WO2011038718A2 - Traitement et production d'un émetteur sélectif de photopiles - Google Patents

Traitement et production d'un émetteur sélectif de photopiles Download PDF

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Publication number
WO2011038718A2
WO2011038718A2 PCT/DE2010/001144 DE2010001144W WO2011038718A2 WO 2011038718 A2 WO2011038718 A2 WO 2011038718A2 DE 2010001144 W DE2010001144 W DE 2010001144W WO 2011038718 A2 WO2011038718 A2 WO 2011038718A2
Authority
WO
WIPO (PCT)
Prior art keywords
emitter
depth
dopant
doping
solar cell
Prior art date
Application number
PCT/DE2010/001144
Other languages
German (de)
English (en)
Other versions
WO2011038718A3 (fr
Inventor
Peter Grabitz
Gerhard Wahl
Original Assignee
Systaic Cells Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Systaic Cells Gmbh filed Critical Systaic Cells Gmbh
Publication of WO2011038718A2 publication Critical patent/WO2011038718A2/fr
Publication of WO2011038718A3 publication Critical patent/WO2011038718A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a solar cell with a doping in particular with a phosphorus emitter according to the preamble of patent claim 1 and a method for the treatment and production of selective emitters according to the preamble of patent claim 6.
  • Dopant phosphorus (boron or aluminum) has.
  • the dopant concentration is set locally targeted.
  • US 20080026550 A1 discloses a method in which, after a flat diffusion (for example, but not necessarily in a tube furnace), a dopant is additionally driven locally at the location of the later contact fingers with a laser.
  • a flat diffusion for example, but not necessarily in a tube furnace
  • EP 1 843 389 B1 a process is described which allows the back etching of an emitter to achieve a better surface performance. It is described the use of an etching solution for the oxidation of a semiconductor substrate, which stops by itself after a defined etching depth until a layer of a certain thickness has been removed from the surface.
  • the object of the invention is therefore to provide a solar cell and a method for the treatment of selective emitters of the solar cell, which produce a more favorable emitter profile and improve the electrical properties.
  • the present method introduces an additional step, which i.a. to etch flat with an emitter structure formed by means of a laser.
  • a layer of about 1 nm (optimally from 10 nm) to 400 nm (better to 150 nm) thickness is etched off.
  • the surface concentration of the phosphorus (or boron or aluminum) in the emitter thus decreases further in the surface for better electrical properties, or the emitter profile becomes cheaper.
  • the laser step ideally goes so far into the depth (400-1200 nm) that the surface concentration of phosphorus (or boron or aluminum) nevertheless remains intact for good contact formation.
  • Fig. 1 shows a silicon wafer in section after the diffusion of phosphorus (prior art).
  • FIG. 2 shows the structure from FIG. 1, with a laser after the actual diffusion additionally driving the dopant remaining in the glass on the surface into the silicon.
  • Fig. 3 shows the full-surface etching back of the silicon surface up to the dashed line.
  • Fig. 1 shows a silicon wafer 1 in section after the diffusion of phosphorus (or boron) in the surface (to the dashed area) according to the prior art. Above that is the
  • FIG. 2 shows the structure of FIG
  • the dopant-containing glass is etched off. This results locally in a region of higher doping 5.
  • FIG. 3 shows how, in a subsequent process step, the entire surface 6 of this structure is etched away by approximately 1 to 400 nm in addition to the normal etching back of the glass.
  • the described method is exemplified in the embodiments for p-type substrates with an n-type phosphorus emitter. However, it is also conceivable for an n-type substrate with boron or aluminum emitter. In the text, reference is made to the p-type substrate and the information for the n-type substrate is given in brackets.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une photopile dont les caractéristiques électriques sont améliorées en ce sens qu'une fois produite une zone à dopage localement plus élevé, la surface de silicium (6) est amincie sur toute sa surface par attaque chimique.
PCT/DE2010/001144 2009-09-30 2010-09-28 Traitement et production d'un émetteur sélectif de photopiles WO2011038718A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009043573.5 2009-09-30
DE102009043573 2009-09-30

Publications (2)

Publication Number Publication Date
WO2011038718A2 true WO2011038718A2 (fr) 2011-04-07
WO2011038718A3 WO2011038718A3 (fr) 2012-01-05

Family

ID=43502825

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2010/001144 WO2011038718A2 (fr) 2009-09-30 2010-09-28 Traitement et production d'un émetteur sélectif de photopiles

Country Status (1)

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WO (1) WO2011038718A2 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080026550A1 (en) 2004-07-26 2008-01-31 Werner Jurgen H Laser doping of solid bodies using a linear-focussed laser beam and production of solar-cell emitters based on said method
EP1843389B1 (fr) 2006-04-04 2008-08-13 SolarWorld Industries Deutschland GmbH Procédé de dopage au moyen de diffusion, oxydation superficielle et rétrogravure ainsi que procédé de fabrication d'une cellule solaire

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080026550A1 (en) 2004-07-26 2008-01-31 Werner Jurgen H Laser doping of solid bodies using a linear-focussed laser beam and production of solar-cell emitters based on said method
EP1843389B1 (fr) 2006-04-04 2008-08-13 SolarWorld Industries Deutschland GmbH Procédé de dopage au moyen de diffusion, oxydation superficielle et rétrogravure ainsi que procédé de fabrication d'une cellule solaire

Also Published As

Publication number Publication date
WO2011038718A3 (fr) 2012-01-05

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