WO2011131388A2 - Procédé de réalisation d'une pile solaire et pile solaire réalisée selon le procédé - Google Patents
Procédé de réalisation d'une pile solaire et pile solaire réalisée selon le procédé Download PDFInfo
- Publication number
- WO2011131388A2 WO2011131388A2 PCT/EP2011/052503 EP2011052503W WO2011131388A2 WO 2011131388 A2 WO2011131388 A2 WO 2011131388A2 EP 2011052503 W EP2011052503 W EP 2011052503W WO 2011131388 A2 WO2011131388 A2 WO 2011131388A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- main surface
- aluminum
- paste
- silicon substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 73
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 14
- 238000007496 glass forming Methods 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 238000002161 passivation Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000002787 reinforcement Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000000608 laser ablation Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 239000000443 aerosol Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 241001631457 Cannula Species 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 230000005496 eutectics Effects 0.000 abstract description 14
- 239000004411 aluminium Substances 0.000 abstract 4
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 98
- 230000008569 process Effects 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/30—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes using a layer of powder or paste on the surface
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- FIGS. 1-14 are cross-sectional views of a silicon substrate after various steps of a method according to the invention
- the first main surface 2 may be doped with a selective doping, i. H. a doping with a higher dopant concentration and / or a deeper into the silicon substrate 1-rich doping layer, in particular below the metal contact strips and / or bus bars, are provided or have such.
- a selective doping i. H. a doping with a higher dopant concentration and / or a deeper into the silicon substrate 1-rich doping layer, in particular below the metal contact strips and / or bus bars, are provided or have such.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne un procédé de réalisation d'une pile solaire à partir d'un substrat de silicium (1) dopé p ou dopé n qui présente une première surface principale (2) qui, en cours d'utilisation, sert de côté d'incidence lumineuse, et une deuxième surface principale (3) qui sert de côté arrière. Selon l'invention, le procédé comprend les étapes suivantes : application d'une couche mince (7) qui comprend principalement de l'aluminium, sur la deuxième surface principale (3); application et séchage d'une pâte vitrifiante diélectrique (11) sur la deuxième couche principale (2) pour recouvrir la couche mince d'aluminium (7); chauffage et/ou frittage de la pâte (11) sur la deuxième surface principale (3), notamment à des températures supérieures à environ 577°C, pour produire une couche dopée en aluminium (8) dans la deuxième surface principale (3); et élimination de la couche vitrifiée (12) formée lors du chauffage et/ou frittage, et d'une couche eutectique aluminium-silicium formée lors du chauffage et/ou frittage, de la deuxième couche principale (3), ce qui permet d'exposer la couche dopée en aluminium (8).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11704452.9A EP2561557B1 (fr) | 2010-04-20 | 2011-02-21 | Procédé de réalisation d'une cellule solaire |
| US13/642,099 US8962381B2 (en) | 2010-04-20 | 2011-02-21 | Method for manufacturing a solar cell and a solar cell manufactured according to this method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010027940A DE102010027940A1 (de) | 2010-04-20 | 2010-04-20 | Verfahren zur Herstellung einer Solarzelle sowie nach diesem Verfahren hergestellte Solarzelle |
| DE102010027940.4 | 2010-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2011131388A2 true WO2011131388A2 (fr) | 2011-10-27 |
| WO2011131388A3 WO2011131388A3 (fr) | 2012-03-15 |
Family
ID=44625169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2011/052503 WO2011131388A2 (fr) | 2010-04-20 | 2011-02-21 | Procédé de réalisation d'une pile solaire et pile solaire réalisée selon le procédé |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8962381B2 (fr) |
| EP (1) | EP2561557B1 (fr) |
| DE (1) | DE102010027940A1 (fr) |
| WO (1) | WO2011131388A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106993404A (zh) * | 2017-05-02 | 2017-07-28 | 卜庆革 | 柔性轻量化耐高温防火防电磁辐射损伤电磁屏蔽的镀镍银玻璃纤维、布及方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010028189B4 (de) * | 2010-04-26 | 2018-09-27 | Solarworld Industries Gmbh | Solarzelle |
| US20120318336A1 (en) | 2011-06-17 | 2012-12-20 | International Business Machines Corporation | Contact for silicon heterojunction solar cells |
| US8637948B2 (en) * | 2012-01-10 | 2014-01-28 | Samsung Sdi Co., Ltd. | Photovoltaic device |
| DE102013204471A1 (de) | 2013-03-14 | 2014-09-18 | Robert Bosch Gmbh | Verfahren zum Herstellen von Elektroden einer Fotovoltaikzelle und Fotovoltaikzelle |
| US8975175B1 (en) * | 2013-06-28 | 2015-03-10 | Sunpower Corporation | Solderable contact regions |
| CN106981543B (zh) * | 2017-04-05 | 2018-05-22 | 中国电子科技集团公司第四十四研究所 | 采用铝硅共晶薄膜辅助干法刻蚀制备黑硅层的方法 |
| US11107942B2 (en) | 2019-04-30 | 2021-08-31 | Utica Leaseco, Llc | Sputtered then evaporated back metal process for increased throughput |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3067071A (en) * | 1960-01-04 | 1962-12-04 | Ibm | Semiconductor devices and methods of applying metal films thereto |
| DE3520699A1 (de) * | 1985-06-10 | 1986-01-23 | BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau | Verfahren zum selektiven diffundieren von aluminium in ein siliziumsubstrat |
| JP3922334B2 (ja) * | 2000-07-12 | 2007-05-30 | サンケン電気株式会社 | 半導体装置の製造方法 |
| JP4837662B2 (ja) * | 2005-06-22 | 2011-12-14 | 京セラ株式会社 | 太陽電池素子の製造方法 |
| DE102008013446A1 (de) * | 2008-02-15 | 2009-08-27 | Ersol Solar Energy Ag | Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren |
| DE102009034594A1 (de) * | 2009-02-24 | 2010-08-26 | Bosch Solar Energy Ag | Verfahren zur Herstellung einer kristallinen Silizium-Solarzelle mit ganzflächiger, legierter Rückseitenmetallisierung |
| US8535971B2 (en) * | 2010-02-12 | 2013-09-17 | Heraeus Precious Metals North America Conshohocken Llc | Method for applying full back surface field and silver busbar to solar cell |
-
2010
- 2010-04-20 DE DE102010027940A patent/DE102010027940A1/de not_active Withdrawn
-
2011
- 2011-02-21 US US13/642,099 patent/US8962381B2/en not_active Expired - Fee Related
- 2011-02-21 WO PCT/EP2011/052503 patent/WO2011131388A2/fr active Application Filing
- 2011-02-21 EP EP11704452.9A patent/EP2561557B1/fr not_active Not-in-force
Non-Patent Citations (1)
| Title |
|---|
| F. HUSTER, 20TH EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE, 6 June 2005 (2005-06-06) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106993404A (zh) * | 2017-05-02 | 2017-07-28 | 卜庆革 | 柔性轻量化耐高温防火防电磁辐射损伤电磁屏蔽的镀镍银玻璃纤维、布及方法 |
| CN106993404B (zh) * | 2017-05-02 | 2020-11-24 | 卜庆革 | 柔性轻量化耐高温防火防电磁辐射损伤电磁屏蔽的镀镍银玻璃纤维、布及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102010027940A1 (de) | 2011-10-20 |
| US8962381B2 (en) | 2015-02-24 |
| WO2011131388A3 (fr) | 2012-03-15 |
| EP2561557A2 (fr) | 2013-02-27 |
| EP2561557B1 (fr) | 2016-11-02 |
| US20130112259A1 (en) | 2013-05-09 |
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