WO2011135514A2 - Process for preparing a zinc complex in solution - Google Patents
Process for preparing a zinc complex in solution Download PDFInfo
- Publication number
- WO2011135514A2 WO2011135514A2 PCT/IB2011/051816 IB2011051816W WO2011135514A2 WO 2011135514 A2 WO2011135514 A2 WO 2011135514A2 IB 2011051816 W IB2011051816 W IB 2011051816W WO 2011135514 A2 WO2011135514 A2 WO 2011135514A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solution
- independently
- solvent
- process according
- concentration
- Prior art date
Links
- 239000011701 zinc Substances 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052725 zinc Inorganic materials 0.000 title description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 158
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 156
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 109
- 239000011787 zinc oxide Substances 0.000 claims abstract description 78
- 229910021511 zinc hydroxide Inorganic materials 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000002904 solvent Substances 0.000 claims abstract description 44
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 21
- 239000000725 suspension Substances 0.000 claims abstract description 21
- 239000007787 solid Substances 0.000 claims abstract description 17
- 239000000243 solution Substances 0.000 claims description 166
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 150000001768 cations Chemical class 0.000 claims description 10
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 235000014692 zinc oxide Nutrition 0.000 description 71
- 150000001875 compounds Chemical class 0.000 description 17
- 239000002243 precursor Substances 0.000 description 15
- -1 polyethylene naphthalate Polymers 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000000654 additive Substances 0.000 description 9
- 229940007718 zinc hydroxide Drugs 0.000 description 9
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 9
- 238000001636 atomic emission spectroscopy Methods 0.000 description 8
- 238000000921 elemental analysis Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 8
- XMTQQYYKAHVGBJ-UHFFFAOYSA-N 3-(3,4-DICHLOROPHENYL)-1,1-DIMETHYLUREA Chemical compound CN(C)C(=O)NC1=CC=C(Cl)C(Cl)=C1 XMTQQYYKAHVGBJ-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000005293 duran Substances 0.000 description 7
- 239000003446 ligand Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 239000011112 polyethylene naphthalate Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007669 thermal treatment Methods 0.000 description 5
- 150000003751 zinc Chemical class 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010414 supernatant solution Substances 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910000368 zinc sulfate Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003125 aqueous solvent Substances 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 2
- 229960001763 zinc sulfate Drugs 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- LCTONWCANYUPML-UHFFFAOYSA-M Pyruvate Chemical compound CC(=O)C([O-])=O LCTONWCANYUPML-UHFFFAOYSA-M 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical group O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Definitions
- the present invention relates to a process for preparing a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10, comprising at least the steps of (A) contacting ZnO and/or Zn(OH) 2 with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 with a concentration c1 , (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH) 2 , (C) removing solid Zn(OH) 2 from the suspension from step (B), and (D) contacting the Zn(OH) 2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z
- printed electronic components can be obtained by using a printable ink which comprises an organometallic zinc complex as a precursor compound for the semiconductive zinc oxide.
- organometallic zinc complex used, at least one oximate ligand is present.
- this zinc complex is free of alkali metals and alkaline earth metals.
- preference is given to using an organometallic zinc complex which has a ligand selected from 2-(methoxyimino)alkanoate, 2-(ethoxyimino)alkanoate or 2-(hydroxyimino)alkanoate.
- EP 1 993 122 A2 discloses a process for producing a semiconductive zinc oxide layer as a thin-layer transistor using a precursor solution which can be processed at low temperatures.
- the precursor solution comprises a zinc salt and a complexing reagent.
- Suitable zinc salts are zinc nitrate, zinc chloride, zinc sulfate or zinc acetate.
- the complexing reagents used are carboxylic acids or organic amines.
- the process for coating a substrate with semiconductive ZnO should also lead to correspondingly coated substrates with improved properties.
- process (1 ) for preparing a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10, comprising at least the steps of:
- step (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH) 2 ,
- step (D) contacting the Zn(OH) 2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 with the concentration c2.
- process (2) according to the invention for producing a layer comprising at least zinc oxide on a substrate comprising at least the steps of:
- step (G) thermally treating the substrate from step (F) at a temperature of 20 to 450°C in order to convert the electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 to zinc oxide.
- Step (A) of process (1 ) according to the invention comprises the contacting of ZnO and/or Zn(OH) 2 with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 with a concentration c1 .
- a suitable reactor is initially charged with solid zinc oxide ZnO or zinc hydroxide Zn(OH) 2 or mixtures thereof.
- the ZnO and/or Zn(OH) 2 usable in accordance with the invention can be obtained by all processes known to those skilled in the art.
- Zn(OH) 2 can be obtained, for example, by reacting suitable zinc salts, for example zinc nitrate such as Zn(N0 3 ) 2 ⁇ 6 H 2 0, zinc sulfate ZnS0 4 ⁇ 7 H 2 0, zinc chloride ZnCI 2 , with aqueous alkali metal hydroxide solutions, for example aqueous NaOH solution, KOH solution.
- suitable zinc salts for example zinc nitrate such as Zn(N0 3 ) 2 ⁇ 6 H 2
- ZnCI 2 aqueous alkali metal hydroxide solutions
- aqueous NaOH solution, KOH solution for example aqueous NaOH solution
- Zn(OH) 2 precursor compounds for example selected from the group consisting of zinc alkoxides, zinc amides, zinc alkyls and mixtures, which likewise give rise to particularly reactive Zn(OH) 2 after step (C).
- the solid zinc oxide and/or zinc hydroxide is/are then treated with a solution of ammonia (NH 3 ) in a suitable solvent.
- a solution of ammonia (NH 3 ) in a suitable solvent it is possible to initially charge either solid zinc oxide and/or zinc hydroxide, and to treat them with ammonia (NH 3 ) in a suitable solvent, or to initially charge ammonia (NH 3 ) in a suitable solvent and to add solid zinc oxide and/or zinc hydroxide.
- Step (A) of process (1 ) according to the invention can be performed in all reactors known to those skilled in the art, for example stirred reactors. According to the invention, step (A) can be performed continuously or batchwise.
- the solvent is preferably an aqueous solvent, for example an alcoholic aqueous solution or water, more preferably water.
- Ammonia is present in this preferably aqueous solution in a concentration of 1 to 18 mol/l, preferably 2 to 15 mol/l, more preferably 3 to 12 mol/l, based in each case on the overall solution.
- step (A) preference is given to adding a sufficient amount of the ammonia solution to the solid zinc oxide and/or zinc hydroxide that a reaction mixture is obtained in which zinc oxide is present generally with a concentration of 0.01 to 0.33 mol/l, preferably 0.05 to 0.25 mol/l, more preferably 0.1 to 0.2 mol/l. It is optionally also possible to work directly in liquid ammonia.
- the reaction mixture thus obtained is then optionally stirred under pressure at a temperature of generally 10 to 120°C, preferably 10 to 60°C, more preferably 20 to 30°C.
- the suspension is stirred until the desired proportion of the zinc oxide or hydroxide has gone into solution, for example 2 to 72 h, preferably 2 to 24 h.
- the solution obtained can optionally be purified, for example by filtration.
- x, y and z are generally each independently 0.01 to 10, preferably each independently 1 to 6.
- z 1 .
- x 2.
- y 2 or 4.
- x, y and z may each independently be either integers or fractions.
- the present invention therefore preferably relates to the process according to the invention wherein x, y, and z are each independently 1 to 6.
- the electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10, which is present in the solution and is prepared with preference in step (A) of process (1 ) according to the invention, is notable in that it preferably does not comprise any impurities, for example extraneous ions such as Na + , K + , N0 3 " etc., which originate from the reactants used for the preparation, extremely inexpensive reactants can be used and no purification steps are needed.
- the product obtained with preference preferably has a particularly high purity directly after the preparation without any further purification steps, for example of > 99%, preferably of > 99.5%, more preferably of > 99.9%.
- a solution which comprises electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 in a solvent, preferably in water.
- the solution obtained in step (A) may optionally comprise further additives which serve, for example, to improve any deposition operation on to a substrate, if the solution prepared by the process according to the invention is used, for example, to produce a layer of ZnO on a substrate, for example by process (2) according to the invention.
- These additives can be introduced separately into the solution in step (A). However, it is not preferred in accordance with the invention to add corresponding additives in step (A). When corresponding additives are added in accordance with the invention this is preferably done in step (D) of the process according to the invention.
- the solution prepared in step (A) of process (1 ) according to the invention comprises electrically uncharged [(OH ) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 in a concentration c1 .
- the concentration c1 is generally 0.1 to 2.2 g of Zn/100 g of solution, preferably 0.3 to 1 .5 g of Zn/100 g of solution, more preferably 0.7 to 1 .3 g of Zn/100 g of solution.
- a typical concentration c1 is 1 g of Zn/100 g of solution.
- the solution prepared in step (A) of process (1 ) according to the invention may additionally also comprise further metal cations which serve to dope the ZnO optionally obtained.
- these metal cations are selected from the group consisting of Al 3+ , ln 3+ , Sn 4+ , Ga 3+ and mixtures thereof.
- These metal cations can be introduced separately into the solution in step (A).
- corresponding metal cations are added for doping in accordance with the invention, this is preferably done in step (D) of the process according to the invention.
- the dopant metal cations mentioned can be added in the form of metal oxides, metal hydroxides, metal alkoxides, or in the form of soluble complexes.
- the dopants mentioned can be added to the solution in step (A) of the process according to the invention generally in an amount of 0.02 to 10 mol% based on Zn, preferably of 0.1 to 5 mol% based on Zn.
- the present invention therefore also relates to process (1 ) according to the invention wherein the solution prepared comprises metal cations selected from the group consisting of Al 3+ , ln 3+ , Sn 4+ , Ga 3+ and mixtures thereof.
- Step (B) of process (1 ) according to the invention comprises the partial removal of solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH) 2 .
- the present solvent especially water
- the present invention therefore preferably relates to process (1 ) according to the invention wherein the solvent is partially removed in step (B) under elevated temperature and/or elevated pressure.
- elevated temperature is understood to mean a temperature which is above room temperature, for example 30 to 100°C, preferably 30 to 90°C, more preferably 40 to 80°C.
- reduced pressure is understood to mean a pressure which is below atmospheric pressure, for example less than 1000 mbar (a), preferably 10 to 900 mbar (a), more preferably 100 to 800 mbar (a).
- step (B) of the process according to the invention is effected preferably in a distillation apparatus or a rotary evaporator. These apparatuses are known to those skilled in the art.
- partial removal is understood to mean that the present solvent is not removed completely but only partially; for example 20 to 90% by weight, preferably 30 to 80% by weight, more preferably 40 to 70% by weight, for example 50% by weight, of the solvent used in step (A) is removed in step (B).
- step (B) of process (1 ) according to the invention generally not only a portion of the solvent is removed, but also ammonia present in solution or in the [(OH) x (NH 3 ) y Zn] z complex formed where x, y and z are each independently 0.01 to 10. Therefore, the complex mentioned forms, in step (B), a solid which comprises Zn(OH) 2 , optionally in combination with ZnO.
- a suspension of Zn(OH) 2 in a solvent, preferably water, is therefore obtained.
- Step (C) Step (C) of process (1 ) according to the invention comprises the removal of solid Zn(OH) 2 from the suspension from step (B).
- Step (C) of process (1 ) according to the invention can generally be effected by all processes known to those skilled in the art, for example filtration, decantation, centrifugation, more preferably filtration.
- step (C) of the process according to the invention solid Zn(OH) 2 and solvent, preferably water, are obtained separately from one another.
- the Zn(OH) 2 obtained is dried after the removal, for example under elevated temperature and/or reduced pressure. Particular preference is given to drying in step (C) at a temperature of 20 to 30°C and a pressure below atmospheric pressure, for example at 20 to 800 mbar (a).
- Step (D) of process (1 ) according to the invention comprises the contacting of the Zn(OH) 2 from step (C) with ammonia in at least one solvent, in order to obtain a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 with the concentration c2.
- Step (D) of process (1 ) according to the invention can be performed in all reactors known to those skilled in the art, for example stirred reactors. According to the invention, step (D) can be performed continuously or batchwise.
- the solvent is preferably an aqueous solvent, for example an alcoholic aqueous solution or water, more preferably water.
- ammonia is used in aqueous solution in each case, preferably in water.
- the present invention therefore preferably relates to the process according to the invention wherein the solvent in steps (A) and (D) is an aqueous solution or water.
- Ammonia is present in the aqueous solution used with preference in step (D) in a concentration of 1 to 18 mol/l, preferably 2 to 15 mol/l, more preferably 3 to 12 mol/l, based in each case on the overall solution.
- an aqueous ammonia solution which has a higher or lower concentration than the aqueous ammonia solution used in step (A) is used in step (D).
- an aqueous ammonia solution which has an ammonia content of 15 to 35% by weight, preferably 20 to 30% by weight, for example 25% by weight.
- a sufficient amount of the ammonia solution is added to the solid zinc hydroxide Zn(OH) 2 that a reaction mixture is obtained in which zinc hydroxide is present generally with a concentration of 0.1 to 1 mol/L, preferably 0.25 to 0.75 mol/L, more preferably 0.33 to 0.6 mol/L. It is optionally also possible to work directly in liquid ammonia.
- the reaction mixture thus obtained is then stirred at a temperature of generally 10 to 120°C, preferably 10 to 60°C, more preferably 20 to 30°C.
- the suspension is stirred until the desired conversion is obtained, for example for 2 to 72 h, preferably 2 to 24 h.
- step (D) of process (1 ) according to the invention a solution of electrically uncharged [(OH ) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 in the solvent, especially water, is present.
- the solution obtained can optionally be purified, for example by filtration.
- x, y, and z are generally each independently 0.01 to 10, preferably each independently 1 to 6.
- z 1 .
- x 2.
- y 2 or 4.
- x, y and z may each independently be either integers or fractions.
- step (A) can also or exclusively be added in step (D).
- the dopant metals mentioned are added exclusively in step (D) and not in step (A).
- the solution obtained in step (D) of process (1 ) according to the invention comprises electrically uncharged [(OH ) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 in a concentration c2.
- concentration c2 is greater than concentration c1 .
- the present invention preferably relates to the process according to the invention wherein concentration c2 is greater than concentration c1.
- Concentration c2 is generally 0.6 to 6.5 g of Zn/100 g of solution, preferably 1 .6 to 5 g of Zn/100 g of solution, more preferably 2.2 to 3.9 g of Zn/100 g of solution, for example 3.0 g of Zn/100 g of solution.
- the present invention also relates to a solution of electrically uncharged [(OH) x (NH 3 )yZn] z where x, y and z are each independently 0.01 to 10 in a solvent, preferably water, preparable, preferably prepared, by process (1 ) according to the invention.
- the electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 is present in a concentration of generally 0.6 to 6.5 g of Zn/100 g of solution, preferably 1 .6 to 5.0 g of Zn/100 g of solution, more preferably 2.2 to 3.9 g of Zn/100 g of solution, for example 3.0 g of Zn/100 g of solution.
- the present invention also relates to a solution of electrically uncharged [(OH) x (NH 3 )yZn] z where x, y and z are each independently 0.01 to 10 in a solvent, preferably water, in a concentration of 1 .6 to 5.0 g of Zn/100 g of solution, preferably 2.2 to 3.9 g of Zn/100 g of solution, for example 3.0 g of Zn/100 g of solution.
- the solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 in a concentration c2 obtained in step (D) of process (1 ) according to the invention can be used directly for coating of substrates in order to form a layer of ZnO on these substrates.
- this can be accomplished by process (2) according to the invention comprising at least steps (E), (F) and (G).
- the solution preparable in accordance with the invention can, for example, be used particularly advantageously for the coating of substrates, since a large amount of the corresponding compound can be applied to the substrate in one step, such that a ZnO layer with high layer thickness can be obtained in the subsequent thermal treatment and the associated conversion of electrically uncharged [(OH ) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 to semiconductive ZnO.
- the solutions of precursor compounds for semiconductive materials obtainable by the prior art comprise corresponding precursor compounds only in low concentrations, such that several steps are needed in corresponding coating processes in order to achieve a desired layer thickness.
- the high concentration c2 in accordance with the invention can be achieved by the inventive combination of steps (B) to (D).
- the partial removal of the solvent makes it possible to obtain a particularly reactive Zn(OH) 2 , which can be converted in the subsequent step (D) in a greater proportion to the soluble electrically uncharged complex [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 than is possible with Zn(OH) 2 in accordance with the prior art.
- the present invention also relates to process (2) according to the invention for producing a layer comprising at least zinc oxide on a substrate, comprising at least the steps of:
- step (G) thermally treating the substrate from step (F) at a temperature of 20 to 450°C in order to convert electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 to zinc oxide.
- Process (2) serves to produce a layer comprising at least zinc oxide on a substrate.
- process (2) according to the invention to coat all substrates known to those skilled in the art, for example silicon wafers, glass, ceramics, metals, metal oxides, semimetal oxides, polymers such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonates, polyacrylates, polystyrenes, polysulfones, etc.
- substrates for example silicon wafers, glass, ceramics, metals, metal oxides, semimetal oxides, polymers such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonates, polyacrylates, polystyrenes, polysulfones, etc.
- the substrate is mechanically flexible and comprises at least one polymer, for example selected from the group consisting of polyesters, for example polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimides, polycarbonates, polysulfones and mixtures thereof.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- polyimides polyimides
- polycarbonates polysulfones and mixtures thereof.
- the present invention therefore preferably relates to the process according to the invention wherein the substrate is mechanically flexible and comprises at least one polymer.
- the layer which comprises at least one semiconductive metal oxide and is produced on the substrate by the process according to the invention generally has a thickness of 5 to 250 nm, preferably 5 to 100 nm.
- Step (E) of the process according to the invention comprises the preparation of a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 by process (1 ) according to the invention.
- Step (E) of process (2) according to the invention comprises at least steps (A), (B), (C) and (D) of process (1 ) according to the invention. Therefore, the statements made with regard to steps (A), (B), (C) and (D) apply to step (E).
- the present invention therefore relates, in one embodiment, also preferably to the process according to the invention wherein the ZnO is doped with metal cations selected from the group consisting of Al 3+ , ln 3+ , Sn 4+ , Ga 3+ and mixtures thereof.
- the present invention therefore relates, in a preferred embodiment, to process (2) according to the invention for producing a layer comprising at least zinc oxide on a substrate, comprising at least the steps of:
- step (B) removing some solvent from the solution from step (A) in order to obtain a suspension comprising Zn(OH) 2 ,
- step (D) contacting the Zn(OH) 2 from step (C) with ammonia in at least one solvent in order to obtain a solution of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 with the concentration c2,
- step (G) thermally treating the substrate from step (F) at a temperature of 20 to 450°C in order to convert electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 to zinc oxide.
- the solution obtained after step (D) is used directly in step (F) of the invention.
- Step (F) of process (2) according to the invention comprises the application of the solution from step (E) or (D) to the substrate.
- step (F) can be performed by all methods known to those skilled in the art which are suitable for applying the solution obtained from step (E) or (D) to the substrate, for example spin-coating, spray-coating, dip-coating, drop-casting or printing, for example inkjet printing, flexographic printing or gravure printing.
- the present invention therefore relates, in a preferred embodiment, to the process according to the invention wherein the solution from step (E) or (D) is applied in step (F) by spin-coating, spray-coating, dip-coating, drop-casting and/or printing.
- step (E) or (D) is applied in step (F) of the process according to the invention by spin-coating or inkjet printing. These processes are known per se to those skilled in the art.
- the present invention therefore also relates to the process according to the invention wherein the solution from step (E) or (D) is applied in step (F) by spin-coating.
- step (F) preference is given to applying a solution of an appropriate concentration to the substrate such that the thermal treatment in step (G) gives a ZnO layer with the desired layer thickness.
- Step (G) of process (2) according to the invention comprises the thermal treatment of the substrate from step (F) at a temperature of 20 to 450°C in order to convert electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 to zinc oxide.
- the temperature in step (G) of the process according to the invention is less than 200°C.
- step (G) can be performed in all apparatuses known to those skilled in the art for heating substrates, for example a hotplate, an oven, a drying cabinet, a hot air gun, a belt calciner or a climate-controlled cabinet with or without a heating ramp.
- step (G) of the process according to the invention is performed at a relatively low temperature of, for example, 20 to 50°C
- the decomposition to zinc oxides is effected preferably by means of catalytic activation, for example by contacting with reactive gas flow or by irradiation.
- a catalytic activation is also possible at higher temperatures, but is not preferred.
- step (G) electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10, which has been applied with the solution from step (E) in step (F), is converted to zinc oxide.
- the electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 can be converted to zinc oxide preferably at a temperature below 200°C, more preferably below 150°C, even more preferably below 130°C, especially below 100°C, such that it is possible to use, for example, polymer substrates which are not deformed or thermally degraded during the preparation of zinc oxide.
- a further advantage is that, due to the electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 used in the thermal treatment in step (G) of the process according to the invention, only volatile by-products are formed, which thus escape in gaseous form and do not remain as troublesome impurities in the layer formed.
- a further advantage of process (2) according to the invention is that the elevated concentration of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 in the solution from step (E) or (D) allows a sufficient amount of electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 to be applied to the substrate in a few steps, preferably in one step, that a sufficient layer thickness of ZnO can be obtained.
- step (G) The electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 used in accordance with the invention is generally converted in step (G) to zinc oxide and volatile compounds, or mixtures thereof. More particularly, after the thermal treatment in step (G), no by-products of the precursor compounds remain in the zinc oxide layer formed, for example counterions such as halide ions, nitrate ions, cations such as Na + , K + , or uncharged ligands.
- counterions such as halide ions, nitrate ions, cations such as Na + , K + , or uncharged ligands.
- a further advantage of the electrically uncharged [(OH) x (NH 3 ) y Zn] z where x, y and z are each independently 0.01 to 10 used in accordance with the invention is that it can generally be converted to the corresponding metal oxide in step (G) of the process according to the invention without addition of further additives, since it already has the oxygen needed for the conversion to the corresponding oxides in the ligand sphere. Since no further additives need be added, no by-products of these additives remain in the layer formed. It is likewise advantageous that steps (E), (F) and (G) of the production process can be performed under ambient conditions (atmospheric oxygen, etc.).
- the present invention also relates to a layer comprising at least zinc oxide on a substrate, producible, preferably produced, by the process according to the invention.
- a layer thickness possible additives, doping elements, substrates and further details of the inventive layer, the statements made above apply.
- Figure 1 shows a representative output curve (OC) of a field-effect transistor according to example 3.
- FIG. 2 shows a representative transfer curve (TC) of a field-effect transistor according to example 3.
- TC transfer curve
- an approx. 7 molar NH 3 solution is prepared from 500 g of 25% NH 3 solution and 51 1 g of water.
- the ZnO is initially charged in a 1000 ml Duran glass bottle, then 1000 ml of NH 3 solution prepared are added and everything is stirred on a magnetic stirrer overnight.
- the concentration is determined by elemental analysis by means of atomic emission spectroscopy.
- This solution is concentrated on a rotary evaporator to a volume of approx. 500 ml, which forms a white suspension.
- the suspension is filtered with suction through a P4 suction filter, and the white powder obtained is dried at room temperature and 500 mbar in a vacuum drying cabinet overnight.
- the dried powder is initially charged in a 250 ml Duran glass bottle and 200 g of NH 3 (25% solution) are added, and the mixture is again stirred overnight. The solids still present are allowed to settle. A sample is taken from the clear supernatant solution, forced through a Milipore filter and analyzed.
- the solution of the Zn(OH) x (NH 3 ) y complex has a Zn content of 3.0 g of Zn/100 g of solution, determined by elemental analysis by means of atomic emission spectroscopy.
- Example 2 Production of a ZnO layer using the solution from example 1
- aqueous Zn(OH) 2 (NH 3 ) 4 solution with a concentration of 1 g of Zn/100 g of solution, prepared according to example 1 , step 1 is applied to a cleaned silicon wafer with a silicon dioxide layer by spin-coating (3000 rps, 30 s), and heated on a hot plate at 150°C for 1 h.
- the layer thickness obtained is 12 nm (determined by means of atomic force microscopy).
- An aqueous Zn(OH) 2 (NH 3 ) 4 solution with a concentration of 3 g of Zn/100 g of solution, prepared according to example 1 , step 2, is applied to a cleaned silicon wafer with a silicon dioxide layer by spin-coating (3000 rps, 30 s), and heated on a hot plate at 150°C for 1 h.
- the layer thickness obtained is 40 nm (determined by means of atomic force microscopy).
- Example 3 Production of a ZnO field-effect transistor on polyethylene naphthalate (PEN) film substrate comprising a ZnO semi conducting-material processed from solution (example 1 ) and silsesquioxane dielectric processed from solution.
- PEN polyethylene naphthalate
- GR 150 glass resin (Techneglass, Inc.) consisting of methyl- and phenylsilsesquioxane units in ethyl lactate is spun (60 s, 3000 rpm) on to a cleaned PEN film substrate (Teonex, DuPont Teijin Films) with a 75 nm aluminum gate (applied by thermal vapor deposition), and then heated at 80°C for 1 minute and at 150°C for 1 hour.
- PEN film substrate Teonex, DuPont Teijin Films
- the aqueous Zn(OH) 2 (NH 3 )4 solution with a concentration of 3 g of Zn/100 g of solution, prepared according to example 1 , step 2 is spun on (30 s, 3000 rpm) and heated at 150°C for 1 h (heating ramp for 30 minutes).
- Source/drain contacts (channel width/length ratio: 20) are obtained by thermal vapor deposition of aluminum. The following average parameters are determined: Mobility ⁇ : 7 * 10 "2 cm 2 /(V * s)
- an approx. 7 molar NH 3 solution is prepared from 600 g of 25% NH 3 solution and 613.4 g of water.
- the ZnO is initially charged in a 1000 ml Duran glass bottle, then 1000 ml of NH 3 solution prepared are added and everything is stirred on a magnetic stirrer overnight.
- the concentration is determined by elemental analysis by means of atomic emission spectroscopy.
- This solution is concentrated on a rotary evaporator to a volume of approx. 500 ml, which forms a white suspension.
- the suspension is filtered with suction through a P4 suction filter, and the white powder obtained is dried at room temperature and 500 mbar in a vacuum drying cabinet overnight.
- the dried powder is initially charged in a 250 ml Duran glass bottle and 200 ml of the approx. 7 molar NH 3 solution are added, and the mixture is again stirred overnight.
- the clear solution is forced through a Milipore filter and analyzed.
- the solution of the Zn(OH) x (NH 3 ) y complex has a Zn content of 2.9 g of Zn/100 g of solution, determined by elemental analysis by means of atomic emission spectroscopy.
- Example 4 shows that a highly concentrated solution is also obtained when an approx. 7 molar NH 3 solution is used in step (D) of the process according to the invention.
- Step 1
- an approx. 7 molar NH 3 solution is prepared from 500 g of 25% NH 3 solution and 51 1 g of water.
- the ZnO is initially charged in a 1000 ml Duran glass bottle, then 1000 ml of NH 3 solution prepared are added and everything is stirred on a magnetic stirrer overnight.
- the concentration is determined by elemental analysis by means of atomic emission spectroscopy.
- This solution is concentrated on a rotary evaporator to a volume of approx. 500 ml, which forms a white suspension.
- the suspension is filtered with suction through a P4 suction filter, and the white powder obtained is dried at room temperature and 500 mbar in a vacuum drying cabinet overnight.
- the dried powder is initially charged in a 250 ml Duran glass bottle and 200 g of NH 3 (25% solution) are added, and the mixture is again stirred overnight. The solids still present are allowed to settle. A sample is taken from the clear supernatant solution, forced through a Milipore filter and analyzed.
- the solution of the Zn(OH) x (NH 3 ) y complex has a Zn content of 2.9 g of Zn/100 g of solution, determined by elemental analysis by means of atomic emission spectroscopy.
- Example 5 shows that a highly concentrated solution is also obtained when ZnO from a different source is used in step (A) of the process according to the invention.
- Comparative example 1 shows that, in the case of direct dissolution of ZnO with aqueous NH 3 solution, only a solution with low concentration of the zinc complex is obtained.
- Comparative example 2 Preparation of a solution of Zn(OH) 2 (NH 3 ) 4 Feedstock:
- the 25% aqueous NH 3 solution and 10 g of ZnO are introduced into an autoclave. This mixture is stirred in an autoclave at a temperature of 80°C and a pressure of 20 bar for 16 h. After cooling, the solids still present are allowed to settle. A sample is taken from the clear supernatant solution, forced through a Milipore filter and analyzed.
- the solution of the Zn(OH) x (NH 3 ) y complex has a Zn content of only 1 .0 g of Zn/100 g of solution, determined by elemental analysis by means of atomic emission spectroscopy.
- Comparative example 2 shows that, even under more severe pressure and temperature conditions, only a solution with a low concentration of the zinc complex is obtained.
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Abstract
Description
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Priority Applications (5)
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US13/582,108 US8691168B2 (en) | 2010-04-28 | 2011-04-27 | Process for preparing a zinc complex in solution |
EP11774513.3A EP2563719A4 (en) | 2010-04-28 | 2011-04-27 | Process for preparing a zinc complex in solution |
JP2013506792A JP2013525250A (en) | 2010-04-28 | 2011-04-27 | Method for preparing zinc complexes in solution |
KR1020127031150A KR20130057439A (en) | 2010-04-28 | 2011-04-27 | Process for preparing a zinc complex in solution |
CN201180020432.3A CN102858690B (en) | 2010-04-28 | 2011-04-27 | Process for preparing a zinc complex in solution |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013190992A1 (en) * | 2012-06-20 | 2013-12-27 | 富士フイルム株式会社 | Method for manufacturing thin film transistor |
WO2014007250A1 (en) * | 2012-07-05 | 2014-01-09 | 株式会社ニコン | Method for producing zinc oxide thin film, method for manufacturing thin film transistor, zinc oxide thin film, thin film transistor, and transparent oxide wiring line |
TWI629245B (en) * | 2012-04-17 | 2018-07-11 | 贏創德固賽有限責任公司 | Formulations comprising ammoniacal hydroxozinc compounds |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011073044A1 (en) * | 2009-12-18 | 2011-06-23 | Basf Se | Metal oxide field effect transistors on a mechanically flexible polymer substrate having a dielectric that can be processed from solution at low temperatures |
EP2807670A1 (en) * | 2012-01-27 | 2014-12-03 | Merck Patent GmbH | Method for producing electrically semiconductive or conductive layers with improved conductivity |
US10060033B2 (en) * | 2013-09-03 | 2018-08-28 | Merck Patent Gmbh | Precursors for the production of thin oxide layers and the use thereof |
CN108912021A (en) * | 2018-08-08 | 2018-11-30 | 美轲(广州)化学股份有限公司 | The preparation method of alkyl hydrosulfide zinc |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2194827A (en) * | 1936-06-29 | 1940-03-26 | Gordon Aaron | Impregnating material for preserving wood |
JPS6232161A (en) * | 1985-08-06 | 1987-02-12 | Adogaa Kogyo Kk | Ink composition |
JPS6347342A (en) * | 1986-08-18 | 1988-02-29 | Sumitomo Metal Ind Ltd | Separation of zn from material containing zinc and lead |
JPH0850815A (en) * | 1994-04-21 | 1996-02-20 | Sekisui Chem Co Ltd | Transparent conductor and manufacture thereof |
JPH07331450A (en) * | 1994-06-06 | 1995-12-19 | Japan Energy Corp | Formation of coating film of electrically conductive metal oxide |
US6238808B1 (en) * | 1998-01-23 | 2001-05-29 | Canon Kabushiki Kaisha | Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device |
JP3890403B2 (en) * | 2001-12-04 | 2007-03-07 | 独立行政法人物質・材料研究機構 | Nitrogen-containing zinc oxide powder and method for producing the same |
CN1843935A (en) * | 2006-05-15 | 2006-10-11 | 中国科学院上海硅酸盐研究所 | A tetrapod-like nanorod of zinc oxide, its preparation method and apparatus |
US20080286907A1 (en) | 2007-05-16 | 2008-11-20 | Xerox Corporation | Semiconductor layer for thin film transistors |
JP2008297168A (en) * | 2007-05-31 | 2008-12-11 | National Institute Of Advanced Industrial & Technology | ZnO WHISKER FILM AND ITS PREPARATION METHOD |
DE102007043920A1 (en) | 2007-07-17 | 2009-01-22 | Merck Patent Gmbh | Functional material for printed electronic components |
JP5131824B2 (en) * | 2007-08-17 | 2013-01-30 | 国立大学法人 千葉大学 | Method for producing sol |
CN101970709A (en) * | 2007-12-19 | 2011-02-09 | 卡洛·塔利亚尼 | Method for depositing metal oxide films |
EP2252728B1 (en) * | 2008-02-21 | 2012-12-12 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH | Electrodeposition method for the production of nanostructured zno |
WO2010026102A1 (en) | 2008-09-04 | 2010-03-11 | Basf Se | Modified particles and dispersions comprising said particles |
CN101476111A (en) * | 2009-01-19 | 2009-07-08 | 武汉大学 | Transparent conductive film and preparation thereof |
US8877657B2 (en) | 2009-04-28 | 2014-11-04 | Basf Se | Process for producing semiconductive layers |
JP5634511B2 (en) | 2009-06-16 | 2014-12-03 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Precursor compounds susceptible to thermal chemical changes to improve interparticle contact and fill gaps in semiconducting metal oxide particle layers |
CN101624208A (en) * | 2009-07-31 | 2010-01-13 | 天津大学 | Method for preparing zinc oxide nanowire array based on coordination chemical reaction theory |
-
2011
- 2011-04-27 WO PCT/IB2011/051816 patent/WO2011135514A2/en active Application Filing
- 2011-04-27 KR KR1020127031150A patent/KR20130057439A/en not_active Application Discontinuation
- 2011-04-27 JP JP2013506792A patent/JP2013525250A/en active Pending
- 2011-04-27 CN CN201180020432.3A patent/CN102858690B/en not_active Expired - Fee Related
- 2011-04-27 EP EP11774513.3A patent/EP2563719A4/en not_active Withdrawn
- 2011-04-27 US US13/582,108 patent/US8691168B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
See references of EP2563719A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI629245B (en) * | 2012-04-17 | 2018-07-11 | 贏創德固賽有限責任公司 | Formulations comprising ammoniacal hydroxozinc compounds |
WO2013190992A1 (en) * | 2012-06-20 | 2013-12-27 | 富士フイルム株式会社 | Method for manufacturing thin film transistor |
JP2014003244A (en) * | 2012-06-20 | 2014-01-09 | Fujifilm Corp | Manufacturing method of thin film transistor, thin film transistor, display device, image sensor and x-ray sensor |
WO2014007250A1 (en) * | 2012-07-05 | 2014-01-09 | 株式会社ニコン | Method for producing zinc oxide thin film, method for manufacturing thin film transistor, zinc oxide thin film, thin film transistor, and transparent oxide wiring line |
JPWO2014007250A1 (en) * | 2012-07-05 | 2016-06-02 | 株式会社ニコン | Zinc oxide thin film manufacturing method, thin film transistor manufacturing method, zinc oxide thin film, thin film transistor, and transparent oxide wiring |
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KR20130057439A (en) | 2013-05-31 |
WO2011135514A3 (en) | 2012-01-19 |
CN102858690B (en) | 2014-11-05 |
EP2563719A4 (en) | 2017-03-08 |
US8691168B2 (en) | 2014-04-08 |
EP2563719A2 (en) | 2013-03-06 |
CN102858690A (en) | 2013-01-02 |
JP2013525250A (en) | 2013-06-20 |
US20120328509A1 (en) | 2012-12-27 |
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