WO2011009303A1 - 防止半导体光放大器管芯激射的封装方法 - Google Patents

防止半导体光放大器管芯激射的封装方法 Download PDF

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Publication number
WO2011009303A1
WO2011009303A1 PCT/CN2010/070936 CN2010070936W WO2011009303A1 WO 2011009303 A1 WO2011009303 A1 WO 2011009303A1 CN 2010070936 W CN2010070936 W CN 2010070936W WO 2011009303 A1 WO2011009303 A1 WO 2011009303A1
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Prior art keywords
die
optical amplifier
semiconductor optical
lens
light
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PCT/CN2010/070936
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English (en)
French (fr)
Inventor
王莹
陈欣
周忠华
杨新民
Original Assignee
武汉华工正源光子技术有限公司
英国集成光子中心
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Priority claimed from CN200910063234A external-priority patent/CN101615762A/zh
Priority claimed from CN201010113049XA external-priority patent/CN101916793A/zh
Application filed by 武汉华工正源光子技术有限公司, 英国集成光子中心 filed Critical 武汉华工正源光子技术有限公司
Publication of WO2011009303A1 publication Critical patent/WO2011009303A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • G02B6/4208—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present invention relates to a packaging method for preventing lasing of a semiconductor optical amplifier die.
  • the package method can be used for a single polarization state semiconductor optical amplifier die, a single polarization state semiconductor optical amplifier integrated with a reflective electroabsorption modulator (SOA-REAM), a single polarization state superradiative semiconductor photodiode (SLD) die
  • SOA-REAM reflective electroabsorption modulator
  • SLD single polarization state superradiative semiconductor photodiode
  • the specific package shape is not limited to the pigtail form, and may also be a plug-in form without pigtails.
  • Method 1 see Figure 11: Mounting the die assembly 20 directly inside the TO base or the butterfly package 1, encapsulating the aspherical lens cap, the ball lens cap or the flat window lens 21, and coupling and coupling with the optical fiber 4, the fiber end face slope It is 2-10 degrees in order to minimize the reflection of light back to the die at the end of the fiber while achieving high optical coupling efficiency.
  • This packaging method is primarily suitable for devices where back reflection does not significantly affect device performance.
  • Method 2 see Figures 12 and 13: Mounting a semiconductor laser die assembly inside the TO base or the butterfly package, encapsulating the aspherical lens cap or the ball lens cap, and then mounting the corresponding wavelength of the die on the pin sleeve 9
  • the isolator 8 is coupled to the optical fiber 4 having a fiber end face inclination of 2-10 degrees.
  • the method of attaching the pin sleeve is as shown in Fig. 13, and the isolator 8 or the optical rotator 12 is used to avoid back-reflected light.
  • Method 3 mounting a semiconductor laser die assembly inside the TO base or the butterfly package, encapsulating the aspheric lens cap or the ball lens cap, and then installing the fiber isolator 13 on the optical fiber to avoid back reflected light .
  • the above method has been successfully used to package different kinds of semiconductor FP lasers, DFB/DBR Light and light detectors.
  • SOAs Semiconductor Optical Amplifiers
  • This optical amplifier has the same structure as the FP laser, but the design that resists light reflection includes a coating that resists light reflection, a slanted waveguide structure, and a window area that reduces the end reflection to less than 0.001%.
  • Packaging for semiconductor optical amplifiers requires both avoiding back-reflected light and allowing external signal light to enter the semiconductor optical amplifier. If the semiconductor optical amplifier is packaged using the three methods described above, there is the following problem: The problem of the method-package is that, as shown in FIG.
  • the light 15 emitted from the semiconductor optical amplifier die meets the end face of the fiber, or the end face of the connector, Or after the metal tube body, a part of the light will be reflected back to the semiconductor optical amplifier die 2, and the reflected light 16 returned to the semiconductor optical amplifier die can be used as a forward excitation, resulting in a semiconductor optical amplifier die Shooting phenomenon.
  • a general single-stage isolator consists of a polarizer 5, a Faraday rotator 6, and an analyzer 7.
  • the light from the left to the right arrow is converted into:
  • the polarizer When the single polarization state light emitted by the die passes through the polarizer, the emitted light is consistent with the light passing axis of the polarizer; then the Faraday rotator is rotated to convert the input light 45 °; Finally passed through the analyzer.
  • the light from the right-to-left arrow is converted into:
  • the signal light of the same wavelength as the die introduced through the optical fiber passes through the analyzer, and emits a single-stage light that is consistent with the optical axis of the analyzer; then passes through the Faraday rotator, and the polarization The state is rotated by 45 °; finally, when passing through the polarizer, since the light is perpendicular to the optical axis of the polarizer, the outgoing light intensity is zero, causing the optical fiber to be isolated from the signal light of the same wavelength as the die.
  • the outgoing light is completely coincident with the light passing axis of the polarizer.
  • the object of the present invention is to provide a single-polarization-state semiconductor optical amplifier die with a single-polarized semiconductor optical amplifier integrated with a single-polarized semiconductor optical amplifier, which is structurally simple, reliable, has no lasing effect, is easy to assemble, and has high coupling efficiency.
  • a packaging method for absorbing modulator (SOA-REAM) or single polarization superabrasive semiconductor photodiode (SLD) lasing is absorbing modulator (SOA-REAM) or single polarization superabrasive semiconductor photodiode (SLD) lasing.
  • An implementation of the object of the present invention is a packaging method for preventing lasing of a single polarization semiconductor optical amplifier die
  • the wave plate needs to have a certain area to coincide with the spacer, so that the wave plate can completely cover the light-emitting area of the semiconductor optical amplifier die, and bake at the required temperature until the glue is solidified.
  • a ⁇ /4 wave plate or a Faraday optical rotating film is interposed between the lens and the optical fiber, or between the lens and the die, and the single-polarization semiconductor optical amplifier die lasing can be successfully prevented.
  • the invention can be applied to a single polarization semiconductor optical amplifier die, a single polarization semiconductor optical amplifier Die with integrated reflective electroabsorption modulator (SOA-REAM), single-polarized super-radiative semiconductor photodiode (SLD) die package: eg butterfly package, TO, coaxial package, XMD package, BIDI package, TOSA
  • SOA-REAM reflective electroabsorption modulator
  • SLD super-radiative semiconductor photodiode
  • the package shape and the like are not limited to the pigtail form, and may also be a plug-in form without pigtails.
  • FIG. 1 is a schematic structural view of a semiconductor optical amplifier packaged by the present invention
  • FIG. 2 is a schematic view showing a state in which signal light cannot enter after a single polarization semiconductor optical amplifier package isolators
  • FIG. 3 is a schematic diagram of a single-stage isolator, FIG. For the ⁇ wave plate schematic,
  • FIG. 5 is a schematic diagram of a Faraday optical rotator
  • FIG. 6 is a structure diagram of a reflective semiconductor optical amplifier package
  • FIG. 7 is a spectrum diagram of a lasing emitted by a reflective semiconductor optical amplifier package
  • 8 is a spectrogram of the lasing emitted by the reflective semiconductor optical amplifier without encapsulating the wave plate.
  • Fig. 9 is a spectrum diagram of the lasing of the emitted light after the Faraday optical rotating film package of the reflective semiconductor optical amplifier package
  • Fig. 10 is a spectroscopy diagram of the lasing of the emitted light of the reflective semiconductor optical amplifier without the Faraday optical rotating film.
  • FIG. 11 is a structural view of a conventional packaging method
  • FIG. 12 is a structural view of a conventional packaging method
  • FIG. 13 is a schematic view of a mounting pin sleeve.
  • Figure 14 is a three-dimensional diagram of a conventional packaging method
  • Figure 15 is a schematic diagram of the stimuli of a single polarization semiconductor optical amplifier die.
  • the reason for the semiconductor optical amplifier die lasing is because the light of the same polarization state as the corresponding wavelength of the die is reflected back to the die, and the reflected light returning to the die acts as a forward excitation, so that the reflective surface and the semiconductor optical amplifier The rear end face of the die or the other end faces creates lasing.
  • the key problem is to prevent the reflected light of the semiconductor optical amplifier die from being reflected by the reflected end of the fiber end face, or the end face of the connector, or the metal tube body, and the light emitted from the optical fiber is not allowed to be introduced by the optical fiber.
  • the signal of the same wavelength of the die is isolated to ensure that the semiconductor optical amplifier can work normally. Therefore, it is necessary to select a device similar to the isolator on the optical path.
  • the device must achieve two functions: 1.
  • the light emitted by the die is prevented from returning to the die again; 2.
  • the optical fiber is introduced with the same wavelength as the die.
  • the signal light and the output light amplified by the semiconductor optical amplifier need to pass all the way, and the semiconductor optical amplifier can work normally.
  • ⁇ Wave plate and Faraday optical film have these two functions.
  • ⁇ /4 wave plates or Faraday optical rotators in packages can successfully prevent single-polarization semiconductor optical amplifier die lasing.
  • ⁇ /4 wave plates or Faraday rotators can be placed between the lens and the fiber.
  • a ⁇ /4 wave plate or a Faraday rotator can also be placed between the lens and the die.
  • a single polarization state semiconductor optical amplifier die 2 is mounted inside the TO base or the tube body 1 of any package type, and the light is emitted from the front end of the semiconductor optical amplifier die assembly 17
  • the wave plate has at least 1/3 area.
  • coincident with the gasket so that the wave plate can completely cover the laser light-emitting area, and after 20-30 minutes of baking at 120 °C, visual inspection is carried out to confirm that the bonding is firm.
  • the principle of the shot is shown in the schematic of the wave plate (see Figure 4).
  • the light of the polarization state becomes a circularly polarized light 12 after passing through the fast axis and the single polarization of the die to a / 45 ° / 4 wave plate.
  • the circularly polarized light is reflected back, it passes through the fast axis and the single polarization state of the die.
  • the lasing while allowing external signal light to enter the semiconductor optical amplifier.
  • the ⁇ /4 wave plate can be placed either between the lens and the fiber, or at other locations between the lens and the die or between the fiber, the lens, and the die.
  • the reflective semiconductor optical amplifier TO After baking the solid glue, the reflective semiconductor optical amplifier TO emits spontaneous radiation spectrum by attaching an aspherical lens cap or a spherical lens cap or a flat window lens 21, and coupling with an optical fiber 4 having an optical fiber end face inclination of 2-10 degrees. As shown in Figure 7, it is a flat, non-laser lasing spectrum; without the use of a reflective semiconductor optical amplifier die with a wave plate, the spontaneous emission spectrum emitted is shown in Figure 8, with the spectrum Obvious lasing phenomenon.
  • the returned light is exactly orthogonal to the incident light, thereby preventing lasing of the reflective semiconductor optical amplifier.
  • the light emitted by the die passes through Faraday (Faraday) optical rotation, and the spontaneous emission spectrum of the fiber-optic end face coupled with the fiber end face of 2-10 degrees, shown in Figure 9, is a flat, no laser lasing spectrum;
  • the self-radiating spectrum of the reflective semiconductor optical amplifier with the addition of the Faraday rotator 10 is shown in Fig. 10, and the spectrum has a significant lasing phenomenon.
  • Faraday optical rotators in packages is based on the isolation of the polarizer and the analyzer, which can successfully prevent the single-polarization semiconductor optical amplifier die lasing. After the emitted light passes through the Faraday rotator, the polarization state is rotated by 45. After the exiting light is reflected in any optical path between the semiconductor optical amplifier die, the lens and the optical fiber, it first passes through the Faraday rotator in the optical path, and the polarization state is rotated 45 again.
  • the single-polarization reflective semiconductor optical amplifier die is prevented from lasing while allowing external signal light to enter the semiconductor optical amplifier.
  • the Faraday rotator can be placed between the lens and the fiber, or between the lens and the die, or at other locations along the fiber, the lens, and the path between the dies.
  • the ⁇ /4 wave plate 10 or the Faraday optical film 14 of the present invention can be used at any position of the optical path between the optical fiber, the lens and the die.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Description

防止半导体光放大器管芯激射的封装方法
技术领域
本发明涉及一种防止半导体光放大器管芯激射的封装方法。该封装方法 可用于单偏振态半导体光放大器管芯，单偏振态半导体光放大器集成反射式 电吸收调制器 （SOA-REAM ) 的管芯， 单偏振态超辐射半导体光电二极管 (SLD)的管芯封装： 例如蝶形封装、 TO, 同轴封装、 XMD封装、 BIDI封装、 TOSA封装等等。 具体的封装形状不局限于尾纤形式， 还可以是没有尾纤的 插拔形式。
背 景技术
一般来说， 传统的激光器， 光探测器管芯的封装方法有三种，
方法一， 见图 11: 直接在 TO底座或者蝶形封装 1 内部贴装管芯组件 20, 封装非球透镜帽、 球透镜帽或平窗透镜 21 , 并与光纤 4连接耦合， 光 纤端面斜度为 2-10度， 以便尽量让光在光纤端面不反射回管芯， 同时达到 高的光耦合效率。这种封装方法主要适用于背向反射对器件性能影响不大的 器件。
方法二， 见图 12、 13: 在 TO底座或者蝶形封装内部贴装半导体激光器 管芯组件，封装非球透镜帽或球透镜帽， 然后在插针套 9上面贴装和管芯对 应波长的隔离器 8, 并与光纤端面斜度为 2-10度的光纤 4连接耦合。贴装插 针套的方法如图 13所示， 隔离器 8或旋光片 12用来避免背向反射光。
方法三， 在 TO底座或者蝶形封装内部贴装半导体激光器管芯组件， 封 装非球透镜帽或球透镜帽， 然后如图 14: 在光纤上安装光纤隔离器 13, 用 来避免背向反射光。
上述方法已成功用于封装不同种类的半导体 FP激光器、 DFB/DBR激 光器以及光探测器。
半导体光放大器 （Semiconductor Optical Amplifiers, SOAs)是一种使用 半导体材料作为增益介质的光放大器。 这种光放大器和 FP激光器有同样的 结构，但是有抗光反射的设计包括抗光反射的镀膜、倾斜的波导结构和窗口 区域， 这种抗反射的设计将端面反射降低到 0.001%以下。 针对半导体光放 大器的封装需要既要避免背向反射光，又要允许外部信号光进入半导体光放 大器。 如果使用上面所说的三种方法封装半导体光放大器存在以下问题： 方法一封装的问题在于， 如图 15所示， 半导体光放大器管芯发射出的 光 15在遇见光纤端面、 或者连接器端面、 或者金属管体后， 有一部分的光 会发生反射， 从而回到半导体光放大器管芯 2, 回到半导体光放大器管芯的 反射光 16可以作为一种正向激励， 导致半导体光放大器管芯激射现象。
方法二封装的问题在于， 由于采用了隔离器，可以达到防止半导体光放 大器管芯发射出的光发生反射，从而避免了单偏振态半导体光放大器管芯激 射。 按照图 3所示的隔离器的原理， 一般的单级隔离器由起偏器 5、 法拉第 旋光片 6和检偏器 7构成。其中从左到右的箭头所指光线变换为： 当管芯发 出的单偏振态光经过起偏器后， 出射光与起偏器的通光轴一致； 然后经过法 拉第旋光器， 将输入光旋转 45°； 最后通过检偏器出射。 从右到左的箭头所 指光线变换为： 通过光纤导入的与管芯同波长的信号光经过检偏器， 出射与 检偏器通光轴一致的单级光； 然后经过法拉第旋光器， 偏振态旋转 45°； 最 后经过起偏器的时候由于光与起偏器的通光轴垂直， 出射光强为 0, 造成光 纤导入与管芯同波长的信号光被隔离.使用这种方法， 必须使出射光与起偏 器的通光轴完全一致。
然而， 许多的半导体光放大器的应用， 例如反射型半导体光放大器在 WDM-PON 的应用中， 需要外部的光进入半导体光放大器被放大或者被调 制后， 出射的光耦合返回通过光纤出射。 如果使用隔离器， 隔离器可以放在 透镜与光纤之间， 也可以放在管芯与透镜之间， 如图 2所示， 当外部的光偏 振态是一个任意的方向，从右到左的箭头所指光线变换的原理，是没有光进 入半导体光放大器管芯的。
方法三存在同样的问题，使用在光纤贴装隔离器， 由于光纤导入与半导 体光放大器管芯同波长的信号光被隔离， 这种封装方法同样是不适用的。 发 明 内 容
本发明的目的是针对上述现状， 旨在提供结构筒单、 可靠、 没有激射效 应、 便于装配、 耦合效率高的防止单偏振态半导体光放大器管芯， 单偏振态 半导体光放大器集成反射式电吸收调制器（SOA-REAM )或者单偏振态超 辐射半导体光电二极管 (SLD)激射的封装方法。
本发明目的的实现方式为，防止单偏振态半导体光放大器管芯激射的封 装方法，
在 TO底座或者任意封装形式的管体内部贴装单偏振态半导体光放大器 管芯， 在半导体光放大器管芯组件 17前端出射光上面加一个垫片， 用胶将 垫片粘接到管芯组件前端， 然后将 A波片旋转 Φ = 45°后用胶粘接至垫片上，
^波片需有一定的面积与垫片重合， 使波片能完全覆盖到半导体光放大器 管芯发光区域， 在所需温度下烘烤直到固胶。
或在 TO底座或者任意封装形式的管体内部贴装单偏振态半导体光放大 器管芯组件， 封装非球透镜帽、 球透镜帽或平窗透镜， 然后在插针套上面贴 装法拉第 （ Faraday )旋光片。
本发明在封装时， 在透镜与光纤之间， 或在透镜与管芯之间装 λ/4波片 或法拉第 （Faraday )旋光片， 可以成功的防止单偏振态半导体光放大器管 芯激射。
本发明可用于单偏振态半导体光放大器管芯，单偏振态半导体光放大器 集成反射式电吸收调制器（SOA-REAM ) 的管芯， 单偏振态超辐射半导体 光电二极管 (SLD)的管芯封装： 例如蝶形封装、 TO, 同轴封装、 XMD封装、 BIDI封装、 TOSA封装等等， 具体的封装形状不局限于尾纤形式， 还可以 是没有尾纤的插拔形式。
附 图 说 明 图 1为用本发明封装半导体光放大器的结构示意图， 图 2 为单偏振态半导体光放大器封装隔离器后信号光无法进入的状态 示意图， 图 3为单级隔离器原理示意图， 图 4为^波片原理图，
图 5为法拉第 （Faraday )旋光片原理图， 图 6为反射型半导体光放大器封装^波片结构图， 图 7为反射型半导体光放大器封装^波片后发射光无激射的光谱图， 图 8为反射型半导体光放大器没有封装 ^波片前发射光有激射的光谱 图，
图 9为反射型半导体光放大器封装法拉第 （Faraday )旋光片后发射光 无激射的光谱图， 图 10为反射型半导体光放大器没有封装法拉第 （Faraday )旋光片前发 射光有激射的光谱图，
图 11为传统封装方法一结构图， 图 12为传统封装方法二结构图 ， 图 13为贴装插针套示意图， 图 14为传统封装方法三结构图理图，
图 15为单偏振态半导体光放大器管芯激射原理图。
具体实施方式
由于半导体光放大器管芯激射的原因是因为与管芯对应波长同样偏振 态方向的光反射回了管芯， 回到管芯的反射光作为一种正向激励，使得反射 面和半导体光放大器管芯后端面或者是与其它的端面， 产生了激射现象。
由上述分析可知，关键的问题就是阻止半导体光放大器管芯出射光在遇 见光纤端面、或者连接器端面、或者金属管体后的反射光和出射光形成了谐 振； 同时不让由光纤导入的与管芯同波长的信号被隔绝， 保证半导体光放大 器可以正常工作。 因此需要在光路上选取一种类似隔离器的器件， 这种器件 必须达到两个功能： 1、 对由管芯发出的光， 阻止其再次返回管芯； 2、 光纤 导入的与管芯同波长的信号光和通过半导体光放大器放大的输出光需要全 部通过， 半导体光放大器可以正常工作。 ^波片和法拉第 （Faraday )旋光 片有这两个功能。
在封装中使用 λ/4波片或者法拉第（Faraday )旋光片可以成功的防止单 偏振态半导体光放大器管芯激射， λ/4波片或者法拉第旋光片既可以放在透 镜与光纤之间， λ/4波片或者法拉第旋光片也可以放在透镜与管芯之间。
参照图 1、 6,在 TO底座或者任意封装形式的管体 1内部贴装单偏振态 半导体光放大器管芯 2, 在半导体光放大器管芯组件 17前端出射光上面加
/
一个垫片 19,用胶将垫片粘接到管芯组件前端，然后将 /4波片 18旋转 = 45° 后用胶粘接至垫片 19上， ^波片至少有 1/3的面积与垫片重合， 使波片能 完全覆盖到激光器发光区域， 在 120°C烘烤 20-30分钟固胶后目检， 确认粘 接牢靠。 射的原理见波片原理图 （见图 4 ), 半导体光放大器出射的单偏振态的光， 通过快轴与管芯出射的单偏振态成 = 45° 11 的 /4波片后发生相位延迟， 相 位延迟 = (2m + 1 / 2 , 即 /2的奇数倍， 结果是， 半导体光放大器出射的单
/
偏振态的光， 通过快轴与管芯出射的单偏振成 = 45°的 /4波片后， 变成圓 偏振光 12。 当圓偏振光被反射回来， 再通过快轴与管芯出射的单偏振态成
Φ = 45°的 /4波片后发生相位延迟， 相位延迟 = 后变成回射的光与管芯 发出的单偏振光正交的单偏振光 13, 实现对半导体光放大器出射的单偏振
激射， 同时允许外部信号光进入半导体光放大器。
λ/4波片既可以放在透镜与光纤之间， 也可以放在透镜与管芯之间或光 纤、 透镜以及管芯之间的光路的其它位置。
烘烤固胶后，反射型半导体光放大器 TO通过贴装非球透镜帽或者球透 镜帽或平窗透镜 21 , 并与光纤端面斜度为 2-10度的光纤 4耦合后出射的自 发辐射光谱图如图 7所示， 是一种平坦的， 无激光激射的光谱； 而没有利用 加^波片的反射型半导体光放大器管芯， 出射的自发辐射光谱如图 8所示， 光谱带有明显的激射现象。
参照图 1、 3、 13, TO底座或者任意封装形式的管体内部贴装单偏振态 半导体光放大器管芯组件， 封装非球透镜帽、 球透镜帽或平窗透镜 21 , 然 后在插针套上面贴装法拉第 （Faraday )旋光片 12, 烘烤固胶后目检， 确认 粘接牢固， 最后将贴装了法拉第 （Faraday )旋光片的插针套 3放在非球帽、 球透镜帽或平窗透镜 21上面， 利用旋光片的旋光原理（见图 5 ), 将入射光 旋转 α = 45。， 这样返回的光旋转 2α = 90。。 即返回的光与入射的光刚好正交， 从而防止了反射型半导体光放大器的激射情况。 管芯出射的光通过法拉第 ( Faraday )旋光片， 并与光纤端面斜度为 2-10度的光纤 4耦合后出射的自 发辐射光谱图如图 9所示， 是一种平坦的， 无激光激射的光谱； 而没有利用 加法拉第旋光片 10的反射型半导体光放大器， 出射的自发辐射光谱如图 10 所示， 光谱带有明显的激射现象。
在封装中使用法拉第 （Faraday )旋光片是在隔离器的基础上除掉了起 偏器和检偏器，其可以成功的防止单偏振态半导体光放大器管芯激射的原理 是， 当管芯出射的光经过法拉第旋光片后， 偏振态旋转 45。， 出射光在半导 体光放大器管芯、透镜和光纤之间的任意光路中被反射后， 首先经过光路中 的法拉第旋光片， 偏振态又被旋转 45。， 则相对管芯出射光一定的偏振态， 回射的光与发射光的振动方向正交，从而实现对半导体光放大器出射的单偏 振态的光和反射光进行隔离的目的。防止了单偏振态反射型半导体光放大器 管芯发生激射， 同时允许外部信号光进入半导体光放大器。
法拉第旋光片既可以放在透镜与光纤之间， 也可以放在透镜与管芯之 间， 或光纤、 透镜以及管芯之间的光路的其它位置。 在光纤、 透镜以及管芯之间的光路的任何位置均可采用本发明的使用 λ/4波片 10或者法拉第 （Faraday )旋光片 14两种封装方法。

Claims

权 利 要 求 书
1、 防止单偏振态半导体光放大器管芯激射的封装方法， 其特征在于在 TO底座或者任意封装形式的管体内部贴装单偏振态半导体光放大器管芯， 在半导体光放大器管芯组件前端出射光上面加一个垫片，用胶将垫片粘接到 管芯组件前端， 然后将 /4波片旋转 = 45°后用胶粘接至垫片上， /4波片需 有一定的面积与垫片重合，使波片能完全覆盖到单偏振态半导体光放大器管 芯发光区域， 在所需温度下烘烤直到固胶。
或在 TO底座或者任意封装形式的管体内部贴装单偏振态半导体光放大 器管芯组件， 封装非球透镜帽、 球透镜帽或平窗透镜， 然后在插针套上面贴 装法拉第 Faraday旋光片。
2、 根据权利要求 1所述的防止半导体光放大器管芯激射的封装方法， 其特征在于 λ/4波片既可以放在透镜与光纤之间、 也可以放在透镜与管芯之 间或光纤、 透镜以及管芯之间的光路的其它位置。
3、 根据权利要求 1所述的防止半导体光放大器管芯激射的封装方法， 其特征在于法拉第旋光片既可以放在透镜与光纤之间、也可以放在或透镜与 管芯之间或光纤、 透镜以及管芯之间的光路的其它位置。
PCT/CN2010/070936 2009-07-22 2010-03-09 防止半导体光放大器管芯激射的封装方法 WO2011009303A1 (zh)

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