WO2011132867A3 - Sputter target having stepped structure and sputtering device using same - Google Patents

Sputter target having stepped structure and sputtering device using same Download PDF

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Publication number
WO2011132867A3
WO2011132867A3 PCT/KR2011/002380 KR2011002380W WO2011132867A3 WO 2011132867 A3 WO2011132867 A3 WO 2011132867A3 KR 2011002380 W KR2011002380 W KR 2011002380W WO 2011132867 A3 WO2011132867 A3 WO 2011132867A3
Authority
WO
WIPO (PCT)
Prior art keywords
stepped structure
sputter target
sputtering device
present
sputtered
Prior art date
Application number
PCT/KR2011/002380
Other languages
French (fr)
Korean (ko)
Other versions
WO2011132867A2 (en
Inventor
박영춘
김진택
Original Assignee
Park Young-Chun
Kim Jin-Taek
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Park Young-Chun, Kim Jin-Taek filed Critical Park Young-Chun
Publication of WO2011132867A2 publication Critical patent/WO2011132867A2/en
Publication of WO2011132867A3 publication Critical patent/WO2011132867A3/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/046Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

According to the present invention, a sputter target comprises: a plurality of concave parts formed to have constant depth (H) and width (L) inward from the surface of the sputter target, which faces a plasma discharge space, and to be surrounded by lateral walls; and a stepped structure constructed by regularly arranging the plurality of concave parts. According to the present invention, the sputter target having a stepped structure is configured such that the directionality of a sputtered particle beam is adjusted by the size of the stepped structure of a surface, which makes it possible to deposit a high-stepped structure required in a process. In addition, the sputtering device according to the present invention is processed such that the target itself supplied with power has a stepped structure, so that it is possible to adjust the linearity of a particle sputtered by the target itself, without a limiter provided to improve the linearity of sputtered particles.
PCT/KR2011/002380 2010-04-21 2011-04-05 Sputter target having stepped structure and sputtering device using same WO2011132867A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100037105A KR20110117565A (en) 2010-04-21 2010-04-21 Sputter target having novel structure and sputtering device comprising the same
KR10-2010-0037105 2010-04-21

Publications (2)

Publication Number Publication Date
WO2011132867A2 WO2011132867A2 (en) 2011-10-27
WO2011132867A3 true WO2011132867A3 (en) 2012-01-26

Family

ID=44834592

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/002380 WO2011132867A2 (en) 2010-04-21 2011-04-05 Sputter target having stepped structure and sputtering device using same

Country Status (2)

Country Link
KR (1) KR20110117565A (en)
WO (1) WO2011132867A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117276A (en) * 1984-11-14 1986-06-04 Hitachi Ltd Target for sputtering
JPS61291964A (en) * 1985-06-17 1986-12-22 Anelva Corp Resin target for sputtering
JPH05125531A (en) * 1990-10-23 1993-05-21 Internatl Business Mach Corp <Ibm> Sputtering deposition apparatus and sputtering cathode
JPH05230642A (en) * 1992-02-21 1993-09-07 Nissin High Voltage Co Ltd Sputtering target
KR100231397B1 (en) * 1991-01-28 1999-11-15 튜그룰 야사르 Target for cathode sputtering
JP2005126783A (en) * 2003-10-24 2005-05-19 Olympus Corp Sputtering target

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61117276A (en) * 1984-11-14 1986-06-04 Hitachi Ltd Target for sputtering
JPS61291964A (en) * 1985-06-17 1986-12-22 Anelva Corp Resin target for sputtering
JPH05125531A (en) * 1990-10-23 1993-05-21 Internatl Business Mach Corp <Ibm> Sputtering deposition apparatus and sputtering cathode
KR100231397B1 (en) * 1991-01-28 1999-11-15 튜그룰 야사르 Target for cathode sputtering
JPH05230642A (en) * 1992-02-21 1993-09-07 Nissin High Voltage Co Ltd Sputtering target
JP2005126783A (en) * 2003-10-24 2005-05-19 Olympus Corp Sputtering target

Also Published As

Publication number Publication date
WO2011132867A2 (en) 2011-10-27
KR20110117565A (en) 2011-10-27

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