WO2010123711A2 - Substrate cool down control - Google Patents
Substrate cool down control Download PDFInfo
- Publication number
- WO2010123711A2 WO2010123711A2 PCT/US2010/030741 US2010030741W WO2010123711A2 WO 2010123711 A2 WO2010123711 A2 WO 2010123711A2 US 2010030741 W US2010030741 W US 2010030741W WO 2010123711 A2 WO2010123711 A2 WO 2010123711A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- temperature
- cool down
- sensor
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0255—Sample holders for pyrometry; Cleaning of sample
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
- G01K11/18—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance of materials which change translucency
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0432—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
Definitions
- the present invention generally relates to substrate processing, and more particularly, to apparatus and methods for substrate cool down control.
- the fabrication of semiconductor devices upon substrates requires the deposition and etching of multiple layers of material, such as metals, dielectrics, and semiconductor materials.
- the substrate is exposed to multiple processes, such as chemical vapor deposition, physical vapor deposition, dielectric deposition, various etching processes and the like. Each process may be performed a different operating temperature.
- the substrate is moved to a number of different processing chambers, such as additional etch or deposition chambers, cool down chambers, load lock chambers, or the like.
- the process chambers are often part of an integrated system or cluster tool coupled to a central vacuum chamber.
- the central vacuum chamber usually has a transfer robot for moving the substrate from chamber to chamber.
- Commonly used processes for substrate cool down include placing a processed substrate in a cool down chamber for a predetermined amount of time.
- a typical amount of time allowed for cooling is usually greater than two minutes.
- the inventors have observed that the amount of time allowed for cooling tends to be a conservatively estimated time required for the substrate to cool down to a temperature suitable for removal of the substrate from the cool down chamber.
- the actual required substrate cooling time is often shorter than the estimated time.
- the inventors have also observed that the actual substrate cooling time required varies depending on many factors, for example, the composition of the substrate, the processes performed, and the like. Thus, by allowing the substrate to cool for unnecessarily long periods of time the overall process efficiency is reduced, particularly in situations such as automated and high volume processing.
- an apparatus for measuring the temperature of a substrate may include a cool down plate to support a substrate; a sensor to provide data corresponding to a temperature of the substrate when disposed on the cool down plate; and a computer coupled to the sensor to determine the temperature of the substrate from the sensor data.
- a method may be provided for measuring the temperature of a substrate to be cooled disposed in a process chamber, the process chamber having the substrate disposed on a cool down plate to cool the substrate within the process chamber and a sensor configured to provide data corresponding to a temperature of the substrate.
- the method may include (a) sensing, with the sensor, a first temperature of the substrate after a predetermined first time interval has elapsed; (b) comparing the first temperature to a predetermined temperature; and (c) determining whether the first temperature is greater than, equal to, or less than the predetermined temperature.
- a method to measure the temperature of a substrate may include providing a substrate having an initial temperature to a chamber, wherein the chamber comprises a cool down plate to cool the substrate thereupon, and wherein the cool down plate includes at least one sensor configured to provide data corresponding to a temperature of the substrate; sensing and recording a first temperature at a predetermined time interval; comparing the first temperature to a predetermined temperature; and determining whether the first temperature is greater than, equal to, or less than a predetermined temperature. If it is determined that the first temperature is equal to or less than the predetermined temperature then the substrate may be removed from the chamber. If it is determined that the first temperature is greater than the predetermined temperature, the temperature is continuously sensed and recorded until the sensed temperature is equal to or less than the predetermined temperature.
- a computer readable medium may be provided, having instructions stored thereon which, when executed by a controller, causes a process chamber to perform a method, the process chamber having a substrate to be cooled disposed on a cool down plate to cool the substrate within the process chamber and a sensor configured to provide data corresponding to a temperature of the substrate.
- the method may include sensing, with the sensor, a first temperature of the substrate after a predetermined first time interval has elapsed; comparing the first temperature to a predetermined temperature; and determining whether the first temperature is greater than, equal to, or less than the predetermined temperature. If it is determined that the first temperature is equal to or less than the predetermined temperature, then the substrate may be removed from the chamber. If it is determined that the first temperature is greater than the predetermined temperature, the temperature is continuously sensed and recorded until the sensed temperature is equal to or less than the predetermined temperature.
- Figure 1 depicts an apparatus suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- Figure 2 depicts a cross sectional view of a cool down plate suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- Figure 3 depicts a bottom view of a cool down plate suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- Figure 4 depicts a method to measure the temperature of a substrate in accordance with some embodiments of the present invention.
- Embodiments of the present invention generally relate to substrate processing.
- the inventive apparatus and methods provide for precise substrate cool down control for use in, for example, multi step substrate processing of integrated circuits.
- the inventive methods may advantageously provide for an accurate method of monitoring a substrate temperature as it cools, reducing the amount of time necessary to achieve the necessary substrate temperature for removal from the process chamber, and therefore, provide for a more efficient process with an improved system throughput.
- Figure 1 depicts an apparatus suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- Figure 2 depicts a cross sectional view of a cool down plate suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- Figure 3 depicts a bottom view of a cool down plate suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- Figure 4 depicts a method to measure the temperature of a substrate in accordance with some embodiments of the present invention.
- FIG. 1 illustrates one embodiment of a cool down chamber 100 in which the invention may be practiced.
- An example of an exemplary cool down chamber 100 is described in commonly assigned United States Patent Application 6,602,348 filed on September 17, 1996, entitled “Substrate Cooldown Chamber", which is incorporated herein in its entirety by reference.
- the cool down chamber 100 may be attached to the side of buffer chamber 104 of a cluster tool (not pictured) and is in fluid communication with the buffer chamber 104 through opening 106.
- the opening 106 may comprise a slit valve (not pictured) for isolating the cool down chamber 100 from the buffer chamber 104.
- An example of a suitable cluster tool may be the CENTURA ® integrated semiconductor substrate processing system, available from Applied Materials, Inc. of Santa Clara, California.
- the cool down chamber 100 comprises an inner volume 108 for cooling defined by the chamber walls 102. Disposed within the inner volume 108 is a cooling member 1 12.
- the cooling member 1 12 may be of any size and shape suitable for supporting and cooling a substrate 1 10, such as the cool down plate 200 as described below with respect to Figures 2 and 3.
- the substrate 1 10 may be any suitable substrate subject to any processing methods, such as a silicon substrate, a IN-V compound substrate, a silicon germanium (SiGe) substrate, an epi-substrate, a silicon-on-insulator (SOI) substrate, a display substrate such as a liquid crystal display (LCD), a plasma display, an electro luminescence (EL) lamp display, a light emitting diode (LED) substrate, a solar cell array, solar panel, or the like.
- the substrate 1 10 may be a semiconductor wafer (e.g., a 200 mm, 300 mm, or the like silicon wafer).
- the sensor may be any suitable sensor capable of providing data corresponding to the temperature of the substrate.
- the sensor may be an infrared (IR) sensor to measure the infrared light emitted from the substrate 110, such as the infrared sensor described with respect to Figure 3.
- the sensor may be a thermocouple, for example, such as the thermocouple described below with respect to Figure 2.
- the sensor may be a detector to detect light transmitted through the substrate 110 from a laser diode coupled to the ceiling of the chamber walls 102.
- the cooling member 1 12 may be supported by a pedestal 1 14 which is vertically movable through a bellows (not shown) connected to the bottom of the chamber walls 102.
- One or more cooling gases may be supplied from a gas source 116 through a mass flow controller 1 18 into inner volume 108 of the cool down chamber 100.
- An exhaust port 120 may be provided and coupled to a pump (not shown) via a valve 122 for exhausting the interior of the chamber 102 and facilitating maintaining a desired pressure inside the cool down chamber 100.
- a controller 124 may be coupled to various components of the cool down chamber 102. Specifically, the controller may be coupled to the sensor 132 to determine the temperature of the substrate from the data provided by the sensor 132. The controller may further record and/or analyze the substrate temperature, once determined, as discussed below.
- the controller may comprise a central processing unit (CPU) 126, a memory 128, and support circuits 130 for the CPU 126.
- the controller 124 may be one of any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
- the memory, or computer-readable medium, 128 of the CPU 126 may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, flash, or any other form of digital storage, local or remote.
- the support circuits 130 are coupled to the CPU 126 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like.
- Inventive methods as described herein may be stored in the memory 128 as software routine that may be executed or invoked to control the operation of the cool down chamber 100 in the manner described herein.
- the software routine may also be stored and/or executed by a second CPU (not shown) that is remotely located from the hardware being controlled by the CPU 126.
- FIG. 2 depicts a cross sectional view of a cool down plate 200 suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- the cool down plate 200 may comprise any suitable rigid material capable of supporting a substrate 1 10.
- the cool down plate 200 may comprise a metal such as aluminum, stainless steel, or the like.
- the cool down plate 200 be coated or comprise of a non metallic material, such as a ceramic.
- the non metallic material may be aluminum oxide, silicon carbide, silicon nitride, quartz, or the like.
- the cool down plate 200 may be cooled, for example, with a circulating coolant flowing through thermally conductive tubing, such as copper tubing, disposed proximate the substrate support surface of the cool down plate 200.
- thermally conductive tubing such as copper tubing
- the surface may be planar to make flush contact with the substrate 110.
- a number of pins or knobs may be formed on the surface of the cool down plate 200 to support the substrate 1 10 at a fixed distance above the cooling surface.
- a through hole 204 may be formed in the cool down plate 200 to allow for the coupling of a sensor 208 to detect the temperature of the substrate 1 10.
- more than one through hole 204 may be formed to allow for multiple sensors 208 to be coupled to the cool down plate 200 to allow for sensing the temperature at multiple points of the substrate 1 10.
- the bottom portion of the through hole 204 may be threaded to allow for a threaded coupling to be mated with the threads to hold a sensor securely in place.
- the sensor may be any suitable sensor capable of providing data corresponding to the temperature of the substrate.
- the sensor 208 may be a thermocouple, as depicted in Figure 2.
- the thermocouple (sensor 208) may be secured in place using a threaded coupling 210, having threads to interface with a threaded portion 206 of the through hole 204.
- a connecting line 212 couples the sensor 208 to a controller (not pictured), such as the controller 124 described above with respect to Figure 1 , to determine the temperature of the substrate 1 10 from the data provided by the sensor 208. Once determined, the temperature of the substrate 1 10 may be analyzed, as discussed below.
- the sensor 208 may be any suitable sensor, such as a thermocouple, capable of providing data over a desired temperature range.
- the temperature range may range from about 20 to about 400 degrees Celsius.
- the sensor may comprise a thermocouple having two dissimilar metals joined at one end and enclosed in a sheath, such as a metal sheath.
- the thermocouple may further comprise a non metallic material disposed atop the metal sheath.
- the non metallic material may be a ceramic, such as silicon carbide, aluminum oxide, a ceramic composite, such as a silicon - silicon carbide composite, or the like.
- the non conductive material may comprise a thickness of about 0.05 to about 0.125 inches.
- the senor 208 may be an infrared sensor.
- the infrared sensor may be coupled to the cool down plate 200 via any means suitable to secure the infrared sensor in place at a fixed distance from the substrate 1 10.
- the infrared sensor may be coupled to the body 202 via a threaded coupling, such as described above.
- the sensor may be coupled to a plate having a flange 306, which is then coupled to the cool down plate using a fastener, such as screws, pins, rivets, or the like.
- a suitable infrared sensor is a thermopile infrared sensor. Suitable infrared sensors are commercially available from a variety of sources, including Micro-Epsilon America and Mikron Infrared.
- FIG. 3 depicts a bottom view of a cool down plate 212 suitable for performing a substrate cool down in accordance with some embodiments of the present invention.
- the cool down plate 202 may comprise a cooling fluid inlet 302 in communication with a cooling fluid source, internal cooling channels 308, and a cooling fluid outlet 304.
- the cooling fluid may be either a gas or liquid.
- the cooling fluid may be chilled water.
- other coolants may be provided at the same or different temperatures.
- antifreeze e.g., ethylene glycol, propylene glycol, or the like
- heat transfer fluids may be circulated through the cool down plate 200 and may be coupled to a chiller (not shown).
- Figure 4 depicts a method for the precise cooling of a substrate 1 10 in accordance with some embodiments of the present invention.
- the method begins at 402 where a substrate 1 10 is provided to a chamber 100 for cooling.
- the substrate 110 may be disposed atop a cool down plate 200 having at least one sensor 208 coupled to it, configured to provide data corresponding to a temperature of the substrate 1 10.
- the substrate 1 10 may be any substrate that requires cooling, such as the substrates described above with respect to Figure 1.
- the chamber may be a designated cooling chamber, such as cooling chamber 100 as described above with respect to Figure 1.
- the temperature of the substrate is sensed by the sensor 208 at a predetermined time interval.
- the predetermined time interval may vary, depending on process conditions such as, the type or composition of the substrate, processes performed on the substrate, the initial temperature of the substrate, the desired final temperature of the substrate, or the like. In some embodiments, the time interval is from about 30 seconds to about 120 seconds.
- the sensed temperature may be stored on a controller 124.
- a query is made as to whether the sensed temperature is less than or equal to a predetermined temperature.
- the predetermined temperature may be dictated by a number of process conditions such as, the type or composition of the substrate, processes previously performed on the substrate, the initial temperature of the substrate, the desired final temperature of the substrate, the desired temperature of the substrate for subsequent processes, or the like.
- the substrate 1 10 may be removed manually, or may be removed via an automated process, such as via a transfer robot of a cluster tool.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012507252A JP2012525002A (en) | 2009-04-21 | 2010-04-12 | Substrate cooling control |
| CN2010800181420A CN102405510A (en) | 2009-04-21 | 2010-04-12 | Substrate Cooling Control |
| SG2011071701A SG175022A1 (en) | 2009-04-21 | 2010-04-12 | Substrate cool down control |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17112809P | 2009-04-21 | 2009-04-21 | |
| US61/171,128 | 2009-04-21 | ||
| US12/758,206 | 2010-04-12 | ||
| US12/758,206 US20100265988A1 (en) | 2009-04-21 | 2010-04-12 | Substrate cool down control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2010123711A2 true WO2010123711A2 (en) | 2010-10-28 |
| WO2010123711A3 WO2010123711A3 (en) | 2011-01-20 |
Family
ID=42980946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2010/030741 Ceased WO2010123711A2 (en) | 2009-04-21 | 2010-04-12 | Substrate cool down control |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20100265988A1 (en) |
| JP (1) | JP2012525002A (en) |
| CN (1) | CN102405510A (en) |
| SG (1) | SG175022A1 (en) |
| TW (1) | TW201039400A (en) |
| WO (1) | WO2010123711A2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006043324A1 (en) * | 2006-09-15 | 2008-03-27 | Robert Bosch Gmbh | Plug-in sensor for combined pressure and temperature measurement |
| US10557190B2 (en) * | 2013-01-24 | 2020-02-11 | Tokyo Electron Limited | Substrate processing apparatus and susceptor |
| KR102452722B1 (en) * | 2015-08-27 | 2022-10-06 | 삼성전자주식회사 | Substrate Processing Apparatus |
| US10571337B2 (en) * | 2017-05-26 | 2020-02-25 | Applied Materials, Inc. | Thermal cooling member with low temperature control |
| CN107511589B (en) * | 2017-10-17 | 2024-06-21 | 深圳华创兆业科技股份有限公司 | Multi-axis laser slot milling machine |
| JP7671558B2 (en) * | 2020-03-10 | 2025-05-02 | 東京エレクトロン株式会社 | Long-wave infrared thermal sensor for integration into track systems. |
| US11738363B2 (en) | 2021-06-07 | 2023-08-29 | Tokyo Electron Limited | Bath systems and methods thereof |
| TWI815519B (en) * | 2022-06-24 | 2023-09-11 | 樂華科技股份有限公司 | Smart wafer transfer equipment and method |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH658516A5 (en) * | 1982-08-20 | 1986-11-14 | Mettler Instrumente Ag | SCALE WITH ELECTROMAGNETIC POWER COMPENSATION. |
| JP2824003B2 (en) * | 1993-02-16 | 1998-11-11 | 大日本スクリーン製造株式会社 | Substrate temperature measurement device |
| JPH06295915A (en) * | 1993-04-09 | 1994-10-21 | F T L:Kk | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
| US6602348B1 (en) * | 1996-09-17 | 2003-08-05 | Applied Materials, Inc. | Substrate cooldown chamber |
| JP3966490B2 (en) * | 1999-02-16 | 2007-08-29 | 株式会社小松製作所 | Substrate temperature estimation apparatus and method, and substrate temperature control apparatus using the same |
| US6193811B1 (en) * | 1999-03-03 | 2001-02-27 | Applied Materials, Inc. | Method for improved chamber bake-out and cool-down |
| US7445382B2 (en) * | 2001-12-26 | 2008-11-04 | Mattson Technology Canada, Inc. | Temperature measurement and heat-treating methods and system |
| KR100479988B1 (en) * | 2002-07-24 | 2005-03-30 | 미래산업 주식회사 | Method for compensating temperature in semiconductor test handler |
| US6976782B1 (en) * | 2003-11-24 | 2005-12-20 | Lam Research Corporation | Methods and apparatus for in situ substrate temperature monitoring |
| US20060286807A1 (en) * | 2005-06-16 | 2006-12-21 | Jack Hwang | Use of active temperature control to provide emmisivity independent wafer temperature |
| US8029186B2 (en) * | 2004-11-05 | 2011-10-04 | International Business Machines Corporation | Method for thermal characterization under non-uniform heat load |
| US7642205B2 (en) * | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
| KR20070053476A (en) * | 2005-11-21 | 2007-05-25 | 삼성전자주식회사 | Cooling equipment for semiconductor manufacturing equipment |
| US7398693B2 (en) * | 2006-03-30 | 2008-07-15 | Applied Materials, Inc. | Adaptive control method for rapid thermal processing of a substrate |
| US7412346B2 (en) * | 2006-10-27 | 2008-08-12 | Intel Corporation | Real-time temperture detection during test |
| JP2008117956A (en) * | 2006-11-06 | 2008-05-22 | Daikin Ind Ltd | Substrate cooling device |
| US20090034582A1 (en) * | 2007-08-02 | 2009-02-05 | Tokyo Electron Limited Tbs Broadcast Center | Apparatus for hot plate substrate monitoring and control |
-
2010
- 2010-04-12 US US12/758,206 patent/US20100265988A1/en not_active Abandoned
- 2010-04-12 CN CN2010800181420A patent/CN102405510A/en active Pending
- 2010-04-12 JP JP2012507252A patent/JP2012525002A/en not_active Withdrawn
- 2010-04-12 SG SG2011071701A patent/SG175022A1/en unknown
- 2010-04-12 WO PCT/US2010/030741 patent/WO2010123711A2/en not_active Ceased
- 2010-04-20 TW TW099112388A patent/TW201039400A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20100265988A1 (en) | 2010-10-21 |
| TW201039400A (en) | 2010-11-01 |
| JP2012525002A (en) | 2012-10-18 |
| CN102405510A (en) | 2012-04-04 |
| WO2010123711A3 (en) | 2011-01-20 |
| SG175022A1 (en) | 2011-11-28 |
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