WO2011037317A2 - Apparatus for growing silicon ingots, and body for the vacuum chamber of the apparatus for growing silicon ingots - Google Patents

Apparatus for growing silicon ingots, and body for the vacuum chamber of the apparatus for growing silicon ingots Download PDF

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Publication number
WO2011037317A2
WO2011037317A2 PCT/KR2010/004615 KR2010004615W WO2011037317A2 WO 2011037317 A2 WO2011037317 A2 WO 2011037317A2 KR 2010004615 W KR2010004615 W KR 2010004615W WO 2011037317 A2 WO2011037317 A2 WO 2011037317A2
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WIPO (PCT)
Prior art keywords
vacuum chamber
upper flange
outer container
silicon ingot
container
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PCT/KR2010/004615
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French (fr)
Korean (ko)
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WO2011037317A3 (en
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이종구
Original Assignee
퀄리플로나라테크(주)
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Publication of WO2011037317A2 publication Critical patent/WO2011037317A2/en
Publication of WO2011037317A3 publication Critical patent/WO2011037317A3/en

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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Definitions

  • the present invention relates to a body for a vacuum chamber provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus, which is provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus which can maintain the flow of the cooling water smoothly and obtain an excellent cooling effect.
  • a body for a vacuum chamber provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus, which is provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus which can maintain the flow of the cooling water smoothly and obtain an excellent cooling effect.
  • Silicon wafers for semiconductors are used to make various types of semiconductor devices such as DRAM, application specific integrated circuits (ASICs), transistors (TRs), MOSFETs, CMOS, PMOS, ROM, or EP-ROMs. It is an indispensable part of the whole, and is used in various electronic products, industrial automation machines, computers, and satellites.
  • ASICs application specific integrated circuits
  • TRs transistors
  • MOSFETs MOSFETs
  • CMOS complementary metal oxide
  • PMOS PMOS
  • ROM ROM
  • EP-ROMs Erasable programmable read-only memory
  • Such a semiconductor silicon wafer is obtained by first producing a silicon ingot and then cutting it to a constant thickness.
  • FIG. 1 is a schematic cross-sectional view of a silicon ingot growth apparatus for manufacturing a silicon ingot
  • FIG. 2 is a perspective view illustrating a body for a vacuum chamber provided in the silicon ingot growth apparatus shown in FIG. 1
  • FIG. 3 is a line AA of FIG. 2.
  • 4 is a perspective view illustrating a state in which the upper flange is removed from the body for the vacuum chamber of FIG. 2.
  • the silicon ingot growth apparatus 1 includes a vacuum chamber, a crucible 4 of quartz material provided inside the vacuum chamber to accommodate a silicon melt, and a crucible 4 inside the vacuum chamber.
  • the vacuum chamber consists of a domed lid (3), a cylindrical body (10), and a base plate (7). Cooling means is provided in a configuration constituting the vacuum chamber.
  • the lid 3 is connected to the upper portion of the body 10, and the base plate 7 is connected to the lower portion of the body 10.
  • the body 10 and the lid 3, and the body 10 and the base plate 7 may be welded to each other, or may be connected by bolting to have a flange. Since the inside of the vacuum chamber should be maintained in a vacuum, a seal means is provided at the connection portion of the body 10 and the lid 3 and the connection portion of the body 10 and the base plate 7. The space surrounded by the heat insulating material and kept at a high temperature is called a hot zone 8 in particular.
  • reference numeral 20 shows a growth tower and 21 shows a grown silicon ingot.
  • the body 10 includes an annular upper flange 15, an annular lower flange 17 spaced downward from the upper flange 15, and an upper end thereof.
  • a cylindrical outer member 11 connected to the upper flange 15 and the lower end connected to the lower flange 17, and an upper end connected to the upper flange 15 and a lower end connected to the lower flange 17. It consists of an inner member 13.
  • a radius is formed between the outer member 11 and the inner member 13.
  • the gap is formed in the direction.
  • a space 12 is formed inside the body 10 by the upper flange 15, the lower flange 17, the inner member 13, and the outer member 11.
  • the outer member 11 is spaced up and down and provided with an inlet 18 and an outlet 19, and the inlet 18 and the outlet 19 communicate with the space 12. 2 and 3 the outlet 19 is provided as close to the upper flange 15 as possible, and the inlet 18 is provided as close to the lower flange 17 as possible.
  • the coolant is continuously injected into the inlet 18 and the coolant is discharged into the outlet 19 to cool the body 10. Detailed description of the growth of the silicon ingot is omitted.
  • the body 10 provided in the conventional vacuum chamber is injected into the space portion 12 through the inlet 18 so that the coolant filled from the bottom is discharged through the outlet 19 of the upper portion of the upper flange of the body 10
  • the upper flange 15 of the body 10 may not be sufficiently cooled because the upper flange 15 is not sufficiently cooled because the upper flange 15 may not be discharged without reaching up to 15 or may not flow smoothly in the upper portion of the body 10, that is, the lower portion of the upper flange 15.
  • the sealing is provided between the lid 15 and the vacuum seal 3 is damaged, the deformation occurs in the body 10 and the upper flange 15 and corrosion occurs in a short time.
  • the present invention has been proposed to solve the above problems, the cooling water is filled up to the lower portion of the upper flange and flows along the lower portion of the upper flange and then discharged to the outlet to sufficiently cool the upper flange damage of the sealing by high temperature It is an object of the present invention to provide a silicon ingot growth apparatus and a body for a vacuum chamber provided in the silicon ingot growth apparatus, which can be prevented and also prevent corrosion or deformation occurring in the body and the upper flange.
  • the present invention provides a vacuum chamber consisting of one or more bodies which are hollow bodies having a guide member, a crucible provided inside the vacuum chamber, a heater provided around the crucible inside the vacuum chamber, A heat insulator provided around the heater inside the vacuum chamber;
  • the body is a double tube body with both ends sealed to form a space between the pipe body, the inlet is provided with a coolant is injected into the space and the outlet is spaced from the inlet and the outlet for cooling water discharged from the space;
  • the guide member is provided in the space portion so that the inlet is located on one side and the outlet is located on the other side, and a guide portion forming a gap communicating with the outlet from the inlet, and extending from the guide to one end of the body and between the gap and the outlet. Including a located blocking portion, the cooling water introduced through the inlet is provided through the gap and flows along the guide to provide a silicon ingot growth apparatus discharged to the outlet.
  • the present invention is the body is an annular upper flange, an annular lower flange provided to be spaced apart from the upper flange, the outer container is one end is connected to the upper flange and the other end is connected to the lower flange, and one end An inner container which is connected to the upper flange and whose other end is connected to the lower flange and which is spaced inwardly of the outer container; The space portion is formed by the upper flange, the lower flange, the inner container and the outer container; The inlet and outlet are spaced apart from each other vertically to provide a silicon ingot growth apparatus provided in the outer container.
  • the present invention provides a silicon ingot growth apparatus, wherein the inner edge of the guide portion is connected to the inner container, the outer edge is connected to the outer container, and the gap is provided adjacent to the outlet.
  • the present invention in the vacuum chamber body is provided with one or more in the silicon ingot growth apparatus, the body is a double tube formed with a space between the two ends is sealed between the tube, the injection hole in which the coolant is injected into the space, and the injection hole A discharge member spaced apart from the discharge port through which the coolant is discharged from the space, and a guide member provided in the space to guide the coolant;
  • the guide member is provided in the space portion so that the inlet is located on one side and the outlet is located on the other side, and a guide portion forming a gap communicating with the outlet from the inlet, and extending from the guide to one end of the body and between the gap and the outlet.
  • the cooling water introduced through the injection port provides a body for the vacuum chamber provided in the silicon ingot growth apparatus discharged to the discharge port through the gap and flows along the guide.
  • the present invention is the body is an annular upper flange, an annular lower flange provided to be spaced apart from the upper flange, the outer container is one end is connected to the upper flange and the other end is connected to the lower flange, and one end An inner container which is connected to the upper flange and whose other end is connected to the lower flange and which is spaced inwardly of the outer container;
  • the space portion is formed by the upper flange, the lower flange, the inner container and the outer container;
  • the inlet and outlet are spaced vertically apart from each other to provide a body for the vacuum chamber provided in the silicon ingot growth apparatus provided in the outer container, the outlet is close to the upper flange, the inlet is close to the lower flange.
  • the present invention provides a body for the vacuum chamber is provided in the silicon ingot growth apparatus, the inner edge of the guide portion is connected to the inner container and the outer edge is connected to the outer container, the gap is provided adjacent to the outlet.
  • the present invention is the outer container and the inner container is a tubular body of circular cross section;
  • the guide portion is circularly arced at both ends and has an inner edge connected to the inner container and an outer edge connected to the outer container;
  • the gap provides a body for the vacuum chamber provided in the silicon ingot growth apparatus formed between the guide, the outer container and the inner container.
  • the present invention is the outer container and the inner container is a tubular body of circular cross section;
  • the guide is annular with an inner edge connected to the inner container and an outer edge connected to the outer container;
  • the gap provides a body for a vacuum chamber provided in the silicon ingot growth apparatus that is a through hole formed in the guide portion.
  • the outer container and the inner container is a tubular body having a circular cross section and is formed in a cross-sectional annular shape of the space portion, the injection hole is provided in the silicon ingot growth apparatus provided to have an acute angle with respect to the tangential direction of the space portion Provided is a body for a vacuum chamber.
  • the vacuum chamber body provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus according to the present invention is the coolant guided by the guide member 110 provided in the body 100 to the upper flange 105 of the body 100. Since it can reach and flow smoothly along the lower portion of the upper flange 105, the discharge can be effectively cooled the upper and upper flanges 105 of the body 100 in a simple configuration.
  • FIG. 1 is a schematic cross-sectional view showing a silicon ingot growth apparatus.
  • FIG. 2 is a perspective view illustrating a body for a vacuum chamber provided in the silicon ingot growth apparatus of FIG. 1.
  • FIG. 3 is a cross-sectional view taken along the line A-A of FIG.
  • FIG. 4 is a perspective view illustrating a state in which the upper flange is removed from the body for the vacuum chamber of FIG. 2.
  • FIG. 5 is a perspective view showing a body for a vacuum chamber according to the present invention.
  • FIG. 6 is a schematic perspective view illustrating a state in which the upper flange is removed from the body for the vacuum chamber of FIG. 5.
  • FIG. 7 is an enlarged view of a portion A of FIG. 6.
  • FIG. 8 is a plan view of the body for the vacuum chamber of FIG.
  • Figure 9 is a schematic perspective view showing a guide member provided in the body for the vacuum chamber according to the present invention.
  • FIG. 10 is an enlarged view of a portion A of FIG. 9 and illustrates a modified example of the guide member provided in the body for a vacuum chamber according to the present invention.
  • FIG. 11 is a schematic perspective view showing another embodiment of a guide member provided in the body for a vacuum chamber according to the present invention.
  • FIG. 14 is a cross-sectional view taken along line B-B of FIG. 5.
  • FIG. 5 is a perspective view showing a body for a vacuum chamber according to the present invention
  • Figure 6 is a schematic partial perspective view showing a state in which the upper flange is removed from the body for the vacuum chamber of Figure 5
  • Figure 7 is part
  • a of Figure 6 8 is a plan view illustrating the vacuum chamber body of FIG. 5
  • FIG. 9 is a schematic perspective view illustrating a guide member provided in the vacuum chamber body according to the present invention
  • FIG. 10 is FIG. 9.
  • Figure 11 shows another embodiment of the guide member provided in the body for the vacuum chamber according to the present invention
  • 12 and 13 are schematic cross-sectional views taken along line AA of FIG. 5
  • FIG. 14 is a cross-sectional view taken along line BB of FIG. 5.
  • the vertical direction of FIG. 5 will be described as an up-down direction or an axial direction, and a description of a configuration overlapping with the prior art will be omitted.
  • the silicon ingot growth apparatus has a vacuum chamber made of a body 100, which is a hollow body having a guide member 110 connected to a base plate connected to a lower portion thereof, and a crucible provided inside the vacuum chamber. And a heater provided around the crucible inside the vacuum chamber and a heat insulating material provided around the heater in the vacuum chamber.
  • the body 100 is a hollow cylindrical body, and the crucible is positioned inside the body 100 (see FIG. 1).
  • the body 100 may be divided into upper and lower sides and provided with two or more cylindrical bodies stacked vertically. Therefore, two or more cylindrical bodies 100 may be provided in a vertically connected state.
  • the lower portion of the other body 100 is connected to the upper portion of the body 100 positioned at the lower portion, and the lid is connected to the upper portion of the body 100 positioned at the upper portion.
  • the body 100 is a double tube body formed in the space portion 102 between the upper and lower ends are sealed between the tube, the space portion 102 ) Is provided with an inlet 108 through which coolant is injected and an outlet 109 spaced apart from the inlet 108 and discharging the coolant from the space 102.
  • the outlet 109 is provided at an upper portion, and the injection hole 108 is provided spaced downward from the outlet 109.
  • the body 100 has an annular upper flange 105 connected to the lid, an annular lower flange 107 provided to be spaced downward from the upper flange 105, and one end of the upper portion.
  • An outer container 101 which is connected to the flange 105 and the other end is a tube connected to the lower flange 107, and one end is connected to the upper flange 105, and the other end is connected to the lower flange 107. It consists of an inner container 103 which is a tubular body provided spaced inward of 101. A gap is formed between the outer container 101 and the inner container 103, and the space portion 102 includes the upper flange 105, the lower flange 107, the inner container 103, and the outer container ( 101).
  • the injection port 108 and the discharge port 109 are spaced vertically apart from each other provided in the outer container 101, it is communicated to the space 102.
  • the guide member 110 is provided in the space portion 102 so that the injection port 108 is located on one side and the discharge port 109 is located on the other side and the discharge port from the injection hole 108
  • a guide part 111 forming a communication path 115 communicating with 109, and extending from the guide part 111 to one end of the body 100 and positioned between the communication path 115 and the outlet 109. It is configured to include a blocking unit 113.
  • An outlet 109 is positioned above the guide 111, and an injection hole 108 is positioned below the guide 111. 6 to 9 illustrate the path through which the coolant flows.
  • two or more injection holes 108 may be provided, and when the cross section of the space portion 102 is formed in an annular shape, the injection hole 108 may be a space portion ( It is preferable that the coolant is formed to have an acute angle with the tangential direction of the 102 and injected into the space 102 through the injection hole 108 so as to pivot along the space 102 as shown by the arrow in FIG. 14. . As shown by arrows in FIG. 14, when the coolant is swiveled upward, the cooling of the body 100 may be uniform and effective.
  • the inner edge of the guide 111 is connected to the inner container 103 and the outer edge is connected to the outer container 101, the upper flange 105 as shown in FIGS. 5, 8, 12 and 13. ), A passage 119 through which the coolant flowing into the upper portion of the guide portion 111 flows through the communication passage 115 formed by the inner container 103, the outer container 101, and the guide portion 111. Is formed.
  • the cross-sectional area of the passage 119 is preferably in the range of 80% to 120% of the cross-sectional area of the outlet 109.
  • the cross-sectional area of the passage 119 is smaller than 80% of the cross-sectional area of the outlet 109, the pressure rises in the passage 119 to become high pressure, and if the cross-sectional area of the passage 119 is larger than 120%, the flow velocity decreases in the passage 119, thereby causing 105) cannot be sufficiently cooled.
  • the outer container 101 and the inner container 103 may be cylindrical cylinders having a circular cross section.
  • the outer container 101 and the inner container 103 are provided to form concentric circles with each other.
  • the inner diameter of the outer container 101 is larger than the outer diameter of the inner container 103 is formed between the outer container 101 and the inner container 103 in the radial direction.
  • the upper flange 105 is annularly coupled to the upper portion of the outer container 101 and the inner container 103.
  • the inner diameter of the upper flange 105 is the same as or smaller than the inner diameter of the inner container 103, the outer diameter of the upper flange 105 is formed larger than the outer diameter of the outer container 101 to the upper flange 105
  • the gap formed between the outer container 101 and the inner container 103 is closed in the axial direction.
  • the inner diameter of the upper flange 105 may be manufactured larger than the inner diameter of the inner container 103 and smaller than the outer diameter of the inner container 103.
  • the lower flange 107 is coupled to the lower portion of the outer container 101 and the inner container 103 in an annular shape.
  • the inner diameter of the lower flange 107 is formed to be the same as or smaller than the inner diameter of the inner container 103, the outer diameter of the lower flange 107 is formed larger than the outer diameter of the outer container 101 to the outside by the lower flange 107
  • the gap formed between the container 101 and the inner container 103 is closed in the axial direction.
  • the upper flange 105 and the lower flange 107 are coupled to the outer container 101 and the inner container 103 by welding or the like.
  • the outlet 109 is provided in the outer container 101 adjacent to the upper flange 105, and the inlet 108 is provided in the outer container 101 adjacent to the lower flange 107.
  • the guide part 111 of the guide member 110 is formed in an arc shape in which a portion of the guide member 110 is cut off, and both ends thereof are spaced apart from each other, and the blocking part 113 extends upward from one end. .
  • the blocking unit 113 does not necessarily need to be extended from the guide unit 111 and may be extended to have a gentle inclination as shown in FIG. 10.
  • the guide member 110 When the guide member 110 is provided between the outer container 101 and the inner container 103, that is, in the space 102, the guide member 111 is cut as shown in FIGS. 6 and 8. The portion is positioned adjacent to the outlet 109.
  • a communication path 115 through which the coolant flows into the passage 119 is formed by the cut portion of the guide part 111, the inner surface of the outer container 101, and the outer surface of the inner container 103.
  • the blocking part 113 extends from the guide part 111 and is located between the communication path 115 and the outlet 109.
  • the blocking portion 113 extends from the guide portion 111 to the upper flange 105 to block the passage 119. Therefore, the cooling water introduced into the passage 119 through the communication path 115 from the bottom flows along the passage 119 to be blocked by the blocking portion 113 and is discharged to the outlet 109.
  • the outlet 109 and the communication path 115 are preferably located as close to each other as possible.
  • the communication path 115 may be formed by forming the guide portion 111 in an annular shape and drilling a through hole in the guide portion 111. In this case, the communication path 115 is formed by a through hole.
  • FIG. 11 illustrates a guide member 110 according to another embodiment of the present invention.
  • the guide 113 may be provided with two parts 113.
  • the communication path 115 is formed between the spaced both ends of the guide part 111 and the outer container 101 and the inner container 103.
  • the communication path 115 is positioned to be adjacent to the discharge port 109, and each blocking portion 113 is located between the discharge port 109 and the communication path 115 at a close distance to each other.
  • FIG. 11 illustrates a case in which two discharge ports 109 are provided opposite to the outer container 101.
  • the two communication paths 115 are provided at an angle of 180 ° and the blocking part 113 is likewise. ) Is also provided at an angle of 180 °.
  • three outlets 109 are provided in the outer container 101 at three angles of 120 °, three communication paths 115 having three guide parts 111 and having angles of 120 ° to each other, Three blocking portions 113 are provided.
  • the arrow shows a path through which the coolant flows when the guide member 110 is provided in the space.
  • the size of the communication path 115 formed by the guide part 111 is as small as possible to increase the flow distance of the coolant, but the inlet 108 is used to smoothly flow the coolant into the passage 119. It can have the same size as the cross-sectional area.
  • the guide 111 may be provided horizontally, or may be provided to be inclined toward any one side.
  • the coolant When the coolant is injected into the injection hole 108 provided in the outer container 101 adjacent to the lower flange 107 in the vacuum chamber body 100 provided in the silicon ingot growth apparatus according to the present invention, the coolant is a space portion ( When it reaches the lower portion of the guide portion 111 of the guide member 110 from the lower portion of the 102, it is introduced into the passage 119 through the communication path 115, flows along the passage 119 and then to the blocking portion 113. This leads to discharge through the outlet 109 adjacent to the blocking portion 113.
  • the coolant flows along the lower part of the upper flange 105 and the upper part of the outer container 101 and the inner container 103 and then discharges, so that the upper flange 105 and the outer container 101 and the inner container 103 are discharged. It is possible to effectively cool the top of the.
  • 'adjacent' in the above is meant to include a position close to each other to a range not overlapping with being spaced close to each other.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention relates to an apparatus for growing silicon ingots, comprising: a vacuum chamber consisting of one or more hollow bodies (100), each of which has a guide member (110); a crucible arranged within the vacuum chamber; a heater arranged around the crucible in the vacuum chamber; and a heat-insulating member arranged around the heater in the vacuum chamber. The present invention also relates to a body for the vacuum chamber for the apparatus for growing silicon ingots. The apparatus for growing silicon ingots of the present invention is advantageous in that cooling water guided by the guide member (110) arranged in the main body (100) reaches an upper flange (105) of the main body (100), smoothly flows along the lower portion of the upper flange (105), and is discharged, thus effectively cooling the upper portion of the main body (100) and the upper flange (105) by means of the simple configuration of the apparatus of the present invention.

Description

실리콘 잉곳 성장 장치 및 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체Body for vacuum chamber provided in silicon ingot growth apparatus and silicon ingot growth apparatus
본 발명은 실리콘 잉곳 성장 장치 및 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체에 관한 것으로, 냉각수의 흐름을 원활하게 유지하여 우수한 냉각효과를 얻을 수 있는 실리콘 잉곳 성장 장치 및 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체에 관한 것이다.The present invention relates to a body for a vacuum chamber provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus, which is provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus which can maintain the flow of the cooling water smoothly and obtain an excellent cooling effect. A body for a vacuum chamber.
반도체용 실리콘 웨이퍼는 DRAM, ASIC(application specific integrated circuit), TR(transistor), MOSFET, CMOS, PMOS, ROM 또는 EP-ROM 등과 같은 다양한 형태의 반도체 디바이스를 만드는데 이용되며, 이들 반도체 디바이스들은 오늘날 산업분야 전체에서 없어서는 안 될 중요한 부품들로서 각종 전자제품, 산업 자동화기계, 컴퓨터, 인공위성 등에 쓰이고 있다. 이러한 반도체용 실리콘 웨이퍼는 먼저, 실리콘 잉곳을 제조한 후, 이를 일정한 두께로 절단하여 얻는다.Silicon wafers for semiconductors are used to make various types of semiconductor devices such as DRAM, application specific integrated circuits (ASICs), transistors (TRs), MOSFETs, CMOS, PMOS, ROM, or EP-ROMs. It is an indispensable part of the whole, and is used in various electronic products, industrial automation machines, computers, and satellites. Such a semiconductor silicon wafer is obtained by first producing a silicon ingot and then cutting it to a constant thickness.
도 1은 실리콘 잉곳을 제조하는 실리콘 잉곳 성장 장치의 개략적 단면도이며, 도 2는 도 1에 도시한 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 도시한 사시도이며, 도 3은 도 2의 A-A선에 따르는 단면도이며, 도 4는 도 2의 진공 챔버용 몸체에서 상부 플랜지를 제거한 상태를 도시한 사시도이다.1 is a schematic cross-sectional view of a silicon ingot growth apparatus for manufacturing a silicon ingot, FIG. 2 is a perspective view illustrating a body for a vacuum chamber provided in the silicon ingot growth apparatus shown in FIG. 1, and FIG. 3 is a line AA of FIG. 2. 4 is a perspective view illustrating a state in which the upper flange is removed from the body for the vacuum chamber of FIG. 2.
도 1에 도시한 바와 같이 실리콘 잉곳 성장 장치(1)는 진공 챔버와, 상기 진공 챔버의 내측으로 구비되어 실리콘 용융체가 수용되는 석영재질의 도가니(4)와, 상기 진공 챔버의 내측에서 도가니(4) 주위로 구비되어 수용된 실리콘 용융체에 열원을 공급하는 히터(5)와, 상기 진공 챔버의 내측에서 상기 히터(5)를 에워싸서 상기 진공 챔버의 몸체(10)로 방출되는 열을 차단하는 단열재(6)를 포함하여 구성된다. 상기 진공 챔버는 돔형 뚜껑(3)과, 원통형인 몸체(10)와, 베이스 플레이트(7)로 이루어지며, 진공 챔버를 이루는 구성에는 냉각 수단이 구비된다. 상기 몸체(10)의 상부로 뚜껑(3)이 연결되고, 몸체(10)의 하부로 베이스 플레이트(7)가 연결된다. 상기 몸체(10)와 뚜껑(3), 그리고 몸체(10)와 베이스 플레이트(7)는 서로 용접 연결될 수도 있고, 플랜지를 구비하도록 하여 볼트로 체결하여 연결하기도 한다. 그리고 진공 챔버의 내측은 진공으로 유지되어야 하므로, 몸체(10)와 뚜껑(3)의 연결부와, 몸체(10)와 베이스 플레이트(7)의 연결부에는 씰(Seal) 수단이 구비된다. 단열재로 둘러싸여서 고온으로 유지되는 공간을 특히, 핫존(hot zone)(8)이라 한다. 도 1에서 도면부호 20은 성장탑을, 21은 성장된 실리콘 잉곳을 도시한 것이다. As shown in FIG. 1, the silicon ingot growth apparatus 1 includes a vacuum chamber, a crucible 4 of quartz material provided inside the vacuum chamber to accommodate a silicon melt, and a crucible 4 inside the vacuum chamber. A heater 5 for supplying a heat source to the received silicon melt and surrounding the heater 5 inside the vacuum chamber to block heat emitted to the body 10 of the vacuum chamber. 6) including. The vacuum chamber consists of a domed lid (3), a cylindrical body (10), and a base plate (7). Cooling means is provided in a configuration constituting the vacuum chamber. The lid 3 is connected to the upper portion of the body 10, and the base plate 7 is connected to the lower portion of the body 10. The body 10 and the lid 3, and the body 10 and the base plate 7 may be welded to each other, or may be connected by bolting to have a flange. Since the inside of the vacuum chamber should be maintained in a vacuum, a seal means is provided at the connection portion of the body 10 and the lid 3 and the connection portion of the body 10 and the base plate 7. The space surrounded by the heat insulating material and kept at a high temperature is called a hot zone 8 in particular. In FIG. 1, reference numeral 20 shows a growth tower and 21 shows a grown silicon ingot.
상기 몸체(10)는 도 2 내지 도 4에 도시한 바와 같이, 환형상의 상부 플랜지(15)와, 상기 상부 플랜지(15)로부터 하향 이격되어 구비되는 환형상의 하부 플랜지(17)와, 상단은 상기 상부 플랜지(15)로 연결되고 하단은 하부 플랜지(17)에 연결되는 원통형의 외측 부재(11)와, 상단은 상기 상부 플랜지(15)로 연결되고 하단은 하부 플랜지(17)에 연결되는 원통형의 내측 부재(13)로 구성된다.As shown in FIGS. 2 to 4, the body 10 includes an annular upper flange 15, an annular lower flange 17 spaced downward from the upper flange 15, and an upper end thereof. A cylindrical outer member 11 connected to the upper flange 15 and the lower end connected to the lower flange 17, and an upper end connected to the upper flange 15 and a lower end connected to the lower flange 17. It consists of an inner member 13.
상기 외측 부재(11)의 내경은 내측 부재(13)의 외경보다 크고, 외측 부재(11)와 내측 부재(13)는 동심원을 이루므로, 외측 부재(11)와 내측 부재(13) 사이에는 반경 방향으로 간격이 형성된다. 상기 상부 플랜지(15)와, 하부 플랜지(17)와, 내측 부재(13)와, 외측 부재(11)에 의하여 몸체(10)의 내부에는 공간부(12)가 형성된다.Since the inner diameter of the outer member 11 is larger than the outer diameter of the inner member 13, and the outer member 11 and the inner member 13 form concentric circles, a radius is formed between the outer member 11 and the inner member 13. The gap is formed in the direction. A space 12 is formed inside the body 10 by the upper flange 15, the lower flange 17, the inner member 13, and the outer member 11.
상기 외측 부재(11)에는 상하로 이격되어 주입구(18)와 배출구(19)가 구비되며, 상기 주입구(18)와 배출구(19)는 공간부(12)로 연통된다. 도 2 및 도 3에 도시한 바와 같이 상기 배출구(19)는 가능한 한 상부 플랜지(15)에 근접하게 구비되며, 주입구(18)는 가능한 한 하부 플랜지(17)에 근접하게 구비된다.The outer member 11 is spaced up and down and provided with an inlet 18 and an outlet 19, and the inlet 18 and the outlet 19 communicate with the space 12. 2 and 3 the outlet 19 is provided as close to the upper flange 15 as possible, and the inlet 18 is provided as close to the lower flange 17 as possible.
실리콘 잉곳 성장 장치(1)로 실리콘 잉곳을 성장시키는 공정 중, 계속해서 상기 주입구(18)로 냉각수를 주입하고, 배출구(19)로 냉각수를 배출시킴으로써 몸체(10)를 냉각시킨다. 실리콘 잉곳의 성장에 대한 상세한 설명은 생략한다.During the process of growing the silicon ingot with the silicon ingot growth apparatus 1, the coolant is continuously injected into the inlet 18 and the coolant is discharged into the outlet 19 to cool the body 10. Detailed description of the growth of the silicon ingot is omitted.
종래의 진공 챔버에 구비되는 몸체(10)는 주입구(18)를 통하여 공간부(12)로 주입되어 하부로부터 차오른 냉각수가 상부의 배출구(19)를 통하여 배출되는 과정에서 몸체(10)의 상부 플랜지(15)까지 도달하지 못하고 배출되거나 몸체(10)의 상부 즉, 상부 플랜지(15)의 하부에서 원활하게 유동하지 못하여 상부 플랜지(15)가 충분히 냉각되지 않아 고온에 의하여 몸체(10)의 상부 플랜지(15)와 뚜껑(3) 사이에 구비되어 진공 밀폐시키는 씰링이 손상되며, 몸체(10)와 상부 플랜지(15)에도 변형이 발생하고 짧은 시간에 부식이 발생하는 문제점이 있었다.The body 10 provided in the conventional vacuum chamber is injected into the space portion 12 through the inlet 18 so that the coolant filled from the bottom is discharged through the outlet 19 of the upper portion of the upper flange of the body 10 The upper flange 15 of the body 10 may not be sufficiently cooled because the upper flange 15 is not sufficiently cooled because the upper flange 15 may not be discharged without reaching up to 15 or may not flow smoothly in the upper portion of the body 10, that is, the lower portion of the upper flange 15. There is a problem that the sealing is provided between the lid 15 and the vacuum seal 3 is damaged, the deformation occurs in the body 10 and the upper flange 15 and corrosion occurs in a short time.
본 발명은 상기와 같은 문제점을 해결하기 위하여 제안된 것으로, 냉각수가 상부 플랜지의 하부까지 차오르며 상부 플랜지의 하부를 따라 유동한 후 배출구로 배출되도록 함으로써 상부 플랜지를 충분하게 냉각시켜 고온에 의한 씰링의 손상이 방지되며 몸체 및 상부 플랜지에 발생하는 부식이나 변형도 억제할 수 있는 실리콘 잉곳 성장 장치 및 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 제공하는 것을 목적으로 한다. The present invention has been proposed to solve the above problems, the cooling water is filled up to the lower portion of the upper flange and flows along the lower portion of the upper flange and then discharged to the outlet to sufficiently cool the upper flange damage of the sealing by high temperature It is an object of the present invention to provide a silicon ingot growth apparatus and a body for a vacuum chamber provided in the silicon ingot growth apparatus, which can be prevented and also prevent corrosion or deformation occurring in the body and the upper flange.
상기 목적을 달성하기 위하여, 본 발명은 안내부재를 구비하는 중공체인 하나 이상의 몸체로 이루어진 진공 챔버와, 상기 진공 챔버 내측으로 구비되는 도가니와, 상기 진공 챔버 내측에서 도가니 주위로 구비되는 히터와, 상기 진공 챔버 내측에서 상기 히터 주위로 구비되는 단열재를 포함하며; 상기 몸체는 양단이 밀봉되어 관체 사이에 공간부가 형성된 이중 관체로서, 상기 공간부로 냉각수가 주입되는 주입구와 상기 주입구로부터 이격되며 공간부로부터 냉각수가 배출되는 배출구를 구비하며; 상기 안내부재는 일측으로 주입구가 위치하고 타측으로 배출구가 위치하도록 상기 공간부에 구비되며 주입구로부터 배출구로 연통되는 틈새를 형성하는 안내부와, 상기 안내부로부터 몸체의 일단까지 연장되며 틈새와 배출구 사이에 위치하는 차단부를 포함하여, 주입구를 통하여 유입된 냉각수는 틈새를 통하고 안내부를 따라 유동하여 배출구로 배출되는 실리콘 잉곳 성장 장치를 제공한다.In order to achieve the above object, the present invention provides a vacuum chamber consisting of one or more bodies which are hollow bodies having a guide member, a crucible provided inside the vacuum chamber, a heater provided around the crucible inside the vacuum chamber, A heat insulator provided around the heater inside the vacuum chamber; The body is a double tube body with both ends sealed to form a space between the pipe body, the inlet is provided with a coolant is injected into the space and the outlet is spaced from the inlet and the outlet for cooling water discharged from the space; The guide member is provided in the space portion so that the inlet is located on one side and the outlet is located on the other side, and a guide portion forming a gap communicating with the outlet from the inlet, and extending from the guide to one end of the body and between the gap and the outlet. Including a located blocking portion, the cooling water introduced through the inlet is provided through the gap and flows along the guide to provide a silicon ingot growth apparatus discharged to the outlet.
또한, 본 발명은 상기 몸체는 환형상의 상부 플랜지와, 상기 상부 플랜지로부터 이격되어 구비되는 환형상의 하부 플랜지와, 일단이 상기 상부 플랜지에 연결되며 타단은 하부 플랜지에 연결되는 관체인 외측 용기와, 일단이 상기 상부 플랜지에 연결되고 타단이 하부 플랜지에 연결되며 외측 용기의 내측으로 이격 구비되는 관체인 내측 용기로 이루어지고; 상기 공간부는 상기 상부 플랜지, 하부 플랜지, 내측 용기 및 외측 용기에 의하여 형성되며; 상기 주입구와 배출구는 서로 상하로 이격되어 외측 용기에 구비되는 실리콘 잉곳 성장 장치를 제공한다.In addition, the present invention is the body is an annular upper flange, an annular lower flange provided to be spaced apart from the upper flange, the outer container is one end is connected to the upper flange and the other end is connected to the lower flange, and one end An inner container which is connected to the upper flange and whose other end is connected to the lower flange and which is spaced inwardly of the outer container; The space portion is formed by the upper flange, the lower flange, the inner container and the outer container; The inlet and outlet are spaced apart from each other vertically to provide a silicon ingot growth apparatus provided in the outer container.
또한, 본 발명은 상기 안내부의 내측 가장자리는 내측 용기에 연결되고 외측 가장자리는 외측 용기에 연결되며, 상기 틈새는 배출구에 인접하여 구비되는 실리콘 잉곳 성장 장치를 제공한다.In addition, the present invention provides a silicon ingot growth apparatus, wherein the inner edge of the guide portion is connected to the inner container, the outer edge is connected to the outer container, and the gap is provided adjacent to the outlet.
한편, 본 발명은 실리콘 잉곳 성장 장치에 하나 이상 구비되는 진공 챔버용 몸체에 있어서, 상기 몸체는 양단이 밀봉되어 관체 사이에 공간부가 형성된 이중 관체로서, 상기 공간부로 냉각수가 주입되는 주입구와, 상기 주입구로부터 이격되며 공간부로부터 냉각수가 배출되는 배출구와, 상기 공간부에 구비되어 냉각수를 안내하는 안내부재를 포함하며; 상기 안내부재는 일측으로 주입구가 위치하고 타측으로 배출구가 위치하도록 상기 공간부에 구비되며 주입구로부터 배출구로 연통되는 틈새를 형성하는 안내부와, 상기 안내부로부터 몸체의 일단까지 연장되며 틈새와 배출구 사이에 위치하는 차단부를 포함하여, 상기 주입구를 통하여 유입된 냉각수는 틈새를 통하고 안내부를 따라 유동하여 배출구로 배출되는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 제공한다.On the other hand, the present invention in the vacuum chamber body is provided with one or more in the silicon ingot growth apparatus, the body is a double tube formed with a space between the two ends is sealed between the tube, the injection hole in which the coolant is injected into the space, and the injection hole A discharge member spaced apart from the discharge port through which the coolant is discharged from the space, and a guide member provided in the space to guide the coolant; The guide member is provided in the space portion so that the inlet is located on one side and the outlet is located on the other side, and a guide portion forming a gap communicating with the outlet from the inlet, and extending from the guide to one end of the body and between the gap and the outlet. Including a blocking unit located therein, the cooling water introduced through the injection port provides a body for the vacuum chamber provided in the silicon ingot growth apparatus discharged to the discharge port through the gap and flows along the guide.
또한, 본 발명은 상기 몸체는 환형상의 상부 플랜지와, 상기 상부 플랜지로부터 이격되어 구비되는 환형상의 하부 플랜지와, 일단이 상기 상부 플랜지에 연결되며 타단은 하부 플랜지에 연결되는 관체인 외측 용기와, 일단이 상기 상부 플랜지에 연결되고 타단이 하부 플랜지에 연결되며 외측 용기의 내측으로 이격 구비되는 관체인 내측 용기로 이루어지고; 상기 공간부는 상기 상부 플랜지, 하부 플랜지, 내측 용기 및 외측 용기에 의하여 형성되며; 상기 주입구와 배출구는 서로 상하로 이격되어 배출구는 상부 플랜지에 가깝게, 주입구는 하부 플랜지에 가깝게 외측 용기에 구비되는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 제공한다.In addition, the present invention is the body is an annular upper flange, an annular lower flange provided to be spaced apart from the upper flange, the outer container is one end is connected to the upper flange and the other end is connected to the lower flange, and one end An inner container which is connected to the upper flange and whose other end is connected to the lower flange and which is spaced inwardly of the outer container; The space portion is formed by the upper flange, the lower flange, the inner container and the outer container; The inlet and outlet are spaced vertically apart from each other to provide a body for the vacuum chamber provided in the silicon ingot growth apparatus provided in the outer container, the outlet is close to the upper flange, the inlet is close to the lower flange.
또한, 본 발명은 상기 안내부의 내측 가장자리는 내측 용기에 연결되고 외측 가장자리는 외측 용기에 연결되며, 상기 틈새는 배출구에 인접하여 구비되는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 제공한다.In addition, the present invention provides a body for the vacuum chamber is provided in the silicon ingot growth apparatus, the inner edge of the guide portion is connected to the inner container and the outer edge is connected to the outer container, the gap is provided adjacent to the outlet.
또한, 본 발명은 상기 외측 용기와 내측 용기는 단면이 원형인 관체이고; 상기 안내부는 양단이 이격된 원호형으로 내측 가장자리는 내측 용기에 연결되고 외측 가장자리는 외측 용기에 연결되며; 상기 틈새는 안내부와, 외측 용기와, 내측 용기 사이에 형성되는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 제공한다.In addition, the present invention is the outer container and the inner container is a tubular body of circular cross section; The guide portion is circularly arced at both ends and has an inner edge connected to the inner container and an outer edge connected to the outer container; The gap provides a body for the vacuum chamber provided in the silicon ingot growth apparatus formed between the guide, the outer container and the inner container.
또한, 본 발명은 상기 외측 용기와 내측 용기는 단면이 원형인 관체이고; 상기 안내부는 내측 가장자리는 내측 용기에 연결되고 외측 가장자리는 외측 용기에 연결된 환형상이며; 상기 틈새는 안내부에 형성된 관통공인 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 제공한다.In addition, the present invention is the outer container and the inner container is a tubular body of circular cross section; The guide is annular with an inner edge connected to the inner container and an outer edge connected to the outer container; The gap provides a body for a vacuum chamber provided in the silicon ingot growth apparatus that is a through hole formed in the guide portion.
또한, 본 발명은, 상기 외측 용기와 내측 용기는 단면이 원형인 관체이고 공간부의 단면도 환형상으로 형성되며, 상기 주입구는 공간부의 접선 방향에 대하여 예각을 가지도록 구비되는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 제공한다. In addition, the present invention, the outer container and the inner container is a tubular body having a circular cross section and is formed in a cross-sectional annular shape of the space portion, the injection hole is provided in the silicon ingot growth apparatus provided to have an acute angle with respect to the tangential direction of the space portion Provided is a body for a vacuum chamber.
본 발명에 따르는 실리콘 잉곳 성장 장치 및 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체는 몸체(100) 내에 구비되는 안내부재(110)에 의하여 안내된 냉각수가 몸체(100)의 상부 플랜지(105)까지 도달하여 상부 플랜지(105)의 하부를 따라 원활하게 유동한 후 배출될 수 있으므로 간단한 구성으로 몸체(100)의 상부 및 상부 플랜지(105)를 효과적으로 냉각시킬 수 있는 효과가 있다.The vacuum chamber body provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus according to the present invention is the coolant guided by the guide member 110 provided in the body 100 to the upper flange 105 of the body 100. Since it can reach and flow smoothly along the lower portion of the upper flange 105, the discharge can be effectively cooled the upper and upper flanges 105 of the body 100 in a simple configuration.
도 1은 실리콘 잉곳 성장 장치를 도시한 개략적인 단면도이다.1 is a schematic cross-sectional view showing a silicon ingot growth apparatus.
도 2는 도 1의 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 도시한 사시도이다.FIG. 2 is a perspective view illustrating a body for a vacuum chamber provided in the silicon ingot growth apparatus of FIG. 1.
도 3은 도 2의 A-A선에 따르는 단면도이다.3 is a cross-sectional view taken along the line A-A of FIG.
도 4는 도 2의 진공 챔버용 몸체에서 상부 플랜지를 제거한 상태를 도시한 사시도이다.4 is a perspective view illustrating a state in which the upper flange is removed from the body for the vacuum chamber of FIG. 2.
도 5는 본 발명에 따르는 진공 챔버용 몸체를 도시한 사시도이다.5 is a perspective view showing a body for a vacuum chamber according to the present invention.
도 6은 도 5의 진공 챔버용 몸체에서 상부 플랜지를 제거한 상태를 도시한 개략적인 사시도이다.FIG. 6 is a schematic perspective view illustrating a state in which the upper flange is removed from the body for the vacuum chamber of FIG. 5.
도 7은 도 6의 A부를 확대 도시한 것이다.FIG. 7 is an enlarged view of a portion A of FIG. 6.
도 8은 도 5의 진공 챔버용 몸체를 도시한 평면도이다.8 is a plan view of the body for the vacuum chamber of FIG.
도 9는 본 발명에 따르는 진공 챔버용 몸체에 구비되는 안내부재를 도시한 개략적인 사시도이다.Figure 9 is a schematic perspective view showing a guide member provided in the body for the vacuum chamber according to the present invention.
도 10은 도 9의 A부의 확대도로서 본 발명에 따르는 진공 챔버용 몸체에 구비되는 안내부재의 변형 예를 도시한 것이다.FIG. 10 is an enlarged view of a portion A of FIG. 9 and illustrates a modified example of the guide member provided in the body for a vacuum chamber according to the present invention.
도 11은 본 발명에 따르는 진공 챔버용 몸체에 구비되는 안내부재의 다른 실시 예를 도시한 개략적인 사시도이다.11 is a schematic perspective view showing another embodiment of a guide member provided in the body for a vacuum chamber according to the present invention.
도 12 및 도 13은 도 5의 A-A선에 따르는 개략적인 단면도이다.12 and 13 are schematic cross-sectional views taken along the line A-A of FIG.
도 14는 도 5의 B-B선에 따른 단면도이다.14 is a cross-sectional view taken along line B-B of FIG. 5.
이하에서, 도면을 참조하여 본 발명의 바람직한 실시 예에 따르는 실리콘 잉곳 성장 장치 및 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체를 상세하게 설명한다.Hereinafter, with reference to the drawings will be described in detail the body for the vacuum chamber provided in the silicon ingot growth apparatus and the silicon ingot growth apparatus according to a preferred embodiment of the present invention.
도 5는 본 발명에 따르는 진공 챔버용 몸체를 도시한 사시도이며, 도 6은 도 5의 진공 챔버용 몸체에서 상부 플랜지를 제거한 상태를 도시한 개략적인 일부 사시도이며, 도 7은 도 6의 A부를 확대 도시한 것이며, 도 8은 도 5의 진공 챔버용 몸체를 도시한 평면도이며, 도 9는 본 발명에 따르는 진공 챔버용 몸체에 구비되는 안내부재를 도시한 개략적인 사시도이며, 도 10은 도 9의 A부의 확대도로서 본 발명에 따르는 진공 챔버용 몸체에 구비되는 안내부재의 변형 예를 도시한 것이며, 도 11은 본 발명에 따르는 진공 챔버용 몸체에 구비되는 안내부재의 다른 실시 예를 도시한 개략적인 사시도이며, 도 12 및 도 13은 도 5의 A-A선에 따르는 개략적인 단면도이며, 도 14는 도 5의 B-B선에 따른 단면도이다.5 is a perspective view showing a body for a vacuum chamber according to the present invention, Figure 6 is a schematic partial perspective view showing a state in which the upper flange is removed from the body for the vacuum chamber of Figure 5, Figure 7 is part A of Figure 6 8 is a plan view illustrating the vacuum chamber body of FIG. 5, and FIG. 9 is a schematic perspective view illustrating a guide member provided in the vacuum chamber body according to the present invention, and FIG. 10 is FIG. 9. An enlarged view of part A of a modified example of the guide member provided in the body for the vacuum chamber according to the present invention, Figure 11 shows another embodiment of the guide member provided in the body for the vacuum chamber according to the present invention 12 and 13 are schematic cross-sectional views taken along line AA of FIG. 5, and FIG. 14 is a cross-sectional view taken along line BB of FIG. 5.
이하에서 도 5의 세로 방향을 상하 방향 또는 축방향으로 하여 기재하며, 종래 기술과 중복되는 구성에 대한 설명은 생략한다.Hereinafter, the vertical direction of FIG. 5 will be described as an up-down direction or an axial direction, and a description of a configuration overlapping with the prior art will be omitted.
본 발명에 따르는 실리콘 잉곳 성장 장치는 하부로 베이스 플레이트가 연결되며 상부로 뚜껑이 연결되며 안내부재(110)를 구비하는 중공체인 몸체(100)로 이루어진 진공 챔버와, 상기 진공 챔버 내측으로 구비되는 도가니와, 상기 진공 챔버 내측에서 도가니 주위로 구비되는 히터와, 상기 진공 챔버 내측에서 상기 히터 주위로 구비되는 단열재를 포함하여 구성된다. 도 5에 도시한 바와 같이 상기 몸체(100)는 중공의 원통체로서 상기 도가니는 몸체(100)의 내측으로 위치하게 된다(도 1 참조). 상기 몸체(100)는 상하로 분할되어 2개 이상의 원통체가 상하로 적층된 형태로 구비될 수 있다. 따라서 2개 이상의 원통형 몸체(100)가 상하로 연결된 상태로 구비될 수 있다. 몸체(100)가 2개 이상 구비되는 경우 하부에 위치하는 몸체(100)의 상부로는 다른 몸체(100)의 하부가 연결되며, 상부에 위치하는 몸체(100)의 상부로 뚜껑이 연결된다.The silicon ingot growth apparatus according to the present invention has a vacuum chamber made of a body 100, which is a hollow body having a guide member 110 connected to a base plate connected to a lower portion thereof, and a crucible provided inside the vacuum chamber. And a heater provided around the crucible inside the vacuum chamber and a heat insulating material provided around the heater in the vacuum chamber. As shown in FIG. 5, the body 100 is a hollow cylindrical body, and the crucible is positioned inside the body 100 (see FIG. 1). The body 100 may be divided into upper and lower sides and provided with two or more cylindrical bodies stacked vertically. Therefore, two or more cylindrical bodies 100 may be provided in a vertically connected state. When two or more bodies 100 are provided, the lower portion of the other body 100 is connected to the upper portion of the body 100 positioned at the lower portion, and the lid is connected to the upper portion of the body 100 positioned at the upper portion.
도 5, 도 6, 도 8, 도 12 및 도 13에 도시한 바와 같이, 상기 몸체(100)는 상하 양단이 밀봉되어 관체 사이에 공간부(102)가 형성된 이중 관체로서, 상기 공간부(102)로 냉각수가 주입되는 주입구(108)와 상기 주입구(108)로부터 이격되며 공간부(102)로부터 냉각수가 배출되는 배출구(109)를 구비한다. 상기 배출구(109)는 상부로 구비되며, 주입구(108)는 상기 배출구(109)로부터 하향 이격하여 구비된다. 보다 구체적으로 설명하면, 상기 몸체(100)는 뚜껑으로 연결되는 환형상의 상부 플랜지(105)와, 상기 상부 플랜지(105)로부터 하향 이격되어 구비되는 환형상의 하부 플랜지(107)와, 일단이 상기 상부 플랜지(105)에 연결되며 타단은 하부 플랜지(107)에 연결되는 관체인 외측 용기(101)와, 일단이 상기 상부 플랜지(105)에 연결되고 타단이 하부 플랜지(107)에 연결되며 외측 용기(101)의 내측으로 이격 구비되는 관체인 내측 용기(103)로 이루어진다. 상기 외측 용기(101)와 내측 용기(103) 사이에는 간격이 형성되어, 상기 공간부(102)는 상기 상부 플랜지(105)와, 하부 플랜지(107)와, 내측 용기(103) 및 외측 용기(101)에 의하여 형성된다. 상기 주입구(108)와 배출구(109)는 서로 상하로 이격되어 외측 용기(101)에 구비되며, 공간부(102)로 연통된다.5, 6, 8, 12 and 13, the body 100 is a double tube body formed in the space portion 102 between the upper and lower ends are sealed between the tube, the space portion 102 ) Is provided with an inlet 108 through which coolant is injected and an outlet 109 spaced apart from the inlet 108 and discharging the coolant from the space 102. The outlet 109 is provided at an upper portion, and the injection hole 108 is provided spaced downward from the outlet 109. More specifically, the body 100 has an annular upper flange 105 connected to the lid, an annular lower flange 107 provided to be spaced downward from the upper flange 105, and one end of the upper portion. An outer container 101 which is connected to the flange 105 and the other end is a tube connected to the lower flange 107, and one end is connected to the upper flange 105, and the other end is connected to the lower flange 107. It consists of an inner container 103 which is a tubular body provided spaced inward of 101. A gap is formed between the outer container 101 and the inner container 103, and the space portion 102 includes the upper flange 105, the lower flange 107, the inner container 103, and the outer container ( 101). The injection port 108 and the discharge port 109 are spaced vertically apart from each other provided in the outer container 101, it is communicated to the space 102.
도 5 내지 도 9에 도시한 바와 같이, 상기 안내부재(110)는 일측으로 주입구(108)가 위치하고 타측으로 배출구(109)가 위치하도록 상기 공간부(102)에 구비되며 주입구(108)로부터 배출구(109)로 연통되는 연통로(115)를 형성하는 안내부(111)와, 상기 안내부(111)로부터 몸체(100)의 일단까지 연장되며 연통로(115)와 배출구(109) 사이에 위치하는 차단부(113)를 포함하여 구성된다. 상기 안내부(111)의 상부로 배출구(109)가 위치하며, 상기 안내부(111)의 하부로 주입구(108)가 위치한다. 도 6 내지 도 9에서 화살표는 냉각수가 유동하는 경로를 예시한 것이다.As shown in Figure 5 to 9, the guide member 110 is provided in the space portion 102 so that the injection port 108 is located on one side and the discharge port 109 is located on the other side and the discharge port from the injection hole 108 A guide part 111 forming a communication path 115 communicating with 109, and extending from the guide part 111 to one end of the body 100 and positioned between the communication path 115 and the outlet 109. It is configured to include a blocking unit 113. An outlet 109 is positioned above the guide 111, and an injection hole 108 is positioned below the guide 111. 6 to 9 illustrate the path through which the coolant flows.
도 5 및 도 14에 도시한 바와 같이 상기 주입구(108)는 2개 이상 복수로 구비될 수 있으며, 상기 공간부(102)의 단면이 환형상으로 형성될 때 상기 주입구(108)는 공간부(102)의 접선 방향과 예각을 가지도록 형성되어 주입구(108)를 통하여 공간부(102)로 주입된 냉각수가 도 14에 화살표로 도시한 바와 같이 공간부(102)를 따라 선회하도록 하는 것이 바람직하다. 도 14에 화살표로 도시한 바와 같이 냉각수가 선회하면서 상부로 차올라 배출구(109)를 통하여 배출되는 구조를 가지는 경우 몸체(100)의 냉각이 전체적으로 균일하고 효과적으로 이루어질 수 있다.5 and 14, two or more injection holes 108 may be provided, and when the cross section of the space portion 102 is formed in an annular shape, the injection hole 108 may be a space portion ( It is preferable that the coolant is formed to have an acute angle with the tangential direction of the 102 and injected into the space 102 through the injection hole 108 so as to pivot along the space 102 as shown by the arrow in FIG. 14. . As shown by arrows in FIG. 14, when the coolant is swiveled upward, the cooling of the body 100 may be uniform and effective.
상기 안내부(111)의 내측 가장자리는 내측 용기(103)에 연결되고 외측 가장자리는 외측 용기(101)에 연결되어, 도 5, 도 8, 도 12 및 도 13에 도시한 바와 같이 상부 플랜지(105)와, 내측 용기(103)와, 외측 용기(101)와, 안내부(111)에 의하여 형성된 연통로(115)를 통하여 안내부(111)의 상부로 유입된 냉각수가 유동하는 통로(119)가 형성된다. 상기 통로(119)의 단면적은 배출구(109)의 단면적의 80%∼120% 범위로 하는 것이 바람직하다. 통로(119)의 단면적이 배출구(109) 단면적의 80%보다 작은 경우 통로(119) 내에서 압력이 상승하여 고압으로 되고, 120%보다 큰 경우 통로(119) 내에서 유속이 감소하여 상부 플랜지(105)를 충분히 냉각시킬 수 없게 된다. The inner edge of the guide 111 is connected to the inner container 103 and the outer edge is connected to the outer container 101, the upper flange 105 as shown in FIGS. 5, 8, 12 and 13. ), A passage 119 through which the coolant flowing into the upper portion of the guide portion 111 flows through the communication passage 115 formed by the inner container 103, the outer container 101, and the guide portion 111. Is formed. The cross-sectional area of the passage 119 is preferably in the range of 80% to 120% of the cross-sectional area of the outlet 109. If the cross-sectional area of the passage 119 is smaller than 80% of the cross-sectional area of the outlet 109, the pressure rises in the passage 119 to become high pressure, and if the cross-sectional area of the passage 119 is larger than 120%, the flow velocity decreases in the passage 119, thereby causing 105) cannot be sufficiently cooled.
도 6에 도시한 바와 같이 상기 외측 용기(101)와 내측 용기(103)는 단면이 원형인 원통 관체로 할 수 있다. 상기 외측 용기(101)와 내측 용기(103)는 서로 동심원을 이루도록 구비된다. 이때, 상기 외측 용기(101)의 내경은 내측 용기(103)의 외경보다 크게 형성되어 외측 용기(101)와 내측 용기(103) 사이에는 반경 방향으로 간격이 형성된다.As illustrated in FIG. 6, the outer container 101 and the inner container 103 may be cylindrical cylinders having a circular cross section. The outer container 101 and the inner container 103 are provided to form concentric circles with each other. At this time, the inner diameter of the outer container 101 is larger than the outer diameter of the inner container 103 is formed between the outer container 101 and the inner container 103 in the radial direction.
상기 상부 플랜지(105)는 환형상으로 외측 용기(101)와 내측 용기(103)의 상부로 결합된다. 상부 플랜지(105)의 내경은 내측 용기(103)의 내경과 같거나 내경보다 작게 형성되고, 상부 플랜지(105)의 외경은 외측 용기(101)의 외경보다 크게 형성되어 상기 상부 플랜지(105)에 의하여 외측 용기(101)와 내측 용기(103) 사이에 형성된 간격은 축방향으로 밀폐된다. 상기에서 상부 플랜지(105)의 내경은 내측 용기(103)의 내경보다는 크고 내측 용기(103)의 외경보다는 작게 제조하기도 한다.The upper flange 105 is annularly coupled to the upper portion of the outer container 101 and the inner container 103. The inner diameter of the upper flange 105 is the same as or smaller than the inner diameter of the inner container 103, the outer diameter of the upper flange 105 is formed larger than the outer diameter of the outer container 101 to the upper flange 105 The gap formed between the outer container 101 and the inner container 103 is closed in the axial direction. The inner diameter of the upper flange 105 may be manufactured larger than the inner diameter of the inner container 103 and smaller than the outer diameter of the inner container 103.
상기 하부 플랜지(107)는 환형상으로 외측 용기(101)와 내측 용기(103)의 하부로 결합된다. 하부 플랜지(107)의 내경은 내측 용기(103)의 내경과 같거나 작게 형성되고, 하부 플랜지(107)의 외경은 외측 용기(101)의 외경보다 크게 형성되어 상기 하부 플랜지(107)에 의하여 외측 용기(101)와 내측 용기(103) 사이에 형성된 간격은 축방향으로 밀폐된다.The lower flange 107 is coupled to the lower portion of the outer container 101 and the inner container 103 in an annular shape. The inner diameter of the lower flange 107 is formed to be the same as or smaller than the inner diameter of the inner container 103, the outer diameter of the lower flange 107 is formed larger than the outer diameter of the outer container 101 to the outside by the lower flange 107 The gap formed between the container 101 and the inner container 103 is closed in the axial direction.
상기 상부 플랜지(105)와 하부 플랜지(107)는 외측 용기(101)와 내측 용기(103)에 용접 등의 방법으로 결합된다.The upper flange 105 and the lower flange 107 are coupled to the outer container 101 and the inner container 103 by welding or the like.
상기 배출구(109)는 상부 플랜지(105)에 인접하게 외측 용기(101)에 구비되며, 주입구(108)는 하부 플랜지(107)에 인접하게 외측 용기(101)에 구비된다. The outlet 109 is provided in the outer container 101 adjacent to the upper flange 105, and the inlet 108 is provided in the outer container 101 adjacent to the lower flange 107.
도 9에 도시한 바와 같이 안내부재(110)의 안내부(111)는 링 형상에서 일부를 절단 제거한 원호형을 이루어 양단이 서로 이격되며, 일단으로부터 상방향으로 차단부(113)가 연장 구비된다. 상기 차단부(113)는 안내부(111)로부터 반드시 절곡 연장될 필요는 없으며 도 10에 도시한 바와 같이 완만한 경사를 가지도록 연장되는 것도 가능하다.As shown in FIG. 9, the guide part 111 of the guide member 110 is formed in an arc shape in which a portion of the guide member 110 is cut off, and both ends thereof are spaced apart from each other, and the blocking part 113 extends upward from one end. . The blocking unit 113 does not necessarily need to be extended from the guide unit 111 and may be extended to have a gentle inclination as shown in FIG. 10.
상기 안내부재(110)가 외측 용기(101)와 내측 용기(103) 사이, 즉 공간부(102)에 구비될 때, 도 6 및 도 8에 도시한 바와 같이 상기 안내부(111)의 절단된 부분은 배출구(109)에 인접하게 위치하도록 한다. 상기 안내부(111)의 절단된 부분, 외측 용기(101)의 내면 및 내측 용기(103) 외면에 의하여 냉각수가 통로(119)로 유입하는 연통로(115)가 형성된다. 상기 차단부(113)는 안내부(111)로부터 연장되어 상기 연통로(115)와 배출구(109) 사이에 위치한다. 상기 차단부(113)는 안내부(111)로부터 상부 플랜지(105)까지 연장되어 통로(119)를 차단하게 된다. 따라서 하부로부터 연통로(115)를 통하여 통로(119)로 유입된 냉각수는 통로(119)를 따라 유동하여 차단부(113)에 의하여 차단되며 배출구(109)로 배출된다.When the guide member 110 is provided between the outer container 101 and the inner container 103, that is, in the space 102, the guide member 111 is cut as shown in FIGS. 6 and 8. The portion is positioned adjacent to the outlet 109. A communication path 115 through which the coolant flows into the passage 119 is formed by the cut portion of the guide part 111, the inner surface of the outer container 101, and the outer surface of the inner container 103. The blocking part 113 extends from the guide part 111 and is located between the communication path 115 and the outlet 109. The blocking portion 113 extends from the guide portion 111 to the upper flange 105 to block the passage 119. Therefore, the cooling water introduced into the passage 119 through the communication path 115 from the bottom flows along the passage 119 to be blocked by the blocking portion 113 and is discharged to the outlet 109.
냉각수의 유동 거리를 최대로 하여 상부 플랜지(105)의 냉각 효과를 최대로 하기 위하여 상기 배출구(109)와 연통로(115)는 가능한 한 서로 인접하게 위치하도록 하는 것이 바람직하다.In order to maximize the cooling effect of the upper flange 105 by maximizing the flow distance of the coolant, the outlet 109 and the communication path 115 are preferably located as close to each other as possible.
상기 연통로(115)는 안내부(111)를 환형상으로 형성하고, 안내부(111)에 관통공을 천공하여 형성하는 것도 가능하다. 이 경우 상기 연통로(115)는 관통공에 의하여 형성된다.The communication path 115 may be formed by forming the guide portion 111 in an annular shape and drilling a through hole in the guide portion 111. In this case, the communication path 115 is formed by a through hole.
도 11은 본 발명의 다른 실시 예에 따르는 안내부재(110)를 도시한 것이다. 상기 배출구(109)가 외측 용기(101)에 2개 구비되는 경우, 양단이 서로 이격된 원호형의 안내부(111)가 2개 구비되고, 이격된 안내부(111)의 일단으로부터 연장된 차단부(113)가 2개 구비된 안내부재(110)를 구비할 수 있다. 상기에서 안내부(111)의 이격된 양단 사이와 외측 용기(101) 및 내측 용기(103)에 의하여 연통로(115)가 형성된다. 상기 연통로(115)는 배출구(109)에 인접하게 위치되도록 하며, 상기 각 차단부(113)는 서로 가까운 거리에 있는 배출구(109)와 연통로(115) 사이에 위치한다. 도 11은 2개의 배출구(109)가 외측 용기(101)에 대향 구비되는 경우에 대하여 설명하기 위하여 도시한 것으로, 2개의 연통로(115)는 180°의 각도로 구비되고, 마찬가지로 차단부(113)도 180°의 각도로 구비된다. 3개의 배출구(109)가 120°의 각도로 외측 용기(101)에 3개 구비되는 경우, 3개의 안내부(111)가 구비되고 서로 120°의 각도를 가지는 3개의 연통로(115)와, 3개의 차단부(113)가 구비된다. 도 11에서 화살표는 안내부재(110)가 공간부에 구비되는 경우 냉각수가 유동하는 경로를 도시한 것이다.11 illustrates a guide member 110 according to another embodiment of the present invention. When the discharge port 109 is provided in the outer container 101, two arc-shaped guide parts 111 are spaced apart from each other, and two ends thereof are separated from one end of the spaced guide parts 111. The guide 113 may be provided with two parts 113. In the above, the communication path 115 is formed between the spaced both ends of the guide part 111 and the outer container 101 and the inner container 103. The communication path 115 is positioned to be adjacent to the discharge port 109, and each blocking portion 113 is located between the discharge port 109 and the communication path 115 at a close distance to each other. FIG. 11 illustrates a case in which two discharge ports 109 are provided opposite to the outer container 101. The two communication paths 115 are provided at an angle of 180 ° and the blocking part 113 is likewise. ) Is also provided at an angle of 180 °. When three outlets 109 are provided in the outer container 101 at three angles of 120 °, three communication paths 115 having three guide parts 111 and having angles of 120 ° to each other, Three blocking portions 113 are provided. In FIG. 11, the arrow shows a path through which the coolant flows when the guide member 110 is provided in the space.
안내부(111)에 의하여 형성되는 상기 연통로(115)의 크기는 가능한 한 작게 하여 냉각수의 유동 거리를 크게 하는 것이 바람직하나 통로(119)로 냉각수가 원활하게 유입되도록 하기 위하여 주입구(108)의 단면적과 같은 크기를 가지도록 할 수 있다.It is preferable that the size of the communication path 115 formed by the guide part 111 is as small as possible to increase the flow distance of the coolant, but the inlet 108 is used to smoothly flow the coolant into the passage 119. It can have the same size as the cross-sectional area.
도 12 및 도 13에 도시한 바와 같이 상기 안내부(111)는 수평으로 구비될 수도 있고, 어느 일측으로 경사지게 구비되는 것도 가능하다.12 and 13, the guide 111 may be provided horizontally, or may be provided to be inclined toward any one side.
본 발명에 따르는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체(100)에서 하부 플랜지(107)에 인접하게 외측 용기(101)에 구비된 주입구(108)로 냉각수를 주입하면, 냉각수는 공간부(102)의 하부로부터 차올라 안내부재(110)의 안내부(111) 하부에 다다르면 연통로(115)를 통하여 통로(119)로 유입되며, 통로(119)를 따라 유동한 후 차단부(113)에 이르게 되고, 차단부(113)에 인접한 배출구(109)를 통하여 배출된다. 따라서, 상부 플랜지(105)의 하부 및 외부 용기(101)와 내부 용기(103)의 상부를 따라 냉각수가 유동한 후 배출되어, 상부 플랜지(105) 및 외부 용기(101)와 내부 용기(103)의 상부를 효과적으로 냉각시킬 수 있게 된다.When the coolant is injected into the injection hole 108 provided in the outer container 101 adjacent to the lower flange 107 in the vacuum chamber body 100 provided in the silicon ingot growth apparatus according to the present invention, the coolant is a space portion ( When it reaches the lower portion of the guide portion 111 of the guide member 110 from the lower portion of the 102, it is introduced into the passage 119 through the communication path 115, flows along the passage 119 and then to the blocking portion 113. This leads to discharge through the outlet 109 adjacent to the blocking portion 113. Therefore, the coolant flows along the lower part of the upper flange 105 and the upper part of the outer container 101 and the inner container 103 and then discharges, so that the upper flange 105 and the outer container 101 and the inner container 103 are discharged. It is possible to effectively cool the top of the.
상기에서 '인접' 하다는 것은 서로 간격을 가지고 가깝게 위치하는 것으로 오버랩되지 않는 범위까지 근접한 위치까지를 포함하는 의미이다.The term 'adjacent' in the above is meant to include a position close to each other to a range not overlapping with being spaced close to each other.
이상에서 도면을 참조하여 본원 발명을 설명하였으나, 본원 발명의 권리 범위는 이에 한정되는 것이 아니며, 본원 발명이 속하는 당업자에게 자명한 범위는 본원 발명의 권리에 속하는 것으로 해석하여야 할 것이다.Although the present invention has been described above with reference to the drawings, the scope of the present invention is not limited thereto, and the scope obvious to those skilled in the art to which the present invention belongs should be interpreted as belonging to the rights of the present invention.

Claims (9)

  1. 안내부재(110)를 구비하는 중공체인 하나 이상의 몸체(100)로 이루어진 진공 챔버와, 상기 진공 챔버 내측으로 구비되는 도가니와, 상기 진공 챔버 내측에서 도가니 주위로 구비되는 히터와, 상기 진공 챔버 내측에서 상기 히터 주위로 구비되는 단열재를 포함하며; 상기 몸체(100)는 양단이 밀봉되어 관체 사이에 공간부(102)가 형성된 이중 관체로서, 상기 공간부(102)로 냉각수가 주입되는 주입구(108)와 상기 주입구(108)로부터 이격되며 공간부(102)로부터 냉각수가 배출되는 배출구(109)를 구비하며; 상기 안내부재(110)는 일측으로 주입구(108)가 위치하고 타측으로 배출구(109)가 위치하도록 상기 공간부(102)에 구비되며 주입구(108)로부터 배출구(109)로 연통되는 연통로(115)를 형성하는 안내부(111)와, 상기 안내부(111)로부터 몸체(100)의 일단까지 연장되며 연통로(115)와 배출구(109) 사이에 위치하는 차단부(113)를 포함하여, 주입구(108)를 통하여 유입된 냉각수는 연통로(115)를 통하고 안내부(111)를 따라 유동하여 배출구(109)로 배출되는 것을 특징으로 하는 실리콘 잉곳 성장 장치.A vacuum chamber comprising at least one body 100 which is a hollow body having a guide member 110, a crucible provided inside the vacuum chamber, a heater provided around the crucible inside the vacuum chamber, and inside the vacuum chamber A heat insulator provided around the heater; The body 100 is a double tube body having both ends sealed and a space portion 102 formed between the tube bodies, spaced apart from the injection hole 108 and the injection hole 108 into which the coolant is injected into the space portion 102. An outlet 109 through which cooling water is discharged from 102; The guide member 110 is provided in the space portion 102 so that the injection hole 108 is located on one side and the discharge hole 109 is located on the other side, and the communication path 115 communicates with the discharge hole 109 from the injection hole 108. Including a guide portion 111 and a blocking portion 113 extending from the guide portion 111 to one end of the body 100 and positioned between the communication path 115 and the discharge port 109, Cooling water introduced through the 108 is through the communication path 115 and flows along the guide portion 111 is discharged to the silicon ingot growth apparatus, characterized in that discharged to the outlet (109).
  2. 제1 항에 있어서, 상기 몸체(100)는 환형상의 상부 플랜지(105)와, 상기 상부 플랜지(105)로부터 이격되어 구비되는 환형상의 하부 플랜지(107)와, 일단이 상기 상부 플랜지(105)에 연결되며 타단은 하부 플랜지(107)에 연결되는 관체인 외측 용기(101)와, 일단이 상기 상부 플랜지(105)에 연결되고 타단이 하부 플랜지(107)에 연결되며 외측 용기(101)의 내측으로 이격 구비되는 관체인 내측 용기(103)로 이루어지고; 상기 공간부(102)는 상기 상부 플랜지(105), 하부 플랜지(107), 내측 용기(103) 및 외측 용기(101)에 의하여 형성되며; 상기 주입구(108)와 배출구(109)는 서로 상하로 이격되어 외측 용기(101)에 구비되는 것을 특징으로 하는 실리콘 잉곳 성장 장치.According to claim 1, wherein the body 100 is an annular upper flange 105, an annular lower flange 107 provided to be spaced apart from the upper flange 105, and one end to the upper flange 105 The outer end 101 connected to the lower flange 107 and the other end connected to the upper flange 105, the other end connected to the lower flange 107, and the other end connected to the inner side of the outer container 101. It consists of the inner container 103 which is a spaced body provided; The space portion (102) is formed by the upper flange (105), the lower flange (107), the inner container (103) and the outer container (101); The inlet 108 and the outlet 109 is spaced vertically spaced apart from each other is provided in the silicon ingot growth apparatus, characterized in that provided in the outer container (101).
  3. 제2 항에 있어서, 상기 안내부(111)의 내측 가장자리는 내측 용기(103)에 연결되고 외측 가장자리는 외측 용기(101)에 연결되며, 상기 연통로(115)는 배출구(109)에 인접하여 구비되는 것을 특징으로 하는 실리콘 잉곳 성장 장치.According to claim 2, wherein the inner edge of the guide portion 111 is connected to the inner container 103 and the outer edge is connected to the outer container 101, the communication path 115 is adjacent to the outlet 109 Silicon ingot growth apparatus, characterized in that provided.
  4. 실리콘 잉곳 성장 장치에 하나 이상 구비되는 진공 챔버용 몸체에 있어서, 상기 몸체(100)는 양단이 밀봉되어 관체 사이에 공간부(102)가 형성된 이중 관체로서, 상기 공간부(102)로 냉각수가 주입되는 주입구(108)와, 상기 주입구(108)로부터 이격되며 공간부(102)로부터 냉각수가 배출되는 배출구(109)와, 상기 공간부(102)에 구비되어 냉각수를 안내하는 안내부재(110)를 포함하며; 상기 안내부재(110)는 일측으로 주입구(108)가 위치하고 타측으로 배출구(109)가 위치하도록 상기 공간부(102)에 구비되며 주입구(108)로부터 배출구(109)로 연통되는 연통로(115)를 형성하는 안내부(111)와, 상기 안내부(111)로부터 몸체(100)의 일단까지 연장되며 연통로(115)와 배출구(109) 사이에 위치하는 차단부(113)를 포함하여, 상기 주입구(108)를 통하여 유입된 냉각수는 연통로(115)를 통하고 안내부(111)를 따라 유동하여 배출구(109)로 배출되는 것을 특징으로 하는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체(100).In the vacuum chamber body is provided with at least one silicon ingot growth apparatus, the body 100 is a double tube body formed in the space portion 102 is sealed between both ends, the cooling water is injected into the space portion 102 The injection hole 108, spaced apart from the injection hole 108, a discharge port 109 through which the coolant is discharged from the space part 102, and a guide member 110 provided in the space part 102 to guide the coolant. Includes; The guide member 110 is provided in the space portion 102 so that the injection hole 108 is located on one side and the discharge hole 109 is located on the other side, and the communication path 115 communicates with the discharge hole 109 from the injection hole 108. Including a guide portion 111 and a blocking portion 113 extending from the guide portion 111 to one end of the body 100 and positioned between the communication path 115 and the outlet 109, Cooling water introduced through the inlet 108 is passed through the communication path 115 and flows along the guide portion 111 is discharged to the discharge port 109, the body for the vacuum chamber provided in the silicon ingot growth apparatus ( 100).
  5. 제4 항에 있어서, 상기 몸체(100)는 환형상의 상부 플랜지(105)와, 상기 상부 플랜지(105)로부터 이격되어 구비되는 환형상의 하부 플랜지(107)와, 일단이 상기 상부 플랜지(105)에 연결되며 타단은 하부 플랜지(107)에 연결되는 관체인 외측 용기(101)와, 일단이 상기 상부 플랜지(105)에 연결되고 타단이 하부 플랜지(107)에 연결되며 외측 용기(101)의 내측으로 이격 구비되는 관체인 내측 용기(103)로 이루어지고; 상기 공간부(102)는 상기 상부 플랜지(105), 하부 플랜지(107), 내측 용기(103) 및 외측 용기(101)에 의하여 형성되며; 상기 주입구(108)와 배출구(109)는 서로 상하로 이격되어 배출구(109)는 상부 플랜지(105)에 가깝게, 주입구(108)는 하부 플랜지(107)에 가깝게 외측 용기(101)에 구비되는 것을 특징으로 하는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체(100).5. The body 100 of claim 4, wherein the body 100 has an annular upper flange 105, an annular lower flange 107 spaced apart from the upper flange 105, and one end of the body 100. The outer end 101 connected to the lower flange 107 and the other end connected to the upper flange 105, the other end connected to the lower flange 107, and the other end connected to the inner side of the outer container 101. It consists of the inner container 103 which is a spaced body provided; The space portion (102) is formed by the upper flange (105), the lower flange (107), the inner container (103) and the outer container (101); The inlet 108 and the outlet 109 is spaced up and down each other so that the outlet 109 is close to the upper flange 105, the inlet 108 is provided in the outer container 101 close to the lower flange 107 Body for vacuum chamber provided in the silicon ingot growth apparatus characterized in that.
  6. 제5 항에 있어서, 상기 안내부(111)의 내측 가장자리는 내측 용기(103)에 연결되고 외측 가장자리는 외측 용기(101)에 연결되며, 상기 연통로(115)는 배출구(109)에 인접하여 구비되는 것을 특징으로 하는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체(100).The method of claim 5, wherein the inner edge of the guide portion 111 is connected to the inner container 103 and the outer edge is connected to the outer container 101, the communication path 115 is adjacent to the outlet 109 Body for vacuum chamber provided in the silicon ingot growth apparatus, characterized in that provided.
  7. 제5 항에 있어서, 상기 외측 용기(101)와 내측 용기(103)는 단면이 원형인 관체이고; 상기 안내부(111)는 양단이 이격된 원호형으로 내측 가장자리는 내측 용기(103)에 연결되고 외측 가장자리는 외측 용기(101)에 연결되며; 상기 연통로(115)는 안내부(111)와, 외측 용기(101)와, 내측 용기(103) 사이에 형성되는 것을 특징으로 하는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체(100).6. The outer container (101) and the inner container (103) are tubular bodies having a circular cross section; The guide portion 111 is an arc shape with both ends spaced apart and the inner edge thereof is connected to the inner container 103 and the outer edge thereof is connected to the outer container 101; The communication path (115) is a vacuum chamber body (100) provided in the silicon ingot growth apparatus, characterized in that formed between the guide portion 111, the outer container 101 and the inner container (103).
  8. 제5 항에 있어서, 상기 외측 용기(101)와 내측 용기(103)는 단면이 원형인 관체이고; 상기 안내부(111)는 내측 가장자리는 내측 용기(103)에 연결되고 외측 가장자리는 외측 용기(101)에 연결된 환형상이며; 상기 연통로(115)는 안내부(111)에 형성된 관통공인 것을 특징으로 하는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체(100).6. The outer container (101) and the inner container (103) are tubular bodies having a circular cross section; The guide portion 111 is annular with an inner edge connected to the inner container 103 and an outer edge connected to the outer container 101; The communication path 115 is a vacuum chamber body 100 provided in the silicon ingot growth apparatus, characterized in that the through hole formed in the guide portion (111).
  9. 제5 항에 있어서, 상기 외측 용기(101)와 내측 용기(103)는 단면이 원형인 관체이고 공간부(102)의 단면도 환형상으로 형성되며, 상기 주입구(108)는 공간부(102)의 접선 방향에 대하여 예각을 가지도록 구비되는 것을 특징으로 하는 실리콘 잉곳 성장 장치에 구비되는 진공 챔버용 몸체(100).6. The outer container 101 and the inner container 103 are tubular bodies having a circular cross section and are formed in a cross-sectional shape of the space portion 102, and the injection hole 108 is formed in the space portion 102. Body (100) for the vacuum chamber provided in the silicon ingot growth apparatus, characterized in that it is provided with an acute angle with respect to the tangential direction.
PCT/KR2010/004615 2009-09-28 2010-07-15 Apparatus for growing silicon ingots, and body for the vacuum chamber of the apparatus for growing silicon ingots WO2011037317A2 (en)

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KR10-2009-0091493 2009-09-28

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