WO2011158449A1

WO2011158449A1 - Connection material, semiconductor device, and method for manufacturing same

Info

Publication number: WO2011158449A1
Application number: PCT/JP2011/003071
Authority: WO
Inventors: 靖池田
Original assignee: 株式会社日立製作所
Priority date: 2010-06-16
Filing date: 2011-06-01
Publication date: 2011-12-22
Also published as: JP2012000629A

Abstract

In a lead-free connection material used in a semiconductor device including a power module and the like, when being exposed to a temperature higher than a normally used temperature range, there has been a case in which the stress relaxation function thereof is degraded. To solve this problem, the connection material has a Zn-based layer formed in a region including the most surficial layer and a plurality of floating island-like Al-based phases (3) formed in the Zn-based layer. Two members (1, 2) are connected by the connection material, thereby preventing the wettability and the heat resistance from being degraded by Al oxide and relaxing stress during connection by the Al-based phases (3). In addition, even if the Al-based phases (3) are hardened during use, the flexibility is ensured by a Zn-Al alloy layer (4), so that it is possible to prevent the stress relaxation function of the connection material from being degraded.

Description

Connection material, semiconductor device, and manufacturing method thereof

The present invention relates to a connection technique using a lead-free connection material that provides good wettability, excellent heat resistance, and high reliability.

Demand for power modules is increasing in recent years because energy saving is possible by driving an inverter. In addition, not only home appliances but also application destinations are spreading to high power control of hybrid and electric vehicles and power generation equipment such as wind power generation. Along with this, the practical application of SiC and GaN semiconductors, which can operate even when the device is heated to a high current by passing a large current compared to conventional Si semiconductors, is being studied. Therefore, connection materials suitable for die bonding of SiC and GaN semiconductors are required. SiC and GaN semiconductors may be used at high temperatures of 200 ° C or higher, but at present there is no other general-purpose connection material to connect these devices, but high lead solder uses lead. There is a problem that the environmental load is very large because it contains 85 mass% or more. In addition, since the melting point of high lead solder is about 300 ° C., the interface reaction cannot be suppressed at a temperature of 250 ° C. or higher, and voids or the like are remarkably generated and the connection cannot be maintained. Therefore, it is necessary to develop a high heat resistance lead-free connection technology having heat resistance higher than that of high lead solder. Candidates for high heat-resistant lead-free connection materials include fired Ag paste, Au solder having a melting point of 300 ° C. or higher, and Zn solder. However, calcined Ag paste has problems such as high cost and poor workability such as a supply method compared to conventional solder. In addition, in the case of Au-based solder, it is more expensive than a fired Ag paste and is difficult to use for general purposes. In the case of Zn-based solder, Zn-based solder not containing Al has high reactivity with the member, and the interface reaction is remarkably advanced at a temperature of 150 ° C. or higher, and the connection cannot be maintained. In addition, in the case of Zn—Al solder, there is a problem that an Al oxide film is formed around the solder so that the material to be connected does not get wet. As a means for avoiding the inhibition of wetting by the Al oxide film of the connection material, there is Patent Document 1. In patent document 1, in order to improve the wettability of a Zn-Al alloy, Zn is clad on the Al foil surface. When clad, Al is deformed greatly by a process such as rolling, and the Al oxide film on the surface is broken, so that the exposed new surfaces are connected to each other. Since the surface of the clad material does not have an Al oxide film that impedes wetting, and the Al oxide film inside the material maintains a torn state, it is possible to ensure good wetting during connection.

JP 2008-126272 A

However, even if the maximum temperature of the usage environment is assumed to be lower than 250 ° C., it may temporarily exceed 250 ° C. depending on the operation status of the apparatus. In order to ensure the following, the following were not considered. In the case of Patent Document 1, as shown in FIG. 1, after connecting the semiconductor element 1 and the support member 2 via the Zn—Al layer 4, the soft Al layer 3 is left to give stress to the connection portion. . FIG. 2 shows the relationship between the holding time at 250 ° C. and the Vickers hardness of the Al layer. 0h indicates the hardness after connection. At this time, the Al layer is softer than the Zn—Al alloy layer responsible for connection indicated by the dotted line, and has a stress buffering function. However, after holding at 250 ° C. for 250 hours, it becomes harder than the Zn—Al alloy layer responsible for connection and the stress buffering ability is lost. This is because Zn diffuses into the Al layer at a high temperature and the Al layer is solid-solution strengthened. That is, even if temporarily exposed to a temperature of 250 ° C. or higher, the stress buffering function in a usage environment below 250 ° C. is also reduced.

The present invention has been made to solve the above-described problems, and aims to provide a highly reliable connection material that can ensure wettability, has high heat resistance, and has a stress buffering function.

In order to solve the above problems, the outermost surface used for connection was made a Zn-based layer, and the Al layer, which was a large lump in Patent Document 1, was divided into a plurality of small Al phases. As a result, the stress buffer function of Al during connection is slightly reduced, but the deterioration of the stress buffer function of the connection material after Zn enters and Al hardens can be suppressed, and reliability during actual use can be ensured. I did it.

According to the present invention, it is possible to obtain a highly reliable connection material that can ensure wettability, has high heat resistance, and can buffer both thermal stress during connection and thermal stress during use.

It is sectional drawing of the semiconductor element connection part concerning a prior art. It is a figure which shows the relationship between 250 degreeC holding time, and the hardness of the Al layer adjacent to a Zn-Al layer and a Zn-Al layer. It is sectional drawing of a semiconductor element connection part. It is sectional drawing of the connection material concerning one Example of this invention. It is sectional drawing of the semiconductor device concerning one Example of this invention. It is sectional drawing at the time of connecting with the connection material using Ni, Cu, Ag etc. instead of Al of connection material. It is an Al-Zn binary system phase diagram. It is sectional drawing for demonstrating the preparation method of the connection material concerning one Example of this invention. It is sectional drawing of the swelling produced by heating the connection material with a low workability. It is sectional drawing of the power semiconductor module connected with the connection material concerning one Example of this invention. It is the figure which showed the cross section of the connection interface when connecting a Ni plating member with the connection material concerning one Example of this invention. It is sectional drawing of a connection interface when connecting a Ni plating member with Pb-5Sn concerning a comparative example, and hold | maintaining at 250 degreeC for 1000 hours. 7 is a table showing connection materials and verification results in Examples 1 to 17 and Comparative Examples 1 to 5. It is a photograph of an example of a connection material.

Embodiments of the present invention will be described with reference to the drawings.

FIG. 4 is a cross-sectional view of a connection material according to an embodiment of the present invention. The connecting material has a first surface on the upper side of the drawing and a second surface on the lower side of the drawing for connecting the members. The Zn-based layer 5 occupying most forms a first surface and a second surface, and a plurality of Al-based phase 3 grains are scattered in the form of floating islands therebetween. At the point 10, the Zn-based layer 5 extends from the first surface to the second surface. At the point 11, the surface is the Zn-based layer 5, but has the Al-based phase 3 therebetween.

FIG. 8 is a diagram showing a method for manufacturing a connection material. The Al phase 3 and the Zn layer 4 are deformed by sandwiching and rolling (cladding) a plurality of metal pieces (or powders) of the Al phase 3 between the first and second Zn layers 5. Then, the oxide film formed on each surface is broken, and the new surfaces can be metal-bonded. Since the Al-based phase 3 is a metal piece, it is divided into a plurality and distributed on the floating island in the Zn layer 4, and the two Zn-based layers 4 are directly joined. As rolling, cold rolling or hot rolling can be used, and otherwise, it can also be produced by pressure forming.

In the semiconductor device of FIG. 5, the bonding material is melted and solidified to connect the semiconductor element 1 and the substrate 2. The Al phase and the Zn-Al layer 5 are distributed on the floating island. The connection is performed by a reflow process by placing a connecting material between the semiconductor element 1 and the substrate 2. When heating is performed in the reflow process, the Zn-based layer 4 is melted, and when cooled, it is solidified to connect the semiconductor element 1 and the substrate. At this time, although the Al-based phase 3 remains hardened, a part of the Al-based phase 3 is dissolved into the Zn-based layer 5 to form the Zn-Al-based alloy layer 4.

Explain the effects. In this embodiment, the outermost layer of the connection material is the Zn-based layer 5 before connection, and is not Al, so it is not covered with the Al oxide film. Therefore, inhibition of wetting by the oxide film does not occur, and good wetting can be obtained at the time of connection. The Zn-based layer 5 desirably has a Zn content of 90 to 100 mass% and an Al content of less than 0.01 mass%.

After connection, the Al phase 3 partially remains as shown in FIG. At the time of connection, the Zn—Al-based alloy layer 4 is solidified at its freezing point when the temperature is lowered from the heated and melted state, and the semiconductor element 1 and the substrate 2 are connected at that time. At temperatures above the freezing point, the connection material is in a molten state, so no thermal stress problem occurs. However, when the temperature is further lowered from the freezing point to room temperature, a large thermal stress is applied to the connection material that is solidified by solidity due to the difference in thermal expansion coefficient between the semiconductor element 1 and the substrate 2. In this embodiment, since the Al-based phase 3 that is relatively soft is present in the connecting material, the Al-based phase 3 absorbs the thermal stress at this time, and the influence of the thermal stress is greater than when there is no Al-based phase 3. Get smaller.

As described above, the Al-based phase 3 has a problem when it is exposed to a high temperature of 250 ° C. or higher when used after connection, Zn enters, hardens, and becomes harder than the Zn-Al-based layer 5. In the present embodiment, the Al-based phase 3 to be cured becomes a floating island-like portion, and each volume is small. Therefore, even if the Al-based phase 3 is cured, the entire connecting material is not cured. On the other hand, when the whole layer is large lump Al like patent document 1, if the Al layer hardens, the flexibility of the whole connection material will fall remarkably. Therefore, in the present embodiment, curing of the connection material can be suppressed. Still, when the Al phase 3 is cured at a temperature of 250 ° C or higher, the stress buffer function of the connecting material as a whole is lowered. However, the temperature during use is about the same as when the connecting material is melted at around 400 ° C. Because it is not hot, it can withstand it sufficiently. Therefore, high reliability can be obtained under a service temperature up to about 250 ° C., which is commonly used.

Also, as shown in FIG. 4, the connection material has a plurality of floating island-like Al-based phases 3, which exist as a solid even when connected. Therefore, the Al-based phase 3 functions as a spacer that suppresses the inclination of the connecting portion, and the semiconductor element 1 can be prevented from being inclined and connected as shown in FIG. When the inclination occurs, stress concentrates on the thinly crushed connection portion, so that the destruction proceeds faster than in the case where there is no inclination. When a power semiconductor is used at a high temperature, the temperature change during use is large and the thermal shock becomes large. Therefore, it is important to reduce the inclination of the connecting portion to eliminate the stress concentration portion. As shown in FIG. 1, when Al remains, since the Al layer 3 functions as a tilt-preventing spacer, the connecting portion can be kept at a small or small inclination.

In order to prevent Al from hardening, it is also possible to completely react the Al layer at the time of connection to make all the connection parts a Zn-Al alloy. In this case, it is harder than the connection in which the Al layer remains before holding, but even if it is held at a temperature of 250 ° C. or higher, the hardening does not proceed greatly from before holding.

If instead of Al-based phase 3, floating island-like Cu, Ag, Ni, etc. 6 are combined with Zn-based layer 4, as shown in FIG. 6, it reacts remarkably with Zn and is hard and brittle in the connection part. Since the intermetallic compound 7 is formed, there is a risk that the stress buffering ability is reduced and the reliability is impaired. When the connection material is formed by the combination of the Zn-based layer 4 and the Al-based phase 3, Zn diffuses in Al and only strengthens by solid solution, and does not form a brittle intermetallic compound, so that brittle fracture does not occur.

In addition, the presence of the Al-based phase 3 causes Al to diffuse from the Al-based phase 3 via the liquid phase melted at the time of connection, and at the connection interface with the object to be connected or the metallized layer formed on the surface thereof. It is possible to generate an intermetallic compound (a Cu-Al compound for a Cu member and a Ni-Al compound for a Ni member) containing Al as a main component (element having the largest content). Since these intermetallic compounds grow slowly at high temperatures compared to intermetallic compounds containing Zn as a main component, good connection can be maintained.

¡Al contained in the Zn-based layer 5 before connection is preferably less than 0.01 mass%. With this content, the amount of the Al oxide film on the surface of the connecting material is not too much, and good wetting can be obtained.

It is desirable that the Al content of the Al phase 3 before connection is 99 to 100 mass%.

Generally, the closer the purity of Al is to 100 mass%, the softer it becomes and it becomes easier to obtain a stress buffering function. On the other hand, when the Al purity is 99 mass% or more, the hardness decreases and the 0.2% yield strength decreases, so that a sufficient stress buffering function can be obtained during cooling in the connection process. The 0.2% proof stress at this time is desirably 30 N / mm ² or less.

Moreover, the average diameter of the Al phase 3 before connection is preferably 50 μm or more. Since the melting point of the connecting material is about 380 ° C., the connection is made at around 400 ° C. When the average diameter is 50μm or more, Zn diffuses throughout the Al phase 3 due to heating at the time of connection, making it difficult to strengthen the solid solution, it is possible to sufficiently buffer the thermal stress due to cooling in the connection process, and prevent chip cracks from occurring be able to.

It is desirable that the Al phase 3 part with respect to the connection material before connection is higher than 6 mass% and lower than 25 mass%.

Fig. 7 shows the Al-Zn binary phase diagram. Since the Zn-Al eutectic composition is 6 mass% Al, if the Al phase 3 part is 6 mass% or more, the Al phase 3 is not completely dissolved at the time of connection, so use the Al phase 3 part as a spacer. can do. In addition, when the Al phase 3 part is 1 mass% or more, an intermetallic compound containing Al as a main component is formed at the interface of the connection part enough to develop heat resistance during connection, and it is connected due to a shortage of intermetallic compound. It can be prevented from being liberated from the interface compound. In addition, when the Al-based alloy portion is less than 25 mass%, 50% or more of the connection portion is cured at 250 ° C. or less, so that the stress can be sufficiently buffered.

As for the connection material before connection, the Zn-based layer 5 and the Al-based phase 3 are connected to each other at 80% or more around the Al-based phase 3 covered with the Zn-based layer 5 without the Al oxide film interposed therebetween. It is desirable.

When the Zn-based layer 5 and the Al-based phase 3 are connected via an Al oxide, the Al oxide film is fragile, and becomes a starting point of peeling when a thermal shock or the like occurs. When less than 20% of the circumference of the Al-based alloy is covered with an Al oxide film, the connection reliability of the connection portion can be maintained even if the occurrence of delamination increases.

As a manufacturing method of the connecting material, a plurality of Al-based phase 3 metal pieces are sandwiched between the Zn-based layers 5 and rolled to connect the Zn-based layers 4 and between the Zn-based layers 4 and the Al-based phases 3. At this time, it is desirable that the degree of rolling is 90% or more. When the working degree of rolling is 90% or more, there is little possibility that the unconnected interface increases due to small deformation and a large remaining area of the oxide film at the connection interface. In addition, it is possible to prevent the occurrence of a swell 101 at the interface of the unconnected portion and a defective connection defect such as a void after the semiconductor element is connected.

As the rolling, it is desirable to sandwich the Al-based phase 3 powder between the two Zn-based layers 4 and perform hot rolling.

By sandwiching the Al-based powder in the Zn-based layer and performing cold rolling, the Al-based powder and the Zn-based layer are deformed and the oxide film formed on the surface of each member is broken, and the new surfaces can be metal-bonded. . In hot rolling, compared to cold rolling, diffusion is fast at high temperatures, so that the new surfaces can be easily connected. Therefore, the workability of rolling can be easily increased to 90% or more, and a good connection between members can be achieved.

In the present embodiment, the connection material connects the semiconductor element 1 and the substrate 2, but is not limited to this, and any connection material may be used as long as it connects two or more members. Or electrodes may be connected, or electrodes may be connected together.

Note that the connection material according to the present invention and Patent Document 1 is formed on a ribbon-like connection material 201 as shown in the photograph of FIG.

(Example 1-17)
Hereinafter, an embodiment in which the present invention is applied to a power semiconductor module will be described with reference to FIG.

From the Zn-based layer and the Al-based gold phase shown in FIG. 13 on a 40 mm × 20 mm ceramic substrate 9 in which a Cu wiring is brazed on the upper surface of silicon nitride, a Cu plate is brazed on the lower surface, and Ni plating is applied to the Cu plate surface. A 10 mm x 10 mm semiconductor element 1 with Ti / Ni / Au metallization is laminated on it, and a weight is placed on the element, and the connection is made in an N ₂ atmosphere at 400 ° C for 5 min. went. Each of the connection materials contains a large number of Al-based phases in a floating state in the Zn-based layer, and the proportion of the Al-based phase and the thickness of the connection material are different. The power semiconductor module is obtained by connecting the element-attached substrate on which wire bonding 8 has been performed to the support member 2 with a connection material foil made of a Zn-based alloy and an Al-based alloy as specified in Table 1, and sealing the periphery of the connection portion with resin. Was made.

For these power semiconductor modules, we investigated the connection status during assembly, conducted a high temperature holding test at 250 ° C for 1000h, then conducted a temperature cycle test from -40 ° C to 250 ° C, and investigated the connection status after each test. . As for the connection status at the time of assembly, Ni metallized bite of unconnected and components at the time of assembly was investigated. As a result, the case where unconnected was less than 20% of the connection area was marked with ◯, the case where it was 20% or more was marked with X, the time when Ni metallization remained was marked with ◯, and the time when disappeared. As a result of evaluating these for Example 1-17, the unconnected area is less than 20% in any case, and the Ni metallized 103 formed on the Cu plate 104 on the ceramic substrate 9 is as shown in FIG. The Ni—Al-based compound 102 derived from Al in the Al-based phase 3 was formed thereon. In the high temperature holding test at 250 ° C. for 1000 hours, the remaining state of Ni metallization of the member and the hardening of the connection were investigated. The case where the Ni metallization of the member remained after 1000 hours and the connection could be maintained is ○, the case of disappearance is ×, the hardness of the connection part is less than 20% immediately after the connection, ○, 20% or more The case was marked with x. As a result of evaluating Example 1-17, in all cases, the growth of the Ni—Al-based compound at the connection interface was small after 250 ° C. for 1000 hours, and the Ni metallization of the member remained without disappearing. Further, although the connection portion was hardened at the place where the Al-based alloy phase was present, the overall hardening of the connection portion was less than 20% after the connection. As for the temperature cycle test, the occurrence of device cracking and the connection maintaining area of the device connection portion were investigated by the temperature cycle test. The case where element cracking did not occur was marked with ◯, the case where it cracked was marked with x, the case where the element connection area maintained 80% or more of the initial value was marked with ◯, and the case where it became less than 80%. In any of Examples 1-17, no element cracking occurred, and the connection area was maintained at 80% or more of the initial value. Further, as a result of observing the cross section of the connection part, it was confirmed that the difference in the connection part thickness at both ends of the element was less than 30 μm, and the inclination could be controlled small. In the above description, the method of assembling the connection of the semiconductor element and the connection of the ceramic substrate is described in a separate process. However, after the semiconductor element 1, the connection material, the ceramic substrate 9, the connection material, and the support member 2 are stacked, They may be connected and wire bonding may be performed.

(Comparative Examples 1 and 2)
The power semiconductor module was assembled in the same process as in Example 1-17 above. The connecting material is a Zn—Al based alloy that has been dissolved before connection, and there is no Al phase. Similarly, the connection state after connection was investigated. As a result, as shown in Table 1, in both cases of Zn-4Al and Zn-6Al, 80% or more of the connected portions were not connected. This is presumably because the surface of the connecting material was a Zn-Al alloy before connection, and Al was oxidized, so that wettability could not be ensured. Since connection was not possible, connection reliability evaluation could not be performed.

(Comparative Example 3)
The power semiconductor module was assembled in the same process as in Example 1-17 above. Similarly, the connection state after connection was investigated. The connection material is almost pure Zn only. As a result, as shown in Table 1, pure Zn was able to connect with an area of 80% or more of the connection part, but the reaction between Zn and the member progressed at the connection interface, Ni metallization disappeared, and Zn and the base member (Cu plate) was reacting. As a result of maintaining this at a high temperature of 250 ° C. for 1000 hours, the reaction between Zn and the base member further progressed, and voids due to the volume change due to the reaction were introduced into the connection part, so the semiconductor element was detached with a slight force. . Therefore, the temperature cycle test could not be performed.

(Comparative Example 4)
The power semiconductor module was assembled in the same process as in Example 1-17 above. Similarly, the connection state after assembly was investigated. As a result, as shown in Table 1, Pb-5Sn was able to be connected with an area of 80% or more of the connecting portion, and Ni metallization of the member could be left. Therefore, when high temperature holding at 250 ° C. for 1000 h was performed, the Ni metallized 103 of the member remained as shown in FIG. 12, but the Ni—Sn compound 106 formed at the connection interface grew thicker than before holding. As a result, voids 107 were generated at the Ni-Sn compound / Ni plating interface. Also in this case, as in Comparative Example 3, the semiconductor element was detached with a slight force, and therefore the temperature cycle test could not be performed.

(Comparative Example 5)
The power semiconductor module was assembled in the same process as in Example 1-17 above. Similarly, the connection state after assembly was investigated. The Zn / Al / Zn multilayer connection material is a connection material disclosed in Patent Document 1. As a result, as shown in Table 1, the Zn / Al / Zn stacked connection material could be connected in an area of 80% or more of the connection portion, and Ni metallization of the member could be left. Therefore, when a high temperature holding test at 250 ° C. for 1000 h was carried out, the Ni metallization of the member was maintained without being lost even after holding, and no gap as in Comparative Example 4 was generated. As a result of evaluating the hardness of the connecting portion, as shown in FIG. 2, curing of 20% or more with respect to the hardness before holding occurred. About this, as a result of carrying out a temperature cycle test of -40 ° C. to 250 ° C. for 500 cycles and observing a cross section, Si cracking occurred. Although the crack growth area in the connection material was less than 80% of the connection area, it was not adopted as data because the thermal shock to the connection material may have been mitigated by the Si crack.

1 semiconductor element, 2 support member, 3 Al-based phase, 4 Zn-Al alloy layer, 5 Zn-based layer, 6 Cu or Ni or Ag, 7 intermetallic compound, 8 Al wire, 9 ceramic substrate, 100 roll, 101 Swelling, 102 Ni-Al compound, 103 Ni plating, 104 members (Cu), 105 Pb-5Sn, 106 Ni-Sn compound, 107 voids.

Claims

The first main plane,
In a connecting material comprising a second main surface opposite to the first main surface,
A Zn-based layer;
With Al phase,
In a certain region in a plane direction, the connection material is formed of the Zn-based layer extending from the first main surface to the second main surface.
In claim 1,
In another region different from the certain region, the first main surface and the second surface are formed of the Zn layer, and the Al system is interposed between the first main surface and the second main surface. A connection material characterized by having a phase.
In claim 1 or claim 2,
A connection material having a plurality of floating island-like Al phases.
In any one of Claims 1 thru | or 3,
A connection material characterized in that the Al content of the Zn-based layer is 0 to 0.01 mass% and has a solidus temperature higher than 250 ° C.
In any one of Claims 1 thru | or 4,
A connection material, wherein the Al content of the Al phase is 99 to 100%.
In claim 5,
A connection material, wherein the Al-based phase has a 0.2% proof stress of 30 N / mm 2 or less.
In any one of Claims 1 thru | or 6.
The connection material according to claim 1, wherein an average diameter of the Al phase is 50 μm or more.
In any one of Claims 1 thru | or 7,
The connection material, wherein a ratio of the Al phase to the connection material is higher than 6 mass% and lower than 25 mass%.
In any one of Claims 1 thru | or 8.
A connection material, wherein 80% or more of the periphery of the Al phase covered by the Zn layer is connected to the Zn layer without an Al oxide film interposed therebetween.
Including a step of rolling or pressure forming by sandwiching a plurality of Al-based phases between the first Zn-based layer and the second Zn-based layer,
In the step, the first Zn-based layer and the second Zn-based layer are connected to each other.
In claim 10,
The method for producing a connecting material, wherein the rolling is cold rolling or hot rolling.
In claim 10 or claim 11,
A method for producing a connection material, wherein the rolling degree of processing is 90% or more.
A first member;
A second member;
A semiconductor device comprising a connection material for connecting the first member and the second member,
The connecting material is
Zn-Al alloy layer,
A plurality of Al-based phases formed inside the Zn-Al-based alloy layer,
The semiconductor device, wherein the Zn—Al-based alloy layer joins the first member and the second member.
In claim 13,
The first member is a semiconductor element;
The semiconductor device, wherein the second member is any one of a substrate, a lead, and an electrode.
In claim 13 or claim 14,
A semiconductor device comprising an intermetallic compound containing Al as a main component at an interface between the connection material and the first or second member.
An installation step of installing the connection material according to any one of claims 1 to 9 between the first member and the second member;
After the installation step, a connection step of connecting the first and second members and the connection material by performing a heat treatment;
A method of manufacturing a semiconductor device including:
In claim 16,
In the connecting step, the Zn layer of the connecting material is melted by the heat treatment to become a Zn-Al alloy layer, and a part of the Al phase is not melted by the heat treatment and is in a solid state. A method of manufacturing a semiconductor device.
In claim 16,
In the connecting step, the Al-based phase is entirely melted.