WO2011062283A1 - Système optique d'imagerie par réflexion, appareil d'exposition et procédé de production de dispositif - Google Patents

Système optique d'imagerie par réflexion, appareil d'exposition et procédé de production de dispositif Download PDF

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Publication number
WO2011062283A1
WO2011062283A1 PCT/JP2010/070751 JP2010070751W WO2011062283A1 WO 2011062283 A1 WO2011062283 A1 WO 2011062283A1 JP 2010070751 W JP2010070751 W JP 2010070751W WO 2011062283 A1 WO2011062283 A1 WO 2011062283A1
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WO
WIPO (PCT)
Prior art keywords
optical system
imaging optical
reflecting
reflective imaging
reflecting mirror
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PCT/JP2010/070751
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English (en)
Inventor
Takuro Ono
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Nikon Corporation
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Priority to KR1020177013724A priority Critical patent/KR20170060172A/ko
Publication of WO2011062283A1 publication Critical patent/WO2011062283A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Definitions

  • the present invention relates to a reflective (catoptric) imaging optical system, an exposure apparatus, and a method for producing a device.
  • the present invention relates to a reflective imaging optical system preferably useable for an exposure apparatus which uses the EUV light (EUV light beam) and transfers, onto a photosensitive substrate, a circuit pattern on a mask for example in accordance with the mirror projection system.
  • EUV light EUV light beam
  • Ultraviolet Lithography Exposure Light beam
  • any usable transmissive optical material and any useable dioptric optical material are absent.
  • a reflection type mask is used, and a reflective optical system (optical system constructed of only
  • reflective imaging optical system of the near pupil type is referred to as "reflective imaging optical system of the near pupil type”
  • the "reflective imaging optical system having the incident pupil disposed on the side opposite to the optical system with the object plane intervening therebetween” is referred to as “reflective imaging optical system of the far pupil type”.
  • the former is also referred to as “reflective imaging optical system of the normal pupil type” and the latter is also referred to as “reflective imaging optical system of the opposite pupil type”.
  • the reflective imaging optical system of the near pupil type is adopted as the projection optical system of the EUVL exposure apparatus, it is necessary that a condenser optical system is arranged in an optical path between a mask and an optical integrator in an illumination optical system. Therefore, the optical efficiency (light efficiency) is lowered due to the increase in the number of mirrors. On the contrary, when the reflective imaging optical system of the far pupil type is adopted, it is unnecessary to arrange any condenser optical system.
  • Patent Literature 1 a distance which is provided along the optical axis between the incident pupil and the object plane (hereinafter simply referred to as "incident pupil distance" as well) is relatively short. Therefore, any overlay error (overlap error) tends to arise in relation to respective illumination fields formed on the mask by respective light fluxes subjected to the wavefront division by a first fly's eye optical system of the optical
  • a reflective imaging optical system which forms, on a second plane, an image of an object arranged on a first plane, the reflective imaging optical system comprising: an incident pupil which is positioned on a side opposite to the reflective imaging optical system with the first plane intervening
  • PD represents a distance along an optical axis between the incident pupil and the first plane
  • TT represents a distance along the optical axis between the first plane and the second plane
  • R represents an angle of incidence (rad) of a main light beam coming into the first plane:
  • an illumination optical system which illuminates a predetermined pattern as the object arranged on the first plane with a light from a light source, and the reflective imaging optical system as defined in the first aspect which projects the predetermined pattern onto a photosensitive substrate arranged on the second plane.
  • a method for producing a device comprising: exposing the photosensitive substrate with the predetermined pattern by using the exposure apparatus as defined in the second aspect; developing the photosensitive substrate to which the predetermined pattern has been transferred to form a mask layer, which has a shape corresponding to the predetermined pattern, on a surface of the photosensitive substrate; and processing the surface of the photosensitive substrate via the mask layer.
  • the required condition is fulfilled by the distance PD which is provided along the optical axis between the incident pupil and the first plane, the distance TT which is provided along the optical axis between the first plane and the second plane, and the angle of incidence of the main light beam which comes (is allowed to come) into the first plane. Accordingly, it is possible to realize the reflective imaging optical system of the far pupil type in which the incident pupil distance is secured to be relatively large and the aberration is satisfactorily corrected. As a result, the overlay error (overlap error) of the respective illumination fields can be suppressed to be small in the illumination optical system which is used in combination with the reflective imaging optical system of the present invention.
  • the EUV light which has a wavelength of, for example, 5 nm to 40 nm, can be used as the exposure light (exposure light beam) .
  • the pattern of the mask can be projected onto the exposure light (exposure light beam)
  • Fig. 1 schematically shows a construction of an exposure apparatus according to an embodiment of the present invention.
  • Fig. 2 shows a positional relationship between an optical axis and a circular arc-shaped effective imaging area formed on a wafer.
  • Fig. 3 schematically shows a basic construction of reflective imaging optical systems according to respective specified embodiments concerning the embodiment of the present invention.
  • Fig. 4 schematically shows a construction of a reflective imaging optical system according to a first embodiment .
  • Fig. 5 schematically shows a construction of a reflective imaging optical system according to a second embodiment .
  • Fig. 6 schematically shows a construction of a reflective imaging optical system according to a third embodiment .
  • Fig. 7 schematically shows a construction of a reflective imaging optical system according to a fourth embodiment .
  • Fig. 8 schematically shows a construction of a reflective imaging optical system according to a fifth embodiment .
  • Fig. 9 schematically shows a construction of a reflective imaging optical system according to a sixth embodiment .
  • Fig. 10 schematically shows a construction of a reflective imaging optical system according to a seventh embodiment .
  • Fig. 11 schematically shows a construction of a reflective imaging optical system according to an eighth embodiment .
  • Fig. 12 shows a flow chart concerning an exemplary technique adopted when a semiconductor device is obtained as a microdevice by way of example.
  • Fig. 1 schematically shows a construction of an exposure apparatus according to the embodiment of the present invention.
  • Fig. 2 shows a positional relationship between an optical axis and a circular arc-shaped effective imaging area formed on a wafer.
  • the Z axis is defined in the direction of the optical axis AX of a reflective imaging optical system 6, i.e., in the normal line direction of an exposure surface (transfer surface) of the wafer 7 provided as a photosensitive substrate
  • the Y axis is defined in the direction parallel to the sheet surface of Fig.
  • a light source 7 which is provided to supply the exposure light includes, for example, a laser plasma X-ray source.
  • Those usable as the light source 1 include discharge plasma light sources and other X-ray sources.
  • the light (light beam) radiated from the light source 1 comes into an illumination optical system IL, via an optionally arranged wavelength selection filter (not shown) .
  • the wavelength selection filter has such a characteristic that only the EUV light having a predetermined wavelength (for example, 13.5 nm) , which is included in the lights supplied by the light source 1, is selectively transmitted through the wavelength selection filter, and the transmission of the lights having other wavelengths is shielded or shut off by the wavelength selection filter.
  • the EUV light via (which is allowed to pass through) the wavelength selection filter is guided to an optical integrator which is constructed of a pair of fly's eye optical systems (fly's eye mirrors) 2a, 2b.
  • the first fly's eye optical system 2a has a plurality of first reflecting optical elements which are arranged in juxtaposition or in parallel.
  • the second fly's eye optical system 2b has a plurality of second reflecting optical elements which are arranged in juxtaposition or in parallel to correspond to the plurality of first reflecting optical elements of the first fly's eye optical system 2a.
  • the first fly's eye optical system 2a is constructed, for example, by arranging a large number of concave mirror elements, having circular arc-shaped outer shapes, densely, laterally and longitudinally.
  • the second fly's eye optical system 2b is constructed, for example, by arranging a large number of concave mirror elements, which have rectangular outer shapes, densely, laterally and longitudinally.
  • a substantial surface light source which has a predetermined shape, is formed in the vicinity of the reflecting surface of the second fly's eye optical system 2b.
  • the substantial surface light source is formed at the position of the exit pupil (exit pupil position) of the illumination optical system IL constructed of the pair of fly's eye optical systems 2a, 2b.
  • the exit pupil position of the illumination optical system IL i.e., the position in the vicinity of the reflecting surface of the second fly's eye optical system 2b
  • the light from the substantial surface light source i.e., the light exiting or irradiated from the illumination optical system IL is reflected by an oblique incidence mirror 3, and then the light forms a circular arc-shaped illumination area on a mask 4 via a circular arc-shaped aperture (light-transmitting portion) of a field stop (not shown) which is arranged closely to the
  • the light source 1 and the illumination optical system IL (2a, 2b) constitute an illumination system which is provided to perform the Koehler
  • No reflecting mirror having any power is arranged in the optical path between the second fly's eye optical system 2b and the mask 4.
  • the power of the reflecting mirror is a reciprocal of the focal length or focal distance of the concerning reflecting mirror. It is a matter of course that the reflecting mirror having any power may be arranged.
  • the mask 4 is held by a mask stage 5 which is movable in the Y direction so that the pattern surface of the mask 4 extends along the XY plane.
  • the movement of the mask stage 5 is measured by a laser interferometer and an encoder which are omitted from the illustration.
  • a circular arc-shaped illumination area which is symmetrical in relation to the Y axis, is formed on the mask 4.
  • the light which comes from the illuminated mask 4, forms a pattern image of the mask 4 on a wafer 7 as a photosensitive substrate, via the reflective imaging optical system 6.
  • a circular arc-shaped effective imaging area (static exposure area) ER which is symmetrical in relation to the Y axis, is formed on the wafer 7.
  • the circular arc-shaped effective imaging area ER which has a length LX in the X direction and which has a length LY in the Y direction, is formed so that the circular arc-shaped effective imaging area ER is brought in contact with an image circle IF in the circular area (image circle) IF which has a radius Y0 about the center of the optical axis AX.
  • the circular arc-shaped effective imaging area ER is a part of the annular or zonal area provided about the center of the optical axis AX.
  • the length LY is the widthwise dimension of the effective imaging area ER provided in the direction connecting the optical axis and the center of the circular arc-shaped effective imaging area ER.
  • the wafer 7 is held by a wafer stage 8 which is two-dimensionally movable in the X direction and the Y direction so that the exposure surface of the wafer 7 extends along the XY plane.
  • the movement of the wafer stage 8 is measured by a laser interferometer and an encoder which are omitted from the illustration, in the same manner as the mask stage 5.
  • the scanning exposure scanning and exposure
  • the pattern of the mask 4 is transferred to an exposure area of the wafer 7.
  • the synchronous scanning is performed by setting the movement velocity of the wafer stage 8 to 1/4 of the movement velocity of the mask stage 5.
  • the pattern of the mask 4 is successively transferred to the respective exposure areas of the wafer 7 by repeating the scanning exposure while two-dimensionally moving the wafer stage 8 in the X direction and the Y direction.
  • the reflective imaging optical system 6 concerning each of specified embodiments includes a first reflective optical system Gl which is provided to form an intermediate image of the pattern at a position optically conjugate with the pattern surface of the mask 4; and a second reflective optical system G2 which is provided to form, on the wafer 7, a final reduced image (image of the intermediate image) of the pattern of the mask 4, along the single optical axis AX extending in a form of straight line. That is, the plane, which is optically conjugate with the pattern surface of the mask 4, is formed in the optical path between the first reflective optical system Gl and the second reflective optical system G2.
  • the first reflective optical system Gl includes a first reflecting mirror Ml which has a concave (concave surface-shaped) reflecting surface, a second reflecting mirror M2 which has a convex (convex surface-shaped) or concave reflecting surface, a third reflecting mirror M3 which has a convex reflecting surface, and a fourth
  • the second reflective optical system G2 includes a fifth reflecting mirror M5 which has a convex reflecting surface, and a sixth reflecting mirror M6 which has a concave reflecting surface as referred to in an order of the incidence of the light.
  • An aperture stop AS is provided in the optical path ranging from the second reflecting mirror M2 to the third reflecting mirror M3. Any aperture stop other than the aperture stop AS is not arranged in the optical path of the reflective imaging optical system 6.
  • the numerical aperture of the reflective imaging optical system 6 is determined by only the limitation of the light flux by the aperture stop AS.
  • the light which comes from an area (illumination area) separated from the optical axis AX on the pattern surface of the mask 4 (first plane), is successively reflected by the concave reflecting surface of the first reflecting mirror Ml, the convex or concave reflecting surface of the second reflecting mirror M2, the convex reflecting surface of the third reflecting mirror M3, and the concave
  • the light which comes from the intermediate image formed via the first reflective optical system Gl, is successively reflected by the convex reflecting surface of the fifth reflecting mirror M5 and the concave reflecting surface of the sixth reflecting mirror M6, and then the light forms the reduced image of the mask pattern in an area (effective imaging area ER) separated from the optical axis AX on the surface of the wafer 7 (second plane) .
  • the reflective imaging optical system 6 includes the six reflecting mirrors Ml to M6 in which the centers of curvature of the reflecting surfaces are arranged on the same axis (on the optical axis AX) . That is, the
  • reflective imaging optical system 6 is provided with the six reflecting mirrors Ml to M6, and all of the six
  • reflecting mirrors Ml to M6 are provided so that the centers of curvature of the reflecting surfaces are
  • All of the reflecting mirrors Ml to M6 have the reflecting
  • the reflective imaging optical system 6 is the optical system which is substantially telecentric on the side of the wafer (on the side of the image) .
  • the main light beam, which arrives at the respective positions on the image plane of the reflective imaging optical system 6, is substantially perpendicular to the image plane. Owing to this
  • the imaging can be performed satisfactorily even when irregularities (protrusions and recesses) are present on the wafer within the depth of focus of the reflective imaging optical system 6.
  • the reflective imaging optical system 6 concerning each of the specified embodiments is the reflective imaging optical system of the far pupil type which has the incident pupil, at the position separated by a predetermined distance, on the side opposite to the reflective imaging optical system 6 with the mask 4 intervening therebetween.
  • the incident pupil distance PD which relates to the reflective imaging optical system of the far pupil type, corresponds to the focal length of the condenser optical system of the
  • illumination optical system to be used in combination with the reflective imaging optical system of the near pupil type In the illumination optical system to be used in combination with the reflective imaging optical system of the near pupil type, by setting the focal length of the condenser optical system to be relatively large, it is possible to suppress the overlay error to be small for the respective illumination fields formed on the mask by the respective light fluxes subjected to the wavefront division by the plurality of circular arc-shaped reflecting mirror elements constructing the first fly's eye optical system.
  • the illumination optical system to be used in combination with the reflective imaging optical system of the far pupil type by securing the incident pupil distance PD of the reflective imaging optical system be relatively large, it is possible to suppress the overlay error to be small for the respective illumination fields.
  • the large incident pupil distance PD in the reflective imaging optical system of the far pupil type it is necessary that the absolute value of the angle of incidence R of the main light beam coming into the center of the effective field on the object side (mask side) is suppressed to be small, or that the center of the effective field is separated relatively largely from the optical axis.
  • the reflection type mask is used in the EUVL exposure apparatus. Therefore, if the absolute value of the angle of incidence R of the main light beam coming into the mask surface (pattern surface of the mask) is made to be excessively small (is excessively decreased) , it is difficult to separate the light flux coming into the mask from the light flux reflected by the mask. Therefore, in order to secure the large incident pupil distance PD while maintaining the angle of incidence R of the main light beam coming into the mask surface within the required angle range, it is necessary that the center of the effective field is separated from the optical axis relatively
  • conditional expression (1) is fulfilled by the distance PD along the optical axis between the mask surface
  • the ratio PD/TT of the incident pupil distance PD with respect to the total length TT of the reflective imaging optical system is excessively decreased (is made to be excessively small) , then the distance between the optical axis and the center of the effective field is decreased, and it is difficult to separate the respective reflecting mirrors of the reflective imaging optical system and the light flux allowed to pass along the vicinity thereof. If it is intended to avoid the interference between the respective reflecting mirrors and the light flux in a state that the PD/TT is small, then the
  • the reflecting mirrors are increased, and the reflectances of the respective reflecting mirrors are consequently lowered, for the following reason. That is, in the reflective imaging optical system using the EUV light, the reflecting surface of each of the reflecting mirrors is formed of a multilayer film, and it is required to decrease the angle of incidence of the light coming into each of the
  • the conditional expression (1) is fulfilled by the incident pupil distance PD, the total length TT of the optical system, and the angle of incidence R of the main light beam coming into the mask surface, and thus it is possible to realize the reflective imaging optical system of the far pupil type in which the incident pupil distance PD is secured to be relatively large and the aberration is corrected satisfactorily.
  • the overlay error can be suppressed to be small for the respective illumination fields.
  • the upper limit value of the conditional expression (1) can be set to -8.6.
  • the lower limit value of the conditional expression (1) can be set to - 13.7.
  • the aspherical surface is expressed by the following numerical expression (a) provided that y represents the height in the direction perpendicular to the optical axis, z represents the distance (sag amount) along the optical axis from the tangent plane, at the apex of the aspherical surface, to the position on the aspherical surface at the height y, r represents the apex radius of curvature, ⁇ represents the conical coefficient, and C n represents the n-order
  • Fig. 4 shows a construction of a reflective imaging optical system according to a first embodiment of the embodiment of the present invention.
  • the light from the mask 4 is successively reflected by the concave reflecting surface of the first reflecting mirror Ml, the convex reflecting surface of the second reflecting mirror M2, the convex reflecting surface of the third reflecting mirror M3, and the concave
  • the intermediate image of the mask pattern is formed.
  • the light from the intermediate image formed via the first reflective optical system Gl is successively reflected by the convex reflecting surface of the fifth reflecting mirror M5 and the concave reflecting surface of the sixth reflecting mirror M6, and then the reduced image (secondary image) of the mask pattern is formed on the wafer 7.
  • Table 1 described below shows values of items or elements of the reflective imaging optical system according to the first embodiment.
  • ⁇ represents the wavelength of the exposure light
  • ⁇ represents the magnitude of the imaging magnification
  • NA represents the numerical aperture on the image side (wafer side)
  • YO represents the radius (maximum image height) of the image circle IF on the wafer 7
  • LX represents the size or dimension in the X direction of the effective imaging area ER
  • LY represents the size or dimension in the Y direction of the effective imaging area ER (widthwise dimension of the circular arc-shaped
  • the surface number represents the sequence or order of the reflecting surface as counted from the mask side in the direction in which the light travels from the mask surface as the object plane (pattern surface of the mask 4) to the wafer surface as the image plane (transfer surface of the wafer 7), r represents the apex radius of curvature of each of the reflecting surfaces (center radius of curvature: mm), and d represents the spacing distance on the axis of each of the reflecting surfaces, i.e., the inter-surface spacing (mm) .
  • the sign of the inter-surface spacing d is changed every time when the reflection occurs.
  • the radius of curvature of the convex surface is positive, and the radius of curvature of the concave surface is negative, irrelevant to the direction of the incidence of the light.
  • PD represents the distance (incident pupil distance) along the optical axis between the incident pupil and the mask surface, TT
  • Ci2 2.011 x 10
  • Ci4 -4.616 x 10
  • the value of RMS (root mean square: quadratic square mean) of the wavefront aberration was determined for the respective points in the circular arc-shaped effective imaging area ER.
  • the maximum angle of incidence into each of the reflecting mirrors is not more than 25 degrees.
  • the light amount loss which is caused by the reflection in the reflective imaging optical system, can be suppressed to be small.
  • the spacing distance of not less than 8 mm is secured between each of the reflecting mirrors and the light flux allowed to pass along the vicinity thereof, although the maximum angle of incidence into each of the reflecting mirrors is suppressed to be small.
  • Fig. 5 shows a construction of a reflective imaging optical system according to a second embodiment of the embodiment of the present invention.
  • the light from the mask 4 is also successively reflected by the concave reflecting surface of the first reflecting mirror Ml, the convex reflecting surface of the second reflecting mirror M2, the convex reflecting surface of the third reflecting mirror M3, and the concave
  • Ci2 -9.418 x 10 "3 Cl4 -2.485 x 10 "
  • Ci6 2.320 x 10 "45 Cl8 0
  • Ci6 -7.330 x 10
  • Ci4 2.536 x 10
  • the ratio PD/TT of the incident pupil distance PD with respect to the total length TT of the reflective imaging optical system is slightly smaller than that of the first embodiment. Therefore, the maximum angle of incidence into each of the reflecting mirrors is slightly larger than that of the first
  • the maximum angle of incidence into each of the reflecting mirrors is not more than 26.7 degrees.
  • the reflectance is relatively high in relation to the multilayer film constructing the reflecting surface of each of the reflecting mirrors.
  • the spacing distance of not less than 8 mm is secured between each of the reflecting mirrors and the light flux allowed to pass along the vicinity thereof, in the same manner as in the first embodiment.
  • Fig. 6 shows a construction of a reflective imaging optical system according to a third embodiment of the embodiment of the present invention.
  • the light from the mask 4 is also successively reflected by the concave reflecting surface of the first reflecting mirror Ml, the convex reflecting surface of the second reflecting mirror M2, the convex reflecting surface of the third reflecting mirror M3, and the concave
  • Ci2 -5.553 x 10 " 1.396 x 10 "
  • Ci6 -1.524 x 10 " Cl8 0
  • Ci2 -4.598 x 10 3.940 x 10
  • Ci6 -1.320 x 10 Cl8 0
  • the ratio PD/TT of the incident pupil distance PD with respect to the total length TT of the reflective imaging optical system is further decreased as compared with the second embodiment.
  • wavefront aberration is larger than those of the first and second embodiments, on account of the relationship of trade-off between the restriction or limitation of the maximum angle of incidence into each of the reflecting mirrors and the light flux separation from each of the reflecting mirrors.
  • the third embodiment it is possible to secure the relatively large numerical aperture on the image side of 0.35, and it is possible to secure the circular arc-shaped effective imaging area of 26 mm x 1.5 mm in which the various aberrations are
  • Fig. 7 shows a construction of a reflective imaging optical system according to a fourth embodiment of the embodiment of the present invention.
  • the light from the mask 4 is also successively reflected by the concave reflecting surface of the first reflecting mirror Ml, the convex reflecting surface of the second reflecting mirror M2, the convex reflecting surface of the third reflecting mirror M3, and the concave reflecting surface of the fourth reflecting mirror M4, an then the intermediate image of the mask pattern is formed in the fourth embodiment in the same manner as in the fir to third embodiments.
  • Ci2 -5.805 x 10 ⁇ 33
  • Ci4 1.079 x 10 ⁇ 3
  • the ratio PD/TT of the incident pupil distance PD with respect to the total length TT of the reflective imaging optical system is larger than that of the first embodiment.
  • the maximum value of RMS of the wavefront aberration is smaller than that of the first embodiment. That is, also in the fourth embodiment, it is possible to secure the relatively large numerical aperture on the image side of 0.35, and it is possible to secure the circular arc-shaped effective imaging area of 26 mm x 1.5 mm in which the various aberrations are satisfactorily corrected on the wafer 7.
  • Fig. 8 shows a construction of a reflective imaging optical system according to a fifth embodiment of the embodiment of the present invention.
  • the light from the mask 4 is successively reflected by the concave reflecting surface of the first reflecting mirror Ml, the concave reflecting surface of the second reflecting mirror M2, the convex reflecting surface of the third reflecting mirror M3, and the concave reflecting surface of the fourth reflecting mirror M , and then the intermediate image of the mask pattern is formed in the fifth embodiment unlike the first to fourth embodiments.
  • the light from the intermediate image formed via the first reflective optical system Gl is successively reflected by the convex reflecting surface of the fifth reflecting mirror 5 and the concave reflecting surface of the sixth reflecting mirror M6, and then the reduced image of the mask pattern is formed on the wafer 7 .
  • Table 5 described below shows values of items or elements of the reflective imaging optical system according to the fifth embodiment.
  • the ratio PD/TT of the incident pupil distance PD with respect to the total length TT of the reflective imaging optical system is larger than that of the fourth
  • the maximum value of RMS of the wavefront aberration is suppressed to be relatively small. Further, it is expected that the overlay error of the illumination fields can be suppressed to be small in the illumination optical system to be combined with the
  • Fig. 9 shows a construction of a reflective imaging optical system according to a sixth embodiment of the embodiment of the present invention.
  • the light from the mask 4 is successively reflected by the concave reflecting surface of the first reflecting mirror Ml, the convex reflecting surface of the second reflecting mirror M2, the convex reflecting surface of the third reflecting mirror M3, and the concave reflecting surface of the fourth reflecting mirror M4 , and then the intermediate image of the mask pattern is formed in the sixth embodiment in the same manner as in the first to fourth embodiments.
  • the light from the intermediate image formed via the first reflective optical system Gl is successively reflected by the convex reflecting surface of the fifth reflecting mirror M5 and the concave reflecting surface of the sixth reflecting mirror M6, and then the reduced image of the mask pattern is formed on the wafer 7.
  • Table 6 described below shows values of items or elements of the reflective imaging optical system according to the sixth embodiment.
  • Ci6 2.510 x lO "3"
  • the ratio PD/TT of the incident pupil distance PD with respect to the total length TT of the reflective imaging optical system is larger than that of the fifth embodiment Therefore, the maximum value of RMS of the wavefront aberration is suppressed to be small as compared with the fifth embodiment. Further, it is expected that the overla error of the illumination fields can be suppressed to be small in the illumination optical system to be combined with the reflective imaging optical system of this embodiment.
  • the sixth embodiment it is possible to secure the relatively large numerical aperture on the imag side of 0.25, and it is possible to secure the circular arc-shaped effective imaging area of 26 mm x 1.0 mm in which the various aberrations are satisfactorily corrected on the wafer 7.
  • Fig. 10 shows a construction of a reflective imaging optical system according to a seventh embodiment of the embodiment of the present invention. With reference to Fig. 10, the light from the mask 4 is successively
  • Ci2 -4.299 x 10 -33
  • Ci4 5.447 x 10 -39
  • the maximum value of RMS of the wavefront aberration is suppressed to be extremely small. It is possible to secure the relatively large numerical aperture on the image side of 0.3, and it is possible to secure the circular arc- shaped effective imaging area of 26 mm x 2.0 mm in which the various aberrations are satisfactorily corrected on the wafer 7.
  • FIG. 11 shows a construction of a reflective imaging optical system according to an eighth embodiment of the embodiment of the present invention. With reference to Fig. 11, the light from the mask 4 is successively
  • the light from the intermediate image formed via the first reflective optical system Gl is successively reflected by the convex reflecting surface of the fifth reflecting mirror M5 and the concave reflecting surface of the sixth reflecting mirror M6, and then the reduced image of the mask pattern is formed on the wafer 7.
  • Table 8 described below shows values of items or elements of the reflective imaging optical system according to the eighth embodiment .
  • Ci2 -4.210 x 10 "3 Ci 4.899 x 10 "
  • Ci6 1.130 x 10 Cl8 0
  • the maximum value of RMS of the wavefront aberration is suppressed to be small. It is possible to secure the relatively large numerical aperture on the image side of 0.32, and it is possible to secure the circular arc-shaped effective imaging area of 26 mm x 2.0 mm in which the various aberrations are satisfactorily corrected on the wafer 7.
  • the pattern of the mask 4 can be transferred at the high resolution of not more than 0.1 by the scanning exposure to each of the exposure areas having the size of, for example, 26 mm x 34 mm or 26 mm x 37 mm on the wafer 7.
  • the EUV light having the wavelength of 13.5 nm is used by way of example.
  • the present invention is also applicable similarly or equivalently to a reflective imaging optical system which uses, for example, the EUV light having a wavelength of about 5 to 40 nm or any other light having an
  • the respective specified embodiments described above have such common features that the total length TT is 2000 mm, the angle of incidence R is -0.105 rad, the magnitude of the imaging magnification ⁇ is 1/4, and the number of the reflecting mirrors is six.
  • the respective specified embodiments described above are examples of the embodiment which can be carried out within the scope of the present invention. It goes without saying that the total length TT, the angle of incidence R, the imaging magnification ⁇ , the number of the reflecting mirrors, etc. are not limited to the numerical values referred to in the respective specified embodiments.
  • the reflective imaging optical system 6 includes the six reflecting mirrors Ml to M6 wherein the centers of curvature of the reflecting surfaces are arranged on the same axis (on the optical axis AX) .
  • at least one of the six reflecting mirrors Ml to M6 may be provided such that the center of curvature of the reflecting surface is deviated or shifted from the optical axis AX.
  • all of the reflecting mirrors Ml to M6 have the reflecting
  • At least one of the reflecting mirrors Ml to M6 may have a reflecting surface which is formed along a surface rotationally symmetrical a finite number of times (for example, once, twice, three times).
  • the various subsystems including the respective constitutive elements as defined in claims so that the predetermined mechanical accuracy, electric accuracy and optical accuracy are maintained.
  • those performed before and after the assembling include the adjustment for achieving the optical accuracy for the various optical systems, the adjustment for achieving the mechanical accuracy for the various mechanical systems, and the adjustment for achieving the electric accuracy for the various electric systems.
  • the steps of assembling the various subsystems into the exposure apparatus include, for example, the mechanical connection, the wiring connection of the electric circuits, and the piping connection of the air pressure circuits in correlation with the various subsystems. It goes without saying that the steps of assembling the respective individual subsystems are
  • the exposure apparatus are completed, the overall adjustment is performed to secure the various accuracies as the entire exposure apparatus.
  • the exposure apparatus may be produced in a clean room in which the temperature, the cleanness, etc. are managed.
  • Fig. 12 shows a flow chart illustrating steps of producing a semiconductor device. As shown in Fig. 12, in the steps of producing the semiconductor device, a metal film is vapor-deposited on a wafer W which is to serve as a substrate of the semiconductor device.
  • Step S40 a semiconductor device
  • Step S42 a photoresist as a photosensitive material is coated on the vapor-deposited metal film
  • Step S42 a photoresist as a photosensitive material is coated on the vapor-deposited metal film
  • Step S44 exposure step
  • the wafer W for which the transfer has been completed is developed, i.e., the photoresist, to which the pattern has been transferred, is developed (Step S46: development step) .
  • the resist pattern which is formed on the surface of the wafer W in accordance with Step S46, is used as a mask to perform the processing including, for example, the etching with respect to the surface of the wafer W (Step S48: processing step).
  • the resist pattern herein refers to the
  • Step S48 the surface of the wafer W is
  • the processing which is performed in Step S48, includes, for example, at least one of the etching of the surface of the wafer W and the film formation of a metal film or the like.
  • the exposure apparatus of the embodiment described above transfers the pattern by using, as the photosensitive substrate, the wafer W coated with the photoresist.
  • the laser plasma X-ray light source is used as the light source for supplying the EUV light.
  • the synchrotron radiation (SOR) light is used as the EUV light.
  • the present invention is applied to the exposure apparatus having the light source for supplying the EUV light.
  • the present invention is also applicable to an exposure apparatus having a light source for supplying a light having any wavelength other than the EUV light.
  • variable pattern-forming apparatus for dynamically forming a predetermined pattern based on predetermined electronic data, instead of using the mask . It is possible to use, as such a variable pattern-forming
  • D D digital micromirror device
  • the exposure apparatus which uses DMD, is disclosed, for example, in United States Patent Application Publication Nos. 2007/0296936 and 2009/0122381.
  • the present invention is applied to the reflective imaging optical system of the far pupil type provided as the projection optical system of the exposure apparatus.
  • the present invention is also applicable similarly or equivalently to any reflective imaging optical system of the near pupil type in which an image of a first plane is formed on a second plane.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)

Abstract

L'invention porte sur un système optique d'imagerie (6) du type à pupille éloignée, qui est applicable à un appareil d'exposition, ledit système comportant six miroirs réfléchissants (M1 à M6) et formant une image d'un premier plan (4) sur un second plan (7). Une pupille d'incidence du système optique d'imagerie est positionnée sur un côté opposé au système optique d'imagerie, avec le premier plan interposé entre eux. Une condition -14,3 < (PD/TT)/R < -8,3 est satisfaite par une distance PD qui est prévue, le long d'un axe optique (AX), entre la pupille d'incidence et le premier plan, une distance TT qui est prévue, le long de l'axe optique, entre le premier plan et le second plan et un angle d'incidence R (rad) d'un faisceau lumineux principal qui entre dans le premier plan.
PCT/JP2010/070751 2009-11-17 2010-11-16 Système optique d'imagerie par réflexion, appareil d'exposition et procédé de production de dispositif WO2011062283A1 (fr)

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DE102010040811A1 (de) * 2010-09-15 2012-03-15 Carl Zeiss Smt Gmbh Abbildende Optik
KR102330570B1 (ko) 2012-02-06 2021-11-25 가부시키가이샤 니콘 반사 결상 광학계, 노광 장치, 및 디바이스 제조 방법
JP6635904B2 (ja) * 2016-10-14 2020-01-29 キヤノン株式会社 投影光学系、露光装置及び物品の製造方法

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JP2011109096A (ja) 2011-06-02
KR20120100996A (ko) 2012-09-12
US8743342B2 (en) 2014-06-03
KR20170060172A (ko) 2017-05-31
US20110116062A1 (en) 2011-05-19

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