CN106634215A - Nano indium ink for flexible electronic devices as well as preparation method and application of nano indium ink - Google Patents

Nano indium ink for flexible electronic devices as well as preparation method and application of nano indium ink Download PDF

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Publication number
CN106634215A
CN106634215A CN201611094498.8A CN201611094498A CN106634215A CN 106634215 A CN106634215 A CN 106634215A CN 201611094498 A CN201611094498 A CN 201611094498A CN 106634215 A CN106634215 A CN 106634215A
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ink
indium
nanometer
particle
surfactant
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CN201611094498.8A
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Chinese (zh)
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潘毅
周洁
曹辰辉
虞磊
孔令宇
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Nanjing University
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Nanjing University
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Priority to CN201611094498.8A priority Critical patent/CN106634215A/en
Priority to PCT/CN2016/109956 priority patent/WO2018098853A1/en
Publication of CN106634215A publication Critical patent/CN106634215A/en
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/30Inkjet printing inks
    • C09D11/38Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/52Electrically conductive inks

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Conductive Materials (AREA)

Abstract

The invention discloses nano indium ink for flexible electronic devices as well as a preparation method and application of the nano indium ink. The nano indium ink comprises the following components in percent by weight: 40-60% of indium nanoparticles and 40-60% of ink carrier, wherein the ink carrier comprises the following components in percent by weight: 40-70% of a solvent, 10-25% of a surfactant, 1-20% of a wetting agent and 1-15% of an adhesive; the solvent is hexane or ethanol; the surfactant is stearic acid, triethanolamine, lauric acid or polyoxyethylene ether; the wetting agent is diethylene glycol, diethylene glycol butyl ether or glycerol; the adhesive is phenolic resin or fatty amine. The nano indium ink can be widely applied to printers with nozzles with a variety of different sizes, can print fine electronic circuits, and can be used for printing metal electrodes of large-area optoelectronic devices.

Description

Nanometer indium ink for flexible electronic device and its preparation method and application
Technical field:
The invention belongs to ink-jet printing ink technical field, and in particular to the nanometer indium ink and its preparation for nesa coating Methods and applications.
Background technology
Microelectronic component based on new organic polymer material(Organic Electronics)Develop generation rapidly The turn up of one brand-new industry of table.The famous IDTechex companies prediction of Britain, the global sales of new organic electronic device About 47,000,000,000 dollars/year were up in 2018, by 2028, this numeral will advance by leaps and bounds to about 380,000,000,000 dollars/year. In the output value distribution of whole industry, there is about 50%-60% to be that, from all kinds of supplementary materials, wherein metal electrode material is constituted about 8%-10% or so.
With the development of computer industry, the communication of man-machine interface into computer technology a focus, touch-screen with Outstanding man-machine communication way, becomes the most fast technology of Developing.Touch Screen can be made one with machinery compartment with more friendly Directly mode is linked up, and makes the use more hommization of personal electric product.Wherein, resistance-type and capacitive touch screen need to make Use nesa coating.The material of nesa coating needs to be provided simultaneously with flexibility, the transparency and electric conductivity.Nesa coating is needed Touch-screen could be formed after the operations such as etching, printed wire, pressing.
In the process of comprehensive commercialization industrialization, organic electronic also has the technological difficulties that many needs to be broken through, wherein Including synthesizing and prepare the metal electrode material on organic polymer thin film surface.Semiconductive organic polymer film is required and it Work function(Work Function)The metal electrode for matching.This kind of metal electrode is mostly with metallic compounds such as Jin Heyin It is main, it is prepared into by way of vacuum coating on organic polymer thin film surface.But this metal coating technique is generally required 200-300oThe high annealing of C.This temperature range is unaffordable for many organic polymer thin films.It is such High-temperature technology can cause to be produced on the interface of organic polymer thin film and metal electrode needs many defects, so as to substantially reduce device Photoelectric transformation efficiency and service life.And, the technology of vacuum coating cannot manufacture big face with printing technology matching The thin film photocell and flexible electronic device of product and overlarge area.Therefore one class of exploitation is dedicated for all kinds of organic flexible photoelectrons The thin-film metal electrodes material that device, suitable large area typography is manufactured at normal temperatures and pressures has huge technological value And economic benefit.
Nanometer indium compound can be dissolved in organic solution, therefore can use normal temperature and pressure technique, by nanometer indium compound Print and be prepared into transparent conducting film.Based on the good compatibility between nano-metal particle/organic polymer interface, nanometer Indium compound material can significantly reduce the surface contacted resistance of device, and the material reduced between metal electrode and organic film lacks Fall into, so as to improve device reliability and photoelectric transformation efficiency.
The content of the invention
The technical problem of solution:Occur in order to solve nesa coating preparation process solidification sintering temperature is too high and gold The problem of metal nano-particle and matrix compatibility, the invention provides a kind of nanometer indium ink for flexible electronic device and its Preparation method and application.
Technical scheme:Nanometer indium ink, count by weight percentage, including following component:Nanometer indium particle:40~60%; Ink carrier:40~60%;The ink carrier includes count by weight percentage following component:Solvent 40~70%, surface is lived Property agent 10~25%, the % of wetting agent 1~20 and adhesive 1~15%;The solvent is hexane or ethanol;Surfactant is Stearic acid, triethanolamine, laurate or APEO;Wetting agent is diethylene glycol (DEG), butyl, glycerine;Adhesive For phenolic resin or acrylic resin.
A diameter of 10 nm ~ 30 nm of above-mentioned nanometer indium particle, and nanometer indium particle is by organic molecule Nang Bao, it is described Organic molecule is alkyl hydrosulfide.
The preparation method of nanometer indium ink, the preparation process of nanometer indium is:Under magnetic stirring, inidum chloride is dissolved in into hydrochloric acid In, wherein HCl is 170 ~ 200 with the mass ratio of inidum chloride:1, the mass ratio for adding n-hexane, inidum chloride and n-hexane is 1: (2.5~ 4), then will add in above-mentioned solution, wherein four as four polyethyleneglycol bay ethers of nonionic surfactant The mass ratio of polyethyleneglycol bay ether and inidum chloride is 0.15:1~ 0.25:1, stirring is defined lives containing hydrone, surface Property agent, organic solvent and In3+Micro emulsion micella micel;Then, hexyl mercaptan stirring, hexyl mercaptan and In are added3+ Molar ratio For 0.125 ~ 5:1, indium metal is restored the nanometer indium of the hexyl mercaptan Nang Bao for obtaining using excessive sodium borohydride The mol ratio of grain, sodium borohydride and inidum chloride is 1:1 ~ 2:1.
The size of nanometer indium is by alkyl hydrosulfide and In3+ Molar ratio regulating and controlling, as alkyl hydrosulfide and In3+ Mole Ratio is 0.125 ~ 5:When 1, the size of nanometer indium is received between 10 ~ 30nm and as alkyl hydrosulfide consumption increases The size of rice indium particle is gradually reduced.
Above-mentioned nanometer indium ink is applied in flexible electronic device is prepared.
Beneficial effect:The present invention solves solidification sintering temperature is too high and metal nanoparticle and matrix compatibility are asked Topic.Nanometer indium particle is the nanometer indium particle of mercaptan Nang Bao, and the use of mercaptan can increase between metallic particles and base material Compatibility, also can use as the dispersant of ink system.Additionally, by regulation and control alkyl hydrosulfide and In3+ Molar ratio changing Become the size of nanometer indium so that the ink can be widely applied to the printer of various different size nozzles, can both print fine Electronic circuit, can be used for again large area opto-electronic device metal electrode printing prepare in.
Description of the drawings
Fig. 1 is the scanning electron microscope (SEM) photograph of the present invention.(a)For transmission electron microscope(TEM)The conductive ink of the present invention of displaying is at 90 DEG C The structure on sintering conductive indium film surface after 2 hours;(b)For transmission electron microscope(TEM)The conductive ink of the present invention of displaying is in 80 DEG C of burnings The structure on knot conductive indium film surface after 2 hours.
Specific embodiment
Above example technology design only to illustrate the invention and feature, its object is to allow the person skilled in the art be Will appreciate that present disclosure and implement according to this, can not be limited the scope of the invention with this.It is all smart according to the present invention Equivalent transformation or modification that refreshing essence is done, all should be included within the scope of the present invention.
Embodiment 1:
The inidum chloride solid of 5.0 g is weighed, in being dissolved in the hydrochloric acid of the 0.06M of 12.5 mL, the n-hexane of 25.0 mL is added, is formed Mixed solution, is stirring evenly and then adding into the four polyethyleneglycol bay ethers of 1.0 mL as nonionic surfactant.Stirring shape Into containing hydrone, surfactant, organic solvent and In3+Micro emulsion micella micel.Add hexyl mercaptan(Hexyl mercaptan and In3+ Molar ratio be 5:1), add 1.25 g sodium borohydride indium metal is restored, obtain organic molecule Nang Bao's Nanometer indium particle.
The nanometer indium particle for weighing 1.5 g organic molecule Nang Bao is dissolved in the hexane of 2.0 mL, adds the ethanol of 0.23 g tri- Amine adds 0.4 g diethylene glycol (DEG)s as wetting agent as surfactant, adds the phenolic resin of 0.3 g as adhesive, stirring 30 min, using 0.45 μm of cellulose mixture membrane filtration emulsion printable ink is obtained.
Indium determines that its fusing point is lower than metals such as silver, gold due to self property, and the fusing point of nanometer indium is lower, nanometer indium The solidification temperature of ink typically at 80 ~ 100 DEG C, far below the solidification temperature of conductive silver ink.The indium ink of the present invention is through beating Print, the h of heat-agglomerating 2 in 90 DEG C of baking ovens naturally cools to room temperature and forms uniform conductive film.Connect in substrate material surface Continuous and uniform distribution shows and the preferable compatibility of base material.By regulating and controlling alkyl hydrosulfide and In3+ Molar ratio come Change the size of nanometer indium, as hexyl mercaptan and In3+ Molar ratio be 5:When 1, the indium particle size control for obtaining is left in 10nm It is right(A in Fig. 1).It is 0.3 m Ω/ that Jing four probe methods measure sheet resistance.
Embodiment 2:
The inidum chloride solid of about 4.0 g is weighed, in being dissolved in the hydrochloric acid of the 0.06M of 10.0 mL, magnetic agitation is subsequently adding 20 The n-hexane of mL, forms mixed solution, and the four polyethyleneglycol bay ethers of 0.8 mL are added as nonionic after stirring a few minutes Surfactant.Stirring is defined containing hydrone, surfactant, organic solvent and In3+Micro emulsion micella micel.Add Hexyl mercaptan(Hexyl mercaptan and In3+ Molar ratio be 1:8), add 1.0 g sodium borohydride indium metal is restored, obtain The nanometer indium particle of organic molecule Nang Bao.
Weigh 2.0 g nanometer indium particles to be dissolved in the hexane of 3 mL, add 0.3 g stearic acid as surfactant, plus Enter 0.4 g glycerine as wetting agent, add the acrylic resin of 0.32 g as adhesive, stir 30 min, use 0.45 μm cellulose mixture membrane filtration emulsion obtain printable ink.
Jing after printing, the heat-agglomerating 2h in 80 DEG C of baking ovens naturally cools to room temperature to this ink.Sintered products are using sweeping Retouch electron microscopic observation to learn:After sintering, indium particle joins together on glass carrier surface;By regulating and controlling alkyl hydrosulfide and In3+ 's Molar ratio changing the size of nanometer indium, as hexyl mercaptan and In3+ Molar ratio be 1:When 8, the indium particle size control for obtaining System is at 30nm or so (b in Fig. 1).It is 0.4 m Ω/ that Jing four probe methods measure sheet resistance.
Embodiment 3
Under magnetic stirring, inidum chloride is dissolved in hydrochloric acid, wherein HCl is 170 with the mass ratio of inidum chloride:1, add just oneself The mass ratio of alkane, inidum chloride and n-hexane is 1:2.5, then using as four polyethyleneglycol bays of nonionic surfactant Ether is added in solution, wherein the mass ratio of four polyethyleneglycol bay ethers and inidum chloride is 0.15:1, stirring is defined containing water Molecule, surfactant, organic solvent and In3+Micro emulsion micella micel;Then, hexyl mercaptan stirring, hexyl mercaptan and In are added3 + Molar ratio be 0.125:1, indium metal is restored the nanometer of the mercaptan Nang Bao for obtaining using excessive sodium borohydride The mol ratio of indium particle, sodium borohydride and inidum chloride is 1:1.
The nanometer indium particle of hexyl mercaptan Nang Bao is dissolved in solvent, is added and is stirred after surfactant, wetting agent and adhesive Mix and uniformly obtain emulsion, using 0.45 μm of cellulose mixture membrane filtration emulsion the ink of conduction is obtained.Nanometer indium particle (Mass percent):40%;Ink carrier(Mass percent):60%;Following (the mass percent of the composition of ink carrier):Ethanol (Solvent, 70%), stearic acid(Surfactant, 25%), butyl(Wetting agent, 1%), acrylic resin(Adhesive, 4%).Jing after printing, the heat-agglomerating 2h in 80 DEG C of baking ovens naturally cools to room temperature to this ink.Jing four probe methods measure surface Resistance is 0.45 m Ω/.
Embodiment 4
Under magnetic stirring, inidum chloride is dissolved in hydrochloric acid, wherein HCl is 190 with the mass ratio of inidum chloride:1, add just oneself The mass ratio of alkane, inidum chloride and n-hexane is 1:3.3, then using as the four polyethyleneglycol moons of nonionic surfactant Osmanthus ether is added in solution, wherein the mass ratio of four polyethyleneglycol bay ethers and inidum chloride is 0.2:1, stirring define containing Hydrone, surfactant, organic solvent and In3+Micro emulsion micella micel;Then, add hexyl mercaptan stirring, hexyl mercaptan and In3+ Molar ratio be 2:1, indium metal is restored the nanometer indium of the mercaptan Nang Bao for obtaining using excessive sodium borohydride The mol ratio of particle, sodium borohydride and inidum chloride is 1.5:1.
The nanometer indium particle of hexyl mercaptan Nang Bao is dissolved in solvent, is added and is stirred after surfactant, wetting agent and adhesive Mix and uniformly obtain emulsion, using 0.45 μm of cellulose mixture membrane filtration emulsion the ink of conduction is obtained.Nanometer indium particle (Mass percent):50%;Ink carrier(Mass percent):50%.Wherein, following (the quality percentage of the composition of ink carrier Than):Ethanol(Solvent, 60%), triethanolamine(Surfactant, 15%), diethylene glycol (DEG)(Wetting agent, 15%), phenolic resin(It is gluing Agent, 10%).Jing after printing, the heat-agglomerating 2h in 80 DEG C of baking ovens naturally cools to room temperature to this ink.Jing four probe methods are measured Sheet resistance is 0.47 m Ω/.
Embodiment 5
Under magnetic stirring, inidum chloride is dissolved in hydrochloric acid, wherein HCl is 200 with the mass ratio of inidum chloride:1, add just oneself The mass ratio of alkane, inidum chloride and n-hexane is 1:4, then using as four polyethyleneglycol bay ethers of nonionic surfactant In adding solution, wherein the mass ratio of four polyethyleneglycol bay ethers and inidum chloride is 0.25:1, stirring is defined containing moisture Son, surfactant, organic solvent and In3+Micro emulsion micella micel;Then, hexyl mercaptan stirring, hexyl mercaptan and In are added3+ Molar ratio be 5:1, indium metal is restored the nanometer indium of the mercaptan Nang Bao for obtaining using excessive sodium borohydride The mol ratio of grain, sodium borohydride and inidum chloride is 2:1.
The nanometer indium particle of hexyl mercaptan Nang Bao is dissolved in solvent, is added and is stirred after surfactant, wetting agent and adhesive Mix and uniformly obtain emulsion, using 0.45 μm of cellulose mixture membrane filtration emulsion the ink of conduction is obtained.Nanometer indium particle (Mass percent):60%;Ink carrier(Mass percent):40%.Wherein, following (the quality percentage of the composition of ink carrier Than):Hexane(Solvent, 40%), laurate(Surfactant, 25%), butyl work(Wetting agent, 20%), phenolic resin (Adhesive, 15%).Jing after printing, the heat-agglomerating 2h in 80 DEG C of baking ovens naturally cools to room temperature to this ink.Jing four probe methods It is 0.35 m Ω/ to measure sheet resistance.

Claims (7)

1. nanometer indium ink, it is characterised in that count by weight percentage, including following component:Nanometer indium particle:40~60%; Ink carrier:40~60%;The ink carrier includes count by weight percentage following component:Solvent 40~70%, surface is lived Property agent 10~25%, the % of wetting agent 1~20 and adhesive 1~15%;The solvent is hexane or ethanol;Surfactant is Stearic acid, triethanolamine, laurate or APEO;Wetting agent is diethylene glycol (DEG), butyl, glycerine;Adhesive For phenolic resin or acrylic resin.
2. according to claim 1 nanometer of indium ink, it is characterised in that a diameter of 10 nm of the nanometer indium particle ~ 30 nm。
3. according to claim 1 nanometer of indium ink, it is characterised in that the nanometer indium particle is by organic molecule Nang Bao.
4. according to claim 3 nanometer of indium ink, it is characterised in that described organic molecule is alkyl hydrosulfide.
5. according to the preparation method of the arbitrary nanometer indium ink of claim 1 ~ 4, it is characterised in that the preparation process of nanometer indium For:Under magnetic stirring, inidum chloride is dissolved in hydrochloric acid, wherein HCl is 170 ~ 200 with the mass ratio of inidum chloride:1, add The mass ratio of n-hexane, inidum chloride and n-hexane is 1:(2.5~ 4), then using as the four of nonionic surfactant poly- second Glycol list bay ether is added in above-mentioned solution, wherein the mass ratio of four polyethyleneglycol bay ethers and inidum chloride is 0.15:1~ 0.25:1, stirring is defined containing hydrone, surfactant, organic solvent and In3+Micro emulsion micella micel;Then, plus Enter hexyl mercaptan stirring, hexyl mercaptan and In3+ Molar ratio be 0.125 ~ 5:1, using excessive sodium borohydride by indium metal The mol ratio for restoring the nanometer indium particle of the hexyl mercaptan Nang Bao for obtaining, sodium borohydride and inidum chloride is 1:1 ~ 2:1.
6. the preparation method of according to claim 5 nanometer of indium ink, it is characterised in that the size of nanometer indium passes through alkyl Mercaptan and In3+ Molar ratio regulating and controlling;As alkyl hydrosulfide and In3+ Molar ratio be 0.125 ~ 5:When 1, nanometer indium Size between 10 ~ 30nm and as alkyl hydrosulfide consumption increases, the size of nanometer indium particle is gradually reduced.
7. the arbitrary nanometer indium ink of claim 1 ~ 4 is applied in flexible electronic device is prepared.
CN201611094498.8A 2016-12-01 2016-12-01 Nano indium ink for flexible electronic devices as well as preparation method and application of nano indium ink Pending CN106634215A (en)

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CN201611094498.8A CN106634215A (en) 2016-12-01 2016-12-01 Nano indium ink for flexible electronic devices as well as preparation method and application of nano indium ink
PCT/CN2016/109956 WO2018098853A1 (en) 2016-12-01 2016-12-14 Nano-indium ink for flexible electronic devices, preparation method therefor and application thereof

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CN111148363A (en) * 2019-12-31 2020-05-12 浙江理工大学 Method for preparing flexible circuit board by etching-writing nano conductive material on surface of polymer film
CN111592776A (en) * 2019-02-21 2020-08-28 尾池工业株式会社 Flaky indium particles and method for producing same, glittering pigment, and aqueous coating material, aqueous ink, and coating film

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CN111148363A (en) * 2019-12-31 2020-05-12 浙江理工大学 Method for preparing flexible circuit board by etching-writing nano conductive material on surface of polymer film
CN111148363B (en) * 2019-12-31 2021-06-11 浙江理工大学 Method for preparing flexible circuit board by etching-writing nano conductive material on surface of polymer film

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Application publication date: 20170510