WO2011065745A3 - Light-emitting diode package - Google Patents

Light-emitting diode package Download PDF

Info

Publication number
WO2011065745A3
WO2011065745A3 PCT/KR2010/008353 KR2010008353W WO2011065745A3 WO 2011065745 A3 WO2011065745 A3 WO 2011065745A3 KR 2010008353 W KR2010008353 W KR 2010008353W WO 2011065745 A3 WO2011065745 A3 WO 2011065745A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting diodes
emitting diode
diode package
efficiency
Prior art date
Application number
PCT/KR2010/008353
Other languages
French (fr)
Korean (ko)
Other versions
WO2011065745A2 (en
Inventor
이종람
손준호
Original Assignee
서울옵토디바이스주식회사
포항공과대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090116121A external-priority patent/KR101614490B1/en
Priority claimed from KR1020090116120A external-priority patent/KR101712093B1/en
Application filed by 서울옵토디바이스주식회사, 포항공과대학교 산학협력단 filed Critical 서울옵토디바이스주식회사
Publication of WO2011065745A2 publication Critical patent/WO2011065745A2/en
Publication of WO2011065745A3 publication Critical patent/WO2011065745A3/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

Disclosed is a light-emitting diode package, comprising high-output and high-efficiency light-emitting diodes in which the efficiency droop phenomenon, which occurs in response to the injection of high current, is prevented to achieve improved light emission efficiency. The light-emitting diode package is configured such that the surface of a base on which the light-emitting diodes are to be attached is curved by means of a device or a specific structure, and the light-emitting diodes are die-bonded to the curved surface so as to enable the light-emitting diodes to be bent by the curvature of the curved surface. Here, stresses are applied to the light-emitting diodes, thus causing changes in a band structure of a quantum well layer. In the thus-produced light-emitting diode package, efficiency droop, which occurs in response to the injection of high current, is reduced to achieve the high output and high efficiency of the package.
PCT/KR2010/008353 2009-11-27 2010-11-24 Light-emitting diode package WO2011065745A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090116121A KR101614490B1 (en) 2009-11-27 2009-11-27 Light Emitting Diode package
KR1020090116120A KR101712093B1 (en) 2009-11-27 2009-11-27 vertical LED package having Curvature of the bottom
KR10-2009-0116120 2009-11-27
KR10-2009-0116121 2009-11-27

Publications (2)

Publication Number Publication Date
WO2011065745A2 WO2011065745A2 (en) 2011-06-03
WO2011065745A3 true WO2011065745A3 (en) 2011-09-15

Family

ID=44067096

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/008353 WO2011065745A2 (en) 2009-11-27 2010-11-24 Light-emitting diode package

Country Status (1)

Country Link
WO (1) WO2011065745A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI418742B (en) * 2011-06-30 2013-12-11 Lextar Electronics Corp Optical brightening led package
FR3023978A1 (en) * 2014-07-18 2016-01-22 Commissariat Energie Atomique OPTOELECTRONIC DEVICE WITH ELECTROLUMINESCENT DIODE
CN109075224B (en) * 2016-04-08 2021-10-26 斯坦雷电气株式会社 Semiconductor wafer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087749A (en) * 2002-08-27 2004-03-18 Fujitsu Ltd Semiconductor light device having quantum dot
KR20050077915A (en) * 2004-01-29 2005-08-04 삼성코닝 주식회사 Sapphire/gallium nitride laminate having reduced bending deformation
JP2009505377A (en) * 2005-08-17 2009-02-05 日本碍子株式会社 Semiconductor laminated structure, method for forming the same, and light emitting device
KR20090015513A (en) * 2007-08-09 2009-02-12 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR20100024231A (en) * 2008-08-25 2010-03-05 삼성전자주식회사 Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004087749A (en) * 2002-08-27 2004-03-18 Fujitsu Ltd Semiconductor light device having quantum dot
KR20050077915A (en) * 2004-01-29 2005-08-04 삼성코닝 주식회사 Sapphire/gallium nitride laminate having reduced bending deformation
JP2009505377A (en) * 2005-08-17 2009-02-05 日本碍子株式会社 Semiconductor laminated structure, method for forming the same, and light emitting device
KR20090015513A (en) * 2007-08-09 2009-02-12 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR20100024231A (en) * 2008-08-25 2010-03-05 삼성전자주식회사 Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

Also Published As

Publication number Publication date
WO2011065745A2 (en) 2011-06-03

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