WO2011005008A2

WO2011005008A2 - Substrate for the deposition of a deposition apparatus, film-forming method, and method for manufacturing an organic electroluminescence display device using the substrate for deposition

Info

Publication number: WO2011005008A2
Application number: PCT/KR2010/004390
Authority: WO
Inventors: 노재상; 홍원의
Original assignee: 주식회사 엔씰텍
Priority date: 2009-07-10
Filing date: 2010-07-06
Publication date: 2011-01-13
Also published as: TW201108408A; KR20110005530A; WO2011005008A3

Abstract

The present invention provides a substrate for the deposition of a deposition apparatus, a film-forming method, and a method for manufacturing an organic electroluminescence display device using the substrate for deposition, comprising: providing a substrate; forming a conductive layer for joule heating on the substrate; forming a deposition material layer on the substrate containing the conductive layer for joule heating; and applying electric fields to the conductive layer for joule heating to joule heat the deposition material layer. Consequently, the present invention has the effects of providing a film-forming method which is advantageous in manufacturing large devices.

Description

A substrate for deposition of a deposition apparatus, a film formation method using the deposition substrate, and a method of manufacturing an organic light emitting display device

The present invention relates to a film formation method using a deposition substrate of a vapor deposition apparatus, and more particularly to a film deposition method for depositing a constant film by Joule heating by applying an electric field to the conductive layer.

Among the flat panel display devices, the organic light emitting display device has a high response time with a response speed of 1 ms or less, low power consumption, and self-luminous light, so there is no problem in viewing angle, and thus it is advantageous as a moving image display medium regardless of the size of the device. . In addition, low-temperature manufacturing is possible, and the manufacturing process is simple based on the existing semiconductor process technology has attracted attention as a next-generation flat panel display device in the future.

Formation of the thin film of the flat panel display or the organic light emitting display device can be broadly divided into a high molecular type device using a wet process and a low molecular type device using a deposition process according to the materials and processes used.

For example, in the method of forming the polymer or the low molecular light emitting layer, in the inkjet printing method, materials of organic layers other than the light emitting layer are limited, and there is a need to form a structure for inkjet printing on the substrate.

In addition, when the light emitting layer is formed by a deposition process, a separate metal mask is used. As the size of the flat panel display increases, the size of the metal mask must increase in size, and the metal mask sags as the size increases. There is a problem that occurs, it is difficult to manufacture a large device.

1 is a schematic cross-sectional view of a deposition apparatus having a deposition mask.

Referring to FIG. 1, in order to deposit a thin film of an organic light emitting display device, for example, an organic film layer including a light emitting layer by using a mask 1, a thin film deposition container provided in a vacuum chamber 2 is provided. The frame 4 coupled with the mask is installed on the side corresponding to the) and the object 5 on which the thin film is to be formed is mounted. In addition, the magnet unit 6 for driving the mask 1 supported on the frame 4 to the object 5 on which the thin film is to be formed is driven on the upper portion of the mask 1 to form the thin film or the like. To be in close contact with (5). In this state, the operation of the thin film deposition container 3 causes the material attached thereto to be deposited on the object 5.

However, as described above, in the formation of the thin film by the deposition apparatus having the deposition mask, the deposition mask should be enlarged as the flat panel display device becomes larger. In this case, the mask may be formed due to the deflection of the mask. It is difficult to manufacture a large device because the alignment between the object and the object is difficult.

Accordingly, an object of the present invention is to solve all the disadvantages and problems of the prior art as described above, and an object of the present invention is to provide a new film forming method, which is advantageous for manufacturing a large device.

In order to achieve the object as described above, the present invention is a substrate; Joule heating exothermic conductive layer formed on the substrate; And a deposition material layer formed on an entire surface of the substrate including the joule heating exothermic conductive layer.

The present invention also provides a substrate for deposition of a deposition apparatus, wherein the heating conductive layer for heating the joule is patterned according to the shape of a film formed by the deposition apparatus.

In addition, the present invention provides a substrate, forming a heating conductive layer for Joule heating on the substrate, forming a material layer for deposition on the entire surface of the substrate including the heating conductive layer for Joule heating, the Joule heating A film forming method is provided by applying an electric field to a heat generating conductive layer to Joule heat the deposition material layer.

In another aspect, the present invention provides a film forming method characterized in that the heating conductive layer for Joule heating is patterned corresponding to the shape of the film formed by the deposition apparatus.

In another aspect, the present invention provides a film forming method characterized in that the joule heating of the material layer for deposition is a material layer for deposition in a region corresponding to the heating conductive layer for heating the joule.

In another aspect, the present invention provides a film forming method characterized in that the deposition material of the deposition material layer in the region corresponding to the heat generating conductive layer for Joule heating is evaporated.

The present invention also provides a first substrate; Forming a first electrode layer on the first substrate; Forming a pixel definition layer on the first electrode layer; An opening for exposing a portion of the first electrode layer on the pixel definition layer; Forming an organic layer on the first electrode layer and including an emission layer; The method of manufacturing an organic light emitting display device including forming a second electrode layer on the organic layer, wherein at least one layer of the organic light emitting display device includes a second substrate corresponding to the first substrate. Providing a heat generating conductive layer for heating the first joule on the second substrate, forming a first material layer for depositing on the entire surface of the second substrate including the heat generating conductive layer for heating the first joule, A method of manufacturing an organic light emitting display device is provided by applying an electric field to a heat generating conductive layer for heating a first joule to form a joule heating of the first deposition material layer.

In addition, the present invention is a semiconductor layer comprising a channel region and a source / drain region on the first substrate; A gate electrode corresponding to the channel region of the semiconductor layer; And forming a thin film transistor having a source / drain electrode electrically connected to the semiconductor layer, wherein the gate electrode or the source / drain electrode of the thin film transistor includes a third substrate corresponding to the first substrate. Providing a heat generating conductive layer for heating the second joule on the third substrate, forming a second material layer for depositing on the entire surface of the third substrate including the heat generating conductive layer for heating the second joule, A method of manufacturing an organic light emitting display device is provided by applying an electric field to a heat generating conductive layer for heating a second joule to Joule heating the second material layer for deposition.

In addition, the present invention provides a method of manufacturing an organic light emitting display device, wherein the joule heating of the deposition material layer is a deposition material layer in a region corresponding to the heating conductive layer for heating the joule.

In addition, the present invention provides a method of manufacturing an organic light emitting display device, characterized in that the deposition material of the deposition material layer in the region corresponding to the heat generating conductive layer for Joule heating is evaporated.

In addition, the present invention is characterized in that the shape of the heat generating conductive layer for heating the first joule is patterned corresponding to the shape of the organic film layer, the first deposition material layer is an organic electric field, characterized in that using the material of the organic film layer. A method of manufacturing a light emitting display device is provided.

In addition, the present invention is characterized in that the shape of the heat generating conductive layer for heating the first joule is patterned corresponding to the shape of the first electrode layer, the material layer for the first deposition using the material of the first electrode layer. A method of manufacturing an organic light emitting display device is provided.

In addition, in the present invention, the shape of the second conductive heating layer for heating the joule is patterned corresponding to the shape of the gate electrode, and the second deposition material layer is an organic electric field using a material of the gate electrode. A method of manufacturing a light emitting display device is provided.

In addition, the present invention is characterized in that the shape of the heat generating conductive layer for heating the second joule is patterned corresponding to the shape of the source / drain electrode, the second deposition material layer is characterized in that using the material of the source / drain electrode. A manufacturing method of an organic light emitting display device is provided.

Therefore, the present invention has the effect of providing a film forming method which is advantageous for the production of large sized devices.

In addition, the present invention has an effect that can provide a method for patterning during film formation without a lithography process or a separate shadow mask during the fabrication of the device.

In addition, the present invention has the effect of forming a film within a relatively short time as compared with the conventional film forming method.

1 is a cross-sectional view schematically showing a deposition apparatus having a deposition mask;

2 to 4 are cross-sectional views showing a schematic configuration of a substrate for deposition of a deposition apparatus according to the present invention;

5 and 6 is a schematic cross-sectional view showing a film forming method using a deposition substrate according to the present invention,

7 is a cross-sectional view illustrating an organic light emitting display device having a general structure;

8 and 9 are schematic cross-sectional views illustrating a process of forming an organic film layer of the organic light emitting display device of FIG. 7 using the deposition substrate according to the present invention.

100, 300: Substrate

110a: heat generating conductive layer for joule heating 120: layered material layer

130. 200: element substrate 210: buffer layer

220a: source region 220b: drain region

221: channel region 230: gate insulating film

231: gate electrode 240: interlayer insulating film

150a: source electrode 150b: drain electrode

260: inorganic film 270: organic film

280: first electrode layer 281: pixel defining layer

291 an organic film layer 292 a second electrode

Details of the above objects and technical configurations and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention. In addition, in the drawings, the length, thickness, etc. of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

2 to 4 are cross-sectional views showing a schematic configuration of a substrate for deposition of a deposition apparatus according to the present invention. In this case, only the configuration of the deposition substrate for convenience of description, the deposition substrate may be located in the vacuum chamber.

First, referring to FIGS. 2 and 3, a heating conductive layer material 110 for Joule heating is formed on a substrate 100 such as glass, ceramic, or plastic, and patterned to form the heating conductive layer 110a for Joule heating. To form.

The joule heating exothermic conductive layer 110a generates joule heat by applying an electric field to the electrode, and evaporates the deposition material through the generated joule heat, which will be described later.

Forming the heating conductive layer material 110 for joule heating on the substrate 100 is a well-known film forming method of low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, PECVD (plasma enhanced chemical vapor deposition), sputtering, vacuum deposition ( It can be formed by a method such as vacuum evaporation, it is not limited to the method of forming the heating conductive layer material 110 for Joule heating in the present invention.

In addition, the material of the heating conductive layer material 110 for joule heating may use a metal or a metal alloy. The metal or metal alloy may be, for example, molybdenum (Mo), titanium (Ti), chromium (Cr), or molybdenum tungsten (MoW), but in the present invention, the heating conductive layer material 110 for joule heating. ) Is not limited to the material.

In addition, forming the joule heating exothermic conductive layer 110a by patterning the joule heating exothermic conductive layer material 110 may be performed by a known photolithography process.

At this time, in the present invention, the forming of the joule heating exothermic conductive layer 110a is patterned corresponding to the shape of a predetermined film formed by the deposition apparatus according to the present invention.

For example, assuming that the gate electrode is formed using the deposition apparatus according to the present invention, the shape of the heating conductive layer for heating the joule is patterned corresponding to the shape of the gate electrode, or the deposition apparatus according to the present invention. Assuming that the organic film layer is formed using, the shape of the joule heating exothermic conductive layer is patterned corresponding to the shape of the organic film layer.

In this case, in the present invention, the shape of the predetermined film may mean the shape of the planar structure of the predetermined film.

4, the deposition material layer 120 is formed on the entire surface of the substrate 100 including the joule heating exothermic conductive layer 110a.

The deposition material layer 120 may be formed by a method such as low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, plasma enhanced chemical vapor deposition (PECVD), sputtering, vacuum evaporation, or the like. In the present invention, the method of forming the deposition material layer 120 is not limited.

The deposition material layer 120 corresponds to a material of a predetermined film formed by the deposition apparatus according to the present invention. For example, it is assumed that the gate electrode is formed using the deposition apparatus according to the present invention. The wear material layer 120 may be formed using the material of the gate electrode, or assuming that the organic film layer is formed using the deposition apparatus according to the present invention, the deposition material layer 120 may be formed of the organic material. It is formed using the material of the membrane layer.

That is, the material of the material layer 120 for deposition varies depending on the object to be deposited using the deposition apparatus according to the present invention, and may be an organic film, an inorganic film, or a metal film.

5 and 6 are schematic cross-sectional views showing a film formation method using a deposition substrate according to the present invention. In this case, for convenience of description, only the configuration of the deposition substrate and the element substrate are shown, and the film forming process may be performed in a vacuum chamber.

First, referring to FIG. 5, the deposition substrate according to the present invention is aligned to correspond to the device substrate 130.

In this case, as described above, the joule heating exothermic conductive layer 110a is formed on the substrate 100, and the deposition material layer is formed on the entire surface of the substrate 100 including the joule heating exothermic conductive layer. Is formed.

Thereafter, an electric field is applied to the heating conductive layer 110a for joule heating of the deposition substrate. The joule heating of the deposition material layer 120 is performed by applying an electric field to the heating conductive layer 110a for joule heating.

In this case, the deposition material layer 120 which is Joule heated by the applied electric field corresponds to the region 120a corresponding to the Joule heating exothermic conductive layer 110a, and thus, the joule heating exothermic conductive layer 110a. The deposition material in the region 120a corresponding to the evaporates.

6, the evaporated deposition material may be deposited on the device substrate 130 to form a predetermined film 140 to be formed.

The joule heating means heating by using heat generated by resistance when current flows through the conductor. The amount of energy per unit time applied to the conductive layer by Joule heating due to the application of the electric field may be represented by the following equation.

W = V × I

In the above formula, W is the amount of energy per unit time of Joule heating, V is the voltage across the conductive layer, and I is the current, respectively.

It can be seen from the above equation that as the voltage V increases and / or the current I increases, the amount of energy per unit time applied to the conductive layer by Joule heating increases. When the temperature of the conductive layer is increased by Joule heating, heat conduction occurs to the conductive layer, that is, the material layer for deposition located on the heating conductive layer for heating the joule, and the heat generating conductive layer 110 for heating the joule due to the transferred heat. The evaporation material of the region 120a corresponding to the evaporation may be evaporated.

Application of the electric field to the heating conductive layer 110a for joule heating may generate high heat by Joule heating sufficient to induce the evaporation of the region 120a corresponding to the heating conductor layer 110a for heating the joule. This is done by applying energy of power density. Since the application of the electric field is determined by various factors such as resistance, length and thickness of the heating conductive layer 110a for joule heating, it is difficult to specify the electric field.

However, for smooth evaporation, the temperature applied to the region 120a corresponding to the joule heating exothermic conductive layer 110a is preferably 10 ° C. or more higher than the melting point of the deposition material. It is preferable that the melting point is less than 110a). For this purpose, it is preferable to apply an electric field of about 1 kw / cm 2 to 1,000 kw / cm 2.

If the temperature is less than the melting point of the deposition material it may be difficult to evaporate the deposition material, and if the temperature exceeds the melting point of the heating conductive layer 110a for Joule heating, it is difficult to deposit an accurate pattern. do.

That is, in the present invention, the vapor deposition material to be evaporated should be a vapor deposition material in a region corresponding to the joule heating exothermic conductive layer, but the joule heating when the temperature exceeds the melting point of the exothermic conductive layer for joule heating Since the heat generating conductive layer evaporates, the composition, thickness, and shape of the pattern to be formed become uneven, and in a severe case, the conductive layer cannot tolerate and is destroyed.

In this case, the applied current may be a direct current or an alternating current, and an application time of the electric field may be 1 / 1000,000 to 100 seconds, preferably 1 / 1,000,000 to 10 seconds, more preferably 1 / 1,000,000 to 1 second. .

The application of this electric field can be repeated several times in regular or irregular units. Thus, the total heat treatment time may be larger than the above electric field application time, but this is at least a very short time compared with the conventional deposition methods.

In addition, in the conventional film forming method, the thin film is formed by a deposition apparatus having a deposition mask, and as the size of the flat panel display becomes larger, the deposition mask should also be enlarged. Difficult to arrange a large device due to difficult alignment between objects, but when the deposition process using the deposition substrate according to the present invention is performed, the substrate sag even if the flat panel display is enlarged because the thickness of the deposition substrate is thick. Etc. do not occur, and therefore a large sized device can be manufactured.

7 is a cross-sectional view illustrating an organic light emitting display device having a general structure.

Referring to FIG. 7, a buffer layer 210 having a predetermined thickness is formed on a front surface of the transparent insulating substrate 200 by plasma-enhanced chemical vapor deposition (PECVD). In this case, the buffer layer 210 prevents the diffusion of impurities in the transparent insulating substrate 200 during the crystallization process of the amorphous silicon layer formed in a subsequent process.

An amorphous silicon layer (not shown), which is a semiconductor layer, is deposited on the buffer layer 210 at a predetermined thickness. Subsequently, the amorphous silicon layer is crystallized by using Excimer Laser Annealing (ELA), Sequential Lateral Solidification (SLS), Metal Induced Crystallization (MIC) or Metal Induced Lateral Crystallization (MIC), and patterned by photolithography. The semiconductor layer pattern in a pixel is formed.

A gate insulating layer 230 is formed on the entire surface of the substrate including the semiconductor layer pattern. In this case, the gate insulating film 230 may be formed of a silicon oxide film (SiO ₂ ), a silicon nitride film (SiN _x ), or a double layer thereof.

The gate electrode 231 is formed in a predetermined region corresponding to the channel region 221 of the semiconductor layer pattern on the gate insulating layer 230. The gate electrode 231 may be formed of one selected from the group consisting of aluminum (Al), aluminum alloy (Al-alloy), molybdenum (Mo), and molybdenum alloy (Mo-alloy).

Next, an impurity is implanted into the semiconductor layer pattern 220 using the gate electrode 231 as an ion implantation mask to form a source / drain region 220a 220b. In this case, the ion implantation process is performed using n + or p + impurities as a dopant.

Next, an interlayer insulating film 240 having a predetermined thickness is formed on the entire surface. In this case, the interlayer insulating film 240 may be formed of a silicon oxide film (SiO ₂ ), a silicon nitride film (SiN _x ), or a double layer thereof.

Next, the interlayer insulating layer 240 and the gate insulating layer 230 are etched by a photolithography process to form contact holes exposing the source /

drain regions

220a and 220b.

Next, source /

drain electrodes

250a and 250b connected to the source /

drain regions

220a and 220b are formed. In this case, in forming the source /

drain electrodes

250a and 250b, the source / drain electrode material may be selected from the group consisting of Mo, W, MoW, AlNd, Ti, Al, Al alloys, Ag, and Ag alloys. To form a single layer of a single material, or to reduce the wiring resistance, a two-layer structure of Mo, Al, or Ag, or a multi-layer structure of low resistance material, that is, Mo / Al / Mo, MoW / Al-Nd / MoW, Ti / Al / Ti, Mo / Ag / Mo and Mo / Ag-alloy / Mo and the like formed in one laminated structure selected from the group consisting of.

An insulating layer may be positioned on the source /

drain electrodes

250a and 250b, and the insulating layer may be an inorganic layer 260, an organic layer 270, or a double layer thereof. In addition, a first electrode layer 280 connected through a via hole in the insulating layer is disposed on the insulating layer.

The first electrode layer 280 may be provided as a transparent electrode in the case of the bottom emission type and a reflective electrode in the case of the top emission type. When the first electrode layer is used as a transparent electrode, it may be provided as one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (TO) and zinc oxide (ZnO), and a reflective electrode. When used as a Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr and a reflective film formed of any one selected from the group consisting of these compounds, thereafter ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), TO (Tin Oxide) and ZnO (Zinc Oxide) may be formed by laminating a transparent electrode with one material selected from the group consisting of.

In addition, the first electrode layer 280 may be formed in a stacked structure of the lower electrode layer 280a, the reflective electrode layer 280b, and the upper electrode layer 280c in the case of a top emission type.

The lower electrode layer 280a may be formed of one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (TO), and zinc oxide (ZnO). At this time, the lower electrode layer 280a is formed to have a thickness of 50 to 100Å. If the thickness of the lower electrode layer 280a is less than or equal to 50 GPa, it is difficult to secure uniformity. If the thickness of the lower electrode is less than 100 GPa, the adhesive strength is weakened due to the stress of the lower electrode layer itself.

The reflective electrode layer 280b may be formed using one material selected from the group consisting of Al, Al alloys, Ag, and Ag alloys, and at this time, the thickness of the reflective electrode layer 280b may be 900 to 2000 μs. Can be. If the thickness is 900Å or less, a part of the light is transmitted, and about 1000Å is the minimum thickness that light does not transmit. In addition, when it is 2000 kPa or more, it is not preferable in terms of cost or process time.

In this case, the reflective electrode layer 280b may act as a light reflection to increase luminance and light efficiency.

The upper electrode layer 280c may be formed of one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (TO), and zinc oxide (ZnO). At this time, the thickness of the upper electrode layer 280c is formed to 50 ~ 100Å. If the thickness of the upper electrode layer 280c is less than or equal to 50 μs, the uniformity of the thin film cannot be guaranteed. If the thickness of the upper electrode layer 280c is less than or equal to 100 μs, the reflectance is particularly lower in the blue region by 10% to 15% due to the interference effect.

Subsequently, an insulating film is formed on the first electrode layer 280. In this case, the insulating layer may be a pixel defined layer 281.

The pixel definition layer 281 may be made of polyacrylates, epoxy resins, phenolic resins, polyamides resins, polyimides resins, and unsaturated polys. Unsaturated polyesters resin, poly (phenylenethers) resin, polyphenylenesulfide resin (poly (phenylenesulfides) resin) and benzocyclobutene (benzocyclobutene (BCB)) It can be formed of a material.

In this case, the pixel defining layer 281 includes an opening 281a exposing a part of the first electrode layer.

Subsequently, an organic layer 291 is formed on the first electrode layer exposed by the opening 281a and includes a light emitting layer. Then, a second electrode 292 is formed on the organic layer 291. do.

Specifically, the organic layer 291 includes a light emitting layer, and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. And no limitations with regard to matter.

As a hole transporting material for forming the hole transporting layer, N, N'-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine {N, N'-di (naphthalene-1-yl) -N , N'-diphenyl-benzidine: α-NPB}, N, N'-bis (3-methylphenyl) -N, N'-diphenyl- [1,1'-biphenyl] -4,4'-diamine ( TPD) and the like can be used. And the film thickness of the hole transport layer can be formed in the range of 10 to 50nm. If it is out of the thickness range of the hole transport layer, the hole injection characteristics are deteriorated, which is not preferable.

In addition to the hole transport material, a dopant capable of emitting light with respect to electron-hole bonds may be added to the hole transport layer, and such a dopant may be 4- (dicyanomethylene) -2-tert-butyl-6- (1,1, 7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (4- (dicyanomethylene) -2-t-butyl-6- (1,1,7,7-tetramethyljulolidyl-9-enyl) -4H -pyran: DCJTB), Coumarin 6, Rubrene, DCM, DCJTB, phenylene (Perylene), quinacridone and the like, the content of the total weight of the material for forming the hole transport layer 0.1 to 5% by weight is used. In this way, when the dopant is added when forming the hole transport layer, the emission color may be adjusted according to the type and content of the dopant, and the thermal stability of the hole transport layer may be improved to improve the life of the device.

In addition, the hole injection layer may be formed using a starbust amine compound, and the thickness of the hole injection layer may be formed to 30 to 100 nm. When the thickness of the hole injection layer is out of the range, the hole injection property is poor, which is not preferable. Through the hole injection layer, the contact resistance between the counter electrode and the hole transport layer may be reduced, and the hole transporting ability of the anode electrode may be improved, thereby improving overall device characteristics.

The material for forming the light emitting layer of the present invention is not particularly limited, and specific examples thereof include CBP (4,4'-bis (carbazol-9-yl) -biphenyl).

The light emitting layer of the present invention may further contain a dopant capable of emitting light with respect to electron-hole coupling like the above-described hole transport layer, wherein the dopant type and content are about the same level as that of the hole transport layer, and the film of the light emitting layer The thickness is preferably in the range of 10 to 40 nm.

As the electron transporting material for forming the electron transporting layer, tris (8-quinolinolate) -aluminum (tris (8-quinolinolate) -aluminum: Alq 3) and Almq 3 are used. It may further contain a dopant capable of emitting light with respect to hole bonding. At this time, the type and content of the dopant is almost the same level as the case of the hole transport layer, the film thickness of the electron transport layer may be in the range of 30 to 100nm. If the electron transport layer is out of the thickness range, the efficiency is lowered and the driving voltage is increased, which is not preferable.

A hole barrier layer HBL may be further formed between the emission layer and the electron transport layer. Here, the hole barrier layer serves to prevent the excitons formed from the phosphorescent material from moving to the electron transport layer or to prevent the holes from moving to the electron transport layer, and BAlq may be used as the hole barrier layer forming material.

The electron injection layer may be formed of a material consisting of LiF, the thickness thereof may be formed in the range of 0.1 to 10nm. If it is out of the thickness range of the electron injection layer, the driving voltage increases, which is not preferable.

The second electrode 292 formed on the organic layer is formed of a reflective type in the case of the bottom emission type, and is formed of Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and alloys thereof in the reflective type. It can be formed of any one material selected from the group consisting of.

In addition, when the second electrode 292 formed on the organic layer is a top emission type, the second electrode 292 has a structure in which a transflective cathode is formed or a transmissive cathode is laminated after the transflective cathode is formed, and the transflective cathode is Li, Ca, Using any one material selected from the group consisting of LiF / Ca, LiF / Al, Al, Mg and Mg alloy can be formed by forming a thin to a thickness of 5 to 30nm, the transmissive cathode after forming the transflective cathode The method of forming the mold is performed by forming a semi-transmissive cathode using any one material selected from the group consisting of metals having a small work function, that is, Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and Mg alloys. After that, a film using ITO, IZO (Indium Zinc Oxide), etc. having low resistance is additionally formed. In this case, when the thickness of the transflective cathode is less than 5 nm, electron injection is not possible at low voltage, and when the thickness of the transflective cathode is 30 nm or more, the transmittance is remarkably low, which is not preferable. The total thickness of the transflective cathode and the transmissive cathode is preferably 10 to 400 nm in thickness.

Referring to FIG. 8, an electric field is applied to the Joule heating exothermic conductive layer 310a of the substrate 300 on which the deposition material layer 320 is formed on the Joule heating exothermic conductive layer 310a.

In this case, since the organic film layer of the organic light emitting display device of FIG. 7 is formed by using the substrate for deposition according to the present invention, the shape of the heating conductive layer 310a for heating the joule is determined by the shape of the organic film layer. Correspondingly patterned.

In addition, the deposition material layer 320 is formed using a material of the organic layer.

As described above, the organic layer includes a light emitting layer and may further include any one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer. Thus, for example, when forming a light emitting layer The shape of the joule heating exothermic conductive layer 310a is patterned to correspond to the shape of the light emitting layer, and the deposition material layer 320 is formed using the material of the light emitting layer.

In this case, the deposition material layer 320 which is Joule heated by the applied electric field corresponds to the region 320a corresponding to the Joule heating exothermic conductive layer 310a, and thus, the joule heating exothermic conductive layer 310a. Evaporation material in the region 320a corresponding to

Subsequently, referring to FIG. 9, the evaporated deposition material may be deposited on the first electrode layer exposed by the opening formed in the pixel definition layer 281 to form an organic layer.

8 and 9 illustrate only the process of forming the organic layer of FIG. 7, the gate electrode 231, the source /

drain electrodes

250a and 250b, or the first electrode layer 280 of FIG. 7. ) Can be formed by the method as described above.

In this case, when the gate electrode 231 is formed, the shape of the joule heating exothermic conductive layer 310a is patterned to correspond to the shape of the gate electrode, and the deposition material layer 320 is formed of the material of the gate electrode. To form.

In addition, when the source /

drain electrodes

250a and 250b are formed, the shape of the joule heating exothermic conductive layer 310a is patterned to correspond to the shape of the source / drain electrodes, and the deposition material layer 320 is It is formed using the material of the source / drain electrodes.

In addition, when the first electrode layer 280 is formed, the shape of the Joule heating exothermic conductive layer 310a is patterned to correspond to the shape of the first electrode layer, and the deposition material layer 320 is the first electrode layer. It is formed using the material of.

Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Claims

Board;

Joule heating exothermic conductive layer formed on the substrate; And

And a deposition material layer formed on an entire surface of the substrate including the joule heating exothermic layer.
The method of claim 1,

The substrate material is a substrate for deposition of the deposition apparatus, characterized in that the glass, ceramic or plastic.
The method of claim 1,

The material of the heating conductive layer for heating the joule is a substrate for deposition of a deposition apparatus, characterized in that the metal or metal alloy.
The method of claim 1,

The joule heating exothermic conductive layer is patterned according to the shape of the film formed by the deposition apparatus.
The method of claim 1,

The material of the deposition material layer is an organic film, an inorganic film or a metal film deposition substrate, characterized in that the metal film.
Providing a substrate,

Forming a heating conductive layer for joule heating on the substrate,

Forming a deposition material layer on the entire surface of the substrate including the joule heating exothermic conductive layer,

And applying the electric field to the exothermic conductive layer for heating the joule to joule heat the vapor deposition material layer.
The method of claim 6,

The joule heating exothermic conductive layer is patterned according to the shape of the film formed by the deposition apparatus.
The method of claim 6,

Joule heating the vapor deposition material layer is a deposition material layer, characterized in that the deposition material layer in a region corresponding to the heat generation conductive layer for heating the joule.
The method of claim 8,

The deposition method of claim 1, wherein the deposition material of the deposition material layer corresponding to the heating conductive layer for heating the joule is evaporated.
The method of claim 8,

The temperature applied to the deposition material layer corresponding to the heating conductive layer for heating the joule is 10 ° C. or higher than the melting point of the vapor deposition material and is below the melting point of the heating conductive layer for heating the joule. Way.
The method of claim 6,

A film forming method, comprising applying an electric field of 1 kw / cm 2 to 1,000 kw / cm 2 to the heating conductive layer for heating the joule.
The method of claim 6,

The deposition time of the electric field is characterized in that 1 / 1,000,000 to 100 seconds.
The method of claim 6,

The deposition time of the electric field is characterized in that 1 / 1,000,000 to 1 second.
Providing a first substrate; Forming a first electrode layer on the first substrate; Forming a pixel definition layer on the first electrode layer; An opening for exposing a portion of the first electrode layer on the pixel definition layer; Forming an organic layer on the first electrode layer and including an emission layer; In the manufacturing method of the organic light emitting display device comprising forming a second electrode layer on the organic film layer,

At least one layer of the organic light emitting display device

Providing a second substrate corresponding to the first substrate,

Forming a heating conductive layer for heating the first joule on the second substrate,

Forming a first deposition material layer on the entire surface of the second substrate including the first joule heating exothermic layer,

The method of manufacturing an organic light emitting display device according to claim 1, wherein the first deposition material layer is subjected to Joule heating by applying an electric field to the heating conductive layer for heating the first joule.
The method of claim 14,

A semiconductor layer having a channel region and a source / drain region on the first substrate; A gate electrode corresponding to the channel region of the semiconductor layer; And forming a thin film transistor having a source / drain electrode electrically connected to the semiconductor layer.

The gate electrode or source / drain electrode of the thin film transistor

Providing a third substrate corresponding to the first substrate,

Forming a heating conductive layer for heating the second joule on the third substrate,

Forming a second deposition material layer on the entire surface of the third substrate including the second joule heating heating conductive layer,

The method of manufacturing an organic light emitting display device according to claim 1, wherein the second deposition material layer is subjected to Joule heating by applying an electric field to the heating conductive layer for heating the second joule.
The method according to claim 14 or 15,

Joule heating of the material layer for deposition is a method for manufacturing an organic light emitting display device, characterized in that the material layer for deposition in a region corresponding to the heat generating conductive layer for heating the joule.
The method according to claim 14 or 15,

And depositing a material of a deposition material layer in a region corresponding to the heat generating conductive layer for heating the joule.
The method according to claim 14 or 15,

The temperature applied to the deposition material layer in the region corresponding to the heat generating conductive layer for heating the joules is 10 ° C. or higher than the melting point of the material for depositing, and the organic melting point of the heating conductive layer for heating the joules. Method of manufacturing an electroluminescent display device.
The method according to claim 14 or 15,

A method of manufacturing an organic light emitting display device, characterized in that an electric field of 1 kw / cm 2 to 1,000 kw / cm 2 is applied to the heating conductive layer for joule heating.
The method according to claim 14 or 15,

The application time of the electric field is a method of manufacturing an organic light emitting display device, characterized in that 1/1 / 000,000 to 100 seconds.
The method according to claim 14 or 15,

The application time of the electric field is a manufacturing method of an organic light emitting display device, characterized in that 1/1 / 000,000 to 1 second.
The method of claim 14,

The shape of the first joule heating exothermic conductive layer is patterned according to the shape of the organic layer, and the first deposition material layer is formed of the organic layer. Way.
The method of claim 14,

The shape of the heat generating conductive layer for heating the first joule is patterned according to the shape of the first electrode layer, and the material layer for the first deposition material uses the material of the first electrode layer. Manufacturing method.
The method of claim 15,

The shape of the second joule heating exothermic conductive layer is patterned according to the shape of the gate electrode, and the second deposition material layer is formed of a material of the gate electrode. Way.
The method of claim 15,

The shape of the heat generating conductive layer for heating the second joule is patterned to correspond to the shape of the source / drain electrodes, and the second material layer for deposition uses the material of the source / drain electrodes. Method for manufacturing a display device.