WO2011071737A2 - Structures simples de vitrage solaire à faible émissivité avec facteur de réflexion réduit dans le visible - Google Patents

Structures simples de vitrage solaire à faible émissivité avec facteur de réflexion réduit dans le visible Download PDF

Info

Publication number
WO2011071737A2
WO2011071737A2 PCT/US2010/058662 US2010058662W WO2011071737A2 WO 2011071737 A2 WO2011071737 A2 WO 2011071737A2 US 2010058662 W US2010058662 W US 2010058662W WO 2011071737 A2 WO2011071737 A2 WO 2011071737A2
Authority
WO
WIPO (PCT)
Prior art keywords
layer
low
depositing
dielectric layer
emissivity
Prior art date
Application number
PCT/US2010/058662
Other languages
English (en)
Other versions
WO2011071737A3 (fr
Inventor
James G. Rietzel
Steven J. Nadel
Christoph Braatz
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2011071737A2 publication Critical patent/WO2011071737A2/fr
Publication of WO2011071737A3 publication Critical patent/WO2011071737A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3652—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the coating stack containing at least one sacrificial layer to protect the metal from oxidation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3681—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating being used in glazing, e.g. windows or windscreens

Definitions

  • Low-emissivity glass or coatings are referred to as "low-E.”
  • the coating stack may allow transmission of visible light (e.g., wavelengths of about 380-750 nm), while inhibiting transmission of infrared (IR) energy (e.g., wavelengths greater than about 700-750 nm).
  • IR infrared
  • the desired properties may change depending upon the intended use. In regions that receive lots of sunlight, windows are needed that control the transmission of sunlight. For some applications, it is desirable to control transmissions to ranges generally between about 20-60 percent of visible light.
  • Materials may be used in the protective layer that also have absorption properties in sunlight, such as a nickel chromium oxide or nickel chromium.
  • a nickel chromium oxide or nickel chromium employed as the protective layer and increase the thickness of the protective layer to further reduce visible transmissions.
  • very thick absorption layers are required. For example, to reduce solar transmission below 50 percent, this approach would require a nickel chromium oxide layer with a thickness greater than about 100 angstroms. Depositing such a thick nickel chromium oxide layer requires either adding more deposition sources or slowing down the process speeds to allow a single deposition source to run at powers which do not damage the deposition target or the coating system. This adds significant costs and inefficiencies to the deposition process.
  • a conventional low-E stack that achieves 60 percent visible transmission has a glass-side reflectance level of about 10-20 percent. When the visible transmission is reduced to 50 percent, the reflectance level increases to over 35 percent.
  • a coating stack that achieves these purposes with thinner layers.
  • a coating stack that may achieve these purposes with a single series of layers.
  • methods and systems to deposit such coating stacks more efficiently.
  • a family of coating stack designs that achieves these purposes with the minimal addition of new materials or layers, to allow for the most efficient layout of a coating system.
  • Embodiments disclosed herein generally provide improved coating stacks and production methods and systems that allow for reducing solar / visible transmissions with reduced reflectivity.
  • the inventors have discovered that adding a thin absorption layer below a reflective low-E metal layer, such as a silver layer, allows coating stacks to be developed with thinner layers that reduce visible transmissions with dramatically less reflectivity.
  • a reflective low-E metal layer such as a silver layer
  • visible transmissions may be reduced to ranges as low as about 20 percent, while reflectivity is reduced to about 20 percent or less.
  • the thin absorption layer below the reflective layer can be combined with another thin absorption layer that splits the top, protective dielectric layer.
  • the additional benefit of the second absorber layer is that by adjusting the thicknesses of the bottom and top dielectric layers, a variety of strong colored coatings (such as blue, green, gold) can made with low transmission and controlled reflectance. This provides an architect a wide range of design colors while achieving the required solar, and visible (glare) control with controlled external reflectance.
  • a low-emissivity structure for increased solar control comprising: a substrate, a bottom dielectric layer positioned above of the substrate, a bottom absorption layer positioned above the bottom dielectric layer, a reflective layer positioned above the bottom absorption layer, a protective layer positioned above the silver layer, and an upper dielectric layer positioned above the protective layer.
  • Series of layers may also be stacked, such as in a double or triple low-emissivity coating stacks.
  • the low-E structure may have a reflectivity less than about 20%.
  • the low-E structure may have a range of visible transmission less than or equal to about 70%, or 60%, or 50%, or 40%.
  • the bottom absorption layer may comprise a metal or metal nitride.
  • the metal component may be composed of Cr, Ti or various alloys containing these metals such as stainless steel or various alloys of nickel and chromium such as 80% nickel and 20% chromium.
  • the bottom absorption layer is Cr metal or Cr deposited in nitrogen to form chromium nitride.
  • the bottom absorption layer may have a thickness between about 10 to 100 angstroms, or about 15 to 75 angstroms, or about 15 to 50 angstroms, or another desired range.
  • the protective layer may also comprise at least one of the same types of metal as in the bottom absorption layer.
  • the reflective layer may comprise silver, and may have a thickness of about 1 10 angstroms or less.
  • a method is provided of depositing a low- emissivity structure for increased solar control comprising: providing a substrate, depositing a bottom dielectric layer above the substrate, depositing a bottom absorption layer above the bottom dielectric layer, depositing a silver layer above the absorption layer, depositing a protective layer above the silver layer, and depositing an upper dielectric layer above the protective layer.
  • Series of layers may also be stacked, such as in a double or triple low-emissivity coating stack.
  • Methods may also produce a low emissivity structure with a reflectivity less than about 20%.
  • the low-emissivity structure may also have a range of visible transmission less than or equal to about 70%, or 60%, or 50%, or 40%.
  • the bottom absorption layer may comprise a metal or a metal nitride.
  • the metal nitride may comprise nitrogen and chromium, or an alloy of 80% nickel and 20 % chromium.
  • the bottom absorption layer may have a thickness between about 10 to 100 angstroms, or about 15 to 75 angstroms, or about 15 to 50 angstroms, or another desired range.
  • the protective layer may also comprise at least one of the same types of metal as in the bottom absorption layer.
  • the silver layer may have a thickness of about 1 10 angstroms or less. Further, the protective layer may comprise at least one of the same types of metal as in the bottom absorption layer.
  • Figure 2 depicts a simplified version of a PVD system with a planar magnetron.
  • Figure 4 depicts a low-emissivity structure according to another embodiment of the invention.
  • substrate 2 may comprise a transparent material, such as soda lime glass.
  • a bottom dielectric layer 3 may be deposited on the substrate 2.
  • the dielectric material may be a transparent oxide or nitride, such as tin oxide, zinc oxide or silicon nitride.
  • nitrides When nitrides are used, adding small amounts of oxygen has been found to reduce thin film stress and inhibit cracking upon heating, while maintaining deposition speeds. For example, oxygen may be used in the deposition mixture at about 20% or less by volume.
  • the dielectric material may be selected to have a high index of refraction, to reduce reflection.
  • an index of refraction may be selected from a range of about 1 .8 - 2.5 based on the optical requirements for the stack.
  • a good index of refraction may be about 2.0.
  • Materials may also be mixed to optimize the desired properties. Materials may also be selected based on desired properties of adhesion, stress, chemical and mechanical durability, hardness, temperability, or other desired attributes.
  • absorption layer may be about 50 angstroms or less. In some embodiments, absorption layer may be deposited at a thickness ranging from about 5 - 15 angstroms. Additional examples are provided below.
  • Absorption layer may also be deposited by sputtering in nitrogen. Utilizing a nitride compound requires thicker layers to provide the desired absorption, but results in even lower reflectivities. Small amounts of oxygen may also be added to the bottom absorption layer, for example if the material is to be tempered.
  • a thin absorption layer of about 10-100 angstroms has been found to provide a range of visible transmissions between about 30-70%. For this range, reflectivity remains less than about 20%.
  • the thicknesses of additional absorption layer 4 may be between about 15-75 angstroms, or alternatively, between about 15-50 angstroms, depending on the desired transmission range.
  • transmission levels may be adjusted by only altering the thickness of additional absorption layer 4. This allows for greater process control, flexibility and efficiency. Entire families of coating stacks may be deposited that control solar transmissions in a range of about 20-70%, by varying the thickness or composition of absorption layer. Multiple products may be made with the same target configuration. Such variation may also allow variation in the appearance or reflected color of the coating, further providing a variety of design options to architects and designers.
  • Reflective layer 5 determines the solar transmission.
  • Silver is a suitable material that provides low emittance and high reflectivity in the solar and long wavelength region. Conventional approaches to reducing solar transmission by thickening a silver layer cause undesired levels of reflectance, for example over about 35%.
  • One embodiment of the invention provides a reflective layer 5 of silver having a thickness of about 1 10 angstroms or below.
  • Top dielectric layer 7 may be a transparent oxide or nitride, such as tin oxide, zinc oxide or silicon nitride. Top dielectric layer 7 may also comprise two or more dielectric materials (or multiple layers) deposited on top of each other. Silicon nitride is a suitable material because it is mechanically and corrosively resistant. [0031 ] The series of layers provided herein may be repeated in multiple stacks, such as in double or triple low-emissivity coating stacks. Additionally, materials may be mixed or deposited in sequence for layers such as top dielectric layer 7. For example, a tin oxide may be deposited on top of protective layer 6, followed by a scratch resistant layer of silicon nitride. Further, adding small amounts of oxygen to a nitride, such as silicon nitride, has been found to reduce thin film stress and inhibit cracking, while maintaining deposition speeds.
  • a nitride such as silicon nitride
  • FIG. 2 shows a simplified version of a PVD system 1 1 with a magnetron 12, for purposes of explanation.
  • One or more magnetrons 12 may be used in PVD systems for depositing thin films on substrates.
  • PVD systems may use various configurations, such as a chamber or an in-line arrangement.
  • a substrate 14 is positioned on a substrate support 15.
  • a sputtering target 13 is provided, which may be substantially planar or cylindrical.
  • the sputtering target 13 may be made of or coated by a material to be sputtered or deposited on substrate 14.
  • sputtering target 13 may be made from a ceramic material with an outer layer or coating of a metallic or semiconductor material to be sputtered during processing.
  • Planar magnetron 12 may be positioned above sputtering target 13. During the deposition process, a gas is introduced through gas inlet 16 into deposition enclosure 17. A plasma may be ignited, such as by an RF or DC electromagnetic field. The magnetron 12 produces a magnetic field for containing or increasing the density of a plasma (excited ions) near the sputtering target's 13 surface. Ions from the plasma may then bombard the sputtering target 13 and sputter atoms or particles from the sputtering target 13. Magnetic structures that comprise the magnetron may be moved, such as to maintain an even erosion profile. An exhaust outlet 18 is also provided.
  • Atoms or particles sputtered from the sputtering target 13 impact and deposit on the substrate 14.
  • the gas may also be selected to react with the sputtered target material ions and/or atoms to form molecules of a desired compound on the substrate 14. Reactions may take place at the sputtering target 13, at the substrate 14 or in a plasma or vapor phase region.
  • a non reactive gas, such as Argon, may also be used to slightly enhance deposition rates.
  • sputtering a silicon containing layer may be done with a silicon coated target in a mixture of 50% Ar / 50% N 2 to provide a slightly enhanced deposition rate of silicon nitride, relative to pure N 2 sputtering, while not risking depositing a layer that is more like the target material than the desired reacted compound.
  • Silicon containing layers may also be deposited with cylindrical magnetrons, using a cylindrical target with a magnetic structure inside it.
  • planar targets 13 may be used.
  • a planar target comprising a nickel-chromium alloy may be used to sputter absorption layer 4.
  • a planar target comprising silver may be used to sputter reflective layer 5.
  • another planar target comprising a nickel-chromium alloy may be used to sputter protective layer 6.
  • Example 1 A transmission level of about 40% was obtained on a glass substrate with a bottom dielectric layer of 175 angstroms of tin oxide, an additional absorption layer of 50 angstroms of chromium, a silver layer of 105 angstroms, a protective layer of nickel chromium of a small amount referred to as a whisp, and top dielectric layers of 210 angstroms of tin oxide followed by 210 angstroms of silicon nitride.
  • a whisp represents a thickness in a range of about 5 to about 15 angstroms.
  • Rf stands for the amount of reflection measured on the coating or "film” side of the glass.
  • Rg stands for the amount of reflection measured on the uncoated or "glass” side of the glass.
  • the symbols “a*” and “b*” are coordinates on an x-y axis that measures color.
  • An example color chart is shown in Figure 3, with respective colors labeled. Colors are designated by the x-y coordinates on the chart. Yellow is designated with "+ b*.” Red is designated as "+ a*.” Blue is designated as "- b*.” And green is designated as "- a*.”
  • points A and B in Figure 3 illustrate colors with different hues.
  • Example 2 A transmission level of about 52% was obtained on a glass substrate (5 mm) with a bottom dielectric layer of 400 angstroms of tin oxide, an additional absorption layer of 35 angstroms of chromium, a silver layer of 1 10 angstroms, a protective layer of a whisp of nickel chromium, and top dielectric layers of 250 angstroms of tin oxide followed by 150 angstroms of silicon nitride. Average cross coater measurements are provided in Table 2 below.
  • FIG. 4 depicts a low-emissivity structure 400 according to another embodiment of the invention.
  • the low-emissivity structure 400 comprises a series of thin film layers are deposited on a substrate 402.
  • the substrate 402 may be the same or similar to the substrate 2 as described above.
  • the low-emissivity structure 400 includes a bottom dielectric layer 404, an optional reflection reducing layer 406, a lower absorption layer 408, a reflective layer 410, a protective layer 412, a middle dielectric layer 414, an upper absorption layer 416 and a top dielectric layer 418.
  • the optional reflection reducing layer 406 may be Ti0 2 or other suitable material that counteracts the reflection generated by the reflective layer 410.
  • the use of the optional reflection reducing layer 406 allows for reduced sunlight transmittance by allowing the use of a thicker reflective layer 410 without a corresponding increase in reflectance as would be realized in conventional film stacks.
  • the bottom dielectric layer 404, reflective layer 410, protective layer 412 may be fabricated from materials as described above with reference to the embodiment of Figure 1 .
  • the upper and lower absorption layers may comprise a suitable metal, metal alloy or metal nitride that exhibits good light absorption and low reflectance, such as the materials described above with reference to the absorption layer 4 of Figure 1 .
  • Table 5 provides examples of thickness ranges in nm for the films of the structure 400. For the absorbing layer having a bottom value of "0" indicates that one or more of the absorbing layers may be used (i.e., either bottom absorbing layer 408 or top absorbing layer 416 alone, or with both absorbing layers together).
  • the top absorption layer disposed between the middle and top dielectric layer produces the same advantageous low transmission and low reflectivity benefits of embodiments described above, and advantageously provides the ability to produce strong colors, such as gold, blue and green, which are desirable in Asian- Pacific markets, by tuning the relative thicknesses of the constituent layers of the structure 400.
  • a gold color may be obtained by utilizing about a 10nm lower dielectric layer 404, about a 10nm reflection reducing layer 406, about a 7nm lower absorption layer 408, about a 13nm reflective layer 410, about a 3nm protective layer 412, about a 67nm middle dielectric layer 414, about a 7nm upper absorption layer 416 and about a 10nm top dielectric layer 418.
  • the strength of the gold color may be increased by increasing the thickness of the reflection reducing layer 406 and top dielectric layer 418, while reducing the thickness of the lower absorption layer 408, the reflective layer 410, the middle dielectric layer 414, and the upper absorption layer 416.
  • the thickness of the upper absorption layer 416 may be reduced to about zero or even eliminated to produce a strong gold color.
  • a blue color may be obtained by utilizing about a 15nm lower dielectric layer 404, about a 35nm reflection reducing layer 406, about a 10.5nm lower absorption layer 408, about a 10nm reflective layer 410, about a 4nm protective layer 412, about a 40nm middle dielectric layer 414, about a 10.5nm upper absorption layer 416 and about a 30nm top dielectric layer 418.
  • the strength of the blue color may be increased by reducing the thickness of the lower absorption layer 408 and the upper absorption layer 416.
  • a green color may be obtained by utilizing about a 15nm lower dielectric layer 404, about a 65nm reflection reducing layer 406, about a 9.5nm lower absorption layer 408, about a 10nm reflective layer 410, about a 4nm protective layer 412, about a 30nm middle dielectric layer 414, about a 9.5nm upper absorption layer 416 and about a 30nm top dielectric layer 418.
  • the strength of the green color may be increased by reducing the thickness of the lower absorption layer 408 and the upper absorption layer 416.
  • FIG. 5 depicts a stacked low-emissivity structure 500 according to another embodiment of the invention.
  • the stacked low-emissivity structure 500 comprises a base film stack 502 deposited on a substrate 402, with one or more capping film stacks 504 deposited on the base film stack 502.
  • the base film stack 502 maybe configured as any of the structures described above, for example as the structure 1 or structure 400.
  • the capping film stack 504 includes an optional capping base dielectric layer 505, a capping reflective layer 506, a capping protective layer 508, and a capping dielectric layer 510.
  • the optional capping base dielectric layer 505 is utilized to adjust the total thickness of the internal dielectric layers (414/418) of the structure 500.
  • the inner dielectric layers are generally about 1 -1/2 to 2 times as thick as the bottom dielectric layer 404 (next to glass) and the top (protective) capping dielectric layer 510.
  • an appropriate thickness of capping base dielectric layer 505 may be utilized to compensate of for the difference in the thickness.
  • the capping dielectric layer 510 may be configured as a middle dielectric layer and top dielectric layer sandwiching an absorption layer as described with reference to Figure 4.
  • the capping reflective layer 506, capping protective layer 508, and the capping dielectric layer 510 may be fabricated from materials as described above with reference to the embodiment of Figure 1 .
  • the capping reflective layer 506 is deposited in the top dielectric layer 418 of the base film stack 502, or on the capping dielectric layer 510 of the underlying capping film stack 504. Table 6 provides examples of thickness ranges in nm for the films of the capping film stack 504.
  • the stacked low-emissivity structure 500 provides the ability to control solar transmission, resulting reduced heat load on buildings and lower air conditioning costs.
  • the stacked low-emissivity structure 500 advantageously provides the ability to reach even lower transmission values with very low outside reflectance as compared to conventional coated glass.
  • the structures may be toughen by tempering.
  • the tempering process may be or traditional low-emissivity tempering process as known or any other suitable tempering process.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

La présente invention concerne des structures à faible émissivité ainsi que des procédés destinés à réduire des émissions solaires ou visibles avec une réflectivité réduite, tel que pour du verre architectural. La réflectivité peut être inférieure à 20 % environ lorsque les émissions visibles sont entre environ 20 et 70 %. Une couche d'absorption peut être fournie sur un côté et/ou sur les deux côtés de la couche d'argent, de façon à augmenter l'absorption sans épaissir excessivement les autres couches. Dans un mode de réalisation, une structure à faible émissivité avec facteur de réflexion réduit peut comprendre un substrat de verre, un diélectrique inférieur, une couche d'absorption constituée de métal ou de nitrure de métal, une couche d'argent, une couche de protection constituée de métal ou de nitrure de métal, et un diélectrique supérieur. La couche d'absorption inférieure peut avoir une épaisseur d'environ 5 à 75 angströms.
PCT/US2010/058662 2009-12-10 2010-12-02 Structures simples de vitrage solaire à faible émissivité avec facteur de réflexion réduit dans le visible WO2011071737A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US28532709P 2009-12-10 2009-12-10
US61/285,327 2009-12-10
US31676410P 2010-03-23 2010-03-23
US61/316,764 2010-03-23

Publications (2)

Publication Number Publication Date
WO2011071737A2 true WO2011071737A2 (fr) 2011-06-16
WO2011071737A3 WO2011071737A3 (fr) 2011-11-17

Family

ID=44146113

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/058662 WO2011071737A2 (fr) 2009-12-10 2010-12-02 Structures simples de vitrage solaire à faible émissivité avec facteur de réflexion réduit dans le visible

Country Status (2)

Country Link
TW (1) TW201139313A (fr)
WO (1) WO2011071737A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109336407A (zh) * 2018-11-05 2019-02-15 天津北玻玻璃工业技术有限公司 双银低辐射镀膜玻璃

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3194477A4 (fr) 2014-09-15 2018-05-30 Saint-Gobain Performance Plastics Corporation Film optique comportant une couche d'absorption infrarouge
US10571610B2 (en) 2014-11-21 2020-02-25 Saint-Gobain Performance Plastics Corporation Infra-red control optical films having metal nitride between encapsulating layers containing oxide
TWI557473B (zh) * 2015-07-09 2016-11-11 Polymeric Dispersion Liquid Crystal Dimming Structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887575B2 (en) * 2001-10-17 2005-05-03 Guardian Industries Corp. Heat treatable coated article with zinc oxide inclusive contact layer(s)
US20090136765A1 (en) * 2007-11-23 2009-05-28 Agc Flat Glass North America, Inc. Low emissivity coating with low solar heat gain coefficient, enhanced chemical and mechanical properties and method of making the same
US7592068B2 (en) * 2005-01-19 2009-09-22 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Heat treatable coated article with zirconium silicon oxynitride layer(s) and methods of making same
KR20090099364A (ko) * 2008-03-17 2009-09-22 주식회사 케이씨씨 내구성이 우수한 열처리 가능한 저방사 유리 및 그제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6887575B2 (en) * 2001-10-17 2005-05-03 Guardian Industries Corp. Heat treatable coated article with zinc oxide inclusive contact layer(s)
US7592068B2 (en) * 2005-01-19 2009-09-22 Centre Luxembourgeois De Recherches Pour Le Verre Et La Ceramique S.A. (C.R.V.C.) Heat treatable coated article with zirconium silicon oxynitride layer(s) and methods of making same
US20090136765A1 (en) * 2007-11-23 2009-05-28 Agc Flat Glass North America, Inc. Low emissivity coating with low solar heat gain coefficient, enhanced chemical and mechanical properties and method of making the same
KR20090099364A (ko) * 2008-03-17 2009-09-22 주식회사 케이씨씨 내구성이 우수한 열처리 가능한 저방사 유리 및 그제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109336407A (zh) * 2018-11-05 2019-02-15 天津北玻玻璃工业技术有限公司 双银低辐射镀膜玻璃

Also Published As

Publication number Publication date
TW201139313A (en) 2011-11-16
WO2011071737A3 (fr) 2011-11-17

Similar Documents

Publication Publication Date Title
US7534497B2 (en) Temperable high shading performance coatings
US7687149B2 (en) High shading performance coatings
US11709297B2 (en) Articles coated with coatings containing light absorption materials
US7473471B2 (en) Coating composition with solar properties
US20130070340A1 (en) Antireflective coating and substrates coated therewith
JP7369696B2 (ja) 日射調整コーティング及び日射調整コーティングを形成する方法
KR20080109899A (ko) 피복 판유리
CN101119941A (zh) 用于光学涂层的可空气氧化的防划痕防护层
GB2324098A (en) Solar control coated glass
WO2011071737A2 (fr) Structures simples de vitrage solaire à faible émissivité avec facteur de réflexion réduit dans le visible
JP2022511863A (ja) コーティングされたガラス板
CN112585100B (zh) 在银下方具有掺杂的晶种层的低-e可匹配涂覆制品以及对应的方法
EP4007744A1 (fr) Substrat revêtu
CN114430732B (zh) 具有吸收膜的低e可匹配涂覆制品及相应方法
WO2020188477A1 (fr) Articles revêtus pouvant être mis en correspondance à faible émissivité comprenant un film absorbeur et procédés correspondants
WO2021159126A1 (fr) Articles revêtus pouvant être mis en correspondance à faible émissivité comprenant un film absorbeur et procédés correspondants

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10836439

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10836439

Country of ref document: EP

Kind code of ref document: A2