WO2011085715A3 - Verfahren zur ausbildung einer zweistufigen dotierung in einem halbleitersubstrat - Google Patents

Verfahren zur ausbildung einer zweistufigen dotierung in einem halbleitersubstrat Download PDF

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Publication number
WO2011085715A3
WO2011085715A3 PCT/DE2011/000013 DE2011000013W WO2011085715A3 WO 2011085715 A3 WO2011085715 A3 WO 2011085715A3 DE 2011000013 W DE2011000013 W DE 2011000013W WO 2011085715 A3 WO2011085715 A3 WO 2011085715A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
doping
creating
stage doping
stage
Prior art date
Application number
PCT/DE2011/000013
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English (en)
French (fr)
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WO2011085715A2 (de
Inventor
Andreas Teppe
Matthias Geiger
Reinhold Schlosser
Jörg ISENBERG
Tino KÜHN
Adolf MÜNZER
Steffen Keller
Original Assignee
Centrotherm Photovoltaics Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Centrotherm Photovoltaics Ag filed Critical Centrotherm Photovoltaics Ag
Publication of WO2011085715A2 publication Critical patent/WO2011085715A2/de
Publication of WO2011085715A3 publication Critical patent/WO2011085715A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Verfahren zur Ausbildung einer zweistufigen Dotierung in einem Halbleitersubstrat (80), bei welchem in einen mit der zweistufigen Dotierung (90, 92) zu versehenden Dotierungsbereich (89) mittels einer starken Diffusion (10) Dotierstoff in das Halbleitersubstrat (80) eindiffundiert und in dieser Weise eine hohe Oberflächenkonzentration an Dotierstoff ausgebildet wird, nach der starken Diffusion (10) in stärker zu dotierenden Bereichen (91) der zweistufigen Dotierung (90, 92) das Halbleitersubstrat (80) lokal erhitzt wird (12) und auf dem Dotierungsbereich (89) eine Oxidschicht (88) ausgebildet wird (16).
PCT/DE2011/000013 2010-01-12 2011-01-11 Verfahren zur ausbildung einer zweistufigen dotierung in einem halbleitersubstrat WO2011085715A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010004498.9 2010-01-12
DE102010004498A DE102010004498A1 (de) 2010-01-12 2010-01-12 Verfahren zur Ausbildung einer zweistufigen Dotierung in einem Halbleitersubstrat

Publications (2)

Publication Number Publication Date
WO2011085715A2 WO2011085715A2 (de) 2011-07-21
WO2011085715A3 true WO2011085715A3 (de) 2012-08-16

Family

ID=44304704

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2011/000013 WO2011085715A2 (de) 2010-01-12 2011-01-11 Verfahren zur ausbildung einer zweistufigen dotierung in einem halbleitersubstrat

Country Status (2)

Country Link
DE (1) DE102010004498A1 (de)
WO (1) WO2011085715A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018025643A1 (ja) * 2016-08-04 2018-02-08 パナソニックＩｐマネジメント株式会社 太陽電池セルおよび太陽電池セルの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429037B1 (en) * 1998-06-29 2002-08-06 Unisearch Limited Self aligning method for forming a selective emitter and metallization in a solar cell
US20090260684A1 (en) * 2008-04-17 2009-10-22 You Jaesung Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006041424A1 (de) * 2006-09-04 2008-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung
US7615393B1 (en) * 2008-10-29 2009-11-10 Innovalight, Inc. Methods of forming multi-doped junctions on a substrate
DE102008056456A1 (de) 2008-11-07 2010-06-17 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung einer Solarzelle mit einer zweistufigen Dotierung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429037B1 (en) * 1998-06-29 2002-08-06 Unisearch Limited Self aligning method for forming a selective emitter and metallization in a solar cell
US20090260684A1 (en) * 2008-04-17 2009-10-22 You Jaesung Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CARLSSON C. ET AL: "Laser Doping For Selective Silicon Solar Cell Emitter", 21ST EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE : PROCEEDINGS OF THE INTERNATIONAL CONFERENCE HELD IN DRESDEN, GERMANY, 4 - 8 SEPTEMBER 2006, WIP RENEWABLE ENERGIES, MÜNCHEN, 4 September 2006 (2006-09-04), pages 938 - 940, XP040512319, ISBN: 978-3-936338-20-1 *

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Publication number Publication date
DE102010004498A1 (de) 2011-07-14
WO2011085715A2 (de) 2011-07-21

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