparatus on the mold substrate coated with the resist,
An etching process is performed based on a drawing pattern drawn on the resist, and a concavo-convex pattern forming step for forming a concavo-convex structure on the mold substrate;
A mold manufacturing method comprising: a processing step of processing the mold substrate into a predetermined shape using a processing device based on a concavo-convex pattern corresponding to the mark formed on the mold substrate. .