WO2011045287A1 - Device comprising electrical contacts and its production process - Google Patents

Device comprising electrical contacts and its production process Download PDF

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Publication number
WO2011045287A1
WO2011045287A1 PCT/EP2010/065225 EP2010065225W WO2011045287A1 WO 2011045287 A1 WO2011045287 A1 WO 2011045287A1 EP 2010065225 W EP2010065225 W EP 2010065225W WO 2011045287 A1 WO2011045287 A1 WO 2011045287A1
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WO
WIPO (PCT)
Prior art keywords
conductive
insulating layer
electrically insulating
seeds
anyone
Prior art date
Application number
PCT/EP2010/065225
Other languages
French (fr)
Inventor
Christophe Ballif
Original Assignee
Ecole Polytechnique Federale De Lausanne (Epfl)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique Federale De Lausanne (Epfl) filed Critical Ecole Polytechnique Federale De Lausanne (Epfl)
Priority to ES10763706.8T priority Critical patent/ES2496186T3/en
Priority to CN201080046306.0A priority patent/CN102668105B/en
Priority to JP2012533602A priority patent/JP5624623B2/en
Priority to EP10763706.8A priority patent/EP2489076B1/en
Priority to US13/501,177 priority patent/US9437753B2/en
Publication of WO2011045287A1 publication Critical patent/WO2011045287A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a device comprising a conductive surface and electrical contacts by which an electric current is able to be passed.
  • the invention refers also to a method for producing such device. It finds in particular advantageous application for the solar cell electrical contacts fabrication.
  • Photovoltaic solar cells have to extract high current densities, in the range of 10 to 50 mA cm 2 of current per unit area perpendicular to the solar illumination.
  • a conductive front layer 1 such as a highly doped region of silicon, a thin transparent metallic layer, or a transparent conductive oxide such as SnO2, ITO, ZnO, lnO:H (Indium oxide) or a combination of those.
  • a conductive front layer 1 such as a highly doped region of silicon, a thin transparent metallic layer, or a transparent conductive oxide such as SnO2, ITO, ZnO, lnO:H (Indium oxide) or a combination of those.
  • a conductive front layer 1 such as a highly doped region of silicon, a thin transparent metallic layer, or a transparent conductive oxide such as SnO2, ITO, ZnO, lnO:H (Indium oxide) or a combination of those.
  • Eventually the current is collected by more conductive contact lines called fingers or grid
  • Busbars 3 are usually contacted (soldered, welded or contacted with electrical glue) with a highly conductive metal string to extract the current that is generated homogeneously over the optically active area (i.e. not covered by the contact grid) and collected by the thin fingers or grid contact 2.
  • These grid contacts are often deposited using the screen- printing of conductive paste, such as silver containing paste.
  • the screen-printed contacts are realized only by screen-printing or related techniques (e.g. stencil printing), using a single or a double print, they tend to be wide (70-120 ⁇ ), thereby shadowing the solar cells and creating optical losses, as typically 4-1 1 % of the surface of the solar cell is then covered by a reflective material (meaning area where no photon can be collected).
  • a reflective material meaning area where no photon can be collected.
  • the bulk electrical resistivity of the screen-printed paste typically Ag flakes with inorganic and organic components
  • the resistivity for a paste which is cured at high temperature is a factor 2-3 higher than the one of bulk Ag, and 7-10 higher in the case of pastes cured at low temperature (150- 300°).
  • This low conductivity can lead to strong electrical losses in the contact fingers of the photovoltaic solar cell.
  • thick fingers In order to compensate for the low conductivity, thick fingers have to be printed (typically several tens of micrometers). The disadvantage is that it can still be insufficient and still produces electrical losses, and, in addition, there is the need to use large quantity of screen-printed paste, which can be an expensive component.
  • both the seed-line or grid contact 4, and the underlying layer 1 are conductive.
  • the materials 5 deposited by plating will tend to also deposit on both the seed-line 4 and the underlying layer 1 , or at least partially on the underlying layer 1. This will then lead to undesired metal coverage of the cell front surface, leading to optical losses.
  • One object of the present invention is to provide a device, such as a solar cell, which allows to avoid the disadvantages of the prior art. More specially, one object of the invention is to provide a device comprising a conductive surface and electrical contacts, said electrical contacts having a reduced size and an increased conductivity.
  • the present invention relates to a device comprising a conductive surface and electrical contacts by which an electric current is able to be passed.
  • said electrical contacts comprise conductive seeds deposited on the conductive surface, an electrically insulating layer, which covers discontinuously said conductive seeds in order to form openings leaving access to said conductive seeds, and a plating layer recovering said discontinuous insulating layer and deposited on conductive seeds which are accessible through said openings and form points from which the deposit of said plating layer can start.
  • the rest of the conductive surface which doesn't comprise any electrical contacts, is continuously covered by said electrically insulating layer.
  • the conductive seeds contain silver.
  • the electrically insulating layer may be optically transparent.
  • the electrically insulating layer may comprise one layer or a stack of layers made of materials selected from the group consisting of MgF and other optically transparent Fluor compounds, SiN x , S1O2, T1O2, AI2O3, ZnS, and SiOxNy.
  • An undoped transparent conductive oxide based on ZnO, SnO2, or InO can also be used.
  • the plating layer may be made of a material selected from the group consisting of Ag and Cu.
  • the electrical contacts form a pattern designed for current collection, such as a grid.
  • the device of the invention is a solar cell, more particularly a silicon heteroju notion solar cell.
  • the present invention relates also to a method for producing a device as defined above, and comprising the steps of:
  • the conductive seeds may be formed by depositing a conductive paste having the appropriate roughness and porosity allowing the growth of the plating layer.
  • the paste may be deposited by a method selected from the group consisting of screen-printing, stencil printing, aerosol, syringe and inkjet printing, to form a pattern suitable for current collection from the device, such as a grid.
  • the present invention relates also to the use of the method defined above for producing a solar cell, and more particularly a silicon heteroju notion solar cell comprising for example electrical contacts forming a metal pattern on its front side.
  • Figures 1 and 2 are schematic cross-section views of solar cells of the prior art
  • FIG. 3 is a schematic cross-section view of a solar cell of the invention.
  • Figures 4a, 4b, 4c represent the different steps of the method of the invention
  • Figures 5 and 6 are schematic top views of a solar cell of the prior art and a solar cell of the invention, respectively.
  • a device of the invention such as a solar cell 10
  • a conductive surface 12 and electrical contacts 14 by which an electric current is able to be passed.
  • each electrical contact 14 comprises:
  • plating layer 22 recovering said discontinuous insulating layer 18 and deposited on conductive seeds 16 which are accessible through said openings 20 and form points A from which the deposit of said plating layer 22 can start.
  • the device comprises a discontinuous electrically insulating layer integrated into each electrical contact.
  • Such device is a conductive device since the electrical contact, comprising electrically insulating parts, comprises also conductive seeds and a plating layer linking said electrically insulating parts but also said conductive seeds, and consequently the conductive surface, since the conductive seeds are deposited on said conductive surface.
  • the contact lines form a grid. It is obvious that the grid can be replaced with any appropriate pattern, suitable for current collection from the solar cell.
  • the lateral dimension of the fingers is 10-50 ⁇ .
  • a conductive paste is used. This conductive paste contains typically silver flakes or nanoparticles or silver containing particles. Such paste has sufficient roughness and porosity, such as typically obtained by screen-printing, or inkjet printing or dispensing of pastes containing micro- and nano-particles.
  • This seed-layer can be thin, only a few micrometer, and constitute the conductive seeds 16 for the grid contacts.
  • the plating process takes place. Thanks to the electrically insulating layer 18 covering the "optically active areas" 24, and thanks to the remaining openings 20 in the conductive seeds or grid contacts 16 not covered by the insulating layer 18, the plating can start only on the grid contacts, as no plating will occur where there is an insulating layer, because it requires an electrical current to flow, especially in the case of electroplating.
  • the selectivity of the plating process is optimum and the electrical conductivity of the grid contacts can be enhanced by the plating, as shown in Fig.4c.
  • the grid contact finger can then be thickened by several micrometers or tens of micrometers of highly conductive material.
  • a device is obtained, which comprises electrical contacts 14 which have a reduced size and an increased conductivity compared to the known metal grid pattern.
  • Figure 6 shows that the electrical contacts 14 are not as wide as the typical electrical contacts 2 shown by Figure 5.
  • the choice of the insulating layer 18 is important. It should be thick enough in order to have no pinholes or discontinuity when deposited on the optically active area of the device, or at least sufficiently compact to prevent deposition of metal.
  • the insulating layer 18 does not need to be optically transparent.
  • the invention can also be used advantageously for the backside of solar cells or for solar cells where the front metallization pattern is brought to back of the solar cells using holes in the wafers such as in metallization wrap through cells and both electrical contacts are then at the backside of the cell.
  • the invention allows the strengthening of electrical contacts of any shapes on any conductive surface (including metallic), providing the rough seed-layer is present and the application technique for deposited the rough seed-layer is well chosen.
  • the present invention is particularly interesting when it applies to so-called silicon heteroju notion solar cell, using a thin (2-10 nm) intrinsic amorphous Si layers between the crystalline wafer end the doped layers.
  • Such cells are covered by a transparent conductive oxide, as ITO, ZnO or SnO2, or indium oxide doped with H, at the front and sometimes at the back.
  • a transparent conductive oxide as ITO, ZnO or SnO2
  • ITO indium oxide doped with H
  • the process of the invention applies particularly well, as no " high-temperature" metallization paste can be applied.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to a device comprising a conductive surface (12) and electrical contacts (14) by which an electric current is able to be passed. Said electrical contacts (14) comprise conductive seeds (16) deposited on the conductive surface (12), an electrically insulating layer (18), which covers discontinuously said conductive seeds (16)in order to form openings leaving access to said conductive seeds (16), and a plating layer (22) recovering said discontinuous insulating layer (18) and deposited on conductive seeds (16) which are accessible through said openings and form points from which the deposit of said plating layer (22) can start. The rest of the conductive surface (12), which doesn't comprise any electrical contacts (14), is continuously covered by said electrically insulating layer (18).

Description

Description
DEVICE COMPRISING ELECTRICAL CONTACTS AND ITS PRODUCTION
PROCESS
Technical Field
[0001] The invention relates to a device comprising a conductive surface and electrical contacts by which an electric current is able to be passed. The invention refers also to a method for producing such device. It finds in particular advantageous application for the solar cell electrical contacts fabrication.
Background of the invention
[0002] Photovoltaic solar cells have to extract high current densities, in the range of 10 to 50 mA cm2 of current per unit area perpendicular to the solar illumination. Such a device is illustrated in Figure 1 in a cross-sectional view. The generated photocurrent is usually collected and transported laterally through a conductive front layer 1 , such as a highly doped region of silicon, a thin transparent metallic layer, or a transparent conductive oxide such as SnO2, ITO, ZnO, lnO:H (Indium oxide) or a combination of those. Eventually the current is collected by more conductive contact lines called fingers or grid contacts 2. Figure 5 shows a typical metal grid pattern placed on a front side of a photovoltaic solar cell. Busbars 3 are usually contacted (soldered, welded or contacted with electrical glue) with a highly conductive metal string to extract the current that is generated homogeneously over the optically active area (i.e. not covered by the contact grid) and collected by the thin fingers or grid contact 2. These grid contacts are often deposited using the screen- printing of conductive paste, such as silver containing paste.
[0003] If the screen-printed contacts are realized only by screen-printing or related techniques (e.g. stencil printing), using a single or a double print, they tend to be wide (70-120 μηη), thereby shadowing the solar cells and creating optical losses, as typically 4-1 1 % of the surface of the solar cell is then covered by a reflective material (meaning area where no photon can be collected). Also the bulk electrical resistivity of the screen-printed paste (typically Ag flakes with inorganic and organic components) is significantly higher than the one of the corresponding bulk material. In the case of Ag, the resistivity for a paste which is cured at high temperature (700-900°) is a factor 2-3 higher than the one of bulk Ag, and 7-10 higher in the case of pastes cured at low temperature (150- 300°). This low conductivity can lead to strong electrical losses in the contact fingers of the photovoltaic solar cell. In order to compensate for the low conductivity, thick fingers have to be printed (typically several tens of micrometers). The disadvantage is that it can still be insufficient and still produces electrical losses, and, in addition, there is the need to use large quantity of screen-printed paste, which can be an expensive component.
[0004] As shown by Figure 2, one possibility to limit both the optical losses, the electrical losses and to save material, would be to deposit on the conductive front layer 1 , by screen-printing or another technique, a thinner seed-line 4, and subsequently to reinforce the electrical contact by a plating process (electroless plating, or electroplating), typically using Ag, Cu, Ni and other layers for plating the contacts. The advantage of plated material 5 is a higher conductivity, closer to the bulk conductivity of the used materials.
[0005] The problem is that, in the proposed configuration, both the seed-line or grid contact 4, and the underlying layer 1 are conductive. Hence the materials 5 deposited by plating will tend to also deposit on both the seed-line 4 and the underlying layer 1 , or at least partially on the underlying layer 1. This will then lead to undesired metal coverage of the cell front surface, leading to optical losses. It is possible to work by varying the composition of the plating solutions to achieve a " selectivity" between the finger contacts 4 and the underlying layer 1 , but it will also be difficult to warrant a robust process in any production, because in principle all conductive layers will be able to give or accept the electrons needed in the plating process (and furthermore with electroplating).
[0006] One object of the present invention is to provide a device, such as a solar cell, which allows to avoid the disadvantages of the prior art. More specially, one object of the invention is to provide a device comprising a conductive surface and electrical contacts, said electrical contacts having a reduced size and an increased conductivity.
Summary of the invention
[0007] The present invention relates to a device comprising a conductive surface and electrical contacts by which an electric current is able to be passed. According to the invention, said electrical contacts comprise conductive seeds deposited on the conductive surface, an electrically insulating layer, which covers discontinuously said conductive seeds in order to form openings leaving access to said conductive seeds, and a plating layer recovering said discontinuous insulating layer and deposited on conductive seeds which are accessible through said openings and form points from which the deposit of said plating layer can start. Moreover, the rest of the conductive surface, which doesn't comprise any electrical contacts, is continuously covered by said electrically insulating layer.
[0008] Preferably, the conductive seeds contain silver.
[0009] In some embodiments, the electrically insulating layer may be optically transparent.
[0010] Advantageously, the electrically insulating layer may comprise one layer or a stack of layers made of materials selected from the group consisting of MgF and other optically transparent Fluor compounds, SiNx, S1O2, T1O2, AI2O3, ZnS, and SiOxNy. An undoped transparent conductive oxide based on ZnO, SnO2, or InO can also be used.
[001 1] Preferably, the plating layer may be made of a material selected from the group consisting of Ag and Cu.
[0012] According to a preferred embodiment, the electrical contacts form a pattern designed for current collection, such as a grid.
[0013] Advantageously, the device of the invention is a solar cell, more particularly a silicon heteroju notion solar cell.
[0014] The present invention relates also to a method for producing a device as defined above, and comprising the steps of:
- providing a conductive surface, - depositing, on said conductive surface, conductive seeds in places corresponding to the positions of the electrical contacts,
- depositing an electrically insulating layer on the full conductive surface in order to form a discontinuous electrically insulating layer in the region of the conductive seeds and to provide, in said discontinuous insulating layer, openings leaving access to said conductive seeds and in order to form a continuous electrically insulating layer on the rest of the conductive surface,
- recovering the discontinuous electrically insulating layer and conductive seeds which are accessible through said openings with a plating layer, said plating layer starting to grow from said conductive seeds accessible through said openings, such conductive seeds forming points to start the deposit of the said plating layer.
[0015] Advantageously, the conductive seeds may be formed by depositing a conductive paste having the appropriate roughness and porosity allowing the growth of the plating layer.
[0016] Preferably, the paste may be deposited by a method selected from the group consisting of screen-printing, stencil printing, aerosol, syringe and inkjet printing, to form a pattern suitable for current collection from the device, such as a grid.
[0017] The present invention relates also to the use of the method defined above for producing a solar cell, and more particularly a silicon heteroju notion solar cell comprising for example electrical contacts forming a metal pattern on its front side.
Brief description of the drawings
[0018] Figures 1 and 2 are schematic cross-section views of solar cells of the prior art,
[0019] Figure 3 is a schematic cross-section view of a solar cell of the invention,
[0020] Figures 4a, 4b, 4c represent the different steps of the method of the invention, and [0021] Figures 5 and 6 are schematic top views of a solar cell of the prior art and a solar cell of the invention, respectively.
Detailed description
[0022] As shown by Figures 3 and 4a to 4c, a device of the invention, such as a solar cell 10, comprises a conductive surface 12 and electrical contacts 14 by which an electric current is able to be passed. According to the invention, each electrical contact 14 comprises:
- conductive seeds 16 deposited on the conductive surface 12,
- an electrically insulating layer 18, which covers discontinuously said conductive seeds 16 in order to form openings 20 leaving access to said conductive seeds 16, and
- a plating layer 22 recovering said discontinuous insulating layer 18 and deposited on conductive seeds 16 which are accessible through said openings 20 and form points A from which the deposit of said plating layer 22 can start.
[0023] Moreover, the rest of the conductive surface 12, which doesn't comprise the electrical contacts 14, is continuously covered by said electrically insulating layer 18.
[0024] According to the invention, the device comprises a discontinuous electrically insulating layer integrated into each electrical contact. Such device is a conductive device since the electrical contact, comprising electrically insulating parts, comprises also conductive seeds and a plating layer linking said electrically insulating parts but also said conductive seeds, and consequently the conductive surface, since the conductive seeds are deposited on said conductive surface.
[0025] According to the method of the invention, first are deposited fine contact lines of conductive seeds 16, called fingers or grid contacts. In this example, the contact lines form a grid. It is obvious that the grid can be replaced with any appropriate pattern, suitable for current collection from the solar cell. The lateral dimension of the fingers is 10-50 μηη. To obtain the conductive seeds 16, a conductive paste is used. This conductive paste contains typically silver flakes or nanoparticles or silver containing particles. Such paste has sufficient roughness and porosity, such as typically obtained by screen-printing, or inkjet printing or dispensing of pastes containing micro- and nano-particles. This seed-layer can be thin, only a few micrometer, and constitute the conductive seeds 16 for the grid contacts.
[0026] Then an electrically insulating (insulating with respect to the underlying conductive front layer 18, i.e. with at least a resistivity of a factor 100 higher) and optically transparent layer in the absorption range of the solar cells (typical absorption below 1 -5% in the range of interest), such as MgF, SiNx, S1O2, SiOxNy, T1O2, ZnS or AI2O3 or a multi-stack layer of these materials is deposited on the full front side of the device, by any techniques such as sputtering, evaporation, chemical vapor deposition, plasma enhanced chemical vapor deposition. As shown by Figure 4b, the deposition is such that parts of the conductive seeds 16 are not fully covered, i.e. the deposited layer 18 is discontinued on the conductive seeds or the fine-line grid contacts 16 in order to form openings 20 leaving access to the conductive seeds 16. However, the other "optically active areas" 24 of the cells are covered by the electrical insulating layer 18.
[0027] In the last step, the plating process takes place. Thanks to the electrically insulating layer 18 covering the "optically active areas" 24, and thanks to the remaining openings 20 in the conductive seeds or grid contacts 16 not covered by the insulating layer 18, the plating can start only on the grid contacts, as no plating will occur where there is an insulating layer, because it requires an electrical current to flow, especially in the case of electroplating. The selectivity of the plating process is optimum and the electrical conductivity of the grid contacts can be enhanced by the plating, as shown in Fig.4c. The grid contact finger can then be thickened by several micrometers or tens of micrometers of highly conductive material. At the end of the process, a device is obtained, which comprises electrical contacts 14 which have a reduced size and an increased conductivity compared to the known metal grid pattern. Figure 6 shows that the electrical contacts 14 are not as wide as the typical electrical contacts 2 shown by Figure 5.
[0028] The choice of the insulating layer 18 is important. It should be thick enough in order to have no pinholes or discontinuity when deposited on the optically active area of the device, or at least sufficiently compact to prevent deposition of metal.
[0029] If the device that has to be metalized with thin highly conductive lines does not need to capture light, then the insulating layer 18 does not need to be optically transparent.
[0030] The invention can also be used advantageously for the backside of solar cells or for solar cells where the front metallization pattern is brought to back of the solar cells using holes in the wafers such as in metallization wrap through cells and both electrical contacts are then at the backside of the cell.
[0031] More generally, the invention allows the strengthening of electrical contacts of any shapes on any conductive surface (including metallic), providing the rough seed-layer is present and the application technique for deposited the rough seed-layer is well chosen.
[0032] Moreover, by choosing the deposited layers with the proper refractive index, between 1.3 and 2.4, or a multi-stack of such materials, depending on the refractive index of the material covering the cell in a module (typically a polymer based encapsulant) and of the conductive front layers and underlying layers, it is possible to achieve an additional anti-reflection effect of the solar cells, which can lead to an additional current gain of several percent.
[0033] The present invention is particularly interesting when it applies to so-called silicon heteroju notion solar cell, using a thin (2-10 nm) intrinsic amorphous Si layers between the crystalline wafer end the doped layers. Such cells are covered by a transparent conductive oxide, as ITO, ZnO or SnO2, or indium oxide doped with H, at the front and sometimes at the back. As the cell is fabricated at around 200°C, it cannot withstand high annealing temperature above 270-300°C. In this case, the process of the invention applies particularly well, as no " high-temperature" metallization paste can be applied.

Claims

Claims
1. Device comprising a conductive surface (12) and electrical contacts (14) by which an electric current is able to be passed, characterized in that said electrical contacts (14) comprise conductive seeds (16) deposited on the conductive surface (12), an electrically insulating layer (18), which covers discontinuously said conductive seeds (16) in order to form openings (20) leaving access to said conductive seeds (16), and a plating layer (22) recovering said discontinuous insulating layer (18) and deposited on conductive seeds (16) which are accessible through said openings (20) and form points from which the deposit of said plating layer (22) can start, and in that the rest of the conductive surface (12), which doesn't comprise any electrical contacts (14), is continuously covered by said electrically insulating layer (18).
2. Device according to claim 1 , characterized in that the conductive seeds (16) contain silver.
3. Device according to anyone of claims 1 to 2, characterized in that the electrically insulating layer (18) is optically transparent.
4. Device according to anyone of claims 1 to 3, characterized in that the electrically insulating layer (18) comprises one layer or a stack of layers made of materials selected from the group consisting of MgF and other optically transparent Fluor compounds, SiNx, ZnS, ΤΊΟ2, S1O2, SiOxNy and AI2O3.
5. Device according to anyone of claims 1 to 4, characterized in that the plating layer (22) is made of a material selected from the group consisting of Ag and Cu.
6. Device according to anyone of claims 1 to 5, characterized in that the electrical contacts (14) form a pattern designed for current collection.
7. Device according to anyone of claims 1 to 6, characterized in that said device is a solar cell.
8. Device according to claim 7, characterized in that said solar cell is a silicon heteroju notion solar cell.
9. Method for producing a device according to anyone of claims 1 to 8, characterized in that it comprises the steps of:
- providing a conductive surface (12),
- depositing, on said conductive surface (12), conductive seeds (16) in places corresponding to the positions of the electrical contacts (14),
- depositing an electrically insulating layer (18) on the full conductive surface (12) in order to form a discontinuous electrically insulating layer in the region of the conductive seeds (16) and to provide, in said discontinuous insulating layer, openings (20) leaving access to said conductive seeds (16) and in order to form a continuous electrically insulating layer on the rest of the conductive surface (12),
- recovering the discontinuous electrically insulating layer (18) and conductive seeds (16) which are accessible through said openings (20) with a plating layer (22), said plating layer (22) starting to grow from said conductive seeds (16) accessible through said openings (20).
10. Method according to claim 9, characterized in that the conductive seeds (16) are formed by depositing a conductive paste having the appropriate roughness and porosity allowing the growth of the plating layer (22).
1 1. Method according to claim 10, characterized in that the paste is deposited by a method selected from the group consisting of screen-printing, stencil printing, aerosol, syringe and inject printing, to form a pattern suitable for current collection from the device.
12. Method according to anyone of claims 9 to 1 1 , characterized in that the electrically insulating layer (18) comprises one layer or a stack of layers made of materials selected from the group consisting of MgF and other optically transparent Fluor compounds, SiNx, S1O2, ZnS, ΤΊΟ2, SiOxNy and AI2O3.
13. Method according to anyone of claims 9 to 12, characterized in that the electrically insulating layer (18) is optically transparent.
14. Method according to anyone of claims 9 to 13, characterized in that the material of the plating layer (22) is selected from the group consisting of Ag and Cu.
15. Use of the method as defined in claims 9 to 14 for producing a solar cell, and more particularly a silicon heterojunction solar cell.
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EP2312641A1 (en) 2011-04-20
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US20120240998A1 (en) 2012-09-27
JP5624623B2 (en) 2014-11-12
EP2489076B1 (en) 2014-07-02
CN102668105B (en) 2015-07-08
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US9437753B2 (en) 2016-09-06
EP2489076A1 (en) 2012-08-22

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