WO2011065745A3 - Light-emitting diode package - Google Patents
Light-emitting diode package Download PDFInfo
- Publication number
- WO2011065745A3 WO2011065745A3 PCT/KR2010/008353 KR2010008353W WO2011065745A3 WO 2011065745 A3 WO2011065745 A3 WO 2011065745A3 KR 2010008353 W KR2010008353 W KR 2010008353W WO 2011065745 A3 WO2011065745 A3 WO 2011065745A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- emitting diodes
- emitting diode
- diode package
- efficiency
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Disclosed is a light-emitting diode package, comprising high-output and high-efficiency light-emitting diodes in which the efficiency droop phenomenon, which occurs in response to the injection of high current, is prevented to achieve improved light emission efficiency. The light-emitting diode package is configured such that the surface of a base on which the light-emitting diodes are to be attached is curved by means of a device or a specific structure, and the light-emitting diodes are die-bonded to the curved surface so as to enable the light-emitting diodes to be bent by the curvature of the curved surface. Here, stresses are applied to the light-emitting diodes, thus causing changes in a band structure of a quantum well layer. In the thus-produced light-emitting diode package, efficiency droop, which occurs in response to the injection of high current, is reduced to achieve the high output and high efficiency of the package.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090116121A KR101614490B1 (en) | 2009-11-27 | 2009-11-27 | Light Emitting Diode package |
KR1020090116120A KR101712093B1 (en) | 2009-11-27 | 2009-11-27 | vertical LED package having Curvature of the bottom |
KR10-2009-0116120 | 2009-11-27 | ||
KR10-2009-0116121 | 2009-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011065745A2 WO2011065745A2 (en) | 2011-06-03 |
WO2011065745A3 true WO2011065745A3 (en) | 2011-09-15 |
Family
ID=44067096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/008353 WO2011065745A2 (en) | 2009-11-27 | 2010-11-24 | Light-emitting diode package |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2011065745A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI418742B (en) * | 2011-06-30 | 2013-12-11 | Lextar Electronics Corp | Optical brightening led package |
FR3023978A1 (en) * | 2014-07-18 | 2016-01-22 | Commissariat Energie Atomique | OPTOELECTRONIC DEVICE WITH ELECTROLUMINESCENT DIODE |
CN109075224B (en) * | 2016-04-08 | 2021-10-26 | 斯坦雷电气株式会社 | Semiconductor wafer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004087749A (en) * | 2002-08-27 | 2004-03-18 | Fujitsu Ltd | Semiconductor light device having quantum dot |
KR20050077915A (en) * | 2004-01-29 | 2005-08-04 | 삼성코닝 주식회사 | Sapphire/gallium nitride laminate having reduced bending deformation |
JP2009505377A (en) * | 2005-08-17 | 2009-02-05 | 日本碍子株式会社 | Semiconductor laminated structure, method for forming the same, and light emitting device |
KR20090015513A (en) * | 2007-08-09 | 2009-02-12 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
KR20100024231A (en) * | 2008-08-25 | 2010-03-05 | 삼성전자주식회사 | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
-
2010
- 2010-11-24 WO PCT/KR2010/008353 patent/WO2011065745A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004087749A (en) * | 2002-08-27 | 2004-03-18 | Fujitsu Ltd | Semiconductor light device having quantum dot |
KR20050077915A (en) * | 2004-01-29 | 2005-08-04 | 삼성코닝 주식회사 | Sapphire/gallium nitride laminate having reduced bending deformation |
JP2009505377A (en) * | 2005-08-17 | 2009-02-05 | 日本碍子株式会社 | Semiconductor laminated structure, method for forming the same, and light emitting device |
KR20090015513A (en) * | 2007-08-09 | 2009-02-12 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
KR20100024231A (en) * | 2008-08-25 | 2010-03-05 | 삼성전자주식회사 | Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device |
Also Published As
Publication number | Publication date |
---|---|
WO2011065745A2 (en) | 2011-06-03 |
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