WO2010109465A1 - Process for sintering nanoparticles at low temperatures - Google Patents

Process for sintering nanoparticles at low temperatures Download PDF

Info

Publication number
WO2010109465A1
WO2010109465A1 PCT/IL2010/000249 IL2010000249W WO2010109465A1 WO 2010109465 A1 WO2010109465 A1 WO 2010109465A1 IL 2010000249 W IL2010000249 W IL 2010000249W WO 2010109465 A1 WO2010109465 A1 WO 2010109465A1
Authority
WO
WIPO (PCT)
Prior art keywords
process according
nps
substrate
sintering
pattern
Prior art date
Application number
PCT/IL2010/000249
Other languages
French (fr)
Inventor
Shlomo Magdassi
Michael Grouchko
Alexander Kamyshny
Original Assignee
Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. filed Critical Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd.
Priority to EP10720202A priority Critical patent/EP2411560A1/en
Priority to US13/258,766 priority patent/US20120168684A1/en
Priority to JP2012501501A priority patent/JP2012521493A/en
Priority to CN2010800189206A priority patent/CN102686777A/en
Priority to KR1020117025036A priority patent/KR20130010101A/en
Publication of WO2010109465A1 publication Critical patent/WO2010109465A1/en
Priority to IL215192A priority patent/IL215192A0/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/30Inkjet printing inks
    • C09D11/38Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/52Electrically conductive inks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/08Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/08Coating starting from inorganic powder by application of heat or pressure and heat
    • C23C24/082Coating starting from inorganic powder by application of heat or pressure and heat without intermediate formation of a liquid in the layer
    • C23C24/085Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
    • C23C24/087Coating with metal alloys or metal elements only
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283After-treatment of the printed patterns, e.g. sintering or curing methods
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1241Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
    • H05K3/125Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing

Definitions

  • the nanoparticles are sphere-like particles or substantially spherical particles of a nanometric diameter.
  • the formulation may also comprise at least one dispersant capable of promoting the formation and stabilization of the formulation of the invention, prior to application.
  • the at least one dispersant is selected amongst polyelectrolites or polymeric materials capable of forming salts with a multitude of electrolytes.
  • Representative examples of such dispersants include without limitation polycarboxylic acid esters, unsaturated polyamides, polycarboxylic acids, alkyl amine salts of polycarboxylic acids, polyacrylate dispersants, polyethyleneimine dispersants, and polyurethane dispersants.
  • the dispersant is selected without limitation from: Disperse BYK® 190, Disperse BYK® 161, Disperse BYK® 163, Disperse BYK® 164, Disperse BYK® 2000 and Disperse BYK® 2001, all of which available from BYK; EFKA® 4046 and EFKA® 4047, available from EFKA; and Solsperse® 40000 and Solsperse® 24000 available from Lubrizol; and XP 1742 available from Coatex.
  • the patterns were conductive, having a sheet resistance and resistivity of 0.078 ( ⁇ 0.005) ⁇ square and 7.8 ( ⁇ 0.5) ⁇ cm, respectively, while printed on Epson photo paper and 0.68 ( ⁇ 0.07) ⁇ square and 68 ( ⁇ 0.7) ⁇ cm, respectively, while printed on copier paper (these resistivities did not change over a period of at least 6 months).
  • resistivities only 5 times higher than that of bulk silver (in the case of the photo paper), were reported until now only for metallic patterns heated at elevated temperatures [8,11] for extended periods while with the process of the invention, the low resistivity was achieved spontaneously at room temperature.
  • the higher resistivity which was achieved on the copier paper was probably due to the surface roughness of the paper which affects the uniformity of the pattern and therefore reduces the number of percolation paths.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Ink Jet Recording Methods And Recording Media Thereof (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

A process is disclosed for low temperature sintering of a pattern on a substrate.

Description

PROCESS FOR SINTERING NANOPARTICLES AT LOW TEMPERATURES
FIELD OF THE INVENTION
This invention generally relates to a process for sintering nanoparticles by employing low temperature sintering process to obtain a continuous network.
BACKGROUND OF THE INVENTION
Fabrication of electric circuits on polymeric substrates, known as "plastic electronics", and on other sensitive substrates like paper and packages has attracted significant interest as a pathway to flexible, transparent, and low-cost devices [1,2]. InkJet technology can be utilized for direct printing of conductive patterns [3,4], overcoming disadvantages of other printing methods, such as lithography [5] and screen printing [3]. However, one of the major challenges in flexible and plastic electronics is obtaining conductive patterns at sufficiently low temperatures, which do not damage the polymeric substrate or paper.
The inks used for the fabrication of conductive patterns by inkjet printing usually contain metallic nanoparticles (NPs) and organic stabilizers (surfactants and polymers) dispersed in water or a solvent [4,6,7]. After printing and drying, a pattern composed of conducting metallic NPs capped with insulating organic stabilizers is formed. Due to the presence of insulating organic materials within the NP array, the number of percolation paths is limited and the resistivity of the printed pattern is too high. This obstacle is conventionally overcome by a post-printing sintering process, achieved by heating the printed substrate to a temperature typically higher than 15O0C, in an oven [8-11], by applying microwave [12] or photonic radiation [13,14,15] or by applying electrical voltage [16]. This sintering phenomenon is usually attributed to the reduced melting point of NPs and to their surface pre-melting [17-19].
However, due to the sensitivity of paper and plastic substrates to elevated temperatures, such treatments are usually not suitable for these substrates and therefore fabrication of flexible devices for plastic electronics is limited to a small number of heat resistant polymers such as polyimide. Obviously, there is a great need in a technology that enables sintering of metallic NPs without heating the substrate. The ability to decrease the resistivity of printed silver NPs was recently demonstrated by Zapka et al. [20,21]. The decrease in the resistivity was achieved by stamping the printed silver pattern with 0.01 to 0.27M NaCl solutions, followed by heating to 950C. Low resistivities were obtained only at the highest NaCl concentration, which was a saturated solution.
Another process for sintering of NPs was reported by Wakuda et al., [22,23] in which the printed pattern was dipped into a solvent, which apparently led to desorption of the particle stabilizer, dodecylamine. Very high resistivities were obtained.
REFERNCES
[I] S. R. Forrest, Nature 2004, 428, 911.
[2] G. Eda, G. Fanchini, M. Chhowalla, Nature Nanotechnology 2008, 3, 270.
[3] F. Gamier, R. Hajlaoui, A. Yassar, P. Srivastava, Science 1994, 265, 1684.
[4] S. Sivaramakrishnan, P. J. Chia, Y. C. Yeo, L. L. Chua, P. K. H. Ho, Nature
Materials 2007, 6, 149.
[5] I. Park, S. H. Ko, H. Pan, C. P. Grigoropoulos, A. P. Pisano, J. M. J. Frechet, E. S.
Lee, J. H. Jeong, Advanced Materials 2008, 20, 489.
[6] T. H. J. van Osch, J. Perelaer, A. W. M. de Laat, U. S. Schubert, Advanced
Materials 2008, 20, 343.
[7] D. Kim, S. Jeong, B. K. Park, J. Moon, Applied Physics Letters 2006, 89.
[8] S. B. Fuller, E. J. Wilhelm, J. A. Jacobson, Journal of Microelectromechanical
Systems 2002, 11, 54.
[9] S. Joo, D. F. Baldwin, Electronic Components and Technology Conference 2007,
212.
[10] J. B. Szczech, C. M. Megaridis, J. Zhang, D. R. Gamota, Microscale
Thermophysical Engineering 2004, 8, 327.
[II] D. Kim, J. Moon, Electrochemical and Solid State Letters 2005, 8, J30.
[12] J. Perelaer, B. J. de Gans, U. S. Schubert, Advanced Materials 2006, 18, 2101.
[13] S. H. Ko, H. Pan, C. P. Grigoropoulos, C. K. Luscombe, J. M. J. Frechet, D.
Poulikakos, Applied Physics Letters 2007, 90.
[14] N. R. Bieri, J. Chung, D. Poulikakos, C. P. Grigoropoulos, Superlattices and
Microstructures 2004, 35, 437.
[15] H-S. Kim, S.R. Dhage, D-E. Shim, H.T. Hahn, Appl. Phys. A 2009, 97, 791. [16] M.L. Allen, M. Aronniemi, T. Mattila, A. Alastalo, K. Ojanpera, M. Suhonen, H.
Seppa, Nanotechnol. 2008, 19, 175201.
[17] J. W. M. Frenken, J. F. Vanderveen, Physical Review Letters 1985, 54, 134.
[18] L. J. Lewis, P. Jensen, J. L. Barrat, Physical Review B 1997, 56, 2248.
[19] K. S. Moon, H. Dong, R. Marie, S. Pothukuchi, A. Hunt, Y. Li, C. P. Wong,
Journal of Electronic Materials 2005, 34, 168.
[20] W. Zapka, W. Voit, C. Loderer, P. Lang, Digital Fabrication 20082008, 906-911.
[21] T. F. Tadros, Colloid Stability. Wiley- VCH: Weinheim, 2007.
[22] D. Wakuda, K. Kim, K. Suganuma, Scripta materialia 2008, 59, 649-652.
[23] D. Wakuda, M. Hatamura, K. Suganuma, Cemical Physics Letters 2007, 441, 305-
308.
[24] Magdassi, S., Kamyshny, A., Aviezer, S., Grouchko, M., WO2006072959.
[25] P. A. Buffat, Materials Chemistry and Physics 2003, 81, 368.
[26] G. Palasantzas, T. Vystavel, S. A. Koch, J. T. M. De Hosson, Journal of Applied
Physics 2006, 99.
[27] M. Jose-Yacaman, C. Gutierrez- Wing, M. Miki, D. Q. Yang, K. N. Piyakis, E.
Sacher, Journal of Physical Chemistry B 2005, 109, 9703.
[28] T. Hawa, M. R. Zachariah, Journal of Aerosol Science 2006, 37, 1.
[29] Y. Chen, R. E. Palmer, J. P. Wilcoxon, Langmuir 2006, 22, 2851.
[30] P. A. Buffat, Philosophical Transactions of the Royal Society of London Series a-
Mathematical Physical and Engineering Sciences 2003, 361, 291.
[31] Hanmura, M. et al., JP20010009486.
[32] M. Yoshida, A. Mikami, T. Inoguchi, N. Miura, Phosphor Handbook, CRC Press,
2006.
SUMMARY OF THE INVENTION
In the present application a new technology is disclosed for achieving sintering of nanoparticles (NPs) at a low temperature by a sintering agent, which leads to aggregation and coalescence of the NPs on a substrate. This results in a continuous network of sintered NPs, which in the case of metallic NPs possesses high electrical conductivity. The applicability of the process of the invention in achieving a continuous network of sintered NPs having high electrical conductivity, at room temperature, on a substrate such as poly(ethylene terephthalate) (PET) is demonsarted. - A -
Thus, in one aspect of the invention there is provided a process for sintering nanoparticles (NPs) on a substrate, the process comprising contacting said nanoparticles with a sintering agent at a low temperature (at a temperature which is lower than the typical sintering temperature), thereby obtaining a sintered pattern on said substrate.
In some embodiments, the contacting of the NPs with the sintering agent on the substrate is achieved in a two-step process, involving an initial pre-treatment (pre- coating) of the substrate by the sintering agent or by the NPs. In embodiments where the substrate is pre-treated (pre-coated) with the sintering agent, subsequent thereto NPs are deposited onto the pre-treated substrate and the NPs are allowed to undergo sintering. In embodiments where the substrate is pre-treated with NPs (pre-coated to obtain a film thereof), subsequent to NP film formation, the film is treated with a sintering agent and allowed to undergo sintering.
In other embodiments, the low temperature sintering is achieved by depositing a formulation (dispersion), herein referred to as an "ink formulation" , comprising both the NPs and the sintering agent. Thus, prior to printing or depositing or contacting the substrate with the NPs and the at least one sintering agent, they are pre-formulated in an aqueous medium. Subsequent to deposition thereof onto the substrate, the solvent (typically water) evaporates, leading to an increase in the relative concentration of the sintering agent, thereby triggering sintering of the NPs.
An "aqueous ink formulation" according to the invention refers to an ink formulation, as defined, wherein the carrier or medium is water or containing water; the water may be of a variety of purities, e.g., distilled, deionized, etc. Typically, the formulation comprises water in an amount between 50 and 90% w/w of the formulation.
In some embodiments, the formulation (dispersion) comprises a low concentration of the sintering agent, namely a concentration which is below the critical coagulation concentration (CCC), so that the obtained dispersion containing the sintering agent remains stable for prolonged periods of time. The critical coagulation concentration is an indicator relating to the stability of the sintering agent in the aqueous dispersion and is the concentration of the sintering agent causing coagulation when added to the dispersion formulation. The critical coagulation concentration can be known by the description in, for example, S. Okamura et al. "Koubunshi Kagaky (Polymer Chemistry)", 17, 601, 1960. Altematively, the zeta-potential of the dispersion may be measured while adding a measured amount of the sintering agent to the dispersion so as to vary the concentration thereof in the dispersion and the coagulation concentration is determined by the point where the variation of zeta-potential is observed. The zeta-potential of the NPs dispersed in the ink formulation of the invention, prior to application, is higher than |±15|mV. Upon evaporation (fully or partially) of the aqueous medium, the zeta- potential of the NPs decreases to less than |±15|mV.
Thus, in another aspect of the invention, there is provided a process for forming a self-sintered pattern on a substrate, the process comprising inkjet printing onto said substrate an aqueous ink formulation of nanoparticles (NPs) and at least one sintering agent and permitting said pattern to dry, thereby forming a sintered pattern on said substrate.
In some embodiments, the sintering of the nanoparticles upon drying of the printed pattern is carried out at a low temperature which is typically between 5 and 1500C. hi some embodiments, the temperature is between 5 and 1000C. In further embodiments, the temperature is between 5 and 500C or between 5 and 3O0C.
In some embodiments, the sintering temperature does not exceed 500C. In other embodiments, the sintering temperature is at or around room temperature, namely between 20 and 300C.
In further embodiments, the sintering is spontaneous and does not require external application of energy, e.g., heat.
As disclosed, the pattern obtained according to the process of the invention is "self-sintered", namely it undergoes spontaneous sintering once the aqueous medium partially or fully dries. The formation of the pattern with the ink formulation, on the substrate, does not necessitate any pre- or post treatment of the substrate by either component of the ink formulation, as defined.
The aqueous ink formulation of the invention, employed in the process, typically comprises a plurality of nanoparticles, at least one sintering agent and at least one dispersant. The plurality of nanoparticles may or may not be of the same material, same shape and/or size, or same chemical and/or physical properties.
The nanoparticles are typically nanometer in size (between 1 and lOOOnm), namely each of the nanoparticles is characterized by having at least one feature which is nanometric (between 1 and lOOOnm). In some embodiments, the nanoparticles are rod- like particles having a nanometric or micrometric (above lOOOnm) length and a nanometric diameter. In other embodiments, the nanoparticles are rod-like particles of micrometric length, having on their surface at least one feature (e.g., protrusion) of a nanometric size.
In further embodiments, the nanoparticles are sphere-like particles or substantially spherical particles of a nanometric diameter.
In some embodiments, the formulation or any one process of the invention employs a mixture of nanoparticle types, each type varies from the other in size and/or shape. The mixture of nanoparticles typically comprises at least 5% nanoparticles having at least one dimension smaller than 100 run in diameter. In other embodiments, the mixture comprises at least 10% nanoparticles having at least one dimension smaller than 100 nm in diameter. In still other embodiments, the mixture comprises at least 50% nanoparticles having at least one dimension smaller than 100 nm in diameter.
The formulation may further comprise, in addition to the NPs, the sintering agent and the dispersant, at least one additive selected to enhance performance, environmental effect, aesthetic effect, or any other property of the ink formulation. For some inkjet applications, the formulation may also comprise at least one additive which permits smooth, continuous and uninterrupted inkjetting. The at least one additive may be selected and incorporated into the formulation based on any one property or characteristic of the formulation and/or its final use or application. Non-limiting examples of such additives are buffers, pH adjusting agents, biocides, sequestering agents, chelating agents, corrosion inhibitors, stabilizing agents, humectants, co- solvents, fixatives, penetrants, surfactants, colorants, magnetic materials and others.
The NPs are typically metallic nanoparticles or nanoparticles made of a metal oxide or a semiconductor material. In some embodiments, the NPs are made from a material selected from silver, copper, gold, indium, tin, iron, cobalt, platinum, titanium, titanium oxide, silicon, silicon oxide or any oxide or alloy thereof. The nanoparticles are typically smaller than 100 nm in diameter. The NPs constitute between about 1 and 80% w/w of the total weight of the formulation.
The sintering agent is a coagulant material, capable of coagulating the NPs under the specified conditions. The sintering agent is selected to cause at least one of: (i) irreversible coalescence of the closely located NPs due to neutralization of the charges at the NPs surface, (ii) screening charges at the NPs surface, (iii) desorption of the dispersing agent, or (iv) any other mechanism which enables coagulation and coalescence. The sintering agents are thus selected amongst salts, e.g., agents containing chlorides such as KCl, NaCl, MgCl2, AlCl3, LiCl, CaCl2; charged polymers, polycations, e.g., poly(diallyldimethylammonium chloride) (PDAC); polyimides, polypyrroles; polyanions; polyacrylic acid (PAA), polyethyleneimine, carboxymethyl cellulose (CMC), polynaphthalene sulfonate/formaldehyde poly(γ-glutamic acid); acids, e.g., HCl, H2SO4, HNO3, H3PO4, acetic acid, acrylic acid; and bases, e.g., ammonia, organic amines, e.g. aminomethyl propanol (AMP), NaOH and KOH. The sintering agent molar concentration is between about 0.1 to 500 mM of the formulation.
As stated above, the formulation may also comprise at least one dispersant capable of promoting the formation and stabilization of the formulation of the invention, prior to application. The at least one dispersant is selected amongst polyelectrolites or polymeric materials capable of forming salts with a multitude of electrolytes. Representative examples of such dispersants include without limitation polycarboxylic acid esters, unsaturated polyamides, polycarboxylic acids, alkyl amine salts of polycarboxylic acids, polyacrylate dispersants, polyethyleneimine dispersants, and polyurethane dispersants.
In some embdoeimnts, the dispersant is selected without limitation from: Disperse BYK® 190, Disperse BYK® 161, Disperse BYK® 163, Disperse BYK® 164, Disperse BYK® 2000 and Disperse BYK® 2001, all of which available from BYK; EFKA® 4046 and EFKA® 4047, available from EFKA; and Solsperse® 40000 and Solsperse® 24000 available from Lubrizol; and XP 1742 available from Coatex.
In further embdoeimnts, the dispersant is a surfactant, which may or may not be ionic. In some embdoeimnts, the surfacnat is cationic or anionic. In further embdoeimnts, said surfactant is non-ionic or zwitterionic. Non-limiting examples of such cationic surfactants such as didodecyldimethylammonium bromide (DDAB), CTAB, CTAC cetyl(hydroxyethyl)(dimethyl)ammonium bromide, N,jV-dimethyl-N- cetyl-Λf-(2-hydroxyethyl)ammonium chloride, anionic surfactants such as sodium dodecyl sulfate (SDS) and various unsaturated long-chain carboxylates, zwitterionic phospholipids, such as l,2-bis(10,12-tricosadiynoyl)-5«-glycero-3-phosphochline, water-soluble phosphine surfactants, such as sodium salts of sulfonated triphenylphosphine, P(W-C6H4SO3Na)3 and alkyltriphenyl-methyltrisulfonate, RC(p- C6H4SO3Na)3, alkyl polyglycol ethers, e.g., ethoxylation products of lauryl, tridecyl, oleyl, and stearyl alcohols; alkyl phenol polyglycol ethers, e.g., ethoxylation products of octyl-or nonylphenol, diisopropyl phenol, triisopropyl phenol; alkali metal or ammonium salts of alkyl, aryl or alkylaryl sulfonates, sulfates, phosphates, and the like, including sodium lauryl sulfate, sodium octylphenol glycolether sulfate, sodium dodecylbenzene sulfonate, sodium lauryldiglycol sulfate, and ammonium tri-tert-butyl phenol and penta-and octa-glycol sulfonates; sulfosuccinate salts, e.g., disodium ethoxylated nonylphenol ester of sulfosuccinic acid, disodium n-octyldecyl sulfosuccinate, sodium dioctyl sulfosuccinate, and the like.
According to some embodiments of the invention, the ink formulation or any component thereof, in accordance with any process of the invention as disclosed throughout, is applied onto a substrate by inkjet printing. As used herein, the term "inkjet printing" refers to a non- impact (non-stamping) method for producing the pattern by the deposition of ink droplets in a pixel-by-pixel manner onto the substrate. The inkjet technology which may be employed in a process of the invention for depositing ink or any component thereof onto a substrate, according to any aspect of the invention, may be any inkjet technology known in the art, including thermal inkjet printing, piezoelectric inkjet printing and continuous inkjet printing.
To permit unarrested and efficient inkjet printing of the ink formulation of the invention, in some embodiments, the viscosity of the formulation ranges from 1 cps to 60 cps at 20?C. In further embdoeimnts, the viscosity is between 1 cps and 20 cps at 20?C. hi other embodiemnts, the viscosity is between 3 cps and 15 cps at 20?C or between 4 cps and 12 cps at 20?C.
The pattern of sintered NPs is formed on a substrate by any available means and depending on the film size, complexity of structure (regular 3D structure, irregular structure, etc), the substrate and the NPs employed. In some embodiments, the pattern is formed by contacting the substrate with a solution comprising said NPs, said contacting being selected from coating, dipping, printing, ink-jetting, and by any other means.
In some embodiments, the pattern covers the full surface of a substrate. In other embodiments, the pattern is a continuous pattern on said substrate or a plurality of spaced apart patterns on said substrate.
In some embodiments, the thickness of the pattern is between 0.05 to 50 micrometers. The substrate, on top of which a sintered pattern is formed, may be any substrate which is stable or degradable (may be damaged) under the high sintering temperatures typically employed in sintering processes, but which is stable and remains undamaged under the sintering conditions of the present invention. The substrate may be of a single material, e.g., a metal, and may have a surface material which is the same or different from the substrate material itself. The substrate and/or its surface, independently of each other, may be selected from glass, polymeric films, plain paper, porous paper, non-porous paper, coated paper, flexible paper, copier paper, photo paper, glossy photopaper, semi-glossy photopaper, heavy weight matte paper, billboard paper, vinyl paper, high gloss polymeric films, transparent conductive materials, and plastic (poly(ethylene terephthalate), PET, polyacrylates (PA), polyethilene naphtalate (PEN), polyethersulphone (PES), polyethylene (PE), polyimide (PI), polypropylene (PP), polycarbonate (PC) and others. The substrate may be a porous substrate or a smooth substrate.
In some embodiments, the pattern formed prior to sintering is non-conductive. In other embodiments, the sintered pattern is conductive, e.g., having electrical conductivity greater than 1% bulk silver. In some embodiments, the electrical resistivity of the conductive pattern is lower than 1.6 10"6 Ωm.
In some embodiments, the substrate is covered with at least two disconnected patterns, which may or may not each be conductive. In some embodiments, the nanoparticle film is sintered at spaced apart regions thereby affording a pattern having regions of conductivity and regions of non-conductivity.
In some cases, the substrate is fully covered with a conductive pattern (or film), wherein conductivity may be measured at any two points along the substrate.
In another aspect of the invention, a process is provided for forming an electrically conductive pattern on a substrate, said process comprising contacting a film of metallic nanoparticles on said substrate with at least one sintering agent at room temperature, thereby obtaining an electrically conductive pattern.
Additionally, a process is provided for forming an electrically conductive pattern on a substrate, said process comprising contacting a film of at least one sintering agent on a substrate, at room temperature, with metallic nanoparticles, thereby obtaining an electrically conductive pattern In a further aspect of the invention, there is provided a process for forming an electrically conductive pattern on a substrate, said process comprising forming a film of metallic nanoparticles on said substrate, treating said film with at least one sintering agent at room temperature, i.e., at a temperature between 23 and 270C, whereby nanoparticles treated with said agent are sintered to afford a conductive pattern.
In another aspect of the invention, there is provided a process for forming a conductive pattern on a substrate, which may or may not be conductive prior to sintering, said process comprising forming a pattern on said substrate with a composition comprising metallic nanoparticles, at least one sintering agent and a liquid carrier, permitting evaporation of said liquid carrier at a low temperature, thereby leading to a sintered conductive pattern.
The invention also provides a process for printing a self-sintering pattern on a substrate, said process comprising applying onto a substrate an ink formulation according to the invention and permitting said pattern undergo sintering, as disclosed herein.
In another aspect of the invention, there is provided an article having at least one substrate, e.g., conductive, prepared according to a process of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
In order to understand the invention and to see how it may be carried out in practice, embodiments will now be described, by way of non-limiting example only, with reference to the accompanying drawings, in which:
Fig. 1 provides an illustration of the sintering process of the invention.
Fig. 2 is a SEM image of a printed drop zone (center) and the magnified images of NPs array after the contact with PDAC outside (left) and inside (right) the droplet zone.
Figs. 3A-B present the (Fig. 3A) Zeta-potential of silver NPs aqueous dispersions and a schematic illustration of the NPs state at various PDAC concentrations and (Fig. 3B) the particles size at various zeta potential values.
Figs. 4A-C are SEM images of negatively charged silver NPs printed on (Fig. 4A) glass, (Fig. 4B) glass pre-coated with PDAC, and (Fig. 4C) PET pre-coated with PDAC (the same scale bar for all images). Figs. 5A-C are (Fig. 5A) macroscopic image of a pattern printed on Epson photo paper and SEM images of (Fig. 5B) the surface and (Fig. 5C) the cross-section of the same pattern.
Figs. 6A-B are illustrative of a process according to the invention: Fig. 6A is a schematic illustration of the EL device and the printing process, and Fig. 6B is an illustration of an electroluminescence working device.
DETAILED DESCRIPTION OF EMBODIMENTS Room temperature sintering — Mechanism
Example 1. Sintering by PDAC on preformed silver NPs pattern.
A general illustration of the sintering process according to the invention is provided in Fig. 1.
An aqueous ink composed of silver NPs with a diameter of 5 to 20 run, stabilized by polyacrylic acid, as described previously [24], was ink-jet printed on a glass slide. As expected, after drying at room temperature, the printed pattern composed of closely packed individual silver NPs (Fig. 2 left expansion) and possessed a resistivity greater than the Ohmmeter threshold, i.e. more than a million times the bulk silver resistivity.
At the next step, a solution of a polycation, poly(diallyldimethylammoniurn chloride) (PDAC), was printed on top of the silver pattern as an individual droplet (Fig. 2 center). Surprisingly, it was found that within the zone of the polycation printed droplet, spontaneous sintering of the silver NPs occurred at room temperature (although the melting point of silver is 9610C), as demonstrated in the right-hand expansion in Fig. 2. The difference between the sintered NPs, within the droplet zone of PDAC, and the well-confined NPs outside this zone, was evident. Without being bound by theory, it is believed that this coalescence led to a significant conductivity of the printed pattern.
In order to understand the role of PDAC in this room temperature sintering process, the effect on an aqueous dispersion of the same NPs was evaluated. The zeta (ζ) potential and average particles size of such dispersions as a function of PDAC concentration is presented in Figs. 3A-B.
As may be understood from Fig. 3A, the C-potential of the original NPs was -47±3 mV, and its negative value decreased with the increase in PDAC concentration. At a concentration as low as 4.2 10"4 wt% PDAC, the ^-potential reached a zero value, and rapid precipitation was observed due to aggregation of the nanoparticles evidently due to a drastic increase in the average in particles size (Fig. 3B). Further increase in the PDAC concentration led to re-stabilization of the silver NPs, which displayed a positive C-potential (charge inversion).
As it follows from Figs. 3A-B, at concentrations around the point of zero charge, PDAC behaved as a coagulant for the metallic NPs by charge neutralization. Interestingly, this charge neutralization process, while performed in a closely packed array of nanoparticles on a solid substrate, led to their irreversible coalescence, which was actually a sintering process taking place at room temperature. A coalescence process of individual NPs (not arrays), taking place when two NPs were allowed to come close enough, was previously reported during an in situ characterization of metallic NPs by high resolution transmission electron microscopy [16,25-30].
Example 2. Sintering by printing Ag NPs on preformed PDAC layer.
The room temperature sintering process was also observed while drops of the silver NPs dispersion were printed on top of a substrate that was pre-coated with PDAC. The printing was conducted on glass and PET substrates, which were pre-coated with a PDAC solution (by spreading). It was found that the resulting printed patterns were composed of sintered NPs, as clearly seen in the SEM image (Figs. 4B and 4C). For comparison, printing on a glass substrate without the PDAC pre-coating resulted in patterns composed of non-sintered individual nanoparticles (Fig. 4A).
Similarly to the coagulation effect of polycation molecules on silver NPs dispersed in water, when a polycation was used as a "sintering agent" (printed on a preprinted silver pattern or deposited on a substrate before the silver NPs deposition), the coalescence mechanism resulted from the diffusion of free polycaion chains between the silver NPs causing a charge neutralization and resulting in a dried sintered pattern.
Example 3. Conductivity and formation of an electroluminescence device.
The applicability of the room temperature sintering process of the invention in the formation of conductive patterns on flexible paper and plastic substrates (pretreated with PDAC) was evaluated by ink-jet printing of silver NPs on (a) copier paper, (b) photo paper (Epson) and (c) a plastic (PET) electroluminescence (EL) device.
The copier paper and EL device top layer were pre-coated by PDAC (6 μm wet thickness of 0.1 wt% PDAC solution) prior to printing the silver pattern. In the case of the photo paper, since it already contains PDAC (according to energy dispersive spectrometry (EDS) data and according to an Epson patent [31]), no pretreatment was required. In general, it was found that the patterns printed on the two papers were sintered. Fig. 5 presents the pattern printed on the photo paper (Fig. 5A), and the SEM images of the sintered surface layer (Fig. 5B) and the cross-sectional area (Fig. 5C).
It was found that the patterns were conductive, having a sheet resistance and resistivity of 0.078 (±0.005) Ωsquare and 7.8 (±0.5) μΩcm, respectively, while printed on Epson photo paper and 0.68 (±0.07) Ωsquare and 68 (±0.7) μΩcm, respectively, while printed on copier paper (these resistivities did not change over a period of at least 6 months). It should be emphasized that such low resistivities, only 5 times higher than that of bulk silver (in the case of the photo paper), were reported until now only for metallic patterns heated at elevated temperatures [8,11] for extended periods while with the process of the invention, the low resistivity was achieved spontaneously at room temperature. The higher resistivity which was achieved on the copier paper was probably due to the surface roughness of the paper which affects the uniformity of the pattern and therefore reduces the number of percolation paths.
In order to evaluate the applicability of this sintering technique for plastic electronics, a flexible, transparent PET based electroluminescent device was constructed in two steps: 1) a four layers (PET : ITO : ZnS : BaTiO3) electroluminescence device (MOBIChem Scientific Engineering) [32] was coated by PDAC on top of the BaTiO3 layer (6 μm wet thickness of 0.1 wt% PDAC solution) and dried at room temperature, 2) a silver dispersion was ink-jet printed directly on top of the PDAC layer (schematically illustrated in Figs. 6A-B). As demonstrated, a voltage (100 volts) applied between the ITO and the silver electrodes, resulted in a light emitting pattern (90 cd/sqm), corresponding to the printed silver pattern. Example 4. Self-sintering by NaCl.
As mentioned above, instead of introducing the sintering agent to the NPs before or after the deposition of the NPs, it is possible to add a low concentration of the sintering agent to the NPs dispersion. Due to the evaporation of the liquid, in which the NPs are dispersed, the sintering agent concentration increases, leading to the sintering of the NPs.
Various NaCl concentrations were added to 15 nm silver NPs stabilized by PAA. The formulations contained 5 wt% propylene glycol, 0.05 wt% BYK 348 and 0 to 35 mM NaCl. Table 1 presents the sheet resistance of patterns obtained by depositing these formulations on glass by the draw-down technique and drying at 5O0C.
Figure imgf000015_0001
Table 1- sheet resistance of patterns obtained by employing varying concentrations of NaCl.

Claims

CLAIMS:
1. A process for sintering nanoparticles (NPs) on a substrate, the process comprising contacting said NPs with at least one sintering agent at a low temperature, thereby obtaining a sintered pattern on said substrate.
2. The process according to claim 1, wherein the substrate is pre-coated with a film of said NPs and subsequently treated with said at least one sintering agent.
3. The process according to claim 1 , wherein the substrate is pre-coated with said at least one sintering agent and subsequently treated with said NPs.
4. The process according to claim 1, wherein the NPs and at least one sintering agent are pre-formulated in an aqueous dispersion, said dispersion being applied onto the substrate and allowed to dry.
5. The process according to claim 4, wherein the formulation comprises a concentration of said at least one sintering agent which is below the critical coagulation concentration of the sintering agent.
6. The process according to any one of claims 1 to 4, wherein the pattern is obtained by inkjet printing.
7. A process for forming a self-sintered pattern on a substrate, the process comprising ink-jet printing onto said substrate an aqueous formulation of nanoparticles (NPs) and at least one sintering agent and permitting said pattern to dry, thereby forming a sintered pattern on said substrate.
8. The process according to any one of the preceding claims, wherein sintering is carried out at a temperature between 5 and 1500C.
9. The process according to claim 8, wherein the sintering temperature is between 5 and 1000C.
10. The process according to claim 8, wherein the sintering temperature is between 5 and 500C.
11. The process according to claim 8, wherein the sintering temperature is between 5 and 3O0C.
12. The process according to claim 8, wherein the sintering temperature does not exceed 5O0C.
13. The process according to claim 8, wherein the sintering temperature is between 20 and 3O0C.
14. The process according to any one of claims 1 to 7, wherein the sintering is spontaneous and does not require external application of energy.
15. The process according to any one of the preceding claims, wherein the NPs is a plurality of one or more types of nanoparticles, each type being different in at least one of material, shape, size, chemical and physical properties.
16. The process according to claim 15, wherein the plurality of NPs comprises nanoparticles smaller than 100 nm in diameter.
17. The process according to claim 15, wherein the plurality of NPs is selected from metallic nanoparticles, nanoparticles of one or more metal oxide and semiconductor nanoparticles.
18. The process according to claim 15, wherein the metallic NPs are nanoparticles comprising at least one metal selected from silver, copper, gold, indium, tin, iron, cobalt, platinum, titanium, titanium oxide, silicon, silicon oxide or any oxide or alloy thereof.
19. The process according to claim 7, wherein the NPs constitute between about 1 and 80% w/w of the total weight of the formulation.
20. The process according to any one of the preceding claims, wherein the at least one sintering agent is a coagulant material, capable of coagulating the NPs.
21. The process according to claim 20, wherein the at least one sintering agent is selected to cause at least one of: (i) irreversible coalescence of the closely located NPs due to neutralization of the charges at the NPs surface and (ii) screening charges at the NPs surface.
22. The process according to claim 20, wherein the at least one sintering agent is selected from a salt, a charged polymer, an acid and a base.
23. The process according to claim 22, wherein said sintering agent contains chloride.
24. The process according to claim 23, wherein said sintering agent which contains chloride is selected from KCl, NaCl, MgCl2, AlCl3, LiCl and CaCl2.
25. The process according to claim 22, wherein said charged polymer is a polycation or a polyanion.
26. The process according to claim 25, wherein said polycation is poly(diallyldimethylammonium chloride) (PDAC).
27. The process according to claim 25, wherein said polymer is selected amongst polyimides and polypyrroles.
28. The process according to claim 22, wherein said acid is selected from HCl, H2SO4, HNO3, H3PO4, acetic acid and acrylic acid.
29. The process according to claim 22, wherein said base is selected from ammonia, aminomethyl propanol (AMP) KOH and NaOH.
30. The process according to claim 7, wherein the at least one sintering agent is present in the formulation in a molar concentration of between about 0.1 to 500 mM.
31. The process according to claim 7, wherein the aqueous formulation further comprises at least one dispersant.
32. The process according to claim 31, wherein said at least one dispersant is selected amongst polyelectrolites and polymeric materials capable of forming salts.
33. The process according to claim 32, wherein said at least one dispersant is selected from polycarboxylic acid esters, unsaturated polyamides, polycarboxylic acids, alkyl amine salts of polycarboxylic acids, polyacrylate dispersants, polyethyleneimine dispersants and polyurethane dispersants.
34. The process according to claim 31, wherein said at least one dispersant is selected from Disperse BYK® 190, Disperse BYK® 161, Disperse BYK® 163, Disperse BYK® 164, Disperse BYK® 2000, Disperse BYK® 2001, EFKA® 4046, EFKA® 4047, Solsperse® 40000, Solsperse® 24000 and XP 1742.
35. The process according to claim 31, wherein said at least one dispersant is at least one surfactant.
36. The process according to claim 35, wherein said at least one surfactant is selected from ionic, nonionic and zwitterionic surfactants.
37. The process according to claim 36, wherein said at least one surfacnat is selected from alkyl polyglycol ethers, alkyl phenol polyglycol ethers, alkali metal or ammonium salts of alkyl, aryl or alkylaryl sulfonates, sulfates, or phosphates, and sulfosuccinate salts.
38. The process according to claim 37, wherein said alkyl polyglycol ether is selected from ethoxylation products of lauryl, tridecyl, oleyl, or stearyl alcohols.
39. The process according to claim 37, wherein said alkyl phenol polyglycol ether is selected from ethoxylation products of octyl-or nonylphenol, diisopropyl phenol or triisopropyl phenol.
40. The process according to claim 37, wherein said alkali metal or ammonium salt of alkyl, aryl or alkylaryl sulfonates, sulfates, or phosphates is selected from sodium lauryl sulfate, sodium octylphenol glycolether sulfate, sodium dodecylbenzene sulfonate, sodium lauryldiglycol sulfate, ammonium tri-tert-butyl phenol, penta- glycol sulfonates and octa-glycol sulfonates.
41. The process according to claim 37, wherein said sulfosuccinate salt is selected from disodium ethoxylated nonylphenol ester of sulfosuccinic acid, disodium n- octyldecyl sulfosuccinate, and sodium dioctyl sulfosuccinate.
42. The process according to claim 31, wherein said disprsant is selected from didodecyldimethylammonium bromide (DDAB), CTAB, CTAC cetyl(hydroxyethyl)(dimethyl)ammonium bromide, Λζv/V-dimethyl-./V-cetyl-./V-(2- hydroxyethyl)ammonium chloride, sodium dodecyl sulfate (SDS) l,2-bis(10,12- tricosadiynoyl)-5n-glycero-3-phosphochline, sulfonated triphenylphosphine, Ϋ{m- C6H4SO3Na)3 and alkyltriphenyl-methyltrisulfonate.
43. The process according to claim 16, wherein the aqueous formulation comprises water in an amount between 50 and 90% w/w of the formulation.
44. The process according to claim 7, wherein the aqueous formulation further comprises at least one additive selected to enhance performance, environmental effect, aesthetic effect, or enhance efficient application of said formulation onto a surface.
45. The process according to claim 44, wherein said at least one additive is selected amongst buffers, pH adjusting agents, biocides, sequestering agents, chelating agents, corrosion inhibitors, stabilizing agents, humectants, co-solvents, fixatives, penetrants, surfactants, colorants and magnetic materials.
46. The process according to any of the preceding claims, wherein the pattern of sintered NPs is formed on a substrate by any means including coating, dipping, printing, and inkjet printing.
47. The process according to any of the preceding claims, wherein the pattern covers the full surface of a substrate, the pattern is a continuous pattern on said substrate or a plurality of spaced apart patterns on said substrate.
48. The process according to claim 47, wherein the thickness of said pattern is between 0.05 to 50 micrometers.
49. The process according to any one of the preceding claims, wherein said substrate is selected from glass, polymeric films, plain paper, porous paper, non-porous paper, coated paper, flexible paper, copier paper, photo paper, glossy photopaper, semi-glossy photopaper, heavy weight matte paper, billboard paper, vinyl paper, high gloss polymeric films, transparent conductive materials, and plastic (poly(ethylene terephthalate), PET, polyacrylates (PA), polyethilene naphtalate (PEN), polyethersulphone (PES), polyethylene (PE), polyimide (PI), polypropylene (PP) and polycarbonate (PC).
50. The process according to any one of the preceding claims, wherein the sintered film of NPs is electrically conductive.
51. A process for forming an electrically conductive pattern on a substrate, said process comprising contacting a film of metallic nanoparticles on said substrate with at least one sintering agent at room temperature, thereby obtaining an electrically conductive pattern.
52. A process for forming an electrically conductive pattern on a substrate, said process comprising contacting a film of at least one sintering agent on a substrate, at room temperature, with metallic nanoparticles, thereby obtaining an electrically conductive pattern.
53. The process according to claim 51 or 52, wherein the electrical resistivity is lower than 1.6- 10"6 Ωm.
54. An aqueous formulation comprising nanoparticles, at least one sintering agent and at least one dispersant.
55. The aqueous formulation according to claim 53, wherein the concentration of said at least one sintering agent is below the critical coagulation concentration thereof.
56. The aqueous formulation according to claim 53, wherein the zeta potential of the NPs in the formulation is higher than |±15|mV.
57. The aqueous formulation according to claim 53, for use in a method of printing a sintered pattern on a substrate.
58. The aqueous formulation according to claim 56, wherein the zeta potential of the NPs during the liquid evaporation decrease below |±15|mV.
59. The aqueous formulation according to claim 53, wherein the viscosity of the formulation ranges from 1 cps to 60 cps at 20?C.
60. The aqueous formulation according to claim 53, wherein the viscosity of the formulation is between 1 cps and 20 cps at 20?C.
61. The aqueous formulation according to claim 53, wherein the viscosity of the formulation is between 3 cps and 15 cps at 20?C.
62. The aqueous formulation according to claim 53, wherein the viscosity of the formulation is between 4 cps and 12 cps at 20?C.
63. An article having at least one sintered surface prepared according to a process of any one of claims 1 to 52 or a formulation according to claims 53 to 61.
64. The article according to claim 62, wherein said sintered surface is conductive.
PCT/IL2010/000249 2009-03-24 2010-03-24 Process for sintering nanoparticles at low temperatures WO2010109465A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP10720202A EP2411560A1 (en) 2009-03-24 2010-03-24 Process for sintering nanoparticles at low temperatures
US13/258,766 US20120168684A1 (en) 2009-03-24 2010-03-24 Process for sintering nanoparticles at low temperatures
JP2012501501A JP2012521493A (en) 2009-03-24 2010-03-24 Nanoparticle sintering process at low temperature
CN2010800189206A CN102686777A (en) 2009-03-24 2010-03-24 Process for sintering nanoparticles at low temperatures
KR1020117025036A KR20130010101A (en) 2009-03-24 2010-03-24 Process for sintering nanoparticles at low temperatures
IL215192A IL215192A0 (en) 2009-03-24 2011-09-18 Process for sintering nanoparticles at low temperatures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16274409P 2009-03-24 2009-03-24
US61/162,744 2009-03-24

Publications (1)

Publication Number Publication Date
WO2010109465A1 true WO2010109465A1 (en) 2010-09-30

Family

ID=42315343

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2010/000249 WO2010109465A1 (en) 2009-03-24 2010-03-24 Process for sintering nanoparticles at low temperatures

Country Status (6)

Country Link
US (1) US20120168684A1 (en)
EP (1) EP2411560A1 (en)
JP (1) JP2012521493A (en)
KR (1) KR20130010101A (en)
CN (1) CN102686777A (en)
WO (1) WO2010109465A1 (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013137891A (en) * 2011-12-28 2013-07-11 Dowa Electronics Materials Co Ltd Silver conductive film and method for producing the same
CN103228110A (en) * 2013-03-01 2013-07-31 溧阳市新力机械铸造有限公司 Line resistance welding process for printed circuit board
WO2013192437A2 (en) 2012-06-22 2013-12-27 C3Nano Inc. Metal nanostructured networks and transparent conductive material
WO2014120993A1 (en) 2013-02-04 2014-08-07 Eastman Kodak Company Metal nanoparticle composition with water soluble polymer
US8828536B2 (en) 2013-02-04 2014-09-09 Eastman Kodak Company Conductive article having silver nanoparticles
US8828502B2 (en) 2013-02-04 2014-09-09 Eastman Kodak Company Making a conductive article
US20140252274A1 (en) * 2013-03-05 2014-09-11 Georgeta Masson Quantum dot (qd) delivery method
US20140332723A1 (en) * 2013-03-05 2014-11-13 Juanita N. Kurtin Quantum dot (qd) delivery method
CN104254572A (en) * 2012-04-27 2014-12-31 帝斯曼知识产权资产管理有限公司 Electrically conductive polyamide substrate
WO2015034579A1 (en) * 2013-09-05 2015-03-12 Henkel IP & Holding GmbH Metal sintering film compositions
WO2015034674A1 (en) * 2013-09-04 2015-03-12 Eastman Kodak Company Method of forming conductive films with micro-wires
WO2015084588A1 (en) 2013-12-03 2015-06-11 Eastman Kodak Company Preparation of articles with conductive micro-wire pattern
US9085699B2 (en) 2013-01-22 2015-07-21 Eastman Kodak Company Silver metal nanoparticle composition
CN105189666A (en) * 2013-03-20 2015-12-23 爱克发-格法特公司 A method to prepare a metallic nanoparticle dispersion
US9328253B2 (en) 2013-01-22 2016-05-03 Eastman Kodak Company Method of making electrically conductive micro-wires
EP2871644A4 (en) * 2012-07-03 2016-06-15 Ishihara Chemical Co Ltd Method for forming conductive film and sintering promoter
WO2016151586A1 (en) * 2015-03-25 2016-09-29 Stratasys Ltd. Method and system for in situ sintering of conductive ink
US9680072B2 (en) 2013-03-05 2017-06-13 Pacific Light Technologies Corp. Quantum dot (QD) delivery method
US10000670B2 (en) 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
US20180287608A1 (en) * 2013-02-26 2018-10-04 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
US10870772B2 (en) 2014-07-31 2020-12-22 C3Nano Inc. Transparent conductive films with fused networks
US11090858B2 (en) 2014-03-25 2021-08-17 Stratasys Ltd. Method and system for fabricating cross-layer pattern
WO2022007946A1 (en) * 2020-07-09 2022-01-13 The University Of Hong Kong Non-immersive dry sintering strategy for realizing decent metal based electrodes
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US11745294B2 (en) 2015-05-08 2023-09-05 Henkel Ag & Co., Kgaa Sinterable films and pastes and methods for use thereof
US11968787B2 (en) 2012-06-22 2024-04-23 C3 Nano, Inc. Metal nanowire networks and transparent conductive material

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8486305B2 (en) 2009-11-30 2013-07-16 Lockheed Martin Corporation Nanoparticle composition and methods of making the same
US9072185B2 (en) 2009-07-30 2015-06-30 Lockheed Martin Corporation Copper nanoparticle application processes for low temperature printable, flexible/conformal electronics and antennas
US9011570B2 (en) 2009-07-30 2015-04-21 Lockheed Martin Corporation Articles containing copper nanoparticles and methods for production and use thereof
TWI573846B (en) 2010-03-09 2017-03-11 西瑪奈米技術以色列有限公司 Process of forming transparent conductive coatings with sintering additives
EP2795627B1 (en) 2011-12-23 2019-03-13 The Board of Trustees of the University of Illionis Ink composition for making a conductive silver structure
WO2014118783A1 (en) * 2013-01-31 2014-08-07 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Three-dimensional conductive patterns and inks for making same
CN105339113B (en) 2013-07-04 2018-09-18 爱克发-格法特公司 Metal nanoparticle dispersion
EP2821164A1 (en) * 2013-07-04 2015-01-07 Agfa-Gevaert A metallic nanoparticle dispersion
KR20160015273A (en) * 2013-07-04 2016-02-12 아그파-게바에르트 엔.브이. A method of preparing a conductive metallic layer or pattern
US9398698B2 (en) 2013-12-19 2016-07-19 Eastman Kodak Company Forming patterns of electrically conductive materials
US9982154B2 (en) 2014-04-17 2018-05-29 Electroninks Incorporated Solid ink composition
US10696044B2 (en) 2014-09-30 2020-06-30 Hewlett-Packard Development Company, L.P Aqueous ink composition
CN104407735B (en) * 2014-11-11 2018-05-22 长沙市宇顺显示技术有限公司 Lead of touch screen conducting wire and preparation method thereof and touch-screen mobile phone
CN107530781B (en) * 2015-03-27 2020-09-08 松下电器产业株式会社 Metal nanoparticle dispersion liquid for solder paste, method for producing same, and solder paste and method for producing same
US10390433B2 (en) 2015-03-31 2019-08-20 Texas Instruments Incorporated Methods of forming conductive and resistive circuit structures in an integrated circuit or printed circuit board
EP3099146B1 (en) * 2015-05-27 2020-11-04 Agfa-Gevaert Method of preparing a silver layer or pattern comprising a step of applying a silver nanoparticle dispersion
EP3099145B1 (en) * 2015-05-27 2020-11-18 Agfa-Gevaert Method of preparing a silver layer or pattern comprising a step of applying a silver nanoparticle dispersion
JP6703110B2 (en) * 2015-12-18 2020-06-03 アグフア−ゲヴエルト Metal nanoparticle dispersion system
CN108885915B (en) * 2015-12-23 2021-09-10 汉高知识产权控股有限责任公司 Sinterable conductive composition, method of improving conductivity of composition, and substrate
CN108884330B (en) * 2016-03-15 2020-05-15 住友电气工业株式会社 Coating liquid for forming conductive layer, method for producing conductive layer, and conductive layer
CN106513284A (en) * 2016-10-13 2017-03-22 中国计量大学 Method for reinforcing film photon absorption by using copper nanoparticles
CN106590173A (en) * 2016-12-01 2017-04-26 南京大学 Nano-metal ink capable of being cured at low temperatures, preparation method therefor and application of nano-metal ink
CN106634215A (en) * 2016-12-01 2017-05-10 南京大学 Nano indium ink for flexible electronic devices as well as preparation method and application of nano indium ink
WO2018111686A1 (en) 2016-12-14 2018-06-21 The Charles Stark Draper Laboratory, Inc. Reactively assisted ink for printed electronic circuits
WO2018163184A1 (en) * 2017-03-09 2018-09-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Process for fabricating conductive patterns on 3-dimensional surfaces by hydro-printing
CN110240830B (en) * 2018-03-09 2022-10-18 国家纳米科学中心 Self-sintering conductive ink based on liquid metal particles, and preparation method and application thereof
CN109126891B (en) * 2018-07-09 2021-08-06 江汉大学 Preparation method of modified titanium dioxide doped polypyrrole nanocluster
CN109280424B (en) * 2018-09-05 2020-09-22 清华大学 Room-temperature sintering method of nano-silver-coated copper conductive ink
CN110461101A (en) * 2019-08-07 2019-11-15 清华大学 A kind of room temperature sintering method of nano-copper conductive ink
US11631565B2 (en) 2020-11-10 2023-04-18 Science Applications International Corporation Thermal fuse
CN114750279A (en) * 2022-04-07 2022-07-15 重庆鑫卓新型建材有限公司 Low-temperature drying process for sintered wallboard

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030286A1 (en) * 2004-09-14 2006-03-23 Cima Nano Tech Israel Ltd Ink jet printable compositions
WO2006076603A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Printable electrical conductors
WO2007120756A2 (en) * 2006-04-12 2007-10-25 Nanomas Technologies, Inc. Nanoparticles, methods of making, and applications using same
WO2008009779A1 (en) * 2006-07-21 2008-01-24 Valtion Teknillinen Tutkimuskeskus Method for manufacturing conductors and semiconductors
WO2008144504A1 (en) * 2007-05-18 2008-11-27 Nano-Proprietary, Inc. Metallic ink
WO2009156990A1 (en) * 2008-06-23 2009-12-30 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4202915A (en) * 1978-10-03 1980-05-13 The Tainton Company Mechanical plating process
US6682189B2 (en) * 2001-10-09 2004-01-27 Nexpress Solutions Llc Ink jet imaging via coagulation on an intermediate member
AU2002363192A1 (en) * 2001-11-01 2003-05-12 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ink-jet inks containing metal nanoparticles
US7306699B2 (en) * 2002-12-31 2007-12-11 Kimberly-Clark Worldwide, Inc. Tissue product containing a topical composition in the form of discrete droplets
CN100488339C (en) * 2003-05-16 2009-05-13 播磨化成株式会社 Method for forming fine copper particle sintered product type of electric conductor having fine shape
KR101165484B1 (en) * 2004-02-25 2012-07-13 나노잉크, 인크. A method of delivering ink to a substrate surface, a method of writing conductive metal, an ink formulation for nanolithography or microlithography, a method for depositing metallic traces, a method and device for repair of a flat panel display substrate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006030286A1 (en) * 2004-09-14 2006-03-23 Cima Nano Tech Israel Ltd Ink jet printable compositions
WO2006076603A2 (en) * 2005-01-14 2006-07-20 Cabot Corporation Printable electrical conductors
WO2007120756A2 (en) * 2006-04-12 2007-10-25 Nanomas Technologies, Inc. Nanoparticles, methods of making, and applications using same
WO2008009779A1 (en) * 2006-07-21 2008-01-24 Valtion Teknillinen Tutkimuskeskus Method for manufacturing conductors and semiconductors
WO2008144504A1 (en) * 2007-05-18 2008-11-27 Nano-Proprietary, Inc. Metallic ink
WO2009156990A1 (en) * 2008-06-23 2009-12-30 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same

Non-Patent Citations (29)

* Cited by examiner, † Cited by third party
Title
1. PARK; S. H. KO; H. PAN; C. P. GRIGOROPOULOS; A. P. PISANO; J. M. J. FRECHET; E. S. LEE; J. H. JEONG: "20", ADVANCED MATERIALS, 2008, pages 489
D. KIM; J. MOON, ELECTROCHEMICAL AND SOLID STATE LETTERS, vol. 8, 2005, pages J30
D. KIM; S. JEONG; B. K. PARK; J. MOON, APPLIED PHYSICS LETTERS, 2006, pages 89
D. WAKUDA; K. KIM; K. SUGANUMA, SCRIPTA MATERIALIA, vol. 59, 2008, pages 649 - 652
D. WAKUDA; M. HATAMURA; K. SUGANUMA, CEMICAL PHYSICS LETTERS, vol. 441, 2007, pages 305 - 308
F. GARNIER; R. HAJLAOUI; A. YASSAR; P. SRIVASTAVA, SCIENCE, vol. 265, 1994, pages 1684
G. EDA; G. FANCHINI; M. CHHOWALLA, NATURE NANOTECHNOLOGY, vol. 3, 2008, pages 270
G. PALASANTZAS; T. VYSTAVEL; S. A. KOCH; J. T. M. DE HOSSON, JOURNAL OF APPLIED PHYSICS, 2006, pages 99
H-S. KIM; S.R. DHAGE; D-E. SHIM; H.T. HAHN, APPL. PHYS. A, vol. 97, 2009, pages 791
J. B. SZCZECH; C. M. MEGARIDIS; J. ZHANG; D. R. GAMOTA, MICROSCALE THERMOPHYSICAL ENGINEERING, vol. 8, 2004, pages 327
J. PERELAER; B. J. DE GANS; U. S. SCHUBERT, ADVANCED MATERIALS, vol. 18, 2006, pages 2101
J. W. M. FRENKEN; J. F. VANDERVEEN, PHYSICAL REVIEW LETTERS, vol. 54, 1985, pages 134
K. S. MOON; H. DONG; R. MARIC; S. POTHUKUCHI; A. HUNT; Y. LI; C. P. WONG, JOURNAL OF ELECTRONIC MATERIALS, vol. 34, 2005, pages 168
L. J. LEWIS; P. JENSEN; J. L. BARRAT, PHYSICAL REVIEW B, vol. 56, 1997, pages 2248
M. JOSE-YACAMAN; C. GUTIERREZ-WING; M. MIKI; D. Q. YANG; K. N. PIYAKIS; E. SACHER, JOURNAL OF PHYSICAL CHEMISTRY B, vol. 109, 2005, pages 9703
M.L. ALLEN; M. ARONNIEMI; T. MATTILA; A. ALASTALO; K. OJANPERA; M. SUHONEN; H. SEPPÄ, NANOTECHNOL, vol. 19, 2008, pages 175201
N. R. BIERI; J. CHUNG; D. POULIKAKOS; C. P. GRIGOROPOULOS, SUPERLATTICES AND MICROSTRUCTURES, vol. 35, 2004, pages 437
P. A. BUFFAT, MATERIALS CHEMISTRY AND PHYSICS, vol. 81, 2003, pages 368
P. A. BUFFAT, PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, vol. 361, 2003, pages 291
S. B. FULLER; E. J. WILHELM; J. A. JACOBSON, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, vol. 11, 2002, pages 54
S. H. KO; H. PAN; C. P. GRIGOROPOULOS; C. K. LUSCOMBE; J. M. J. FRECHET; D. POULIKAKOS, APPLIED PHYSICS LETTERS, 2007, pages 90
S. JOO; D. F. BALDWIN, ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, 2007, pages 212
S. OKAMURA ET AL., KOUBUNSHI KAGAKY (POLYMER CHEMISTRY), vol. 17, 1960, pages 601
S. R. FORREST, NATURE, vol. 428, 2004, pages 911
S. SIVARAMAKRISHNAN; P. J. CHIA; Y. C. YEO; L. L. CHUA; P. K. H. HO, NATURE MATERIALS, vol. 6, 2007, pages 149
T. H. J. VAN OSCH; J. PERELAER; A. W. M. DE LAAT; U. S. SCHUBERT: "20", ADVANCED MATERIALS, 2008, pages 343
T. HAWA; M. R. ZACHARIAH, JOURNAL OFAEROSOL SCIENCE, vol. 37, 2006, pages 1
W. ZAPKA; W. VOIT; C. LODERER; P. LANG, DIGITAL FABRICATION, vol. 2008, 2008, pages 906 - 911
Y. CHEN; R. E. PALMER; J. P. WILCOXON, LANGMUIR, vol. 22, 2006, pages 2851

Cited By (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013137891A (en) * 2011-12-28 2013-07-11 Dowa Electronics Materials Co Ltd Silver conductive film and method for producing the same
CN104254572B (en) * 2012-04-27 2017-04-05 帝斯曼知识产权资产管理有限公司 Electrical Conductive Polyamide base material
CN104254572A (en) * 2012-04-27 2014-12-31 帝斯曼知识产权资产管理有限公司 Electrically conductive polyamide substrate
US11987713B2 (en) 2012-06-22 2024-05-21 C3 Nano, Inc. Metal nanostructured networks and transparent conductive material
WO2013192437A2 (en) 2012-06-22 2013-12-27 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US10781324B2 (en) 2012-06-22 2020-09-22 C3Nano Inc. Metal nanostructured networks and transparent conductive material
EP3611231A1 (en) 2012-06-22 2020-02-19 C3Nano Inc. Metal nanostructured networks and transparent conductive material
US11968787B2 (en) 2012-06-22 2024-04-23 C3 Nano, Inc. Metal nanowire networks and transparent conductive material
EP2871644A4 (en) * 2012-07-03 2016-06-15 Ishihara Chemical Co Ltd Method for forming conductive film and sintering promoter
US10000670B2 (en) 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
US9328253B2 (en) 2013-01-22 2016-05-03 Eastman Kodak Company Method of making electrically conductive micro-wires
US9085699B2 (en) 2013-01-22 2015-07-21 Eastman Kodak Company Silver metal nanoparticle composition
US9099227B2 (en) 2013-01-22 2015-08-04 Eastman Kodak Company Method of forming conductive films with micro-wires
US8828275B2 (en) 2013-02-04 2014-09-09 Eastman Kodak Company Metal nanoparticle composition with water soluble polymer
WO2014120993A1 (en) 2013-02-04 2014-08-07 Eastman Kodak Company Metal nanoparticle composition with water soluble polymer
US8828536B2 (en) 2013-02-04 2014-09-09 Eastman Kodak Company Conductive article having silver nanoparticles
US8828502B2 (en) 2013-02-04 2014-09-09 Eastman Kodak Company Making a conductive article
EP2961801B1 (en) * 2013-02-26 2023-08-23 C3Nano Inc. Fused metal nanostructured networks, use of fusing solutions with reducing agents and methods for forming metal networks
US20180287608A1 (en) * 2013-02-26 2018-10-04 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
CN103228110B (en) * 2013-03-01 2016-01-06 溧阳市新力机械铸造有限公司 The circuit welding resistance technique of printed circuit board (PCB)
CN103228110A (en) * 2013-03-01 2013-07-31 溧阳市新力机械铸造有限公司 Line resistance welding process for printed circuit board
US11053435B2 (en) 2013-03-05 2021-07-06 Osram Opto Semiconductors Gmbh Quantum dot (QD) delivery method
US20140332723A1 (en) * 2013-03-05 2014-11-13 Juanita N. Kurtin Quantum dot (qd) delivery method
US20140252274A1 (en) * 2013-03-05 2014-09-11 Georgeta Masson Quantum dot (qd) delivery method
US9680072B2 (en) 2013-03-05 2017-06-13 Pacific Light Technologies Corp. Quantum dot (QD) delivery method
US10202543B2 (en) * 2013-03-05 2019-02-12 Osram Opto Semiconductors Gmbh Quantum dot (QD) delivery method
CN105189666A (en) * 2013-03-20 2015-12-23 爱克发-格法特公司 A method to prepare a metallic nanoparticle dispersion
WO2015034674A1 (en) * 2013-09-04 2015-03-12 Eastman Kodak Company Method of forming conductive films with micro-wires
WO2015034579A1 (en) * 2013-09-05 2015-03-12 Henkel IP & Holding GmbH Metal sintering film compositions
US11274223B2 (en) 2013-11-22 2022-03-15 C3 Nano, Inc. Transparent conductive coatings based on metal nanowires and polymer binders, solution processing thereof, and patterning approaches
US9155201B2 (en) 2013-12-03 2015-10-06 Eastman Kodak Company Preparation of articles with conductive micro-wire pattern
WO2015084588A1 (en) 2013-12-03 2015-06-11 Eastman Kodak Company Preparation of articles with conductive micro-wire pattern
US9591752B2 (en) 2013-12-03 2017-03-07 Eastman Kodak Company Articles with conductive micro-wire pattern
US11090858B2 (en) 2014-03-25 2021-08-17 Stratasys Ltd. Method and system for fabricating cross-layer pattern
US11904525B2 (en) 2014-03-25 2024-02-20 Stratasys Ltd. Method and system for fabricating cross-layer pattern
US11343911B1 (en) 2014-04-11 2022-05-24 C3 Nano, Inc. Formable transparent conductive films with metal nanowires
US10870772B2 (en) 2014-07-31 2020-12-22 C3Nano Inc. Transparent conductive films with fused networks
US11512215B2 (en) 2014-07-31 2022-11-29 C3 Nano, Inc. Metal nanowire ink and method for forming conductive film
US11814531B2 (en) 2014-07-31 2023-11-14 C3Nano Inc. Metal nanowire ink for the formation of transparent conductive films with fused networks
IL254610B (en) * 2015-03-25 2022-10-01 Stratasys Ltd Method and system for in situ sintering of conductive ink
IL254610B2 (en) * 2015-03-25 2023-02-01 Stratasys Ltd Method and system for in situ sintering of conductive ink
US11191167B2 (en) 2015-03-25 2021-11-30 Stratasys Ltd. Method and system for in situ sintering of conductive ink
WO2016151586A1 (en) * 2015-03-25 2016-09-29 Stratasys Ltd. Method and system for in situ sintering of conductive ink
US11745294B2 (en) 2015-05-08 2023-09-05 Henkel Ag & Co., Kgaa Sinterable films and pastes and methods for use thereof
US12042883B2 (en) 2015-05-08 2024-07-23 Henkel Ag & Co. Kgaa Sinterable films and pastes and methods for use thereof
WO2022007946A1 (en) * 2020-07-09 2022-01-13 The University Of Hong Kong Non-immersive dry sintering strategy for realizing decent metal based electrodes

Also Published As

Publication number Publication date
CN102686777A (en) 2012-09-19
EP2411560A1 (en) 2012-02-01
KR20130010101A (en) 2013-01-25
US20120168684A1 (en) 2012-07-05
JP2012521493A (en) 2012-09-13

Similar Documents

Publication Publication Date Title
US20120168684A1 (en) Process for sintering nanoparticles at low temperatures
Layani et al. Conductive patterns on plastic substrates by sequential inkjet printing of silver nanoparticles and electrolyte sintering solutions
KR101637547B1 (en) Additives and modifiers for solvent- and water-based metallic conductive inks
US9833836B2 (en) Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same
Jung et al. Studies on inkjet-printed conducting lines for electronic devices
KR102300937B1 (en) Silver nanoparticles, method for producing silver nanoparticles, and silver nanoparticle ink
US20110048772A1 (en) Conducting polymer ink
CN101116149A (en) Ink jet printable compositions
WO2017074397A1 (en) Forming three-dimensional (3d) printed electronics
Lee et al. Effect of complex agent on characteristics of copper conductive pattern formed by ink-jet printing
US20240327668A1 (en) Formulations and processes for producing highly conductive copper patterns
Kamyshny et al. Metallic nanoinks for inkjet printing of conductive 2D and 3D structures
US20140272118A1 (en) Method for producing silver conductive film
EP3891232B1 (en) Inkjet printing of conductive traces
TWI584485B (en) Aligned networks on substrates
Rezaga et al. Sintering of silver nanoparticles at room-temperature for conductive ink applications
EP3256534A1 (en) Conductive ink
Kim et al. Effect of ink viscosity on electrical resistivity of narrow printed silver lines
CA2838783A1 (en) Electrically conductive printable composition
Wang et al. AgNO3 flux on the polymer-coated Al2O3 substrates and application in the fabrication of patterned Ag electrodes
Kim et al. Fabrication of Resistor Component Using Magnetostrictive Inkjet Printing at Room Temperature.
Han et al. Conducting Polymer Ink
Chen et al. Preparation of nano silver pastes applied in printed electronics
Magdassi et al. Nanomaterials for Printed Electronics

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080018920.6

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10720202

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2012501501

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2010720202

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20117025036

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 13258766

Country of ref document: US