WO2011041087A3 - Inductively-coupled plasma (icp) resonant source element - Google Patents
Inductively-coupled plasma (icp) resonant source element Download PDFInfo
- Publication number
- WO2011041087A3 WO2011041087A3 PCT/US2010/048573 US2010048573W WO2011041087A3 WO 2011041087 A3 WO2011041087 A3 WO 2011041087A3 US 2010048573 W US2010048573 W US 2010048573W WO 2011041087 A3 WO2011041087 A3 WO 2011041087A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coil
- inductively
- overlapping area
- coupled plasma
- coupled
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
Abstract
The present invention generally relates to an inductive-capacitive element that may be used to form a single coil within an inductively-coupled plasma apparatus. One or more elements may be used and coupled together to collectively form the coil. The coil may be coupled to a single match network. Therefore, a single input and a single output may be used for the coil so that fewer penetrations through the chamber walls may be used. The individual inductive-capacitive elements may comprise two overlapping tubes with an insulating material disposed therebetween in an overlapping area. The overlapping area forms a capacitor segment and the non-overlapping area forms an inductor segment. The tubes and insulating material may be welded together to create a resonant circuit with an impedance of zero. Thus, the inductance of the coil is low, only two wall penetrations are utilized and a single match network is utilized.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24692809P | 2009-09-29 | 2009-09-29 | |
US61/246,928 | 2009-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011041087A2 WO2011041087A2 (en) | 2011-04-07 |
WO2011041087A3 true WO2011041087A3 (en) | 2011-09-29 |
Family
ID=43826839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2010/048573 WO2011041087A2 (en) | 2009-09-29 | 2010-09-13 | Inductively-coupled plasma (icp) resonant source element |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2011041087A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6473332B2 (en) * | 2012-01-27 | 2019-02-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Segmented antenna assembly and plasma generator |
JP6473889B2 (en) * | 2014-09-19 | 2019-02-27 | パナソニックIpマネジメント株式会社 | Plasma processing apparatus and method, and electronic device manufacturing method |
CN105491780B (en) * | 2014-10-01 | 2018-03-30 | 日新电机株式会社 | The antenna of plasma generation and the plasma processing apparatus for possessing the antenna |
JP7025711B2 (en) * | 2018-03-14 | 2022-02-25 | 日新電機株式会社 | Antenna and plasma processing equipment |
JP7101335B2 (en) * | 2018-03-19 | 2022-07-15 | 日新電機株式会社 | Antenna and plasma processing equipment |
JP7233639B2 (en) * | 2019-04-19 | 2023-03-07 | 日新電機株式会社 | Silicon film deposition method |
JP7290080B2 (en) * | 2019-07-19 | 2023-06-13 | 日新電機株式会社 | Plasma processing equipment |
CN117751422A (en) * | 2021-08-20 | 2024-03-22 | 东京毅力科创株式会社 | Apparatus for plasma processing |
JP2024068522A (en) * | 2022-11-08 | 2024-05-20 | 日新電機株式会社 | Plasma Processing Equipment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265031B1 (en) * | 1993-01-12 | 2001-07-24 | Tokyo Electron Limited | Method for plasma processing by shaping an induced electric field |
JP2003109798A (en) * | 2001-09-27 | 2003-04-11 | Ishikawajima Harima Heavy Ind Co Ltd | Discharge device, plasma treatment method and solar cell |
KR20070048480A (en) * | 2005-11-04 | 2007-05-09 | 세메스 주식회사 | Plasma treatment apparatus |
KR20090059884A (en) * | 2007-12-07 | 2009-06-11 | 성균관대학교산학협력단 | Plasma sources having ferrite structures and plasma generating apparatus employing the same |
-
2010
- 2010-09-13 WO PCT/US2010/048573 patent/WO2011041087A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265031B1 (en) * | 1993-01-12 | 2001-07-24 | Tokyo Electron Limited | Method for plasma processing by shaping an induced electric field |
JP2003109798A (en) * | 2001-09-27 | 2003-04-11 | Ishikawajima Harima Heavy Ind Co Ltd | Discharge device, plasma treatment method and solar cell |
KR20070048480A (en) * | 2005-11-04 | 2007-05-09 | 세메스 주식회사 | Plasma treatment apparatus |
KR20090059884A (en) * | 2007-12-07 | 2009-06-11 | 성균관대학교산학협력단 | Plasma sources having ferrite structures and plasma generating apparatus employing the same |
Also Published As
Publication number | Publication date |
---|---|
WO2011041087A2 (en) | 2011-04-07 |
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