WO2011107557A3 - Substrat conducteur transparent pour dispositifs optoélectroniques - Google Patents
Substrat conducteur transparent pour dispositifs optoélectroniques Download PDFInfo
- Publication number
- WO2011107557A3 WO2011107557A3 PCT/EP2011/053224 EP2011053224W WO2011107557A3 WO 2011107557 A3 WO2011107557 A3 WO 2011107557A3 EP 2011053224 W EP2011053224 W EP 2011053224W WO 2011107557 A3 WO2011107557 A3 WO 2011107557A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrical conductivity
- layer
- transparent conductive
- conductive substrate
- optoelectronic devices
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 6
- 239000011787 zinc oxide Substances 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Substrat conducteur transparent pour dispositif optoélectronique comprenant un support (10) et un revêtement conducteur à base d'oxyde de zinc dopé, ledit revêtement étant constitué d'un empilement de deux couches de conductivité électrique différente, une couche dite de conductivité électrique faible (12) et une couche dite de conductivité électrique élevée (13),1a couche dite de conductivité faible étant la couche constituant l'empilement la plus proche du support, tel que la couche dite de conductivité électrique élevée (13) est une couche à base d'oxyde de zinc dopé à m% en poids d'oxyde d'un élément dopant avec m inférieur ou égal à 6% et en ce que la couche dite de conductivité électrique faible (12) est une couche à base d'oxyde de zinc dopé à (m/p) % en poids d'oxyde d'un élément dopant avec p supérieur ou égal à 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11706269A EP2543073A2 (fr) | 2010-03-04 | 2011-03-03 | Substrat conducteur transparent pour dispositifs optoélectroniques |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BEBE2010/137 | 2010-03-04 | ||
BEBE2010/147 | 2010-03-04 | ||
BEBE2010/148 | 2010-03-04 | ||
BE2010/0137A BE1019211A3 (fr) | 2010-03-04 | 2010-03-04 | Substrat conducteur transparent pour dispositifs optoelectroniques. |
BE2010/0147A BE1019244A3 (fr) | 2010-03-04 | 2010-03-04 | Substrat conducteur transparent pour dispositifs optoelectroniques. |
BE2010/0148A BE1019245A3 (fr) | 2010-03-04 | 2010-03-04 | Substrat conducteur transparent pour dispositifs optoelectroniques. |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011107557A2 WO2011107557A2 (fr) | 2011-09-09 |
WO2011107557A3 true WO2011107557A3 (fr) | 2012-07-26 |
Family
ID=44542654
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/053215 WO2011107554A2 (fr) | 2010-03-04 | 2011-03-03 | Substrat conducteur transparent pour dispositifs optoélectroniques |
PCT/EP2011/053200 WO2011107549A2 (fr) | 2010-03-04 | 2011-03-03 | Substrat conducteur transparent pour dispositifs optoélectroniques |
PCT/EP2011/053224 WO2011107557A2 (fr) | 2010-03-04 | 2011-03-03 | Substrat conducteur transparent pour dispositifs optoélectroniques |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/053215 WO2011107554A2 (fr) | 2010-03-04 | 2011-03-03 | Substrat conducteur transparent pour dispositifs optoélectroniques |
PCT/EP2011/053200 WO2011107549A2 (fr) | 2010-03-04 | 2011-03-03 | Substrat conducteur transparent pour dispositifs optoélectroniques |
Country Status (2)
Country | Link |
---|---|
EP (2) | EP2543073A2 (fr) |
WO (3) | WO2011107554A2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104011014B (zh) | 2011-10-07 | 2016-05-11 | 因温斯特技术公司 | 用于制备腈的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
JP2008277387A (ja) * | 2007-04-26 | 2008-11-13 | Kaneka Corp | 光電変換装置の製造方法 |
US20090229657A1 (en) * | 2008-03-17 | 2009-09-17 | Nanopv Technologies Inc. | Transparent conductive layer and method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19713215A1 (de) | 1997-03-27 | 1998-10-08 | Forschungszentrum Juelich Gmbh | Solarzelle mit texturierter TCO-Schicht sowie Verfahren zur Herstellung einer solchen TCO-Schicht für eine solche Solarzelle |
JPH10294478A (ja) * | 1997-04-18 | 1998-11-04 | Sharp Corp | 光電変換素子 |
JP2000261011A (ja) * | 1999-03-05 | 2000-09-22 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置 |
JP2002025350A (ja) * | 2000-07-11 | 2002-01-25 | Sanyo Electric Co Ltd | 透明導電膜付き基板及びその作製方法,それを用いたエッチング方法並びに光起電力装置 |
EP2084752B1 (fr) * | 2006-11-20 | 2016-08-17 | Kaneka Corporation | Procédé de fabrication d' un substrat avec une couche conductrice transparente pour cellules solaires à base de couches minces |
JP4670877B2 (ja) * | 2008-02-25 | 2011-04-13 | 住友金属鉱山株式会社 | 酸化亜鉛系透明導電膜積層体と透明導電性基板およびデバイス |
WO2010003066A2 (fr) * | 2008-07-03 | 2010-01-07 | University Of Florida Research Foundation, Inc. | Electrode conductrice transparente |
-
2011
- 2011-03-03 WO PCT/EP2011/053215 patent/WO2011107554A2/fr active Application Filing
- 2011-03-03 WO PCT/EP2011/053200 patent/WO2011107549A2/fr active Application Filing
- 2011-03-03 EP EP11706269A patent/EP2543073A2/fr not_active Withdrawn
- 2011-03-03 EP EP11708441A patent/EP2543074A2/fr not_active Withdrawn
- 2011-03-03 WO PCT/EP2011/053224 patent/WO2011107557A2/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5078803A (en) * | 1989-09-22 | 1992-01-07 | Siemens Solar Industries L.P. | Solar cells incorporating transparent electrodes comprising hazy zinc oxide |
JP2008277387A (ja) * | 2007-04-26 | 2008-11-13 | Kaneka Corp | 光電変換装置の製造方法 |
US20090229657A1 (en) * | 2008-03-17 | 2009-09-17 | Nanopv Technologies Inc. | Transparent conductive layer and method |
Also Published As
Publication number | Publication date |
---|---|
EP2543073A2 (fr) | 2013-01-09 |
WO2011107549A2 (fr) | 2011-09-09 |
WO2011107549A3 (fr) | 2012-07-26 |
WO2011107554A3 (fr) | 2012-07-26 |
EP2543074A2 (fr) | 2013-01-09 |
WO2011107554A2 (fr) | 2011-09-09 |
WO2011107557A2 (fr) | 2011-09-09 |
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