WO2011033980A1 - Magnetic sensor and production method therefor - Google Patents

Magnetic sensor and production method therefor Download PDF

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WO2011033980A1
WO2011033980A1 PCT/JP2010/065476 JP2010065476W WO2011033980A1 WO 2011033980 A1 WO2011033980 A1 WO 2011033980A1 JP 2010065476 W JP2010065476 W JP 2010065476W WO 2011033980 A1 WO2011033980 A1 WO 2011033980A1
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magnetic
layer
magnetic layer
pattern portion
conductive layer
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武也 猪俣
一郎 徳永
昌廣 川村
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アルプス電気株式会社
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

Disclosed is a magnetic sensor that is capable of adjusting the fixed magnetization direction of each magnetic detection element on the same substrate with a high degree of accuracy by changing the method for controlling fixed magnetization, and is also capable of controlling the same in a weak magnetic field. An electrically conducting layer (6) is formed upon the substrate, and at this time, a plurality of pattern sections are formed with differing orientations, through which a current is run when applied to the electrically conducting layer. A first magnetic layer (13a) is formed upon each pattern section, and the first magnetic layer is formed while applying an external magnetic field, which is generated by running a current in the electrically conducting layer (6), to the first magnetic layer. A second magnetic layer (13c) is formed upon the first magnetic layer (13a) via a nonmagnetic intermediate layer (13b), and at this time, the aforementioned second magnetic layer is formed while applying an external magnetic field, which is generated by running a current in the electrically conducting layer (6), to the aforementioned first magnetic layer (13a). An RKKY coupling magnetic field is generated via the nonmagnetic intermediate layer between the first magnetic layer and the second magnetic layer, and the fixed magnetization direction of the first magnetic layer and the second magnetic layer can be controlled in an anti-parallel state.

Description

磁気センサ及びその製造方法Magnetic sensor and manufacturing method thereof
　本発明は、磁化固定方向が異なる複数の磁気検出素子を備える磁気センサ及びその製造方法に関する。 The present invention relates to a magnetic sensor including a plurality of magnetic detection elements having different magnetization fixed directions, and a manufacturing method thereof.
　従来、ポテンショメータ等に使用される磁気センサは、支持板上に、磁化固定方向（ＰＩＮ方向）が異なる磁気検出素子を備える複数のチップが搭載された構成となっている。 Conventionally, a magnetic sensor used for a potentiometer or the like has a configuration in which a plurality of chips including magnetic detection elements having different magnetization fixed directions (PIN directions) are mounted on a support plate.
　検出磁界が作用すると、磁気検出素子を構成するフリー磁性層の磁化方向が変動し、固定磁性層の前記磁化固定方向との角度差で抵抗値が変化し、その抵抗変化に基づく出力により回転角度等の検知を行うことが可能となっている。 When the detection magnetic field acts, the magnetization direction of the free magnetic layer constituting the magnetic detection element fluctuates, the resistance value changes due to the angle difference from the magnetization fixed direction of the pinned magnetic layer, and the rotation angle depends on the output based on the resistance change. Etc. can be detected.
　従来では、磁気検出素子の磁化固定を、反強磁性層と軟磁性層との反強磁性結合及び、軟磁性層間での積層フェリ結合で制御していた。 Conventionally, the magnetization fixing of the magnetic detection element has been controlled by the antiferromagnetic coupling between the antiferromagnetic layer and the soft magnetic layer and the laminated ferrimagnetic coupling between the soft magnetic layers.
　従来の磁気センサの製造方法を説明すると、まず、ウエハ状の大基板上に多数の磁気検出素子を成膜し、ウエハ面内に配置している多数の前記磁気検出素子に対して同一磁場方向での磁場中熱処理を施した。このため、各磁気検出素子の固定磁性層の磁化固定方向（ＰＩＮ方向）は全て同一方向となった。続いて、各磁気検出素子ごとに前記大基板を切り出して多数のチップを形成した。続いて、複数のチップを共通の支持板上に搭載するが、このとき、機械的に、各チップの支持板に対するマウント角度を変えることで、各磁気検出素子の磁化固定方向を異なる方向に調整していた。 A conventional magnetic sensor manufacturing method will be described. First, a large number of magnetic detection elements are formed on a large wafer-shaped substrate, and the same magnetic field direction is applied to the large number of magnetic detection elements arranged on the wafer surface. Heat treatment was performed in a magnetic field. For this reason, the magnetization fixed direction (PIN direction) of the fixed magnetic layer of each magnetic detection element is all the same direction. Subsequently, the large substrate was cut out for each magnetic detection element to form a large number of chips. Subsequently, multiple chips are mounted on a common support plate. At this time, the magnetization fixing direction of each magnetic detection element is adjusted in a different direction by mechanically changing the mounting angle of each chip with respect to the support plate. Was.
特表平１１－５０５９３１号公報Japanese National Patent Publication No. 11-505931 特開２００２－２９９７２８号公報JP 2002-299728 A
　しかしながら従来での磁化固定の制御方法は、高温での相変態で反強磁性結合させる反強磁性層を用いるものであり、かかる制御方法では、高温（数百℃）で且つ強磁場（数ｋＯｅ～数十ｋＯｅ）を必要とした。 However, the conventional magnetization fixing control method uses an antiferromagnetic layer that is antiferromagnetically coupled by phase transformation at a high temperature. In such a control method, a high magnetic field (several kOe) at a high temperature (several hundred degrees Celsius) is used. ~ Tens of kOe).
　このため従来では、同一基板上に、磁化固定方向が異なる複数の磁気検出素子を形成することは出来なかった。 For this reason, conventionally, it was not possible to form a plurality of magnetic detection elements having different magnetization fixed directions on the same substrate.
　そこで従来では、高温且つ強磁場の磁場中熱処理により磁化固定方向が全て同一とされた多数の磁気検出素子をチップ化し、複数のチップを共通の支持板上に搭載する際、マウント角度を異ならせることで、共通の支持板上に搭載する各磁気検出素子の磁化固定方向を異ならせていた。 Therefore, conventionally, a large number of magnetic detection elements whose magnetization fixing directions are all the same by heat treatment in a magnetic field of high temperature and strong magnetic field are made into chips, and when mounting a plurality of chips on a common support plate, the mount angles are made different. Thus, the magnetization fixed directions of the magnetic detection elements mounted on the common support plate are different.
　しかしながら、各磁気検出素子の磁化固定方向を機械的なマウント角度の調整により制御する従来の制御方法では、マウント角度のばらつきにより、各磁気検出素子の磁化固定方向が所定方向からずれやすく、磁気センサの角度検出精度が低下する問題があった。また従来では、ダイボンダーを用いて機械的なマウント角度の調整及びダイボンド工程を必要とし、生産コストが上昇しまた煩雑な製造工程が必要となった。 However, in the conventional control method in which the magnetization fixed direction of each magnetic detection element is controlled by adjusting the mechanical mount angle, the magnetization fixed direction of each magnetic detection element is likely to deviate from a predetermined direction due to variations in the mount angle. There has been a problem that the angle detection accuracy of the lowering. Further, conventionally, a mechanical mounting angle adjustment and a die bonding step using a die bonder are required, resulting in an increase in production cost and a complicated manufacturing step.
　特許文献１には、磁気検出素子の上方に導体経路を位置させたセンサ素子の発明が開示されている。特許文献１では、前記導体経路に電流を流し、そのときに生じる磁界によりバイアス層部を磁化する。 Patent Document 1 discloses an invention of a sensor element in which a conductor path is positioned above a magnetic detection element. In Patent Document 1, a current is passed through the conductor path, and the bias layer portion is magnetized by a magnetic field generated at that time.
　しかしながら特許文献１に記載された発明では、個別のウエハに導体経路とセンサ素子を形成し、近接させる方法をとっている為、センサ素子に対する導体経路の位置決めが必要となり、結局、各センサ素子の磁化固定方向を高精度に制御することができない。 However, in the invention described in Patent Document 1, since the conductor path and the sensor element are formed on individual wafers and brought close to each other, it is necessary to position the conductor path with respect to the sensor element. The magnetization fixed direction cannot be controlled with high accuracy.
　特許文献２に記載された発明は、反強磁性層を備え、固定磁性層との間で高温の磁場中熱処理を施すものであり、上記した従来課題を解決できていない（特許文献２の［００２６］欄参照）。更に、特許文献２に記載された発明では、磁場印加用磁性層の残留磁化を用いて複数のトンネル型磁気抵抗効果素子の固定磁性層の磁化を異なる方向に固定するものであるが、残留磁化を用いる方法では、各磁化固定方向を高精度に制御することが困難であり、ばらつきが生じやすい。また交換結合磁界を生じさせるために非常に強い磁場を必要とする。 The invention described in Patent Document 2 includes an antiferromagnetic layer and performs heat treatment in a high-temperature magnetic field between the pinned magnetic layer and cannot solve the above-described conventional problems ([Patent Document 2 [[ [0026] column). Furthermore, in the invention described in Patent Document 2, the magnetization of the pinned magnetic layers of a plurality of tunnel type magnetoresistive effect elements is pinned in different directions using the remanent magnetization of the magnetic layer for applying a magnetic field. In the method using, it is difficult to control each magnetization fixed direction with high accuracy, and variations tend to occur. In addition, a very strong magnetic field is required to generate an exchange coupling magnetic field.
　そこで本発明は、上記従来の課題を解決するためのものであり、同一基板上で、複数の磁気検出素子を、弱磁場を用いて異なる磁化固定方向に高精度に制御できる磁気センサ及びその製造方法を提供することを目的とする。 Therefore, the present invention is to solve the above-described conventional problems, and a magnetic sensor capable of controlling a plurality of magnetic detection elements on a same substrate in different magnetization fixed directions with high accuracy using a weak magnetic field, and its manufacture It aims to provide a method.
　本発明は、検出磁界を生じる磁界発生手段と、非接触に設けられた、前記検出磁界を検知する磁気検出素子を備えた磁気センサにおいて、
　複数の前記磁気検出素子が同一の基板上に形成され、
　各磁気検出素子は、下から、磁化方向が固定される固定磁性層、非磁性材料層及び、前記検出磁界に対して磁化方向が変動するフリー磁性層の順に積層された積層部分を有し、
　各固定磁性層は、下から第１磁性層、非磁性中間層、第２磁性層の順に積層され、前記第１磁性層と前記第２磁性層の磁化固定方向が反平行である積層フェリ構造であり、
　各固定磁性層と前記基板との間には、通電により生じた外部磁場を前記第１磁性層及び前記第２磁性層の成膜時に印加するための導電層が形成されている。 The present invention provides a magnetic sensor comprising a magnetic field generating means for generating a detection magnetic field and a magnetic detection element provided in a non-contact manner for detecting the detection magnetic field.
A plurality of the magnetic sensing elements are formed on the same substrate;
Each magnetic detection element has, from below, a laminated portion in which a pinned magnetic layer whose magnetization direction is fixed, a nonmagnetic material layer, and a free magnetic layer whose magnetization direction varies with respect to the detection magnetic field, are laminated in this order.
Each pinned magnetic layer is laminated in order of the first magnetic layer, the nonmagnetic intermediate layer, and the second magnetic layer from the bottom, and the laminated ferrimagnetic structure in which the magnetization pinned directions of the first magnetic layer and the second magnetic layer are antiparallel. And
Between each pinned magnetic layer and the substrate, a conductive layer for applying an external magnetic field generated by energization when forming the first magnetic layer and the second magnetic layer is formed.
　そして、前記導電層には、通電時に電流の流れる方向が異なる複数のパターン部が形成されており、各磁気検出素子は、各パターン部に対向して形成されて、２つ以上の各磁気検出素子の各第１磁性層の磁化固定方向が異なる方向に制御されていることを特徴とするものである。 The conductive layer is formed with a plurality of pattern portions having different directions of current flow when energized, and each magnetic detection element is formed to face each pattern portion, so that two or more magnetic detection elements are formed. The magnetization fixed direction of each first magnetic layer of the element is controlled in a different direction.
　本発明では、基板表面内にて直交する方向をＸ１－Ｘ２方向とＹ１－Ｙ２方向としたとき、
　前記導電層には、通電時に電流の流れる方向がＹ１方向の第１パターン部、電流の流れる方向がＸ１方向の第２パターン部、電流の流れる方向がＹ２方向の第３パターン部、電流の流れる方向がＸ２方向の第４パターン部が夫々形成されており、
　各磁気検出素子が、前記第１パターン部、前記第２パターン部、前記第３パターン部及び前記第４パターン部に夫々、対向して形成されて、各磁気検出素子の第１磁性層の磁化固定方向が９０度ずつ異なる方向に制御されていることが好ましい。例えば本発明の磁気センサをポテンショメータに搭載できる。 In the present invention, when the orthogonal directions in the substrate surface are the X1-X2 direction and the Y1-Y2 direction,
The conductive layer has a first pattern portion in which the current flows in the Y1 direction when energized, a second pattern portion in which the current flows in the X1 direction, a third pattern portion in which the current flows in the Y2 direction, and a current flows in the conductive layer. A fourth pattern portion whose direction is the X2 direction is formed respectively.
Each magnetic detection element is formed to face the first pattern portion, the second pattern portion, the third pattern portion, and the fourth pattern portion, respectively, and the magnetization of the first magnetic layer of each magnetic detection element It is preferable that the fixing direction is controlled in different directions by 90 degrees. For example, the magnetic sensor of the present invention can be mounted on a potentiometer.
　また本発明では、前記第１磁性層及び前記第２磁性層はＣｏを含む磁性材料で形成され、前記非磁性中間層は、Ｒｕ、Ｒｈ、Ｉｒ、Ｃｒ、Ｒｅ、Ｃｕのうち少なくともいずれか１種で形成されることが好適である。前記非磁性中間層の膜厚は、２Å～１０Åの範囲内であることが好ましい。これにより、第１磁性層と第２磁性層間の非磁性中間層を介して生じるＲＫＫＹ結合磁界を大きくでき、第１磁性層と第２磁性層の磁化固定方向を安定して反平行状態に制御できる。 In the present invention, the first magnetic layer and the second magnetic layer are made of a magnetic material containing Co, and the nonmagnetic intermediate layer is at least one of Ru, Rh, Ir, Cr, Re, and Cu. It is preferred that the seed is formed. The film thickness of the nonmagnetic intermediate layer is preferably in the range of 2 to 10 mm. As a result, the RKKY coupling magnetic field generated via the nonmagnetic intermediate layer between the first magnetic layer and the second magnetic layer can be increased, and the magnetization fixed directions of the first magnetic layer and the second magnetic layer can be stably controlled to be antiparallel. it can.
　また本発明は、検出磁界を生じる磁界発生手段と非接触に設けられ、前記検出磁界を検知する磁気検出素子を備えた磁気センサの製造方法において、
　基板上に導電層を形成し、このとき、前記導電層への通電時に前記電流の流れる方向が異なる複数のパターン部を形成する工程、
　各パターン部上に第１磁性層を成膜し、このとき、前記導電層に電流を流して生じる外部磁場を前記第１磁性層に印加しながら前記第１磁性層を成膜する工程、
　前記第１磁性層上に非磁性中間層を介して第２磁性層を成膜して、前記第１磁性層、前記非磁性中間層及び前記第２磁性層の積層フェリ構造から成る固定磁性層を形成し、このとき、前記導電層に電流を流して生じる外部磁場を前記第１磁性層に印加しながら前記第２磁性層を成膜する工程、
　前記第２磁性層上に非磁性材料層及びフリー磁性層を成膜して、前記固定磁性層、前記非磁性材料層及び前記フリー磁性層の積層構造を有し、第１磁性層の磁化固定方向が異なる複数の前記磁気検出素子を形成する工程、
　を有することを特徴とするものである。 According to another aspect of the present invention, there is provided a magnetic sensor manufacturing method including a magnetic detection element that is provided in a non-contact manner with a magnetic field generation unit that generates a detection magnetic field and detects the detection magnetic field.
Forming a conductive layer on the substrate, and at this time, forming a plurality of pattern portions in which the current flows in different directions when the conductive layer is energized;
Forming a first magnetic layer on each pattern portion, and forming the first magnetic layer while applying an external magnetic field generated by passing a current through the conductive layer to the first magnetic layer;
A pinned magnetic layer comprising a laminated ferrimagnetic structure of the first magnetic layer, the nonmagnetic intermediate layer, and the second magnetic layer, wherein a second magnetic layer is formed on the first magnetic layer via a nonmagnetic intermediate layer. Forming the second magnetic layer while applying an external magnetic field generated by passing a current through the conductive layer to the first magnetic layer,
A nonmagnetic material layer and a free magnetic layer are formed on the second magnetic layer to have a laminated structure of the pinned magnetic layer, the nonmagnetic material layer, and the free magnetic layer, and the magnetization of the first magnetic layer is fixed. Forming a plurality of the magnetic sensing elements having different directions;
It is characterized by having.
　本発明では、前記導電層上の全面に、前記積層フェリ構造の固定磁性層を成膜し、このとき、第１磁性層及び第２磁性層を前記導電層に電流を流しながら成膜し、更に前記固定磁性層上に非磁性材料層及びフリー磁性層を成膜して前記積層構造を形成し、
　前記導電層の各パターン部との対向位置に前記積層構造を残して、第１磁性層の磁化固定方向が異なる複数の前記磁気検出素子をパターン形成することが好ましい。 In the present invention, the pinned magnetic layer having the laminated ferri structure is formed on the entire surface of the conductive layer, and at this time, the first magnetic layer and the second magnetic layer are formed while passing a current through the conductive layer, Further, a nonmagnetic material layer and a free magnetic layer are formed on the pinned magnetic layer to form the laminated structure,
It is preferable that the plurality of magnetic sensing elements having different magnetization fixed directions of the first magnetic layer are pattern-formed while leaving the stacked structure at positions facing the pattern portions of the conductive layer.
　また本発明では、基板表面内にて直交する方向をＸ１－Ｘ２方向とＹ１－Ｙ２方向としたとき、
　前記導電層には、電流の流れる方向がＹ１方向の第１パターン部、電流の流れる方向がＸ１方向の第２パターン部、電流の流れる方向がＹ２方向の第３パターン部、電流の流れる方向がＸ２方向の第４パターン部を夫々形成し、
　各磁気検出素子を、前記第１パターン部、前記第２パターン部、前記第３パターン部及び前記第４パターン部と対向する位置に夫々、形成して、各磁気検出素子の第１磁性層の磁化固定方向を９０度ずつ異なる方向に制御することが好ましい。 In the present invention, when the directions perpendicular to the substrate surface are the X1-X2 direction and the Y1-Y2 direction,
The conductive layer has a first pattern portion in which the current flows in the Y1 direction, a second pattern portion in which the current flows in the X1 direction, a third pattern portion in which the current flows in the Y2 direction, and a current flow direction in the Y1 direction. Forming a fourth pattern portion in the X2 direction,
Each magnetic detection element is formed at a position facing the first pattern portion, the second pattern portion, the third pattern portion, and the fourth pattern portion, respectively, and the first magnetic layer of each magnetic detection element is formed. It is preferable to control the magnetization fixed direction in different directions by 90 degrees.
　また本発明では、前記第１磁性層及び前記第２磁性層をＣｏを含む磁性材料で形成し、前記非磁性中間層を、Ｒｕ、Ｒｈ、Ｉｒ、Ｃｒ、Ｒｅ、Ｃｕのうち少なくともいずれか１種で形成することが好ましい。また、前記非磁性中間層の膜厚を、２Å～１０Åの範囲内で形成することが好ましい。これにより、第１磁性層と第２磁性層間の非磁性中間層を介して生じるＲＫＫＹ結合磁界を大きくでき、第１磁性層と第２磁性層を安定して反平行状態に磁化固定できる。 In the present invention, the first magnetic layer and the second magnetic layer are formed of a magnetic material containing Co, and the nonmagnetic intermediate layer is at least one of Ru, Rh, Ir, Cr, Re, and Cu. It is preferable to form with seeds. Further, it is preferable that the film thickness of the nonmagnetic intermediate layer is in the range of 2 to 10 mm. Thereby, the RKKY coupling magnetic field generated via the nonmagnetic intermediate layer between the first magnetic layer and the second magnetic layer can be increased, and the first magnetic layer and the second magnetic layer can be stably fixed in the antiparallel state.
　また本発明では、大基板に区切られた各領域上を通るように前記導電層を形成し、前記導電層上に多数の磁気検出素子を形成し、大基板を各領域ごとに切断して個々に分離することで、多数の磁気センサを簡単に製造することが出来、また従来のようにダイシング後に、複数のチップを共通の支持板上にマウントしダイボンドする工程が必要なく製造時間を大幅に短縮することが可能である。 In the present invention, the conductive layer is formed so as to pass over each region partitioned by the large substrate, a large number of magnetic detection elements are formed on the conductive layer, and the large substrate is cut into each region individually. In this way, a large number of magnetic sensors can be easily manufactured, and after dicing as in the past, multiple chips are mounted on a common support plate and die bonding is not required, greatly increasing manufacturing time. It can be shortened.
　本発明における磁気センサは、各固定磁性層と基板との間に導電層が形成されており、また前記固定磁性層が第１磁性層／非磁性中間層／第２磁性層の積層フェリ構造で形成されている。そして、前記導電層には、第１磁性層及び第２磁性層の成膜時に通電され、前記第１磁性層に前記通電により生じた外部磁場が印加される。 In the magnetic sensor of the present invention, a conductive layer is formed between each pinned magnetic layer and the substrate, and the pinned magnetic layer has a laminated ferrimagnetic structure of a first magnetic layer / nonmagnetic intermediate layer / second magnetic layer. Is formed. The conductive layer is energized when the first magnetic layer and the second magnetic layer are formed, and an external magnetic field generated by the energization is applied to the first magnetic layer.
　このように本発明は反強磁性層を用いず、導電層に重ねて、積層フェリ構造の固定磁性層を形成する形態とし、しかも第１磁性層及び第２磁性層の成膜時に、導電層に通電して、第１磁性層に外部磁場を印加し続けている。第１磁性層は外部磁場の方向に磁化固定され、一方、第２磁性層はＲＫＫＹ結合磁界により第１磁性層とは反平行に磁化固定される。 Thus, the present invention does not use an antiferromagnetic layer, but forms a pinned magnetic layer having a laminated ferrimagnetic structure over the conductive layer, and the conductive layer is formed during the formation of the first magnetic layer and the second magnetic layer. And an external magnetic field is continuously applied to the first magnetic layer. The first magnetic layer is magnetization fixed in the direction of the external magnetic field, while the second magnetic layer is magnetization fixed antiparallel to the first magnetic layer by the RKKY coupling magnetic field.
　本発明では、複数の磁気検出素子を形成する基板上に、予め、通電方向が異なる複数のパターン部を備えた前記導電層を形成し、各パターン部に各磁気検出素子を対向配置させている。これにより、前記導電層に通電することで、各パターン部から各磁気検出素子の第１磁性層に異なる方向の外部磁場を印加でき、したがって１チップ構成で、磁化固定方向が異なる複数の磁気検出素子を備えた磁気センサを形成することが可能になる。 In the present invention, the conductive layer having a plurality of pattern portions having different energization directions is formed in advance on a substrate on which a plurality of magnetic detection elements are formed, and the magnetic detection elements are arranged to face each pattern portion. . Thus, by applying current to the conductive layer, an external magnetic field in a different direction can be applied from each pattern portion to the first magnetic layer of each magnetic detection element. Therefore, a plurality of magnetic detections having different magnetization fixed directions in a single chip configuration. It becomes possible to form a magnetic sensor provided with an element.
　本発明では、上記した磁化固定の制御方法を採用することで、第１磁性層に磁気飽和する程度の弱磁場を作用させ、第１磁性層の磁化を外部磁場の方向に保持したうえで、第２磁性層まで成膜し、これにより、第１磁性層と第２磁性層との間に適切にＲＫＫＹ結合磁界を生じさせ、第１磁性層と第２磁性層とを強固に反平行に磁化固定できる。 In the present invention, by adopting the above-described magnetization fixing control method, a weak magnetic field that causes magnetic saturation is applied to the first magnetic layer, and the magnetization of the first magnetic layer is maintained in the direction of the external magnetic field. The film is formed up to the second magnetic layer, whereby an RKKY coupling magnetic field is appropriately generated between the first magnetic layer and the second magnetic layer, and the first magnetic layer and the second magnetic layer are strongly anti-parallel. Magnetization can be fixed.
　更に本発明では、各磁気検出素子の形成と同じ基板上に通電時に電流の流れる方向が異なる複数のパターン部を備える前記導電層を形成し、このとき、前記導電層を薄膜技術及びフォトリソグラフィ技術等の微細加工技術を用いて形成できるので、前記の各パターン部を高精度に形成できる。そして、各パターン部に各磁気検出素子を対向配置し、上記した磁化固定の制御方法を用いて各パターン部から各磁気検出素子の第１磁性層に弱磁場の外部磁場を印加した際、各第１磁性層に対する磁場印加方向を高精度に制御でき且つ、異なる方向の外部磁場間での磁場干渉を小さくでき、したがって、同一基板上で各磁気検出素子の磁化固定方向を高精度に制御できる。 Furthermore, in the present invention, the conductive layer including a plurality of pattern portions having different current flow directions when energized is formed on the same substrate as that of each magnetic detection element. At this time, the conductive layer is formed by a thin film technique and a photolithography technique. Therefore, the pattern portions can be formed with high accuracy. Then, when each magnetic detection element is arranged opposite to each pattern portion, and an external magnetic field of weak magnetic field is applied from each pattern portion to the first magnetic layer of each magnetic detection element using the above-described magnetization fixed control method, The magnetic field application direction with respect to the first magnetic layer can be controlled with high accuracy, and magnetic field interference between external magnetic fields in different directions can be reduced. Therefore, the magnetization fixed direction of each magnetic detection element can be controlled with high accuracy on the same substrate. .
　以上により本発明では、導電層及び積層フェリ構造を備える複数の磁気検出素子を同一基板上に弱磁場にて異なる磁化固定方向に高精度に制御でき、検出精度に優れた１チップ構成の磁気センサを形成することができる。１チップ構成にできることで、磁気センサの小型化を促進できる。 As described above, according to the present invention, a plurality of magnetic detection elements having a conductive layer and a laminated ferrimagnetic structure can be controlled with high accuracy in different magnetization fixed directions in a weak magnetic field on the same substrate, and a single-chip magnetic sensor excellent in detection accuracy. Can be formed. The one-chip configuration can facilitate downsizing of the magnetic sensor.
　本発明の磁気センサ及びその製造方法によれば、同一基板上で、複数の磁気検出素子を、弱磁場を用いて異なる磁化固定方向に高精度に制御できる。 According to the magnetic sensor and the manufacturing method thereof of the present invention, a plurality of magnetic detection elements can be controlled with high accuracy in different magnetization fixed directions using a weak magnetic field on the same substrate.
本実施形態における磁気センサの部分平面図、The partial top view of the magnetic sensor in this embodiment, 図１のＡ－Ａ線から切断し矢印方向から見た磁気センサの部分拡大縦断面図、FIG. 1 is a partially enlarged longitudinal sectional view of a magnetic sensor taken along line AA in FIG. 本実施形態の磁気センサの製造方法を示す工程図（縦断面の模式図）、Process drawing (schematic diagram of longitudinal section) showing a method for manufacturing the magnetic sensor of the present embodiment, 磁気センサの製造工程を示す平面図、Plan view showing the manufacturing process of the magnetic sensor, 多数の磁気センサを製造するためのウエハ状の大基板を示す平面図。The top view which shows the wafer-like large board | substrate for manufacturing many magnetic sensors.
　図１は本実施形態における磁気センサ１の部分平面図を示す（ただし導電層と各磁気検出素子間に形成される絶縁層を省略した）。図２は図１に示すＡ－Ａ線から切断し矢印方向から見た磁気センサの部分拡大縦断面図を示す。 FIG. 1 shows a partial plan view of a magnetic sensor 1 in this embodiment (however, an insulating layer formed between a conductive layer and each magnetic detection element is omitted). FIG. 2 is a partially enlarged longitudinal sectional view of the magnetic sensor taken along the line AA shown in FIG. 1 and viewed from the arrow direction.
　図１に示す磁気センサ１は、１チップ構成であり、同一の基板１０上に４個の磁気検出素子２～５が成膜されている。 The magnetic sensor 1 shown in FIG. 1 has a one-chip configuration, and four magnetic detection elements 2 to 5 are formed on the same substrate 10.
　図１に示すように、各磁気検出素子２～５の下方には導電層（コイル層）６が形成されている。 As shown in FIG. 1, a conductive layer (coil layer) 6 is formed below each magnetic detection element 2-5.
　図１に示すように導電層６は、基板１０の表面で屈曲したパターン形状を備え、Ｘ１－Ｘ２方向及びＹ１－Ｙ２方向に延びる複数のパターン部が連結した形状となっている。なお、Ｘ１－Ｘ２方向及びＹ１－Ｙ２方向は基板表面内にて直交する２方向を指す。 As shown in FIG. 1, the conductive layer 6 has a pattern shape which is bent on the surface of the substrate 10, and has a shape in which a plurality of pattern portions extending in the X1-X2 direction and the Y1-Y2 direction are connected. Note that the X1-X2 direction and the Y1-Y2 direction indicate two directions orthogonal to each other within the substrate surface.
　電流Ｉが導電層６内に図１に示す矢印方向から流れたとすると、導電層６の第１パターン部６ａには電流ＩがＹ１方向に流れ、導電層６の第２パターン部６ｂには電流ＩがＸ１方向に流れ、導電層６の第３パターン部６ｃには電流ＩがＹ２方向に流れ、導電層６の第４パターン部６ｄには電流ＩがＸ２方向に流れる。 If the current I flows in the conductive layer 6 from the direction of the arrow shown in FIG. 1, the current I flows in the first pattern portion 6a of the conductive layer 6 in the Y1 direction, and the current I flows in the second pattern portion 6b of the conductive layer 6. I flows in the X1 direction, the current I flows in the Y2 direction in the third pattern portion 6c of the conductive layer 6, and the current I flows in the X2 direction in the fourth pattern portion 6d of the conductive layer 6.
　そして図１に示すように、第１磁気検出素子２は、第１パターン部６ａの上方に重ねて成膜され、第２磁気検出素子３は、第２パターン部６ｂの上方に重ねて形成され、第３磁気検出素子４は第３パターン部６ｃの上方に重ねて形成され、第４磁気検出素子５は第４パターン部６ｄの上方に重ねて形成されている。 As shown in FIG. 1, the first magnetic detection element 2 is formed so as to overlap above the first pattern portion 6a, and the second magnetic detection element 3 is formed so as to overlap above the second pattern portion 6b. The third magnetic detection element 4 is formed over the third pattern portion 6c, and the fourth magnetic detection element 5 is formed over the fourth pattern portion 6d.
　図２に示すように本実施形態における磁気検出素子２～５は、下から固定磁性層１３、非磁性材料層１４、フリー磁性層１５の順に積層された積層部分を備える。なお図２は、図１に示す第３磁気検出素子４の部分（Ａ－Ａ線の部分）の縦断面図を示しているが、第３磁気検出素子４以外の磁気検出素子２，３，５についても同様の積層構造で形成されている。 As shown in FIG. 2, the magnetic detection elements 2 to 5 in the present embodiment include a laminated portion in which a pinned magnetic layer 13, a nonmagnetic material layer 14, and a free magnetic layer 15 are laminated in this order from the bottom. 2 shows a longitudinal sectional view of the portion of the third magnetic detection element 4 (the portion along the line AA) shown in FIG. 1, but the magnetic detection elements 2, 3, and 3 other than the third magnetic detection element 4 are shown. 5 is formed in the same laminated structure.
　図２に示すように、導電層６上から基板１０上にかけて、Ａｌ2Ｏ3やＳｉＯ2等の絶縁材料から成る絶縁層１１が形成されている。 As shown in FIG. 2, an insulating layer 11 made of an insulating material such as Al 2 O 3 or SiO 2 is formed from the conductive layer 6 to the substrate 10.
　そして図２に示すように、導電層６上に前記絶縁層１１を介して磁気検出素子４が成膜されている。 As shown in FIG. 2, the magnetic detection element 4 is formed on the conductive layer 6 via the insulating layer 11.
　磁気検出素子４は下からシード層１２、固定磁性層１３、非磁性材料層１４、フリー磁性層１５及び保護層１６の順に積層されている。 The magnetic detecting element 4 is laminated in order of a seed layer 12, a pinned magnetic layer 13, a nonmagnetic material layer 14, a free magnetic layer 15, and a protective layer 16.
　基板１０は例えばシリコンであり、表面に熱酸化シリコン層が形成されている。
　シード層１２は、Ｎｉ－Ｆｅ－ＣｒまたはＣｒ、あるいはＲｕ等によって形成される。またシード層１２と絶縁層１１との間にＴａ等の非磁性元素で形成された下地層（図示しない）が形成されてもよい。 The substrate 10 is, for example, silicon, and a thermally oxidized silicon layer is formed on the surface.
The seed layer 12 is formed of Ni—Fe—Cr or Cr, Ru, or the like. An underlayer (not shown) made of a nonmagnetic element such as Ta may be formed between the seed layer 12 and the insulating layer 11.
　図２に示すようにシード層１２上に固定磁性層１３が形成される。すなわち本実施形態ではシード層１２と固定磁性層１３との間に反強磁性層が形成されていない。 As shown in FIG. 2, the pinned magnetic layer 13 is formed on the seed layer 12. That is, in this embodiment, no antiferromagnetic layer is formed between the seed layer 12 and the pinned magnetic layer 13.
　図２に示すように、固定磁性層１３は、下から第１磁性層１３ａ、非磁性中間層１３ｂ、第２磁性層１３ｃの順で積層された積層フェリ構造である。非磁性中間層１３ｂを介したＲＫＫＹ結合磁界により前記第１磁性層１３ａと第２磁性層１３ｃの磁化固定方向は互いに反平行状態にされる。図３に示すように、第３磁気検出素子４における第１磁性層１３ａの磁化固定方向Ｍ１はＸ２方向であり、第２磁性層１３ｃの磁化固定方向Ｍ２はＸ１方向である。 As shown in FIG. 2, the pinned magnetic layer 13 has a laminated ferrimagnetic structure in which a first magnetic layer 13a, a nonmagnetic intermediate layer 13b, and a second magnetic layer 13c are laminated in this order from the bottom. Due to the RKKY coupling magnetic field via the nonmagnetic intermediate layer 13b, the magnetization fixed directions of the first magnetic layer 13a and the second magnetic layer 13c are made antiparallel to each other. As shown in FIG. 3, the magnetization fixed direction M1 of the first magnetic layer 13a in the third magnetic detection element 4 is the X2 direction, and the magnetization fixed direction M2 of the second magnetic layer 13c is the X1 direction.
　第１磁性層１３ａ及び第２磁性層１３ｃは、共に、Ｃｏ－Ｆｅ，Ｎｉ－Ｆｅ，Ｃｏ－Ｆｅ－Ｎｉ，Ｃｏなどの磁性材料で形成されるが、Ｃｏを含む磁性材料（Ｃｏ－Ｆｅ等）であることが好適である。また非磁性中間層１３ｂは、Ｒｕ、Ｒｈ、Ｉｒ、Ｃｒ、Ｒｅ、Ｃｕなどの非磁性導電材料で形成されるが特にＲｕで形成されることが好適である。一例を示すと固定磁性層１３は、第１磁性層１３ａ；Ｃｏ－Ｆｅ／非磁性中間層１３ｂ；Ｒｕ／第２磁性層１３ｃ；Ｃｏ－Ｆｅの積層フェリ構造である。 The first magnetic layer 13a and the second magnetic layer 13c are both formed of a magnetic material such as Co—Fe, Ni—Fe, Co—Fe—Ni, or Co, but a magnetic material containing Co (such as Co—Fe). ) Is preferred. The nonmagnetic intermediate layer 13b is made of a nonmagnetic conductive material such as Ru, Rh, Ir, Cr, Re, or Cu, but is preferably made of Ru. For example, the pinned magnetic layer 13 has a laminated ferrimagnetic structure of a first magnetic layer 13a; Co—Fe / nonmagnetic intermediate layer 13b; Ru / second magnetic layer 13c; Co—Fe.
　また、第１磁性層１３ａ及び第２磁性層１３ｃは、夫々、１０Å～２０Å程度の膜厚で形成され、非磁性中間層１３ｂは２Å～１０Å程度の膜厚で形成される。また第１磁性層１３ａと第２磁性層１３ｃのＭｓ・ｔ（Ｍｓは飽和磁化、ｔは膜厚）は特に規定しないが、ほぼ同等となるように調整することで、耐熱、耐外部磁場性に優れ、リニアリティ精度の高い磁気センサを得ることが出来る。 The first magnetic layer 13a and the second magnetic layer 13c are each formed with a thickness of about 10 to 20 mm, and the nonmagnetic intermediate layer 13b is formed with a thickness of about 2 to 10 mm. Further, Ms · t (Ms is saturation magnetization, t is film thickness) of the first magnetic layer 13a and the second magnetic layer 13c is not particularly defined, but by adjusting them to be approximately equal, heat resistance and external magnetic field resistance are improved. And a magnetic sensor with high linearity accuracy can be obtained.
　前記固定磁性層１３上に形成された非磁性材料層１４は、例えばＣｕで形成される。非磁性材料層１４の膜厚は、１０Å～３０Å程度である。なお、図２に示す実施形態では磁気検出素子４はＣＩＰ（current in the　plane）型の巨大磁気抵抗効果素子（ＧＭＲ素子）で形成されるが、トンネル型磁気抵抗効果素子（ＴＭＲ素子）で形成される場合、非磁性材料層１４は、Ｍｇ－Ｏ、Ｔｉ－Ｏ、Ａｌ－Ｏ等から成る絶縁障壁層で形成される。トンネル型磁気抵抗効果素子やＣＰＰ（current perpendicular　to　the plane）型の巨大磁気抵抗効果素子の場合、図２に示す固定磁性層１３の下側と、フリー磁性層１５の上側に夫々電極層が設けられる。 The nonmagnetic material layer 14 formed on the pinned magnetic layer 13 is made of Cu, for example. The film thickness of the nonmagnetic material layer 14 is about 10 to 30 mm. In the embodiment shown in FIG. 2, the magnetic sensing element 4 is formed of a CIP (current-in-the-plane) type giant magnetoresistive element (GMR element), but is formed of a tunnel type magnetoresistive element (TMR element). In this case, the nonmagnetic material layer 14 is formed of an insulating barrier layer made of Mg—O, Ti—O, Al—O or the like. In the case of a tunnel type magnetoresistive effect element or a CPP (current perpendicular to the plane) type giant magnetoresistive effect element, an electrode layer is provided below the fixed magnetic layer 13 and above the free magnetic layer 15 shown in FIG. It is done.
　フリー磁性層１５は下からエンハンス層１７，軟磁性層１８の順に積層されて構成される。エンハンス層１７の形成は必須でないが、エンハンス層１７を設けることで、抵抗変化率（ΔＲ／Ｒ）を大きくできるので、磁気感度を向上させるにはエンハンス層１７を設けることが好ましい。エンハンス層１７は例えばＣｏ－Ｆｅで形成される。 The free magnetic layer 15 is formed by laminating an enhancement layer 17 and a soft magnetic layer 18 in this order from the bottom. The formation of the enhancement layer 17 is not essential, but since the resistance change rate (ΔR / R) can be increased by providing the enhancement layer 17, it is preferable to provide the enhancement layer 17 in order to improve magnetic sensitivity. The enhancement layer 17 is made of, for example, Co—Fe.
　また軟磁性層１８は、エンハンス層１７よりも低保磁力、低異方性磁界である等、軟磁気特性に優れた材質である。軟磁性層１８は例えばＮｉ－Ｆｅで形成されることが好適である。軟磁性層１８の膜厚は、１０Å～３０Å程度で形成されることが好適である。 Further, the soft magnetic layer 18 is a material excellent in soft magnetic characteristics such as a lower coercive force and a lower anisotropic magnetic field than the enhancement layer 17. The soft magnetic layer 18 is preferably made of, for example, Ni—Fe. The thickness of the soft magnetic layer 18 is preferably about 10 to 30 mm.
　保護層１６はＴａ等の非磁性材料で形成され、３０Å～６０Å程度の膜厚で形成される。
　上記した各層の成膜は真空中で行う。 The protective layer 16 is made of a nonmagnetic material such as Ta and has a thickness of about 30 to 60 mm.
The above layers are formed in a vacuum.
　本実施形態では、図２に示すように、基板１０と固定磁性層１３との間に導電層６を設けた構成に加えて、固定磁性層１３を積層フェリ構造とし、更に各磁気検出素子２～５に反強磁性層を設けていない。 In the present embodiment, as shown in FIG. 2, in addition to the configuration in which the conductive layer 6 is provided between the substrate 10 and the pinned magnetic layer 13, the pinned magnetic layer 13 has a laminated ferrimagnetic structure, and each magnetic detection element 2. No antiferromagnetic layer is provided in .about.5.
　本実施形態では、導電層６に電流Ｉを流しながら図２に示す積層フェリ構造の固定磁性層１３を成膜する。この結果、右ねじの法則により、図１に示すように、第１パターン部６ａ上に重ねて位置する第１磁気検出素子２の第１磁性層１３ａにはＸ１方向の外部磁場Ｂが進入し、第２パターン部６ｂ上に重ねて位置する第２磁気検出素子３の第１磁性層１３ａにはＹ２方向の外部磁場Ｃが進入し、第３パターン部６ｃ上に重ねて位置する第３磁気検出素子４の第１磁性層１３ａにはＸ２方向の外部磁場Ｄが進入し、第４パターン部６ｄ上に重ねて位置する第４磁気検出素子５の第１磁性層１３ａにはＹ１方向の外部磁場Ｅが進入する。 In this embodiment, the pinned magnetic layer 13 having the laminated ferrimagnetic structure shown in FIG. As a result, the external magnetic field B in the X1 direction enters the first magnetic layer 13a of the first magnetic detection element 2 positioned on the first pattern portion 6a as shown in FIG. The external magnetic field C in the Y2 direction enters the first magnetic layer 13a of the second magnetic detection element 3 positioned over the second pattern portion 6b, and the third magnetic layer positioned over the third pattern portion 6c. An external magnetic field D in the X2 direction enters the first magnetic layer 13a of the detection element 4, and the first magnetic layer 13a of the fourth magnetic detection element 5 located on the fourth pattern portion 6d is external in the Y1 direction. Magnetic field E enters.
　導電層６はＣｕ等の良導体で形成されることが好ましいが材質を特に限定するものではない。導電層６は、基板１０上の全面にスパッタ法等の薄膜技術を用いて成膜した後、フォトリソグラフィ技術を用いて図１に示すパターンにて高精度に形成することができる。したがって導電層６の第１パターン部６ａ及び第３パターン部６ｃをＹ１－Ｙ２方向に沿って高精度にパターン形成でき、導電層６の第２パターン部６ｂ及び第４パターン部６ｄをＸ１－Ｘ２方向に沿って高精度にパターン形成できる。よって第１パターン部６ａへの通電により生じた外部磁場Ｂの第１磁気検出素子２に対する進入方向をＸ１方向に高精度に制御でき、第２パターン部６ｂへの通電により生じた外部磁場Ｃの第２磁気検出素子３に対する進入方向をＹ２方向に高精度に制御でき、第３パターン部６ｃへの通電により生じた外部磁場Ｄの第３磁気検出素子４に対する進入方向をＸ２方向に高精度に制御でき、第４パターン部６ｄへの通電により生じた外部磁場Ｅの第４磁気検出素子５に対する進入方向をＹ１方向に高精度に制御できる。 The conductive layer 6 is preferably formed of a good conductor such as Cu, but the material is not particularly limited. The conductive layer 6 can be formed on the entire surface of the substrate 10 using a thin film technique such as sputtering, and then formed with high accuracy with the pattern shown in FIG. 1 using a photolithography technique. Therefore, the first pattern portion 6a and the third pattern portion 6c of the conductive layer 6 can be patterned with high precision along the Y1-Y2 direction, and the second pattern portion 6b and the fourth pattern portion 6d of the conductive layer 6 are X1-X2 Patterns can be formed with high accuracy along the direction. Therefore, the approach direction of the external magnetic field B generated by energizing the first pattern portion 6a to the first magnetic detection element 2 can be controlled with high accuracy in the X1 direction, and the external magnetic field C generated by energizing the second pattern portion 6b can be controlled. The approach direction with respect to the second magnetic detection element 3 can be controlled with high accuracy in the Y2 direction, and the approach direction of the external magnetic field D generated by energizing the third pattern portion 6c with respect to the third magnetic detection element 4 with high accuracy in the X2 direction. It is possible to control the approach direction of the external magnetic field E generated by energization of the fourth pattern portion 6d to the fourth magnetic detection element 5 in the Y1 direction with high accuracy.
　各磁気検出素子２～５の第１磁性層１３ａの磁化固定方向（図３に示すＭ１）は、夫々、外部磁場Ｂ～Ｅの方向と平行に制御される。また各磁気検出素子２～５の第２磁性層１３ｃは、ＲＫＫＹ結合磁界により第１磁性層１３ａの磁化固定方向に対して反平行に磁化固定される。 The magnetization fixed direction (M1 shown in FIG. 3) of the first magnetic layer 13a of each of the magnetic detection elements 2 to 5 is controlled in parallel with the directions of the external magnetic fields B to E, respectively. Further, the second magnetic layer 13c of each of the magnetic detection elements 2 to 5 is magnetization fixed in antiparallel to the magnetization fixed direction of the first magnetic layer 13a by the RKKY coupling magnetic field.
　図１に示すように、各磁気検出素子２～５は例えばミアンダ形状で形成される。第１磁気検出素子２及び第３磁気検出素子４はＸ１－Ｘ２方向に平行に向く素子部、及び第２磁気検出素子３及び第４磁気検出素子５はＹ１－Ｙ２方向に平行に向く素子部が夫々、図２に示す積層構造で形成され、それ以外の各素子部の端部間を連結する部分は非磁性導電層や永久磁石層等で形成できる。なお図１に示すミアンダ形状全体を図２に示す積層構造で形成することもできる。また各磁気検出素子２～５間を接続する部分（配線部）についても非磁性導電層で形成することができる。 As shown in FIG. 1, each of the magnetic detection elements 2 to 5 is formed in a meander shape, for example. The first magnetic detection element 2 and the third magnetic detection element 4 are element parts oriented parallel to the X1-X2 direction, and the second magnetic detection element 3 and the fourth magnetic detection element 5 are element parts oriented parallel to the Y1-Y2 direction. 2 are formed by the laminated structure shown in FIG. 2, and the other portions connecting the end portions of the respective element portions can be formed by a nonmagnetic conductive layer, a permanent magnet layer, or the like. The entire meander shape shown in FIG. 1 can also be formed by the laminated structure shown in FIG. In addition, a portion (wiring portion) connecting the magnetic detection elements 2 to 5 can also be formed of a nonmagnetic conductive layer.
　図１に示すように、各磁気検出素子２～５の幅寸法Ｔ１は、各磁気検出素子２～５の下方に位置する導電層６の幅寸法Ｔ２よりも小さく形成されてもよい。これにより、導電層６の各パターン部６ａ～６ｄの上方に適切に磁気検出素子２～５を重ねて形成することが出来る。 As shown in FIG. 1, the width dimension T1 of each magnetic detection element 2-5 may be formed smaller than the width dimension T2 of the conductive layer 6 located below each magnetic detection element 2-5. Thereby, the magnetic detection elements 2 to 5 can be appropriately overlapped and formed above the pattern portions 6a to 6d of the conductive layer 6.
　本実施形態の磁気センサの製造方法を図３を用いて説明する。
　図３は、本実施形態における磁気センサ１の特に磁気検出素子２～５の部分の製造方法を示す工程図である。図３（ａ）～図３（ｄ）は製造工程中における第３磁気検出素子４の縦断面を模式的に示したものである。なお他の磁気検出素子２，３，５も図３と同様の製造方法にて形成される。 A method for manufacturing the magnetic sensor of this embodiment will be described with reference to FIG.
FIG. 3 is a process diagram showing a method of manufacturing the magnetic sensor 1, particularly the magnetic detection elements 2 to 5, in the present embodiment. FIGS. 3A to 3D schematically show a longitudinal section of the third magnetic detection element 4 during the manufacturing process. The other magnetic detection elements 2, 3, and 5 are also formed by the same manufacturing method as in FIG.
　図３（ａ）に示す工程では、基板１０上に導電層（コイル層）６を形成する。Ｃｕ等から成る導電層６を基板１０上の全面にスパッタ等の薄膜技術を用いて成膜し、更に、図２に示す平面パターンにフォトリソグラフィ技術を用いてパターン形成する。これにより導電層６に第１パターン部６ａ，第２パターン部６ｂ，第３パターン部６ｃ，第４パターン部６ｄを高精度に形成することができる。 In the step shown in FIG. 3A, a conductive layer (coil layer) 6 is formed on the substrate 10. A conductive layer 6 made of Cu or the like is formed on the entire surface of the substrate 10 using a thin film technique such as sputtering, and further, a pattern is formed on the planar pattern shown in FIG. 2 using a photolithography technique. As a result, the first pattern portion 6a, the second pattern portion 6b, the third pattern portion 6c, and the fourth pattern portion 6d can be formed in the conductive layer 6 with high accuracy.
　図３（ａ）の工程では、導電層６上に絶縁層１１をスパッタ法等の薄膜技術を用いて成膜する。絶縁層１１を導電層６上から図２のように導電層６の周囲に広がる基板１０上の全面に成膜する。 3A, the insulating layer 11 is formed on the conductive layer 6 by using a thin film technique such as sputtering. The insulating layer 11 is formed on the entire surface of the substrate 10 extending from the conductive layer 6 to the periphery of the conductive layer 6 as shown in FIG.
　次に図３（ｂ）の工程では、絶縁層１１上にシード層１２をスパッタ法等の薄膜技術を用いて成膜し、更にシード層１２上に積層フェリ構造の固定磁性層１３を構成する第１磁性層１３ａをスパッタ法等の薄膜技術を用いて成膜する。 Next, in the step of FIG. 3B, a seed layer 12 is formed on the insulating layer 11 by using a thin film technique such as sputtering, and a fixed magnetic layer 13 having a laminated ferri structure is formed on the seed layer 12. The first magnetic layer 13a is formed using a thin film technique such as sputtering.
　本実施形態では、導電層６に電流を流しながらＣｏ－Ｆｅ等の第１磁性層１３ａを成膜する。これにより、導電層６からは右ねじの法則により外部磁場が生じ、第１磁気検出素子２を構成する第１磁性層１３ａには図１に示すＸ１方向の外部磁場Ｂが印加され、第２磁気検出素子３を構成する第１磁性層１３ａには図１に示すＹ２方向の外部磁場Ｃが印加され、第３磁気検出素子４を構成する第１磁性層１３ａには図１に示すＸ２方向の外部磁場Ｄが印加され、第４磁気検出素子５を構成する第１磁性層１３ａには図１に示すＹ１方向の外部磁場Ｅが印加される。したがって各磁気検出素子２～５の第１磁性層１３ａの磁化方向Ｍ１は、夫々、印加される外部磁場Ｂ～Ｅと平行な方向に保持される。 In the present embodiment, the first magnetic layer 13a such as Co—Fe is formed while a current is passed through the conductive layer 6. As a result, an external magnetic field is generated from the conductive layer 6 according to the right-handed screw law, and the external magnetic field B in the X1 direction shown in FIG. 1 is applied to the first magnetic layer 13a constituting the first magnetic detection element 2, and the second An external magnetic field C in the Y2 direction shown in FIG. 1 is applied to the first magnetic layer 13a constituting the magnetic detection element 3, and the X2 direction shown in FIG. 1 is applied to the first magnetic layer 13a constituting the third magnetic detection element 4. The external magnetic field D is applied, and the first magnetic layer 13a constituting the fourth magnetic detection element 5 is applied with the external magnetic field E in the Y1 direction shown in FIG. Therefore, the magnetization direction M1 of the first magnetic layer 13a of each of the magnetic detection elements 2 to 5 is maintained in a direction parallel to the applied external magnetic fields B to E, respectively.
　このとき本実施形態では、第１磁性層１３ａが磁気飽和する程度の弱磁場（数十（Ｏｅ））を印加すれば、第１磁性層１３ａを単磁区化でき安定した磁化状態を保つことが出来る。 At this time, in this embodiment, if a weak magnetic field (several tens (Oe)) that causes the first magnetic layer 13a to be magnetically saturated is applied, the first magnetic layer 13a can be made into a single magnetic domain and can maintain a stable magnetization state. I can do it.
　次に図３（ｃ）に示す工程では、第１磁性層１３ａ上にＲｕ等の非磁性中間層１３ｂを所定厚にてスパッタ法等の薄膜技術を用いて成膜し、更に非磁性中間層１３ｂ上にＣｏ－Ｆｅ等の第２磁性層１３ｃをスパッタ法等の薄膜技術を用いて成膜する。 Next, in the step shown in FIG. 3C, a nonmagnetic intermediate layer 13b such as Ru is formed on the first magnetic layer 13a at a predetermined thickness using a thin film technique such as sputtering, and further, the nonmagnetic intermediate layer is formed. A second magnetic layer 13c of Co—Fe or the like is formed on 13b using a thin film technique such as sputtering.
　本実施形態では図３（ｃ）に示すように、導電層６に電流Ｉを流し続けて、各磁気検出素子２～５の第１磁性層１３ａに外部磁場Ｂ～Ｅを印加し第１磁性層１３ａの磁化方向Ｍ１を前記外部磁場Ｂ～Ｅの方向に保持した状態で、第２磁性層１３ｃを成膜する。なお、非磁性中間層１３ｂの成膜中、導電層６に電流Ｉを流すのは任意であるが、固定磁性層１３の成膜中、導電層６にずっと電流Ｉを流し続けておくことが好ましい。 In this embodiment, as shown in FIG. 3 (c), the current I continues to flow through the conductive layer 6, and the external magnetic fields B to E are applied to the first magnetic layers 13a of the magnetic detection elements 2 to 5, respectively. The second magnetic layer 13c is formed in a state where the magnetization direction M1 of the layer 13a is maintained in the direction of the external magnetic fields B to E. While it is optional to pass the current I through the conductive layer 6 during the formation of the nonmagnetic intermediate layer 13b, it is possible to keep the current I flowing through the conductive layer 6 during the formation of the pinned magnetic layer 13. preferable.
　図３（ｃ）の工程では、各第１磁性層１３ａの磁化方向Ｍ１を各外部磁場Ｂ～Ｅの方向に保持し続けた状態で第２磁性層１３ｃを成膜することで、各第２磁性層１３ｃは、ＲＫＫＹ結合磁界により、エネルギー的に最も安定な第１磁性層１３ａの磁化方向に対して反平行に磁化され（図３（ｃ）のＭ２方向）、本実施形態によれば、反強磁性層を用いることなく低磁場にて、第１磁性層１３ａと第２磁性層１３ｃとを強固に反平行状態で磁化固定することが出来る。そして、導電層６への通電を停止しても、第１磁性層１３ａと第２磁性層１３ｃは安定して反平行状態で磁化固定されている。 In the step of FIG. 3C, the second magnetic layer 13c is formed in a state where the magnetization direction M1 of each first magnetic layer 13a is kept in the direction of each external magnetic field B to E. The magnetic layer 13c is magnetized antiparallel to the magnetization direction of the first magnetic layer 13a, which is the most stable in terms of energy, by the RKKY coupling magnetic field (the M2 direction in FIG. 3C), and according to the present embodiment, The first magnetic layer 13a and the second magnetic layer 13c can be strongly fixed in an antiparallel state in a low magnetic field without using an antiferromagnetic layer. Even when the conduction to the conductive layer 6 is stopped, the first magnetic layer 13a and the second magnetic layer 13c are stably magnetized and fixed in an antiparallel state.
　図３（ｄ）の工程では、固定磁性層１３上に、下から非磁性材料層１４、エンハンス層１７、軟磁性層１８、保護層１６を順に積層する。各層をスパッタ法等の薄膜技術を用いて成膜する。なお固定磁性層１３上の各層を成膜する際、既に積層フェリ構造の固定磁性層１３は磁化固定されているので、導電層６を通電する必要は無い。
　なお上記した各層の成膜は真空中で行う。 3D, a nonmagnetic material layer 14, an enhancement layer 17, a soft magnetic layer 18, and a protective layer 16 are sequentially laminated on the pinned magnetic layer 13 from the bottom. Each layer is formed using thin film technology such as sputtering. When each layer on the pinned magnetic layer 13 is formed, the pinned magnetic layer 13 having a laminated ferrimagnetic structure is already pinned by magnetization, so that it is not necessary to energize the conductive layer 6.
The above-described layers are formed in a vacuum.
　本実施形態における磁気センサ及びその製造方法は、従来と異なる磁化固定の制御方法を採用するものである。 The magnetic sensor and the manufacturing method thereof in the present embodiment employ a magnetization fixing control method different from the conventional one.
　本実施形態における磁気センサ１は、各固定磁性層１３と基板１０との間に導電層６が形成されている点、及び、前記固定磁性層１３が第１磁性層１３ａ／非磁性中間層１３ｂ／第２磁性層１３ｃの積層フェリ構造で形成されている点に特徴的部分がある。そして、前記導電層６には、図３（ｂ）（ｃ）に示すように、第１磁性層１３ａ及び第２磁性層１３ｃの成膜時に通電され、これにより前記第１磁性層１３ａに対して前記通電により生じた外部磁場が印加される。 In the magnetic sensor 1 according to the present embodiment, the conductive layer 6 is formed between each pinned magnetic layer 13 and the substrate 10, and the pinned magnetic layer 13 is a first magnetic layer 13a / nonmagnetic intermediate layer 13b. / There is a characteristic part in that it is formed of a laminated ferrimagnetic structure of the second magnetic layer 13c. Then, as shown in FIGS. 3B and 3C, the conductive layer 6 is energized during the formation of the first magnetic layer 13a and the second magnetic layer 13c, whereby the first magnetic layer 13a is energized. Thus, an external magnetic field generated by the energization is applied.
　本実施形態では、このように、導電層６に通電して生じる外部磁場Ｂ～Ｅを利用して磁化固定を行う。このとき、本実施形態では反強磁性層を用いず、導電層６の上方に重ねて、積層フェリ構造の固定磁性層１３を形成する形態とし、しかも図３（ｂ）（ｃ）で説明したように、第１磁性層１３ａ及び第２磁性層１３ｃの成膜時に、導電層６に通電して、第１磁性層１３ａに外部磁場を印加し続けている。 In this embodiment, magnetization is fixed by using the external magnetic fields B to E generated by energizing the conductive layer 6 as described above. At this time, in this embodiment, the antiferromagnetic layer is not used, and the pinned magnetic layer 13 having a laminated ferrimagnetic structure is formed over the conductive layer 6 and is described with reference to FIGS. As described above, when the first magnetic layer 13a and the second magnetic layer 13c are formed, the conductive layer 6 is energized and an external magnetic field is continuously applied to the first magnetic layer 13a.
　本実施形態では、複数の磁気検出素子２～５を形成する基板１０上に、予め、通電方向が異なる複数のパターン部６ａ～６ｄを備えた前記導電層６を形成し、各パターン部６ａ～６ｄに各磁気検出素子２～５を対向配置させている。これにより、前記導電層６に通電することで、各パターン部６ａ～６ｄから各磁気検出素子２～５の第１磁性層１３ａに異なる方向の外部磁場Ｂ～Ｅを印加でき、したがって１チップ構成で、磁化固定方向が異なる複数の磁気検出素子２～５を備えた磁気センサ１を形成することが可能になる。 In the present embodiment, the conductive layer 6 having a plurality of pattern portions 6a to 6d having different energization directions is formed in advance on the substrate 10 on which the plurality of magnetic detection elements 2 to 5 are formed, and each pattern portion 6a to The magnetic detection elements 2 to 5 are arranged to face each other on 6d. Thus, by applying current to the conductive layer 6, the external magnetic fields B to E in different directions can be applied from the pattern portions 6a to 6d to the first magnetic layers 13a of the magnetic detection elements 2 to 5, and thus a one-chip configuration. Thus, it is possible to form the magnetic sensor 1 including the plurality of magnetic detection elements 2 to 5 having different magnetization fixed directions.
　本実施形態では、上記した磁化固定の制御方法を採用することで、第１磁性層１３ａに磁気飽和する程度の弱磁場（数十～数百Ｏｅ程度）を作用させて、第１磁性層１３ａの磁化方向を外部磁場の方向に保持したうえで、第２磁性層１３ｃまで成膜し、これにより、第１磁性層１３ａと第２磁性層１３ｃとの間にＲＫＫＹ結合磁界を適切に生じさせ、第１磁性層１３ａと第２磁性層１３ｃとを強固に反平行に磁化固定できる。なお本実施形態では、外部磁場の印加時、加熱の必要はない（常温でよい）。 In the present embodiment, by adopting the above-described magnetization fixing control method, a weak magnetic field (several tens to several hundreds Oe) that causes magnetic saturation is applied to the first magnetic layer 13a, thereby causing the first magnetic layer 13a to operate. The magnetization direction is maintained in the direction of the external magnetic field, and the film is formed up to the second magnetic layer 13c, whereby an RKKY coupling magnetic field is appropriately generated between the first magnetic layer 13a and the second magnetic layer 13c. The first magnetic layer 13a and the second magnetic layer 13c can be strongly magnetized and fixed in antiparallel. In the present embodiment, heating is not required when an external magnetic field is applied (normal temperature is acceptable).
　更に、本実施形態では、図１に示すように、各磁気検出素子２～５の形成と同じ基板１０上に通電時に電流の流れる方向が異なる複数のパターン部６ａ～６ｄを備える導電層６を形成し、このとき、前記導電層６を薄膜技術及びフォトリソグラフィ技術等の微細加工技術を用いて形成できるので、前記の各パターン部６ａ～６ｄを高精度に形成できる。そして、各パターン部６ａ～６ｄに各磁気検出素子２～５を対向配置し、上記した磁化固定の制御方法を用いて各パターン部６ａ～６ｄから各磁気検出素子２～５の第１磁性層１３ａに弱磁場の外部磁場Ｂ～Ｅを印加した際、各第１磁性層１３ａに対する異なる磁場印加方向を高精度に制御でき、且つ異なる方向の外部磁場間での磁場干渉を小さくでき、したがって、同一の基板１０上に複数の磁気検出素子２～５の磁化固定方向を高精度に制御できる。 Furthermore, in the present embodiment, as shown in FIG. 1, the conductive layer 6 including a plurality of pattern portions 6a to 6d having different directions of current flow when energized is formed on the same substrate 10 as the formation of the magnetic detection elements 2 to 5. At this time, since the conductive layer 6 can be formed using a fine processing technique such as a thin film technique and a photolithography technique, the pattern portions 6a to 6d can be formed with high accuracy. Then, the magnetic detection elements 2 to 5 are arranged opposite to the pattern portions 6a to 6d, and the first magnetic layers of the magnetic detection elements 2 to 5 are transferred from the pattern portions 6a to 6d using the magnetization fixing control method described above. When the weak external magnetic fields B to E are applied to 13a, the different magnetic field application directions to the first magnetic layers 13a can be controlled with high accuracy, and the magnetic field interference between the external magnetic fields in the different directions can be reduced. The magnetization fixed directions of the plurality of magnetic detection elements 2 to 5 on the same substrate 10 can be controlled with high accuracy.
　また本実施形態では、外部磁場を弱磁場とすればよいから導電層６に流す電流値が小さくて済み導電層６及び電源装置への負担を小さくできる。 In this embodiment, since the external magnetic field only needs to be a weak magnetic field, the value of the current flowing through the conductive layer 6 can be small, and the burden on the conductive layer 6 and the power supply device can be reduced.
　以上のように、本実施形態によれば、導電層６及び積層フェリ構造を備える複数の磁気検出素子２～５を同一基板１０上に弱磁場にて異なる磁化固定方向に高精度に制御でき、検出精度に優れた１チップ構成の磁気センサ１を形成できる。１チップ構成にできることで、磁気センサ１の小型化を促進できる。 As described above, according to the present embodiment, the plurality of magnetic detection elements 2 to 5 having the conductive layer 6 and the laminated ferrimagnetic structure can be controlled with high accuracy in different magnetization fixed directions in the weak magnetic field on the same substrate 10. The magnetic sensor 1 having a one-chip configuration with excellent detection accuracy can be formed. The one-chip configuration can facilitate downsizing of the magnetic sensor 1.
　第１磁性層１３ａと第２磁性層１３ｃとの間に生じるＲＫＫＹ結合磁界の大きさは例えば非磁性中間層１３ｂの膜厚を制御することで強くでき、第１磁性層１３ａと第２磁性層１３ｃとを安定した反平行状態に磁化固定できる。例えば、非磁性中間層１３ｂを上記したように、２Å～１０Å程度（好ましくは３Å～５Å程度）に薄く形成することで、値が大きいファーストピークのＲＫＫＹ結合磁界を生じさせることができ、第１磁性層１３ａと第２磁性層１３ｃを安定で、かつ強固な反平行状態で磁化固定することが出来る。 The magnitude of the RKKY coupling magnetic field generated between the first magnetic layer 13a and the second magnetic layer 13c can be increased by controlling the film thickness of the nonmagnetic intermediate layer 13b, for example. The first magnetic layer 13a and the second magnetic layer 13c can be fixed in a stable antiparallel state. For example, by forming the nonmagnetic intermediate layer 13b as thin as about 2 to 10 mm (preferably about 3 to 5 mm) as described above, a first peak RKKY coupling magnetic field having a large value can be generated. The magnetization of the magnetic layer 13a and the second magnetic layer 13c can be fixed in a stable and strong antiparallel state.
　なお本実施形態では、図４に示すようにシード層１２から保護層１６までの積層膜２０を基板１０上の全面に１回、成膜する。このとき、図３（ｂ）（ｃ）工程の導電層６への通電により積層膜２０を各領域２０ａ～２０ｄごとに、第１磁性層１３ａの磁化固定方向Ｍ１が９０度ずつ異なる方向に制御できる。そして図３（ｄ）工程の次に、各領域２０ａ～２０ｄに図１に示す例えばミアンダ形状となる各磁気検出素子２～５を、フォトリソグラフィ技術を用いて高精度にパターン形成する。これにより、同一の基板１０上に複数の磁気検出素子２～５を同じ成膜工程、及び各第１磁性層１３ａ及び各第２磁性層１３ｃを同じ通電工程で形成でき、各磁気検出素子２～５の形成を容易化でき、且つ各磁気検出素子２～５の磁気、電気、温度の各特性を合わせ込むことが出来る。 In the present embodiment, as shown in FIG. 4, the laminated film 20 from the seed layer 12 to the protective layer 16 is formed once on the entire surface of the substrate 10. At this time, by energizing the conductive layer 6 in the steps (b) and (c) of FIG. 3, the laminated film 20 is controlled so that the magnetization fixed direction M1 of the first magnetic layer 13a differs by 90 degrees for each of the regions 20a to 20d. it can. Then, after the step of FIG. 3D, the magnetic detection elements 2 to 5 having, for example, the meander shape shown in FIG. 1 are patterned with high accuracy in the regions 20a to 20d by using the photolithography technique. As a result, the plurality of magnetic sensing elements 2 to 5 can be formed on the same substrate 10 in the same film forming step, and each first magnetic layer 13a and each second magnetic layer 13c can be formed in the same energizing step. Can be easily formed, and the magnetic, electrical, and temperature characteristics of the magnetic detection elements 2 to 5 can be combined.
　また図５に示すように、本実施形態ではウエハ状の大基板３０上に導電層３１を形成する。図５では導電層３１はＸ１－Ｘ２方向に直線状となっているが、実際には図１のように屈曲したパターン形状が、大基板３０の点線で区切られた各領域３０ａに夫々形成されている。図５に示す点線で区切られた各領域３０ａが図１に示す基板１０と同じ大きさである。導電層３１は全ての領域３０ａを通るように形成される。導電層３１は一本で無く複数設けられてもよい。ただし導電層３１を一本とすることで、導電層３１の電流回路が１つとなり製造管理を容易化できる。 Further, as shown in FIG. 5, in the present embodiment, a conductive layer 31 is formed on a wafer-like large substrate 30. In FIG. 5, the conductive layer 31 is linear in the X1-X2 direction, but in reality, a bent pattern shape as shown in FIG. 1 is formed in each region 30a separated by the dotted line of the large substrate 30. ing. Each region 30a delimited by a dotted line shown in FIG. 5 has the same size as the substrate 10 shown in FIG. The conductive layer 31 is formed so as to pass through all the regions 30a. A plurality of conductive layers 31 may be provided instead of one. However, by making the conductive layer 31 one, the current circuit of the conductive layer 31 becomes one and manufacturing management can be facilitated.
　次に図４で説明したと同様に、大基板３０上の全面に、積層膜２０を形成し、このとき固定磁性層１３を構成する第１磁性層１３ａ及び第２磁性層１３ｃを、導電層３１を通電しながら成膜する。そして、前記積層膜２０を図１に示すようなミアンダ形状の多数の磁気検出素子２～５にパターン形成した後、図５に示す各領域をダイシングして多数の磁気センサ１を製造する。このように多数の磁気センサ１を同時に製造でき、また従来のようにマウント角度の調整やダイボンディング工程等が必要なく、簡単な製造方法を実現できる。 Next, as described with reference to FIG. 4, the laminated film 20 is formed on the entire surface of the large substrate 30, and at this time, the first magnetic layer 13 a and the second magnetic layer 13 c constituting the pinned magnetic layer 13 are formed as conductive layers. The film is formed while energizing 31. Then, after patterning the laminated film 20 on a large number of meander-shaped magnetic detecting elements 2 to 5 as shown in FIG. 1, the regions shown in FIG. 5 are diced to manufacture a large number of magnetic sensors 1. In this way, a large number of magnetic sensors 1 can be manufactured at the same time, and a simple manufacturing method can be realized without the need for adjustment of the mount angle and the die bonding process as in the prior art.
　図１に示す磁気センサ１は、例えばポテンショメータに使用される。図１に示す磁気センサ１では、各磁気検出素子２～５の第１磁性層１３ａ及び第２磁性層１３ｃの磁化固定方向が９０度ずつ異なっている。なお抵抗変化に直接寄与する層は固定磁性層１３のうち第２磁性層１３ｃとフリー磁性層１５である。そして各磁気検出素子２～５がフルブリッジ回路あるいは分圧回路に配線されている。 1 is used for a potentiometer, for example. In the magnetic sensor 1 shown in FIG. 1, the magnetization fixed directions of the first magnetic layer 13a and the second magnetic layer 13c of the magnetic detection elements 2 to 5 are different by 90 degrees. The layers that directly contribute to the resistance change are the second magnetic layer 13 c and the free magnetic layer 15 of the pinned magnetic layer 13. The magnetic detection elements 2 to 5 are wired to a full bridge circuit or a voltage dividing circuit.
　磁気センサ１には非接触の磁石（磁界発生手段）が対向配置されており、前記磁石が回転することで前記磁気センサ１に検出磁界が作用する。この検出磁界が各磁気検出素子２～５に作用し、各磁気検出素子２～５の抵抗変化に基づく出力値により磁石の回転角度を検知することが可能になっている。 A non-contact magnet (magnetic field generating means) is disposed opposite to the magnetic sensor 1, and a detection magnetic field acts on the magnetic sensor 1 by rotating the magnet. This detection magnetic field acts on each of the magnetic detection elements 2 to 5, and the rotation angle of the magnet can be detected from the output value based on the resistance change of each of the magnetic detection elements 2 to 5.
　本実施形態における磁気センサ１は、ポテンショメータに限らず、磁気エンコーダ、磁気スイッチ等として使用することも出来る。本実施形態は、同一の基板１０上に成膜される各磁気検出素子の磁化固定方向が少なくとも２方向で異なるように制御される全ての磁気センサに適用される。例えば１８０度ずつ異なる方向に磁化固定方向を規制できる。 The magnetic sensor 1 in this embodiment can be used not only as a potentiometer but also as a magnetic encoder, a magnetic switch, or the like. This embodiment is applied to all magnetic sensors that are controlled so that the magnetization fixed directions of the magnetic detection elements formed on the same substrate 10 are different in at least two directions. For example, the magnetization fixed direction can be regulated in different directions by 180 degrees.
　また本実施形態における製品としての磁気センサ１には、図１に示すような連続した経路パターンを備える導電層６が残されていなくてもよい。すなわち、導電層６は製造過程で使用されるものであるから、磁化固定制御後、不要な部分の導電層６を除去等することが可能である。ただし残された導電層６の存在により、第１磁性層及び第２磁性層の成膜時に、前記導電層６に通電して外部磁場を前記第１磁性層に印加していたことを推測することが出来る。 Further, the magnetic sensor 1 as a product in the present embodiment does not have to be left with the conductive layer 6 having a continuous path pattern as shown in FIG. That is, since the conductive layer 6 is used in the manufacturing process, an unnecessary portion of the conductive layer 6 can be removed after the magnetization fixation control. However, due to the presence of the remaining conductive layer 6, it is presumed that the conductive layer 6 was energized and an external magnetic field was applied to the first magnetic layer when the first magnetic layer and the second magnetic layer were formed. I can do it.
１　磁気センサ
２～５　磁気検出素子
６、３１　導電層（コイル層）
６ａ～６ｄ　各パターン部
１０　基板
１３　固定磁性層
１３ａ　第１磁性層
１３ｂ　非磁性中間層
１３ｃ　第２磁性層
１４　非磁性材料層
１５　フリー磁性層
２０　積層膜
３０　大基板
Ｂ～Ｅ　外部磁場
Ｉ　電流
Ｍ１　第１磁性層の磁化固定方向
Ｍ２　第２磁性層の磁化固定方向 1 Magnetic sensor 2 to 5 Magnetic detection element 6, 31 Conductive layer (coil layer)
6a to 6d Each pattern portion 10 Substrate 13 Fixed magnetic layer 13a First magnetic layer 13b Nonmagnetic intermediate layer 13c Second magnetic layer 14 Nonmagnetic material layer 15 Free magnetic layer 20 Laminated film 30 Large substrate B to E External magnetic field I Current M1 Magnetization fixed direction M2 of the first magnetic layer Magnetization fixed direction of the second magnetic layer

Claims (10)

  1. 　検出磁界を生じる磁界発生手段と非接触に設けられ、前記検出磁界を検知する磁気検出素子を備えた磁気センサにおいて、
    　複数の前記磁気検出素子が同一の基板上に形成され、
    　各磁気検出素子は、下から、磁化方向が固定される固定磁性層、非磁性材料層及び、前記検出磁界に対して磁化方向が変動するフリー磁性層の順に積層された積層部分を有し、
    　各固定磁性層は、下から第１磁性層、非磁性中間層、第２磁性層の順に積層され、前記第１磁性層と前記第２磁性層の磁化固定方向が反平行である積層フェリ構造であり、
    　各固定磁性層と前記基板との間には、通電により生じた外部磁場を前記第１磁性層及び前記第２磁性層の成膜時に印加するための導電層が形成されており、
    　前記導電層には、通電時に電流の流れる方向が異なる複数のパターン部が形成されており、各磁気検出素子は、各パターン部に対向して形成されて、２つ以上の各磁気検出素子の各第１磁性層の磁化固定方向が異なる方向に制御されていることを特徴とする磁気センサ。     In a magnetic sensor comprising a magnetic detection element that is provided in non-contact with a magnetic field generating means for generating a detection magnetic field and detects the detection magnetic field,
    A plurality of the magnetic sensing elements are formed on the same substrate;
    Each magnetic detection element has, from below, a layered portion in which a pinned magnetic layer whose magnetization direction is fixed, a nonmagnetic material layer, and a free magnetic layer whose magnetization direction varies with respect to the detection magnetic field are stacked in this order.
    Each pinned magnetic layer is laminated in order of a first magnetic layer, a nonmagnetic intermediate layer, and a second magnetic layer from below, and a laminated ferrimagnetic structure in which the magnetization pinned directions of the first magnetic layer and the second magnetic layer are antiparallel. And
    Between each pinned magnetic layer and the substrate, a conductive layer for applying an external magnetic field generated by energization when forming the first magnetic layer and the second magnetic layer is formed,
    In the conductive layer, a plurality of pattern portions having different directions of current flow when energized are formed, and each magnetic detection element is formed to face each pattern portion, and two or more magnetic detection elements A magnetic sensor, wherein the magnetization fixed directions of the first magnetic layers are controlled in different directions.
  2. 　基板表面内にて直交する方向をＸ１－Ｘ２方向とＹ１－Ｙ２方向としたとき、
    　前記導電層には、通電時に電流の流れる方向がＹ１方向の第１パターン部、電流の流れる方向がＸ１方向の第２パターン部、電流の流れる方向がＹ２方向の第３パターン部、電流の流れる方向がＸ２方向の第４パターン部が夫々形成されており、
    　各磁気検出素子が、前記第１パターン部、前記第２パターン部、前記第３パターン部及び前記第４パターン部に夫々、対向して形成されて、各磁気検出素子の第１磁性層の磁化固定方向が９０度ずつ異なる方向に制御されている請求項１記載の磁気センサ。     When the orthogonal directions in the substrate surface are the X1-X2 direction and the Y1-Y2 direction,
    The conductive layer has a first pattern portion in which the current flows in the Y1 direction when energized, a second pattern portion in which the current flows in the X1 direction, a third pattern portion in which the current flows in the Y2 direction, and a current flows in the conductive layer. A fourth pattern portion whose direction is the X2 direction is formed respectively.
    Each magnetic detection element is formed to face the first pattern portion, the second pattern portion, the third pattern portion, and the fourth pattern portion, respectively, and the magnetization of the first magnetic layer of each magnetic detection element The magnetic sensor according to claim 1, wherein the fixing directions are controlled in different directions by 90 degrees.
  3. 　前記第１磁性層及び前記第２磁性層はＣｏを含む磁性材料で形成され、前記非磁性中間層は、Ｒｕ、Ｒｈ、Ｉｒ、Ｃｒ、Ｒｅ、Ｃｕのうち少なくともいずれか１種で形成される請求項１又は２に記載の磁気センサ。 The first magnetic layer and the second magnetic layer are made of a magnetic material containing Co, and the nonmagnetic intermediate layer is made of at least one of Ru, Rh, Ir, Cr, Re, and Cu. The magnetic sensor according to claim 1 or 2.
  4. 　前記非磁性中間層の膜厚は、２Å～１０Åの範囲内である請求項３記載の磁気センサ。 The magnetic sensor according to claim 3, wherein the film thickness of the nonmagnetic intermediate layer is in the range of 2 to 10 mm.
  5. 　検出磁界を生じる磁界発生手段と非接触に設けられ、前記検出磁界を検知する磁気検出素子を備えた磁気センサの製造方法において、
    　基板上に導電層を形成し、このとき、前記導電層への通電時に電流の流れる方向が異なる複数のパターン部を形成する工程、
    　各パターン部上に第１磁性層を成膜し、このとき、前記導電層に電流を流して生じる外部磁場を前記第１磁性層に印加しながら前記第１磁性層を成膜する工程、
    　前記第１磁性層上に非磁性中間層を介して第２磁性層を成膜して、前記第１磁性層、前記非磁性中間層及び前記第２磁性層の積層フェリ構造から成る固定磁性層を形成し、このとき、前記導電層に電流を流して生じる外部磁場を前記第１磁性層に印加しながら前記第２磁性層を成膜する工程、
    　前記第２磁性層上に非磁性材料層及びフリー磁性層を成膜して、前記固定磁性層、前記非磁性材料層及び前記フリー磁性層の積層構造を有し、第１磁性層の磁化固定方向が異なる複数の前記磁気検出素子を形成する工程、
    　を有することを特徴とする磁気センサの製造方法。     In a method of manufacturing a magnetic sensor provided with a magnetic detection element that is provided in non-contact with a magnetic field generating means for generating a detection magnetic field and detects the detection magnetic field,
    Forming a conductive layer on the substrate, and at this time, forming a plurality of pattern portions having different current flow directions when the conductive layer is energized;
    Forming a first magnetic layer on each pattern portion, and forming the first magnetic layer while applying an external magnetic field generated by passing a current through the conductive layer to the first magnetic layer;
    A pinned magnetic layer comprising a laminated ferrimagnetic structure of the first magnetic layer, the nonmagnetic intermediate layer, and the second magnetic layer, wherein a second magnetic layer is formed on the first magnetic layer via a nonmagnetic intermediate layer. Forming the second magnetic layer while applying an external magnetic field generated by passing a current through the conductive layer to the first magnetic layer,
    A nonmagnetic material layer and a free magnetic layer are formed on the second magnetic layer to have a laminated structure of the pinned magnetic layer, the nonmagnetic material layer, and the free magnetic layer, and the magnetization of the first magnetic layer is fixed. Forming a plurality of the magnetic sensing elements having different directions;
    A method of manufacturing a magnetic sensor, comprising:
  6. 　前記導電層上の全面に、前記積層フェリ構造の固定磁性層を成膜し、このとき、第１磁性層及び第２磁性層を前記導電層に電流を流しながら成膜し、更に前記固定磁性層上に非磁性材料層及びフリー磁性層を成膜して前記積層構造を形成し、
    　前記導電層の各パターン部との対向位置に前記積層構造を残して、第１磁性層の磁化固定方向が異なる複数の前記磁気検出素子をパターン形成する請求項５記載の磁気センサの製造方法。     A pinned magnetic layer having the laminated ferri structure is formed on the entire surface of the conductive layer. At this time, the first magnetic layer and the second magnetic layer are formed while a current is passed through the conductive layer, and the fixed magnetic layer is further formed. A nonmagnetic material layer and a free magnetic layer are formed on the layer to form the laminated structure,
    The method of manufacturing a magnetic sensor according to claim 5, wherein the plurality of magnetic sensing elements having different magnetization fixed directions of the first magnetic layer are patterned while leaving the stacked structure at positions facing the pattern portions of the conductive layer.
  7. 　基板表面内にて直交する方向をＸ１－Ｘ２方向とＹ１－Ｙ２方向としたとき、
    　前記導電層に、電流の流れる方向がＹ１方向の第１パターン部、電流の流れる方向がＸ１方向の第２パターン部、電流の流れる方向がＹ２方向の第３パターン部、電流の流れる方向がＸ２方向の第４パターン部を夫々形成し、
    　各磁気検出素子を、前記第１パターン部、前記第２パターン部、前記第３パターン部及び前記第４パターン部と対向する位置に夫々、形成して、各磁気検出素子の第１磁性層の磁化固定方向を９０度ずつ異なる方向に制御する請求項５又は６に記載の磁気センサの製造方法。     When the orthogonal directions in the substrate surface are the X1-X2 direction and the Y1-Y2 direction,
    In the conductive layer, a current flowing direction is a first pattern portion in the Y1 direction, a current flowing direction is a second pattern portion in the X1 direction, a current flowing direction is a third pattern portion in the Y2 direction, and a current flowing direction is X2. Forming a fourth pattern part in each direction,
    Each magnetic detection element is formed at a position facing the first pattern portion, the second pattern portion, the third pattern portion, and the fourth pattern portion, respectively, and the first magnetic layer of each magnetic detection element is formed. The method for manufacturing a magnetic sensor according to claim 5, wherein the magnetization fixed direction is controlled to be different by 90 degrees.
  8. 　前記第１磁性層及び前記第２磁性層をＣｏを含む磁性材料で形成し、前記非磁性中間層を、Ｒｕ、Ｒｈ、Ｉｒ、Ｃｒ、Ｒｅ、Ｃｕのうち少なくともいずれか１種で形成する請求項５ないし７のいずれか１項に記載の磁気センサの製造方法。 The first magnetic layer and the second magnetic layer are formed of a magnetic material containing Co, and the nonmagnetic intermediate layer is formed of at least one of Ru, Rh, Ir, Cr, Re, and Cu. Item 8. A method for manufacturing a magnetic sensor according to any one of Items 5 to 7.
  9. 　前記非磁性中間層の膜厚を、２Å～１０Åの範囲内で形成する請求項８記載の磁気センサの製造方法。 The method for manufacturing a magnetic sensor according to claim 8, wherein the film thickness of the nonmagnetic intermediate layer is within a range of 2 mm to 10 mm.
  10. 　大基板に区切られた各領域上を通るように前記導電層を形成し、前記導電層上に多数の磁気検出素子を形成し、大基板を各領域ごとに切断して個々に分離する請求項５ないし９のいずれか１項に記載の磁気センサの製造方法。 The conductive layer is formed so as to pass over each region partitioned by a large substrate, a plurality of magnetic detection elements are formed on the conductive layer, and the large substrate is cut into each region and separated individually. The method for manufacturing a magnetic sensor according to any one of 5 to 9.
PCT/JP2010/065476 2009-09-17 2010-09-09 Magnetic sensor and production method therefor WO2011033980A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08511873A (en) * 1994-04-15 1996-12-10 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Magnetic field sensor, device comprising such a sensor and method of manufacturing such a sensor
JPH11505966A (en) * 1995-06-01 1999-05-25 シーメンス アクチエンゲゼルシヤフト Magnetic field sensor with bridge circuit of magnetoresistive bridge element
JP2002303536A (en) * 2001-04-03 2002-10-18 Alps Electric Co Ltd Rotation angle detecting sensor
JP2008166530A (en) * 2006-12-28 2008-07-17 Alps Electric Co Ltd Tunnel magnetism detection element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08511873A (en) * 1994-04-15 1996-12-10 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Magnetic field sensor, device comprising such a sensor and method of manufacturing such a sensor
JPH11505966A (en) * 1995-06-01 1999-05-25 シーメンス アクチエンゲゼルシヤフト Magnetic field sensor with bridge circuit of magnetoresistive bridge element
JP2002303536A (en) * 2001-04-03 2002-10-18 Alps Electric Co Ltd Rotation angle detecting sensor
JP2008166530A (en) * 2006-12-28 2008-07-17 Alps Electric Co Ltd Tunnel magnetism detection element

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