WO2011128811A2 - Grounded chuck - Google Patents
Grounded chuck Download PDFInfo
- Publication number
- WO2011128811A2 WO2011128811A2 PCT/IB2011/051475 IB2011051475W WO2011128811A2 WO 2011128811 A2 WO2011128811 A2 WO 2011128811A2 IB 2011051475 W IB2011051475 W IB 2011051475W WO 2011128811 A2 WO2011128811 A2 WO 2011128811A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chuck
- electrically conductive
- wafer
- spindle
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/18—Pivoted jaw
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/20—Chucks or sockets with safety feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/34—Accessory or component
- Y10T279/3493—Protection means; e.g., cover, seal, overstress prevention, air blast
Definitions
- the invention relates to methods and apparatus for treating surfaces of articles, such as semiconductor wafers, adapted to reduce buildup of electrostatic charge.
- Wafer-supporting chucks are described for example in U.S. Patent Nos. 4,903,717, 5,513,668, 6,435,200 and 6,536,454.
- Patent 7,335,090 relates to a spin chuck having holding pins which are formed of conductive resin and associated with a stainless steel shaft, which in turn is supported by radial metal bearings.
- a steel shaft creates a risk that a semiconductor wafer may be contaminated with iron, which should be avoided.
- the connection between the stainless steel shaft and the resin pins is not specified, and connections through radial bearings likely are unreliable electrical contacts due, e.g., to the presence of bearing lubricants.
- Static charge buildup can lead to an undesired accumulation of particulates and airborne contaminants.
- electrostatic discharge may result at or near the wafer, which can damage or destroy components of an integrated circuit on the wafer.
- the methods and apparatus of the invention are not limited to use on processing equipment for semiconductor wafers, and have application as well to equipment for treating surfaces of other materials, for example glass masters and mother panels used in manufacturing optical disks and LCD display panels, as well as for cleaning surfaces of processing chambers used during processing of the above-described substrates.
- Figure 1 is a view in perspective and partly in section illustrating a grounded chuck according to an embodiment of the invention
- Figure 2 is an enlarged detail view of area II of Figure 1;
- Figure 3 is an enlarged view in perspective and partly in section of a pin assembly according to an embodiment of the invention.
- Figure 4 is a perspective view of a pin assembly according to another embodiment of the invention.
- Figure 5 is a view in perspective and partly in section of the pin assembly of Figure 4.
- a chuck (1) intended for holding a wafer-shaped article, especially during treatment with a processing fluid, is mounted on a spindle (10).
- the spindle (10) preferably is rotatable such that the chuck (1) can be set into rotation by the spindle (10).
- Such a rotatable chuck (“spin chuck”) may be surrounded by a process chamber for single wafer wet processing of semiconductor wafers.
- the chuck (1) comprises a chuck body including a generally cup-shaped base body (4), a circular cover (2) and a nave (6).
- the base body (4) includes a central aperture in which the nave (6) is seated.
- the nave (6) also includes a central aperture, the shape of which is selected to operatively engage the spindle (10).
- a frustoconical central aperture of the nave (6) corresponds with a complementary frustoconical spindle (10).
- the cover (2) is seated via an annular rib at its outer periphery on the outer rim of the base body (4) such that an internal gap is provided between an upper surface of the base body (4) and a lower surface of the cover (2).
- the cover (2) is generally C-shaped in its cross-section, such that it includes an essentially continuous upper part and an annular lower part.
- the upper and lower parts of the cover (2) are separated from one another so as to form an internal gas distribution chamber (45).
- the annular lower part of the cover (2) mechanically engages a peripheral region at one end of the nave (6) via a rotary disc (5).
- a distal end of the spindle (10) extends through the central aperture of the nave (6) and into the gas distribution chamber (45).
- the spindle (10) preferably is hollow and includes a plurality of radially directed through-holes (42) at its distal end.
- pressurized gas delivered through the hollow spindle (10) may be directed via these through-holes (42) into the gas distribution chamber (45).
- the cover (2) further includes an annularly arranged plurality of holes (48) extending from the gas distribution chamber to the upper surface of the cover (2). Accordingly, gas may be delivered through the hollow spindle (10), through-holes (42), gas distribution chamber (45) and holes (48) such that a wafer, when present, may be floated on a gas cushion during processing. Such gas may also be used to aid in securing a wafer to the chuck (1) operating on the Bernoulli principle.
- a gear rim (22) is accommodated in the gap formed between the upper surface of the base body (4) and the lower surface of the cover (2).
- This gear rim (22) is coupled with the nave (6) and meshes via its radially outwardly extending peripheral teeth with a gear wheel (20) of each of a plurality of pin assemblies (18).
- each pin assembly (18) further includes a shaft extending from the gear wheel (20), which shaft is received rotatably in bores in the cover (2) and which carries a gripping pin (19) arranged eccentrically to the axis of rotation of the shaft.
- Each pin assembly (18) is urged upwardly toward cover (2) by a needle bearing (16) and associated helical spring (15), each of which is located within a recess formed within the outer upwardly extending peripheral edge of base body (4).
- the radial distance of the gripping pins (19) from the axis of rotation of the chuck (1) can be varied.
- Mechanisms for providing relative movement of a gear rim and a chuck body so as to rotate eccentrically located pins are known as described for example in U.S. Patent Nos. 4,903,717 and 5,513,668.
- the gripping pins (19) serve as stops for the lateral retention of a wafer-shaped article (e.g. a semiconductor wafer, not shown) held on the chuck (1).
- chuck components such as wafer-supporting pins
- material that is relatively inert to highly corrosive chemicals that are sometimes used in wafer processing.
- Such materials include polyvinylidene fluoride (PVDF), polyetheretherketone (PEEK) and polytetra-fluoroethylene (PTFE), among others.
- PVDF polyvinylidene fluoride
- PEEK polyetheretherketone
- PTFE polytetra-fluoroethylene
- one or more of the pin assemblies (18) are formed from static dissipative or electrically conductive material, such as conductive plastic. Consequently, static charge is dissipated through the conductive pin assemblies (18).
- any relatively conductive plastic material having sufficiently conductive properties may be used.
- suitable conductive plastic materials include polyvinylidene fluoride incorporating conductivity carbon, such as that which is marketed under the tradename SIMONA PVDF-EL which is reported to exhibit volume and surface resistivities of ⁇ 10 6 ohm*cm and ⁇ 10 6 ohm, respectively, under test method DIN IEC 60093.
- relatively conductive plastics include carbon filled ethylene tetrafluoroethylene as, for example, is marketed under the tradename Fluon LM-ETFE AH-3000, and carbon fiber filled perfluoroalkoxy as, for example, is marketed by Dupont under the tradename VESPEL CR-6110 which comprises a composite of carbon fiber sheets and polymer layers and is believed to exhibit volume and surface resistivities of about 10 -1 ohm*cm and 10 -1 ohm, respectively, in the direction of the layers and about 10 0 ohm*cm and 10 1 ohm, respectively, normal to the layers.
- VESPEL CR-6110 which comprises a composite of carbon fiber sheets and polymer layers and is believed to exhibit volume and surface resistivities of about 10 -1 ohm*cm and 10 -1 ohm, respectively, in the direction of the layers and about 10 0 ohm*cm and 10 1 ohm, respectively, normal to the layers.
- an electrically conductive path is provided, extending from pin assemblies (18) through chuck (1) and to spindle (10).
- a conductive spring seat (14) is located below and in electrical contact with the helical spring (15).
- the helical spring (15) and needle bearing also are formed from electrically conductive material.
- a conducting ring (13) is electrically connected (e.g., by metallic screws) to the spring seat (14). Also, one or more radially extending conductors (12) are joined to the upper surface of the base body (4) and are electrically connected (e.g., by metallic screws) to the conducting ring (13). As can be seen from Figure 2, the spring seat (14), conducting ring (13) and radially extending conductors (12) are all located within the internal gap which is formed between the upper surface of the base body (4) and the lower surface of the cover (2).
- the conducting member (11) preferably comprises a metal spring such that the above-described conductive pathway of the chuck (1) is electrically connected to the spindle, which also is conductive, when the chuck (1) is seated on the spindle (10).
- chuck (1) provides an electrically conductive pathway leading through the pin assemblies (18), needle bearing (16), helical spring (15), spring seat (14), conducting ring (13), radial conductors (12) and conducting member (11).
- the above-described conductive pathway continues via conducting member (11) to the spindle (10), which in turn may be electrically grounded, for example, by electrical connection to associated tool framing or other suitable electrically conductive sink.
- the pin assemblies (18) also include an electrically conductive inlay (17), preferably formed of metal, located within a central bore of the pin assembly (18) and extending to the lower end thereof so as to physically and electrically contact the needle bearing (16), as shown in Figure 3.
- the inlay (17) also includes a needle bearing seat (17s) for receiving the needle bearing (16) and thereby further enhancing the electrical contact between the pin assembly (18) and the needle bearing (16).
- pin assemblies (218) can be provided as shown in Figures 4 and 5.
- Pin assemblies (218) are essentially similar to what is shown in Figure 3, including a gear wheel (220) and conductive inlay (217), except that the gripping pins (219) include a curved and reduced diameter waist. It will be appreciated that gripping pins (219) can provide both lateral and vertical support to a wafer, as is useful in conjunction with chucks that do not provide a gas cushion operating on the Bernoulli principle.
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (15)
- Device for processing wafer-shaped articles, comprising a chuck adapted to maintain a wafer-shaped article in a predetermined orientation during a processing operation to be performed on the article, said chuck comprising a chuck body and a plurality of pin assemblies adapted and positioned relative to the chuck body so as to support a wafer-shaped article to be processed, wherein at least one of said pin assemblies is formed from a chemically inert material and includes an electrically conductive inlay at one end, said inlay being adapted to physically and electrically engage a bearing element.
- The device according to claim 1, wherein the chuck is a spin chuck surrounded by a process chamber for single wafer wet processing of semiconductor wafers.
- The device according to claim 1, wherein said bearing element is an electrically conductive needle bearing.
- The device according to claim 1, wherein said chuck is adapted to engage and be supported by a spindle, said chuck further comprising an electrically conductive pathway leading from said at least one pin assembly through said bearing element to said spindle.
- The device according to claim 4, wherein said chuck body comprises an upper part joined to a lower part so as to form an internal gap therebetween, said electrically conductive pathway being provided within said internal gap.
- The device according to claim 5, wherein the electrically conductive pathway comprises one or more conductive elements located within said internal gap.
- The device according to claim 1, wherein said pin assemblies are positioned in a circular series about an area where a wafer-shaped article is to be positioned on the chuck, each of said pin assemblies being formed from a chemically inert material and including an electrically conductive inlay at one end, each said inlay being adapted to physically and electrically engage a bearing element.
- The device according to claim 7, wherein said chuck is adapted to engage and be supported by a spindle, said chuck further comprising an electrically conductive pathway leading from said pin assemblies through said bearing elements to said spindle.
- The device according to claim 8, wherein said electrically conductive pathway comprises an electrically conductive seat electrically connected to said bearing element, a radial conductor electrically connected to said seat, and a conducting member electrically connected to said radial conductor and adapted to be electrically connected to said spindle when said chuck engages said spindle.
- A structure for use in devices for processing wafer-shaped articles, comprising a pin assembly, wherein said pin assembly is formed from a chemically inert material and includes an electrically conductive inlay at one end.
- The structure according to claim 10, wherein said inlay is adapted to physically and electrically engage a bearing element.
- The structure according to claim 11, wherein said bearing element is an electrically conductive needle bearing.
- The structure according to claim 10, wherein said pin assembly comprises a gripping pin eccentrically arranged at one end of a shaft.
- The structure according to claim 13, wherein said pin assembly further comprises a gear ring located at an end opposite to said gripping pin.
- Pin assembly for use in a device for processing wafer-shaped articles, wherein said pin assembly is formed from a chemically inert conductive polymer material and includes an electrically conductive inlay at one end.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG2012064499A SG183840A1 (en) | 2010-04-16 | 2011-04-06 | Grounded chuck |
| JP2013504366A JP6381913B2 (en) | 2010-04-16 | 2011-04-06 | Apparatus for processing wafer-shaped articles, structure used in the apparatus, and pin assembly |
| CN201180011383.7A CN102782832B (en) | 2010-04-16 | 2011-04-06 | grounded chuck |
| KR1020187018688A KR102133658B1 (en) | 2010-04-16 | 2011-04-06 | Grounded chuck |
| KR1020127026604A KR20130059326A (en) | 2010-04-16 | 2011-04-06 | Grounded chuck |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/761,713 | 2010-04-16 | ||
| US12/761,713 US9190310B2 (en) | 2010-04-16 | 2010-04-16 | Grounded chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2011128811A2 true WO2011128811A2 (en) | 2011-10-20 |
| WO2011128811A3 WO2011128811A3 (en) | 2012-02-23 |
Family
ID=44787661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IB2011/051475 Ceased WO2011128811A2 (en) | 2010-04-16 | 2011-04-06 | Grounded chuck |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9190310B2 (en) |
| JP (1) | JP6381913B2 (en) |
| KR (2) | KR102133658B1 (en) |
| CN (1) | CN102782832B (en) |
| SG (1) | SG183840A1 (en) |
| TW (1) | TWI464829B (en) |
| WO (1) | WO2011128811A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2014196323A1 (en) * | 2013-06-06 | 2017-02-23 | イビデン株式会社 | Wafer carrier and epitaxial growth apparatus using the same |
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| US9633890B2 (en) * | 2011-12-16 | 2017-04-25 | Lam Research Ag | Device for treating surfaces of wafer-shaped articles and gripping pin for use in the device |
| US9147593B2 (en) * | 2012-10-10 | 2015-09-29 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles |
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| US9887120B2 (en) * | 2015-11-03 | 2018-02-06 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| US9972514B2 (en) * | 2016-03-07 | 2018-05-15 | Lam Research Ag | Apparatus for liquid treatment of wafer shaped articles |
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| CN106548971A (en) * | 2016-10-11 | 2017-03-29 | 武汉新芯集成电路制造有限公司 | A kind of chuck of wet method single chip washer platform |
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| JP6873178B2 (en) * | 2019-03-26 | 2021-05-19 | 日本碍子株式会社 | Semiconductor manufacturing equipment members, their manufacturing methods and molding dies |
| KR20210136405A (en) | 2020-05-07 | 2021-11-17 | 주식회사 알파브라더스 | Network node for securely sharing of advertisement recommendation inforamtion uising block-chain technology |
| GB202012725D0 (en) * | 2020-08-14 | 2020-09-30 | Lam Res Ag | Apparatus for processing a wafer-shaped article |
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| KR100734671B1 (en) | 2005-12-28 | 2007-07-02 | 동부일렉트로닉스 주식회사 | Electrostatic chuck device for semiconductor manufacturing equipment |
| JP2007234882A (en) * | 2006-03-01 | 2007-09-13 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate handling method |
| JP2008159789A (en) | 2006-12-22 | 2008-07-10 | Renesas Technology Corp | Semiconductor device manufacturing method |
| JP2008198836A (en) | 2007-02-14 | 2008-08-28 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
| JP4783762B2 (en) * | 2007-08-31 | 2011-09-28 | 東京エレクトロン株式会社 | Substrate mounting table and substrate processing apparatus |
| JP5022855B2 (en) * | 2007-10-05 | 2012-09-12 | 古河機械金属株式会社 | Lift pin mechanism, heat treatment device, vacuum drying device |
| KR100952035B1 (en) * | 2008-05-19 | 2010-04-07 | 주식회사 케이씨텍 | Spin-chuck device and chuck pin operation method of single wafer processing equipment |
| KR101388107B1 (en) | 2008-05-21 | 2014-04-23 | 주식회사 케이씨텍 | Spin chuck device for single wafer treating machine |
-
2010
- 2010-04-16 US US12/761,713 patent/US9190310B2/en active Active
-
2011
- 2011-04-06 WO PCT/IB2011/051475 patent/WO2011128811A2/en not_active Ceased
- 2011-04-06 KR KR1020187018688A patent/KR102133658B1/en active Active
- 2011-04-06 KR KR1020127026604A patent/KR20130059326A/en not_active Ceased
- 2011-04-06 JP JP2013504366A patent/JP6381913B2/en active Active
- 2011-04-06 SG SG2012064499A patent/SG183840A1/en unknown
- 2011-04-06 CN CN201180011383.7A patent/CN102782832B/en active Active
- 2011-04-07 TW TW100112056A patent/TWI464829B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2014196323A1 (en) * | 2013-06-06 | 2017-02-23 | イビデン株式会社 | Wafer carrier and epitaxial growth apparatus using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201203451A (en) | 2012-01-16 |
| JP2013526018A (en) | 2013-06-20 |
| CN102782832A (en) | 2012-11-14 |
| KR20130059326A (en) | 2013-06-05 |
| KR20180077340A (en) | 2018-07-06 |
| US9190310B2 (en) | 2015-11-17 |
| TWI464829B (en) | 2014-12-11 |
| WO2011128811A3 (en) | 2012-02-23 |
| KR102133658B1 (en) | 2020-07-14 |
| CN102782832B (en) | 2015-08-26 |
| JP6381913B2 (en) | 2018-08-29 |
| SG183840A1 (en) | 2012-11-29 |
| US20110254236A1 (en) | 2011-10-20 |
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