WO2012002114A1 - 露光装置 - Google Patents
露光装置 Download PDFInfo
- Publication number
- WO2012002114A1 WO2012002114A1 PCT/JP2011/063061 JP2011063061W WO2012002114A1 WO 2012002114 A1 WO2012002114 A1 WO 2012002114A1 JP 2011063061 W JP2011063061 W JP 2011063061W WO 2012002114 A1 WO2012002114 A1 WO 2012002114A1
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- WIPO (PCT)
- Prior art keywords
- lens
- exposure
- lens assembly
- photomask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Definitions
- the present invention relates to an exposure apparatus that irradiates an object to be exposed held on a stage with exposure light via a photomask to expose and form a predetermined pattern.
- the present invention relates to an exposure apparatus that is capable of performing the above exposure with high resolution.
- This type of conventional exposure apparatus is an exposure apparatus that intermittently irradiates an exposure object conveyed at a constant speed through a photomask and exposes the mask pattern of the photomask to a predetermined position.
- a plurality of light sources arranged in a direction substantially perpendicular to the transport direction, the exposure position by the photomask, or a position in front of the exposure position in the transport direction of the object to be exposed.
- a first imaging means having a light receiving element and an exposure position by the photomask, or a position on the nearer side of the exposure object in the transport direction than the exposure position, are disposed and are substantially parallel to the transport direction.
- the second imaging means having a plurality of light receiving elements arranged in a row, the object to be exposed and the photomask are relatively moved in a direction substantially perpendicular to the transport direction to correct the exposure position by the photomask.
- the driving of the alignment means is controlled based on the detected first reference position.
- the exposure light irradiation timing is set while conveying the substrate in one direction at a constant speed.
- the photomask close to and opposed to the substrate, the presence of a viewing angle (collimation half angle) in the light source light irradiated to the photomask blurs the pattern image on the substrate and lowers the resolution.
- a viewing angle collimation half angle
- Such a problem can be dealt with by using a stepper exposure apparatus that performs exposure by reducing and projecting an image of a photomask on a substrate with an imaging lens. For example, a large area of 1 m square or more is used. In the case of performing exposure on a substrate, there is a problem that the lens diameter to be used becomes large corresponding to the size of the substrate and becomes expensive.
- an object of the present invention is to provide an exposure apparatus capable of addressing such problems and performing exposure of a non-periodic pattern on a large-area exposure object with high resolution.
- an exposure apparatus is parallel to a surface of an object to be exposed and a surface of the photomask between a stage on which the object to be exposed is mounted and a photomask on which a mask pattern is formed.
- a plurality of lens groups formed so as to be movable in a plane and capable of forming an equal-size erect image of the mask pattern of the photomask on the surface of the object to be exposed, in a direction that intersects the moving direction.
- a plurality of unit lens assemblies arranged in a pitch to form a plurality of lens rows are arranged to be arranged in a row in a direction intersecting with the moving direction, and each unit lens assembly includes a lens assembly.
- the lens groups are shifted from each other by a certain amount in the direction intersecting the moving direction so that the lens groups are arranged in parallel to an axis that obliquely intersects the moving direction of the lens assembly. And a configuration in which end portions adjacent to each other are cut away in parallel to the axis, and the lens groups of the lens rows are arranged at a constant arrangement pitch over the entire lens assembly. It is a thing.
- each lens array is moved in such a manner that a plurality of lens groups arranged at a constant arrangement pitch of the plurality of lens arrays are aligned in parallel to an axis that obliquely intersects the moving direction of the lens assembly.
- a plurality of unit lens assemblies that are formed by shifting each other by a certain amount in a direction crossing the direction and cutting the end portions adjacent to each other in parallel to the axis line, the lens group of each lens row as a whole.
- each unit lens assembly is obtained by shifting each lens row mutually in a direction crossing the moving direction so that a part of each lens group overlaps when viewed in the moving direction of the lens assembly. is there.
- one lens row of adjacent lens rows is shifted by a predetermined amount in the direction intersecting the moving direction so that a part of each lens group of each lens row overlaps when viewed in the moving direction of the lens assembly.
- the mask pattern of the photomask is exposed on the object to be exposed while moving the lens assembly provided.
- the lens assembly includes a first lens array, a second lens array, a third lens array, and a fourth lens array in which a plurality of convex lenses are formed so as to correspond to the front and back surfaces of a transparent substrate. And an intermediate inverted image of the mask pattern of the photomask is formed between the second lens array and the third lens array. Accordingly, the first, second, third and fourth lens arrays formed with a plurality of convex lenses corresponding to each other on the front and back surfaces of the transparent substrate are overlapped with each other so that the optical axes of the corresponding convex lenses coincide with each other.
- a lens assembly configured to form an intermediate inverted image of the mask pattern of the photomask between the second lens array and the third lens array, so that the mask pattern formed on the photomask is an equal magnification.
- a standing image is formed on the surface of the object to be exposed.
- the lens assembly is provided with a first aperture having a predetermined shape adjacent to the surface of the convex lens positioned on the upstream side in the light traveling direction of the third lens array, and an exposure area by the unit lens is provided. This is limited to the center of the lens. As a result, the exposure area of the unit lens is defined by the first aperture having a predetermined aperture provided close to the surface of the convex lens positioned upstream of the light traveling direction of the third lens array of the lens assembly. Limit to the center.
- the opening of the first diaphragm is an opening having a rectangular shape in plan view, and the area of a portion that overlaps with a part of the opening of the first diaphragm adjacent in the moving direction of the lens assembly is the entire overlapping part. A part of the light is shielded so as to be half the area.
- the rectangular opening in plan view the area of the portion that overlaps with a part of the opening of the first aperture that is adjacent when viewed in the moving direction of the lens assembly is half the area of the entire overlapping portion.
- the exposure area is limited by the opening of the first diaphragm having a shape where the portion is shielded from light, and the mask pattern of the photomask is exposed on the surface of the object to be exposed. In this case, a predetermined amount of exposure is performed by overexposure of a lens group existing ahead of the moving direction of the lens assembly.
- the lens assembly is provided with a second diaphragm that restricts a light beam diameter in the vicinity of the lens surface on the upstream side in the light traveling direction of the fourth lens array.
- the diameter of the light beam is limited by the second diaphragm provided in the vicinity of the lens surface upstream of the light traveling direction of the four lens arrays.
- the stage is capable of transporting the object to be exposed in one direction, and the lens assembly is moved in a state where the movement of the stage is temporarily stopped. Accordingly, the stage that is transporting the object to be exposed in one direction is temporarily stopped, and the lens assembly is moved in this stopped state to expose the mask pattern of the photomask on the object to be exposed.
- the lens assembly while moving the lens assembly formed so as to be able to form an equal-magnification erect image of the mask pattern formed on the photomask on the surface of the exposure object in parallel with the surface of the photomask. Exposure can be performed, and even if the mask pattern is an aperiodic pattern, exposure can be performed with high resolution.
- the lens assembly may be smaller than the size of the photomask. Therefore, the size of the lens assembly to be used can be reduced even when the size of the photomask is increased corresponding to the exposure object having a large area, and the component cost can be reduced. Thereby, the manufacturing cost of the apparatus can be reduced.
- the moving distance of the lens assembly can be made shorter than that in which a plurality of unit lens assemblies are arranged in a staggered manner.
- the tact time of the process can be shortened.
- a mask pattern having a size larger than the lens size can be continuously connected and exposed without being interrupted.
- the fourth aspect of the present invention it is possible to form an equal-size erect image of the mask pattern of the photomask on the surface of the exposure object with high accuracy by eliminating the influence of the lens aberration. Therefore, the exposure pattern formation accuracy can be improved.
- overexposure can be prevented even when overexposure is performed to connect exposure patterns. Therefore, the exposure pattern formation accuracy can be further improved.
- the beam diameter can be limited, and the resolving power by the lens group of the lens assembly can be further improved.
- FIG. It is a front view which shows embodiment of the exposure apparatus by this invention. It is a top view of FIG. It is a top view which shows the board
- FIG. 1 is a front view showing an embodiment of an exposure apparatus according to the present invention
- FIG. 2 is a plan view of FIG.
- This exposure apparatus enables exposure of a non-periodic pattern on an object to be exposed having a large area with high resolution, and includes a conveying means 1, a first exposure optical unit 2, and a second exposure optical. Unit 3 is provided.
- the object to be exposed is a substrate for a thin film transistor (hereinafter referred to as “TFT”) of a display device will be described.
- TFT thin film transistor
- FIG. 3 is a plan view of the TFT substrate 4 used in the present invention, in which exposure patterns of a plurality of signal lines and scanning lines intersect with each other in a predetermined cycle in the display area 5 by another exposure apparatus. It is a thing.
- An area 6 surrounded by a broken line in the figure outside the display area 5 is an area for forming a signal side terminal for connecting to a plurality of signal lines and a signal side driving circuit provided outside.
- Reference numeral 7 denotes an area for forming a scanning side terminal for connection to a plurality of scanning lines and a scanning side driving circuit provided outside.
- the transport means 1 is for placing the TFT substrate 4 coated with photosensitive resin on the upper surface of the stage 8 and transporting it in one direction (in the direction of arrow A shown in FIG. 1).
- the stage 8 is moved by a moving mechanism configured in combination.
- a gas outlet and suction port are provided on the surface of the stage 8, and the TFT substrate 4 is transported in a state where it floats on the stage 8 by a predetermined amount by balancing the gas jet output and suction force. May be.
- the transport unit 1 is provided with a position sensor (not shown) for detecting the moving distance of the stage 8.
- a first exposure optical unit 2 is provided above the transport means 1.
- the first exposure optical unit 2 is for exposing the pattern of the signal side terminal to the region 6 of the TFT substrate 4, and includes a light source device 9, a signal terminal photomask 10, and a signal terminal lens assembly.
- a solid 11 and a moving means 12 are provided.
- the light source device 9 irradiates the signal terminal photomask 10 described later with the parallel light of the light source light having a uniform luminance distribution, for example, a light source composed of an ultra-high pressure mercury lamp, a xenon lamp or the like,
- the light source light emitted from the light source is configured to have a uniform luminance distribution, for example, a photo integrator, and a condenser lens that converts the light source light having the uniform luminance distribution into parallel light.
- a signal terminal photomask 10 is provided on the downstream side of the light source light emitted from the light source device 9. As shown in FIG. 4, the signal terminal photomask 10 is formed by forming a signal terminal mask pattern 13 having the same shape as the signal terminal on the transparent substrate surface. It is held on a mask stage (not shown) with the surface facing down. The signal terminal photomask 10 is classified into a positive type and a negative type depending on the type of photosensitive resin used. Here, the case of the positive type will be described. Therefore, the signal terminal mask pattern 13 is formed of an opaque film, and light is transmitted through the outer region of the signal terminal mask pattern 13.
- a signal terminal lens assembly 11 is provided between the signal terminal photomask 10 and the stage 8 of the conveying means 1.
- the lens assembly 11 for signal terminals forms an equal-size erect image of the mask pattern 13 for signal terminals formed on the photomask 10 for signal terminals on the surface of the TFT substrate 4.
- it is formed so as to be movable in a direction parallel to the substrate conveyance direction indicated by arrow A in FIG. 2 (in the direction of arrow B in FIG. 2) by a moving means 12 described later in a plane parallel to the stage 8, as shown in FIG.
- the signal terminal unit lens assemblies 11A, 11B, and 11C are arranged in a line in a direction crossing the moving direction (arrow B direction).
- a plurality of convex lenses (microlenses) 14a to 14h are arranged in the normal direction of the signal terminal photomask 10 as shown in FIG. 6B.
- a plurality of lens rows 16 are arranged by arranging the lens groups 15 configured in the above manner in a direction intersecting the moving direction (arrow B direction) in a plane parallel to the surfaces of the signal terminal photomask 10 and the stage 8. As shown in FIG. 5, each lens group 15 of each lens array 16 is parallel to an axis OO that obliquely intersects the moving direction (arrow B direction) of the signal terminal lens assembly 11.
- the lens rows 16 are formed so as to be aligned with each other by a certain amount in the direction intersecting the direction of the arrow B, and the end portions 11Aa, 11Ba, 11Bb, 11Ca adjacent to each other are formed on the axis O.
- O forms a resected configured in parallel to the one in which and are arranged side by side at a certain arrangement pitch across the entire lens group 15 is a signal terminal for the lens assembly 11 of the lens array 16.
- the signal terminal unit lens assemblies 11A to 11C include a plurality of signal terminal unit lens assemblies 11A to 11C in a direction orthogonal to the moving direction of the signal terminal lens assembly 11 (arrow B direction).
- the lens group 15 provided with a pitch P 1 (e.g. 150 ⁇ m pitch) 3 rows of lens array 16 which are arranged at a pitch P 2 in the direction of movement indicated by the arrow B (e.g. 150 ⁇ m pitch), in the moving direction (direction of arrow B)
- each of the signal terminal unit lens assemblies 11A to 11C has a first, second, and second lens in which a plurality of convex lenses 14 are formed on the front and back surfaces of the transparent substrate 17, respectively.
- the third and fourth lens arrays 18a to 18d are superposed and joined in a state where the optical axes of the corresponding convex lenses 14 are matched, and the intermediate inverted image of the signal terminal mask pattern 13 of the signal terminal photomask 10 is used. Is formed between the second lens array 18b and the third lens array 18c.
- the lens group 15 is composed of eight convex lenses 14a to 14h arranged with their optical axes aligned with each other.
- each convex lens 14 of the lens group 15 receives the principal ray of incident light in order to increase the amount of exposure light that has passed through the signal terminal photomask 10 into the lens group 15.
- This is a field lens that collects light on the surface of the rear convex lens 14b of 18a.
- the rear convex lens 14b of the first lens array 18a and the front convex lens 14c of the second lens array 18b cooperate to generate an image of the signal terminal mask pattern 13 of the signal terminal photomask 10 in the second.
- the rear convex lens 14d of the second lens array 18b is a field lens that serves to make the principal ray of incident light parallel to the optical axis.
- the front convex lens 14e of the third lens array 18c is a field lens that serves to collect the principal ray of incident light on the surface of the rear convex lens 14f of the third lens array 18c.
- the rear convex lens 14f of the third lens array 18c and the front convex lens 14g of the fourth lens array 18d cooperate to form an intermediate inverted image of the signal terminal mask pattern 13 on the surface of the TFT substrate 4.
- the rear convex lens 14h of the fourth lens array 18d is a field lens that serves to make the principal ray of incident light parallel to the optical axis.
- the lens group 15 can form an equal-magnification erect image of the signal terminal mask pattern 13 of the signal terminal photomask 10 on the surface of the TFT substrate 4.
- each of the signal terminal unit lens assemblies 11A to 11C includes a first opening 20 having a predetermined shape adjacent to the surface of the front convex lens 14e of the third lens array 18c.
- the aperture 19 is provided to limit the exposure area by the lens group 15 to the center of the lens. Thereby, it is possible to expose the signal terminal mask pattern 13 of the signal terminal photomask 10 with high resolution without the influence of lens aberration.
- the opening 20 of the first diaphragm 19 is a rectangular opening having four corners 21a, 21b, 21c, and 21d, and the signal terminal lens assembly 11 is moved.
- the area of a portion corresponding to a portion (hereinafter referred to as “overlap portion 22”) overlapping with a part of the opening 20 of the first diaphragm 19 adjacent in the direction (arrow B direction) is the total area of the overlap portion 22.
- a part of the light is shielded so as to be half.
- the shape of the opening 20 of the first diaphragm 19 is a hexagon having a corner on the center line of the lens array 16.
- the area of the opening 20 of the first diaphragm 19 corresponding to the overlap portion 22 is half the total area of the overlap portion 22, and the average exposure amount of the region corresponding to the overlap portion 22 is required. Half of the exposure amount. Therefore, a region corresponding to the overlap portion 22 is subjected to a certain amount of exposure by overlapping exposure of the two lens groups 15 existing ahead of the moving direction (arrow B direction) of the signal terminal lens assembly 11. It will be. Therefore, there is no possibility that the area corresponding to the overlap portion 22 is overexposed.
- FIG. 8A is a plan view showing the lens group 15 existing ahead of the moving direction (arrow B direction) of the signal terminal lens assembly 11.
- FIG. 6B is an explanatory diagram showing exposure at a point O corresponding to the outside of the overlap portion 22 in FIG.
- the point O is limited by the aperture 20 of the first diaphragm 19, is exposed at the exposure from t 1 is started t 2 is completed.
- the point O is exposed to a certain amount of light during the period from t 1 to t 2 and exposure at a certain depth is performed.
- FIG. 8C is an explanatory diagram showing exposure of a point P corresponding to the overlap portion 22.
- the point P is limited by the portion corresponding to the overlapping portion 22 of the opening 20 of the first diaphragm 19, after finishing exposure at t 4 exposed from t 3 is started once, the subsequent first is limited by the portion corresponding to the overlapping portion 22 of the aperture 20 of the diaphragm 19 exposed at t 6 resumes the exposure from t 5 of completed.
- the point P is exposed to a certain amount of light during the period from t 3 to t 4 and t 5 to t 6 , and exposure at a certain depth is performed.
- FIG. 8D is an explanatory diagram showing exposure at a point Q corresponding to the overlap portion 22.
- the point Q is limited by the portion corresponding to the overlap portion 22 of the opening 20 of the first aperture stop 19.
- the subsequent first exposure in the overlap portion 22 is limited by a portion corresponding to resume the exposure from t 9 t 10 of the aperture 20 of the diaphragm 19 is completed.
- the point Q is exposed to a certain amount of light during the period from t 7 to t 8 and t 9 to t 10 , and exposure at a certain depth is performed.
- the shape of the opening 20 of the first diaphragm 19 is not limited to the hexagonal shape, and the shape of the portion corresponding to the overlap portion 22 of the opening 20 is half of the entire area of the overlap portion 22. As long as the portion is shielded from light, it may have any shape such as a trapezoid as shown in FIG.
- each of the signal terminal unit lens assemblies 11A to 11C is close to the surface of the convex lens 14g on the upstream side in the light traveling direction of the fourth lens array 18d.
- a second diaphragm 38 having an elliptical opening corresponding to the opening 20 of the diaphragm 19 is provided to limit the beam diameter of the light passing through the lens group 15.
- each of the signal terminal unit lens assemblies 11A to 11C shields light from the periphery of the front convex lens 14a of the first lens array 18a and is outside the lens formation region sandwiched between two broken lines in FIG. 6A.
- the width w 1 in the same direction of the region before and after the movement direction (in the direction opposite to the arrow A) indicated by the arrow B in the same figure is at least the arrow A in the signal terminal mask pattern 13 formation region of the signal terminal photomask 10. It is formed to be the same as the width W 1 in the direction (see FIG. 4).
- a moving means 12 is provided to move the signal terminal lens assembly 11.
- the moving means 12 moves the signal terminal lens assembly 11 in a direction parallel to the signal terminal photomask 10 and the stage 8 in the direction of arrow B in FIG. is there.
- the second exposure optical unit 3 is provided above the stage 8 and in front of the first exposure optical unit 2 in the substrate transport direction.
- the second exposure optical unit 3 is for exposing the pattern of the scanning side terminal to the region 7 of the TFT substrate 4, and includes a light source device 23, a scanning terminal photomask 24, and a scanning terminal lens assembly.
- a solid body 25 and a moving means 26 are provided.
- the light source device 23 irradiates a scanning terminal photomask 24 described later with parallel light of light source light having a uniform luminance distribution, and is similar to the light source device 9 of the first exposure optical unit 2.
- a light source composed of an ultra-high pressure mercury lamp, a xenon lamp or the like, a luminance distribution of the light source light emitted from the light source, for example, a photo integrator, and a capacitor for converting the light source light with the uniform luminance distribution into parallel light And a lens.
- a scanning terminal photomask 24 is provided on the downstream side of the light source light emitted from the light source device 23. As shown in FIG. 10, the scanning terminal photomask 24 is obtained by forming a scanning terminal mask pattern 27 having the same shape as the scanning terminal on the transparent substrate surface. It is held on a mask stage (not shown) with the surface facing down. The scanning terminal photomask 24 is classified into a positive type and a negative type depending on the type of photosensitive resin used, as in the case of the signal terminal mask pattern 13. Here, the case of the positive type will be described. . Therefore, the scanning terminal mask pattern 27 is formed of an opaque film, and light is transmitted through the outer region of the scanning terminal mask pattern 27.
- a scanning terminal lens assembly 25 is provided between the scanning terminal photomask 24 and the stage 8 of the conveying means 1.
- the scanning terminal lens assembly 25 forms an equal-magnification erect image of the scanning terminal mask pattern 27 formed on the scanning terminal photomask 24 on the surface of the TFT substrate 4. 2 is formed so as to be movable in the direction parallel to the substrate conveyance direction indicated by arrow A in FIG. 2 (in the direction of arrow C in FIG. 2) by a moving means 26 to be described later.
- a lens group 29 configured by arranging a plurality of convex lenses (microlenses) 28a to 28h as shown in FIG. 11B in the normal direction is arranged in a plane parallel to the surface of the scanning terminal photomask 24 and the stage 8.
- the C are those having in a row in the crossing direction with the moving direction (arrow C direction) (see FIG. 2).
- each lens group 29 of each lens array 30 moves in the moving direction of the scanning terminal lens assembly 25.
- Each lens array 30 is formed by being shifted by a certain amount in the direction intersecting the arrow C so as to be arranged in parallel to an axis that obliquely intersects (in the direction of the arrow C), and adjacent end portions 25Aa, 25Ba, 25Bb, and 25Ca (see FIG. 2) are cut away in parallel to the axis, and the lens group 29 of each lens array 30 is arranged at a constant pitch over the entire scanning terminal lens assembly 25. They are arranged side by side.
- each of the scanning terminal lens assemblies 25A to 25C corresponds to the moving direction of the scanning terminal lens assembly 25 (the direction of arrow C shown in FIG. 11).
- the lens rows 30 in which a plurality of lens groups 29 are arranged at a pitch P 3 (for example, 150 ⁇ m pitch) in the direction intersecting with each other are provided at three pitches P 4 (for example, 150 ⁇ m pitch) in the movement direction indicated by the arrow C, and the movement direction
- a plurality of lens groups 29 are arranged in the arrangement direction of the lens groups 29 so that one of the lens groups 30 adjacent to each other so that a part of each lens group 29 of each lens array 30 overlaps when viewed in the direction of arrow C.
- each of the scanning terminal lens assemblies 25A to 25C includes first, second, and third lenses in which a plurality of convex lenses 28 are formed corresponding to each other on the front and back surfaces of a transparent substrate.
- the fourth lens arrays 31a to 31d are superposed and joined in a state where the optical axes of the corresponding convex lenses 28 are matched, and an intermediate inverted image of the scanning terminal mask pattern 27 of the scanning terminal photomask 24 is obtained.
- the second lens array 31b and the third lens array 31c are configured to form an image.
- the lens group 29 is composed of eight convex lenses 28a to 28h arranged with their optical axes aligned with each other.
- the configuration of the scanning terminal lens assembly 25 is the same as that of the signal terminal unit lens assemblies 11A to 11C of the first exposure optical unit 2, and therefore, here, the specific configuration of the lens group 29 and Description of the function of each convex lens 28 is omitted.
- reference numeral 32 denotes a first diaphragm
- reference numeral 33 denotes an opening of the first diaphragm 32
- reference numeral 34 denotes a second diaphragm.
- each of the scanning terminal lens assemblies 25A to 25C shields light from the periphery of the front convex lens 28a of the first lens array 31a and is outside the lens formation region sandwiched between two broken lines in FIG.
- the width W 2 in the same direction of the region before and after the moving direction indicated by the arrow C in the figure is at least the width W 2 in the direction orthogonal to the arrow A of the scanning terminal mask pattern 27 formation region of the scanning terminal photomask 24 ( (See FIG. 10).
- the light passing through the scanning terminal photomask 24 can be completely blocked before the scanning terminal lens assembly 25 starts moving and after the movement is completed.
- a moving means 26 is provided so that the scanning terminal lens assembly 25 can be moved.
- the moving means 26 moves the scanning terminal lens assembly 25 in a direction parallel to the scanning terminal photomask 24 and the stage 8 in the direction of the arrow C in FIG. 2, for example, by an electromagnetic actuator or an electric stage. is there.
- assembly adjustment is performed by an assembly adjustment device for a lens assembly provided separately so that the surface of each unit lens assembly is parallel to the substrate surface within an allowable value.
- the specific adjustment will be described with reference to FIG.
- the assembly adjustment of the signal terminal lens assembly 11 will be described, and the assembly adjustment of the scanning terminal lens assembly 25 may be performed in the same manner, and the description thereof will be omitted.
- the reference mark 35a is picked up by the microscope 37 through any one of the lens groups 15 of the signal terminal unit lens assembly 11A, and the signal terminal lens assembly 11 is moved in the horizontal plane so that the field of view of the microscope 37 is centered.
- the reference mark 35a is positioned at the position.
- the microscope 37 is horizontally moved in the alignment direction of the reference marks 35a and 35b by the same dimension P as the arrangement pitch P of the reference marks 35a and 35b, and the microscope 37 is moved through the lens group 15 of the signal terminal unit lens assembly 11B.
- the th reference mark 35b is observed. Then, the signal terminal unit lens assembly 11B is moved in the direction of arrow D shown in FIG. 12, for example, so that the second reference mark 35b is positioned at the center of the field of view of the microscope 37, and then fixed. Thereafter, the signal terminal unit lens assembly 11C is similarly adjusted. Thus, the lens group 15 of the signal terminals lens assembly 11 will be aligned in a straight line at the direction array pitch P 1 that intersects the movement direction indicated by the arrow B in FIG.
- the signal terminal lens assembly 11 and the scanning terminal lens assembly 25 assembled and adjusted as described above are set in the first exposure optical unit 2 and the second exposure optical unit 3, respectively. Thereby, exposure preparation is completed.
- the conveying means 1 is driven. Then, the stage 8 is moved at a constant speed in the direction of arrow A in FIG. 1, and the TFT substrate 4 is conveyed in the same direction. At this time, the light sources of the first and second exposure optical units 2 and 3 are turned on.
- a reference mark (not shown) provided in advance on the TFT substrate 4 is detected by an imaging means (not shown) provided at a fixed distance from the first exposure optical unit 2 on the opposite side to the substrate transport direction.
- the moving distance of the stage 8 is measured by the position sensor with reference to the position of the stage 8 at the detection time of the reference mark. Then, when the stage 8 moves by a preset distance and the signal side terminal formation region 6 of the TFT substrate 4 reaches just below the signal terminal photomask 10 of the first exposure optical unit 2, the stage 8 moves. Stopped.
- the moving means 12 of the first exposure optical unit 2 is driven to start the movement of the signal terminal lens assembly 11 in the arrow B direction in FIG. 1, and a plurality of lens groups continuously moving in the same direction. 15 (see FIG. 5), an equal-size erect image of the signal terminal mask pattern 13 of the signal terminal photomask 10 shown in FIG. 4 is projected onto the surface of the TFT substrate 4, and the exposure pattern of the signal side terminals is the TFT substrate. 4 in the signal side terminal formation region 6.
- the area corresponding to the overlap portion 22 in the exposure area limited by the opening 20 of the first diaphragm 19 of the lens group 15 is for the signal terminal indicated by the arrow B in FIG.
- the two lens groups 15 existing ahead of the moving direction of the lens assembly 11 are overexposed.
- the exposure pattern of the signal side terminal is continuously connected without being interrupted.
- the portion corresponding to the overlap portion 22 in the opening 20 of the first diaphragm 19 is formed so that the area thereof is half of the total area of the overlap portion 22.
- the moving means 12 is stopped.
- the stage 8 starts to move and the conveyance of the TFT substrate 4 is resumed.
- the movement of the stage 8 is stopped. Is done.
- the moving means 26 of the second exposure optical unit 3 is driven to start the movement of the scanning terminal lens assembly 25 in the direction of arrow C in FIG. 2, and a plurality of lenses continuously moving in the same direction.
- the group 29 projects an equal-magnification erect image of the scanning terminal mask pattern 27 of the scanning terminal photomask 24 shown in FIG. 10 onto the surface of the TFT substrate 4, and the scanning terminal exposure pattern is for TFT. It is formed in the scanning side terminal formation region 7 of the substrate 4.
- the region corresponding to the overlap portion in the exposure region limited by the opening 33 of the first diaphragm 32 of the lens group 29 is the lens assembly for signal terminals of the first exposure optical unit 2 shown in FIG.
- the two exposures are carried out by the two lens groups 29 existing ahead of the moving direction of the scanning terminal lens assembly 25 indicated by the arrow C in FIG.
- the exposure pattern of the scanning terminal is continuously connected without being interrupted.
- the portion of the opening 33 of the first diaphragm 32 corresponding to the overlap portion has an area that is half the total area of the overlap portion, like the first diaphragm 19 of the first exposure optical unit 2. Therefore, exposure with a certain depth is performed by the overexposure of the two lens groups 29, and there is no fear of overexposure.
- the moving means 26 stops. Then, all the exposure to the TFT substrate 4 is completed. Thereafter, the movement of the stage 8 is resumed and the TFT substrate 4 is discharged to the outside.
- the signal terminal lens assembly 11 and the scanning terminal lens assembly 25 are each arranged with a plurality of signal terminal unit lens assemblies 11A to 11C and scanning terminal unit lens assemblies 25A to 25C arranged in a line. Therefore, the moving distance L 1 of each lens assembly 11, 25 shown in FIG. 13 is the width W 1 in the direction of arrow B of the signal terminal mask pattern 13 formation region of the signal terminal photomask 10. scanning the distance obtained by adding the arrow B direction of width of the lens forming region of the signal terminals lens assembly 11, and the width W 2 of the arrow C direction of the mask pattern 27 forming region for the scanning pin of the scanning terminals photomask 24 The distance is the sum of the width of the lens formation region of the terminal lens assembly 25 in the direction of arrow C.
- the signal terminal lens assembly 11 and the scanning terminal lens assembly 25 have a configuration in which a plurality of signal terminal unit lens assemblies 11A to 11C and scanning terminal unit lens assemblies 25A to 25C are alternately arranged. It may have. In this case, the moving distance L 2 of each lens assembly 11, 25 shown in FIG.
- FIG. 15A shows the signal terminal photomask 10 and FIG. 15B shows the scanning terminal photomask 24.
- the present invention is not limited to this, and a first distance for forming the exposure pattern of the signal lines and the scanning lines on the TFT substrate 4 with a certain distance from the first exposure optical unit 2 on the opposite side to the substrate transport direction.
- Three exposure optical units may be provided.
- the third exposure optical unit includes two mask patterns composed of two types of mask patterns having different required resolving powers such as electrode wirings of thin film transistors, signal lines, and scanning lines on a light shielding film formed on one surface of the transparent substrate.
- a mask pattern group is formed ahead of the direction of transport of the TFT substrate 4, and the other surface corresponds to the mask pattern of the electrode wiring of the thin film transistor having a high required resolving power among the two types of mask patterns having different required resolving powers.
- a photomask formed with a microlens for reducing and projecting the mask pattern onto the TFT substrate 4 is arranged so that the microlens side is on the TFT substrate 4 side, and the light source light is fixed to the photomask.
- Two kinds of mask patterns of the photomask are applied to the TFT substrate 4 which is intermittently irradiated at time intervals and is transported at a constant speed in the direction of arrow A in FIG. Good those configured to expose the emissions at a constant period.
- the specific configuration example of the photomask used here is that the mask pattern group composed of the electrode wiring mask patterns of the thin film transistor having a high required resolving power is in the direction substantially orthogonal to the transport direction (arrow A direction) of the TFT substrate 4.
- a plurality of mask pattern rows formed by arranging the mask patterns in a straight line at a predetermined pitch, and a subsequent mask is formed between the plurality of exposure patterns formed by the mask pattern row positioned on the leading side in the transport direction of the TFT substrate 4 It is preferable that the subsequent mask pattern rows are formed so as to be shifted by a fixed dimension in the arrangement direction of the plurality of mask patterns so as to be complemented by a plurality of exposure patterns formed by the pattern rows.
- the present invention is not limited to this, and the TFT substrate 4 is exposed by moving the step in the two-dimensional plane. Also good.
- the object to be exposed is the TFT substrate 4
- the present invention is not limited to this, and the object to be exposed is intended to form an aperiodic pattern. Anything may be used.
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Abstract
Description
図8(a)は、信号端子用レンズ組立体11の移動方向(矢印B方向)に先後して存在するレンズ群15を示す平面図である。また、同図(b)は、同図(a)においてオーバーラップ部22外に対応する点Oの露光を示す説明図である。この場合、点Oは、第1の絞り19の開口20により制限されて、t1から露光が開始されt2で露光が完了する。これにより、点Oは上記t1~t2の期間において一定光量の光に曝され、一定深さの露光が行われることになる。
先ず、別に設けたレンズ組立体の組立調整装置により、各単位レンズ組立体の面が基板面に対して許容値内で平行となるように組立調整がされる。具体的なその調整を、図12を参照して説明する。ここでは、信号端子用レンズ組立体11の組立調整について説明し、走査端子用レンズ組立体25の組立調整については、同様にして行えばよいので説明を省略する。
8…ステージ
10…信号端子用フォトマスク
11…信号端子用レンズ組立体
11A~11C…信号端子用単位レンズ組立体
11Aa,11Ba,11Bb,11Ca…信号端子用単位レンズ組立体の隣接端部
13…信号端子用マスクパターン
14,14a~14h,28,28a~28h…凸レンズ
15,29…レンズ群
16,30…レンズ列
17a,31a…第1のレンズアレイ
17b,31b…第2のレンズアレイ
17c,31c…第3のレンズアレイ
17d,31d…第4のレンズアレイ
19,32…第1の絞り
20,33…開口
22…オーバーラップ部(隣接する第1の絞りの開口と重なる部分)
23,34…第2の絞り
24…走査端子用フォトマスク
25…走査端子用レンズ組立体
25A~25C…走査端子用単位レンズ組立体
25Aa,15Ba,15Bb,25Ca…走査端子用単位レンズ組立体の隣接端部
27…走査端子用マスクパターン
Claims (7)
- 被露光体を載置するステージとマスクパターンを形成したフォトマスクとの間にて前記被露光体の面及び前記フォトマスクの面に平行な面内を移動可能に形成され、前記フォトマスクのマスクパターンの等倍正立像を前記被露光体表面に結像可能に構成した複数のレンズ群を前記移動方向と交差する方向に一定の配列ピッチで並べて複数のレンズ列を形成した複数の単位レンズ組立体を前記移動方向と交差方向に一列に並べて有するレンズ組立体を備えて構成され、
前記各単位レンズ組立体は、前記各レンズ列の各レンズ群が前記レンズ組立体の移動方向に対して斜めに交差する軸線に平行に並ぶように前記各レンズ列を前記移動方向と交差する方向に相互に一定量だけシフトさせて形成すると共に、互いに隣接する端部を前記軸線に平行に切除した構成を成し、且つ前記各レンズ列のレンズ群が前記レンズ組立体の全体に亘って一定の配列ピッチで並ぶように配置されたことを特徴とする露光装置。 - 前記各単位レンズ組立体は、前記レンズ組立体の移動方向に見て前記各レンズ群の一部が重なるように各レンズ列を前記移動方向と交差する方向に相互にシフトさせたことを特徴とする請求項1記載の露光装置。
- 前記各単位レンズ組立体は、透明な基板の表裏面に互いに対応させて複数の凸レンズを形成した第1、第2、第3及び第4のレンズアレイを対応する各凸レンズの光軸を合致させて重ね合わせると共に、前記フォトマスクのマスクパターンの中間倒立像を前記第2のレンズアレイと前記第3のレンズアレイとの間に結像させるように構成されたものであることを特徴とする請求項1記載の露光装置。
- 前記各単位レンズ組立体は、前記第3のレンズアレイの光の進行方向上流側に位置する凸レンズの表面に近接して所定形状の開口を有する第1の絞りを設け、レンズ群による露光領域をレンズの中央部に制限したことを特徴とする請求項3記載の露光装置。
- 前記第1の絞りの開口は、平面視矩形状の開口において、前記レンズ組立体の移動方向に見て隣接する第1の絞りの開口の一部と重なる部分の面積が前記重なり部全体の面積の半分となるようにその一部を遮光した形状を成していることを特徴とする請求項4記載の露光装置。
- 前記各単位レンズ組立体は、前記第4のレンズアレイの光の進行方向上流側のレンズ表面に近接して光束径を制限する第2の絞りを設けたことを特徴とする請求項3記載の露光装置。
- 前記ステージは、前記被露光体を一方向に搬送可能にされ、
前記レンズ組立体は、前記ステージの移動が一時的に停止された状態において移動する、
ことを特徴とする請求項1~6のいずれか1項に記載の露光装置。
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US10787424B2 (en) | 2014-05-21 | 2020-09-29 | New York University | Oxopiperazine helix mimetics for control of Hypoxia-Inducible gene expression |
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JP5515120B2 (ja) | 2010-10-29 | 2014-06-11 | 株式会社ブイ・テクノロジー | マイクロレンズアレイを使用したスキャン露光装置 |
JP5470236B2 (ja) * | 2010-12-22 | 2014-04-16 | 東京エレクトロン株式会社 | 局所露光方法及び局所露光装置 |
JP6286813B2 (ja) * | 2012-03-26 | 2018-03-07 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
WO2015022125A1 (en) * | 2013-08-16 | 2015-02-19 | Asml Netherlands B.V. | Lithographic apparatus, programmable patterning device and lithographic method |
KR102547257B1 (ko) * | 2017-07-25 | 2023-06-23 | 도판 인사츠 가부시키가이샤 | 노광 장치 및 노광 방법 |
WO2021035714A1 (zh) * | 2019-08-30 | 2021-03-04 | 京东方科技集团股份有限公司 | 纹路图像获取装置、显示装置及准直部件 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09244255A (ja) * | 1996-03-13 | 1997-09-19 | Nikon Corp | 液晶用露光装置 |
JP2001166497A (ja) * | 1999-10-01 | 2001-06-22 | Nikon Corp | 露光方法及び露光装置 |
JP2008076709A (ja) * | 2006-09-21 | 2008-04-03 | V Technology Co Ltd | 露光装置 |
JP2009058666A (ja) * | 2007-08-30 | 2009-03-19 | V Technology Co Ltd | 露光装置 |
JP2009277900A (ja) * | 2008-05-15 | 2009-11-26 | V Technology Co Ltd | 露光装置及びフォトマスク |
JP2010097129A (ja) * | 2008-10-20 | 2010-04-30 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
JP2011118155A (ja) * | 2009-12-03 | 2011-06-16 | V Technology Co Ltd | 露光装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100503767B1 (ko) * | 2003-06-27 | 2005-07-26 | 학교법인연세대학교 | 2차원 광변조 미세 개구 어레이 장치 및 이를 이용한 고속미세패턴 기록시스템 |
JP4684584B2 (ja) * | 2003-07-23 | 2011-05-18 | キヤノン株式会社 | マスク及びその製造方法、並びに、露光方法 |
US20090009736A1 (en) * | 2003-10-27 | 2009-01-08 | Koninklijke Philips Electronics N.V. | Apparatus for and Method of Forming Optical Images |
JP2006243543A (ja) * | 2005-03-04 | 2006-09-14 | Fuji Photo Film Co Ltd | 永久パターン形成方法 |
JP2006284842A (ja) * | 2005-03-31 | 2006-10-19 | Fuji Photo Film Co Ltd | パターン形成方法 |
JP4543069B2 (ja) * | 2007-09-26 | 2010-09-15 | 日立ビアメカニクス株式会社 | マスクレス露光装置 |
JP5258051B2 (ja) | 2009-04-03 | 2013-08-07 | 株式会社ブイ・テクノロジー | 露光方法及び露光装置 |
JP5515120B2 (ja) | 2010-10-29 | 2014-06-11 | 株式会社ブイ・テクノロジー | マイクロレンズアレイを使用したスキャン露光装置 |
-
2010
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09244255A (ja) * | 1996-03-13 | 1997-09-19 | Nikon Corp | 液晶用露光装置 |
JP2001166497A (ja) * | 1999-10-01 | 2001-06-22 | Nikon Corp | 露光方法及び露光装置 |
JP2008076709A (ja) * | 2006-09-21 | 2008-04-03 | V Technology Co Ltd | 露光装置 |
JP2009058666A (ja) * | 2007-08-30 | 2009-03-19 | V Technology Co Ltd | 露光装置 |
JP2009277900A (ja) * | 2008-05-15 | 2009-11-26 | V Technology Co Ltd | 露光装置及びフォトマスク |
JP2010097129A (ja) * | 2008-10-20 | 2010-04-30 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
JP2011118155A (ja) * | 2009-12-03 | 2011-06-16 | V Technology Co Ltd | 露光装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10787424B2 (en) | 2014-05-21 | 2020-09-29 | New York University | Oxopiperazine helix mimetics for control of Hypoxia-Inducible gene expression |
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KR20130098989A (ko) | 2013-09-05 |
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KR101787155B1 (ko) | 2017-10-18 |
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