WO2011156961A1 - Two-step impurity gettering process for polysilicon - Google Patents
Two-step impurity gettering process for polysilicon Download PDFInfo
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- WO2011156961A1 WO2011156961A1 PCT/CN2010/074031 CN2010074031W WO2011156961A1 WO 2011156961 A1 WO2011156961 A1 WO 2011156961A1 CN 2010074031 W CN2010074031 W CN 2010074031W WO 2011156961 A1 WO2011156961 A1 WO 2011156961A1
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- temperature
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- 238000005247 gettering Methods 0.000 title claims abstract description 43
- 239000012535 impurity Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 17
- 239000011574 phosphorus Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 238000005204 segregation Methods 0.000 claims abstract description 5
- 239000002244 precipitate Substances 0.000 claims abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 56
- 229910052757 nitrogen Inorganic materials 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000004696 coordination complex Chemical class 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to the technical field of production of solar cells, in particular to a gettering process of polycrystalline silicon. Background technique
- polycrystalline silicon Compared with single crystal silicon, polycrystalline silicon has higher density of grain boundaries, dislocations, micro defects and other structural defects and a large amount of metal impurities, especially transition metals, resulting in less efficient casting of polycrystalline silicon solar cells.
- Single crystal silicon cell efficiency in the solar cell production process, while preparing the PN junction, the phosphorus gettering method can be used to absorb the transition metal impurities in the battery body, thereby greatly improving the conversion efficiency of the battery. Phosphorus gettering is therefore one of the key steps in the preparation of low cost, high efficiency crystalline silicon solar cells.
- the main process of gettering is (1) the release of impurities. (2) Rapid diffusion of impurities. (3) Impurities are trapped at predetermined gettering locations. These predetermined gettering sites may be areas of defects, vacancies or solid solubility enhancement, and these gettering regions have a stronger binding energy to the impurity atoms so that the gettered impurities are not released again.
- the release and diffusion of impurities require that the gettering temperature should not be too low. If the temperature is too low, it is not conducive to the dissolution and diffusion of impurities.
- the segregation of impurities requires that the temperature of the gettering temperature should not be too high, if the temperature is too high. It is not conducive to the segregation of impurities into the gettering region. The combination of these two factors leads to an optimum gettering temperature curve for gettering.
- the technical problem to be solved by the present invention is to provide a simple and effective method for improving the material of a polycrystalline silicon sheet.
- the technical solution adopted by the present invention to solve the technical problem is: a two-step gettering process of polysilicon, the silicon wafer is first subjected to high-temperature phosphorus diffusion and gettering, and the impurity metal in the silicon wafer is precipitated and the impurity metal The composite is dissolved, followed by low-temperature phosphorus diffusion gettering, and the impurity atoms are effectively diffused into the phosphorus diffusion region by the difference in the segregation coefficients of the impurities in different regions, thereby obtaining a uniform diffusion region.
- High-temperature phosphorus diffusion gettering is at a high temperature of 80 (T90 (r-diffusion for 10-60 minutes, low-temperature phosphorus diffusion and gettering is to diffuse the temperature to 450-70 CTC for 1-5 hours in 1-3 hours, uniform diffusion zone of the square)
- the resistance is 30-100ohra/Sq o
- Heating the temperature in the furnace is raised from the standby temperature of 750-80 CTC to the target high-temperature diffusion temperature of 800-900 ° C for 20-30 minutes;
- c temperature is stable: wait 2-10 minutes to stabilize the temperature at the target temperature;
- Pre-deposition time 1-10 minutes, oxygen flow rate is 100-500sccm, nitrogen flow rate is 5-10slm ; e. deposition: time is 10-30 minutes, oxygen flow is 100-600sccm, nitrogen carrying phosphorus oxychloride The flow rate is 300-1500 sccm, and the nitrogen flow rate is 5-10 slm;
- the time is 1-5 hours, the oxygen flow rate is 100-600sccm, the nitrogen flow rate carrying phosphorus oxychloride is 300-1500sccm, and the nitrogen flow rate is 5- lOslm;
- the sheet resistance after diffusion is 30-100 ohm/sq o
- the silicon wafer is firstly softened before high-temperature phosphorus diffusion and gettering to remove the surface damage layer to prevent surface damage defects from going inside the wafer during high temperature. extend.
- Corrosion thickness is 3-10um when making a pile. Since the impurity concentration in the surface diffusion region is high after the gettering, after the uniform diffusion region is obtained, the diffusion layer is etched away with the HF/HN03 solution.
- the etch depth of the diffusion layer is 0. 2-lum.
- the beneficial effects of the invention are: the obtained silicon wafer is made more pure by the gettering process, thereby providing a better basis for the processing of the back battery, and the conversion efficiency of the final battery can be greatly improved. detailed description
- Wafer to be processed is a P-type polycrystalline silicon, the resistivity of 0. 2 Q cm, before diffusion, the silicon wafer subjected to conventional texturing, texturing etched thickness of 4. 5um gettering high temperature diffusion process as follows:
- Heating The temperature in the furnace is raised from the standby temperature of 800 ° C to the target high temperature diffusion temperature of 880 ° C in 30 minutes ;
- c temperature is stable: wait 10 minutes to stabilize the temperature at the target temperature;
- the time is 15 minutes, the oxygen flow rate is 300s C cm, the nitrogen flow rate of carrying phosphorus oxychloride is 500sccm, and the nitrogen flow rate is 5slm ;
- Cooling Reduce the temperature to 500 °C in 2 hours ;
- time is 5 hours, oxygen flow rate is 300sccm, nitrogen flow rate of phosphorus oxychloride is 500sccm, nitrogen flow rate is 5slm;
- Cooling Reduce the temperature to 480 °C in 10 minutes;
- the etching layer was etched with a HF / HN03 solution, a corrosion depth of 0. 4um. After passivation, the silicon wafers with high and low temperature gettering can increase the lifetime of the minority carriers by no more than 100%.
- Wafer to be processed is a P-type polycrystalline silicon, the resistivity of 0. 2 ⁇ 5 Q cm, before diffusion, the silicon wafer subjected to conventional texturing, texturing etched thickness of 4. 5um gettering high temperature diffusion process as follows:
- Heating The temperature in the furnace is raised from the standby temperature of 800 ° C to the target high temperature diffusion temperature of 850 ° C in 20 minutes ;
- c temperature is stable: wait 2 minutes to stabilize the temperature at the target temperature;
- Pre-deposition a time of 1 minute, an oxygen flow rate of 150 sccm, a nitrogen flow rate of 6. 5slm ;
- Propulsion The time is 2 minutes, the oxygen flow rate is lOOOsccm, the nitrogen flow rate is 5-10slm ; g. The temperature is lowered: the temperature is lowered to 600 °C in 1 hour;
- the time is 1 hour, the oxygen flow rate is 300 ccm, the nitrogen flow rate of carrying phosphorus oxychloride is lOOOsccm, and the nitrogen flow rate is 6.5 slm;
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to the technical field of the production of solar cells, especially to an impurity gettering process for polysilicon. The silicon wafers firstly undergo a high temperature phosphorus diffusion gettering treatment to dissolve impurities of the metal precipitates and of the metallic composite in silicon. Subsequently the wafers undergo a low temperature phosphorus diffusion gettering treatment, through the differences of the impurity segregation coefficients in different regions, to effectively diffuse the impurity atoms into the phosphorus diffusion region and to get a uniform diffusion region. Through the impurity gettering process, the silicon wafers are more purified, which provides a better basis for the following fabrication of the solar cells and may greatly improve the transform efficiency of the final solar cells.
Description
多晶硅的两步吸杂工艺 技术领域 Two-step gettering process of polysilicon
本发明涉及太阳能电池的生产技术领域， 特别是一种多晶硅的吸杂工艺。 背景技术 The invention relates to the technical field of production of solar cells, in particular to a gettering process of polycrystalline silicon. Background technique
铸造多晶硅与单晶硅相比， 多晶硅有较高密度的晶界、 位错、 微缺陷等结 构缺陷和大量的金属杂质， 特别是过渡族金属， 从而导致铸造多晶硅太阳电池 的效率低于直拉单晶硅电池效率， 在太阳电池的生产工艺中， 制备 P-N结的同 时， 可以用磷吸杂的方法来吸除电池体内的过渡族金属杂质， 从而大幅度地提 高电池的转化效率。 因此磷吸杂成为制备低成本、 高效率晶体硅太阳电池的关 键步骤之一。 Compared with single crystal silicon, polycrystalline silicon has higher density of grain boundaries, dislocations, micro defects and other structural defects and a large amount of metal impurities, especially transition metals, resulting in less efficient casting of polycrystalline silicon solar cells. Single crystal silicon cell efficiency, in the solar cell production process, while preparing the PN junction, the phosphorus gettering method can be used to absorb the transition metal impurities in the battery body, thereby greatly improving the conversion efficiency of the battery. Phosphorus gettering is therefore one of the key steps in the preparation of low cost, high efficiency crystalline silicon solar cells.
一般而言， 吸杂的主要过程是（1 )杂质的释放。 （2 )杂质的快速扩散。 （3 ) 杂质在预定的吸杂位置被捕获。 这些预定的吸杂位置可以是缺陷、 空位或固溶 度增强的区域， 而且这些吸杂区域要对杂质原子具有更牢固的束缚能， 以使这 些被吸杂的杂质不致于被再次释放。 在吸杂的过程中杂质的释放和扩散要求吸 杂温度不能过低， 如果温度过低则不利于杂质的溶解和扩散， 杂质的分凝又要 求吸杂温度温度不能过高， 如果温度过高则不利于杂质分凝到吸杂区域， 这两 方面的因素共同作用导致吸杂有一个最佳的吸杂温度曲线。 In general, the main process of gettering is (1) the release of impurities. (2) Rapid diffusion of impurities. (3) Impurities are trapped at predetermined gettering locations. These predetermined gettering sites may be areas of defects, vacancies or solid solubility enhancement, and these gettering regions have a stronger binding energy to the impurity atoms so that the gettered impurities are not released again. In the process of gettering, the release and diffusion of impurities require that the gettering temperature should not be too low. If the temperature is too low, it is not conducive to the dissolution and diffusion of impurities. The segregation of impurities requires that the temperature of the gettering temperature should not be too high, if the temperature is too high. It is not conducive to the segregation of impurities into the gettering region. The combination of these two factors leads to an optimum gettering temperature curve for gettering.
发明内容 Summary of the invention
本发明要解决的技术问题是：提供一种简单有效的提高多晶硅片材质 的方法。 The technical problem to be solved by the present invention is to provide a simple and effective method for improving the material of a polycrystalline silicon sheet.
本发明解决其技术问题所采用的技术方案是： 一种多晶硅的两步吸杂 工艺， 硅片首先进行高温磷扩散吸杂， 使硅片内的杂质金属沉淀以及杂质金属
复合体溶解， 接下来进行低温磷扩散吸杂， 通过杂质在不同区域的分凝系数差 异， 使杂质原子有效地扩散到磷扩散区， 得到均匀扩散区。 The technical solution adopted by the present invention to solve the technical problem is: a two-step gettering process of polysilicon, the silicon wafer is first subjected to high-temperature phosphorus diffusion and gettering, and the impurity metal in the silicon wafer is precipitated and the impurity metal The composite is dissolved, followed by low-temperature phosphorus diffusion gettering, and the impurity atoms are effectively diffused into the phosphorus diffusion region by the difference in the segregation coefficients of the impurities in different regions, thereby obtaining a uniform diffusion region.
高温磷扩散吸杂是在高温 80(T90(rC下扩散 10-60分钟， 低温磷扩散吸杂 是在 1-3小时将温度降到 450-70CTC下扩散 1-5小时， 均匀扩散区的方块电阻 为 30-100ohra/Sq o High-temperature phosphorus diffusion gettering is at a high temperature of 80 (T90 (r-diffusion for 10-60 minutes, low-temperature phosphorus diffusion and gettering is to diffuse the temperature to 450-70 CTC for 1-5 hours in 1-3 hours, uniform diffusion zone of the square) The resistance is 30-100ohra/Sq o
具体步骤为： The specific steps are:
a.进舟： 把装有硅片的石英舟放入扩散管； a. Entering the boat: Put the quartz boat with the silicon wafer into the diffusion tube;
b.升温：用 20-30分钟的时间把炉内温度从待机时温度 750-80CTC升高到目 标高温扩散温度 800-900°C ; b. Heating: the temperature in the furnace is raised from the standby temperature of 750-80 CTC to the target high-temperature diffusion temperature of 800-900 ° C for 20-30 minutes;
c温度稳定： 等待 2-10分钟使温度稳定在目标温度； c temperature is stable: wait 2-10 minutes to stabilize the temperature at the target temperature;
d.预沉积：时间 1-10分钟，氧气流量为 100-500sccm，氮气流量为 5-10slm; e.沉积： 时间为 10-30分钟， 氧气流量为 100-600sccm， 携带三氯氧磷的氮 气流量为 300-1500sccm， 氮气流量为 5-10slm; d. Pre-deposition: time 1-10 minutes, oxygen flow rate is 100-500sccm, nitrogen flow rate is 5-10slm ; e. deposition: time is 10-30 minutes, oxygen flow is 100-600sccm, nitrogen carrying phosphorus oxychloride The flow rate is 300-1500 sccm, and the nitrogen flow rate is 5-10 slm;
f.推进：时间为 2-10分钟，氧气流量为 300-1000sccm，氮气流量为 5-10slm; g.降温： 用 1-3小时将温度降到 450-700 °C ; f. Advance: time is 2-10 minutes, oxygen flow is 300-1000sccm, nitrogen flow is 5-10slm; g. cooling: the temperature is lowered to 450-700 °C in 1-3 hours;
h.沉积： 时间为 1-5小时， 氧气流量为 100-600sccm， 携带三氯氧磷的氮气 流量为 300- 1500sccm， 氮气流量为 5- lOslm ； h. Deposition: The time is 1-5 hours, the oxygen flow rate is 100-600sccm, the nitrogen flow rate carrying phosphorus oxychloride is 300-1500sccm, and the nitrogen flow rate is 5- lOslm;
i.推进：时间为 2-10分钟，氧气流量为 300-1000sccm，氮气流量为 5-10slm j.降温： 用 10-30分钟将温度降到 400-500 °C ; i. Advance: time is 2-10 minutes, oxygen flow is 300-1000sccm, nitrogen flow is 5-10slm j. Cooling: the temperature is lowered to 400-500 °C in 10-30 minutes ;
k.出舟： 扩散后的方块电阻为 30-100 ohm/sq o 硅片在高温磷扩散吸杂前首先进行制绒， 以去除表面损伤层， 防止高温过 程中， 表面损伤缺陷往硅片内部延伸。 k. Out of the boat: The sheet resistance after diffusion is 30-100 ohm/sq o The silicon wafer is firstly softened before high-temperature phosphorus diffusion and gettering to remove the surface damage layer to prevent surface damage defects from going inside the wafer during high temperature. extend.
制绒时腐蚀厚度为 3- 10um。
说 明 书 因为吸杂后，表面扩散区杂质浓度较高，在得到均匀扩散区后，再用 HF/HN03 溶液刻蚀掉扩散层。 Corrosion thickness is 3-10um when making a pile. Since the impurity concentration in the surface diffusion region is high after the gettering, after the uniform diffusion region is obtained, the diffusion layer is etched away with the HF/HN03 solution.
用 HF/HN03溶液刻蚀掉扩散层的腐蚀深度为 0. 2-lum。 本发明的有益效果是： 通过该吸杂工艺， 使得到的硅片更加纯净， 从而为后道 电池的加工提供了更好的基础， 可以大幅度地提高最终电池的转化效率。 具体实施方式 The etch depth of the diffusion layer is 0. 2-lum. The beneficial effects of the invention are: the obtained silicon wafer is made more pure by the gettering process, thereby providing a better basis for the processing of the back battery, and the conversion efficiency of the final battery can be greatly improved. detailed description
实施方式 （一） Implementation (1)
待加工的硅片为 P型多晶硅， 电阻率为 0. 2 Q cm ， 在扩散前， 硅片经过 常规制绒， 制绒腐蚀厚度为 4. 5um 高低温扩散吸杂工艺为： Wafer to be processed is a P-type polycrystalline silicon, the resistivity of 0. 2 Q cm, before diffusion, the silicon wafer subjected to conventional texturing, texturing etched thickness of 4. 5um gettering high temperature diffusion process as follows:
a.进舟： 把装有硅片的石英舟放入扩散管； a. Entering the boat: Put the quartz boat with the silicon wafer into the diffusion tube;
b.升温： 用 30分钟的时间把炉内温度从待机时温度 800°C升高到目标高温 扩散温度 880 °C ; b. Heating: The temperature in the furnace is raised from the standby temperature of 800 ° C to the target high temperature diffusion temperature of 880 ° C in 30 minutes ;
c温度稳定： 等待 10分钟使温度稳定在目标温度； c temperature is stable: wait 10 minutes to stabilize the temperature at the target temperature;
d.预沉积： 时间 1分钟， 氧气流量为 200sccm， 氮气流量为 6slm; d. Pre-deposition: time 1 minute, oxygen flow rate is 200sccm, nitrogen flow rate is 6slm;
e.沉积： 时间为 15分钟， 氧气流量为 300sCcm， 携带三氯氧磷的氮气流量 为 500sccm， 氮气流量为 5slm; e. Deposition: The time is 15 minutes, the oxygen flow rate is 300s C cm, the nitrogen flow rate of carrying phosphorus oxychloride is 500sccm, and the nitrogen flow rate is 5slm ;
f.推进： 时间为 2分钟， 氧气流量为 500sccm， 氮气流量为 5slm; f. Propulsion: time is 2 minutes, oxygen flow is 500sccm, nitrogen flow is 5slm;
g.降温： 用 2小时将温度降到 500°C ; g. Cooling: Reduce the temperature to 500 °C in 2 hours ;
h.沉积： 时间为 5小时， 氧气流量为 300sccm， 携带三氯氧磷的氮气流量为 500sccm, 氮气流量为 5slm ； h. Deposition: time is 5 hours, oxygen flow rate is 300sccm, nitrogen flow rate of phosphorus oxychloride is 500sccm, nitrogen flow rate is 5slm;
i.推进： 时间为 2分钟， 氧气流量为 500sccm， 氮气流量为 5slm
说 明 书 i. Advance: time is 2 minutes, oxygen flow is 500sccm, nitrogen flow is 5slm Instruction manual
j.降温： 用 10分钟将温度降到 480°C ; j. Cooling: Reduce the temperature to 480 °C in 10 minutes;
k.出舟： 扩散后的方块电阻为 60 ohm/sci。 k. Out of the boat: The square resistance after diffusion is 60 ohm/sci.
用 HF/HN03溶液刻蚀掉扩散层， 腐蚀深度为 0. 4um。经钝化后测试， 用高低 温吸杂的硅片， 吸杂后少子寿命较没有吸杂的可提高 100%。 4微米。 The etching layer was etched with a HF / HN03 solution, a corrosion depth of 0. 4um. After passivation, the silicon wafers with high and low temperature gettering can increase the lifetime of the minority carriers by no more than 100%.
实施方式 （二） Implementation method (2)
待加工的硅片为 P型多晶硅， 电阻率为 0. 2〜5 Q cm ， 在扩散前， 硅片经过 常规制绒， 制绒腐蚀厚度为 4. 5um 高低温扩散吸杂工艺为： Wafer to be processed is a P-type polycrystalline silicon, the resistivity of 0. 2~5 Q cm, before diffusion, the silicon wafer subjected to conventional texturing, texturing etched thickness of 4. 5um gettering high temperature diffusion process as follows:
a.进舟： 把装有硅片的石英舟放入扩散管； a. Entering the boat: Put the quartz boat with the silicon wafer into the diffusion tube;
b.升温： 用 20分钟的时间把炉内温度从待机时温度 800°C升高到目标高温 扩散温度 850 °C ; b. Heating: The temperature in the furnace is raised from the standby temperature of 800 ° C to the target high temperature diffusion temperature of 850 ° C in 20 minutes ;
c温度稳定： 等待 2分钟使温度稳定在目标温度； c temperature is stable: wait 2 minutes to stabilize the temperature at the target temperature;
d.预沉积： 时间 1分钟， 氧气流量为 150sccm， 氮气流量为 6. 5slm; I. Pre-deposition: a time of 1 minute, an oxygen flow rate of 150 sccm, a nitrogen flow rate of 6. 5slm ;
e.沉积： 时间为 15分钟， 氧气流量为 300sccm， 携带三氯氧磷的氮气流量 为 1000sccm， 氮气流量为 6. 5slm; 5slm ; a nitrogen flow rate of 6. 5slm ; a nitrogen flow rate of 6. 5slm ;
f.推进： 时间为 2分钟， 氧气流量为 lOOOsccm, 氮气流量为 5-10slm; g.降温： 用 1小时将温度降到 600°C ; f. Propulsion: The time is 2 minutes, the oxygen flow rate is lOOOsccm, the nitrogen flow rate is 5-10slm ; g. The temperature is lowered: the temperature is lowered to 600 °C in 1 hour;
h.沉积： 时间为 1小时， 氧气流量为 300ccm， 携带三氯氧磷的氮气流量为 lOOOsccm, 氮气流量为 6. 5slm ； h. Deposition: The time is 1 hour, the oxygen flow rate is 300 ccm, the nitrogen flow rate of carrying phosphorus oxychloride is lOOOsccm, and the nitrogen flow rate is 6.5 slm;
i.推进： 时间为 2分钟， 氧气流量为 lOOOsccm, 氮气流量为 6. 5slm j.降温： 用 30分钟将温度降到 500°C ; i. Advance: The time is 2 minutes, the oxygen flow rate is lOOOsccm, and the nitrogen flow rate is 6. 5slm j. Cooling: The temperature is lowered to 500 ° C in 30 minutes;
k.出舟： 扩散后的方块电阻为 70 ohm/sq。
用 HF/HN03溶液刻蚀掉扩散层， 腐蚀深度为 0. 5um。 经钝化后测试， 用高低温吸杂的硅片， 吸杂后少子寿命较没有吸杂的可提 0%。 k. Out of the boat: The square resistance after diffusion is 70 oh m /sq. 5微米。 The etched depth of 0. 5um. After passivation test, using silicon wafers with high and low temperature absorption, the lifetime of the minority carriers after gettering is 0% lower than that without gettering.
说 Say
书
Book
Claims
1、 一种多晶硅的两步吸杂工艺， 其特征是： 硅片首先进行高温磷扩散吸 杂， 使硅片内的杂质金属沉淀以及杂质金属复合体溶解， 接下来进行低温磷扩 散吸杂， 通过杂质在不同区域的分凝系数差异， 使杂质原子有效地扩散到磷扩 散区， 得到均匀扩散区。 1. A two-step gettering process for polysilicon, characterized in that: the silicon wafer is first subjected to high-temperature phosphorus diffusion and gettering, so that impurity metal precipitates in the silicon wafer and impurity metal complex are dissolved, and then low-temperature phosphorus diffusion and gettering is performed. By the difference in the segregation coefficient of the impurities in different regions, the impurity atoms are effectively diffused into the phosphorus diffusion region, and a uniform diffusion region is obtained.
2、 根据权利要求 1所述的多晶硅的两步吸杂工艺， 其特征是： 高温磷 扩散吸杂是在高温 80(Γ900Ό下扩散 10-60分钟， 低温磷扩散吸杂是在 1-3小 时内将温度降到 450-70CTC下再扩散 1-5 小时， 均匀扩散区的方块电阻为 30- 100ohm/Sq。 2. The two-step gettering process of polycrystalline silicon according to claim 1, wherein: the high temperature phosphorus diffusion gettering is carried out at a high temperature of 80 (Γ900 扩散 for 10 to 60 minutes, and the low temperature phosphorus diffusion and gettering is for 1-3 hours). The internal temperature is lowered to 450-70 CTC for another 1-5 hours, and the sheet resistance of the uniform diffusion region is 30-100 ohm/Sq.
3、 根据权利要求 2所述的多晶硅的两歩吸杂工艺， 其特征是： 具体步骤 为： 3. The two-powder gettering process of polycrystalline silicon according to claim 2, wherein: the specific steps are:
a.进舟： 把装有硅片的石英舟放入扩散管； a. Entering the boat: Put the quartz boat with the silicon wafer into the diffusion tube;
b.升温：用 20-30分钟的时间把炉内温度从待机时温度 750-80CTC升高到目 标高温扩散温度 800-900°C ; b. Heating: the temperature in the furnace is raised from the standby temperature of 750-80 CTC to the target high-temperature diffusion temperature of 800-900 ° C in 20-30 minutes ;
c温度稳定： 等待 2-10分钟使温度稳定在目标温度； c temperature is stable: wait 2-10 minutes to stabilize the temperature at the target temperature;
d.预沉积：时间 1-10分钟，氧气流量为 100-500sccm，氮气流量为 5-10slm; e.沉积： 时间为 10-30分钟， 氧气流量为 100-600sccm， 携带三氯氧磷的氮 气流量为 300-1500sccm， 氮气流量为 5-10slm; d. Pre-deposition: time 1-10 minutes, oxygen flow rate is 100-500sccm, nitrogen flow rate is 5-10slm ; e. deposition: time is 10-30 minutes, oxygen flow is 100-600sccm, nitrogen carrying phosphorus oxychloride The flow rate is 300-1500 sccm, and the nitrogen flow rate is 5-10 slm;
f.推进：时间为 2-10分钟，氧气流量为 300-1000sccm，氮气流量为 5-10slm; g.降温： 用 1-3小时将温度降到 450-700 °C ; f. Advance: time is 2-10 minutes, oxygen flow is 300-1000sccm, nitrogen flow is 5-10slm; g. cooling: the temperature is lowered to 450-700 °C in 1-3 hours;
h.沉积： 时间为 1-5小时， 氧气流量为 100-600sccni， 携带三氯氧磷的氮气 流量为 300-1500sccm, 氮气流量为 5-10slm ； h. Deposition: The time is 1-5 hours, the oxygen flow rate is 100-600 sccni, the nitrogen flow rate carrying phosphorus oxychloride is 300-1500 sccm, and the nitrogen flow rate is 5-10 slm;
i.推进：时间为 2-10分钟，氧气流量为 300-1000sccm，氮气流量为 5-10slm j.降温： 用 10-30分钟将温度降到 400-500 °C ; 权 利 要 求 书 i. Advance: time is 2-10 minutes, oxygen flow is 300-1000sccm, nitrogen flow is 5-10slm j. Cooling: the temperature is lowered to 400-500 °C in 10-30 minutes; Claim
k.出舟： 扩散后的方块电阻为 30-100 ohm/sq。 k. Out of the boat: The square resistance after diffusion is 30-100 ohm/sq.
4、 根据权利要求 1、 2或 3所述的多晶硅的两步吸杂工艺， 其特征是： 所述的硅片在高温磷扩散吸杂前首先进行制绒。 4. The two-step gettering process of polycrystalline silicon according to claim 1, 2 or 3, wherein: said silicon wafer is first subjected to texturing before high temperature phosphorus diffusion and gettering.
5、 根据权利要求 4所述的多晶硅的两步吸杂工艺， 其特征是： 所述的制 绒时腐蚀厚度为 3_10um。 5. The two-step gettering process of polycrystalline silicon according to claim 4, wherein: the thickness of the corroded metal is 3 to 10 um.
6、 根据权利要求 1、 2或 3所述的多晶硅的两步吸杂工艺， 其特征是： 在得到均匀扩散区后， 再用 HF/HN03溶液刻蚀掉扩散层。 A two-step gettering process for polycrystalline silicon according to claim 1, 2 or 3, characterized in that after the uniform diffusion region is obtained, the diffusion layer is etched away by using a HF/HN03 solution.
7、 根据权利要求 6所述的多晶硅的两步吸杂工艺， 其特征是： 所述的用 HF/HN03溶液刻蚀掉扩散层的腐蚀深度为 0. 2-lumo The etched depth of the diffusion layer of the HF/HN03 solution is 0. 2-lumo
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