WO2011026129A2 - Radio frequency (rf) ground return arrangements - Google Patents

Radio frequency (rf) ground return arrangements Download PDF

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Publication number
WO2011026129A2
WO2011026129A2 PCT/US2010/047379 US2010047379W WO2011026129A2 WO 2011026129 A2 WO2011026129 A2 WO 2011026129A2 US 2010047379 W US2010047379 W US 2010047379W WO 2011026129 A2 WO2011026129 A2 WO 2011026129A2
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WO
WIPO (PCT)
Prior art keywords
support structure
electrode support
contact
ground
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/047379
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French (fr)
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WO2011026129A3 (en
Inventor
Rajinder Dhindsa
Akira Koshishi
Alexei Marakhtanov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
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Lam Research Corp
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Priority to KR1020187012209A priority Critical patent/KR20180049208A/en
Priority to KR1020197024870A priority patent/KR102164678B1/en
Priority to KR1020217008661A priority patent/KR102285582B1/en
Priority to KR1020127005375A priority patent/KR101854922B1/en
Priority to JP2012527106A priority patent/JP5745519B2/en
Priority to KR1020177031995A priority patent/KR20170125419A/en
Priority to KR1020207028516A priority patent/KR102201934B1/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to KR1020217000342A priority patent/KR102219924B1/en
Priority to KR1020217004951A priority patent/KR102240849B1/en
Priority to SG2012008280A priority patent/SG178286A1/en
Priority to KR1020197024878A priority patent/KR102233437B1/en
Priority to CN201080037830.1A priority patent/CN102484063B/en
Publication of WO2011026129A2 publication Critical patent/WO2011026129A2/en
Publication of WO2011026129A3 publication Critical patent/WO2011026129A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

Definitions

  • RF radio frequency
  • FIG. 1 shows a simple block diagram of a capacitively- coupled plasma processing system with a processing chamber 100.
  • a gas may interact with an RF current.
  • the current may flow from an RF supply 122 along a cable 124 through an RF match 120 into processing chamber 100 during substrate processing.
  • the RF current may travel along a path 140 to couple with the gas reactant to create plasma within a confined chamber volume ! ! 0 for processing substrate 106, which is positioned above a bottom electrode i 04.
  • Set of confinement rings 1 12 may be made of a conductive material such as silicon, polysilicon, silicon carbide, boron carbide, ceramic, aluminum, and the like. Usually, set of confinement rings 1 12 may be configured to surround the periphery of confined chamber volume i 10 in which a plasma is to form. In addition to set of confinement rings 112, the periphery of confined chamber volume 1 10 may also be defined by upper electrode 102, bottom electrode 104, insulator rings 1 16 and 118, an edge ring 1 14 and a lower electrode support structure 128.
  • set of confinement rings ! 12 may include a plurality of slots (such as slots 126a. 126b, and 126c).
  • the neutral gas species may traverse from confined chamber volume 110 into an external region 132 (outside chamber volume) of processing chamber 100 before being pumped out of processing chamber 100 via a turbo pump 134.
  • Those skilled in the arts are aware that imeonfmed plasma may cause an unstable processing environment, ideally, the plasma formed during substrate processing is formed within confined chamber volume 110. However, under certain conditions, plasma may be ignited outside of confined chamber volume 1 10. in an example, given a high pressurized env ironment, the neut ⁇ al gas species (which are being exhausted from confined chamber volume 1 10 into external region 132 of processing chamber 100) may encounter an RF field magnetic field. The existence of Rt- current in the outside chamber may cause the formation of ⁇ nconfined piasr ⁇ a 150.
  • a RF return path 142 may include the RF return current flowing along the Inside of set of confinement rings 112 At point 152, the RF return current may flow along the outside of confinement rings ⁇ 12 to bridge with the inside wail surface of processing chamber 100 From the chamber wall, the RF return current may follow a set of stiaps 130 to iowet electrode support sttueture 128 From the surface of lower electrode support structure 128. the RF return current may flow back to RF source 122 via RF match 120
  • a set of straps may be employed to prox ide a low impedance path, thereby creating a shorter RF return path than path 142 (that follows the chamber wall), as shown in Fig 2,
  • a set of straps 230 may be employed to couple a confinement ring 212 to a low er electrode support structure 228 within a processing chamber 200
  • the RF return current may encounter a ⁇ et of straps 230
  • the RF return current may bridge to lower electrode support structure 228 via set of straps 230 From lower electrode support structure 228. the RF return current may continue onward to a RF source 222 via a RF match 220.
  • the RF return current path 242 is significantly shorter than path 142 of Fig 1.
  • a magnetic field RF field may be formedin a region 244 between set of straps 230 and confinement ring 212, As a result, plasma mas be ignited outside of the confined chamber ⁇ oiume (within region 244) ghen the right condition (such as the existence of gas reactants. a sufficiently high pressure volume, and an RF field/magnetic field)
  • Fig. i shows a simple block diagram of a capacithely-couplcd plasma processing s> stem with a processing chamber
  • FIG. 2 shows a simple block diagram of a processing chamber w ith a strap-driv en RF return path.
  • ⁇ 0014 j Hg. 3 A and 3B show, in embodiments of the invention, simple diagrams of a RF ground tetiun arrangement
  • Figs. 4. 5, 6, and 7 show , in embodiments of the invention, RF ground return arrangements foi an adjustable-gap processing chamber
  • Examples of such apparatus include a genera 1-pui pose computer and or a dedicated computing dev ice when appropriately programmed and may include a combination of a computer, computing dev ice and dedicated programmable circuits adapted for the various tasks pertaining to embodiments of the invention.
  • radio frequency (RB ground return arrangements are provided Embodiments of the im ention include establishing a short RF return path for the RF return current by providing a direct Rt- contact (via a RF contact-enabled component) between a confinement ring and a lower electrode support structure.
  • RF ground return arrangements are provided for establishing a RF return path back to the RF source whiie substantially eliminating the possibility of a magnetic field RF field being established outside of the confinement region (region as defined by the periphery of the confinement ring) hi an embodiment the RF ground return arrangements may be implemented within in a capaciively -eoupled plasma (CCP) processing system.
  • CCP capaciively -eoupled plasma
  • the RF ground return arrangements may be implemented w ithin a processing chamber with a fixed or movable lower electrode support structure, in an embodiment
  • a RF ground return arrangement may be implemented with a RF gasket
  • the RF gasket may be made of a conductive material
  • the RF gasket is m electrical contact with the confinement ring and a lower electrode support structure (such a ⁇ a giound ring)
  • the RF gasket may be relatively small and may be either compliant or non-compliant Howevei.
  • the Rr gasket in processing chamber with a movable lower electrode support structure, is configured to ha ⁇ e a shape and dimension to accommodate the movement of the ground ring as the !owe ⁇ electrode support deviseture is moved in a vertical direction
  • the shape of the RF gasket is configured to be a large curvature design (for example, an upside-down oi a sideway C-shaped flexible conductor RF gasket), theieby enabling the ground ring to maintain RF contact w ith the confinement ring.
  • the si/e of the RK gasket is at least equal to the si/e of the gap between the bottom- facing suifaee of the confinement ring and the upper-facing surface of the ground ring
  • the RF gasket is compliant, thereby enabling the shape of the RF gasket to change as the ground ring moves
  • the KK gasket is flattened.
  • the RF gasket may have more of a half-donut shape
  • the RK ground return arrangement may be implemented with a spring-loaded sliding contact arrangement
  • the spring-loaded sliding contact arrangement may include a spiing membei coupled to a confinement ring.
  • the spring member is biased toward the wall of a ground ring ⁇ n an embodiment, the spring member is in eleetiical contact with the wall of the ground ring via a contact point. I hus, as the g ⁇ ound ring moves up and down, the ground ring remains in RJF contact with the confinement ring via the spring- loaded sliding contact arrangement
  • the RF ground return arrangement may include a confinement ring with an extension
  • the extension may extend downward and is parallel to a side wall of the ground ring
  • the extension is positioned at a close proximity to the ground ring, thereby narrow ing the gap between the extension and the ground ring.
  • the proximity of the extension to the ground ring creates a large capacitance area Since impedance is inverse! j proportional to capacitance, the large capacitance area may ⁇ eate a low impedance ieturn path foi the RF ieturn current
  • Another RF ground arrangement may include a RK conductive rod in electrical contact w ith a confinement ring and a ground ring.
  • the RF conductive rod is disposed within a conductive liquid, which resides w ithin a recess area of the ground ling
  • a part of the RF conducth e rod remains in the conductive liquid of the g ⁇ ound ring
  • RF contact is maintained between the confinement ring and the gto ⁇ nd ring via the RF conductive rod to provide a low impedance path for the RK return current
  • each RK ground return arrangement provides shoiter RF teturn paths for the KK return current in compa ⁇ son to the prior art arrangements
  • each RK ground return arrangement does not encapsulate an area that is capable of creating an RK field ''magnetic field and sustaining uuconfmed plasma outside of the confinement region
  • FIG. 3 A and 3B show, in embodiments of the imentio ⁇ , sir ⁇ pie diagrams of one example of a RF ground return arrangement.
  • processing chamber 300 may be a eapacith ely-coupled piasraa processing chamber
  • Substrate 306 may be positioned above a bottom electrode 304 During substrate processing, a plasma 30S, which may be employed to etch substrate 306, may be formed between substrate 306 and an upper electrode 302.
  • Set of confinement tings 312 may include a plurality of confinement rings or may be one continuous ring
  • Set of confinement rings 312 may be made of a conductixe material such as silicon, poiysilicon. silicon carbide, boron carbide, ceramic, aiumiruurt and the like,
  • set of confinement rings 3 ! 2 may be configured to surround the periphery of a confined chamber volume 310 in which plasma 308 is to form
  • the periphery of confined chambei volume 310 may aiso he defined by upper electrode 302, bottom electrode 304, insulator rings 316 and 318. an edge ring 314 and a lower electrode support structure 328.
  • gas may flow from a gas distribution system (not shown) into confined chambet volume 310 and interact with RF eu ⁇ ent to create plasma 308, RF current may be flowing from an RF source 322 to an RF match 320 via a cable 324.
  • the RF current may (low up along a path 340 through bottom electrode 304 to interact with the gas w ithin confined, chamber volume 310 to form plasma 308
  • set of confinement rings 312 may include a plurality of slots (such as slots 326a. 326b, and 326c). The number and size of slots on set of confinement lings 312 may vary depending upon the rate of conductance required
  • the neutral gas species may traverse from confined chamber volume 310 through the slots into an external region 332 (outside chambet volume) of ptocessing chamber 300 before being pumped out of processing chamber 300 via a turbo pump 334
  • a Rt- gasket 350 may be employed to create a Rh contact between set of confinement rings 312 and lower electrode support structure 328 ⁇ such as a gtouncS ring or another stmcture electrically connected to RF source 322 ⁇
  • RF gasket 350 in an embodiment is made from a conductive material, such as stainless steel and beryllium copper, for example
  • RF gasket 350 is shown with a circular design, RF gasket 350 may have other configurations, such as a half-donut shape, a square shape, a rectangular shape, and the like.
  • the shape of the RF gasket may vary based on manufacturer's preference as Song as the Rf- gasket provides the required RF contact between set of confinement rings 312 and lower electrode support structure 328
  • RF gasket 350 creates a path 342 for the RF return current without creating a region outside of confined chamber volume 310 in winch a magnetic field or a Rf- field may be formed
  • path 342 remains at the periphery of confined chamber ⁇ n!umc 310 and effeeihely creates a Faraday shield aioimd the plasma, thereby preventing plasma unconfmement.
  • the RF ground return arrangement provides a short RF return path without encapsulating a region capable of sustaining plasma outside of confined chamber volume 310
  • the RF ground return arrangement of Figs. 3 A and 3 B may be implemented within a processing chambet with fixed lower eeectTode components
  • the Rl- ground return arrangement may be implemented as shown in Figs 4. 5, 6, and 7
  • Fig 4 shows, in an embodiment of the i mention, a RF ground return arrangement for an adjustable-gap processing chamber 400. Similar to Figs. 3A and 3B, a RF gasket 402 is employed to establish a RF contact between confinement ⁇ ng 412 and a ground ring 428 which is part of a movable lower electrode support structure
  • RF gasket 402 is made of a flexible conducth e material such as stainless steel
  • RF gasket 402 may have a half donut shape (such as the upside-down C-shape shown in Fig. 4, a sidewas C-shape RF gasket or any other curved RF gasket design!
  • the shape of RF gasket 402 may vary based on manufacturers prefeienee as long as RF contact is maintained between ground ring 428 and confinement ring 412, thereby providing a short RF return path 442 while confining plasma w ithin the confined chamber volume.
  • Hg. 5 shows in an embodiment of the invention, a simple partial diagram of an adjustable-gap processing chamber 500 with a RF g ⁇ ound return arrangement
  • the lower electrode support structure is movable.
  • t he iower electrode support structure may include a ground ring 528
  • ground ring 528 is also moving in the same direction.
  • ground ring 52S may include a recess 504 filled v. ith a ecmdueth e liquid 506, such as mercury, for example.
  • a RF conductive rod 50S Disposed within conductive liquid 506 is a RF conductive rod 50S, which is made from a conductive material such as aluminum, foi example.
  • Rh conductive rod 508 is configured at least to couple a confinement ring 512 to ground ring 528, In other words, a RSr contact is established between confinement ring 512 and ground nng 52S via RF conduct ⁇ e ⁇ od 508
  • a gasket 5 ! 0 such as an o-ring
  • a part of RF conductive rod 50S continues to be disposed within conductive liquid 506, thereby maintaining the RF contact between confinement ring 512 and ground ring 528
  • a RF return path 542 is provided for the RF return current in which the path is significantly shorte ⁇ than the pnor art while substantially preventing a region to be established in the outside chamber volume capable of sustaining a plasma.
  • Fig 6 shows, in an embodiment of the im exit ton, another RF ground return arrangement for an adjustable-gap processing chamber 600. Similar to Figs, 4 and 5, the iower electrode support structure is movable ami may include a ground ring 602 Thus, as the lower electrode support stmeture moves vertially , giound nng 602 is also mo ⁇ mg in the same direction.
  • the RF ground return arrangement includes a spring- loaded sliding contact arrangement.
  • the spring-loaded sliding contact arrangement may be made from a conducthe material, such as steel
  • the spring- loaded sliding contact arrangement may include a spring member 604
  • Spring member 604 may be a spring leaf, foi example Spring member 604 may be fixed to a confinement ring 612 at a fixed point 606
  • spring member 604 may include a contact point 608, which is biased against a surface 610 of ground ring 602.
  • ground ring 602 a iso moves up and down whiie maintaining RF contact v ⁇ ith confinement ring 612
  • a short RF return path 642 is p ⁇ o ⁇ ⁇ as the R> return current traverses aiong the inside of confinement ring 612 to ground ring 602 on its way back to the RF source
  • Kg. 7 shows, in an embodiment, another RF ground return arrangement for an adjustable-gap processing chamber 700
  • a confinement ring 712 may include an extension 702.
  • Extension 702 may be paiaMei to a side surface wall 704 of a ground ring 706, which is part of a movable lower electrode support structure
  • Extension 702 is employed to create a large capacitance area between confinement ring 712 and ground ring 706 Those skilled in the art are aw are that the capacitance is an erseiy related to the impedance Thus, the higher the capacitance value. the low er is the impedance v alue
  • extension 702 is positioned w itlu ' n close proximity to ground ting 706 since the capacitance of an area is directly proportional to the area and inverseiy proportional to the distance between extension 702 and ground ring 706 With a high capacitance, the gap ⁇ 710 ⁇ between extension 702 and ground 706 acts as a RF short and enables the RF teturn curt em to mnerse from confinement ring 712 to ground ring 706 in other words, extension 702 and ground ring 706 creates a low impedance path.
  • the RF return path 742 as provided by extension 702 (via gap 710) is preferable o ⁇ cr path 142 of prior art Fig 1
  • a shorter RF return path is provided while plasma ⁇ > confined within the confinement chamber volume
  • one or more embodiments of the present invention provide for RF ground ring arrangements configured for establishing short RK return paths while substantially preventing an RF field from being established in the outside chamber volume of the processing chambet
  • RF return paths w ith relatk ely low impedance the RK return current is more likely to traverse back to the RF source using the moie desirable RF return paths as provided by the RF ground return a ⁇ angements.
  • the RK teturn paths being kept awa> from the external tegion of the pioeessing chamber, the possibility of igniting unconfmed piasnia outside of the confined chamber volume is substantially eliminated

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.

Description

RADiIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS
BAC1CGR0UND OF THE INVEN TION
[0001] Advances in plasma processing have provided for growth in the semiconductor industry, hi today competitive market, a manufacturing company needs to be able to minimize waste and produce high quality semiconductor devices. During substrate processing, conditions of the chamber may impact substrate processing. A critical parameter that may affect the plasma processing of substrates is the flow of the radio frequency (RF) current.
[0002] To facilitate discussion., Fig. 1 shows a simple block diagram of a capacitively- coupled plasma processing system with a processing chamber 100. Consider the situation wherein, for example, a substrate 106 is being processed within processing chambei 100. To ignite the plasma for etching substrate 106, a gas may interact with an RF current. The current may flow from an RF supply 122 along a cable 124 through an RF match 120 into processing chamber 100 during substrate processing. The RF current may travel along a path 140 to couple with the gas reactant to create plasma within a confined chamber volume ! ! 0 for processing substrate 106, which is positioned above a bottom electrode i 04.
[0003] In order to control plasma formation and to protect the processing chamber walls, a set of confinement rings 112 may be employed. Set of confinement rings 1 12 may be made of a conductive material such as silicon, polysilicon, silicon carbide, boron carbide, ceramic, aluminum, and the like. Usually, set of confinement rings 1 12 may be configured to surround the periphery of confined chamber volume i 10 in which a plasma is to form. In addition to set of confinement rings 112, the periphery of confined chamber volume 1 10 may also be defined by upper electrode 102, bottom electrode 104, insulator rings 1 16 and 118, an edge ring 1 14 and a lower electrode support structure 128.
[0004] in order to exhaust the neutral gas species from the confinement region (confined chamber volume 110), set of confinement rings ! 12 may include a plurality of slots (such as slots 126a. 126b, and 126c). The neutral gas species may traverse from confined chamber volume 110 into an external region 132 (outside chamber volume) of processing chamber 100 before being pumped out of processing chamber 100 via a turbo pump 134.
[0005] Those skilled in the arts are aware that imeonfmed plasma may cause an unstable processing environment, ideally, the plasma formed during substrate processing is formed within confined chamber volume 110. However, under certain conditions, plasma may be ignited outside of confined chamber volume 1 10. in an example, given a high pressurized env ironment, the neutτal gas species (which are being exhausted from confined chamber volume 1 10 into external region 132 of processing chamber 100) may encounter an RF field magnetic field. The existence of Rt- current in the outside chamber may cause the formation of υnconfined piasrøa 150.
[0006] In a typical processing environment, the RF current flows fτom RF genet ator into confined chamber volume 1 10 Those skilled in the arts are aware that RF current flowing into processing chamber 100 usually tries to return to its RF source In a typical prior art configuration, a RF return path 142 may include the RF return current flowing along the Inside of set of confinement rings 112 At point 152, the RF return current may flow along the outside of confinement rings ϊ 12 to bridge with the inside wail surface of processing chamber 100 From the chamber wall, the RF return current may follow a set of stiaps 130 to iowet electrode support sttueture 128 From the surface of lower electrode support structure 128. the RF return current may flow back to RF source 122 via RF match 120
[0007] As can be seen from the foregoing, by following path 142. the RF current flows outside of confined chamber volume 110 on its w ay back to Rt- source 122. As a result, a magnetic field or a RF field may be generated in the outside chamber region. The existence of an RF field/magnetic field may cause unconfmed plasma 150 to be formed in externa! region 132 of processing chamber 100.
[0008] Since Rt- return current tends to seek a low impedance path, a set of straps may be employed to prox ide a low impedance path, thereby creating a shorter RF return path than path 142 (that follows the chamber wall), as shown in Fig 2, In an example, a set of straps 230 may be employed to couple a confinement ring 212 to a low er electrode support structure 228 within a processing chamber 200 Thus, whew the RF return current (flow ing along a path 242) flows along the bottom side of outer wall of confinement ring 212, the RF return current may encounter a ^et of straps 230 Since the set of straps 230 provide a lower impedance path than the outer surface of confinement ring 212, the RF return current may bridge to lower electrode support structure 228 via set of straps 230 From lower electrode support structure 228. the RF return current may continue onward to a RF source 222 via a RF match 220.
[0009] As can be appreciated from the foregoing, the RF return current path 242 is significantly shorter than path 142 of Fig 1. However. a magnetic field RF field may be formedin a region 244 between set of straps 230 and confinement ring 212, As a result, plasma mas be ignited outside of the confined chamber \oiume (within region 244) ghen the right condition (such as the existence of gas reactants. a sufficiently high pressure volume, and an RF field/magnetic field)
[0010] Accordingly, an arrangement for providing a short RF return path while preventing the ignition of unconfirmed piasraa is desirable.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
[0011] The present invention is illustrated by way of example, and not by way of limitation. ni the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which.
[0012] Fig. i shows a simple block diagram of a capacithely-couplcd plasma processing s> stem with a processing chamber
[0013] Fig. 2 shows a simple block diagram of a processing chamber w ith a strap-driv en RF return path.
{0014 j Hg. 3 A and 3B show, in embodiments of the invention, simple diagrams of a RF ground tetiun arrangement
[0015] Figs. 4. 5, 6, and 7 show , in embodiments of the invention, RF ground return arrangements foi an adjustable-gap processing chamber
DETAILED DESCRIPTION OF EMBODIMENTS
[0016] The present invention will now be described in detail with reference to a few embodiments thereof as illustrated in the accompanying draw. ings. In the following description, numerous specific details are set forth m order to provide a thorough
understanding of the present invention It will be apparent, however, to one skilled in the art. that the present invention may be practiced without some or all of these specific details In other instances, well known process steps and/or structures have not been described in detail m order to not unnecessarily obscure the present invention
[0017 ] various, embodiments are described hereinbelovv, including methods and techniques. It should he kept in mind that the invention might also co\eτ articles of manufacture that includes a computer readable medium on which computer-readable instructions for carrying out embodiments of the inventive technique are stored, I he computer readable medium may include, for example, semiconductor, magnetic, opto-magnetic. optical, or other forms of computer readable medium for storing computer readable code Futther, the invention may also co\er apparatuses for practicing embodiments of the invention. Such apparatus may include circuits, dedicated ami/or progiammable, to cairv out tasks pertaining to
embodiments of the inv ention Examples of such apparatus include a genera 1-pui pose computer and or a dedicated computing dev ice when appropriately programmed and may include a combination of a computer, computing dev ice and dedicated programmable circuits adapted for the various tasks pertaining to embodiments of the invention.
[0018] In accordance with embodiments of the present invention, radio frequency (RB ground return arrangements are provided Embodiments of the im ention include establishing a short RF return path for the RF return current by providing a direct Rt- contact (via a RF contact-enabled component) between a confinement ring and a lower electrode support structure.
[0019] In tins document, various implementations may be discussed using a single confinement ring as an example. This invention, however, is not limited to a single confinement ring and may be applied to a plasma processing system with one ot more confinement rings Instead, the discussions are meant as examples and the invention ii. not limited by the examples presented
[0026] In an embodiment of the invention, RF ground return arrangements are provided for establishing a RF return path back to the RF source whiie substantially eliminating the possibility of a magnetic field RF field being established outside of the confinement region (region as defined by the periphery of the confinement ring) hi an embodiment the RF ground return arrangements may be implemented within in a capaciively -eoupled plasma (CCP) processing system. The RF ground return arrangements may be implemented w ithin a processing chamber with a fixed or movable lower electrode support structure, in an embodiment
[0021] In one embodiment of the invention, a RF ground return arrangement may be implemented with a RF gasket The RF gasket may be made of a conductive material In an embodiment, the RF gasket is m electrical contact with the confinement ring and a lower electrode support structure (such a^ a giound ring)
[0022] For a processing chamber wit Ii a fixed lower eSectiode support structute, the RF gasket may be relatively small and may be either compliant or non-compliant Howevei. in processing chamber with a movable lower electrode support structure, the Rr gasket is configured to ha\e a shape and dimension to accommodate the movement of the ground ring as the !oweτ electrode support stiueture is moved in a vertical direction In an embodiment, the shape of the RF gasket is configured to be a large curvature design (for example, an upside-down oi a sideway C-shaped flexible conductor RF gasket), theieby enabling the ground ring to maintain RF contact w ith the confinement ring. In other words, the si/e of the RK gasket is at least equal to the si/e of the gap between the bottom- facing suifaee of the confinement ring and the upper-facing surface of the ground ring In addition, the RF gasket is compliant, thereby enabling the shape of the RF gasket to change as the ground ring moves In an example, as the ground ring mo\ es upward {narrow ing the gap between the ground ting and the confinement ring*, the KK gasket is flattened. However, when the ground ring is at the furthest distance from the confinement ring, the RF gasket may have more of a half-donut shape
[0023] In another embodiment, the RK ground return arrangement may be implemented with a spring-loaded sliding contact arrangement The spring-loaded sliding contact arrangement may include a spiing membei coupled to a confinement ring. The spring member is biased toward the wall of a ground ring ϊn an embodiment, the spring member is in eleetiical contact with the wall of the ground ring via a contact point. I hus, as the gτound ring moves up and down, the ground ring remains in RJF contact with the confinement ring via the spring- loaded sliding contact arrangement
[0024] In yet another embodiment, the RF ground return arrangement may include a confinement ring with an extension The extension may extend downward and is parallel to a side wall of the ground ring In an embodiment, the extension is positioned at a close proximity to the ground ring, thereby narrow ing the gap between the extension and the ground ring. The proximity of the extension to the ground ring creates a large capacitance area Since impedance is inverse! j proportional to capacitance, the large capacitance area may αeate a low impedance ieturn path foi the RF ieturn current
[0025] Another RF ground arrangement, in an embodiment, may include a RK conductive rod in electrical contact w ith a confinement ring and a ground ring. In an embodiment, the RF conductive rod is disposed within a conductive liquid, which resides w ithin a recess area of the ground ling Thus, when the giouml ling moves vertically, a part of the RF conducth e rod remains in the conductive liquid of the gτound ring As a result. RF contact is maintained between the confinement ring and the gtoυnd ring via the RF conductive rod to provide a low impedance path for the RK return current
[0026] As can be appreciated from the foregoing, the RF ground return arrangements provide shoiter RF teturn paths for the KK return current in compaπson to the prior art arrangements In addition, each RK ground return arrangement does not encapsulate an area that is capable of creating an RK field ''magnetic field and sustaining uuconfmed plasma outside of the confinement region [0027] The features and advantages of the present invention may be better understood with reference to the figures and discussions that follow.
[0028] Fig. 3 A and 3B show, in embodiments of the imentioπ, sirøpie diagrams of one example of a RF ground return arrangement. Consider the situation wherein, for example, a substrate 306 is being processed within a processing chamber 300 in an embodiment, processing chamber 300 may be a eapacith ely-coupled piasraa processing chamber
Substrate 306 may be positioned above a bottom electrode 304 During substrate processing, a plasma 30S, which may be employed to etch substrate 306, may be formed between substrate 306 and an upper electrode 302.
[0029] In order to control plasma formation and to protect the processing chamber wails, a set of confinement rings 312 may be employed Set of confinement tings 312 may include a plurality of confinement rings or may be one continuous ring Set of confinement rings 312 may be made of a conductixe material such as silicon, poiysilicon. silicon carbide, boron carbide, ceramic, aiumiruurt and the like,
[0030] Usually, set of confinement rings 3 ! 2 may be configured to surround the periphery of a confined chamber volume 310 in which plasma 308 is to form In addition to set of confinement tings 312 the periphery of confined chambei volume 310 may aiso he defined by upper electrode 302, bottom electrode 304, insulator rings 316 and 318. an edge ring 314 and a lower electrode support structure 328.
[0031] During substrate processing, gas may flow from a gas distribution system (not shown) into confined chambet volume 310 and interact with RF euπent to create plasma 308, RF current may be flowing from an RF source 322 to an RF match 320 via a cable 324.
From Rf match 320, the RF current may (low up along a path 340 through bottom electrode 304 to interact with the gas w ithin confined, chamber volume 310 to form plasma 308
[0032] In order to exhaust the neutiai gas species from the confinement region (confined chamber volume 310). set of confinement rings 312 may include a plurality of slots (such as slots 326a. 326b, and 326c). The number and size of slots on set of confinement lings 312 may vary depending upon the rate of conductance required The neutral gas species may traverse from confined chamber volume 310 through the slots into an external region 332 (outside chambet volume) of ptocessing chamber 300 before being pumped out of processing chamber 300 via a turbo pump 334
[0033] In the prior art, the existence of an RF OeSd outside of the confinement iegton may cause the RF current to interact with the gas teactant to ignite a plasma. I ϊnlike the prior ait, an RF ground return auangement is provided that substantially eliminates the generation of plasma outside of confined chamber volume 310.
[0034] In an embodiment, a Rt- gasket 350 (see Fig 3B) may be employed to create a Rh contact between set of confinement rings 312 and lower electrode support structure 328 {such as a gtouncS ring or another stmcture electrically connected to RF source 322} RF gasket 350, in an embodiment is made from a conductive material, such as stainless steel and beryllium copper, for example Although RF gasket 350 is shown with a circular design, RF gasket 350 may have other configurations, such as a half-donut shape, a square shape, a rectangular shape, and the like. As can be appreciated from the foregoing, the shape of the RF gasket may vary based on manufacturer's preference as Song as the Rf- gasket provides the required RF contact between set of confinement rings 312 and lower electrode support structure 328
[0035] tnlike the prior art, RF gasket 350 creates a path 342 for the RF return current without creating a region outside of confined chamber volume 310 in winch a magnetic field or a Rf- field may be formed In other words, path 342 remains at the periphery of confined chamber \n!umc 310 and effeeihely creates a Faraday shield aioimd the plasma, thereby preventing plasma unconfmement. Thus the RF ground return arrangement provides a short RF return path without encapsulating a region capable of sustaining plasma outside of confined chamber volume 310
[0036] The RF ground return arrangement of Figs. 3 A and 3 B may be implemented within a processing chambet with fixed lower eeectTode components For a processing chamber that has movable lower electrode components, the Rl- ground return arrangement may be implemented as shown in Figs 4. 5, 6, and 7
[0037] Fig 4 shows, in an embodiment of the i mention, a RF ground return arrangement for an adjustable-gap processing chamber 400. Similar to Figs. 3A and 3B, a RF gasket 402 is employed to establish a RF contact between confinement πng 412 and a ground ring 428 which is part of a movable lower electrode support structure In an embodiment, RF gasket 402 is made of a flexible conducth e material such as stainless steel In an embodiment, RF gasket 402 may have a half donut shape (such as the upside-down C-shape shown in Fig. 4, a sidewas C-shape RF gasket or any other curved RF gasket design! that has a dimension laige enough to provide a large curxature area such that when the lower electrode support structure ts moved vertically, ground ring 428 stdl remains in RF contact with confinement πng 412 Similai to RF gasket 350 of Fig 3, the shape of RF gasket 402 may vary based on manufacturers prefeienee as long as RF contact is maintained between ground ring 428 and confinement ring 412, thereby providing a short RF return path 442 while confining plasma w ithin the confined chamber volume.
[0038] Hg. 5 shows in an embodiment of the invention, a simple partial diagram of an adjustable-gap processing chamber 500 with a RF gϊound return arrangement In this configuration, the lower electrode support structure is movable. t he iower electrode support structure may include a ground ring 528 Thus, as the lower electrode support structure moves up and down, ground ring 528 is also moving in the same direction.
[0039] In an embodiment ground ring 52S may include a recess 504 filled v. ith a ecmdueth e liquid 506, such as mercury, for example. Disposed within conductive liquid 506 is a RF conductive rod 50S, which is made from a conductive material such as aluminum, foi example. In an embodiment, Rh conductive rod 508 is configured at least to couple a confinement ring 512 to ground ring 528, In other words, a RSr contact is established between confinement ring 512 and ground nng 52S via RF conductύ e τod 508 To minimize the potential of exposing conductive liquid 506 to the confined chamber volume, a gasket 5 ! 0 (such as an o-ring) may be employed
[0040 ] Thus as the confined chamber volume is adjusted by moving the lower electrode support structure vertically , a part of RF conductive rod 50S continues to be disposed within conductive liquid 506, thereby maintaining the RF contact between confinement ring 512 and ground ring 528 As a result, a RF return path 542 is provided for the RF return current in which the path is significantly shorteϊ than the pnor art while substantially preventing a region to be established in the outside chamber volume capable of sustaining a plasma.
[0041] Fig 6 shows, in an embodiment of the im exit ton, another RF ground return arrangement for an adjustable-gap processing chamber 600. Similar to Figs, 4 and 5, the iower electrode support structure is movable ami may include a ground ring 602 Thus, as the lower electrode support stmeture moves vertially , giound nng 602 is also mo\mg in the same direction.
[0042] In an embodiment of the invention, the RF ground return arrangement includes a spring- loaded sliding contact arrangement. In an embodiment, the spring-loaded sliding contact arrangement may be made from a conducthe material, such as steel The spring- loaded sliding contact arrangement may include a spring member 604 Spring member 604 may be a spring leaf, foi example Spring member 604 may be fixed to a confinement ring 612 at a fixed point 606 In an embodiment spring member 604 may include a contact point 608, which is biased against a surface 610 of ground ring 602.
[0043 ] Thus, as the lower electrode support structure is moving \erticaily. ground ring 602 aiso moves up and down whiie maintaining RF contact v\ ith confinement ring 612 With the spring-loaded sliding contact arrangement, a short RF return path 642 is pτo\ ιάεά as the R> return current traverses aiong the inside of confinement ring 612 to ground ring 602 on its way back to the RF source
[ 0044 ] Kg. 7 shows, in an embodiment, another RF ground return arrangement for an adjustable-gap processing chamber 700 In an embodiment, a confinement ring 712 may include an extension 702. Extension 702 may be paiaMei to a side surface wall 704 of a ground ring 706, which is part of a movable lower electrode support structure
[0045] Extension 702 is employed to create a large capacitance area between confinement ring 712 and ground ring 706 Those skilled in the art are aw are that the capacitance is an erseiy related to the impedance Thus, the higher the capacitance value. the low er is the impedance v alue
[ 0046] To create a high capacitance area (such as one with a capacitance of 10 to 100 nanofarods. fot example), extension 702 is positioned w itlu'n close proximity to ground ting 706 since the capacitance of an area is directly proportional to the area and inverseiy proportional to the distance between extension 702 and ground ring 706 With a high capacitance, the gap {710} between extension 702 and ground 706 acts as a RF short and enables the RF teturn curt em to mnerse from confinement ring 712 to ground ring 706 in other words, extension 702 and ground ring 706 creates a low impedance path. Since the Rf- return current tends to traverse the shortest path with the lowest impedance, the RF return path 742 as provided by extension 702 (via gap 710) is preferable o\cr path 142 of prior art Fig 1 Thus, a shorter RF return path is provided while plasma ύ> confined within the confinement chamber volume
[0047] As can be appreciated from the forgoing, one or more embodiments of the present invention provide for RF ground ring arrangements configured for establishing short RK return paths while substantially preventing an RF field from being established in the outside chamber volume of the processing chambet By creating RF return paths w ith relatk ely low impedance, the RK return current is more likely to traverse back to the RF source using the moie desirable RF return paths as provided by the RF ground return aπangements. With the RK teturn paths being kept awa> from the external tegion of the pioeessing chamber, the possibility of igniting unconfmed piasnia outside of the confined chamber volume is substantially eliminated
[0048 ] While this invention has been described in terms of several preferred embodiments, there are alterations, permutations, and equhalents. which faii within the scope of this an ention Although various examples are provided herein, it is intended that these examples be iiiustrathe and not limiting with respect to the invention, in addition, even though the inv ention is described in relation to a capackn ely-coupleci plasma (CCP) processing system, the invention may also be applied in relation to an inductively-coupled plasma processing system or a hybrid plasma processing system
[0049] Also, the title and summary are provided herein for convenience and should not be used to construe the scope of the claims herein Further, the abstract is written in a highly abbreviated form and is provided herein for coin enience and thus should not be employed to construe or limit the overall invention, which is expressed in the claims. If the term "set'' is employed herein, such term is intended to have its commonly understood mathematical meaning to cover zero. one. or more than one member. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present invcinion It Ls theiefoie intended that the following appended claims be inteipteted as including all such alterations, permutations, and equivalents as fall within the true spirit and scope of the present invention..

Claims

CLAIMS What is claimed is;
1. A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate, comprising;
a set of confinement rings, wherein said set of confinement rings is configured to surround a confined chamber volume, wherein said confined chamber volume is configured for sustaining a plasma for etching said substrate during substrate processing;
a lower electrode support structure, and
a ill- contact-enabled component, wherein said RF contact-enabled component presides a RF contact between said set of confinement rings and said lower electrode support structure such that said low impedance RF return path facilitates returning said RF current back to an RF source.
2. The RF ground τetuni arrangement of claim 1 wherein said RF contact-enabled
component is made of a conducti\e material.
3. The RF giound return arrangement of claim 2 wherein said lower electrode support structure is a fixed structure.
4 The RF ground return arrangement of claim 3 w herein said RF contact-enabled
component is a RF gasket.
5. The RF ground return arrangement of claim 2 wherein said lower electrode support structure is a movable structure and said RF contact-enabled component is a RF gasket.
6. The RF ground return arrangement of claim 5 wherein said RF gasket is compliant, thereby enabling said lower electrode support structure to remain in said RP contact with said set of confinement rings when said lower electrode support structure is moving vertically.
7. The RF giound return arrangement of claim 5 wherein said RF contact-enabled
component is a spring-loaded contact sliding arrangement, wherein said spring-loaded contact sliding arrangement includes a spring member affixed to said act of confinement rings, wherein said spring member is biased against a side wall of said lower electrode support structure and is configured to remain in contact with said lower electrode support structure via a spring contact point when said loweτ electrode support structure is mo\ing vertically.
8. The RF ground return arrangement of claim 7 wherein said spring member is a spring leaf.
9 The RF ground τetuni arrangement of claim 5 wherein said Ri- contact-enabled component is a RF rod
10. The RF ground return arrangement of claim ^ \\ herein said lower electrode support structure includes a recess filled w ith a conductiv e liquid
ϋ. The Rh gϊound return airangement of claim 10 wherein stud conductive liquid is mercury.
12 The RF ground return arrangement of claim 1 1 w herein said RF rod is disposed within said conductive liquid, thereby providing said RF contact between said set of confinement rings and said lower electrode support structure
13. The Rh ground return aπangement of claim 12 wherein a gasket is configured to prov ide a covering for said conductive liquid, thereby preventing said conductive liquid fioni escaping into said confined chamber volume when said RF τod is disposed within said conductive liquid
14. The Rh gϊound return airangement of claim 13 wherein said gasket Ls an o-ting
15. Fhe Rh ground return arrangement of claim 5 wherein said Rh contact-enabled component is an extension of said set of confinement lings
16 Fhe RF ground ieturn aπangement of claim 15 w herein said extension is parallel with a side surface area of said lower electrode support structure.
17. The Rh ground return arrangement of claim 16 wherein said extension is positioned next to said Sower electrode support structure such that a large capacitance area is created between said extension and said lower electrode support structure, thereby prov idtng said low impedance Rf- return path for said RF current back to said RF source
18. The RF ground return arrangement of claim 1 wherein said low impedance RF return path facilitates said RP current back to said RF source without enabling said RF current to generate a RF field outside of said confined chamber volume, thereby preventing
development of an unconftned plasma fτom being ignited during said pioeessing
19. The RF ground return airangement of claim 1 wherein said processing chamber is a capacitively-coupled plasma processing chamber
20. Fhe Rh ground return arrangement of claim 1 wherein said set of confinement rings is made of a conductive material
PCT/US2010/047379 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements Ceased WO2011026129A2 (en)

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KR1020217008661A KR102285582B1 (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
KR1020127005375A KR101854922B1 (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
JP2012527106A JP5745519B2 (en) 2009-08-31 2010-08-31 Radio frequency (RF) ground feedback configuration
KR1020177031995A KR20170125419A (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
KR1020207028516A KR102201934B1 (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
KR1020187012209A KR20180049208A (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
SG2012008280A SG178286A1 (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
KR1020197024870A KR102164678B1 (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
KR1020217004951A KR102240849B1 (en) 2009-08-31 2010-08-31 Radio frequency (rf) ground return arrangements
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