WO2011072905A1 - Appareil de lithographie et son procédé de fabrication - Google Patents

Appareil de lithographie et son procédé de fabrication Download PDF

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Publication number
WO2011072905A1
WO2011072905A1 PCT/EP2010/065406 EP2010065406W WO2011072905A1 WO 2011072905 A1 WO2011072905 A1 WO 2011072905A1 EP 2010065406 W EP2010065406 W EP 2010065406W WO 2011072905 A1 WO2011072905 A1 WO 2011072905A1
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WO
WIPO (PCT)
Prior art keywords
radiation
patterned
substrate
path
euv
Prior art date
Application number
PCT/EP2010/065406
Other languages
English (en)
Inventor
Luigi Scaccabarozzi
Vadim Banine
Vladimir Ivanov
Andrei Yakunin
Original Assignee
Asml Netherlands B.V.
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Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2011072905A1 publication Critical patent/WO2011072905A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Definitions

  • the present invention relates to a lithographic apparatus and a method for manufacturing a device.
  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.
  • a single substrate will contain a network of adjacent target portions that are successively patterned.
  • Lithography is widely recognized as one of the key steps in the manufacture of
  • lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured.
  • CD k *— [0006] where ⁇ is the wavelength of the radiation used, NA is the numerical aperture of the projection system used to print the pattern, kl is a process dependent adjustment factor, also called the Rayleigh constant, and CD is the feature size (or critical dimension) of the printed feature. It follows from equation (1) that reduction of the minimum printable size of features can be obtained in three ways: by shortening the exposure wavelength ⁇ , by increasing the numerical aperture NA or by decreasing the value of kl .
  • EUV radiation is electromagnetic radiation having a wavelength within the range of 10-20 nm, for example within the range of 13-14 nm. It has further been proposed that EUV radiation with a wavelength of less than 10 nm could be used, for example within the range of 5-10 nm such as 6.7 nm or 6.8 nm. Such radiation is termed extreme ultraviolet radiation or soft x-ray radiation. Possible sources include, for example, laser-produced plasma sources, discharge plasma sources, or sources based on synchrotron radiation provided by an electron storage ring.
  • EUV radiation may be produced using a plasma.
  • a radiation system for producing EUV radiation may include a laser for exciting a fuel to provide the plasma, and a source collector module for containing the plasma.
  • the plasma may be created, for example, by directing a laser beam at a fuel, such as particles of a suitable material (e.g., tin), or a stream of a suitable gas or vapor, such as Xe gas or Li vapor.
  • the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector.
  • the radiation collector may be a mirrored normal incidence radiation collector, which receives the radiation and focuses the radiation into a beam.
  • the source collector module may include an enclosing structure or chamber arranged to provide a vacuum environment to support the plasma. Such a radiation system is typically termed a laser produced plasma (LPP) source.
  • LPP laser produced plasma
  • lithographic apparatus are generally operated with a pellicle to protect the mask
  • no pellicle is used in EUV lithographic apparatus in order to avoid absorption of the radiation beam. This leaves the mask open to contamination by organic and inorganic particles. Particles within the path of the projection may be deposited on the mask, which would lead to defects on the resulting substrate. Debris particles in the system may particularly originate from the plasma source.
  • a lithographic apparatus comprising an illumination system, a support, a projection system, a substrate table, and a detector.
  • the illumination system is configured to condition a beam of EUV radiation.
  • the support is constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam.
  • the substrate table is constructed to hold a substrate.
  • the projection system is configured to project the patterned radiation beam onto a target portion of the substrate.
  • the detector is configured to detect thermal radiation emitted from within the path of the patterned radiation beam.
  • a device manufacturing method comprising the following steps (not necessarily in the order shown). Projecting a patterned beam of EUV radiation onto a substrate. Detecting thermal radiation emitted from the path of the patterned beam of radiation to detect particles in the path of the patterned beam of EUV radiation.
  • a device manufacturing method comprising the following steps (not necessarily in the order shown). Projecting a beam of EUV radiation onto a patterning device. Detecting thermal radiation emitted from the path of the beam of radiation to detect particles in the path of the beam of EUV radiation.
  • a lithographic apparatus comprising an illumination system, a support, a substrate table, a projection system, and a detector.
  • the illumination system is configured to condition a beam of EUV radiation.
  • the support is constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam.
  • the substrate table is constructed to hold a substrate.
  • the projection system configured to project the patterned radiation beam onto a target portion of the substrate.
  • the detector is configured to detect a change in thermal radiation emitted from within the path of the patterned radiation beam.
  • a lithographic apparatus comprising: an illumination system configured to condition a beam of EUV radiation; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate; and a detector configured to detect thermal radiation emitted from particles which have passed through the path of the radiation beam.
  • a device manufacturing method comprising the following steps (not necessarily in the order shown). Projecting a patterned beam of EUV radiation onto a substrate. Detecting thermal radiation emitted from particles which have passed through the path of the radiation beam. The detecting may take place after the patterned beam has stopped.
  • Figure 1 depicts a lithographic apparatus according to an embodiment of the invention.
  • Figure 2 is a more detailed view of the apparatus of Figure 1.
  • Figure 3 is a more detailed view of the source collector module of the apparatus of Figures 1 and 2.
  • Figure 4 depicts and apparatus according to an embodiment of the present invention.
  • Embodiments of the invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the invention may also be implemented as instructions stored on a machine -readable medium, which may be read and executed by one or more processors.
  • a machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device).
  • a machine-readable medium may include read only memory (ROM); random access memory (RAM); magnetic disk storage media; optical storage media; flash memory devices; electrical, optical, acoustical or other forms of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others.
  • firmware, software, routines, instructions may be described herein as performing certain actions. However, it should be appreciated that such descriptions are merely for convenience and that such actions in fact result from computing devices, processors, controllers, or other devices executing the firmware, software, routines, instructions, etc.
  • FIG. 1 schematically depicts a lithographic apparatus 100 including a source collector module SO according to one embodiment of the invention.
  • the apparatus comprises an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., EUV radiation), a support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask or a reticle) MA and connected to a first positioner PM configured to accurately position the patterning device, a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist coated wafer) W and connected to a second positioner PW configured to accurately position the substrate, and a projection system (e.g., a reflective projection system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.
  • a radiation beam B e.g., EU
  • the illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • optical components such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • the support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment.
  • the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system.
  • patterning device should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate.
  • the pattern imparted to the radiation beam may correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • the patterning device may be transmissive or reflective.
  • Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam, which is reflected by the mirror matrix.
  • the projection system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of a vacuum. It may be desired to use a vacuum for EUV radiation since other gases may absorb too much radiation. A vacuum environment may therefore be provided to the whole beam path with the aid of a vacuum wall and vacuum pumps.
  • the apparatus is of a reflective type (e.g., employing a reflective mask).
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such "multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • the illuminator IL receives an extreme ultra violet radiation beam from the source collector module SO.
  • Methods to produce EUV light include, but are not necessarily limited to, converting a material into a plasma state that has at least one element, e.g., xenon, lithium or tin, with one or more emission lines in the EUV range.
  • LPP laser produced plasma
  • the required plasma can be produced by irradiating a fuel, such as a droplet, stream or cluster of material having the required line-emitting element, with a laser beam.
  • the source collector module SO may be part of an EUV radiation system including a laser, not shown in Figure 1, for providing the laser beam exciting the fuel.
  • the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector, disposed in the source collector module.
  • output radiation e.g., EUV radiation
  • the laser and the source collector module may be separate entities, for example when a C02 laser is used to provide the laser beam for fuel excitation.
  • the laser is not considered to form part of the lithographic apparatus and the radiation beam is passed from the laser to the source collector module with the aid of a beam delivery system comprising, for example, suitable directing mirrors and/or a beam expander.
  • the source may be an integral part of the source collector module, for example when the source is a discharge produced plasma EUV generator, often termed as a DPP source.
  • the illuminator IL may comprise an adjuster for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted.
  • the illuminator IL may comprise various other components, such as facetted field and pupil mirror devices. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross section.
  • the radiation beam B is incident on the patterning device (e.g., mask) MA, which is held on the support structure (e.g., mask table) MT, and is patterned by the patterning device. After being reflected from the patterning device (e.g., mask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B.
  • the first positioner PM and another position sensor PS1 can be used to accurately position the patterning device (e.g., mask) MA with respect to the path of the radiation beam B.
  • Patterning device (e.g., mask) MA and substrate W may be aligned using mask alignment marks Ml, M2 and substrate alignment marks PI, P2.
  • the depicted apparatus could be used in at least one of the following modes:
  • step mode the support structure (e.g., mask table) MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e., a single static exposure).
  • the substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed.
  • the support structure (e.g., mask table) MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e., a single dynamic exposure).
  • the velocity and direction of the substrate table WT relative to the support structure (e.g., mask table) MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS.
  • the support structure (e.g., mask table) MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C.
  • a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan.
  • This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
  • FIG. 2 shows the apparatus 100 in more detail, including the source collector module SO, the illumination system IL, and the projection system PS.
  • the source collector module SO is constructed and arranged such that a vacuum environment can be maintained in an enclosing structure 220 of the source collector module SO.
  • An EUV radiation emitting plasma 210 may be formed by a discharge produced plasma source. EUV radiation may be produced by a gas or vapor, for example Xe gas, Li vapor or Sn vapor in which the very hot plasma 210 is created to emit radiation in the EUV range of the electromagnetic spectrum.
  • the very hot plasma 210 is created by, for example, an electrical discharge causing an at least partially ionized plasma.
  • Partial pressures of, for example, 10 Pa of Xe, Li, Sn vapor or any other suitable gas or vapor may be required for efficient generation of the radiation.
  • a plasma of excited tin (Sn) is provided to produce EUV radiation.
  • the radiation emitted by the hot plasma 210 is passed from a source chamber
  • the contaminant trap 230 may include a channel structure.
  • Contamination trap 230 may also include a gas barrier or a combination of a gas barrier and a channel structure.
  • the contaminant trap or contaminant barrier 230 further indicated herein at least includes a channel structure, as known in the art.
  • the collector chamber 211 may include a radiation collector CO, which may be a so-called grazing incidence collector.
  • Radiation collector CO has an upstream radiation collector side 251 and a downstream radiation collector side 252. Radiation that traverses collector CO can be reflected off a grating spectral filter 240 to be focused in a virtual source point IF.
  • the virtual source point IF is commonly referred to as the intermediate focus, and the source collector module is arranged such that the intermediate focus IF is located at or near an opening 221 in the enclosing structure 220.
  • the virtual source point IF is an image of the radiation emitting plasma 210.
  • the radiation traverses the illumination system IL, which may include a facetted field mirror device 22 and a facetted pupil mirror device 24 arranged to provide a desired angular distribution of the radiation beam 21, at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
  • the illumination system IL may include a facetted field mirror device 22 and a facetted pupil mirror device 24 arranged to provide a desired angular distribution of the radiation beam 21, at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
  • More elements than shown may generally be present in illumination optics unit IL and projection system PS.
  • the grating spectral filter 240 may optionally be present, depending upon the type of lithographic apparatus. Further, there may be more mirrors present than those shown in the Figures, for example there may be 1-6 additional reflective elements present in the projection system PS than shown in Figure 2.
  • Collector optic CO is depicted as a nested collector with grazing incidence reflectors 253, 254 and 255, just as an example of a collector (or collector mirror).
  • the grazing incidence reflectors 253, 254 and 255 are disposed axially symmetric around an optical axis O and a collector optic CO of this type is preferably used in combination with a discharge produced plasma source, often called a DPP source.
  • the source collector module SO may be part of an LPP radiation system as shown in Figure 3.
  • a laser LA is arranged to deposit laser energy into a fuel, such as xenon (Xe), tin (Sn) or lithium (Li), creating the highly ionized plasma 210 with electron temperatures of several 10's of eV.
  • Xe xenon
  • Sn tin
  • Li lithium
  • the energetic radiation generated during de-excitation and recombination of these ions is emitted from the plasma, collected by a near normal incidence collector optic CO and focused onto the opening 221 in the enclosing structure 220.
  • any particles D within the path of the radiation beam will heat up very quickly and then emit thermal radiation, as shown in Figure 4.
  • the intensity of radiation emitted by such small particles at shorter wavelengths is higher than the intensity of background radiation at similar wavelengths.
  • a detector 30 arranged to detect thermal radiation from the path of the radiation beam. If radiation below a certain wavelength and of an intensity higher than the residual background radiation from the surroundings is detected a particle may be determined to be present.
  • the mask, MA could therefore be protected or removed to avoid the particle(s) being deposited on the mask.
  • the mask MA may be protected by placing another surface in front of it so that any debris is deposited on the other surface.
  • the particle(s) could also be removed by, for example, using an electrostatic trap or any other available methods. Alternatively detection of a particle could prompt an inspection of the mask MA.
  • Background noise will be present from surrounding objects but the effect of this can be minimized by arranging a wall 35 opposite to the detector.
  • the wall may be cooled to further reduce the background noise.
  • a filter may be used which removes radiation above a predetermined wavelength.
  • a particle may be determined to be present if radiation below a predetermined wavelength and above a predetermined intensity (e.g., the intensity of the background radiation) is detected.
  • the predetermined (cut-off) wavelength is selected according to the size of particle and amount, and range, of background radiation.
  • the predetermined wavelength may be in the range 500-1500nm and may be, for example, 1.2 ⁇ , 1.5 ⁇ , 1.8 ⁇ ⁇ 2 ⁇ .
  • the detector may be any low-noise detector, which is sensitive below the predetermined wavelength. Possible detectors include Silicon detectors, InGaAs, photodiodes, CCDs and electron multiplying CCDs. Although the detector is depicted as directly detecting the radiation, the radiation may be collected using one or more (optic) fibers and fed to a remote detector. This arrangement has the advantage that a bulky detector need not be located in the vicinity of the mask MA.
  • Figure 4 there are a plurality of detectors 30 arranged to detect different portions of the radiation beam, and each having their own detection cone. As there will be less background noise, when smaller portions of the radiation beam are detected, the apparatus is more sensitive.
  • Figure 4 depicts detectors distributed along the path of the projection beam. However, a plurality of detectors should also be arranged along the length (or width) of the projection beam in order to detect particles across the entire cross section of the projection beam.
  • the detector(s) 30 may be arranged to detect particles within the path of the radiation beam B and/or particles which have passed through but which may now no longer be within the path of the radiation beam.
  • a particle of about 20nm will heat up to 250°C in approximately 2ms so only needs to be in the path of the radiation beam for a short period of time for this invention to have effect.
  • the patterned EUV projection beam is generally used, an alternative illumination source may also be used, or used instead. This may be more intense and may therefore heat the particles up more, and faster than the patterned EUV projection beam.
  • a further embodiment of the invention involves detecting changes in the radiation detected. For example, if the level of radiation detected at a particular wavelength, or range of wavelengths, changes it may be determined that a particle is present. This may be useful if it would not be possible to detect the presence of a particle from the instant value of the detected radiation.
  • the EUV beam is used to heat up any particles within the path of the radiation beam.
  • detection of radiation emitted from within the path of the radiation beam should take place after the radiation beam has ceased to avoid increased background noise from the generated EUV.
  • lithographic apparatus in the manufacture of ICs
  • the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin film magnetic heads, etc.
  • LCDs liquid-crystal displays
  • any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or "target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • imprint lithography a topography in a patterning device defines the pattern created on a substrate.
  • the topography of the patterning device may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof.
  • the patterning device is moved out of the resist leaving a pattern in it after the resist is cured.
  • the term "lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
  • the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g., semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
  • a data storage medium e.g., semiconductor memory, magnetic or optical disk

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Abstract

Un rayonnement thermique est détecté en provenance d'une trajectoire d'un faisceau mis en forme. Des particules dans la trajectoire du faisceau mis en forme chauffent rapidement et rayonnent de l'énergie à une longueur d'onde plus courte que celle d'un environnement proche. Par conséquent, en détectant le rayonnement thermique, on peut détecter de quelconques particules dans la trajectoire du faisceau de projection. En cas de détection de particules, un masque peut être fixé hermétiquement ou retiré de telle sorte qu'aucune particule ne s'y colle.
PCT/EP2010/065406 2009-12-17 2010-10-14 Appareil de lithographie et son procédé de fabrication WO2011072905A1 (fr)

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US20220229371A1 (en) * 2021-01-15 2022-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for monitoring and controlling extreme ultraviolet photolithography processes

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US20040160583A1 (en) * 2000-06-01 2004-08-19 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20050083504A1 (en) * 2003-09-18 2005-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2009152885A1 (fr) * 2008-06-19 2009-12-23 Carl Zeiss Smt Ag Élimination de particules d'éléments optiques pour une microlithographie

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US5912471A (en) * 1996-10-21 1999-06-15 Sulzer Metco Ag Apparatus and method for monitoring the coating process of a thermal coating apparatus
US20040160583A1 (en) * 2000-06-01 2004-08-19 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20050083504A1 (en) * 2003-09-18 2005-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2009152885A1 (fr) * 2008-06-19 2009-12-23 Carl Zeiss Smt Ag Élimination de particules d'éléments optiques pour une microlithographie

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220229371A1 (en) * 2021-01-15 2022-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for monitoring and controlling extreme ultraviolet photolithography processes
US12085860B2 (en) * 2021-01-15 2024-09-10 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for monitoring and controlling extreme ultraviolet photolithography processes

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