WO2012009285A1 - Alloys with low coefficient of thermal expansion as pdc catalysts and binders - Google Patents

Alloys with low coefficient of thermal expansion as pdc catalysts and binders Download PDF

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Publication number
WO2012009285A1
WO2012009285A1 PCT/US2011/043589 US2011043589W WO2012009285A1 WO 2012009285 A1 WO2012009285 A1 WO 2012009285A1 US 2011043589 W US2011043589 W US 2011043589W WO 2012009285 A1 WO2012009285 A1 WO 2012009285A1
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WO
WIPO (PCT)
Prior art keywords
catalyst material
substrate
cobalt
cutting table
cutter
Prior art date
Application number
PCT/US2011/043589
Other languages
English (en)
French (fr)
Inventor
Gary M. Thigpen
William W. King
Original Assignee
Varel International Ind., L.P.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varel International Ind., L.P. filed Critical Varel International Ind., L.P.
Priority to EP11807354.3A priority Critical patent/EP2593630A1/en
Priority to RU2013106267/03A priority patent/RU2576724C2/ru
Priority to CN2011800436532A priority patent/CN103261564A/zh
Publication of WO2012009285A1 publication Critical patent/WO2012009285A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D99/00—Subject matter not provided for in other groups of this subclass
    • B24D99/005—Segments of abrasive wheels
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH OR ROCK DRILLING; MINING
    • E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00—Drill bits
    • E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
    • E21B10/56—Button-type inserts
    • E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
    • E21B10/573—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts characterised by support details, e.g. the substrate construction or the interface between the substrate and the cutting element
    • E21B10/5735—Interface between the substrate and the cutting element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C2204/00—End product comprising different layers, coatings or parts of cermet

Definitions

  • the present invention relates generally to polycrystalline diamond compact (“PDC”) cutters; and more particularly, to PDC cutters having improved thermal stability.
  • PDC polycrystalline diamond compact
  • PDC Polycrystalline diamond compacts
  • HPHT high pressure and high temperature
  • the PDC can be formed by sintering individual diamond particles together under the high pressure and high temperature (“HPHT") conditions referred to as the "diamond stable region,” which is typically above forty kilobars and between 1 ,200 degrees Celsius and 2,000 degrees Celsius, in the presence of a catalyst/solvent which promotes diamond- diamond bonding.
  • catalyst/solvents for sintered diamond compacts are cobalt, nickel, iron, and other Group VIII metals.
  • PDCs usually have a diamond content greater than seventy percent by volume, with about eighty percent to about ninety-five percent being typical.
  • An unbacked PDC can be mechanically bonded to a tool (not shown), according to one example.
  • the PDC can be bonded to a substrate, thereby forming a PDC cutter, which is typically insertable within a downhole tool (not shown), such as a drill bit or a reamer.
  • Figure 1 shows a side view of a PDC cutter 100 having a polycrystalline diamond (“PCD”) cutting table 1 10, or compact, in accordance with the prior art.
  • PCD polycrystalline diamond
  • the PDC cutter 100 typically includes the PCD cutting table 1 10 and a substrate 150 that is coupled to the PCD cutting table 1 10.
  • the PCD cutting table 1 10 is about one hundred thousandths of an inch (2.5 millimeters) thick; however, the thickness is variable depending upon the application in which the PCD cutting table 1 10 is to be used.
  • the substrate 150 includes a top surface 152, a bottom surface 154, and a substrate outer wall 156 that extends from the circumference of the top surface 152 to the circumference of the bottom surface 154.
  • the PCD cutting table 1 10 includes a cutting surface 1 12, an opposing surface 1 14, and a PCD cutting table outer wall 116 that extends from the circumference of the cutting surface 1 12 to the circumference of the opposing surface 1 14.
  • the opposing surface 1 14 of the PCD cutting table 1 10 is coupled to the top surface 152 of the substrate 150.
  • the PCD cutting table 1 10 is coupled to the substrate 150 using a high pressure and high temperature (“HPHT”) press.
  • HPHT high pressure and high temperature
  • the cutting surface 1 12 of the PCD cutting table 1 10 is substantially parallel to the substrate's bottom surface 154.
  • the PDC cutter 100 has been illustrated as having a right circular cylindrical shape; however, the PDC cutter 100 is shaped into other geometric or non-geometric shapes in other embodiments.
  • the opposing surface 1 14 and the top surface 152 are substantially planar; however, the opposing surface 1 14 and the top surface 152 can be non-planar in other embodiments.
  • a bevel (not shown) is formed around at least the circumference of the PCD cutting table 1 10.
  • the PDC cutter 100 is formed by independently forming the PCD cutting table 1 10 and the substrate 150, and thereafter bonding the PCD cutting table 1 10 to the substrate 150.
  • the substrate 1 50 is initially formed and the PCD cutting table 1 10 is then formed on the top surface 152 of the substrate 150 by placing polycrystalline diamond powder onto the top surface 152 and subjecting the polycrystalline diamond powder and the substrate 150 to a high temperature and high pressure process.
  • the substrate 150 and the PCD cutting table 1 10 are formed and bonded together at about the same time.
  • the PCD cutting table 1 10 is formed and bonded to the substrate 150 by subjecting a layer of diamond powder and a mixture of tungsten carbide and cobalt powders to HPHT conditions.
  • the cobalt is typically mixed with tungsten carbide and positioned where the substrate 150 is to be formed.
  • the diamond powder is placed on top of the cobalt and tungsten carbide mixture and positioned where the PCD cutting table 1 10 is to be formed.
  • the entire powder mixture is then subjected to HPHT conditions so that the cobalt melts and facilitates the cementing, or binding, of the tungsten carbide to form the substrate 150.
  • the melted cobalt also diffuses, or infiltrates, into the diamond powder and acts as a catalyst for synthesizing diamonds and forming the PCD cutting table 1 10.
  • the cobalt acts as both a binder for cementing the tungsten carbide and as a catalyst/solvent for the sintering of the diamond powder to form diamond- diamond bonds.
  • the cobalt also facilitates in forming strong bonds between the PCD cutting table 1 10 and the cemented tungsten carbide substrate 150.
  • Cobalt has been a preferred constituent of the PDC manufacturing process.
  • Traditional PDC manufacturing processes use cobalt as the binder material for forming the substrate 150 and also as the catalyst material for diamond synthesis because of the large body of knowledge related to using cobalt in these processes.
  • the synergy between the large bodies of knowledge and the needs of the process have led to using cobalt as both the binder material and the catalyst material.
  • alternative metals such as iron, nickel, chromium, manganese, and tantalum, can be used as a catalyst for diamond synthesis.
  • cobalt or some other material such as nickel chrome or iron, is typically used as the binder material for cementing the tungsten carbide to form the substrate 150.
  • some materials, such as tungsten carbide and cobalt have been provided as examples, other materials known to people having ordinary skill in the art can be used to form the substrate 1 50, the PCD cutting table 1 10, and form bonds between the substrate 1 50 and the PCD cutting table 1 10.
  • Figure 2 is a schematic microstructural view of the PCD cutting table
  • the PCD cutting table 1 10 has diamond particles 210, one or more interstitial spaces 212 formed between the diamond particles 210, and cobalt 214 deposited within the interstitial spaces 212.
  • the interstitial spaces 212, or voids are formed between the carbon-carbon bonds and are located between the diamond particles 210.
  • the diffusion of cobalt 214 into the diamond powder results in cobalt 214 being deposited within these interstitial spaces 212 that are formed within the PCD cutting table 1 10 during the sintering process.
  • the PCD cutting table 1 10 is known to wear quickly when the temperature reaches a critical temperature.
  • This critical temperature is about 750 degrees Celsius and is reached when the PCD cutting table 1 10 is cutting rock formations or other known materials.
  • the high rate of wear is believed to be caused by the differences in the thermal expansion rate between the diamond particles 210 and the cobalt 214 and also by the chemical reaction, or graphitization, that occurs between cobalt 214 and the diamond particles 210.
  • the coefficient of thermal expansion for the diamond particles 210 is about 1 .0 x 10 *6 millimeters “1 x Kelvin “1 ("mm ⁇ K “1 "), while the coefficient of thermal expansion for the cobalt 214 is about 13.0 x 10 "6 mm ' ' ' ' .
  • the cobalt 214 expands much faster than the diamond particles 210 at temperatures above this critical temperature, thereby making the bonds between the diamond particles 210 unstable.
  • the PCD cutting table 1 10 becomes thermally degraded at temperatures above about 750 degrees Celsius and its cutting efficiency deteriorates significantly.
  • the acid solution slowly moves inwardly within the interior of the PCD cutting table 1 10 and continues to react with the cobalt 214.
  • the reaction byproducts become increasingly more difficult to remove; and hence, the rate of leaching slows down considerably.
  • the leaching depth is typically about 0.2 millimeter, but can be more or less depending upon the PCD cutting table 1 10 requirements and/or the cost constraints.
  • the removal of cobalt 214 alleviates the issues created due to the differences in the thermal expansion rate between the diamond particles 210 and the cobalt 214 and due to graphitization.
  • the leaching process is costly and also has other deleterious effects on the PCD cutting table 1 10, such as loss of strength.
  • Figure 1 shows a side view of a PDC cutter having a PCD cutting table in accordance with the prior art
  • Figure 2 is a schematic microstructural view of the PCD cutting table of Figure 1 in accordance with the prior art
  • Figure 3A is a side view of a pre-sintered PDC cutter in accordance with an exemplary embodiment of the present invention.
  • Figure 3B is a side view of a PDC cutter formed from sintering the pre- sintered PDC cutter of Figure 3A in accordance with an exemplary embodiment of the present invention
  • Figure 4A is a side view of a pre-sintered PDC cutter in accordance with another exemplary embodiment of the present invention
  • Figure 4B is a side view of a PDC cutter formed from sintering the pre- sintered PDC cutter of Figure 4A in accordance with another exemplary embodiment of the present invention.
  • Figure 5 is a phase diagram of cobalt and Element X in accordance with an exemplary embodiment of the present invention.
  • the present invention is directed generally to polycrystalline diamond compact (“PDC”) cutters; and more particularly, to PDC cutters having improved thermal stability.
  • PDC polycrystalline diamond compact
  • PCBN polycrystalline boron nitride
  • alternate embodiments of the invention may be applicable to other types of cutters or compacts including, but not limited to, polycrystalline boron nitride ("PCBN”) cutters or PCBN compacts.
  • PCBN polycrystalline boron nitride
  • the compact is mountable to a substrate to form a cutter or is mountable directly to a tool for performing cutting processes.
  • Figure 3A is a side view of a pre-sintered PDC cutter 300 in accordance with an exemplary embodiment of the present invention.
  • Figure 3B is a side view of a PDC cutter 350 formed from sintering the pre-sintered PDC cutter 300 of Figure 3A in accordance with an exemplary embodiment of the present invention.
  • Figures 3A and 3B provide one example for forming the PDC cutter 350.
  • the pre-sintered PDC cutter 300 includes a substrate layer 310 and a PCD cutting table layer 320, while the PDC cutter 350 includes a substrate 360 and a PCD cutting table 370.
  • the substrate layer 310 is positioned at the bottom of the pre-sintered PDC cutter 300 and forms the substrate 360 upon performing the sintering process.
  • the PCD cutting table layer 320 is positioned atop the substrate layer 310 and forms the PCD cutting table 370 upon performing the sintering process.
  • the PCD cutting table 370 is positioned atop the substrate 360.
  • the substrate layer 310 is formed from a mixture of substrate powder
  • the substrate powder 332 is tungsten carbide powder; however, the substrate powder 332 is formed from other suitable material known to people having ordinary skill in the art without departing from the scope and spirit of the exemplary embodiment according to other exemplary embodiments.
  • the binder/catalyst material 334 is any material capable of behaving as a binder material for the substrate powder 310 and as a catalyst material for the diamond powder 336, or any other material, that forms the PCD cutting table layer 320. Additionally, the binder/catalyst material 334 has a coefficient of thermal expansion that is less than the coefficient of thermal expansion of cobalt and/or has a higher thermal conductivity than the thermal conductivity of cobalt.
  • the coefficient of thermal expansion for cobalt is about 13.0 x 10 "6 mm “1 K “1 .
  • the thermal conductivity for cobalt is about 100.0 Watts/(meters x Kelvin) ("W/(mK)").
  • Some examples of the binder/catalyst material 334 includes, but is not limited to, chromium, tantalum, ruthenium, certain alloys of cobalt such as cobalt/molybdenum, cobalt/chromium, or cobalt/nickel/chrome, certain alloys of a Group VIII metal and at least one non- catalyst metal, and certain alloys of two or more Group VIII metals, wherein the alloys furnish a net reduction in the coefficient of thermal expansion and/or a net increase in the thermal conductivity.
  • the binder/catalyst material 334 includes any eutectic or near eutectic alloy that is effective as a catalyst material for diamond synthesis while exhibiting either a lower coefficient of thermal expansion than cobalt and/or a higher thermal conductivity than cobalt.
  • a near eutectic alloy is defined to include alloy compositions that are within plus or minus ten atomic weight percent from the eutectic composition as long as the melting point of cobalt is not exceeded.
  • the carbon-carbon bonds which form the PCD cutting table 370 are more stable than if cobalt were used because the binder/catalyst material 334 expands at a lesser rate than cobalt. Hence, the carbon-carbon bonds are better able to withstand the expansion of the binder/catalyst material 334 than the expansion of cobalt at the same temperature.
  • the heat generated within the PCD cutting table 370 dissipates better when the binder/catalyst material 334 is used to form the PCD cutting table 370 than when cobalt is used.
  • the PCD cutting table 370 is able to withstand more heat generation and hence higher temperatures when the binder/catalyst material 334 is used to form the PCD cutting table 370.
  • the substrate layer 310 forms the substrate 360.
  • the substrate layer 310 includes a top layer surface 312, a bottom layer surface 314, and a substrate layer outer wall 316 that extends from the circumference of the top layer surface 312 to the circumference of the bottom layer surface 314.
  • the substrate layer 310 is formed into a right circular cylindrical shape according to one exemplary embodiment, but can be formed into other geometric or non-geometric shapes.
  • the PCD cutting table layer 320 is formed from a diamond powder
  • the PCD cutting table layer 320 includes the diamond powder 336 and the binder/catalyst material 334. Once subjected to high pressure and high temperature conditions, the PCD cutting table layer 320 forms the PCD cutting table 370.
  • the PCD cutting table layer 320 includes a cutting layer surface 322, an opposing layer surface 324, and a PCD cutting table layer outer wall 326 that extends from the circumference of the cutting layer surface 322 to the circumference of the opposing layer surface 324.
  • the pre-sintered PDC cutter 300 is subjected to high pressure and high temperature conditions to form the PDC cutter 350.
  • the binder/catalyst material 334 liquefies within the substrate layer 310 and advances, or infiltrates, into the PCD cutting table layer 320.
  • the binder/catalyst material 334 behaves as a binder material for the substrate powder 332, which then is cemented, or binded, to form a cemented substrate powder 382.
  • the liquefied binder/catalyst material 334 diffuses into the PCD cutting table layer 320 from the substrate layer 310 and also behaves as a catalyst material for the diamond powder 336 within the PCD cutting table layer 320.
  • the binder/catalyst material 334 facilitates diamond crystal intergrowth, thereby transforming the diamond powder 336 into a diamond lattice 386.
  • the diamond lattice 386 includes interstitial spaces (not shown), which is similar to the interstitial spaces 212 ( Figure 2), that are formed during the sintering process.
  • the binder/catalyst material 334 is deposited within these interstitial spaces.
  • the diamond lattice 386 along with the binder/catalyst material 334 deposited within the interstitial spaces, forms the PCD cutting table 370 upon completion of the sintering process.
  • the diamond lattice 386 is formed in the PCD cutting table 370, other lattices are formed in the PCD cutting table 370 when other materials, different than diamond powder 336, is used.
  • the binder/catalyst material 334 also facilitates in forming bonds between the PCD cutting table 370 and the substrate 360.
  • the PDC cutter 350 is formed once the substrate 360 and the PCD cutting layer 370 are completely formed and the substrate 360 is bonded to the PCD cutting layer 370.
  • the substrate 360 includes a top surface 362, a bottom surface 364, and a substrate outer wall 366 that extends from the circumference of the top surface 362 to the circumference of the bottom surface 364.
  • the substrate 360 includes cemented substrate powder 382 and binder/catalyst material 334 interspersed therein.
  • the substrate 360 is formed into a right circular cylindrical shape according to one exemplary embodiment, but can be formed into other geometric or non-geometric shapes depending upon the application for the PDC cutter 350.
  • the PCD cutting table 370 includes a cutting surface 372, an opposing surface 374, and a PCD cutting table outer wall 376 that extends from the circumference of the cutting surface 372 to the circumference of the opposing surface 374.
  • the PCD cutting table 370 includes the diamond lattice 386 and the binder/catalyst material 334 deposited within the interstitial spaces formed within the diamond lattice 386.
  • the opposing surface 374 is bonded to the top surface 362. According to some exemplary embodiments, a bevel (not shown) is formed around the circumference of the PCD cutting table 370.
  • the PCD cutting table 370 is bonded to the substrate 360 according to methods known to people having ordinary skill in the art.
  • the PDC cutter 350 is formed by independently forming the PCD cutting table 370 and the substrate 360, and thereafter bonding the PCD cutting table 370 to the substrate 360.
  • the substrate 360 is initially formed and the PCD cutting table 370 is then formed on the top surface 362 of the substrate 360 by placing polycrystalline diamond powder 336 onto the top surface 362 and subjecting the polycrystalline diamond powder 336 and the substrate 360 to a high temperature and high pressure process.
  • the cutting surface 372 of the PCD cutting table 370 is substantially parallel to the bottom surface 364 of the substrate 360.
  • the PDC cutter 350 has been illustrated as having a right circular cylindrical shape; however, the PDC cutter 350 is shaped into other geometric or non-geometric shapes in other exemplary embodiments.
  • the opposing surface 374 and the top surface 362 are substantially planar; however, the opposing surface 374 and the top surface 362 can be non-planar in other exemplary embodiments.
  • Figure 4A is a side view of a pre-sintered PDC cutter 400 in accordance with another exemplary embodiment of the present invention.
  • Figure 4B is a side view of a PDC cutter 450 formed from sintering the pre-sintered PDC cutter 400 of Figure 4A in accordance with another exemplary embodiment of the present invention.
  • Figures 4A and 4B provide one example for forming the PDC cutter 450.
  • the pre-sintered PDC cutter 400 includes a substrate layer 410 and a PCD cutting table layer 420, while the PDC cutter 450 includes a substrate 460 and a PCD cutting table 470.
  • the substrate layer 410 is positioned at the bottom of the pre-sintered PDC cutter 400 and forms the substrate 460 upon performing the sintering process.
  • the PCD cutting table layer 420 is positioned atop the substrate layer 410 and forms the PCD cutting table 470 upon performing the sintering process.
  • the PCD cutting table 470 is positioned atop the substrate 460.
  • the substrate layer 410 is formed from a mixture of a substrate powder
  • the substrate powder 432 is tungsten carbide powder; however, the substrate powder 432 is formed from other suitable material known to people having ordinary skill in the art without departing from the scope and spirit of the exemplary embodiment according to some other exemplary embodiments.
  • the binder material 434 is any material capable of behaving as a binder for the substrate powder 410. Some examples of the binder material 434 include, but are not limited to, cobalt, nickel chrome, and iron.
  • the substrate layer 410 includes a top layer surface 412, a bottom layer surface 414, and a substrate layer outer wall 416 that extends from the circumference of the top layer surface 412 to the circumference of the bottom layer surface 414.
  • the substrate layer 410 is formed into a right circular cylindrical shape according to one exemplary embodiment, but can be formed into other geometric or non-geometric shapes.
  • the PCD cutting table layer 420 is formed from a mixture of a diamond powder 436 and a catalyst material 438.
  • diamond powder 436 is used to form the PCD cutting table layer 420, other suitable materials known to people having ordinary skill in the art can be used without departing from the scope and spirit of the exemplary embodiment.
  • the catalyst material 438 is any material capable of behaving as a catalyst for the diamond powder 436 that forms the PCD cutting table layer 420 or for any other material that is used to form the PCD cutting table 470. Additionally, the catalyst material 438 has a coefficient of thermal expansion that is less than the coefficient of thermal expansion of cobalt and/or has a higher thermal conductivity than the thermal conductivity of cobalt.
  • the coefficient of thermal expansion for cobalt is about 13.0 x 10 "6 mm “1 K “1 .
  • the thermal conductivity for cobalt is about 100.0 W/(mK).
  • the catalyst material 438 include, but are not limited to, chromium, tantalum, ruthenium, certain alloys of cobalt such as cobalt/molybdenum, cobalt/chromium, or cobalt/nickel/chrome, certain alloys of a Group VIII metal and at least one non- catalyst metal, and certain alloys of two or more Group VIII metals, wherein the alloys furnish a net reduction in the coefficient of thermal expansion and/or a net increase in the thermal conductivity.
  • the catalyst material 438 includes any eutectic or near eutectic alloy that is effective as a catalyst for diamond synthesis while exhibiting a lower coefficient of thermal expansion than cobalt and/or a higher thermal conductivity than cobalt.
  • the carbon-carbon bonds which form the PCD cutting table 470 are more stable than if cobalt were used because the catalyst material 438 expands at a lesser rate than cobalt. Hence, the carbon-carbon bonds are better able to withstand the expansion of the catalyst material 438 than the expansion of cobalt at the same temperature. If the catalyst material 438 has a higher thermal conductivity than cobalt, the heat generated within the PCD cutting table 470 dissipates better when the catalyst material 438 is used to form the PCD cutting table 470 than when cobalt is used. Thus, the PCD cutting table 470 is able to withstand more heat generation and hence higher temperatures when the catalyst material 438 is used to form the PCD cutting table 470.
  • the melting point of the catalyst material 438 is lower than the melting point of the binder material 434.
  • the melting point of cobalt, which can be used as the binder material 434 is about 1495 degrees Celsius.
  • the binder material 434 and the catalyst material 438 are different materials; however, the binder material 434 and the catalyst material 438 can be the same material according to some exemplary embodiments.
  • the PCD cutting table layer 420 includes a cutting layer surface 422, an opposing layer surface 424, and a PCD cutting table layer outer wall 426 that extends from the circumference of the cutting layer surface 422 to the circumference of the opposing layer surface 424.
  • a bevel (not shown) is formed around the circumference of the PCD cutting table 470.
  • the temperature is initially brought to a first temperature, which is the melting point of the catalyst material 438 according to some exemplary embodiments.
  • the first temperature is higher than the melting point of the catalyst material 438, but maintained below a second temperature, which is discussed in further detail below.
  • the first temperature can be varied within this range that is between the first temperature and the second temperature.
  • the catalyst material 438 liquefies within the PCD cutting table layer 470 and facilitates diamond crystal intergrowth, thereby transforming the diamond powder 436 into a diamond lattice 486.
  • the diamond lattice 486 includes interstitial spaces (not shown), which is similar to the interstitial spaces 212 ( Figure 2), that are formed during the sintering process.
  • the catalyst material 438 is deposited within these interstitial spaces.
  • the diamond lattice 486 is formed in the PCD cutting table 470, other lattices are formed in the PCD cutting table 470 when other materials, different than diamond powder 436, is used.
  • the temperature is then increased from the first temperature to at least a second temperature, which is the melting point of the binder material 434 or some other higher temperature above the melting point of the binder material 434.
  • the binder material 434 liquefies within the substrate layer 410 and facilitates cementing of the substrate powder 432, thereby transforming the substrate powder 432 into a cemented substrate powder 482.
  • the binder material 434 and/or the catalyst material 438 facilitate forming bonds between the PCD cutting table 470 and the substrate 460.
  • the PDC cutter 450 is formed once the substrate 460 and the PCD cutting layer 470 are completely formed and the substrate 460 is bonded to the PCD cutting layer 470.
  • the substrate 460 includes a top surface 462, a bottom surface 464, and a substrate outer wall 466 that extends from the circumference of the top surface 462 to the circumference of the bottom surface 464.
  • the substrate 460 includes cemented substrate powder 482 and binder material 434 interspersed therein.
  • the substrate 460 is formed into a right circular cylindrical shape according to one exemplary embodiment, but can be formed into other geometric or non-geometric shapes depending upon the application for the PDC cutter 450.
  • the PCD cutting table 470 includes a cutting surface 472, an opposing surface 474, and a PCD cutting table outer wall 476 that extends from the circumference of the cutting surface 472 to the circumference of the opposing surface 474.
  • the PCD cutting table 470 includes the diamond lattice 486 and the catalyst material 438 deposited within the interstitial spaces formed within the diamond lattice 486.
  • the opposing surface 474 is bonded to the top surface 462.
  • the PCD cutting table 470 is bonded to the substrate 460 according to methods known to people having ordinary skill in the art. (n one example, the PDC cutter 450 is formed by independently forming the PCD cutting table 470 and the substrate 460, and thereafter bonding the PCD cutting table 470 to the substrate 460. In another example, the substrate 460 is initially formed and the PCD cutting table 470 is then formed on the top surface 462 of the substrate 460 by placing polycrystalline diamond powder 436 onto the top surface 462 and subjecting the polycrystalline diamond powder 436 and the substrate 460 to a high temperature and high pressure process.
  • the cutting surface 472 of the PCD cutting table 470 is substantially parallel to the bottom surface 464 of the substrate 460.
  • the PDC cutter 450 has been illustrated as having a right circular cylindrical shape; however, the PDC cutter 450 is shaped into other geometric or non-geometric shapes in other exemplary embodiments.
  • the opposing surface 474 and the top surface 462 are substantially planar; however, the opposing surface 474 and the top surface 462 can be non-planar in other exemplary embodiments.
  • the binder/catalyst material 334 ( Figure 3) and the catalyst material 438 are an alloy of cobalt or some other group VIII metal which exhibit a lower coefficient of thermal expansion than cobalt and/or a higher thermal conductivity than cobalt according to some exemplary embodiments.
  • An alloy is a combination, either in solution or compound, of two or more elements, at least one of which is a metal, and where the resultant material alloy has metallic properties. Unlike pure metals, many alloys do not have a single melting point. Instead, many alloys have a temperature range where the material begins melting at one lower temperature and is completely melted at another higher temperature.
  • the material is a mixture of solid and liquid phases when subjected to a temperature between these two temperatures.
  • the temperature at which the alloy starts melting is referred to as the solidus, while the temperature at which the alloy is completely melted is referred to as the liquidus.
  • the binder/catalyst material 334 ( Figure 3) and the catalyst material 438 are a eutectic alloy or near eutectic alloy which exhibits a lower coefficient of thermal expansion than cobalt and/or a higher thermal conductivity than cobalt.
  • Eutectic alloys are fabricated to melt at a single melting point temperature and not within a temperature range.
  • the eutectic alloy is an alloy formed from the mixture of two or more elements which has a lower melting point that any of its elements that are used to form the eutectic alloy.
  • the alloy or eutectic alloy is formed by preparing a homogeneous mixture of the two or more elements that form the alloy or eutectic alloy. The proper ratios of components to obtain a eutectic alloy is identified by the eutectic point on a phase diagram, which is discussed in further detail with respect to Figure 5.
  • Table I Provided below in Table I is a list of elements that can be alloyed with cobalt to form a eutectic alloy that has a resulting coefficient of thermal expansion that is lower than the coefficient of thermal expansion for cobalt.
  • the elements of carbon and cobalt are provided as references in Table I since carbon is used to form the PCD cutting table, while cobalt is the typical catalyst material 438 or binder/catalyst material 334 ( Figure 3) that is deposited within the interstitial spaces formed between the carbon bonds in the PCD cutting table 370 and 470.
  • the eutectic alloy being used as the catalyst material 438 or the binder/catalyst material 334 ( Figure 3) in exemplary embodiments of the present invention should have a lower resulting coefficient of thermal expansion and/or a higher resulting thermal conductivity than cobalt alone.
  • cobalt is being chosen as one of the alloying elements, any other group Vlll metal can be chosen as the alloying element according to other exemplary embodiments.
  • each element is provided with values for a "Co-Eu,” a “thermal expansion,” a “melting point,” and a “thermal conductivity.”
  • the value for the "Co-Eu” is the eutectic melting temperature, or eutectic melting point, when the corresponding element is alloyed with cobalt in accordance with a eutectic composition.
  • the value for the "thermal expansion” is the coefficient of thermal expansion for the corresponding element. These coefficients of thermal expansion are less than the coefficient of thermal expansion for cobalt. Once the element is alloyed with cobalt, the resulting coefficient of thermal expansion for the alloy is less than the coefficient of thermal expansion for cobalt.
  • the coefficient of thermal expansion for the eutectic alloy also is less than the coefficient of thermal expansion for cobalt.
  • the value for the "melting point” is the melting point for the corresponding element. As seen the eutectic melting temperature for when the corresponding element is alloyed with cobalt is less than the melting point of either the cobalt and the corresponding element.
  • the value for the "thermal conductivity” is the thermal conductivity for the corresponding element. These thermal conductivity values are higher or lower than the thermal conductivity for cobalt. Once the element is alloyed with cobalt, the resulting thermal conductivity value for the alloy is between the thermal conductivity for the corresponding element and the thermal conductivity for cobalt.
  • the alloy, or eutectic alloy, that is to be used for the catalyst material 438 and the binder/catalyst material 334 can be chosen appropriately to have either a lower coefficient of thermal expansion and/or a higher thermal conductivity.
  • FIG. 5 is a phase diagram of cobalt and Element X 500 in accordance with an exemplary embodiment of the present invention.
  • phase diagram of cobalt and Element X 500 is provided as an example according to one exemplary embodiment, different phase diagrams of cobalt and one or more other elements or a group VIII element with one or more other elements can be used for obtaining a eutectic point, which is described in further detail below, according to other exemplary embodiments.
  • the phase diagram of cobalt and Element X 500 includes a composition axis 510, a temperature axis 520, a liquidus line 534, a solidus line 536, and a eutectic point 538.
  • the composition axis 510 is positioned on the x-axis and represents the composition of the alloy used as the catalyst material and/or the binder/catalyst material.
  • the composition is measured in atomic weight percent of Element X. Proceeding from left to right along the composition axis 510, the composition of Element X increases. Thus, at the extreme left of the composition axis 510, the material is one hundred percent cobalt. Conversely, at the extreme right of the composition axis 510, the material is one hundred percent element X.
  • the composition axis 510 includes a eutectic composition 540, which is discussed in further detail below.
  • the temperature axis 520 is positioned on the y-axis and represents the various temperatures that can be subjected on the alloy. The temperature is measured in degrees Celsius. Proceeding from top to bottom along the temperature axis 520, the temperature decreases.
  • the temperature axis 520 includes a cobalt melting temperature 532, an Element X melting temperature 530, and a eutectic melting temperature 539, which is discussed in further detail below.
  • the cobalt melting temperature 532 is the temperature at which a material having one hundred percent cobalt melts.
  • the Element X melting temperature 530 is the temperature at which a material having one hundred percent Element X melts.
  • the phase diagram of cobalt and Element X 500 provides information on different phases of the cobalt and Element X alloy and under what compositions and temperatures these different phases exist. These phases include the total liquid phase 550 (“Liquid”), the total solid phase 552 (“Solid”), a cobalt slurry phase 554 ("L+Co s "), an Element X slurry phase 556 ("L+X s "), a cobalt solid phase 558 (“Co s "), and a Element X solid phase 560 ("X s ").
  • the total liquid phase 550 occurs when both cobalt and Element X are both completely in the liquid phase.
  • the total solid phase 552 occurs when both cobalt and Element X are both completely in the solid phase.
  • the cobalt slurry phase 554 occurs when the material has cobalt crystals that is suspended in a slurry which also includes liquid cobalt.
  • the Element X phase 556 occurs when the material has Element X crystals that is suspended in a slurry which also includes liquid Element X.
  • the cobalt solid phase 558 occurs when all the cobalt is in solid phase and at least some portion of the Element X is in liquid phase.
  • the Element X solid phase 560 occurs when all the Element X is in solid phase and at least some portion of the cobalt is in liquid phase.
  • the liquidus line 534 extends from the cobalt melting temperature 532 to a eutectic point 538 and then to the Element X melting temperature 530.
  • the liquidus line 534 represents the temperature at which the alloy completely melts and forms a liquid. Thus, at temperatures above the liquidus line 534, the alloy is completely liquid.
  • the solidus line 536 also extends from the cobalt melting temperature 532 to a eutectic point 538 and then to the Element X melting temperature 530.
  • the solidus line 536 is positioned below the liquidus line 534, except for at the eutectic point 538.
  • the solidus line 536 represents the temperature at which the alloy begins to melt. Thus, at temperatures below the solidus line 536, the alloy is completely solid.
  • the liquidus line 534 intersects with the solidus line 536.
  • the eutectic point 538 is defined on the phase diagram 500 as the intersection of the eutectic temperature 539 and the eutectic composition 540.
  • the eutectic composition 540 is the composition where the alloy behaves as a single chemical composition and has a melting point where the total solid phase turns into a total liquid phase at a single temperature.
  • one benefit for using the eutectic alloy for the catalyst material and/or the binder/catalyst material is that the eutectic alloy behaves as a single composition.

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