WO2010146651A1 - 光電転換器の製造方法 - Google Patents
光電転換器の製造方法 Download PDFInfo
- Publication number
- WO2010146651A1 WO2010146651A1 PCT/JP2009/060887 JP2009060887W WO2010146651A1 WO 2010146651 A1 WO2010146651 A1 WO 2010146651A1 JP 2009060887 W JP2009060887 W JP 2009060887W WO 2010146651 A1 WO2010146651 A1 WO 2010146651A1
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- WIPO (PCT)
- Prior art keywords
- conductive
- base material
- film
- polycrystalline silicon
- electrode
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 7
- 239000011247 coating layer Substances 0.000 claims description 6
- 239000000084 colloidal system Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 239000011888 foil Substances 0.000 abstract description 4
- 238000010147 laser engraving Methods 0.000 abstract description 4
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- This invention relates to a method for manufacturing a photoelectric converter.
- Patent Document 1 Various proposals have been made regarding a solar cell electrode film for forming a highly accurate electrode on a silicon-based photoelectric conversion element and a solar cell using the same (for example, Patent Document 1).
- the present invention has a simple manufacturing process and manufacturing equipment, can be manufactured with energy saving, does not require ingots, cutting and polishing, does not cause chemical corrosion, and is environmentally friendly and safe. It aims at proposing the manufacturing method of the photoelectric converter for solar cells which is favorable and has the characteristics, such as a wide range of application.
- the present invention is a method for manufacturing a photoelectric converter comprising the following steps (1) to (7).
- the surface of the base material made of a metal material having a predetermined shape is uniformly coated with a pure Si 3 N 4 lining paint to form a lining coating layer.
- the high-purity silane gas is heated under vacuum. Decomposing on the surface of the base material to form an N-type (or P-type) polycrystalline silicon film layer on the surface of the lining coating layer (3) Forming a polycrystalline silicon thin film using a CVD process (4)
- the base A conductive tank is engraved with a laser from the back side of the material, and the diffraction grating is processed.
- a conductive colloid having low resistance is applied to the tank-shaped diffraction grating electrode to form a conductive tank.
- An anti-erosion protective film is attached to the back surface of the base material, and the electrode is drawn out.
- a conductive bath is processed with a laser on the front surface of the polycrystalline silicon thin film according to a predetermined requirement, and then a transparent conductive film is printed.
- Using UV conductive colloid draws electrode terminal.
- the manufacturing process and manufacturing equipment are simple, energy-saving manufacturing is possible, there is no need for ingots, cutting and polishing, chemical corrosion does not occur, environmental friendliness and safety It is possible to provide a method for manufacturing a photovoltaic converter for a solar cell that has good characteristics and has a wide range of applications.
- This invention uses a metal foil as a carrier for an electromagnetic external heat source or as a lining material for an extended crystal, and forms a diffraction grating and a conductive electrode by laser engraving on the back of a battery.
- This is a new method for producing a flexible synthetic film photoelectric converter using a kind of plate-like polycrystalline silicon material by forming a flexible polycrystalline silicon battery film having a single-time and stable photoelectric efficiency.
- the new technology for processing diffraction grating electrodes by laser engraving on the above-mentioned metal base materials has advantages such as reduced back electrode light scatter, enhanced multi-wavelength diffraction, improved weak light conversion rate, and low cost. It is suitable for the production of large-area plate-like high-purity polycrystalline silicon solar cells.
- the manufacturing process and manufacturing equipment are simple, energy-saving manufacturing is possible, there is no need for ingots, cutting and polishing, there is no chemical corrosion, and environmental and safety are good. , With features such as broadness of application.
- the purity is high, the uniformity of crystal shape and resistivity and the stability of electrical performance are good, the period of use is long, the controllability of the thickness of the film layer, the stability of the electrode and the weldability It has characteristics such as good performance and low manufacturing cost.
- a diffraction grating and a conductive electrode are formed on the back surface of the battery by laser engraving to form a flexible polycrystalline silicon battery film having a one-time and stable photoelectric efficiency.
- This is a new manufacturing method for manufacturing a flexible synthetic film photoelectric converter using a kind of plate-like polycrystalline silicon material.
- the feature is the manufacturing process of flexible synthetic photoelectric film as follows.
- Polished plate or ring metal material with a thickness of 0.01 to 0.1 mm, a length of 0.1 to 1.5 m, and a width of 60 cm or less (materials such as aluminum, iron, zinc, molybdenum, alloy, and stainless steel foil are Any of them can be used) and used as a base material for photoelectric components.
- a pure Si 3 N 4 lining paint is uniformly applied to the surface of the metal base material.
- a CuIGSe lining paint copper-iridium-gallium-selenium lining paint
- the thickness of the coating film is about 0.01 mm.
- the above-described metal base material is washed, and then the above-mentioned metal base material is charged into a special cylindrical / rotary quartz base material jig. Next, it is fed into a super frequency / electromagnetic quartz deposition reactor.
- high purity hydrogen and 6N high purity silane gas are simultaneously fed (pressure is controlled to 1.5 ⁇ 10 5 atmospheric pressure or less, flow rate is controlled to 50 sccm or less).
- the high-purity silane gas is decomposed on the surface of the received metal base material (temperature 300 to 900 ° C.).
- polycrystalline silicon is deposited on the surface of the lining material, and an N-type (or P-type) polycrystalline silicon film layer is formed (the thickness of the film layer is 10 to 150 microns).
- a conductive bath is engraved with a laser from the back side of the metal base material to process the diffraction grating (the depth of the conductive bath should pass through the Si 3 N 4 lining coating layer). .
- a conductive colloid having low resistance is applied in a tank-type diffraction grating electrode. Thus, a conductive tank is formed.
- the resistivity is measured.
- an anti-erosion protective film is attached to the back surface of the metal base material, and the electrode is drawn out.
- the present invention has produced a flexible composite type photo-excited component by adopting a new plate-like high purity silicon process.
- the manufacturing process is simple, environmental and safety are good, energy is saved, there is no chemical corrosion, and there is a wide range of applications.
- the purity is high, the uniformity of crystal shape and resistivity and the stability of electrical performance are good, the period of use is long, the conversion rate is good, the area of the membrane layer is It is widely used and has features such as low production costs.
- the new technology for engraving electrodes with a metal-based material lining coating layer has advantages such as reduced back electrode light scatter, enhanced multiwavelength diffraction, and improved weak light conversion. It is suitable for mass production of inexpensive large-area plate-like high-purity polycrystalline silicon solar cells.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Abstract
【課題】製造プロセス、製造設備が簡単で、省エネルギにて製造することができ、鋳塊、切断、研磨の必要がなく、化学的な腐食が生じることがなく、環境性・安全性が良好で、応用の広範性などの特徴を有する太陽電池用の光電転換器の製造方法を提案する。 【解決手段】金属の箔板を電磁の外熱源のキャリヤーとして利用し、または、外延結晶のライニング材として利用して、また、電池の裏面にレーザー刻印にて回折格子と導電電極を形成して、一回性で光電効率の安定性を有したフレキシブル多結晶シリコン電池フィルムを形成する。
Description
この発明は光電転換器の製造方法に関する。
シリコン系光電変換素子上に、高精度の電極を形成する太陽電池用電極フィルム及びこれを利用した太陽電池に関しては種々の提案がされている（例えば、特許文献１）。
本発明は、製造プロセス、製造設備が簡単で、省エネルギにて製造することができ、鋳塊、切断、研磨の必要がなく、化学的な腐食が生じることがなく、環境性・安全性が良好で、応用の広範性などの特徴を有する太陽電池用の光電転換器の製造方法を提案することを目的にしている。
本発明は、以下の（１）～（７）の工程からなることを特徴とする光電転換器の製造方法である。
（１）所定形状の金属材料からなるベース材料の表面に均一に純Ｓｉ３Ｎ４のライニング塗料を塗装してライニング塗層を形成する
（２）真空下で高純度シランガスを加熱されている前記ベース材料の表面において分解させ、ライニング塗層の表面にＮ型（或いはＰ型）多結晶シリコン膜層を形成する
（３）ＣＶＤプロセスを利用して多結晶シリコン薄膜を形成する
（４）前記ベース材料の裏面からレーザーにて導電槽を刻印し、回折格子を加工する
（５）槽型の回折格子電極の中に、抵抗性の低い導電コロイドを塗布して導電槽を形成する
（６）前記ベース材料の裏面に耐侵食保護膜を付け、電極を引き出す
（７）前記多結晶シリコン薄膜の正面に所定の要求に従いレーザーにて導電槽を加工し、次いで、透明導電膜を印刷し、ＵＶ導電コロイドを使って、電極端子を引き出す。
（２）真空下で高純度シランガスを加熱されている前記ベース材料の表面において分解させ、ライニング塗層の表面にＮ型（或いはＰ型）多結晶シリコン膜層を形成する
（３）ＣＶＤプロセスを利用して多結晶シリコン薄膜を形成する
（４）前記ベース材料の裏面からレーザーにて導電槽を刻印し、回折格子を加工する
（５）槽型の回折格子電極の中に、抵抗性の低い導電コロイドを塗布して導電槽を形成する
（６）前記ベース材料の裏面に耐侵食保護膜を付け、電極を引き出す
（７）前記多結晶シリコン薄膜の正面に所定の要求に従いレーザーにて導電槽を加工し、次いで、透明導電膜を印刷し、ＵＶ導電コロイドを使って、電極端子を引き出す。
この発明によれば、製造プロセス、製造設備が簡単で、省エネルギにて製造することができ、鋳塊、切断、研磨の必要がなく、化学的な腐食が生じることがなく、環境性・安全性が良好で、応用の広範性などの特徴を有する太陽電池用の光電転換器の製造方法を提供することができる。
この発明は、金属の箔板を電磁の外熱源のキャリヤーとして利用し、または、外延結晶のライニング材として利用して、また、電池の裏面にレーザー刻印にて回折格子と導電電極を形成して、一回性で光電効率の安定性を有したフレキシブル多結晶シリコン電池フィルムを形成し、一種の板状多結晶シリコン材料を利用したフレキシブル合成膜光電転換器を製造する新製法である。
前述した金属ベース材料に対してレーザー刻印にて回折格子電極を加工する新しい技術は、裏電極の光散射の低減、多波長回折の増強、弱光転換率の向上などの利点を有し、安価な広い面積の板状高純度多結晶シリコンの太陽電池の生産に適している。
本発明によれば、製造プロセス、製造設備は簡単で、省エネルギにて製造することができ、鋳塊、切断、研磨の必要はなく、化学的な腐食はなく、環境性・安全性は良く、応用の広範性などの特徴を有する。
同時に、本発明によれば、純度は高く、結晶形状と抵抗率の均一性及び電気性能の安定性は良く、使用期間は長く、膜層の厚さの制御性、電極の安定性と可溶接性は良く、製造コストは安くなどの特徴も有している。
以下、本発明の製造方法をさらに詳しく説明する。
金属の箔板を電磁の外熱源のキャリヤーとして利用し、または、外延結晶のライニング材として利用する。また、同時に、電池の裏面にレーザー刻印にて回折格子と導電電極を形成し、一回性で光電効率の安定性を有するフレキシブル多結晶シリコン電池フィルムを形成させる。これによって、一種の板状多結晶シリコン材料の利用によるフレキシブル合成膜光電転換器を製造する新製法である。
その特徴は、下記通りのフレキシブル合成光電フィルムの製造プロセスである。
厚さ０．０１～０．１ｍｍ、長さ０．１～１．５ｍ、幅６０ｃｍ以下の研磨した板状或いは環状の金属材料（アルミ、鉄、亜鉛、モリブデン、合金、ステンレス箔などの材料はいずれも使用可能）を採用し、光電部品のベース材料として使用とする。
前述した金属ベース材料の表面に均一に純Ｓｉ３Ｎ４のライニング塗料を塗装する。或いは前述した金属ベース材料の表面に均一にＣｕＩＧＳｅライニング塗料（銅－イリジウム－ガリウム－セレンライニング塗料）を塗装する。いずれの場合も塗装膜の厚さは約０．０１ｍｍとする。
真空乾燥した後、前述した金属ベース材料を洗浄し、その後、特製した円柱状・回転式石英ベース材治具に前述した金属ベース材料を装入する。次いで、超周波・電磁式石英沈積反応釜へ送入する。超周波・電磁式石英沈積反応釜は直径３５０－４５０ｍｍ、高さ１．５ｍのものを用いた。次いで、０．１Ｐａ以下の真空状態にした。
超周波・電磁式石英沈積反応釜の中で、同時に高純度水素と６Ｎ高純度シランガスを送入とする（圧力は１．５×１０５大気圧以下、流量は５０ｓｃｃｍ以下迄に制御）。これにより、高純度シランガスは受熱した金属ベース材料の表面（温度３００－９００℃）で分解される。こうして、ライニング材料の表面に多結晶シリコンが沈積し、Ｎ型（或いはＰ型）多結晶シリコン膜層が形成される（膜層の厚さは１０～１５０ミクロン）。
次いで、真空自動洗浄機へ送入し、沈積された多結晶シリコンフィルムを洗浄する。
多結晶シリコンフィルムを装入された石英ベース材治具を特製した多結晶拡散炉へ送入する。ここで、重畳式ＣＶＤ気体混合沈積プロセスに従い、ＰＩＮ型多結晶シリコン薄膜を沈積させる（膜層の厚さは１０～１００ミクロン）。
真空焼きなましを行った後、真空自動洗浄機へ送入し、沈積された多結晶シリコンフィルムを洗浄する。
混合・拡散・沈積プロセス完了後、金属ベース材料の裏面からレーザーにて導電槽を刻印し、回折格子を加工する（導電槽の深さはＳｉ３Ｎ４ライニング塗層を通過するものにする）。槽型の回折格子電極の中に、抵抗性の低い導電コロイドを塗布する。こうして導電槽を形成させる。次に、抵抗率を測定する。その後、金属ベース材料の裏面に耐侵食保護膜を付け、電極を引き出す。
多結晶シリコン合成膜の正面に所定の要求に従い（内連式配列）、レーザーにて導電槽を加工する。次いで、透明導電膜を印刷し、ＵＶ導電コロイドを使って、電極端子を引き出す。
品質検査、分類、測定を経て太陽電池部品として包装する。
以上により、本発明は、新しい板状高純度シリコンプロセスの採用によるフレキシブル合成型光励起部品を生産している。
製造プロセスは簡単で、環境性・安全性は良く省エネルギで、化学的な腐食はなく、応用の広範性などの特徴を有する。
本発明の方法により製造した光電部品の性能としては、純度は高く、結晶形状と抵抗率の均一性及び電気性能の安定性は良く、使用期間は長く、転換率は良く、膜層の面積は広く、生産コストは安くなどの特徴も有している。
なお、金属ベース材料のライニング塗層に対して、レーザーにて電極を刻印する新しい技術は、裏電極の光散射の低減、多波長回折の増強、弱光転換率の向上などの利点を有し、安価な大面積の板状高純度多結晶シリコンの太陽電池の量産に適している。
Claims (1)
- 以下の（１）～（７）の工程からなることを特徴とする光電転換器の製造方法。
（１）所定形状の金属材料からなるベース材料の表面に均一に純Ｓｉ３Ｎ４のライニング塗料を塗装してライニング塗層を形成する。
（２）真空下で高純度シランガスを加熱されている前記ベース材料の表面において分解させ、ライニング塗層の表面にＮ型（或いはＰ型）多結晶シリコン膜層を形成する。
（３）ＣＶＤプロセスを利用して多結晶シリコン薄膜を形成する。
（４）前記ベース材料の裏面からレーザーにて導電槽を刻印し、回折格子を加工する。
（５）槽型の回折格子電極の中に、抵抗性の低い導電コロイドを塗布して導電槽を形成する。
（６）前記ベース材料の裏面に耐侵食保護膜を付け、電極を引き出す。
（７）前記多結晶シリコン薄膜の正面に所定の要求に従いレーザーにて導電槽を加工し、次いで、透明導電膜を印刷し、ＵＶ導電コロイドを使って、電極端子を引き出す。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2009/060887 WO2010146651A1 (ja) | 2009-06-15 | 2009-06-15 | 光電転換器の製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| PCT/JP2009/060887 WO2010146651A1 (ja) | 2009-06-15 | 2009-06-15 | 光電転換器の製造方法 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370887A (zh) * | 2020-04-24 | 2020-07-03 | 东莞立讯技术有限公司 | 板端连接器 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245079A (ja) * | 1985-08-22 | 1987-02-27 | Kanegafuchi Chem Ind Co Ltd | 太陽電池用基板およびその製法 |
| JPH03160763A (ja) * | 1989-11-17 | 1991-07-10 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| JPH04116986A (ja) * | 1990-09-07 | 1992-04-17 | Canon Inc | 集積化太陽電池 |
| JPH04154175A (ja) * | 1990-10-17 | 1992-05-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
2009
- 2009-06-15 WO PCT/JP2009/060887 patent/WO2010146651A1/ja active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6245079A (ja) * | 1985-08-22 | 1987-02-27 | Kanegafuchi Chem Ind Co Ltd | 太陽電池用基板およびその製法 |
| JPH03160763A (ja) * | 1989-11-17 | 1991-07-10 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
| JPH04116986A (ja) * | 1990-09-07 | 1992-04-17 | Canon Inc | 集積化太陽電池 |
| JPH04154175A (ja) * | 1990-10-17 | 1992-05-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111370887A (zh) * | 2020-04-24 | 2020-07-03 | 东莞立讯技术有限公司 | 板端连接器 |
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