WO2011132867A3 - Sputter target having stepped structure and sputtering device using same - Google Patents
Sputter target having stepped structure and sputtering device using same Download PDFInfo
- Publication number
- WO2011132867A3 WO2011132867A3 PCT/KR2011/002380 KR2011002380W WO2011132867A3 WO 2011132867 A3 WO2011132867 A3 WO 2011132867A3 KR 2011002380 W KR2011002380 W KR 2011002380W WO 2011132867 A3 WO2011132867 A3 WO 2011132867A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stepped structure
- sputter target
- sputtering device
- present
- sputtered
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title abstract 2
- 239000002245 particle Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
According to the present invention, a sputter target comprises: a plurality of concave parts formed to have constant depth (H) and width (L) inward from the surface of the sputter target, which faces a plasma discharge space, and to be surrounded by lateral walls; and a stepped structure constructed by regularly arranging the plurality of concave parts. According to the present invention, the sputter target having a stepped structure is configured such that the directionality of a sputtered particle beam is adjusted by the size of the stepped structure of a surface, which makes it possible to deposit a high-stepped structure required in a process. In addition, the sputtering device according to the present invention is processed such that the target itself supplied with power has a stepped structure, so that it is possible to adjust the linearity of a particle sputtered by the target itself, without a limiter provided to improve the linearity of sputtered particles.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100037105A KR20110117565A (en) | 2010-04-21 | 2010-04-21 | Sputter target having novel structure and sputtering device comprising the same |
KR10-2010-0037105 | 2010-04-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011132867A2 WO2011132867A2 (en) | 2011-10-27 |
WO2011132867A3 true WO2011132867A3 (en) | 2012-01-26 |
Family
ID=44834592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/002380 WO2011132867A2 (en) | 2010-04-21 | 2011-04-05 | Sputter target having stepped structure and sputtering device using same |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20110117565A (en) |
WO (1) | WO2011132867A2 (en) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61117276A (en) * | 1984-11-14 | 1986-06-04 | Hitachi Ltd | Target for sputtering |
JPS61291964A (en) * | 1985-06-17 | 1986-12-22 | Anelva Corp | Resin target for sputtering |
JPH05125531A (en) * | 1990-10-23 | 1993-05-21 | Internatl Business Mach Corp <Ibm> | Sputtering deposition apparatus and sputtering cathode |
JPH05230642A (en) * | 1992-02-21 | 1993-09-07 | Nissin High Voltage Co Ltd | Sputtering target |
KR100231397B1 (en) * | 1991-01-28 | 1999-11-15 | 튜그룰 야사르 | Target for cathode sputtering |
JP2005126783A (en) * | 2003-10-24 | 2005-05-19 | Olympus Corp | Sputtering target |
-
2010
- 2010-04-21 KR KR1020100037105A patent/KR20110117565A/en not_active Application Discontinuation
-
2011
- 2011-04-05 WO PCT/KR2011/002380 patent/WO2011132867A2/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61117276A (en) * | 1984-11-14 | 1986-06-04 | Hitachi Ltd | Target for sputtering |
JPS61291964A (en) * | 1985-06-17 | 1986-12-22 | Anelva Corp | Resin target for sputtering |
JPH05125531A (en) * | 1990-10-23 | 1993-05-21 | Internatl Business Mach Corp <Ibm> | Sputtering deposition apparatus and sputtering cathode |
KR100231397B1 (en) * | 1991-01-28 | 1999-11-15 | 튜그룰 야사르 | Target for cathode sputtering |
JPH05230642A (en) * | 1992-02-21 | 1993-09-07 | Nissin High Voltage Co Ltd | Sputtering target |
JP2005126783A (en) * | 2003-10-24 | 2005-05-19 | Olympus Corp | Sputtering target |
Also Published As
Publication number | Publication date |
---|---|
WO2011132867A2 (en) | 2011-10-27 |
KR20110117565A (en) | 2011-10-27 |
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