WO2011139402A1 - Removing a sheet from the surface of a melt using gas jets - Google Patents

Removing a sheet from the surface of a melt using gas jets Download PDF

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Publication number
WO2011139402A1
WO2011139402A1 PCT/US2011/026790 US2011026790W WO2011139402A1 WO 2011139402 A1 WO2011139402 A1 WO 2011139402A1 US 2011026790 W US2011026790 W US 2011026790W WO 2011139402 A1 WO2011139402 A1 WO 2011139402A1
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WO
WIPO (PCT)
Prior art keywords
melt
sheet
meniscus
gas
gas jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/026790
Other languages
English (en)
French (fr)
Other versions
WO2011139402A8 (en
Inventor
Peter L. Kellerman
Gregory D. Thronson
Dawei Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Priority to KR1020177026816A priority Critical patent/KR101898905B1/ko
Priority to EP17201509.1A priority patent/EP3305946B1/en
Priority to KR1020127030651A priority patent/KR101783226B1/ko
Priority to JP2013509053A priority patent/JP5771271B2/ja
Priority to CN201180031762.2A priority patent/CN103025926B/zh
Priority to EP11710924.9A priority patent/EP2567003B1/en
Publication of WO2011139402A1 publication Critical patent/WO2011139402A1/en
Anticipated expiration legal-status Critical
Publication of WO2011139402A8 publication Critical patent/WO2011139402A8/en
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y10T117/1048—Pulling includes a horizontal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Definitions

  • This invention relates to sheet formation from a melt and, more particularly, to removing the sheet from the melt.
  • FIG. 3 is a cross-sectional side view of meniscus stabilization for LASS
  • FIG. 7 is a cross-sectional side view of a first embodiment of a gas jet with sheet formation
  • the embodiments of the apparatus and methods herein are described in connection with solar cells. However, these also may be used to produce, for example, integrated circuits, flat panels, LEDs, or other substrates known to those skilled in the art.
  • the melt is described herein as being silicon, the melt may contain germanium, silicon and germanium, gallium, gallium nitride, other semiconductor materials, or other materials known to those skilled in the art. Thus, the invention is not limited to the specific embodiments described below.
  • ⁇ is the difference in pressure across the interface
  • o is the surface tension of the liquid
  • R is the radius of curvature of the surface
  • the magnitude of the pressure at the exit of the gas jet 22 depends on the flow of gas and the width of the opening in the gas jet 22 that allows the flow of gas.
  • the opening may be, for example, a slit jet. This may be at least partly estimated using conservation of momentum. So at the stagnation point where the gas bounces off the meniscus 27, the pressure would be: where p g , u g , and Q g are the gas density, velocity, and volume flow rate, respectively.
  • the following example calculates the flow of argon needed to obtain a pressure of 40 Pa at the meniscus 27 through an opening in the gas jet 22 that is 0.5 mm in width.
  • the density of the argon at the temperature of the melt 10, which is 1412°C for silicon, is 0.32 kg/m 3 .
  • FIG. 8 is a cross-sectional side view of a second embodiment of a gas jet with sheet formation.
  • the gas jet 22 is incorporated into the support table 23.
  • a gas jet above the sheet 13 may be provided to balance vertical impingement forces as illustrated in FIG. 7.
  • FIG. 9 is a cross-sectional side view of a third embodiment of a gas jet with sheet formation.
  • the gas jet 22 is part of a pressure cell 26.
  • P2 higher pressure
  • FIGs. 10A-D illustrate seeding enabled by gas jet stabilization. Embodiments disclosed herein stabilize the meniscus independent of flow within the vessel 16. Thus, crystal initiation may begin before the melt 10 begins to flow and simplifies the sheet fabrication process.
  • a seed wafer 28 is inserted.
  • the seed wafer 28 may be, for example, an electronics-grade silicon wafer approximately 0.7 mm thick with the desired crystal orientation.
  • the level of the seed wafer 28 is controlled by having it ride above a support table 23 that controls the level of the seed wafer 28 against the level of the melt 10.
  • the melt 10 may form a mesa 29 or be above the edge of the wall of the vessel 16 using the surface tension of, for example, the silicon in the melt 10.
  • the seed wafer 28 is translated in FIG. IOC in the direction of the arrow. This translation may be caused by a roller or some other mechanism at an end of the seed wafer 28.
  • the seed wafer 28 moves under the cooling plate 14 opposite the direction that the seed wafer 28 was inserted.
  • the cooling plate 14 may be turned off initially or be at a temperature at or above the temperature of the melt 10. If the cooling plate 14 is located a certain distance upstream of the wall of the vessel 16 where the meniscus 27 is attached, effects of the meniscus 27 may be minimized.
  • freezing is initiated near the seed wafer 28.
  • the seed wafer 28 pulling motion begins and a sheet 13 is pulled out.
  • FIG. 11 is a cross-sectional view of an embodiment of a gas jet.
  • the gas jet 22 has a plenum 29 and opening 30. Gas flows in the direction of the arrow. Having a larger plenum 29 than an opening 30 may ensure uniform pressure and flow across the dimensions of the opening 30.
  • the opening 30 has a width approximately equal to the width of the sheet, such as the sheet 13 in FIG. 4. Of course, other dimensions are possible.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Separation, Recovery Or Treatment Of Waste Materials Containing Plastics (AREA)
PCT/US2011/026790 2010-05-06 2011-03-02 Removing a sheet from the surface of a melt using gas jets Ceased WO2011139402A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020177026816A KR101898905B1 (ko) 2010-05-06 2011-03-02 가스 제트들을 이용한 용융물의 표면으로부터의 시트의 제거
EP17201509.1A EP3305946B1 (en) 2010-05-06 2011-03-02 Removing a sheet from the surface of a melt using gas jets
KR1020127030651A KR101783226B1 (ko) 2010-05-06 2011-03-02 가스 제트들을 이용한 용융물의 표면으로부터의 시트의 제거
JP2013509053A JP5771271B2 (ja) 2010-05-06 2011-03-02 ガスジェットを用いる融液の表面からのシートの取り出し
CN201180031762.2A CN103025926B (zh) 2010-05-06 2011-03-02 使用气体喷嘴从熔化物表面移离板材
EP11710924.9A EP2567003B1 (en) 2010-05-06 2011-03-02 Removing a sheet from the surface of a melt using gas jets

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US33207310P 2010-05-06 2010-05-06
US61/332,073 2010-05-06
US13/037,789 2011-03-01
US13/037,789 US8685162B2 (en) 2010-05-06 2011-03-01 Removing a sheet from the surface of a melt using gas jets

Publications (2)

Publication Number Publication Date
WO2011139402A1 true WO2011139402A1 (en) 2011-11-10
WO2011139402A8 WO2011139402A8 (en) 2013-01-31

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PCT/US2011/026790 Ceased WO2011139402A1 (en) 2010-05-06 2011-03-02 Removing a sheet from the surface of a melt using gas jets

Country Status (7)

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US (2) US8685162B2 (enExample)
EP (2) EP2567003B1 (enExample)
JP (2) JP5771271B2 (enExample)
KR (2) KR101783226B1 (enExample)
CN (1) CN103025926B (enExample)
TW (1) TWI550142B (enExample)
WO (1) WO2011139402A1 (enExample)

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US9957636B2 (en) * 2014-03-27 2018-05-01 Varian Semiconductor Equipment Associates, Inc. System and method for crystalline sheet growth using a cold block and gas jet
US10526720B2 (en) * 2015-08-19 2020-01-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for forming crystalline sheet from a melt
US10179958B2 (en) * 2016-09-16 2019-01-15 Varian Semiconductor Equipment Associates, Inc Apparatus and method for crystalline sheet growth
WO2020033419A1 (en) * 2018-08-06 2020-02-13 Carnegie Mellon University Method for producing a sheet from a melt by imposing a periodic change in the rate of pull
JP2022533146A (ja) * 2019-05-13 2022-07-21 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 炉内でのシリコンリボンのガス曝露
AU2020328504A1 (en) 2019-08-09 2022-02-17 Leading Edge Equipment Technologies, Inc. Producing a ribbon or wafer with regions of low oxygen concentration
JP2023514607A (ja) * 2020-02-19 2023-04-06 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 表面冷却と溶融加熱を組み合わせて用いる、溶融物の表面上に形成された結晶シートの厚さ及び幅の制御
WO2021168256A1 (en) 2020-02-19 2021-08-26 Leading Edge Equipment Technologies, Inc. Active edge control of a crystalline sheet formed on the surface of a melt

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DE2633961A1 (de) * 1975-07-28 1977-02-17 Mitsubishi Metal Corp Verfahren zum zuechten eines duennen kristallbands
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TWI550142B (zh) 2016-09-21
WO2011139402A8 (en) 2013-01-31
JP2015157757A (ja) 2015-09-03
CN103025926B (zh) 2016-03-30
KR101898905B1 (ko) 2018-09-14
US20140209016A1 (en) 2014-07-31
JP2013530911A (ja) 2013-08-01
KR20130100058A (ko) 2013-09-09
US8685162B2 (en) 2014-04-01
KR101783226B1 (ko) 2017-09-29
JP5771271B2 (ja) 2015-08-26
EP3305946A1 (en) 2018-04-11
EP3305946B1 (en) 2019-05-01
US20110271899A1 (en) 2011-11-10
CN103025926A (zh) 2013-04-03
EP2567003B1 (en) 2018-01-10
JP5961303B2 (ja) 2016-08-02
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EP2567003A1 (en) 2013-03-13
US9677193B2 (en) 2017-06-13

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