WO2011102627A3 - ＺｎＯ에 격자 정합된 자외선용 단결정 ＺｎＭｇＡｌＯ 박막 및 그 제조방법 - Google Patents

ＺｎＯ에 격자 정합된 자외선용 단결정 ＺｎＭｇＡｌＯ 박막 및 그 제조방법 Download PDF

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Publication number
WO2011102627A3
WO2011102627A3 PCT/KR2011/000981 KR2011000981W WO2011102627A3 WO 2011102627 A3 WO2011102627 A3 WO 2011102627A3 KR 2011000981 W KR2011000981 W KR 2011000981W WO 2011102627 A3 WO2011102627 A3 WO 2011102627A3
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WIPO (PCT)
Prior art keywords
znmgalo
thin film
zno
ultraviolet rays
preparation
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PCT/KR2011/000981
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English (en)
French (fr)
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WO2011102627A2 (ko
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이병택
김일수
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전남대학교산학협력단
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Publication of WO2011102627A2 publication Critical patent/WO2011102627A2/ko
Publication of WO2011102627A3 publication Critical patent/WO2011102627A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

본 발명은 산화아연(ZnO)에 격자 정합된 자외선용 단결정 ZnMgAlO 박막 및 그 제조방법으로서, ZnO 기판을 준비하고, 산화 마그네슘(MgO)과 알루미나(Al2O3)의 혼합비가 5.5~5.7 : 1인 ZnMgAlO 박막을 스퍼터링 기법을 통해 상기 ZnO 기판 상에 성장시킴으로써, 격자 상수(원자 면간 거리)가 일치하면서도 자외선 영역에서 사용할 수 있으며 에너지 밴드 갭이 큰 ZnMgAlO 박막을 얻을 수 있다.
PCT/KR2011/000981 2010-02-19 2011-02-15 ＺｎＯ에 격자 정합된 자외선용 단결정 ＺｎＭｇＡｌＯ 박막 및 그 제조방법 WO2011102627A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0015418 2010-02-19
KR1020100015418A KR101213133B1 (ko) 2010-02-19 2010-02-19 ＺｎＯ에 격자 정합된 자외선용 단결정 ＺｎＭｇＡｌＯ 박막 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2011102627A2 WO2011102627A2 (ko) 2011-08-25
WO2011102627A3 true WO2011102627A3 (ko) 2011-11-24

Family

ID=44483452

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/000981 WO2011102627A2 (ko) 2010-02-19 2011-02-15 ＺｎＯ에 격자 정합된 자외선용 단결정 ＺｎＭｇＡｌＯ 박막 및 그 제조방법

Country Status (2)

Country Link
KR (1) KR101213133B1 (ko)
WO (1) WO2011102627A2 (ko)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080008306A (ko) * 2007-10-31 2008-01-23 주식회사 퀀텀디바이스 자외선 발광소자와 그 제조방법
WO2008050479A1 (fr) * 2006-10-25 2008-05-02 Stanley Electric Co., Ltd. Couche de zno et dispositif électroluminescent à semi-conducteur
JP2009196867A (ja) * 2008-02-23 2009-09-03 Citizen Holdings Co Ltd ＭｇａＺｎ１−ａＯ単結晶薄膜の作製方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4982423B2 (ja) 2008-04-24 2012-07-25 株式会社日立製作所 酸化亜鉛薄膜形成用スパッタターゲットと、それを用いて得られる酸化亜鉛薄膜を有する表示素子及び太陽電池

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008050479A1 (fr) * 2006-10-25 2008-05-02 Stanley Electric Co., Ltd. Couche de zno et dispositif électroluminescent à semi-conducteur
KR20080008306A (ko) * 2007-10-31 2008-01-23 주식회사 퀀텀디바이스 자외선 발광소자와 그 제조방법
JP2009196867A (ja) * 2008-02-23 2009-09-03 Citizen Holdings Co Ltd ＭｇａＺｎ１−ａＯ単結晶薄膜の作製方法

Also Published As

Publication number Publication date
KR101213133B1 (ko) 2012-12-18
KR20110095769A (ko) 2011-08-25
WO2011102627A2 (ko) 2011-08-25

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